Jean-Luc Autran

Publications

Article dans une revue (129)

SEU Cross-Section Predictions in 3nm FinFET using an Advanced Charge Transport Model Sayah El Hajji,Gilles Gasiot,Thomas Thery,Vincent Correas,Nicholas Pieperet al. IEEE Transactions on Nuclear Science, In press, ⟨10.1109/TNS.2026.3676492⟩ Article dans une revue hal-05572512v1
A Generic Neutron Analytical Spectrum and Soft-Error Rate for Nuclear Fusion Studies Jean-Luc Autran,Daniela Munteanu,Soilihi Moindjie Electronics, 2026, 15 (1), pp.11. ⟨10.3390/electronics15010011⟩ Article dans une revue hal-05434264v1
Comparative Analysis of Single-Particle Radiation Sensitivity of AlN, Diamond and β-Ga2O3 Semiconductors Exposed to Terrestrial Sea Level Neutrons Daniela Munteanu,Jean-Luc Autran Crystals, 2025, 15 (11), pp.975. ⟨10.3390/cryst15110975⟩ Article dans une revue hal-05367220v1
Theoretical Model of Transient Current in CMOS Inverter Under IR Laser Pulse Responsible of Bitflip in FDSOI Technology L. Pichon,L. Le Brizoual,H. Djeha,E. Ferrucho Alvarez,L. Claudepierreet al. IEEE Transactions on Electron Devices, 2025, 72 (4), pp.1919-1925. ⟨10.1109/TED.2025.3538002⟩ Article dans une revue hal-04948356v1
Fast and Accurate Deep Learning-based Poisson Solver for Single Event Simulations Sayah El Hajji,Gilles Gasiot,Jean-Luc Autran,Thomas Thery,Vincent Correaset al. IEEE Transactions on Nuclear Science, 2025, ⟨10.1109/TNS.2025.3555324⟩ Article dans une revue hal-05004294v1
Single-Particle Radiation Sensitivity of Ultrawide-Bandgap Semiconductors to Terrestrial Atmospheric Neutrons Daniela Munteanu,Jean-Luc Autran Crystals, 2025, 15 (2), pp.186. ⟨10.3390/cryst15020186⟩ Article dans une revue hal-04952341v1
Real-time SER measurements of CMOS bulk 40 nm and 65 nm SRAMS combined with neutron spectrometry at the JET Tokamak during its final D-T plasma operation Martin Dentan,Moindjie Soilihi,Matteo Cecchetto,Jean-Luc Autran,Rubén García Alíaet al. IEEE Transactions on Nuclear Science, 2025, 72 (4), pp.1486-1495. ⟨10.1109/TNS.2025.3540345⟩ Article dans une revue hal-04941391v1
Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons Jean-Luc Autran,Daniela Munteanu Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩ Article dans une revue hal-04420501v1
EUROfusion contributions to ITER nuclear operation X. Litaudon,U. Fantz,R. Villari,V. Toigo,M.-H. Aumeunieret al. Nuclear Fusion, 2024, 64 (11), pp.112006. ⟨10.1088/1741-4326/ad346e⟩ Article dans une revue hal-04687742v1
Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems Jean-Luc Autran,Daniela Munteanu IEEE Transactions on Nuclear Science, 2024, 71 (1), pp.31-66. ⟨10.1109/TNS.2023.3337288⟩ Article dans une revue hal-04333942v1
Interactions of Low-Energy Muons with Silicon: Numerical Simulation of Negative Muon Capture and Prospects for Soft Errors Jean-Luc Autran,Daniela Munteanu Journal of Nuclear Engineering, 2024, 5 (1), pp.91-110. ⟨10.3390/jne5010007⟩ Article dans une revue hal-04491638v1
Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak Soilihi Moindjie,Daniela Munteanu,Jean-Luc Autran,Martin Dentan,Philippe Moreauet al. IEEE Transactions on Nuclear Science, 2024, 71 (8), pp.1496-1502. ⟨10.1109/TNS.2023.3347673⟩ Article dans une revue hal-04390851v1
Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation Daniela Munteanu,Jean-Luc Autran Electronics, 2023, 12 (21), pp.4468. ⟨10.3390/electronics12214468⟩ Article dans une revue hal-04265835v1
Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs Soilihi Moindjie,Daniela Munteanu,Jean-Luc Autran,Victor Malherbe,Gilles Gasiotet al. Microelectronics Reliability, 2023, pp.115181. ⟨10.1016/j.microrel.2023.115181⟩ Article dans une revue hal-04194288v1
New insights into diffusion-collection modeling of radiation-induced charge in semiconductor devices Jean-Luc Autran,Daniela Munteanu Journal of Applied Physics, 2023, 134 (17), pp.175701. ⟨10.1063/5.0156698⟩ Article dans une revue hal-04241142v1
Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits Jean-Luc Autran,Daniela Munteanu IEEE Transactions on Nuclear Science, 2023, 70 (5), pp.782-791. ⟨10.1109/TNS.2023.3263106⟩ Article dans une revue hal-04059844v1
Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons Victor Malherbe,Francois Roy,Olivier Nier,Thomas Dalleau,Serge de Paoliet al. IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.534-541. ⟨10.1109/TNS.2022.3148925⟩ Article dans une revue hal-04138209v1
Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak during D-D Plasma Operation Jean-Luc Autran,Soilihi Moindjie,Daniela Munteanu,Martin Dentan,Philippe Moreauet al. IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.1-1. ⟨10.1109/TNS.2022.3149160⟩ Article dans une revue hal-03575419v1
Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons Daniela Munteanu,Soilihi Moindjie,Jean-Luc Autran Microelectronics Reliability, 2021, ⟨10.1016/j.microrel.2021.114256⟩ Article dans une revue hal-03358432v1
Electronics reliability assessment of future power fusion machines: neutron interaction analysis in bulk silicon Jean-Luc Autran,Daniela Munteanu Microelectronics Reliability, 2021, ⟨10.1016/j.microrel.2021.114223⟩ Article dans une revue hal-03358441v1
Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge S. Guagliardo,Frédéric Wrobel,Ygor Quadros de Aguiar,Jean-Luc Autran,Paul Lerouxet al. Microelectronics Reliability, 2021, 119, ⟨10.1016/j.microrel.2021.114087⟩ Article dans une revue hal-03187849v1
Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions Y.Q. Aguiar,Frédéric Wrobel,Jean-Luc Autran,Paul Leroux,Frédéric Saignéet al. Aerospace, 2020, 7 (2), pp.12. ⟨10.3390/aerospace7020012⟩ Article dans une revue hal-03129193v1
Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors Jean-Luc Autran,Daniela Munteanu IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1428-1435. ⟨10.1109/TNS.2020.2971611⟩ Article dans une revue hal-02473107v1
Impact of Complex-Logic Cell Layout on the Single-Event Transient Sensitivity Y. Aguiar,Frédéric Wrobel,Jean-Luc Autran,P. Leroux,Frédéric Saignéet al. IEEE Transactions on Nuclear Science, 2019, pp.1-1. ⟨10.1109/TNS.2019.2918077⟩ Article dans une revue hal-02136500v1
Modeling and Simulation of SEU in Bulk Si and Ge SRAM Soilihi Moindjie,Daniela Munteanu,Jean-Luc Autran Microelectronics Reliability, 2019, 100-101, pp.113390. ⟨10.1016/j.microrel.2019.06.082⟩ Article dans une revue hal-02263527v1
Terrestrial Neutron-Induced Single Events in GaN Daniela Munteanu,Jean-Luc Autran Microelectronics Reliability, 2019, 100-101, pp.113357. ⟨10.1016/j.microrel.2019.06.049⟩ Article dans une revue hal-02263526v1
A water tank muon spectrometer for the characterization of low energy atmospheric muons Daniela Munteanu,Soilihi Moindjie,Jean-Luc Autran Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019, 933, pp.12-17. ⟨10.1016/j.nima.2019.03.061⟩ Article dans une revue hal-02087354v1
A 225 μm2 Probe Single-Point Calibration Digital Temperature Sensor Using Body-Bias Adjustment in 28 nm FD-SOI CMOS Martin Cochet,Ben Keller,Sylvain Clerc,Fady Abouzeid,Andreia Cathelinet al. IEEE Solid-State Circuits Letters, 2018, 1 (1), pp.14-17. ⟨10.1109/LSSC.2018.2797427⟩ Article dans une revue hal-02111066v1
Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices Victor Malherbe,Gilles Gasiot,Thomas Thery,Jean-Luc Autran,Philippe Roche IEEE Transactions on Nuclear Science, 2018, 65 (1), pp.331-338. ⟨10.1109/TNS.2017.2774960⟩ Article dans une revue hal-02111080v1
Characterization of atmospheric muons at sea level using a cosmic ray telescope Jean-Luc Autran,Daniela Munteanu,Tarek Saad Saoud,Soilihi Moindjie Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2018, 903, pp.77-84. ⟨10.1016/j.nima.2018.06.038⟩ Article dans une revue hal-01846825v1
Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions Y.Q. Aguiar,Frédéric Wrobel,Jean-Luc Autran,P. Leroux,F. Saignéet al. Microelectronics Reliability, 2018, 88-90, pp.920-924. ⟨10.1016/j.microrel.2018.07.018⟩ Article dans une revue hal-02089778v1
A 2.7 pJ/cycle 16 MHz, 0.7 microW Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI Guénolé Lallement,Fady Abouzeid,Martin Cochet,Jean-Marc Daveau,Philippe Rocheet al. IEEE Journal of Solid-State Circuits, 2018, 53 (7), pp.2088-2100. ⟨10.1109/JSSC.2018.2821167⟩ Article dans une revue hal-02111060v1
On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study Victor Malherbe,Gilles Gasiot,Dimitri Soussan,Jean-Luc Autran,Philippe Roche IEEE Transactions on Nuclear Science, 2017, 64 (1, 1), pp.449-456. ⟨10.1109/TNS.2016.2634604⟩ Article dans une revue hal-01694468v1
Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation Daniela Munteanu,Jean-Luc Autran,S. Moindjie Microelectronics Reliability, 2017, 76 (SI), pp.719-724. ⟨10.1016/j.microrel.2017.07.040⟩ Article dans une revue hal-01693979v1
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs Soilihi Moindjie,Jean-Luc Autran,Daniela Munteanu,Gilles Gasiot,Philippe Roche Microelectronics Reliability, 2017, 76 (SI), pp.53-57. ⟨10.1016/j.microrel.2017.07.045⟩ Article dans une revue hal-01693984v1
Natural radiation events in CCD imagers at ground level T Saad Saoud,S Moindjie,Daniela Munteanu,Jean-Luc Autran Microelectronics Reliability, 2016, 64, pp.68 - 72. ⟨10.1016/j.microrel.2016.07.138⟩ Article dans une revue hal-01427855v1
Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Zahi Essa,B. Pelletier,P. Morin,P. Boulenc,A. Pakfaret al. Solid-State Electronics, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩ Article dans une revue istex hal-01435138v1
Real-time soft error rate measurements on bulk 40nm SRAM memories: a five-year dual-site experiment Jean-Luc Autran,Daniela Munteanu,S. Moindjie,T. Saad Saoud,G. Gasiotet al. Semiconductor Science and Technology, 2016, 31 (11), ⟨10.1088/0268-1242/31/11/114003⟩ Article dans une revue hal-01430070v1
Radiation and COTS at ground level Jean-Luc Autran,Daniela Munteanu Microelectronics Reliability, 2015, 55 (9-10), pp.2147-2153. ⟨10.1016/j.microrel.2015.06.030⟩ Article dans une revue hal-01430071v1
SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation Daniela Munteanu,Jean-Luc Autran Microelectronics Reliability, 2015, 55, pp.1501 - 1505. ⟨10.1016/j.microrel.2015.06.107⟩ Article dans une revue hal-01429427v1
3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs Daniela Munteanu,Jean-Luc Autran Microelectronics Reliability, 2015, 55 (9-10), pp.1522-1526. ⟨10.1016/j.microrel.2015.07.022⟩ Article dans une revue hal-01430073v1
ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure Jean-Luc Autran,Daniela Munteanu,S. Moindjie,T. Saad Saoud,S. Sauzeet al. Microelectronics Reliability, 2015, 55 (9-10), pp.1506-1511. ⟨10.1016/j.microrel.2015.06.101⟩ Article dans une revue hal-01430074v1
Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation P. Roche,G. Gasiot,Jean-Luc Autran,Daniela Munteanu,R. A. Reedet al. IEEE Transactions on Nuclear Science, 2014, 61 (3, 2), pp.1498-1500. ⟨10.1109/TNS.2014.2318778⟩ Article dans une revue hal-01430075v1
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits Jean-Luc Autran,M. Glorieux,Daniela Munteanu,S. Clerc,G. Gasiotet al. Microelectronics Reliability, 2014, 54 (9-10, SI), pp.2278-2283. ⟨10.1016/j.microrel.2014.07.088⟩ Article dans une revue hal-01430080v1
Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits M. Glorieux,Jean-Luc Autran,Daniela Munteanu,S. Clerc,G. Gasiotet al. IEEE Transactions on Nuclear Science, 2014, 61 (6, 1), pp.3527-3534. ⟨10.1109/TNS.2014.2362073⟩ Article dans une revue hal-01430079v1
90 nm SRAM Static and Dynamic Mode Real-Time Testing at Concordia Station in Antarctica Georgios Tsiligiannis,Luigi Dilillo,Alberto Bosio,Patrick Girard,Serge Pravossoudovitchet al. IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.3389-3394. ⟨10.1109/TNS.2014.2363120⟩ Article dans une revue hal-04056468v1
Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation Daniela Munteanu,Jean-Luc Autran Microelectronics Reliability, 2014, 54 (9-10, SI), pp.2284-2288. ⟨10.1016/j.microrel.2014.07.079⟩ Article dans une revue hal-01430078v1
Real-time soft-error rate measurements: A review Jean-Luc Autran,Daniela Munteanu,P. Roche,G. Gasiot Microelectronics Reliability, 2014, 54 (8), pp.1455-1476. ⟨10.1016/j.microrel.2014.02.031⟩ Article dans une revue hal-01430077v1
Behavioral modeling of SRIM tables for numerical simulation S. Martinie,T. Saad-Saoud,S. Moindjie,Daniela Munteanu,Jean-Luc Autran Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 322, pp.2-6. ⟨10.1016/j.nimb.2013.12.023⟩ Article dans une revue hal-01430076v1
Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation Tarek Saad Saoud,Soilihi Moindjie,Jean-Luc Autran,Daniela Munteanu,Frédéric Wrobelet al. IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.3380-3388. ⟨10.1109/TNS.2014.2365038⟩ Article dans une revue lirmm-01234455v1
An Analytical Model to Quantify Decay Chain Disequilibrium–Application to the Thorium Decay Chain A. Kaouache,Frédéric Wrobel,F. Saigné,Antoine Touboul,R. D. Schrimpfet al. IEEE Transactions on Nuclear Science, 2014, 61 (3), pp.1414 - 1419. ⟨10.1109/TNS.2014.2318074⟩ Article dans une revue hal-01635042v1
Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling Frédéric Wrobel,Jean-Roch Vaillé,Denis Pantel,Luigi Dilillo,Jean-Marc J.-M. Galliereet al. IEEE Transactions on Nuclear Science, 2013, 60 (4), pp.2386-2391. ⟨10.1109/TNS.2013.2257847⟩ Article dans une revue lirmm-01234425v1
A Silicon Diode-Based Detector for Investigations of Atmospheric Radiation Frédéric Wrobel,Jean-Roch Vaillé,Denis Pantel,Luigi Dilillo,Jean-Marc J.-M. Galliereet al. IEEE Transactions on Nuclear Science, 2013, 60 (5), pp.3603-3608. ⟨10.1109/TNS.2013.2264957⟩ Article dans une revue lirmm-01234419v1
Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment J. Dura,F. Triozon,S. Barraud,Daniela Munteanu,S. Martinieet al. Journal of Applied Physics, 2012, 111 (10), ⟨10.1063/1.4719081⟩ Article dans une revue hal-01430085v1
Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation Daniela Munteanu,Jean-Luc Autran IEEE Transactions on Nuclear Science, 2012, 59 (6, 2), pp.3249-3257. ⟨10.1109/TNS.2012.2221740⟩ Article dans une revue hal-01430090v1
Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs Jean-Luc Autran,S. Serre,S. Semikh,Daniela Munteanu,G. Gasiotet al. IEEE Transactions on Nuclear Science, 2012, 59 (6, 1), pp.2658-2665. ⟨10.1109/TNS.2012.2222438⟩ Article dans une revue hal-01430089v1
Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate S. Serre,S. Semikh,S. Uznanski,Jean-Luc Autran,Daniela Munteanuet al. IEEE Transactions on Nuclear Science, 2012, 59 (4, 1), pp.714-722. ⟨10.1109/TNS.2012.2189018⟩ Article dans une revue hal-01430091v1
3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation Daniela Munteanu,Jean-Luc Autran IEEE Transactions on Nuclear Science, 2012, 59 (4, 1), pp.773-780. ⟨10.1109/TNS.2012.2184139⟩ Article dans une revue hal-01430092v1
Embedded silicon detector to investigate the natural radiative environment Denis Pantel,Jean-Roch Vaillé,Frédéric Wrobel,Luigi Dilillo,Jean-Marc J.-M. Galliereet al. Journal of Instrumentation, 2012, 7 (5), pp.1-11. ⟨10.1088/1748-0221/7/05/P05007⟩ Article dans une revue lirmm-00805011v1
Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM Sébastien Martinie,Jean-Luc Autran,Sebastien Sauze,Daniela Munteanu,Slawosz Uznanskiet al. IEEE Transactions on Nuclear Science, 2012, 59 (4, 1), pp.1048-1053. ⟨10.1109/TNS.2012.2189246⟩ Article dans une revue hal-01430088v1
The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation S. Semikh,S. Serre,Jean-Luc Autran,Daniela Munteanu,S. Sauzeet al. IEEE Transactions on Nuclear Science, 2012, 59 (2), pp.303-313. ⟨10.1109/TNS.2011.2179945⟩ Article dans une revue hal-01430083v1
Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials Mathieu Moreau,Daniela Munteanu,Jean-Luc Autran Microelectronic Engineering, 2011, 88 (4), pp.366-369. ⟨10.1016/j.mee.2010.08.026⟩ Article dans une revue istex hal-01430097v1
Experimental Characterization of Atmospheric Radiation Environment with Stratospheric Balloon Frédéric Wrobel,Jean-Roch Vaillé,Denis Pantel,Luigi Dilillo,Paolo Rechet al. IEEE Transactions on Nuclear Science, 2011, 58 (3), pp.945-951. ⟨10.1109/TNS.2011.2136359⟩ Article dans une revue lirmm-00805045v1
Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal-Oxide-Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices Sébastien Martinie,Daniela Munteanu,Gilles Le Carval,Julien Dura,Marie-Anne Jaudet al. Japanese Journal of Applied Physics, 2011, 50 (1, 1), ⟨10.1143/JJAP.50.014103⟩ Article dans une revue hal-01430094v1
Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM S. Martinie,Jean-Luc Autran,S. Uznanski,P. Roche,G. Gasiotet al. IEEE Transactions on Nuclear Science, 2011, 58 (3, 2), pp.1086-1092. ⟨10.1109/TNS.2010.2102363⟩ Article dans une revue hal-01430099v1
Quantum Compact Model of Drain Current in Independent Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Daniela Munteanu,Jean-Luc Autran,Mathieu Moreau Japanese Journal of Applied Physics, 2011, 50 (2), ⟨10.1143/JJAP.50.024301⟩ Article dans une revue hal-01430093v1
Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level Sébastien Martinie,Jean-Luc Autran,Daniela Munteanu,Frédéric Wrobel,Michael Gedionet al. IEEE Transactions on Nuclear Science, 2011, 58 (6, 1), pp.2798-2803. ⟨10.1109/TNS.2011.2170851⟩ Article dans une revue hal-01430100v1
Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel Daniela Munteanu,Mathieu Moreau,Jean-Luc Autran Journal of Non-Crystalline Solids, 2011, 357 (8-9, SI), pp.1879-1883. ⟨10.1016/j.jnoncrysol.2010.12.046⟩ Article dans une revue istex hal-01430098v1
Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications Daniela Munteanu,Jean-Luc Autran Journal of Non-Crystalline Solids, 2011, 357 (8-9, SI), pp.1884-1887. ⟨10.1016/j.jnoncrysol.2010.11.112⟩ Article dans une revue istex hal-01430095v1
Endotherapia M. Geffard,L. de Bisschop,S. Duleu,O. Pouns,G. Ferranet al. Anti-inflammatory and anti-allergy agents in Medicinal Chemistry, 2010, 9 (3), pp.197-211 Article dans une revue hal-00584065v1
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level Jean-Luc Autran,Daniela Munteanu,P. Roche,G. Gasiot,S. Martinieet al. Microelectronics Reliability, 2010, 50 (9-11), pp.1822-1831. ⟨10.1016/j.microrel.2010.07.033⟩ Article dans une revue istex hal-01430102v1
Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-kappa Dielectric Stack Using the Non-equilibrium Green's Function Formalism Mathieu Moreau,Daniela Munteanu,Jean-Luc Autran Japanese Journal of Applied Physics, 2009, 48 (11), ⟨10.1143/JJAP.48.111409⟩ Article dans une revue hal-01430110v1
Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM Jean-Luc Autran,P. Roche,S. Sauze,G. Gasiot,Daniela Munteanuet al. IEEE Transactions on Nuclear Science, 2009, 56 (4, 2), pp.2258-2266. ⟨10.1109/TNS.2009.2012426⟩ Article dans une revue hal-01430112v1
Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study Daniela Munteanu,Jean-Luc Autran IEEE Transactions on Nuclear Science, 2009, 56 (4, 2), pp.2042-2049. ⟨10.1109/TNS.2009.2016564⟩ Article dans une revue hal-01430109v1
Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics X. Loussier,Daniela Munteanu,Jean-Luc Autran Journal of Non-Crystalline Solids, 2009, 355 (18-21), pp.1185-1188. ⟨10.1016/j.jnoncrysol.2009.02.011⟩ Article dans une revue istex hal-01430115v1
Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices Mathieu Moreau,Daniela Munteanu,Jean-Luc Autran,F. Bellenger,J. Mitardet al. Journal of Non-Crystalline Solids, 2009, 355 (18-21), pp.1171-1175. ⟨10.1016/j.jnoncrysol.2009.01.056⟩ Article dans une revue istex hal-01430114v1
Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology Vincent Barral,Thierry Poiroux,Jérôme Saint-Martin,Daniela Munteanu,Jean-Luc Autranet al. IEEE Transactions on Electron Devices, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩ Article dans une revue hal-01430106v1
Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation Sébastien Martinie,Daniela Munteanu,Gilles Le Carval,Jean-Luc Autran IEEE Transactions on Electron Devices, 2009, 56 (11, SI), pp.2692-2702. ⟨10.1109/TED.2009.2030540⟩ Article dans une revue hal-01430108v1
Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects Sebastien Martinie,Daniela Munteanu,Gilles Le Carval,Jean-Luc Autran Molecular Simulation, 2009, 35 (08), pp.631-637. ⟨10.1080/08927020902769836⟩ Article dans une revue hal-00515076v1
Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices Vincent Barral,Thierry Poiroux,Sylvain Barraud,François Andrieu,Olivier Faynotet al. IEEE Transactions on Nanotechnology, 2009, 8 (2), pp.167-173. ⟨10.1109/TNANO.2008.2010128⟩ Article dans une revue hal-01430103v1
Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study Daniela Munteanu,Jean-Luc Autran,Mathieu Moreau,M. Houssa Journal of Non-Crystalline Solids, 2009, 355 (18-21), pp.1180-1184. ⟨10.1016/j.jnoncrysol.2009.03.006⟩ Article dans une revue istex hal-01430113v1
Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility Vincent Barral,Thierry Poiroux,Daniela Munteanu,Jean-Luc Autran,Simon Deleonibus IEEE Transactions on Electron Devices, 2009, 56 (3), pp.420-430. ⟨10.1109/TED.2008.2011682⟩ Article dans une revue hal-01430104v1
Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices Mathieu Moreau,Daniela Munteanu,Jean-Luc Autran,Florence Bellenger,Jérome Mitardet al. MRS Online Proceedings Library, 2009, 1194, pp.1194-A02-02. ⟨10.1557/PROC-1194-A02-02⟩ Article dans une revue hal-01745840v1
3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates Daniela Munteanu,Jean-Luc Autran IEEE Transactions on Nuclear Science, 2009, 56 (4, 2), pp.2083-2090. ⟨10.1109/TNS.2009.2016343⟩ Article dans une revue hal-01430111v1
A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs Daniela Munteanu,Mathieu Moreau,Jean-Luc Autran Molecular Simulation, 2009, 35 (06), pp.491-497. ⟨10.1080/08927020902801548⟩ Article dans une revue hal-00515080v1
Impact of Geometrical and Electrical Parameters on Speed Performance Characteristics in Ultimate Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Xavier Loussier,Daniela Munteanu,Jean-Luc Autran,Olivier Tintori Japanese Journal of Applied Physics, 2008, 47 (5, 1), pp.3390-3395. ⟨10.1143/JJAP.47.3390⟩ Article dans une revue hal-01759434v1
Modeling and Simulation of Single-Event Effects in Digital Devices and ICs Daniela Munteanu,Jean-Luc Autran IEEE Transactions on Nuclear Science, 2008, 55 (4, 1), pp.1854-1878. ⟨10.1109/TNS.2008.2000957⟩ Article dans une revue hal-01759437v1
Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach Jean-Luc Autran,Daniela Munteanu Journal of computational and theoretical nanoscience, 2008, 5 (6), pp.1120-1127 Article dans une revue hal-01759436v1
Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Mathieu Moreau,Daniela Munteanu,Jean-Luc Autran Japanese Journal of Applied Physics, 2008, 47 (9), pp.7013 - 7018. ⟨10.1143/JJAP.47.7013⟩ Article dans une revue hal-01745615v1
Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits Sebastien Martinie,Gilles Le Carval,Daniela Munteanu,S. Soliveres,Jean-Luc Autran IEEE Transactions on Electron Devices, 2008, 55 (9), pp.2443-2453. ⟨10.1109/TED.2008.927656⟩ Article dans une revue hal-01759435v1
New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport Sebastien Martinie,Daniela Munteanu,Gilles Le Carval,Jean-Luc Autran IEEE Electron Device Letters, 2008, 29 (12), pp.1392-1394. ⟨10.1109/LED.2008.2007305⟩ Article dans une revue hal-01759431v1
Compact Modeling of Symmetrical Double-Gate MOSFETs Including Carrier Confinement and Short-Channel Effects Daniela Munteanu,Jean-Luc Autran,Xavier Loussier,Samuel Harrison,Robin Cerutti Molecular Simulation, 2007, 33 (07), pp.605-611. ⟨10.1080/08927020600930524⟩ Article dans une revue hal-00526208v1
3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs Daniela Munteanu,Jean-Luc Autran,V. Ferlet-Cavrois,P. Paillet,J. Baggioet al. IEEE Transactions on Nuclear Science, 2007, 54 (4, 2), pp.994-1001. ⟨10.1109/TNS.2007.892284⟩ Article dans une revue hal-01759444v1
Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors Vincent Barral,T. Poiroux,M. Vinet,J. Widiez,B. Previtaliet al. Solid-State Electronics, 2007, 51 (4), pp.537-542. ⟨10.1016/j.sse.2007.02.016⟩ Article dans une revue istex hal-01759440v1
Altitude SEE test European platform (ASTEP) and first results in CMOS 130 nm SRAM Jean-Luc Autran,Philippe Roche,Joseph Borel,Christophe Sudre,Karine Castellani-Coulieet al. IEEE Transactions on Nuclear Science, 2007, 54 (4, 2), pp.1002-1009. ⟨10.1109/TNS.2007.891398⟩ Article dans une revue hal-01759445v1
Full-band study of current across silicon nanowire transistors K. Nehari,N. Cavassilas,Fabienne Michelini,M. Bescond,Jean-Luc Autranet al. Applied Physics Letters, 2007, 90 (13), pp.132112:1-3. ⟨10.1063/1.2716351⟩ Article dans une revue hal-00392816v1
Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits X. Loussier,Daniela Munteanu,Jean-Luc Autran Journal of Non-Crystalline Solids, 2007, 353 (5-7), pp.639-644. ⟨10.1016/j.jnoncrysol.2006.11.016⟩ Article dans une revue istex hal-01759443v1
Investigation of quantum effects in ultra-thin body single- and double-gate devices submitted to heavy ion irradiation Daniela Munteanu,V. Ferlet-Cavrois,Jean-Luc Autran,P. Paillet,J. Baggioet al. IEEE Transactions on Nuclear Science, 2006, 53 (6, 1), pp.3363-3371. ⟨10.1109/TNS.2006.886206⟩ Article dans une revue hal-01759448v1
Investigation of 30 nm gate-all-around MOSFET sensitivity to heavy ions: A 3-D simulation study K. Castellani-Coulie,Daniela Munteanu,Jean-Luc Autran,V. Ferlet-Cavrois,P. Pailletet al. IEEE Transactions on Nuclear Science, 2006, 53 (4, 1), pp.1950-1958. ⟨10.1109/TNS.2006.880945⟩ Article dans une revue hal-01759447v1
Quantum short-channel compact modelling of drain-current in double-gate MOSFET Daniela Munteanu,Jean-Luc Autran,Xavier Loussier,Samuel Harrison,Robin Ceruttiet al. Solid-State Electronics, 2006, 50 (4), pp.680-686. ⟨10.1016/j.sse.2006.03.038⟩ Article dans une revue istex hal-01759446v1
Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation K. Castellani-Couli,Daniela Munteanu,Jean-Luc Autran,Veronique Ferlet-Cavrois,P. Pailletet al. IEEE Transactions on Nuclear Science, 2006, 53 (6), pp.3265-3270 Article dans une revue hal-02025180v1
Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study K. Nehari,N. Cavassilas,Jean-Luc Autran,M. Bescond,Daniela Munteanuet al. Solid-State Electronics, 2006, 50 (4), pp.716-721. ⟨10.1016/j.sse.2006.03.041⟩ Article dans une revue istex hal-02132134v1
Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-permittivitty gate dielectrics Daniela Munteanu,Jean-Luc Autran,S Harrison Journal of Non-Crystalline Solids, 2005, 351 (21-23), pp.1911-1918. ⟨10.1016/j.jnoncrysol.2005.04.037⟩ Article dans une revue istex hal-01759450v1
Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs Kc Castellani-Coulie,Daniela Munteanu,Jean-Luc Autran,V Ferlet-Cavrols,P Pailletet al. IEEE Transactions on Nuclear Science, 2005, 52 (6, 1), pp.2137-2143. ⟨10.1109/TNS.2005.860680⟩ Article dans une revue hal-01759456v1
Improvement of current-control induced by oxide notch in very short field-effect transistor Jean-Luc Autran Applied Physics Letters, 2005, Vol.87, pp.073509 Article dans une revue hal-00145185v1
Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET Daniela Munteanu,Jean-Luc Autran,S Harrison,K Nehari,O Tintoriet al. Molecular Simulation, 2005, 31 (12), pp.831-837. ⟨10.1080/08927020500313995⟩ Article dans une revue hal-01759460v1
Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-kappa dielectrics Jean-Luc Autran,Daniela Munteanu,M Houssa,K Castellani-Coulie,A Said Japanese Journal of Applied Physics, 2005, 44 (12), pp.8362-8366. ⟨10.1143/JJAP.44.8362⟩ Article dans une revue hal-01759458v1
SiO2, advanced dielectrics and related devices 5 - Proceedings of the 5th Franco-Italian Symposium on SiO2, Advanced Dielectrics and Related Devices - Preface A Vedda,Daniela Munteanu,M Ferrari,P Paillet,Jean-Luc Autran Journal of Non-Crystalline Solids, 2005, 351 (21-23), pp.VII. ⟨10.1016/j.jnocrysol.2005.04.067⟩ Article dans une revue hal-01759452v1
Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations K Castellani-Coulie,Daniela Munteanu,V Ferlet-Cavrois,Jean-Luc Autran IEEE Transactions on Nuclear Science, 2005, 52 (5, 2), pp.1474-1479. ⟨10.1109/TNS.2005.855810⟩ Article dans une revue hal-01759457v1
Improvement of current-control induced by oxide crenel in very short field-effect-transistor Nicolas Cavassilas,Marc Bescond,Jean-Luc Autran Applied Physics Letters, 2005, 87, pp.073509 Article dans une revue hal-00004546v1
A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-kappa gate dielectrics Jean-Luc Autran,Daniela Munteanu,M Bescond,M Houssa,A Said Journal of Non-Crystalline Solids, 2005, 351 (21-23), pp.1897-1901. ⟨10.1016/j.jnoncrysol.2005.04.034⟩ Article dans une revue istex hal-01759455v1
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs Jean-Luc Autran International Electron Device Meeting (IEDM) Tech. Digest, 2005, XX, pp.533 Article dans une revue hal-00146169v1
Compact Modeling of the Threshold Voltage in Silicon Nanowire MOSFET including 2D-Quantum Confinement Effects Jean-Luc Autran,Karim Nehari,Daniela Munteanu Molecular Simulation, 2005, 31 (12), pp.839-843. ⟨10.1080/08927020500314027⟩ Article dans une revue hal-00514965v1
An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors Jean-Luc Autran,Daniela Munteanu,O Tintori,E Decarre,Am Ionescu Molecular Simulation, 2005, 31 (2-3), pp.179-183. ⟨10.1080/0892702051233132⟩ Article dans une revue hal-01759451v1
Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism M Bescond,Jean-Luc Autran,Daniela Munteanu,M Lannoo Solid-State Electronics, 2004, 48 (4), pp.567-574. ⟨10.1016/j.sse.2003.09.025⟩ Article dans une revue istex hal-01759467v1
Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green's Function Formalism Marc Bescond,Jean-Luc Autran,Nicolas Cavassilas,Daniela Munteanu,Michel Lannoo Journal of Computational Electronics, 2004, 3 (3-4), pp.393-396. ⟨10.1007/s10825-004-7083-4⟩ Article dans une revue istex hal-01759465v1
SiO2 and Advanced Dielectrics 4 - Proceedings of the 4th Franco-Italian Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, September 16-18, 2002 - Preface A Vedda,Jean-Luc Autran,M Ferrari,Daniela Munteanu,M Passacantando Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.VII. ⟨10.1016/S0022-3093(03)00346-6⟩ Article dans une revue istex hal-01759472v1
Tunneling component of the ballistic current in ultimate double-gate devices Jean-Luc Autran,Daniela Munteanu Electrochemical and Solid-State Letters, 2003, 6 (7), pp.G95-G97. ⟨10.1149/1.1575591⟩ Article dans une revue hal-01759471v1
Stretch-out of high-permittivity MOS capacitance-voltage curves resulting from a lateral non-uniform oxide charge distribution Jean-Luc Autran,Daniela Munteanu,R Dinescu,M Houssa Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.219-224. ⟨10.1016/S0022-3093(03)00205-9⟩ Article dans une revue istex hal-01759476v1
Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides Daniela Munteanu,Jean-Luc Autran,E Decarre,R Dinescu Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.206-212. ⟨10.1016/S0022-3093(03)00203-5⟩ Article dans une revue istex hal-01759475v1
Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices Daniela Munteanu,Jean-Luc Autran Solid-State Electronics, 2003, 47 (7), pp.1219-1225. ⟨10.1016/S0038-1101(03)00039-X⟩ Article dans une revue istex hal-01759470v1
DYNAMOS: a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects P Masson,Jean-Luc Autran,Daniela Munteanu Solid-State Electronics, 2002, 46 (7), pp.1051-1059. ⟨10.1016/S0038-1101(02)00041-2⟩ Article dans une revue istex hal-01759527v1
Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx N. Pic,A. Glachant,S. Nitsche,J.Y. Hoarau,D. Goguenheimet al. Journal of Non-Crystalline Solids, 2001, 280, pp.69-77 Article dans une revue hal-00152161v1
Radiation Effects in Thin-Film Ferroelectric PZT for Non-Volatile Memory Applications in Microelectronics Jean-Luc Leray,Olivier Musseau,Philippe Paillet,Jean-Luc Autran,Frédéric Sodiet al. Journal de Physique III, 1997, 7 (6), pp.1227-1243. ⟨10.1051/jp3:1997185⟩ Article dans une revue istex jpa-00249644v1
Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using TaF5 source R.A.B. Devine,Laurent Vallier,Jean-Luc Autran,P. Paillet,J.L. Leray Applied Physics Letters, 1996, 68 ((13),), pp.1775 Article dans une revue hal-00284566v1
An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects Jean-Luc Leray,Philippe Paillet,Jean-Luc Autran Journal de Physique III, 1996, 6 (12), pp.1625-1646. ⟨10.1051/jp3:1996205⟩ Article dans une revue istex jpa-00249548v1
Etude par pompage de, charge des défauts induits à l'interface Si-SiO2 par rayonnements ionisants Jean-Luc Autran,Bernard Balland,Jean-Pierre Vallard,Daniel Babot Journal de Physique III, 1994, 4 (9), pp.1707-1721. ⟨10.1051/jp3:1994235⟩ Article dans une revue istex jpa-00249219v1
Instabilités dans les structures MOS 6H-SiC Christophe Raynaud,Jean-Luc Autran,Frédéric Seigneur,Claude Jaussaud,Thierry Billonet al. Journal de Physique III, 1994, 4 (5), pp.937-952. ⟨10.1051/jp3:1994176⟩ Article dans une revue istex jpa-00249157v1
Caractérisation des états d'interface dans des transistors MOS submicroniques par différentes techniques de pompage de charge Jean-Luc Autran,Frédéric Seigneur,Jacques Delmas,Carole Plossu,Bernard Balland Journal de Physique III, 1993, 3 (10), pp.1947-1961. ⟨10.1051/jp3:1993252⟩ Article dans une revue istex jpa-00249057v1

Ouvrages (3)

Single-Event Effects, from Space to Accelerator Environments Ygor Quadros De Aguiar,Frédéric Wrobel,Jean-Luc Autran,Rubén García Alía Springer International Publishing, 2025, ISBN978-3-031-71723-9. ⟨10.1007/978-3-031-71723-9⟩ Ouvrages hal-04980620v1
Advances in Semiconductor Physics, Devices and Quantum Dots - Nanotechnology and Future Challenges Jean-Luc Autran,Tingting Yin,Daniela Munteanu IntechOpen. , 2025, 978-0-85466-511-2. ⟨10.5772/intechopen.111359⟩ Ouvrages hal-05342391v1
Soft Errors : from particles to circuits Jean-Luc Autran,Daniela Munteanu Taylor & Francis/CRC Press. , 2015, 978-1-4665-9083-0 Ouvrages hal-02107670v1

Communication dans un congrès (86)

SEE and beam characterization with high-energy heavy ions at HIMAC Matteo Cecchetto,Kacper Bilko,Natalia Emriskova,Rubén García Alía,Satoshi Kodairaet al. 2025 RADECS Data Workshop, Oct 2025, Antwerp, Belgium. pp.1-8, ⟨10.1109/radecs66956.2025.11370336⟩ Communication dans un congrès hal-05538041v1
Real-Time SER measurements of CMOS Bulk 40 nm and 65 nm SRAMs combined with neutron spectrometry at the JET Tokamak during D-D and D-T plasma operation Martin Dentan,Soilihi Moindjie,Matteo Cecchetto,Jean-Luc Autran,Ruben Garcia Aliaet al. NSREC 2024 - 2024 IEEE Nuclear and Space Radiation Effects Conference, Jul 2024, Ottawa, Canada Communication dans un congrès hal-04613462v1
Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak Soilihi Moindjie,Daniela Munteanu,Jean-Luc Autran,Martin Dentan,Philippe Moreauet al. European Workshop on Radiation and its Effects on Components and Systems (RADECS 2023), Sep 2023, Toulouse, France Communication dans un congrès hal-04139407v1
Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs Soilihi Moindje,Daniela Munteanu,Jean-Luc Autran,Victor Malherbe,Gilles Gasiotet al. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France Communication dans un congrès hal-04177735v1
Preliminary Study of Electronics Reliability in ITER Neutron Environment Martin Dentan,Gianluca Borgese,Jean-Luc Autran,Daniela Munteanu,Soilihi Moindjieet al. European Workshop on Radiation and its Effects on Components and Systems (RADECS 2022), Oct 2022, Venise, Italy. ⟨10.1109/RADECS55911.2022.10412483⟩ Communication dans un congrès hal-03735989v1
Multi-scale, multi-physics modeling and simulation of single-event effects at device and circuit levels Jean-Luc Autran,Daniela Munteanu IEEE Nuclear and Space Radiation Effects Conference (NSREC 2022), Jul 2022, Provo, United States Communication dans un congrès hal-03796081v1
Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons Daniela Munteanu,Jean-Luc Autran European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Oct 2021, Bordeaux, France Communication dans un congrès hal-03358407v1
Real-Time Characterization of Neutron-induced SEUs in Fusion Experiment at WEST Tokamak during D-D Plasma Operation Soilihi Moindjie,Daniela Munteanu,M. Dentan,P. Moreau,F. P. Pellissieret al. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2021), Jul 2021, Ottawa, Canada Communication dans un congrès hal-03359535v1
Electronics reliability of future power fusion machines: numerical investigations at silicon level Jean-Luc Autran,Daniela Munteanu European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Oct 2021, Bordeaux, France Communication dans un congrès hal-03358419v1
Effect of Temperature on Single Event Latchup Sensitivity S. Guagliardo,Frédéric Wrobel,Ygor Quadros de Aguiar,Jean-Luc Autran,P. Lerouxet al. International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Apr 2020, Marrakech, Morocco. ⟨10.1109/dtis48698.2020.9081275⟩ Communication dans un congrès hal-03187841v1
Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors Jean-Luc Autran,Daniela Munteanu European Workshop on Radiation and its Effects on Components and Systems (RADECS 2019), Sep 2019, Biarritz, France Communication dans un congrès hal-02263545v1
Terrestrial Neutron-Induced Single Events in GaN Daniela Munteanu,Jean-Luc Autran 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France Communication dans un congrès hal-02263529v1
Modeling and Simulation of SEU in Bulk Si and Ge SRAM Soilihi Moindjie,Daniela Munteanu,Jean-Luc Autran 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France Communication dans un congrès hal-02263530v1
Impact of Complex-Logic Cell Layout on the Single-Event Transient Sensitivity Ygor Quadros de Aguiar,Frédéric Wrobel,Jean-Luc Autran,Paul Leroux,Frédéric Saignéet al. IEEE RADECS2018, Sep 2018, Goteborg, Sweden Communication dans un congrès hal-02086422v1
Effet des neutrons atmosphériques sur l'électronique SiC et GaN Jean-Luc Autran,Daniela Munteanu Journée du Groupement des Industries Françaises Aéronautiques et Spatiales, GIFAS 2018, Nov 2018, Paris, France Communication dans un congrès hal-02100118v1
Analysis of the charge sharing effect in the SET sensitivity of bulk 45nm standard cell layouts under heavy ions Ygor Quadros de Aguiar,Frédéric Wrobel,Jean-Luc Autran,Paul Leroux,Frédéric Saignéet al. 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark Communication dans un congrès hal-02086379v1
Q-Learning-based Adaptive Power Management for IoT System-an-Chips with Embedded Power States Y. Debizet,Guénolé Lallement,Fady Abouzeid,Philippe Roche,Jean-Luc Autran IEEE International Symposium on Circuits and Systems (ISCAS), May 2018, Florence, Italy Communication dans un congrès hal-02111130v1
Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs Soilihi Moindjie,Jean-Luc Autran,Daniela Munteanu,Gilles Gasiot,Philippe Roche 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France Communication dans un congrès hal-01787603v1
A 2.7pJ/cycle 16MHz SoC with 4.3nW Power-Off ARM Cortex-M0+ Core in 28nm FD-SOI Guénolé Lallement,Fady Abouzeid,Martin Cochet,Jean-Marc Daveau,Philippe Rocheet al. ESSCIRC 2017, Sep 2017, Leuven, Belgium Communication dans un congrès hal-01788172v1
A 0.40 pJ/cycle 981 μm2 Voltage Scalable Digital Frequency Generator for SoC Clocking Martin Cochet,Sylvain Clerc,Fady Abouzeid,Guénolé Lallement,Philippe Rocheet al. 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC 2017), Nov 2017, Seoul, South Korea Communication dans un congrès hal-01788358v1
Single Event Effects: the effects of Single particles on electronics. Space, aerospace and ground Jean-Luc Autran,Daniela Munteanu ANNIMA 2017, Jun 2017, Liège, Belgium Communication dans un congrès hal-01788355v1
Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation Daniela Munteanu,Jean-Luc Autran,Soilihi Moindjie 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France Communication dans un congrès hal-01787612v1
Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1D Case Applied to 28 nm FD-SOI Devices Victor Malherbe,Gilles Gasiot,Thomas Thery,Jean-Luc Autran,Philippe Roche NSREC 2017, Jul 2017, New Orleans, United States Communication dans un congrès hal-01788174v1
Natural radiation events in CCD imager at ground level T. Saad Saoud,S. Moindjie,Daniela Munteanu,Jean-Luc Autran 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2016, Halle, Germany Communication dans un congrès hal-01456909v1
A 28nm FD-SOI Standard Cell 0.6-1.2V Open-Loop Frequency Multiplier for Low Power SoC Clocking Martin Cochet,Sylvain Clerc,Mehdi Naceur,Pierre Schamberger,Damien Croainet al. 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, Unknown, Unknown Region. pp.1206-1209 Communication dans un congrès hal-01434957v1
Investigating the Single-Event-Transient Sensitivity of 65 nm Clock Trees with Heavy Ion Irradiation and Monte-Carlo Simulation Victor Malherbe,Gilles Gasiot,Sylvain Clerc,Fady Abouzeid,Jean-Luc Autranet al. 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016, Unknown, Unknown Region Communication dans un congrès hal-01435110v1
A Layout-Based Fault Injection Methodology for SER Prediction: Implementation and Correlation with 65nm Heavy Ion Experimental Results Benjamin Coeffic,Victor Malherbe,Jean-Marc Daveau,Gilles Gasiot,Lirida Navineret al. Proceedings of IEEE Nuclear and Space Radiation Effects Conference (NSREC), Jul 2016, New Orleans, United States Communication dans un congrès hal-02288532v1
Atmospheric radiation and COTS at ground level Jean-Luc Autran,Daniela Munteanu ESREF Conference, Oct 2015, Toulouse, France Communication dans un congrès hal-02101398v1
Investigation of Alpha Emissivity as a Function of Time Frédéric Wrobel,A. Kaouache,F. Saigné,Antoine Touboul,R. D. Schrimpfet al. 51th IEEE Nuclear Space and Radiation Effects Conference, 2015, Boston, United States Communication dans un congrès hal-01824780v1
ASTEP (2005-2015): Ten Years of Soft Error and Atmospheric Radiation Characterizations on the Plateau de Bure Jean-Luc Autran,Daniela Munteanu,Soilihi Moindjie,Tarek Saad Saoud,Sébastien Sauzeet al. ESREF Conference, Oct 2015, Toulouse, France Communication dans un congrès hal-02101357v1
3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET Daniela Munteanu,Jean-Luc Autran ESREF Conference, Oct 2015, Toulouse, France Communication dans un congrès hal-02100246v1
SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation Daniela Munteanu,Jean-Luc Autran ESREF Conference, Oct 2015, Toulouse, France Communication dans un congrès hal-02100273v1
Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm Jean-Luc Autran,Daniela Munteanu,Sébastien Sauze,Gilles Gasiot,Philippe Roche IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Jul 2014, Paris, France Communication dans un congrès hal-04373085v1
Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased junctions Embedded in Circuits Maximilien Glorieux,Jean-Luc Autran,Daniela Munteanu,Sylvain Clerc,Gilles Gasiotet al. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Jul 2014, Paris, France Communication dans un congrès hal-04373073v1
Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude Vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation Tarek Saad Saoud,Soilihi Moindjie,Jean-Luc Autran,Daniela Munteanu,Frédéric Wrobelet al. NSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France Communication dans un congrès lirmm-01237717v1
Particle Monte Carlo Modeling of Single-Event Transient Current and Charge Collection in Integrated Circuits Jean-Luc Autran,Maximilien Glorieux,Daniela Munteanu,Sylvain Clerc,Gilles Gasiotet al. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany Communication dans un congrès hal-04373126v1
Radiation Sensitivity of Junctionless Double-Gate 6T SRAM Cells Investigated by 3-D Numerical Simulation Daniela Munteanu,Jean-Luc Autran European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany Communication dans un congrès hal-04373115v1
Real-Time Testing of 90nm COTS SRAMs at Concordia Station in Antarctica Georgios Tsiligiannis,Luigi Dilillo,Alberto Bosio,Patrick Girard,Serge Pravossoudovitchet al. NSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France Communication dans un congrès lirmm-01237709v1
Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories G. Just,Jean-Luc Autran,S. Serre,Daniela Munteanu,S. Sauzeet al. 2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013, Monterey, United States. ⟨10.1109/IRPS.2013.6531992⟩ Communication dans un congrès hal-01430082v1
Understanding evolving risks of single event effects Daniela Munteanu,Jean-Luc Autran 14th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2013), Sep 2013, Oxford, United Kingdom Communication dans un congrès hal-04372514v1
Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue Philippe Roche,Jean-Luc Autran,Gilles Gasiot,Daniela Munteanu 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013, Washington, United States. ⟨10.1109/IEDM.2013.6724728⟩ Communication dans un congrès hal-01430081v1
A Silicon Diode Based Detector for the Natural Radiative Environment Measurement in Altitude Denis Pantel,Jean-Roch Vaillé,Frédéric Wrobel,Luigi Dilillo,Jean-Marc J.-M. Galliereet al. IEEE (Nuclear Plasma Society) Real Time Conference, Jun 2012, Berkeley, CA, United States. pp.1-6, ⟨10.1109/RTC.2012.6418104⟩ Communication dans un congrès lirmm-00805169v1
Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling Frédéric Wrobel,Jean-Roch Vaillé,Denis Pantel,Luigi Dilillo,Jean-Marc J.-M. Galliereet al. RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2012, Biarritz, France. pp.1-4 Communication dans un congrès lirmm-00805150v1
Electronic transport in GAA silicon nanowire MOSFETs: from Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient J. Dura,F. Triozon,Daniela Munteanu,S. Barraud,S. Martinieet al. 2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012, Madison, WI, United States Communication dans un congrès hal-01430084v1
Effects of Low Energy Muons on Electronics: Physical Insights and Geant4 Simulation Sébastien Serre,Serguei Semikh,Jean-Luc Autran,Daniela Munteanu,Gilles Gasiotet al. European Workshop on Radiation and its Effects on Components and Systems (RADECS 2012), Sep 2012, Biarritz (France), France Communication dans un congrès hal-04376254v1
Real-Time Soft-Error Testing of 40nm SRAMs Jean-Luc Autran,S. Serre,Daniela Munteanu,S. Martinie,S. Semikhet al. 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241814⟩ Communication dans un congrès hal-01430086v1
A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits Jean-Luc Autran,Daniela Munteanu,S. Serre,S. Sauze 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241843⟩ Communication dans un congrès hal-01430087v1
Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs Jean-Luc Autran,Sébastien Serre,Serguei Semikh,Daniela Munteanu,Gilles Gasiotet al. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2012), Jul 2012, Miami (FL), United States Communication dans un congrès hal-04376248v1
GEANT4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate Sébastien Serre,Serguei Semikh,Slawosz Uznanski,Jean-Luc Autran,Daniela Munteanuet al. 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.11-14, ⟨10.1109/RADECS.2011.6131292⟩ Communication dans un congrès hal-04391012v1
Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM Sébastien Martinie,Jean-Luc Autran,Sébastien Sauze,Daniela Munteanu,Slawosz Uznanskiet al. 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.524-527, ⟨10.1109/RADECS.2011.6131359⟩ Communication dans un congrès hal-04390971v1
Energy bands calculation in nanostructured meta-materials for solar cell applications Daniela Munteanu,Jean-Luc Autran Photovoltaic Technical Conference – Thin Film & Advanced Solutions 2011 (PV-TC 2011), May 2011, Aix-en-Provence, France Communication dans un congrès hal-04386570v1
3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs under Heavy-Ion Irradiation Daniela Munteanu,Jean-Luc Autran 12th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.73-76, ⟨10.1109/RADECS.2011.6131370⟩ Communication dans un congrès hal-04386582v1
Simulation study of short-channel effects and quantum confinement in Double-Gate FinFET devices with high-mobility materials Mathieu Moreau,Daniela Munteanu,Jean-Luc Autran European-Material Research Society (E-MRS) 2010 Spring Meeting, Jun 2010, Strasbourg, France Communication dans un congrès hal-04393626v1
Alpha-emitter induced soft-errors in CMOS 130nm SRAM: Real-time underground experiment and Monte-Carlo simulation Sébastien Martinie,Slawosz Uznanski,Jean-Luc Autran,Philippe Roche,Gilles Gasiotet al. International Conference on Integrated Circuit Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.220-223, ⟨10.1109/ICICDT.2010.5510250⟩ Communication dans un congrès hal-04393654v1
Alpha-Particle Induced Soft-Error Rate in CMOS 130nm SRAM Sebastien Martinie,Jean-Luc Autran,Slawosz Uznanski,Philippe Roche,Gilles Gasiotet al. 11th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2010), Sep 2010, Längenfeld, Austria Communication dans un congrès hal-04393659v1
Modeling of energy bands in quantum dot superlattices for solar cell applications Daniela Munteanu,Jean-Luc Autran 8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy Communication dans un congrès hal-04393615v1
Effects of gate stack parasitic charge on current-voltage characteristics of high-k/SiO2/Ge-channel Double-Gate MOSFETs Daniela Munteanu,Mathieu Moreau,Jean-Luc Autran 8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy Communication dans un congrès hal-04393620v1
A GPU/CUDA Implementation of the Collection-Diffusion Model to Compute SER of Large Area and Complex Circuits Jean-Luc Autran,Slawosz Uznanski,Sebastien Martinie,Philippe Roche,Gilles Gasiotet al. International Conference on Integrated Circuit Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.67-70, ⟨10.1109/ICICDT.2010.5510293⟩ Communication dans un congrès hal-04393640v1
Compact Modeling of Quasi-Ballistic Transport and Quantum Mechanical Confinement in Nanowire MOSFETs: Circuit Performances Analysis S. Martinie,E. Sarrazin,Daniela Munteanu,S. Barraud,G. Le Carvalet al. 2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, Sain-Diego,CA, United States. pp.139-142, ⟨10.1109/SISPAD.2009.5290229⟩ Communication dans un congrès hal-01430107v1
Combined Altitude and Underground Real-Time SER Characterization of CMOS Technologies on the ASTEP-LSM Platform Jean-Luc Autran,P. Roche,S. Sauze,G. Gasiot,Daniela Munteanuet al. 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, Austin, TX, United States. pp.113-120, ⟨10.1109/ICICDT.2009.5166277⟩ Communication dans un congrès hal-01430105v1
Electron Mean-Free-Path Experimental Extraction on Ultra-Thin and Ultra-Short Strained and Unstrained FDSOI n-MOSFETs Vincent Barral,T. Poiroux,S. Barraud,O. Bonno,F. Andrieuet al. 2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, Unknown, Unknown Region. pp.7-8, ⟨10.1109/SNW.2008.5418445⟩ Communication dans un congrès hal-01759427v1
Real-time neutron and alpha soft-error rate testing of CMOS 130nm SRAM: Altitude versus underground measurements Jean-Luc Autran,P. Roche,S. Sauze,G. Gasiot,Daniela Munteanuet al. 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Unknown, Unknown Region. pp.233+, ⟨10.1109/ICICDT.2008.4567284⟩ Communication dans un congrès hal-01759432v1
A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture S. Martinie,Daniela Munteanu,G. Le Carval,Jean-Luc Autran SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, Unknown, Unknown Region. pp.377+, ⟨10.1109/SISPAD.2008.4648316⟩ Communication dans un congrès hal-01759430v1
Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs Daniela Munteanu,M. Moreau,Jean-Luc Autran NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, Unknown, Unknown Region. pp.877+ Communication dans un congrès hal-01759433v1
3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates Daniela Munteanu,Jean-Luc Autran,Mathieu Moreau Conference on Radiation Effects on Components and Systems (RADECS), Sep 2008, Jyväskylä, Finland. pp.280-283, ⟨10.1109/RADECS.2008.5782727⟩ Communication dans un congrès hal-01841105v1
A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performance S. Martinie,G. Le Carval,Daniela Munteanu,M-A Jaud,Jean-Luc Autran 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Unknown, Unknown Region. pp.273+, ⟨10.1109/ICICDT.2008.4567294⟩ Communication dans un congrès hal-01759429v1
Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances Sébastien Martinie,Sylvain Vedraine,Daniela Munteanu,Gilles Le Carval,Vincent Barralet al. 38th European Solid State Device Research Conference (ESSDERC’2008), Sep 2008, Edinburg, United Kingdom Communication dans un congrès hal-01245391v1
Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack Vincent Barral,T. Poiroux,F. Andrieu,C. Buj-Dufournet,O. Faynotet al. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, Unknown, Unknown Region. pp.61+, ⟨10.1109/IEDM.2007.4418863⟩ Communication dans un congrès hal-01759439v1
Will strain be useful for 10 nm quasi-ballistic FDSOI devices? An experimental study Vincent Barral,T. Poiroux,F. Rochette,M. Vinet,S. Barraudet al. 2007 Symposium on VLSI Technology, Digest of Technical Papers, 2007, Kyoto, Japan. pp.128+, ⟨10.1109/VLSIT.2007.4339754⟩ Communication dans un congrès hal-01759441v1
Modeling and Simulation of Single-Event Effects in Digital Devices and ICs Daniela Munteanu,Jean-Luc Autran 10th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2007), Sep 2007, Deauville, France Communication dans un congrès hal-04388670v1
Nano-transistor MOS à ergot N. Cavassilas,Jean-Luc Autran,M. Bescond Proceedings Journées Nationales de Microélectronique et d'Optoélectronique (JNMO), 2006, Grenoble, France. pp.275 Communication dans un congrès hal-00148253v1
Modélisation et simulation du transport dans les fils quantiques de silicium : propriétés électroniques et applications aux transistors K. Nehari,N. Cavassilas,Fabienne Michelini,Jean-Luc Autran,M. Lannooet al. Proceedings Journées Nationales de Microélectronique et d'Optoélectronique (JNMO), 2006, Grenoble, France. pp.149 Communication dans un congrès hal-00148251v1
Quantum short-channel compact modeling of drain-current in double-gate MOSFET Daniela Munteanu,Jean-Luc Autran,X Loussier,S Harrison,R Ceruttiet al. PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, Unknown, Unknown Region. pp.137-140, ⟨10.1109/ESSDER.2005.1546604⟩ Communication dans un congrès hal-01759453v1
Influence of Simulation Parameters on the Bipolar Amplification in Fully-Depleted SOI Technologies under Heavy-Ion Irradiations K. Castellani-Coulié,M. Xia,Daniela Munteanu,Jean-Luc Autran,V. Ferlet-Cavroiset al. 2005 8th European Conference on Radiation and Its Effects on Components and Systems, Sep 2005, Cap d'Agde, France. pp.G2-1-G2-6 Communication dans un congrès hal-02025578v1
Investigation of 30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study K. Castellani-Coulié,Daniela Munteanu,Jean-Luc Autran,V. Ferlet-Cavrois,P. Pailletet al. 2005 8th European Conference on Radiation and Its Effects on Components and Systems, Sep 2005, Cap d'Agde, France. pp.G1-1-G1-8 Communication dans un congrès hal-02025580v1
An analytical subthreshold current model for ballistic double-gate MOSFETs Jean-Luc Autran,Daniela Munteanu,O Tintori,M Aubert,E Decarre NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, Unknown, Unknown Region. pp.171-174 Communication dans un congrès hal-01759463v1
Simulation studies of the parasitic structures involved in the SEU mechanisms in SRAMs B. Sagnes,Frédéric Saigné,J.-M. Palau,Jean-Luc Autran,M.-C. Calvet 5th European Workshop on Radiation and its Effects on Components and Systems, 2004, Madrid, Spain Communication dans un congrès hal-01806844v1
3D quantum modeling and simulation of multiple-gate nanowire MOSFETs M Bescond,K Nehari,Jean-Luc Autran,N Cavassilas,Daniela Munteanuet al. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.617-620, ⟨10.1109/IEDM.2004.1419237⟩ Communication dans un congrès hal-01759466v1
A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals D. Deleruyelle,C. Leroyer,B. de Salvo,G. Lecarval,M. Gelyet al. Silicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404 Communication dans un congrès hal-00485182v1
Poly-gate replacement through contact hole (PRETCH): A new method for high-K/metal gate and multi-oxide implementation on chip S Harrison,P Coronel,A Cros,R Cerutti,F Leverdet al. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.291-294, ⟨10.1109/IEDM.2004.1419136⟩ Communication dans un congrès hal-01759469v1
Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack Jean-Luc Autran,Daniela Munteanu,M Houssa,M Bescond,X Garroset al. INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, 2004, Unknown, Unknown Region. pp.177-188 Communication dans un congrès hal-01759464v1
Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates Jean-Luc Autran,Daniela Munteanu,O Tintori,S Harrison,E Decarreet al. NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, Unknown, Unknown Region. pp.163-166 Communication dans un congrès hal-01759462v1
Electrical characterization and modelling of high-performance SON DG MOSFETs S Harrison,Daniela Munteanu,Jean-Luc Autran,A Cros,R Ceruttiet al. ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, Unknown, Unknown Region. pp.373-376, ⟨10.1109/ESSDER.2004.1356567⟩ Communication dans un congrès hal-01759468v1
Highly Performant Double Gate MOSFET realized with SON process S Harrison,P Coronel,F Leverd,R Cerutti,R Pallaet al. 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, Unknown, Unknown Region. pp.449-452 Communication dans un congrès hal-01759525v1
Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier Double-Gate MOSFET's M Bescond,Jean-Luc Autran,Daniela Munteanu,N Cavassilas,M Lannoo ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, Unknown, Unknown Region. pp.395-398, ⟨10.1109/ESSDERC.2003.1256897⟩ Communication dans un congrès hal-01759526v1
Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystals D. Deleruyelle,D. Fraboulet,B. de Salvo,N. Buffet,D. Mariolleet al. Silicon Nano-electronics Workshop 2002, 2002, Honolulu, United States Communication dans un congrès hal-00484534v1

Chapitre d'ouvrage (19)

Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation Daniela Munteanu,Jean-Luc Autran Advances in Semiconductor Physics, Devices and Quantum Dots - Nanotechnology and Future Challenges, IntechOpen, 2025, 978-0-85466-511-2. ⟨10.5772/intechopen.1003991⟩ Chapitre d'ouvrage hal-04400965v1
Radiation Response of Group-IV and III-V Semiconductors Subjected to D-D and D-T Fusion Neutrons Jean-Luc Autran,Daniela Munteanu New Advances in Semiconductors, IntechOpen, 2022, ⟨10.5772/intechopen.103047⟩ Chapitre d'ouvrage hal-03695354v1
Interactions between Terrestrial Cosmic-Ray Neutrons and III-V Compound Semiconductors Daniela Munteanu,Jean-Luc Autran Modeling and Simulation in Engineering, 2020, 978-953-51-0012-6. ⟨10.5772/intechopen.92774⟩ Chapitre d'ouvrage hal-02998364v1
Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations Daniela Munteanu,Jean-Luc Autran Numerical Simulations in Engineering and Science, InTech, 2018, ⟨10.5772/intechopen.71528⟩ Chapitre d'ouvrage hal-02096696v1
Soft Errors in digital circuits subjected to natural radiation: characterization, modeling and simulation issues Daniela Munteanu,Jean-Luc Autran K. Weide-Zaage, M. Chrzanowska-Jeske. Semiconductor Devices in Harsh Conditions, CRC Press, pp.21-42, 2016, 9781498743808 Chapitre d'ouvrage hal-01433114v1
Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits Jean-Luc Autran,Daniela Munteanu,Soilihi Moindjie,Tarek Saad Saoud,Malherbe Victoret al. N. Sher Akbar, O. Anwar Beg. Modeling and Simulation in Engineering Sciences, INTECH, pp.115-137 2016, 978-953-51-2609-6. ⟨10.5772/64277⟩ Chapitre d'ouvrage hal-01433126v1
Natural Radiation Effects in CCD devices Tarek Saad Saoud,Soilihi Moindjie,Daniela Munteanu,Jean-Luc Autran M. Bagatin, S. Girardin. Ionizing Radiation Effects in Electronics: From Memories to Imagers, Taylor & Francis/CRC Press, 2015, 9781498722605 Chapitre d'ouvrage hal-02107684v1
Computational Modeling and Monte Carlo Simulation of Soft Errors in Flash Memories Jean-Luc Autran,Daniela Munteanu,Philippe Roche,Gilles Gasiot J. Awrejcewicz. Computational and Numerical Simulations, INTECH, pp.367-392, 2014, 978-953-51-1220-4. ⟨10.5772/57220⟩ Chapitre d'ouvrage hal-02119483v1
Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation Daniela Munteanu,Jean-Luc Autran J. Awrejcewicz. Computational and Numerical Simulations, INTECH, 2014, ⟨10.5772/57048⟩ Chapitre d'ouvrage hal-02119405v1
Soft-Error Rate of Advanced SRAM Memories: Modeling and Monte Carlo Simulation Jean-Luc Autran,Sergey Semikh,Daniela Munteanu,Sebastien Serre,Gilles Gasiotet al. M. Andriychuk. Numerical Simulations, INTECH, pp.309-336, 2012, 979-953-307-821-1. ⟨10.5772/50111⟩ Chapitre d'ouvrage hal-02120900v1
Nanowires: Promising Candidates for Electrostatic Control in Future Nanoelectronic Devices Julien Dura,Sebastien Martinie,Daniela Munteanu,Francois Triozon,Sylvain Barraudet al. H. Canbolat. Electrostatics, INTECH, pp.113-136, 2012, 978-953-51-0239-7. ⟨10.5772/36692⟩ Chapitre d'ouvrage hal-02121184v1
A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs Daniela Munteanu,Jean-Luc Autran X. Peng. Nanowires - Recent Advances, INTECH, pp.341-370, 2012, 978-953-51-0898-6. ⟨10.5772/52587⟩ Chapitre d'ouvrage hal-02120891v1
3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation Daniela Munteanu,Jean-Luc Autran L. Angermann. Numerical Simulations, Applications, Examples and Theory, INTECH, pp.67-88, 2011, 978-953-307-440-5. ⟨10.5772/13231⟩ Chapitre d'ouvrage hal-02121229v1
Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation Daniela Munteanu,Jean-Luc Autran,Sebastien Martinie A. Hashim. Nanowires - Implementations and Applications, INTECH, pp.201-222, 2011, 978-953-307-563-1. ⟨10.5772/16827⟩ Chapitre d'ouvrage hal-02121221v1
A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performances Sebastien Martinie,Daniela Munteanu,Gilles Le Carval,Jean-Luc Autran A. Amara, T. Ea, M. Belleville. Emerging technologies and Circuits, Springer, pp.37-51, 2010, 978-90-481-9378-3 Chapitre d'ouvrage hal-02121249v1
Real-Time Soft-Error Rate Characterization of Advanced SRAMs Jean-Luc Autran,Daniela Munteanu,Sebastien Sauze,Philippe Roche,Gilles Gasiot K. Iniewski. Radiation Effects in Semiconductors, CRC Press, pp.225-247, 2010, 978-1-4398-2694-2 Chapitre d'ouvrage hal-02121292v1
Compact modeling of Independent Double-Gate MOSFET: a physical approach Daniela Munteanu,Jean-Luc Autran A. Amara and O. Rozeau. Planar Double-Gate transistor: from technology to circuit, Springer, pp.27-54, 2009, 978-1-4020-9327-2 Chapitre d'ouvrage hal-02121344v1
Nouveaux matériaux et architectures innovantes au-delà du transistor MOS sur silicium massif Jean-Luc Autran,Daniela Munteanu J.L. Leray, J.C. Boudenot, J. Gautier. La Micro-Nanoélectronique. Enjeux et Mutations, CNRS Editions, pp.129, 2009, 978-2-271-06829-3 Chapitre d'ouvrage hal-02121322v1
Electrical characterization, modeling and simulation of high-κ based MOS devices Jean-Luc Autran,Daniela Munteanu,Michel Houssa M. Houssa. Fundamental and Technological Aspects of High-κ Gate Dielectrics, IOP Publishing, pp.251-289, 2004 Chapitre d'ouvrage hal-02121367v1

Autre publication scientifique (1)

Maryla Falk, de Lemberg à Chamonix, une vie (1906-1980) Marek Mejor,Jean-Luc Autran Revue de la Maison Alexandra David Néel (ISBN 9 782958 329952), 2025, pp.56-69 Autre publication scientifique hal-05224597v1