Jean-Luc Rouviere

Présentation

Publications

Article dans une revue (105)

Wurtzite vs zinc blende phase selection in GaN nanowires Corentin Guérin,Fabien Jourdan,Bérangère Moreau,Bruno Gayral,Jean-Luc Rouvièreet al. Journal of Applied Physics, 2025, 138 (3), pp.035304. ⟨10.1063/5.0279475⟩ Article dans une revue hal-05345102v1
Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography J. Cañas,A. Grenier,J L Rouviere,A. Harikumar,S. Ndiayeet al. Applied Physics Letters, 2025, 126 (11), pp.112101. ⟨10.1063/5.0242659⟩ Article dans une revue hal-04994349v1
Optical properties of basal plane stacking faults in AlN nanowires Corentin Guérin,Fabien Jourdan,Jean-Luc Rouvière,Bruno Gayral,Gwénolé Jacopinet al. Journal of Applied Physics, 2025, 137 (17), pp.174303. ⟨10.1063/5.0252320⟩ Article dans une revue hal-05345072v1
Polarity inversions within AlN films on sapphire exploiting silicon and oxygen diffusion during high temperature annealing Valeria Bonito Oliva,Sylvia Hagedorn,Eric Robin,Holm Kirmse,Jean-Luc Rouviereet al. Crystal Growth & Design, 2025, 25 (15), pp.5697-5708. ⟨10.1021/acs.cgd.4c01641⟩ Article dans une revue hal-05227803v1
Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy Anh My-Nhat Quach,Névine Rochat,Jean-Luc Rouvière,Jérôme Napierala,Bruno Daudin Nanotechnology, 2024, ⟨10.1088/1361-6528/ad7b43⟩ Article dans une revue hal-04704842v1
Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy Djordje Dosenovic,Samuel Dechamps,Kshipra Sharma,Jean-Luc Rouviere,Yiran Luet al. ACS Nano, 2024, 18 (34), pp.23354-23364. ⟨10.1021/acsnano.4c06561⟩ Article dans une revue hal-04688082v1
Correlative multi-spectroscopic and microscopic analyses for investigation of UV-C QDs bimodal emission Adeline Grenier,Jesus Canaz,Névine Rochat,Zineb Saghi,Jean-Luc Rouviereet al. BIO Web of Conferences, 2024, 129, pp.32002. ⟨10.1051/bioconf/202412932002⟩ Article dans une revue hal-04773075v1
Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate N Chaize,X Baudry,P-H Jouneau,E Gautier,J-L Rouvièreet al. Nanotechnology, 2024, 35 (50), pp.505602. ⟨10.1088/1361-6528/ad7ff4⟩ Article dans une revue hal-04746498v1
Effect of Extended Defects on AlGaN Quantum Dots for Electron-Pumped Ultraviolet Emitters Jesus Cañas,Nevine Rochat,Adeline Grenier,Audrey Jannaud,Zineb Saghiet al. ACS Nano, 2024, 18 (18), pp.11886-11897. ⟨10.1021/acsnano.4c01376⟩ Article dans une revue hal-04556808v1
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting Enrico Di Russo,Francesco Sgarbossa,Pierpaolo Ranieri,Gianluigi Maggioni,Samba Ndiayeet al. Applied Surface Science, 2023, 612, pp.155817. ⟨10.1016/j.apsusc.2022.155817⟩ Article dans une revue hal-03885778v1
Ultrathin GaN quantum wells in AlN nanowires for UV-C emission Rémy Vermeersch,Gwénolé Jacopin,Florian Castioni,Jean-Luc Rouvière,Alberto Garcia-Cristobalet al. Nanotechnology, 2023, 34, pp.275603. ⟨10.1088/1361-6528/accaeb⟩ Article dans une revue hal-04064951v1
Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers Djordje Dosenovic,Samuel Dechamps,Celine Vergnaud,Sergej Pasko,Simonas Krotkuset al. 2D Materials, 2023, 10 (4), pp.045024. ⟨10.1088/2053-1583/acf3f9⟩ Article dans une revue hal-04291553v1
Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence Alexandre Concordel,Névine Rochat,Anh My Nhat Quach,Jean-Luc Rouvière,Gwénolé Jacopinet al. Nanotechnology, 2023, 34 (49), pp.495702. ⟨10.1088/1361-6528/acf473⟩ Article dans une revue hal-04192006v1
Assessment of Active Dopants and p–n Junction Abruptness Using In Situ Biased 4D-STEM Bruno César da Silva,Zahra Sadre Momtaz,Eva Monroy,Hanako Okuno,Jean-Luc Rouviereet al. Nano Letters, 2022, 22 (23), pp.9544-9550. ⟨10.1021/acs.nanolett.2c03684⟩ Article dans une revue hal-03881003v1
The influence of illumination conditions in the measurement of built-in electric field at p–n junctions by 4D-STEM Bruno C da Silva,Zahra S Momtaz,Lucas Bruas,Jean-Luc Rouviére,Hanako Okunoet al. Applied Physics Letters, 2022, 121 (12), pp.123503. ⟨10.1063/5.0104861⟩ Article dans une revue hal-03832206v1
Practice of electron microscopy on nanoparticles sensitive to radiation damage: CsPbBr3 nanocrystals as a case study Tuan Duong,Kshipra Sharma,Fabio Agnese,Jean-Luc Rouviere,Hanako Okunoet al. Frontiers in Chemistry, 2022, 10, ⟨10.3389/fchem.2022.1058620⟩ Article dans une revue hal-04469338v1
Practice of electron microscopy on nanoparticles sensitive to radiation damage: CsPbBr3 nanocrystals as a case study Tuan Duong,Kshipra Sharma,Fabio Agnese,Jean-Luc Rouviere,Hanako Okunoet al. Frontiers in Chemistry, 2022, 10, pp.1058620. ⟨10.3389/fchem.2022.1058620⟩ Article dans une revue hal-03959400v1
The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes Bruno Daudin,Alexandra-Madalina Siladie,Marion Gruart,M. den Hertog,Catherine Bougerolet al. Nanotechnology, 2021, 32 (8), pp.085606. ⟨10.1088/1361-6528/abc780⟩ Article dans une revue hal-03429491v1
High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast Victor Boureau,M Staňo,Jean-Luc Rouviere,Jean-Christophe Toussaint,Olivier Fruchartet al. Journal of Physics D: Applied Physics, 2021, 54 (8), pp.085001. ⟨10.1088/1361-6463/abc77d⟩ Article dans une revue hal-02919930v1
Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy Bruno Daudin,Fabrice Donatini,Catherine Bougerol,Bruno Gayral,Edith Bellet-Amalricet al. Nanotechnology, 2021, 32 (2), pp.025601. ⟨10.1088/1361-6528/abb6a5⟩ Article dans une revue hal-02991749v1
Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure D. V. Beznasyuk,P. Stepanov,Jean-Luc Rouvière,F. Glas,M. Verheijenet al. Physical Review Materials, 2020, 4 (7), pp.074607. ⟨10.1103/PhysRevMaterials.4.074607⟩ Article dans une revue hal-02429832v1
Studying phase change memory devices by coupling scanning precession electron diffraction and energy dispersive X-ray analysis Loïc Henry,Nicolas Bernier,Martin Jacob,Gabriele Navarro,Laurent Clémentet al. Acta Materialia, 2020, 201, pp.72 - 78. ⟨10.1016/j.actamat.2020.09.033⟩ Article dans une revue hal-03493618v1
Improved measurement of electric fields by nanobeam precession electron diffraction L. Bruas,V. Boureau,A. Conlan,S. Martinie,Jean-Luc Rouviereet al. Journal of Applied Physics, 2020, 127 (20), pp.205703. ⟨10.1063/5.0006969⟩ Article dans une revue hal-03798997v1
Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy Benedikt Haas,Jean-Luc Rouviere,Victor Boureau,Remy Berthier,David Cooper Ultramicroscopy, 2019, 198, pp.58-72. ⟨10.1016/j.ultramic.2018.12.003⟩ Article dans une revue cea-02186458v1
In Situ Transmission Electron Microscopy Analysis of Copper–Germanium Nanowire Solid-State Reaction Khalil El Hajraoui,Eric Robin,Clemens Zeiner,Alois Lugstein,Stéphanie Kodjikianet al. Nano Letters, 2019, 19 (12), pp.8365-8371. ⟨10.1021/acs.nanolett.9b01797⟩ Article dans une revue hal-02544426v1
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy Alexandre Concordel,Gwenolé Jacopin,Bruno Gayral,Núria Garro,Ana Croset al. Applied Physics Letters, 2019, 114 (17), pp.172101. ⟨10.1063/1.5094627⟩ Article dans une revue hal-02127433v1
Incommensurate grain boundary in silicon and the silver-ratio sequence Frédéric Lançon,Nina Gunkelmann,Damien Caliste,Jean-Luc Rouvière Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 100 (11), ⟨10.1103/PhysRevB.100.115307⟩ Article dans une revue hal-02284426v1
Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application Andrea Kolb,Nicolas Bernier,Eric Robin,Anass Benayad,Jean-Luc Rouviereet al. ACS Applied Electronic Materials, 2019, 1 (5), pp.701-710. ⟨10.1021/acsaelm.9b00070⟩ Article dans une revue hal-02311359v1
In Situ Transmission Electron Microscopy Analysis of Aluminum–Germanium Nanowire Solid-State Reaction Khalil El Hajraoui,Minh Anh Luong,Eric Robin,Florian Brunbauer,Clemens Zeineret al. Nano Letters, 2019, 19 (5), pp.2897-2904. ⟨10.1021/acs.nanolett.8b05171⟩ Article dans une revue hal-02910070v1
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology S. Reboh,R. Coquand,S. Barraud,N. Loubet,N. Bernieret al. Applied Physics Letters, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩ Article dans une revue hal-02071864v1
Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain Honggyu Kim,Yifei Meng,Ji-Hwan Kwon,Jean-Luc Rouviere,Jian Min Zuo International Union of Crystallography journal, 2018, 5 (1), pp.67-72. ⟨10.1107/S2052252517016219⟩ Article dans une revue hal-02071865v1
Proposition of a model elucidating the AlN-on-Si (111) microstructure N. Mante,S. Rennesson,E. Frayssinet,L. Largeau,F. Semondet al. Journal of Applied Physics, 2018, 123 (21), pp.215701. ⟨10.1063/1.5017550⟩ Article dans une revue hal-02322400v1
Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques Joyce Roque,Georges Beainy,Névine Rochat,Nicolas Bernier,Sylvain Davidet al. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (4), pp.042901. ⟨10.1116/1.5033363⟩ Article dans une revue hal-01947865v1
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition T. Cerba,M. Martin,J. Moeyaert,S. David,J. Rouvièreet al. Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩ Article dans une revue hal-01954336v1
Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate J. Roque,B. Haas,S. David,N. Rochat,N. Bernieret al. Applied Physics Letters, 2018, 112 (20), pp.202104. ⟨10.1063/1.5027163⟩ Article dans une revue hal-01947882v1
Graphene as a Mechanically Active, Deformable Two-Dimensional Surfactant Sergio Vlaic,N. Rougemaille,Alexandre Artaud,Vincent Renard,Loic Huderet al. Journal of Physical Chemistry Letters, 2018, 9 (10), pp.2523-2531. ⟨10.1021/acs.jpclett.8b00586⟩ Article dans une revue hal-01781881v1
Growth and structural properties of step-graded, high Sn content GeSn layers on Ge J Aubin,J. Hartmann,A. Gassenq,J. Rouvière,Eric Robinet al. Semiconductor Science and Technology, 2017, 32 (9), pp.094006. ⟨10.1088/1361-6641/aa8084⟩ Article dans une revue hal-02045752v1
High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction David Cooper,Nicolas Bernier,Jean-Luc Rouviere,Jean-Luc Rouvière,Yun-Yu Wanget al. Applied Physics Letters, 2017, 110 (22), pp.223109 Article dans une revue hal-01998271v1
Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice Honggyu Kim,Yifei Meng,Jean-Luc Rouviere,Jian-Min Zuo Micron, 2017, 92, pp.6-12. ⟨10.1016/j.micron.2016.10.003⟩ Article dans une revue hal-02071868v1
High precision strain mapping of topological insulator HgTe/CdTe Benedikt Haas,Candice Thomas,Pierre-Henri Jouneau,Nicolas Bernier,Tristan Meunieret al. Applied Physics Letters, 2017, 110 (26), pp.263102. ⟨10.1063/1.4989822⟩ Article dans une revue hal-01980854v1
High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation Shan-Ting Zhang,Jean-Luc Rouvière,Vincent Consonni,Hervé Roussel,Laetitia Rapenneet al. Materials & Design, 2017, 132, pp.518-525. ⟨10.1016/j.matdes.2017.07.037⟩ Article dans une revue hal-01758851v1
InGaN nanowires with high InN molar fraction: growth, structural and optical properties Xin Zhang,Hugo Lourenco-Martins,Sophie Meuret,Mathieu Kociak,Benedikt Haaset al. Nanotechnology, 2016, 27 (19), pp.195704. ⟨10.1088/0957-4484/27/19/195704⟩ Article dans une revue cea-01851934v1
Growth mechanism of InGaN nanoumbrellas Xin Zhang,Benedikt Haas,Jean-Luc Rouviere,Eric Robin,Bruno Daudin Nanotechnology, 2016, 27 (45), pp.455603. ⟨10.1088/0957-4484/27/45/455603⟩ Article dans une revue cea-01851933v1
Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model Johan Pelloux-Prayer,Mikael Casse,Francois Triozon,Sylvain Barraud,Yann-Michel Niquetet al. Solid-State Electronics, 2016, 125, pp.175-181. ⟨10.1016/j.sse.2016.09.002⟩ Article dans une revue istex cea-01851576v1
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope David Cooper,Thibaud Denneulin,Nicolas Bernier,Armand Beche,Jean-Luc Rouviere Micron, 2016, 80, pp.145-165. ⟨10.1016/j.micron.2015.09.001⟩ Article dans une revue cea-01849438v1
Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction Yannick Martin,Jean-Luc Rouviere,J. M. Zuo,Vincent Favre-Nicolin Ultramicroscopy, 2016, 160, pp.64-73. ⟨10.1016/j.ulisamic.2014.12.009⟩ Article dans une revue cea-01851578v1
Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements B. Bonef,B. Haas,J-L. Rouvière,R. André,C. Bougerolet al. Journal of Microscopy, 2016, 262 (2), pp.178 - 182. ⟨10.1111/jmi.12340⟩ Article dans une revue hal-01390785v1
Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography Bastien Bonef,Lionel Gérard,Jean-Luc Rouvière,Adeline Grenier,Pierre-Henri Jouneauet al. Applied Physics Letters, 2015, 106 (5), pp.051904. ⟨10.1063/1.4907648⟩ Article dans une revue hal-01132475v1
The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires Thomas Auzelle,Benedikt Haas,Albert Minj,Catherine Bougerol,Jean-Luc Rouviereet al. Journal of Applied Physics, 2015, 117 (24), pp.245303. ⟨10.1063/1.4923024⟩ Article dans une revue hal-02071872v1
Solving difficult structures with electron diffraction J. M. Zuo,Jean-Luc Rouvière International Union of Crystallography journal, 2015, 2, pp.7-8. ⟨10.1107/s2052252514026797⟩ Article dans une revue hal-01616541v1
Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography Y. Y. Wang,David Cooper,Jean-Luc Rouvière,C. E. Murray,N. Bernieret al. Applied Physics Letters, 2015, 106 (4), pp.042104. ⟨10.1063/1.4906513⟩ Article dans une revue hal-01616542v1
Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction David Cooper,Nicolas Bernier,Jean-Luc Rouvière Nano Letters, 2015, 15 (8), pp.5289-5294. ⟨10.1021/acs.nanolett.5b01614⟩ Article dans une revue hal-01588268v1
Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries Thomas Auzelle,Benedikt Haas,Martien den Hertog,Jean-Luc Rouvière,Bruno Daudinet al. Applied Physics Letters, 2015, 107 (5), pp.051904. ⟨10.1063/1.4927826⟩ Article dans une revue hal-01586122v1
Lattice and strain analysis of atomic resolution Z-contrast images based on template matching Jian-Min Zuo,Amish Shah,Honggyu Kim,Yifei Meng,Wenpei Gaoet al. Ultramicroscopy, 2014, 136, pp.50-60. ⟨10.1016/j.ultramic.2013.07.018⟩ Article dans une revue istex hal-01972657v1
Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera Matthieu M.P. Vigouroux,V. Delaye,N. N. Bernier,R. Cipro,D. Lafondet al. Applied Physics Letters, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩ Article dans une revue hal-01103079v1
Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices Yifei Meng,Honggyu Kim,Jean-Luc Rouviere,Dieter Isheim,David Seidmanet al. Journal of Applied Physics, 2014, 116 (1), pp.013513. ⟨10.1063/1.4887078⟩ Article dans une revue hal-02071157v1
Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode Thibaud Denneulin,D. Cooper,J.L. Rouvière Micron, 2014, 62, pp.52-65. ⟨10.1016/j.micron.2014.02.017⟩ Article dans une revue istex hal-02071149v1
Measuring Lattice Parameters and Local Rotation using Convergent Beam Electron Diffraction: One Step Further Y. Martin,J.-M. Zuo,V. Favre-Nicolin,J.-L. Rouvière Microscopy and Microanalysis, 2013, 19 (S2), pp.710-711. ⟨10.1017/S1431927613005540⟩ Article dans une revue hal-02071123v1
Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure R. Galand,G. Brunetti,L. Arnaud,J.L. Rouviere,L. Clementet al. Microelectronic Engineering, 2013, 106, pp.168-171. ⟨10.1016/j.mee.2013.01.018⟩ Article dans une revue istex hal-00850231v1
Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering D. Jalabert,D. Pelloux-Gervais,A. Béché,J. Hartmann,P. Gergaudet al. Physica Status Solidi A (applications and materials science), 2012, 209 (2), pp.262-265 Article dans une revue hal-01965024v1
Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors Martien den Hertog,F. Gonzalez-Posada,Rudeesun Songmuang,Jean-Luc Rouviere,Thierry Fournieret al. Nano Letters, 2012, 12, pp.5691-5696. ⟨10.1021/nl302890f⟩ Article dans une revue hal-00863667v1
The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains Thibaud Denneulin,David Cooper,Jean-Michel Hartmann,Jean-Luc Rouvière Journal of Applied Physics, 2012, 112 (9), pp.094314. ⟨10.1063/1.4764045⟩ Article dans une revue hal-02145343v1
Hidden defects in silicon nanowires Martien den Hertog,Cyril Cayron,Pascal Gentile,Florian Dhalluin,Fabrice Oehleet al. Nanotechnology, 2011, 23, pp.025701. ⟨10.1088/0957-4484/23/2/025701⟩ Article dans une revue hal-00719753v1
Confirmation of the Domino-Cascade Model by LiFePO(4)/FePO(4) Precession Electron Diffraction G. Brunetti,D. Robert,P. Bayle-Guillemaud,J.L. Rouviere,E.F. Rauchet al. Chemistry of Materials, 2011, 23 (20), pp.4515-4524. ⟨10.1021/cm201783z⟩ Article dans une revue hal-00664175v1
Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis M.-I. Richard,J.-L. Rouvière,T.-S. Yoon,E. Holmström,Y.-H. Xieet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075314. ⟨10.1103/PhysRevB.84.075314⟩ Article dans une revue hal-01811420v1
The morphology of silicon nanowires grown in the presence of trimethylaluminium F. Oehler,P. Gentile,T. Baron,M. den Hertog,J.L. Rouviereet al. Nanotechnology, 2009, pp.20 (24): Art. No. 245602 JUN 17 2009 Article dans une revue hal-00455406v1
Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires B. Salem,F. Dhalluin,T. Baron,H. Jamgotchian,F. Beduet al. Materials Science and Engineering: B, 2009, 159-160, pp.83-86 Article dans une revue hal-00453724v1
Alternate dissociation of the screw dislocations in a (001) buried small-angle twist boundary in silicon R. Bonnet,M. Loubradou,S. Youssef,J.L. Rouvière,F. Fournel Philosophical Magazine, 2009, 89 (5), pp.413-434 Article dans une revue hal-00389424v1
Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires B. Salem,F. Dhalluin,T. Baron,H. Jamgotchian,F. Beduet al. Materials Science and Engineering, 2009, pp.B 159-160 83-86 Article dans une revue hal-00395832v1
Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins C. Cayron,M. den Hertog,L. Latu-Romain,C. Mouchet,C. Secouardet al. Journal of Applied Crystallography, 2009, 42, (2009), p1-11 Article dans une revue hal-00394399v1
The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films P. Noe,H. Okuno,J.-B. Jager,E Delamadeleine,O. Demichelet al. Nanotechnology, 2009, 20 (35), pp.355704. ⟨10.1088/0957-4484/20/35/355704⟩ Article dans une revue istex cea-01989752v1
Silicon nanowires grown in nanoporous alumina matrices on &lt;100&gt; oriented silicon substrates investigated by electron microscopy T. David,D. Buttard,M. den Hertog,P. Gentile,T. Baronet al. Superlatice and Microstructures, 2008, pp.44 (4-5) October-November (2008) 354-361 Article dans une revue hal-00394793v1
Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates K. Aissou,T. Baron,M. Kogelschatz,M. den Hertog,J.L. Rouviereet al. Chemistry of Materials, 2008, pp.20 6183-6188 Article dans une revue hal-00394788v1
A new architecture for self-organized silicon nanowire growth integrated on a (100) silicon substrate D. Buttard,T. David,P. Gentile,M. den Hertog,T. Baronet al. Physica Status Solidi A (applications and materials science), 2008, pp.Vol 205, Issue 7, July (2008) 1606-1614 Article dans une revue hal-00394787v1
Control of gold surface diffusion on Si nanowires Martien den Hertog,Jean-Luc Rouvière,Florian Dhalluin,Pierre Desré,Pascal Gentileet al. Nano Letters, 2008, 8, pp.1544-1550. ⟨10.1021/nl073356i⟩ Article dans une revue hal-00394786v1
Critical condition for growth of silicon nanowires Florian Dhalluin,Pierre J Desré,Martien den Hertog,Jean-Luc Rouviere,Pierre Ferretet al. Journal of Applied Physics, 2007, 102 (9), pp.094906. ⟨10.1063/1.2811935⟩ Article dans une revue hal-00394770v1
Crystal structure and band gap determination of HfO2 thin films Marie Cheynet,Simone Pokrant,Frans Tichelaar,Jean-Luc Rouvière Journal of Applied Physics, 2007, 101, pp.54101. ⟨10.1063/1.2697551⟩ Article dans une revue hal-00354604v1
Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers Florent Houdellier,Christian Roucau,L. Clement,J.L. Rouvière,Marie-José Casanove Ultramicroscopy, 2006, 106 (10), pp.951 - 959. ⟨10.1016/j.ultramic.2006.04.011⟩ Article dans une revue istex hal-01707838v1
Strain distribution in nitride quantum dot multilayers Virginie Chamard,T Schülli,M. Sztucki,T. H. Metzger,E. Sarigiannidouet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69, pp.125327. ⟨10.1103/PhysRevB.69.125327⟩ Article dans une revue hal-01253302v1
Growth and optical properties of GaN/AlN quantum wells C. Adelmann,E. Sarigiannidou,D. Jalabert,Y. Hori,J.-L. Rouvièreet al. Applied Physics Letters, 2003, 82 (23), pp.4154-4156. ⟨10.1063/1.1581386⟩ Article dans une revue hal-01975920v1
Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN C. Adelmann,J. Brault,J.-L. Rouvière,H. Mariette,Guido Mulaet al. Journal of Applied Physics, 2002, 91 (8), pp.5498-5500. ⟨10.1063/1.1458049⟩ Article dans une revue hal-04068285v1
Zero-dimensional excitons in CdTe/ZnTe nanostructures L. Marsal,L. Besombes,F. Tinjod,K. Kheng,A. Wasielaet al. Journal of Applied Physics, 2002, 91 (8), pp.4936-4943. ⟨10.1063/1.1436560⟩ Article dans une revue hal-04068287v1
Control of the morphology transition for the growth of cubic GaN/AlN nanostructures E. Martinez-Guerrero,F. Chabuel,B. Daudin,J. Rouvière,H. Mariette Applied Physics Letters, 2002, 81 (27), pp.5117-5119. ⟨10.1063/1.1527975⟩ Article dans une revue hal-04068237v1
Nanostructures formation and optical properties of II–VI semiconductor compounds H. Mariette,L. Marsal,L. Besombes,F. Tinjod,B. Gilleset al. Journal of Crystal Growth, 2002, 237-239, pp.227-233. ⟨10.1016/S0022-0248(01)01911-X⟩ Article dans une revue istex hal-04068299v1
Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates D. Sotta,V. Calvo,H. Ulmer-Tuffigo,N. Magnea,Emmanuel Hadjiet al. Materials Science and Engineering: B, 2001, 81 (1-3), pp.43-45 Article dans une revue cea-01996944v1
Self-Assembled GaN Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy Bruno Daudin,Guy Feuillet,H. Mariette,Guido Mula,Nikolaos Pelekanoset al. Japanese Journal of Applied Physics, 2001, 40 (3S), pp.1892. ⟨10.1143/JJAP.40.1892⟩ Article dans une revue hal-04069839v1
Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode B. Daudin,G. Feuillet,Guido Mula,H. Mariette,J.L. Rouvièreet al. Diamond and Related Materials, 2000, 9 (3-6), pp.506-511. ⟨10.1016/S0925-9635(99)00220-4⟩ Article dans une revue istex hal-04141176v1
Ultra thin silicon films directly bonded onto silicon wafers F. Fournel,H. Moriceau,N. Magnea,J. Eymery,J.L Rouvièreet al. Materials Science and Engineering: B, 2000, 73 (1-3), pp.42 - 46. ⟨10.1016/S0921-5107(99)00431-6⟩ Article dans une revue istex hal-01876883v1
Nanometric patterning with ultrathin twist bonded silicon wafers F. Fournel,H. Moriceau,N. Magnea,J. Eymery,B Buttardet al. Thin Solid Films, 2000, 380 (1-2), pp.10 - 14. ⟨10.1016/S0040-6090(00)01460-7⟩ Article dans une revue istex hal-01876895v1
Structural and optical properties of self-assembled GaN/AlN quantum dots Christophe Adelmann,Magali Arlery,Bruno Daudin,Guy Feuillet,Guy Fishmanet al. Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie, 2000, 1 (1), pp.61-69. ⟨10.1016/S1296-2147(00)00105-0⟩ Article dans une revue istex hal-04141213v1
Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy M. Arlery,J. Rouvière,F. Widmann,B. Daudin,G. Feuilletet al. Applied Physics Letters, 1999, 74 (22), pp.3287-3289. ⟨10.1063/1.123321⟩ Article dans une revue hal-04141479v1
Formation of II–VI nanostructures on vicinal surfaces H Mariette,M Charleux,J.M Hartmann,F Kany,D Martrouet al. Microelectronics Journal, 1999, 30 (4-5), pp.329-334. ⟨10.1016/S0026-2692(98)00128-1⟩ Article dans une revue istex hal-04141491v1
Nanoscale cluster formation on CdTe epilayers L Marsal,Y Samson,J.L Rouvière,H Mariette Journal of Crystal Growth, 1999, 201-202, pp.1226-1230. ⟨10.1016/S0022-0248(99)00028-7⟩ Article dans une revue istex hal-04141486v1
Structural and optical properties of CdTe/MnTe tilted superlattices grown on vicinal surfaces J.M. Hartmann,F. Kany,F. Chautain,J.L. Rouvière,A. Wasielaet al. Journal of Crystal Growth, 1998, 184-185, pp.279-282. ⟨10.1016/S0022-0248(98)80059-6⟩ Article dans une revue istex hal-04142624v1
Nanoscale surface clustering on CdTe epilayers L. Marsal,H. Mariette,Y. Samson,J. Rouvière,E. Picard Applied Physics Letters, 1998, 73 (20), pp.2974-2976. ⟨10.1063/1.122648⟩ Article dans une revue hal-04141493v1
Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study J. Hartmann,F. Kany,M. Charleux,Y. Samson,J. Rouvièreet al. Journal of Applied Physics, 1998, 84 (8), pp.4300-4308. ⟨10.1063/1.368648⟩ Article dans une revue hal-04141500v1
Comparative study of hexagonal and cubic GaN growth by RF-MBE G. Feuillet,F. Widmann,B. Daudin,J. Schuler,M. Arleryet al. Materials Science and Engineering: B, 1997, 50, pp.233-237 Article dans une revue hal-00546192v1
Atomic layer epitaxy of CdTe, MgTe and MnTe; growth of CdTe/MnTe tilted superlattices on vicinal surfaces J.M Hartmann,M Charleux,H Mariette,J.L Rouvière Applied Surface Science, 1997, 112, pp.142-147. ⟨10.1016/S0169-4332(96)00978-6⟩ Article dans une revue istex hal-04142838v1
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MOVPE growth and characterization of AlxGa1-xN Sandra Ruffenach,Olivier Briot,Jl Rouviere,Bernard Gil,Roger Aulombard Materials Science and Engineering: B, 1997, 50, pp.219-222 Article dans une revue hal-00546775v1
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Communication dans un congrès (28)

Selective Area Epitaxy of In-Plane HgTe Nanostructures on CdTe(001) Substrate Nicolas Chaize,Xavier Baudry,Jean-Luc Rouviere,Eric Gautier,Pierre-Henri Jouneauet al. Conférence JMC 2024, Oct 2024, Marseille, France Communication dans un congrès hal-05546424v1
Selective Area Epitaxy of In-Plane HgTe Nanostructures on CdTe(001) Substrate Nicolas Chaize,Xavier Baudry,Pierre-Henri Jouneau,Eric Gautier,Jean-Luc Rouviereet al. Conférence ICMBE 2024, Sep 2024, Matsue, Japan Communication dans un congrès hal-05546419v1
Towards direct imaging of defects in carbon nanotubes with 4DSTEM Antonin Louiset,Daniel Förster,Jean-Luc Rouvière,Vincent Jourdain,Christophe Bicharaet al. The 17th European Microscopy Congress (EMC 2024), Aug 2024, Copenhague, Denmark. pp.07014, ⟨10.1051/bioconf/202412907014⟩ Communication dans un congrès hal-05002818v1
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET Tiphaine Cerba,Mickaël Martin,Jeremy Moeyaert,Reynald Alcotte,Bassem Salemet al. 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan Communication dans un congrès hal-01954906v1
Apport du couplage broyage/ dissolution sur la dissolution d'oxydes réfractaires J. Hidalgo,T. Delahaye,G. Leturcq,Jean-Luc Rouviere Journée scientifique de Marcoule 2018 (JSM 2018), 2018, Bagnols sur cèze, France Communication dans un congrès cea-02338633v1
Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications Tiphaine Cerba,Mickaël Martin,Jeremy Moeyaert,Sylvain David,Jean-Luc Rouvièreet al. 2017 EMRS Fall Meeting, 2017, Warsaw, Poland Communication dans un congrès hal-01891383v1
Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications T. Cerba,M. Martin,J. Moeyaert,S. David,J.-L. Rouvièreet al. E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland Communication dans un congrès hal-01905730v1
Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition T. Cerba,M. Martin,J. Moeyaert,S. David,J.-L. Rouvièreet al. 17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France Communication dans un congrès hal-01891389v1
Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale J. Pelloux-Prayer,M. Cassé,S. Barraud,F. Triozon,Z. Zenget al. 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2016, Burlingame, France. pp.1-2 Communication dans un congrès hal-02143469v1
Investigating the Nucleation and Growth of Quaternary Cu2ZnSnS4Nanocrystals Fabio Agnese,Aurélie Lefrançois,Stéphanie Pouget,Louis Vaure,Ourania Makrygenniet al. European Microscopy Congress 2016, Aug 2016, Lyon, France. ⟨10.1002/9783527808465.EMC2016.5986⟩ Communication dans un congrès hal-03805183v1
Study of the piezoresistive properties of NMOS and PMOS Ω-gate SOI nanowire transistors: Scalability effects and high stress level J. Pelloux-Prayer,M. Cassé,S. Barraud,P. Nguyen,M. Koyamaet al. 2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, France. pp.20.5.1-20.5.4 Communication dans un congrès hal-02138872v1
Structural and Optical Properties of GaN Quantum Dots B. Daudin,N. Gogneau,C. Adelmann,E. Sarigiannidou,T. Andreevet al. GaN and Related Alloys, Dec 2003, Boston (USA), United States. pp.Y4.7, ⟨10.1557/PROC-798-Y4.7⟩ Communication dans un congrès hal-04341756v1
Formation Study of Organized Nanodots and Nanowires through Copolymer Diblock Technology C. Agraffeil,G. Gay,T. Baron,B. Salhi,M. Kogelschatzet al. A2 - Nanotechnology General Session 216th ECS Meeting, 2009, Vienne, Austria Communication dans un congrès hal-00461111v1
Study of Si Nanowires Growth by CVD-VLS and Physical Properties T. Baron,F. Dhalluin,B. Salem,B. Salhi,H. Abedet al. 216th ECS Meeting in Vienna, 2009, Vienne, Austria Communication dans un congrès hal-00461113v1
Investigation de films minces d'HfO2 par HRTEM et EELS (poster) M.C. Cheynet,S. Pokrant,F. Tichelaar,J.L. Rouvière Xème colloque de la Société Française des Microscopies, Jun 2007, Grenoble, France Communication dans un congrès hal-00214154v1
Small-diameter silicon nanowires growth by CVD Au catalyzed P. Gentile,T. David,D. Buttard,M. den Hertog,J.L. Rouviereet al. E-MRS, 2007, strasbourg, France Communication dans un congrès hal-00395911v1
Electron microscopy of gold catalyser silicon nanowires : defects in the wires and gold on the wires M. den Hertog,J.L. Rouviere,F. Dhalluin,P. Gentile,P. Ferretet al. GDR Nanofils, 2007, ECULLY, France Communication dans un congrès hal-00396921v1
Catalyst Assisted Silicon Nanowires Growth for Nanoelectronics F. Dhalluin,P. Desre,T. Baron,P. Ferret,B. Salemet al. E-MRS, 2007, strasbourg, France Communication dans un congrès hal-00395914v1
Small diameter silicon nanowires growth by CVD Au catalyzed P. Gentile,T. David,D. Buttard,M. den Hertog,J.L. Rouviereet al. 397 WE-Heraeus-Seminar, 2007, Bonn, Germany Communication dans un congrès hal-00396818v1
Croissance VLS de nanofils de Si de diamètre inférieur à 10 nm F. Dhalluin,M. den Hertog,P. Gentile,P. Ferret,J.L. Rouviere GDR Nanofils, 2007, Ecully, France Communication dans un congrès hal-00396923v1
Growth study of CVD Au calayzed Si nanowires and integration in an organized nanoporous alumina template P. Gentile,T. David,D. Buttard,M. den Hertog,J.L. Rouviereet al. MRS Fall Meeting Boston, Symposium Q, 2006, boston, United States Communication dans un congrès hal-00395869v1
Gold Catalyzed Growth of Silicon Nanowires by Chemical Vapor Deposition F. Dhalluin,T. Baron,P. Ferret,P. Gentile,J.L. Rouviere E-MRS Spring Meeting, 2006, nice, France Communication dans un congrès hal-00395858v1
Croissance catalytique de nanofils Si par VLS-CVD F. Dhalluin,M. den Hertog,J.L. Rouviére,P. Gentile,P. Ferretet al. GDR Nanofils, 2006, Lille, France Communication dans un congrès hal-00396915v1
Feasibility of Si Nanowire Integration: CVD Growth, Characterization and Comparison of Au vs PtSi Catalysts T. Baron,M. Gordon,F. Dhalluin,M. den Hertog,P. Ferretet al. 2006 MRS Fall Meeting, 2006, Boston, United States Communication dans un congrès hal-00390626v1
Evidence of Au on lateral surfaces on Si nanowires M. den Hertog,J.L. Rouviere,F. Dhalluin,P. Gentile,P. Ferretet al. GDR Nanofils, Jul 2006, lille, France Communication dans un congrès hal-00396914v1
Chemical profiles in AlGaN/GaN quantum wells: a CTEM, HRTEM and EFTEM comparison Jean-Luc Rouviere,Pascale Bayle-Guillemaud,G. Radtke,S. Groh,Olivier Briot Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, Mar 2001, OXFORD (ENGLAND), United Kingdom. pp.17-20 Communication dans un congrès hal-00546179v1
Evidence for atomic mixing induced in metallic bilayers by electronic energy deposition R. Leguay,M.A. Dunlop,F. Dunstetter,N. Lorenzelli,A. Braslauet al. Nanometric Phenomena Induced By Laser, Ion and Cluster Beams E-Mrs '96 Spring Meeting Symposium K, 1997, Strasbourg, France. pp.481-502 Communication dans un congrès in2p3-00000530v1
Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire Jl Rouviere,M. Arlery,R. Niebuhr,Kh Bachem,Olivier Briot European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.161-166 Communication dans un congrès hal-00546205v1

Ouvrages (1)

European Microscopy Congress 2016: Proceedings Benedikt Haas,Robert Mcleod,Thomas Auzelle,Bruno Daudin,J. Eymeryet al. Wiley-VCH Verlag GmbH & Co. KGaA, 2016 Ouvrages hal-02143427v1

Autre publication scientifique (1)

Diffraction Based Strain Mapping in Electron Microscopy (TEM and SEM) Benedikt Haas,Johannes Müller,Jean-Luc Rouviere,Christoph Koch 2019 Autre publication scientifique hal-04599300v1

Pré-publication, Document de travail (1)

Off-Axis Electron Holography for Field Mapping in the semiconductor Industry David N. Cooper,Béché Armand,Martien den Hertog,Aurélien Masseboeuf,Jean-Luc Rouviereet al. 2010 Pré-publication, Document de travail hal-00508681v1