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Jean-Marc Routoure
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Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTsIEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩
Article dans une revue
hal-01560627v1
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Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTsEMRS Fall Meeting, Sep 2016, Varsovie, Poland
Poster de conférence
hal-01641574v1
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