|
Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask
Renaud Puybaret
,
Gilles Patriarche
,
Matthew B. Jordan
,
Suresh Sundaram
,
Youssef El Gmili
Article dans une revue
hal-01220089v1
|
|
Role of V-pits in the performance improvement of InGaN solar cells
Muhammad Arif
,
Jean-Paul Salvestrini
,
Jérémy Streque
,
Matthew B. Jordan
,
Youssef El Gmili
Article dans une revue
hal-02385085v1
|
|
Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates
Suresh Sundaram
,
Youssef El Gmili
,
Renaud Puybaret
,
Li X.
,
P.L. Bonanno
Article dans une revue
hal-01203766v1
|
|
Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template
Suresh Sundaram
,
Renaud Puybaret
,
Xin Li
,
Youssef El Gmili
,
Konstantinos Pantzas
Article dans une revue
hal-01077688v1
|
|
Characteristics of the surface microstructures in thick InGaN layers on GaN
Y. El Gmili
,
G. Orsal
,
K. Pantzas
,
A. Ahaitouf
,
T. Moudakir
Article dans une revue
hal-00815384v1
|
|
Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study
Y. El Gmili
,
G. Orsal
,
K. Pantzas
,
T. Moudakir
,
S. Sundaran
Article dans une revue
hal-00845424v1
|