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Jean Paul Salvestrini

6
Documents

Présentation

***under construction***
***under construction***

Publications

36086
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Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Renaud Puybaret , Gilles Patriarche , Matthew B. Jordan , Suresh Sundaram , Youssef El Gmili
Applied Physics Letters, 2016, 108 (10), pp.103105. ⟨10.1063/1.4943205⟩
Article dans une revue hal-01220089v1
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Role of V-pits in the performance improvement of InGaN solar cells

Muhammad Arif , Jean-Paul Salvestrini , Jérémy Streque , Matthew B. Jordan , Youssef El Gmili
Applied Physics Letters, 2016, 109 (13), pp.133507. ⟨10.1063/1.4963817⟩
Article dans une revue hal-02385085v1
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Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Suresh Sundaram , Youssef El Gmili , Renaud Puybaret , Li X. , P.L. Bonanno
Applied Physics Letters, 2015, 107 (113105), ⟨10.1063/1.4931132⟩
Article dans une revue hal-01203766v1
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Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Suresh Sundaram , Renaud Puybaret , Xin Li , Youssef El Gmili , Konstantinos Pantzas
Journal of Applied Physics, 2014, 116 (16), pp.163105-163105-6. ⟨10.1063/1.4900531⟩
Article dans une revue hal-01077688v1

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili , G. Orsal , K. Pantzas , A. Ahaitouf , T. Moudakir
Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩
Article dans une revue hal-00815384v1

Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study

Y. El Gmili , G. Orsal , K. Pantzas , T. Moudakir , S. Sundaran
Acta Materialia, 2013, 61, pp.6587-6596. ⟨10.1016/j.actamat.2013.07.041⟩
Article dans une revue hal-00845424v1