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***under construction***
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MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronicsAPL Materials, 2021, 9 (6), pp.061101. ⟨10.1063/5.0049306⟩
Article dans une revue
hal-03350328v1
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Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substratesOptical Materials Express, 2017, 7 (2), ⟨10.1364/OME.7.000376⟩
Article dans une revue
hal-01830918v1
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