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Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMSApplied Physics Letters, 2024, 124 (10), pp.104102. ⟨10.1063/5.0191772⟩
Article dans une revue
hal-04495378v1
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Photoinduced doping in hexagonal boron nitrideApplied Physics Letters, 2023, 122 (26), pp.263503. ⟨10.1063/5.0146797⟩
Article dans une revue
hal-04142563v1
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Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and TransferACS Applied Electronic Materials, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩
Article dans une revue
hal-03350389v1
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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substratesScientific Reports, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩
Article dans une revue
hal-03120983v1
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