Jean Paul Salvestrini

Présentation

under construction

Publications

Article dans une revue (114)

On the importance of Ni–Au–Ga interdiffusion in the formation of a Ni–Au/p-GaN ohmic contact Jules Duraz,Hassen Souissi,Maksym Gromovyi,David Troadec,Téo Baptisteet al. Journal of Applied Physics, 2026, 139 (2), pp.025102. ⟨10.1063/5.0295857⟩ Article dans une revue hal-05473565v2
III-Nitride MEMS drum resonators on flexible metal substrates A. Kassem,R. Gujrati,D. Bourrier,C. Ayela,Fabrice Mathieuet al. Microsystems & Nanoengineering, 2025, 11 (1), pp.197. ⟨10.1038/s41378-025-00995-3⟩ Article dans une revue hal-05391891v1
III-Nitride MEMS drum resonators on flexible metal substrates A. Kassem,R. Gujrati,D. Bourrier,C. Ayela,F. Mathieuet al. Microsystems & Nanoengineering, 2025, 11 (1), pp.197. ⟨10.1038/s41378-025-00995-3⟩ Article dans une revue hal-05404769v1
Nano-Structured InGaN Photoanode for Hydrogen Production Using Photoelectrochemical Water Splitting: A Simulation Study Fatima Tijent,Rajat Gujrati,Suresh Sundaram,Mustapha Faqir,Paul Vosset al. Journal of The Electrochemical Society, 2025, 172 (2), pp.026503. ⟨10.1149/1945-7111/adb13f⟩ Article dans une revue hal-05404857v1
Strong spin-orbital coupling-induced unusual magnetic and magnetocaloric features in YbVO 3 single crystals Mohamed Balli,Sohail Ait Jmal,Oumayma Chdil,Sabeur Mansouri,Patrick Fournieret al. ACS Applied Energy Materials, 2025, 8 (16), pp.12415-12427. ⟨10.1021/acsaem.5c02110⟩ Article dans une revue hal-05404788v1
Layer transferred UV emitting hBN/AlGaN heterostructures Andre Perepeliuc,Ali Kassem,Rajat Gujrati,Phuong Vuong,Vishnu Ottapilakkalet al. Applied Physics Letters, 2025, 126 (10), ⟨10.1063/5.0257889⟩ Article dans une revue hal-05404810v1
Controlled nano-roughening of the GaN surface by post-growth thermal annealing W. Malek,M. Bouzidi,N. Chaaben,W. Belgacem,Abdullah Alshammariet al. Applied Surface Science, 2024, 655, pp.159668. ⟨10.1016/j.apsusc.2024.159668⟩ Article dans une revue hal-04461405v1
Hydrogen Confinement in Hexagonal Boron Nitride Bubbles Using UV Laser Illumination Fatima Z Tijent,Montassar B Bouzourâa,Vishnu Ottapilakkal,Andre Perepeliuc,Rajat Gujratiet al. Small, 2024, pp.2406794. ⟨10.1002/smll.202406794⟩ Article dans une revue hal-04739820v2
Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study Fatima Tijent,Mustapha Faqir,Paul Voss,Jean-Paul Salvestrini,Abdallah Ougazzaden Materials Science and Engineering: B, 2024, 301, pp.117185. ⟨10.1016/j.mseb.2024.117185⟩ Article dans une revue hal-04461410v1
Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS Rajat Gujrati,Ali Kassem,Cédric Ayela,Fabrice Mathieu,Liviu Nicuet al. Applied Physics Letters, 2024, 124 (10), pp.104102. ⟨10.1063/5.0191772⟩ Article dans une revue hal-04495378v1
N-Face Semi-Bulk Absorber Boosts Conversion Efficiency of InGaN Solar Cell Rabeb Belghouthi,Amani Rached,Michel Aillerie,Ramdani Mohammed,Rajat Gujratiet al. Journal of Electronic Materials, 2023, Journal of Electronic Materials, 52 (11), pp.7566-7575. ⟨10.1007/s11664-023-10662-w⟩ Article dans une revue hal-04356633v1
Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates Phuong Vuong,Tarik Moudakir,Rajat Gujrati,Ashutosh Srivastava,Vishnu Ottapilakkalet al. Advanced Materials Technologies, 2023, 8 (18), ⟨10.1002/admt.202300600⟩ Article dans une revue hal-04460173v1
Design and fabrication process flow for high-efficiency and flexible InGaN solar cells Rajat Gujrati,Soufiane Karrakchou,Lucas Oliverio,Suresh Sundaram,Paul Vosset al. Micro and Nanostructures, 2023, 176, pp.207538. ⟨10.1016/j.micrna.2023.207538⟩ Article dans une revue hal-03997009v1
Photoinduced doping in hexagonal boron nitride A. Perepeliuc,R. Gujrati,A. Srivastava,P. Vuong,V. Ottapilakkalet al. Applied Physics Letters, 2023, 122 (26), pp.263503. ⟨10.1063/5.0146797⟩ Article dans une revue hal-04142563v1
Thermal Stability of Thin hexagonal Boron Nitride grown by MOVPE on Epigraphene Vishnu Ottapilakkal,Abhishek Juyal,Suresh Sundaram,A. Mballo,P. Vuonget al. Journal of Crystal Growth, 2023, 603, pp.127030. ⟨10.1016/j.jcrysgro.2022.127030⟩ Article dans une revue hal-03818508v1
Biosensors for the Rapid Detection of Cardiovascular Biomarkers of Vital Interest: Needs, Analysis and Perspectives Laure Abensur Vuillaume,Justine Frija-Masson,Meriem Hadjiat,Thomas Riquier,Marie-Pia D’orthoet al. Journal of Personalized Medicine, 2022, 12, ⟨10.3390/jpm12121942⟩ Article dans une revue hal-04266801v1
Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices Phuong Vuong,Suresh Sundaram,Vishnu Ottapilakkal,Gilles Patriarche,Ludovic Largeauet al. ACS Applied Nano Materials, 2022, 5 (1), pp.791-800. ⟨10.1021/acsanm.1c03481⟩ Article dans une revue hal-04460183v1
A cost-effective technology to improve power performance of nanoribbons GaN HEMTs Ali Soltani,Brahim Benbakhti,J.-C. Gerbedoen,Abdelkrim Khediri,Maher, Hassanet al. Applied Physics Letters, 2022, 120 (4), pp.042102. ⟨10.1063/5.0080240⟩ Article dans une revue hal-03544158v1
Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures Mohamed Bouzidi,Wafa Malek,Noureddine Chaaben,Abdullah Alshammari,Ziaul Raza Khanet al. Optical Engineering, 2022, 61 (10), pp.105106. ⟨10.1117/1.OE.61.10.105106⟩ Article dans une revue hal-05119343v1
MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics Suresh Sundaram,Phuong Vuong,Adama Mballo,Taha Ayari,Soufiane Karrakchouet al. APL Materials, 2021, 9 (6), pp.061101. ⟨10.1063/5.0049306⟩ Article dans une revue hal-03350328v1
Optical characterization by photoreflectance of GaN after its partial thermal decomposition Wafa Malek,Abdelkarim Kahouli,Mohamed Bouzidi,Noureddine Chaaben,Abdullah Alshammariet al. Optik, 2021, 248, pp.168070. ⟨10.1016/j.ijleo.2021.168070⟩ Article dans une revue hal-03445791v1
Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions Adama Mballo,Ashutosh Srivastava,Suresh Sundaram,Phuong Vuong,Soufiane Karrakchouet al. Nanomaterials, 2021, 11 (1), pp.211. ⟨10.3390/nano11010211⟩ Article dans une revue hal-03117696v1
Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer Soufiane Karrakchou,Suresh Sundaram,Rajat Gujrati,Phuong Vuong,Adama Mballoet al. ACS Applied Electronic Materials, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩ Article dans une revue hal-03350389v1
Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE Imen Daldoul,Safa Othmani,Adama Mballo,Phuong Vuong,Jean-Paul Salvestriniet al. Materials Science in Semiconductor Processing, 2021, 132, pp.105909. ⟨10.1016/j.mssp.2021.105909⟩ Article dans une revue hal-03350514v1
Single crystalline boron rich B(Al)N alloys grown by MOVPE P. Vuong,A. Mballo,S. Sundaram,G. Patriarche,Y. Halfayaet al. Applied Physics Letters, 2020, 116 (4), pp.042101. ⟨10.1063/1.5135505⟩ Article dans une revue hal-02464319v1
Photovoltaic Concentration: Research and Development Sarah El Himer,Salima El Ayane,Sara El Yahyaoui,Jean-Paul Salvestrini,Ali Ahaitouf Energies, 2020, 13 (21), pp.5721. ⟨10.3390/en13215721⟩ Article dans une revue hal-03350722v1
Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN Phuong Vuong,Suresh Sundaram,Adama Mballo,Gilles Patriarche,Stefano Leoneet al. ACS Applied Materials & Interfaces, 2020, 12 (49), pp.55460 - 55466. ⟨10.1021/acsami.0c16850⟩ Article dans une revue hal-03350674v1
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates Soufiane Karrakchou,Suresh Sundaram,Taha Ayari,Adama Mballo,Phuong Vuonget al. Scientific Reports, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩ Article dans une revue hal-03120983v1
Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) Taha Ayari,Suresh Sundaram,Chris Bishop,Adama Mballo,Phuong Vuonget al. Advanced Materials Technologies, 2019, 4 (10), pp.1970057. ⟨10.1002/admt.201970057⟩ Article dans une revue hal-02321646v1
Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates J. Laifi,C. Saidi,N. Chaaben,A. Bchetnia,Y. El Gmiliet al. Materials Science in Semiconductor Processing, 2019, 101, pp.253-261. ⟨10.1016/j.mssp.2019.06.006⟩ Article dans une revue hal-02282621v1
Nanopyramid-based absorber to boost the efficiency of InGaN solar cells Walid El Huni,Soufiane Karrakchou,Yacine Halfaya,Muhammad Arif,Matthew B Jordanet al. Solar Energy, 2019, 190, pp.93-103. ⟨10.1016/j.solener.2019.07.090⟩ Article dans une revue hal-02282639v1
Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride Suresh Sundaram,Xin Li,Yacine Halfaya,Taha Ayari,Gilles Patriarcheet al. Advanced Materials Interfaces, 2019, pp.1900207. ⟨10.1002/admi.201900207⟩ Article dans une revue hal-02160835v1
MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates Suresh Sundaram,Xin Li,Saiful Alam,Taha Ayari,Yacine Halfayaet al. Journal of Crystal Growth, 2019, 507, pp.352-356. ⟨10.1016/j.jcrysgro.2018.10.060⟩ Article dans une revue istex hal-02282679v1
Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019) Suresh Sundaram,Xin Li,Yacine Halfaya,Taha Ayari,Gilles Patriarcheet al. Advanced Materials Interfaces, 2019, 6 (16), pp.1970102. ⟨10.1002/admi.201970102⟩ Article dans une revue hal-02282666v1
Observation of the early stages of GaN thermal decomposition at 1200 °C under N&lt;sub&gt;2&lt;/sub&gt; H. Bouazizi,Mohamed Bouzidi,Noureddine Chaaben,Youssef El Gmili,Jean-Paul Salvestriniet al. Materials Science and Engineering: B, 2018, 227, pp.16-21. ⟨10.1016/j.mseb.2017.10.002⟩ Article dans une revue hal-01831065v1
Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance Taha Ayari,Suresh Sundaram,Xin Li,Saiful Alam,Chris Bishopet al. ACS photonics, 2018, 5 (8), pp.3003-3008. ⟨10.1021/acsphotonics.8b00663⟩ Article dans une revue hal-02158426v1
Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery C Munson,Q. Gaimard,Kamel Merghem,S. Sundaram,J. Rogerset al. Journal of Physics D: Applied Physics, 2018, 51 (3), pp.035101. ⟨10.1088/1361-6463/aa9e41⟩ Article dans une revue cea-01765048v1
Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE Xin Li,Matthew B Jordan,Taha Ayari,Suresh Sundaram,Youssef El Gmiliet al. Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-00865-7⟩ Article dans une revue hal-01830854v1
Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates Y. El Gmili,P. Bonanno,S. Sundaram,Xiaojian Li,R. Puybaretet al. Optical Materials Express, 2017, 7 (2), ⟨10.1364/OME.7.000376⟩ Article dans une revue hal-01830918v1
Optimization of semibulk InGaN-based solar cell using realistic modeling Walid El-Huni,Anne Migan-Dubois,Zakaria Djebbour,Zakaria Djebbour,Paul L. Vosset al. Solar Energy, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩ Article dans une revue hal-01630066v1
Improving InGaN heterojunction solar cells efficiency using a semibulk absorber M. Arif,W. Elhuni,J. Streque,S. Sundaram,S. Belahseneet al. Solar Energy Materials and Solar Cells, 2017, 159, pp.405 - 411. ⟨10.1016/j.solmat.2016.09.030⟩ Article dans une revue istex hal-01420490v1
Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission Saiful Alam,Suresh Sundaram,Xin Li,Miryam Jamroz,Youssef El Gmiliet al. Physica Status Solidi A (applications and materials science), 2017, 214 (8), pp.1600868. ⟨10.1002/pssa.201600868⟩ Article dans une revue hal-01830966v1
Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well Saiful Alam,Suresh Sundaram,Xin Li,Youssef El Gmili,Miryam Elouneg-Jamrozet al. Superlattices and Microstructures, 2017, 112, pp.279-286. ⟨10.1016/j.spmi.2017.09.032⟩ Article dans une revue hal-01831029v1
InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop Saiful Alam,Suresh Sundaram,Miryam Elouneg-Jamroz,Xin Li,Youssef El Gmiliet al. Superlattices and Microstructures, 2017, 104, pp.291-297. ⟨10.1016/j.spmi.2017.02.036⟩ Article dans une revue hal-01830907v1
Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates Renaud Puybaret,David Rogers,Youssef El Gmili,Suresh Sundaram,Matthew B Jordanet al. Nanotechnology, 2017, 28 (19), pp.195304. ⟨10.1088/1361-6528/aa6a43⟩ Article dans une revue hal-01830993v1
Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature J. Laifi,N. Chaaben,Y. El Gmili,Jean-Paul Salvestrini,A. Bchetniaet al. Vacuum, 2017, 138, pp.8-14. ⟨10.1016/j.vacuum.2017.01.007⟩ Article dans une revue hal-01830926v1
Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications Taha Ayari,Chris Bishop,Matthew B Jordan,Suresh Sundaram,Xin Liet al. Scientific Reports, 2017, 7 (1), pp.15212. ⟨10.1038/s41598-017-15065-6⟩ Article dans une revue hal-01824881v1
Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode Sarrah Amor,Ali Ahaitouf,Abdelaziz Ahaitouf,Jean-Paul Salvestrini,Abdallah Ougazzaden Superlattices and Microstructures, 2017, 101, pp.529-536. ⟨10.1016/j.spmi.2016.11.011⟩ Article dans une revue hal-01830928v1
Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I – V and admittance measurement Neslihan Ayarci Kuruoğlu,Orhan Özdemir,Kutsal Bozkurt,Suresh Sundaram,Jean-Paul Salvestriniet al. Journal of Physics D: Applied Physics, 2017, 50 (50), ⟨10.1088/1361-6463/aa98b2⟩ Article dans une revue hal-01831076v1
Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells Saiful Alam,Suresh Sundaram,Helge Haas,Xin Li,Youssef El Gmiliet al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600496⟩ Article dans une revue hal-01830889v1
Role of V-pits in the performance improvement of InGaN solar cells Muhammad Arif,Jean-Paul Salvestrini,Jérémy Streque,Matthew B. Jordan,Youssef El Gmiliet al. Applied Physics Letters, 2016, 109 (13), pp.133507. ⟨10.1063/1.4963817⟩ Article dans une revue hal-02385085v1
Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE J. Laifi,N. Chaaben,H. Bouazizi,Najla Fourati,C. Zerroukiet al. Superlattices and Microstructures, 2016, 94, pp.30-38. ⟨10.1016/j.spmi.2016.02.037⟩ Article dans une revue hal-01277597v1
Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates Suresh Sundaram,Xin Li,Youssef El Gmili,Peter Bonanno,Renaud Puybaretet al. Nanotechnology, 2016, 27 (11), pp.115602. ⟨10.1088/0957-4484/27/11/115602⟩ Article dans une revue hal-02277942v1
Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells Rabeb Belghouthi,Jean-Paul Salvestrini,Mohamed Hichem Gazzeh,Christyves Chevallier Superlattices and Microstructures, 2016, 100, pp.168 - 178. ⟨10.1016/j.spmi.2016.09.016⟩ Article dans une revue istex hal-01521110v1
Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT Chris Bishop,Yacine Halfaya,Ali Soltani,Suresh Sundaram,Xin Liet al. IEEE Sensors Journal, 2016, 16 (18), pp.6828-6838. ⟨10.1109/JSEN.2016.2593050⟩ Article dans une revue hal-02385234v1
Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask Renaud Puybaret,Gilles Patriarche,Matthew B. Jordan,Suresh Sundaram,Youssef El Gmiliet al. Applied Physics Letters, 2016, 108 (10), pp.103105. ⟨10.1063/1.4943205⟩ Article dans une revue hal-01220089v1
Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy Xin Li,Suresh Sundaram,Youssef El Gmili,Taha Ayari,Renaud Puybaretet al. Crystal Growth & Design, 2016, 16 (6), pp.3409-3415. ⟨10.1021/acs.cgd.6b00398⟩ Article dans une revue hal-02385055v1
Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN Taha Ayari,Suresh Sundaram,Xin Li,Youssef El Gmili,Paul B Vosset al. Applied Physics Letters, 2016, 108 (17), pp.171106. ⟨10.1063/1.4948260⟩ Article dans une revue hal-02385100v1
Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree Houda Bouazizi,Noureddine Chaaben,Youssef El Gmili,Amor Bchetnia,Jean-Paul Salvestriniet al. Journal of Crystal Growth, 2016, 434, pp.72-76. ⟨10.1016/j.jcrysgro.2015.10.035⟩ Article dans une revue istex hal-01256993v1
High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells Walid El-Huni,Anne Migan-Dubois,Zakaria Djebbour,Jean-Paul Salvestrini,Abdallah Ougazzaden Progress in Photovoltaics, 2016, 24 (11), pp.1436 - 1447. ⟨10.1002/pip.2807⟩ Article dans une revue istex hal-01420488v1
Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems Yacine Halfaya,Chris Bishop,Ali Soltani,Sundaram Suresh,Vincent Aubryet al. Sensors, 2016, 16, pp.273. ⟨10.3390/s16030273⟩ Article dans une revue hal-01277595v1
BAlN thin layers for deep UV applications Xin Li,Suresh Sundaram,Youssef El Gmili,Tarik Moudakir,Frédéric Gentyet al. Physica Status Solidi A (applications and materials science), 2015, 212 (4), pp.745-750. ⟨10.1002/pssa.201400199⟩ Article dans une revue hal-01108100v1
Model of Ni-63 battery with realistic PIN structure Charles Munson,Muhammad Arif,Jeremy Streque,Belahsene Sofiane,Anthony Martinezet al. Journal of Applied Physics, 2015, 118 (10), pp.105101. ⟨10.1063/1.4930870⟩ Article dans une revue hal-01203762v1
Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (001) Jihed Laifi,Noureddine Chaaben,Houda Bouazizi,Najla Fourati,C. Zerroukiet al. Superlattices and Microstructures, 2015, 86, pp.472-482. ⟨10.1016/j.spmi.2015.08.015⟩ Article dans une revue istex hal-01203774v1
Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation Sofiane Belhasene,Noor Alhuda Al Saqri,Dler Jameel,Abdelmadjid Mesli,Anthony Martinezet al. Electronics, 2015, 4 (4), pp.1090-1100. ⟨10.3390/electronics4041090⟩ Article dans une revue hal-01257014v1
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm Xiaogai Li,S Sundaram,Pierre Disseix,G Le Gac,S Bouchouleet al. Optical Materials Express, 2015, 5 (2), pp.381-392. ⟨10.1364/OME.5.000380⟩ Article dans une revue hal-01108085v1
Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates Suresh Sundaram,Youssef El Gmili,Renaud Puybaret,Li X.,P.L. Bonannoet al. Applied Physics Letters, 2015, 107 (113105), ⟨10.1063/1.4931132⟩ Article dans une revue hal-01203766v1
Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors Chris Bishop,Jean-Paul Salvestrini,Yacine Halfaya,Sundaram Suresh,Youssef El Gmiliet al. Applied Physics Letters, 2015, 106 (24), pp.243504. ⟨10.1063/1.4922803⟩ Article dans une revue hal-01170536v1
MOVPE grown periodic AlN/BAlN heterostructure with high boron content Xin Li,Suresh Sundaram,Youssef El-Gmili,Frédéric Genty,Sophie Bouchoüleet al. Journal of Crystal Growth, 2015, 414, pp.119-122. ⟨10.1016/j.jcrysgro.2014.09.030⟩ Article dans une revue hal-01212596v1
High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices Sundaram Suresh,Renaud Puybaret,Xin Li,Youssef El Gmili,Jérémy Strequeet al. Physica Status Solidi A (applications and materials science), 2015, 212 (4), pp.740-744. ⟨10.1002/pssa.201400278⟩ Article dans une revue istex hal-04596008v1
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Xin Li,G. Le Gac,Sophie Bouchoule,Youssef El-Gmili,G. Patriarcheet al. Journal of Crystal Growth, 2015, 432, pp.37-44. ⟨10.1016/j.jcrysgro.2015.09.013⟩ Article dans une revue hal-01212591v1
Bandgap energy bowing parameter of strained and relaxed InGaN layers, Gaëlle Orsal,Youssef El Gmili,Nicolas Fressengeas,Jérémy Streque,Ryad Djerboubet al. Optical Materials Express, 2014, 4 (5), pp.1030-1041. ⟨10.1364/OME.4.001030⟩ Article dans une revue hal-01170545v1
Calculation of the dispersion of the electro-optical and second harmonic coefficients from the refractive index dispersion Marc D. Fontana,Mustapha Abarkan,Jean-Paul Salvestrini Optical Materials, 2014, 36 (4), pp.764-768. ⟨10.1016/j.optmat.2013.11.020⟩ Article dans une revue hal-01077689v1
Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Suresh Sundaram,Renaud Puybaret,Xin Li,Youssef El Gmili,Konstantinos Pantzaset al. Journal of Applied Physics, 2014, 116 (16), pp.163105-163105-6. ⟨10.1063/1.4900531⟩ Article dans une revue hal-01077688v1
Characteristics of the surface microstructures in thick InGaN layers on GaN Y. El Gmili,G. Orsal,K. Pantzas,A. Ahaitouf,T. Moudakiret al. Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩ Article dans une revue hal-00815384v1
Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study Y. El Gmili,G. Orsal,K. Pantzas,T. Moudakir,S. Sundaranet al. Acta Materialia, 2013, 61, pp.6587-6596. ⟨10.1016/j.actamat.2013.07.041⟩ Article dans une revue istex hal-00845424v1
Interface states effects in GaN Schottky diodes Abdelaziz Ahaitouf,Hussein Srour,Sidi Ould Saad Hamady,Nicolas Fressengeas,Abdallah Ougazzadenet al. Thin Solid Films, 2012, 522, pp.345-351. ⟨10.1016/j.tsf.2012.08.029⟩ Article dans une revue hal-00720225v1
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M. Abid,T. Moudakir,G. Orsal,S. Gautier,A. En Naciriet al. Applied Physics Letters, 2012, 100 (5), pp.051101. ⟨10.1063/1.3679703⟩ Article dans une revue hal-00666779v1
Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP Ali Ahaitouf,Abdelaziz Ahaitouf,Jean-Paul Salvestrini,Hussein Srour Journal of Semiconductors, 2011, 32 (10), pp.104002. ⟨10.1088/1674-4926/32/10/104002⟩ Article dans une revue istex hal-00643996v1
Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices H Srour,Jean-Paul Salvestrini,A Ahaitouf,S Gautier,T Moudakiret al. Applied Physics Letters, 2011, 99 (22), pp.221101. ⟨10.1063/1.3662974⟩ Article dans une revue hal-01277006v1
Analysis and control of DC drift in LiNbO3-based Mach-Zehnder modulators Jean-Paul Salvestrini,Laurent Guilbert,Marc Fontana,Mustapha Abarkan,Stéphane Gille Journal of Lightwave Technology, 2011, 29 (10), pp.1522-1534. ⟨10.1109/JLT.2011.2136322⟩ Article dans une revue hal-00642162v1
Contribution separators wide margin processing of remote sensing data A. Khireddine,Jean-Paul Salvestrini IJCEE - International Journal of Computer and Electrical Engineering, 2010, 2 (4), pp.1793-8163. ⟨10.7763/IJCEE.2010.V2.227⟩ Article dans une revue hal-00473710v1
Use of functionalized nanosilica to improve thermo-mechanical properties of epoxy adhesive joint bonding aluminium substrates C. Sperandio,A. Laachachi,D. Ruch,C. Poilâne,P. Boursonet al. Journal of Nanoscience and Nanotechnology, 2010, 10 (4), pp.2844-2849. ⟨10.1166/jnn.2010.1458⟩ Article dans une revue hal-00322143v1
Signal processing techniques for the ultrasound characterization of complex materials A. Khireddine,Jean-Paul Salvestrini IJCEE - International Journal of Computer and Electrical Engineering, 2009, 1 (5), pp.666-672. ⟨10.7763/IJCEE.2009.V1.103⟩ Article dans une revue hal-00473709v1
Structural and morphological studies of GaN thin films grown on different oriented LiNbO 3 substrates by MOVPE Tarik Moudakir,G. Orsal,N. Maloufi,A. Sirenko,S. Gautieret al. European Physical Journal: Applied Physics, 2008, 43 (3), pp.295-299. ⟨10.1051/epjap:2008144⟩ Article dans une revue istex hal-01277015v1
Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystals Mustapha Abarkan,Michel Aillerie,Jean-Paul Salvestrini,Marc D. Fontana,Edvard Kokanyan Applied Physics B - Laser and Optics, 2008, 92, pp.603-608. ⟨10.1007/s00340-008-3124-1⟩ Article dans une revue hal-00311729v1
Structural and morphological studies of GaN thin ﬁlms grown on diﬀerent oriented LiNbO3 substrates by MOVPE T. Moudakir,G. Orsal,N. Maloufi,A. A. Sirenko,S. Gautieret al. European Physical Journal: Applied Physics, 2008, 43 (3), pp.295-299. ⟨10.1051/epjap:2008144⟩ Article dans une revue istex hal-00181707v1
Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal M. Abarkan,Jean-Paul Salvestrini,M.D. Fontana,Mireille Cuniot-Ponsard Applied Physics B - Laser and Optics, 2008, 91, pp.489-492. ⟨10.1007/s00340-008-3033-3⟩ Article dans une revue istex hal-00322257v1
GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE A. Ougazzaden,T. Moudakir,T. Aggerstam,G. Orsal,Jean-Paul Salvestriniet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 1-3, ⟨10.1002/pssc.200778490⟩ Article dans une revue istex hal-00181670v1
New versatile and linear optical sensor based on electro-optical modulation and compensation Rémy Claverie,Jean-Paul Salvestrini,Marc Fontana,Pascal Ney Review of Scientific Instruments, 2008, 79, pp.123103. ⟨10.1063/1.3036979⟩ Article dans une revue hal-00302942v1
Investigation of LiNbO3 and LiTaO3 single crystals for pyroelectric applications in the wide temperature range Svetlana L Bravina,Nicholas V Morozovsky,Anna N Morozovska,Stéphane Gille,Jean-Paul Salvestriniet al. Ferroelectrics, 2007, 353, pp.636-645. ⟨10.1080/00150190701368166⟩ Article dans une revue hal-00186014v1
Optical characterization of YCa4O(BO3)3 and Nd:YCa4O(BO3)3 crystals P. Segonds,B. Boulanger,B. Menaert,Julien Zaccaro,Jean-Paul Salvestriniet al. Optical Materials, 2007, 29 (8), pp.975-982. ⟨10.1016/j.optmat.2005.11.036⟩ Article dans une revue istex hal-00186004v1
The electro-optic r22 coefficients and acoustic contributions in LiTaO3 crystal Haitham Saadon,Nicéphore Théofanous,Michel Aillerie,Mustapha Abarkan,Jean-Paul Salvestriniet al. Journal of Optics A: Pure and Applied Optics, 2006, 8, pp.677-682. ⟨10.1088/1464-4258/8/8/009⟩ Article dans une revue istex hal-00186002v1
Electro-optic, thermo-optic, and dielectric properties of YCOB and Nd:YCOB crystals: comparative study Mustapha Abarkan,Jean-Paul Salvestrini,Denis Pelenc,Marc Fontana Journal of the Optical Society of America B, 2005, 22 (2), pp.398-406. ⟨10.1364/JOSAB.22.000398⟩ Article dans une revue hal-00186010v1
High frequency response and wavelength dispersion of the linear electro-optic effect in PZN-PT (88/12) single crystal Jean-Paul Salvestrini,L. Lebrun,M. Abarkan,G. Sebald,M. Wanget al. Applied Physics B - Laser and Optics, 2005, 80 (4-5), pp.413-417. ⟨10.1007/s00340-005-1755-z⟩ Article dans une revue istex hal-00186008v1
Temperature stability of elastic and piezoelectric properties in LiNbO single crystal Iwona Franke,Ewa Talik,Krystian Roleder,Katalin Polgár,Jean-Paul Salvestriniet al. Journal of Physics D: Applied Physics, 2005, 38 (24), pp.4308-4312. ⟨10.1088/0022-3727/38/24/007⟩ Article dans une revue hal-00186006v1
Complex elastic properties and piezoelectric activity in stoichiometric and congruent LiNbO3 single crystals Iwona Franke,Jean-Paul Salvestrini,Marc Fontana,Krystian Roleder Ferroelectrics, 2004, 304 (1), pp.155-158. ⟨10.1080/00150190490457843⟩ Article dans une revue hal-00186020v1
Comparative study of nonlinear crystals for electro-optic Q-switching of laser resonators Jean-Paul Salvestrini,Mustapha Abarkan,Marc Fontana Optical Materials, 2004, 26, pp.449-458. ⟨10.1016/j.optmat.2003.10.009⟩ Article dans une revue istex hal-00186026v1
Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals M. Abarkan,Jean-Paul Salvestrini,M. D. Fontana,M. Aillerie Applied Physics B - Laser and Optics, 2003, 76, pp.765-769. ⟨10.1007/s00340-003-1196-5⟩ Article dans une revue istex hal-00186027v1
Frequency dispersion of electro-optical properties over a wide range by means of time-response analysis Mustapha Abarkan,Jean-Paul Salvestrini,Michel Aillerie,Marc Fontana Applied optics, 2003, 42 (13), pp.2346-2353. ⟨10.1364/AO.42.002346⟩ Article dans une revue hal-00186028v1
Enhancement of the electro-optical properties in hybrid organic-inorganic crystals by molecular engineering Jean-Paul Salvestrini,Mustapha Abarkan,Julien Zaccaro,Alain Ibanez Journal of the Optical Society of America B, 2003, 20 (8), pp.1661-1665. ⟨10.1364/JOSAB.20.001661⟩ Article dans une revue hal-00186024v1
Birefringence measurements by means of light deflection at domain wal ls in ferroelastic crystals P. Kolata,L. Guilbert,M.D. Fontana,Jean-Paul Salvestrini,Z. Czapla Journal of the Optical Society of America B, 2000, 17 (12), pp.1973-1979. ⟨10.1364/JOSAB.17.001973⟩ Article dans une revue hal-00186030v1
Indirect Pockels effect in rubidium hydrogen selenate Laurent Guilbert,Jean-Paul Salvestrini,Z. Czapla Journal of the Optical Society of America B, 2000, 17 (12), pp.1980-1985. ⟨10.1364/JOSAB.17.001980⟩ Article dans une revue hal-00186033v1
Electric-field frequency dependence of Pockels coefficients in 2-amino-5-nitropyridium dihydrogen phosphate organic–inorganic crystals Julien Zaccaro,Jean-Paul Salvestrini,A. Ibanez,P. Ney,M. D. Fontana Journal of the Optical Society of America B, 2000, 17 (3), pp.427-432. ⟨10.1364/JOSAB.17.000427⟩ Article dans une revue hal-00186035v1
Combined effects due to phase, intensity and contrast in electrooptic modulation. Application to ferroelectric materials L. Guilbert,Jean-Paul Salvestrini,H. Hassan,M. D. Fontana IEEE Journal of Quantum Electronics, 1999, 35 (3), pp.273-280 Article dans une revue hal-00186038v1
Electro-optic properties of LiKSO4 and LiK1−x Rbx SO4 crystals A. Righi,Jean-Paul Salvestrini,P. Bourson,R. L. Moreira,M. D. Fontana Applied Physics B - Laser and Optics, 1998, 67 (5), pp.559-562. ⟨10.1007/s003400050545⟩ Article dans une revue hal-00186044v1
Optical characteristics of triclinic rubidium hydrogen selenate L. Guilbert,Jean-Paul Salvestrini,P. Kolata,F. X. Abrial,M. D. Fontanaet al. Journal of the Optical Society of America B, 1998, 15 (3), pp.1009-1016. ⟨10.1364/JOSAB.15.001009⟩ Article dans une revue hal-00186047v1
Electro-optical and deflection properties of ammonium and rubidium hydrogen selenate crystals - Application to development of a low power Pockels cell P. Kolata,L. Guilbert,Jean-Paul Salvestrini,M. Aillerie,M.D. Fontana Annales de Physique, 1998, 23, pp.163-164 Article dans une revue hal-00186042v1
Investigation of electrooptic modulation from organic-inorganic crystals Jean-Paul Salvestrini,Julien Zaccaro,Alain Ibanez,Marc Fontana Applied Physics B - Laser and Optics, 1998, 67 (6), pp.761-763. ⟨10.1007/s003400050578⟩ Article dans une revue istex hal-00186039v1
Correlation between dielectric and electrooptic properties related to domains dynamics in RbHSeO crystals L. Guilbert,Jean-Paul Salvestrini,M. D. Fontana,Z. Czapla Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (5), pp.2523-2528. ⟨10.1103/PhysRevB.58.2523⟩ Article dans une revue hal-00186045v1
Electrooptical properties of rubidium hydrogen selenate Jean-Paul Salvestrini,L. Guilbert,M. D. Fontana,Z. Czapla Journal of the Optical Society of America B, 1997, 14 (11), pp.2818-2822. ⟨10.1364/JOSAB.14.002818⟩ Article dans une revue hal-00186050v1
Comparative measurements of the frequency dependence of the electrooptical and dielectric coefficient in inorganic crystals Jean-Paul Salvestrini,M. D. Fontana,B. Wyncke,F. Brehat Nonlinear Optics, 1997, 17, pp.271-280 Article dans une revue hal-00186051v1
Electrooptic investigations in ammonium hydrogen selenate (NH4 HSeO4) Jean-Paul Salvestrini,L. Guilbert,M. D. Fontana,Z. Czapla Ferroelectrics, 1996, 185 (1), pp.257-260. ⟨10.1080/00150199608210527⟩ Article dans une revue hal-00186463v1
New material with strong electro‐optic effect: Rubidium hydrogen selenate (RbHSeO4) Jean-Paul Salvestrini,Marc D. Fontana,Michel Aillerie,Z. Czapla Applied Physics Letters, 1994, 64 (15), pp.1920-1922. ⟨10.1063/1.111742⟩ Article dans une revue hal-00186053v1

Brevet (7)

Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component Chris Bishop,Vincent Aubry,Abdallah Ougazzaden,Jean-Paul Salvestrini,Paul L. Voss United States, Patent n° : 16341822. III-NITRIDE MATERIALS. 2020 Brevet hal-03350688v1
Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s) Vincent Aubry,Abdallah Ougazzaden,Jean-Paul Salvestrini,Paul Voss,Yacine Halfaya United States, Patent n° : US 20200278315A1. III-NITRIDE MATERIALS. 2020 Brevet hal-03414657v1
Capteur de détection de gaz d'un composant d'un gaz Laetitia Pradere,Yacine Halfaya,Abdallah Ougazzaden,Paul L Voss,Jean-Paul Salvestriniet al. France, N° de brevet: FR 1462278 2014. 2015 Brevet hal-01281130v1
Capteur Schottky de detection d’un constituant d’un gaz d’echappement Chris Bishop,Abdallah Ougazzaden,Jean-Paul Salvestrini,P.L. Voss,Laetitia Pradereet al. France, N° de brevet: FR 1462277 2014. 2014 Brevet hal-01281183v1
Capteur thermooptique de temp ́erature utilisant la modulation ́electrique d'un signal optique M. Aillerie,P. Kolata,Jean-Paul Salvestrini,L. Guilbert,M. D. Fontana France, N° de brevet: 9609271. 1997 Brevet hal-00186275v1
Modulateur ́electrooptique Jean-Paul Salvestrini,M. D. Fontana N° de brevet: 95-909822.9. 1995 Brevet hal-00186278v1
Dispositif de polarisation et de modulation ́electrooptique de lumiere, utilisant un cristal de faible dimension Jean-Paul Salvestrini,M. D. Fontana N° de brevet: 9402015. 1994 Brevet hal-00186279v1