Jérôme Saint-Martin Jérôme Saint Martin, Professeur des universités, ENS Paris Saclay - Univ Paris Saclay,

Identifiants chercheurs

IdHAL :

jerome-saint-martin

ORCID :

0000-0002-6540-8416

IdRef :

094968608

Publications

Article dans une revue (54)

Static and dynamic Monte Carlo simulations of phonon drag effects on thermoelectric properties in silicon nanostructures Mohammad Ghanem,Philippe Dollfus,Raja Sen,Jelena Sjakste,Jérôme Saint-Martin Computational Materials Science, 2026, 268, pp.114630. ⟨10.1016/j.commatsci.2026.114630⟩ Article dans une revue hal-05447127v1
Multiple topological phase transitions in double-bridged polyacene polymers: Ab initio parametrized stacked Su-Schrieffer-Heeger model M. Aktas,M. Mosaferi,J. Saint-Martin,A. Chin,D. Romanin Physical Review B, 2025, 112 (4), pp.045130. ⟨10.1103/x7mg-wvxx⟩ Article dans une revue hal-05175905v1
Monte Carlo simulation of thermoelectric properties in silicon nanofilms: diffusive seebeck coefficient analysis Mohammad Ghanem,Philippe Dollfus,Jérôme Saint-Martin Solid-State Electronics, 2025, 229, pp.109157. ⟨10.1016/j.sse.2025.109157⟩ Article dans une revue hal-05091543v1
Ultrafast dynamics of hot carriers: Theoretical approaches based on real-time propagation of carrier distributions Jelena Sjakste,Raja Sen,Nathalie Vast,Jérôme Saint-Martin,Mohammad Ghanemet al. The Journal of Chemical Physics, 2025, 162 (6), pp.061002. ⟨10.1063/5.0245834⟩ Article dans une revue hal-04946288v1
Anomalous Temperature-Dependent Thermal Transport in Crystalline Polyethylene Driven by Strong Anharmonicity Shouhang Li,Philippe Dollfus,Jérôme Saint-Martin,Davide Romanin Journal of Physical Chemistry Letters, 2025, 16 (39), pp.10210-10215. ⟨10.1021/acs.jpclett.5c02084⟩ Article dans une revue hal-05284461v1
Electron-phonon coupling and transient dynamics of hot carriers: from interpretation of photoemission experiments to transport simulations in devices Mohammad Ghanem,Philippe Dollfus,Jérôme Saint-Martin,Raja Sen,Nathalie Vastet al. Proceedings of SPIE, the International Society for Optical Engineering, 2024, Advances in Ultrafast Condensed Phase Physics IV, 12992, pp.1299207. ⟨10.1117/12.3022114⟩ Article dans une revue hal-04519274v1
Thermal conductance of twisted-layer graphite nanofibers Van-Truong Tran,Thanh-Tra Vu,Jérôme Saint-Martin,Marco Pala,Philippe Dollfus Carbon, 2023, 204, pp.601-611. ⟨10.1016/j.carbon.2022.12.059⟩ Article dans une revue hal-03995068v1
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials Adel Mfoukh,Jérôme Saint-Martin,Philippe Dollfus,Marco Pala Journal of Computational Electronics, 2023, 22, pp.1257-1263. ⟨10.1007/s10825-023-02080-2⟩ Article dans une revue hal-04161457v1
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices Remi Helleboid,Denis Rideau,Jeremy Grebot,Isobel Nicholson,Norbert Moussyet al. IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩ Article dans une revue hal-03794480v1
Phonon-assisted transport in van der Waals heterostructure tunnel devices A. M'Foukh,Jérôme Saint-Martin,Philippe Dollfus,Marco G. Pala Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩ Article dans une revue hal-03793956v1
Revisiting thermal conductivity and interface conductance at the nanoscale B. Davier,P. Dollfus,N.D. Le,S. Volz,J. Shiomiet al. International Journal of Heat and Mass Transfer, 2022, 183, Part A, pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩ Article dans une revue hal-03628712v1
Spectral Simulation of Heat Transfer Across Polytype Interfaces Nadjib Izitounene,Ngoc Duc Le,Brice Davier,Philippe Dollfus,Lorenzo Paulattoet al. Crystal Research and Technology, 2022, 57 (9), pp.2200017. ⟨10.1002/crat.202200017⟩ Article dans une revue hal-03864401v1
Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation N. Le,Brice Davier,N. Izitounene,Philippe Dollfus,J. Saint-Martin Journal of Computational Electronics, 2022, 21 (4), pp.744-755. ⟨10.1007/s10825-022-01885-x⟩ Article dans une revue hal-03859201v1
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines Rémi Helleboid,Denis Rideau,Jeremy Grebot,Isobel Nicholson,Norbert Moussyet al. Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩ Article dans une revue hal-03793952v1
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation Philippe Dollfus,Jérôme Saint-Martin,T. Cazimajou,R. Helleboid,A. Pilottoet al. Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩ Article dans une revue hal-03793955v1
Revisiting thermal conductivity and interface conductance at the nanoscale Brice Davier,Philippe Dollfus,N.D. Le,S. Volz,J. Shiomiet al. International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩ Article dans une revue hal-03859204v1
Revisiting thermal conductivity and interface conductance at the nanoscale Brice Davier,Philippe Dollfus,N D Le,Sebastian Volz,J Shiomiet al. International Journal of Heat and Mass Transfer, 2021, 183, ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩ Article dans une revue hal-03868857v1
Electron transport properties of graphene nanoribbons with Gaussian deformation Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus Physical Review B, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩ Article dans une revue hal-02935227v1
Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation Brice Davier,Jérôme Larroque,Philippe Dollfus,Laurent Chaput,Sebastian Volzet al. Journal of Physics: Condensed Matter, In press, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩ Article dans une revue hal-01906247v1
High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz Materials Today: Proceedings, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩ Article dans une revue hal-01927617v1
Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models Jérôme Larroque,Philippe Dollfus,Jérôme Saint-Martin Journal of Applied Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩ Article dans une revue hal-01906686v1
High thermoelectric performance of graphite nanofibers Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz Nanoscale, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩ Article dans une revue hal-01909447v1
Ab initio based calculations of the thermal conductivity at the micron scale Laurent Chaput,Jérôme Larroque,Philippe Dollfus,Jérôme Saint-Martin,David Lacroix Applied Physics Letters, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩ Article dans une revue hal-01689364v1
Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩ Article dans une revue hal-01631292v1
Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors Vincent Talbo,Jérôme Saint-Martin,Sylvie Galdin-Retailleau,Philippe Dollfus Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩ Article dans une revue hal-01906689v1
Third nearest neighbor parameterized tight binding model for graphene nano-ribbons Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz AIP Advances, 2017, 7 (7), ⟨10.1063/1.4994771⟩ Article dans une revue hal-01631290v1
Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons T. Nghiem,Jérôme Saint-Martin,P. Dollfus Journal of Computational Electronics, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩ Article dans une revue hal-01906694v1
Enhanced Seebeck effect in graphene devices by strain and doping engineering M. Chung Nguyen,V. Hung Nguyen,Huy-Viet Nguyen,Jérôme Saint-Martin,P. Dollfus Physica E: Low-dimensional Systems and Nanostructures, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩ Article dans une revue hal-01909501v1
High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus Nanotechnology, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩ Article dans une revue hal-01909496v1
Thermoelectric effects in graphene nanostructures Philippe Dollfus,Viet Hung Nguyen,Jérôme Saint-Martin Journal of Physics: Condensed Matter, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩ Article dans une revue hal-01909508v1
Strain-induced conduction gap in vertical devices made of misoriented graphene layers V Hung Nguyen,Huy-Viet Nguyen,Jérôme Saint-Martin,P. Dollfus Nanotechnology, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩ Article dans une revue hal-01909504v1
Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus Semiconductor Science and Technology, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩ Article dans une revue hal-01909498v1
New insights into self-heating in double-gate transistors by solving Boltzmann transport equations T. Thu Trang Nghiêm,Jérôme Saint-Martin,P. Dollfus Journal of Applied Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩ Article dans une revue hal-01906713v1
Entre utopie et réalités professionnelles, la Gymnastique Volontaire (GV) en France (1976-1985) Natalia Bazoge,J. Saint-Martin Carrefours de l'éducation, 2014, Hors-série « Education nationale – Jeunesse et Sports. Territoires en conflits ? », 3, pp.57-74 Article dans une revue hal-02063803v1
Enhanced thermoelectric figure of merit in vertical graphene junctions Viet-Hung Nguyen,Mai Chung Nguyen,Huy-Viet Nguyen,Jérôme Saint-Martin,Philippe Dollfus Applied Physics Letters, 2014, 105 (13), ⟨10.1063/1.4896915⟩ Article dans une revue hal-01910202v1
On the non-linear effects in graphene devices Viet Hung Nguyen,Alfonso Alarcón,Salim Berrada,Van Nam Do,Jérôme Saint-Martinet al. Journal of Physics D: Applied Physics, 2014, 47 (9), pp.094007 Article dans une revue hal-01951903v1
Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus Applied Physics Letters, 2014, 105 (7), ⟨10.1063/1.4893697⟩ Article dans une revue hal-01910199v1
Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors Alfonso Alarcón,Viet-Hung Nguyen,Salim Berrada,Damien Querlioz,Jérôme Saint-Martinet al. IEEE Transactions on Electron Devices, 2013, 60 (3), pp.985-991 Article dans une revue hal-01951940v1
Decoherence effects in the Wigner function formalism Philipp Schwaha,Damien Querlioz,Philipp Dollfus,Jérôme Saint-Martin,Mihail Nedjalkovet al. Journal of Computational Electronics, 2013, 12 (3), pp.388-396 Article dans une revue hal-01951931v1
Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor Ming Shi,Jérôme Saint-Martin,Arnaud Bournel,Damien Querlioz,Philippe Dollfuset al. Journal of Nanoscience and Nanotechnology, 2013, 13 (2), pp.771-775 Article dans une revue hal-01951943v1
Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications Ming Shi,Jérôme Saint-Martin,Arnaud Bournel,Damien Querlioz,Nicolas Wichmannet al. Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩ Article dans une revue istex hal-01910206v1
Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor Minghua Shi,J. Saint-Martin,A. Bournel,D. Querlioz,P. Dollfuset al. Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩ Article dans une revue hal-00795954v1
Graphene nanomesh transistor with high on/off ratio and good saturation behavior Salim Berrada,Viet Hung Nguyen,Damien Querlioz,Jérôme Saint-Martin,Alfonso Alarcónet al. Applied Physics Letters, 2013, 103 (18), ⟨10.1063/1.4828496⟩ Article dans une revue hal-01910209v1
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance Viet Hung Nguyen,Jérôme Saint-Martin,Damien Querlioz,Fulvio Mazzamuto,Arnaud Bournelet al. Journal of Computational Electronics, 2013, 12 (2), pp.85-93 Article dans une revue hal-01951935v1
Graphene nanomesh transistor with high on/off ratio and good saturation behavior Salim Berrada,Viet Hung Nguyen,Damien Querlioz,Jérôme Saint-Martin,Alfonso Alarcónet al. Applied Physics Letters, 2013, 103 (18), pp.183509 Article dans une revue hal-01951910v1
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons F. Mazzamuto,V. Hung Nguyen,Y. Apertet,C. Caër,C. Chassatet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩ Article dans une revue hal-01909440v1
Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study Audrey Valentin,F. Mazzamuto,J. Saint-Martin,C. Chassat,P. Dollfus Journal of Applied Physics, 2011, 109 (6), pp.064516. ⟨10.1063/1.3552293⟩ Article dans une revue hal-03440047v1
Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology Vincent Barral,Thierry Poiroux,Jérôme Saint-Martin,Daniela Munteanu,Jean-Luc Autranet al. IEEE Transactions on Electron Devices, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩ Article dans une revue hal-01430106v1
Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study Fulvio Mazzamuto,Jérôme Saint-Martin,Arnaud Bournel,P. Dollfus,Alexandre Archambaultet al. Journal of Physics: Conference Series, 2009, 193 (1), pp.012015. ⟨10.1088/1742-6596/193/1/012015⟩ Article dans une revue hal-00574368v1
Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors K. Huet,D. Querlioz,W. Chaisantikulwat,J. Saint-Martin,A. Bournelet al. Journal of Applied Physics, 2008, 104 (4), pp.044504-1-7 Article dans une revue hal-00391733v1
Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation A. Bournel,V. Aubry-Fortuna,J. Saint-Martin,P. Dollfus Solid-State Electronics, 2007, 51 (4), pp.543-550. ⟨10.1016/j.sse.2007.02.010⟩ Article dans une revue istex hal-02452609v1
On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation D. Querlioz,Jérôme Saint-Martin,K. Huet,A. Bournel,V. Aubry-Fortunaet al. IEEE Transactions on Electron Devices, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩ Article dans une revue hal-01909433v1
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas Jérôme Saint-Martin,A. Bournel,F Monsef,C. Chassat,P. Dollfus Semiconductor Science and Technology, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩ Article dans une revue istex hal-01909484v1
On the Ballistic Transport in Nanometer-Scaled DG MOSFETs Jérôme Saint-Martin,A. Bournel,P. Dollfus IEEE Transactions on Electron Devices, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩ Article dans une revue hal-01909466v1

Communication dans un congrès (27)

Self-Consistent Advection-Diffusion Monte Carlo Simulation of Quenching in Single-Photon Avalanche Diodes Rémi Helleboid,Kenzo Morel-Handa,Isobel Nicholson,Gabriel Mugny,Denis Rideauet al. International Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States Communication dans un congrès hal-05418456v1
Temperature and doping level effect on silicon thermal conductivity Juan Carlos Acosta Abanto,Mélanie Brouillard,Raja Sen,Jelena Sjakste,Lorenzo Paulattoet al. Phonons 2025 (International Conference on Phonon Scattering in Condensed Matter), Dec 2025, Buenos Aires, Argentina Communication dans un congrès hal-05407127v1
Improved Stochastic SPAD Quenching Model Including Build-Up Field Effect Rémi Helleboid,Samuel Dahan,Kenzo Morel-Handa,Gabriel Mugny,Isobel Nicholsonet al. 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186367⟩ Communication dans un congrès hal-05411841v1
Phonon Thermal Transport Along the Chain Direction of Crystalline Polyethylene Shouhang Li,Philippe Dollfus,Jérôme Saint-Martin,D. Romanin International Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States Communication dans un congrès hal-05418477v1
Transient Thermal Response in 2D h-BN/Graphene Heterostructures : Ab initio based Monte Carlo simulation Junbum Park,Lorenzo Paulatto,Marco Pala,Jérôme Saint-Martin Nanoscale and Microscale Heat Transfer (NMHT) VIII, Jun 2024, Girona, Spain Communication dans un congrès hal-04740290v1
Monte Carlo simulation of ThermoElectric Properties in Nanostructures Mohammad Ghanem,Philippe Dollfus,Jérôme Saint-Martin Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece Communication dans un congrès hal-04740322v1
Coupling ab-initio Description and Monte Carlo Simulation to Capture the Transport of Hot Carriers Mohammad Ghanem,Jelena Sjakste,Raja Sen,Alessandro Pilotto,Philippe Dollfuset al. Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece Communication dans un congrès hal-04740315v1
Full Band Monte Carlo simulation of transient and stationary thermal transport in GaAs porous nanostructures based on ab initio calculation Junbum Park,Lorenzo Paulatto,Marco Pala,Jérôme Saint-Martin International Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain Communication dans un congrès hal-04740333v1
Full Band Monte Carlo simulation of 2D h-BN nanostructure for phonon transport based on ab initio calculation Junbum Park,Lorenzo Paulatto,Marco Pala,Jérôme Saint-Martin 17th International Conference on Phonon Scattering in Condensed Matter, Phonons 2023, Jul 2023, Paris, France Communication dans un congrès hal-04740306v1
Automatic optimization of doping profile for high performance Single-Photon Avalanche Diodes Helleboid Rémi,Jérôme Saint-Martin,Marco Pala,Philippe Dollfus,Rideau Deniset al. International Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain Communication dans un congrès hal-04740345v1
Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability Denis Rideau,Y. Oussaiti,J. Grebot,R. Helleboid,A. Lopezet al. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States Communication dans un congrès hal-03374008v1
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability Marco G. Pala,D. Rideau,Y. Oussaiti,J. Grebot,R. Helleboidet al. 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.293-296, ⟨10.1109/SISPAD54002.2021.9592567⟩ Communication dans un congrès hal-03445562v1
Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics Thibauld Cazimajou,Marco Pala,Jérôme Saint-Martin,Denis Rideau,Philippe Dollfus 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea Communication dans un congrès hal-03254209v1
Study of the modal contributions to the heat flux to characterize the phonon transport regime in Si/Ge heterojunctions Ngoc Duc Le,Brice Davier,Philippe Dollfus,Jérôme Saint-Martin 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea Communication dans un congrès hal-03254218v1
Spectral simulation of heat transfer across polytype interfaces N. Izitounene,N. D. Le,B. Davier,P. Dollfus,Lorenzo Paulattoet al. Fall Meeting of the European Materials Research Society (E-MRS) 2021, Sep 2021, VIRTUAL Conference, Poland Communication dans un congrès hal-03276073v1
Full Band Monte Carlo simulation of phonon transfer at interfaces N.D. Le,B. Davier,P. Dollfus,Marco G. Pala,A. Bournelet al. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩ Communication dans un congrès hal-03029928v1
Nanoscale heat transfer via Ab-Initio Monte Carlo simulation Brice Davier,Jérôme Larroque,Philippe Dollfus,Laurent Chaput,Sebastian Volzet al. 20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States Communication dans un congrès hal-02187168v1
Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures B. Davier,J. Larroque,Philippe Dollfus,Laurent Chaput,S. Volzet al. Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland Communication dans un congrès hal-01951979v1
Thermoelectric properties of Quantum Dot-based devices Vincent Talbo,Jérôme Saint-Martin,Philippe Dollfus IEEE NANO 2018, Jul 2018, Cork, Ireland Communication dans un congrès hal-01952001v1
Enhanced Seebeck effect in graphene devices by strain and doping engineering Mai-Chung Nguyen,Viet-Hung Nguyen,Huy-Viet Nguyen,Jérôme Saint-Martin,Philippe Dollfus High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam Communication dans un congrès hal-01952016v1
Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach B. Davier,J. Larroque,P. Dollfus,Jérôme Saint-Martin High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam Communication dans un congrès hal-01952013v1
Full-Band modelling of phonons in polytype Ge and Si J. Larroque,P. Dollfus,Jérôme Saint-Martin 20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007 Communication dans un congrès hal-01951995v1
Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation Minghua Shi,J. Saint-Martin,A. Bournel,D. Querlioz,P. Dollfuset al. 37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩ Communication dans un congrès hal-00799795v1
Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET Aurélien Olivier,Nicolas Wichmann,Jiongjong Mo,Albert M.D. Noudeviwa,Yannick Roelenset al. 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩ Communication dans un congrès hal-00549921v1
Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach D. Querlioz,J. Saint-Martin,V.-N. Do,A. Bournel,P. Dollfus 2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩ Communication dans un congrès hal-01827054v1
Étude de la mobilité effective dans les DG MOSFET quasi-balistiques K. Huet,J. Saint-Martin,A. Bournel,G. Ghibaudo,P. Dollfuset al. xxxx, 2006, Grenoble, France. pp.XX Communication dans un congrès hal-00148265v1
Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs Jérôme Saint-Martin,Damien Querlioz,Arnaud Bournel,Philippe Dollfus 2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩ Communication dans un congrès hal-01827057v1

Poster de conférence (2)

Thermal Conductivity of Single Polymer Chains from First-principles Including Quantum and Anharmonic Effects Shouhang Li,Adel M'Foukh,Philippe Dollfus,Jérôme Saint-Martin,D. Romanin JOURNÉES PLÉNIIÈRES DU GDR NAME 2024, Nov 2024, Lille, France Poster de conférence hal-04790424v1
Comparison of Si/Ge interface thermal transmission modellings: Full-band mismatch models, lattice dynamics and Molecular Dynamics. B. Davier,A. Alkurdi,J. Larroque,S. Volz,S. Merabiaet al. Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland. Poster de conférence hal-01951962v1

Pré-publication, Document de travail (2)

Competing effects of charge-carrier and impurity scattering limiting phonon heat conduction in heavily-doped silicon Raja Sen,Juan Carlos Acosta Abanto,Mélanie Brouillard,Séverine Gomès,Jean-François Robillardet al. 2026 Pré-publication, Document de travail hal-05451267v1
Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation Philippe Dollfus,Jérôme Saint-Martin,Rémi Helleboid,Thibauld Cazimajou,Alessandro Pilottoet al. 2025 Pré-publication, Document de travail hal-05426318v1

Thèse (1)

ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI Jérôme Saint-Martin Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français. ⟨NNT : ⟩ Thèse tel-00011335v1

Proceedings/Recueil des communications (1)

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