Konstantinos Zekentes

Publications

Article dans une revue (33)

Improving SiC surface properties by hyaluronic acid hydrogel deposition for neural probe applications Scott Greenhorn,Rachel Auzély-Velty,Claude Verdier,Matthieu Weber,Isabelle Jeacomineet al. Surface and Coatings Technology, 2025, 512, ⟨10.1016/j.surfcoat.2025.132299⟩ Article dans une revue hal-05075122v1
Temperature Influence on the Deposition of Nitrogen-Doped Silicon Carbide Polycrystalline Films Michail Gavalas,Scott Greenhorn,Frédéric Mercier,Konstantinos Zekentes Coatings, 2025, 15 (1), pp.106. ⟨10.3390/coatings15010106⟩ Article dans une revue hal-05396544v1
Optimizing chemical resistance of PECVD amorphous silicon carbide thin films Scott Greenhorn,Valérie Stambouli,Edwige Bano,Andrei Uvarov,Sonia Ortega-Murilloet al. Journal of Non-Crystalline Solids, 2025, 666, pp.123723. ⟨10.1016/j.jnoncrysol.2025.123723⟩ Article dans une revue hal-05379544v1
Multi-technique study of composition, structure, and bonding in PECVD amorphous silicon carbide films Scott Greenhorn,Valérie Stambouli,Edwige Bano,François Pierre,Nicolas Gauthieret al. Materials Science in Semiconductor Processing, 2025, 192, pp.109444. ⟨10.1016/j.mssp.2025.109444⟩ Article dans une revue hal-05379623v1
Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization Michail Gavalas,Yann Gallou,Didier Chaussende,Elisabeth Blanquet,Frédéric Mercieret al. Micromachines, 2025, 16 (3), pp.276. ⟨10.3390/mi16030276⟩ Article dans une revue hal-05396550v1
Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation Scott Greenhorn,Valérie Stambouli,Edwige Bano,Konstantinos Zekentes Solid State Phenomena, 2024, 358, pp.31-35. ⟨10.4028/p-jqCtr5⟩ Article dans une revue hal-04743362v1
Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices Scott Greenhorn,Edwige Bano,Valérie Stambouli,Konstantinos Zekentes Materials, 2024, 17 (5), pp.1135. ⟨10.3390/ma17051135⟩ Article dans une revue hal-05353079v1
Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications Olfa Karker,Konstantinos Zekentes,Nikolaos Makris,Valerie Stambouli,Edwige Bano Key Engineering Materials, 2023, 946, pp.111-118. ⟨10.4028/p-03m3ss⟩ Article dans une revue hal-04272243v1
Optimizing PECVD a-SiC:H Films for Neural Interface Passivation Scott Greenhorn,Konstantinos Zekentes,Edwige Bano,Valerie Stambouli,Andrei Uvarov Key Engineering Materials, 2023, 947, pp.83-88. ⟨10.4028/p-762f40⟩ Article dans une revue hal-04272217v1
Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures Olfa Karker,Konstantinos Zekentes,Aude Bouchard,Isabelle Gélard,Xavier Mescotet al. Materials Science Forum, 2022, 1062, pp.608-612. ⟨10.4028/p-23d7ab⟩ Article dans une revue hal-04272260v1
Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications Konstantinos Zekentes,Jihoon Choi,Edwige Bano,Valérie Stambouli,Konstantinos Rogdakis Microelectronic Engineering, 2022, 255, pp.111704. ⟨10.1016/j.mee.2021.111704⟩ Article dans une revue hal-03860512v1
A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime Nikolaos Makris,Maria Kayambaki,Antonis Stavrinidis,George Konstantinidis,Konstantinos Zekentes Materials Science Forum, 2018, 924, pp.649-652. ⟨10.4028/www.scientific.net/MSF.924.649⟩ Article dans une revue hal-02008590v1
On the Optimum Determination and Use of SiC VJFET Threshold Voltage Maria Kayambaki,Nikolaos Makris,Antonis Stavrinidis,George Konstantinidis,Konstantinos Zekentes Materials Science Forum, 2018, 924, pp.657-660. ⟨10.4028/www.scientific.net/MSF.924.657⟩ Article dans une revue hal-02008578v1
High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs K. Vamvoukakis,A. Stavrinidis,D. Stefanakis,G. Konstantinidis,M. Kayambakiet al. E3S Web of Conferences, 2017, 16, pp.12001 Article dans une revue hal-02008624v1
Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs Antonis Stavrinidis,George Konstantinidis,Konstantinos Vamvoukakis,Konstantinos Zekentes Materials Science Forum, 2017, 897, pp.407-410. ⟨10.4028/www.scientific.net/MSF.897.407⟩ Article dans une revue hal-02066408v1
Channel width effect on the operation of 4H-SiC vertical JFETs K Vamvoukakis,D Stefanakis,A Stavrinidis,K Vassilevski,G Konstantinidiset al. Physica Status Solidi A (applications and materials science), 2017 Article dans une revue hal-01705998v1
Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs Ji Hoon Choi,Edwige Bano,Anne Henry,Giovanni Attolini,Konstantinos Zekentes Materials Science Forum, 2016, 858, pp.1001-1005. ⟨10.4028/www.scientific.net/MSF.858.1001⟩ Article dans une revue hal-02006603v1
4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes,Antonis Stavrinidis,George Konstantinidis,Maria Kayambaki,Konstantin Vamvoukakiset al. Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩ Article dans une revue hal-01391852v1
Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs Konstantinos Rogdakis,Edwige Bano,Laurent Montès,Mikhael Bechelany,David Cornuet al. IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.980 - 984. ⟨10.1109/TNANO.2010.2091147⟩ Article dans une revue hal-01695785v1
SiC nanowires: material and devices K. Zekentes,K Rogdakis Journal of Physics D: Applied Physics, 2011, 44 (13), pp.133001. ⟨10.1088/0022-3727/44/13/133001⟩ Article dans une revue hal-00606295v1
Si nanowire p-FET with asymmetric source-drain I-V characteristics L. Sang-Kwon,L. Seung-Yong,K. Rogdakis,J. Chan-Oh,K. Dong-Jooet al. Solid State Communications, 2009, 24 (12), pp.461-463 Article dans une revue hal-00596152v1
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs K. Rogdakis,S. Poli,Edwige Bano,K. Zekentes,M. G. Pala Nanotechnology, 2009, 20 (29), pp.295202 Article dans une revue hal-00596134v1
3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach, K. Rogdakis,S.Y. Lee,M. Bescond,S.K. Lee,Edwige Banoet al. IEEE Transactions on Electron Devices, 2008, 55 (8), pp.1970-1976 Article dans une revue hal-00392653v1
Microwave modulators based on 4H-SiC p-i-n diodes K. Zekentes,Nicolas Camara,V.V. Basanets,M.S. Boltovets,V. Krivutsaet al. IEEE Transactions on Microwave Theory and Techniques, 2008 Article dans une revue hal-00391484v1
Fabrication of Ion-implanted Si Nanowire p-FETs S.Y. Lee,C.O. Jang,K. Dong-Joo,H. Jung-Hwan,K. Rogdakiset al. Journal of Physical Chemistry C, 2008, 112, pp.13287-13291 Article dans une revue hal-00392664v1
Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes K. Rogadakis,M. Bescond,Edwige Bano,K. Zekentes Nanotechnology, 2007, 18, pp.475715-475720. ⟨10.1088/0957-4484/18/47/475715⟩ Article dans une revue istex hal-00353870v1
Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes Aurélie Thuaire,Michel Mermoux,Edwige Bano,Alexandre Crisci,Francis Bailletet al. Materials Science Forum, 2007, 556-557, pp. 909-912. ⟨10.4028/3-908453-69-0.909⟩ Article dans une revue hal-00386384v1
Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching Nicolas Camara,Aurélie Thuaire,Edwige Bano,K. Zekentes European Conf. on SiC and Related Materials, ECSCRM'04, 2005, 483-485, pp.773-776 Article dans une revue hal-00146143v1
Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching Nicolas Camara,Aurélie Thuaire,Edwige Bano,K. Zekentes Physica Status Solidi, 2005, a, pp.1-5 Article dans une revue hal-00145183v1
Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method Nicolas Camara,K. Zekentes,Edwige Bano,Aurélie Thuaire,A. Lebedev International Conf. on SiC and Related Materials ICSCRM'05, 2005, XX, pp.XX Article dans une revue hal-00146148v1
Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates Stéphane Monéger,Americo Tabata,C. Bru-Chevallier,G. Guillot,A. Georgakilaset al. Applied Physics Letters, 1993, 63 (12), pp.1654-1656 Article dans une revue hal-01977121v1
Oscillator strength of the E1HH1 excitonic transition as a function of magnetic field in modulation doped GaAlAs/GaAs quantum well P. Vicente,A. Kavokin,A. Raymond,S. Lyapin,K. Zekenteset al. Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-323-C5-326. ⟨10.1051/jp4:1993566⟩ Article dans une revue istex jpa-00251653v1
Optical properties of InGaAs films embedded in plasma etched InP wells. A. Georgakilas,Christou A.,Pierre Lefebvre,Jacques Allègre,K. Zekenteset al. Applied Physics Letters, 1992, 61 (7), pp.798. ⟨10.1063/1.107805⟩ Article dans une revue hal-01176049v1

Communication dans un congrès (26)

Fabrication of planar nanostructured SiC microelectrode arrays for longlifetime neural interfaces F Iacovella,G Pound-Lana,L Labbe,S Labau,C Petit-Etienneet al. MNE 2025 - 51st International Micro and Nano Engineering Conference, Sep 2025, Southamptom, United Kingdom Communication dans un congrès hal-05322214v1
Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devices Michalis Gavalas,Frédéric Mercier,E. Blanquet,Konstantinos Zekentes WOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece Communication dans un congrès hal-04819565v1
Hydrogel based functionalization of SiC films for new hybrid neural Interfaces Scott Greenhorn,Rachel Auzély-Velty,Claude Verdier,Matthieu Weber,Isabelle Gélardet al. E‐MRS Spring Meeting, May 2024, Strasbourg, France Communication dans un congrès hal-04756566v1
Composition and structure determination of PECVD amorphous silicon carbide : techniques, synergies, and optimization Scott Greenhorn,Konstantinos Zekentes,Edwige Bano,Valerie Stambouli Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), May 2024, Heraklion, Greece Communication dans un congrès hal-04756539v1
New SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing Olfa Karker,Konstantinos Zekentes,N Makris,Edwige Bano,Valerie Stambouli EUROSENSORS XXXV, Sep 2023, Lecce, Italy Communication dans un congrès hal-04756508v1
Comparing Monocrystalline SiC N-P-N Epitaxial and Implanted Junctions for Isolation in Neural Interfaces Scott Greenhorn,Gwenaelle Pound-Lana,Jumana Boussey,Edwige Bano,Valerie Stambouliet al. 47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) & 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (-EXMATEC 2024), May 2023, Palermo, Italy Communication dans un congrès hal-04756589v1
One-step fabrication of submicron/nanowires from SOI substrates by optimized proximity UV lithography Olfa Karker,Konstantinos Zekentes,Aude Bouchard,Isabelle Gélard,Valerie Stambouliet al. 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), Sep 2022, Louvain, Belgium Communication dans un congrès hal-04756650v1
SiC:H Characterization Towards Optimal MEA Neural Interface Passivation Scott Greenhorn,Konstantinos Zekentes,Edwige Bano,Valerie Stambouli,Andrei Uvarov 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal Communication dans un congrès hal-04756667v1
Fabrication of new SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing Olfa Karker,Konstantinos Zekentes,Nikolaos Makris,Edwige Bano,Valerie Stambouli Deuxièmes Rencontres Capteurs de l’Université Bourgogne Franche-Comté (RCUBFC), Nov 2022, Dijon, France Communication dans un congrès hal-04706478v1
A novel process to realize 4H-SiC nanowire arrays Maria Androulidaki,Maximilien Cottat,Antonios Stavrinidis,Cécile Gourgon,Camille Petit-Etienneet al. MNE 2019, Sep 2019, Rhodes, Greece Communication dans un congrès hal-02344211v1
4H-SiC Nanowire arrays formation by nanoimprint lithography, plasma etching and sacrificial oxidation Maximilien Cottat,Antonios Stavrinidis,Cécile Gourgon,Camille Petit-Etienne,Maria Androulidakiet al. WocSdice 2019, Jun 2019, Cabourg, France Communication dans un congrès hal-02344210v1
Cross-section doping topography of 4H-SiC VJFETs by various techniques K. Tsagaraki,Maher Nafouti,H. Peyre,K Vamvoukakis,N Makriset al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩ Communication dans un congrès hal-01698971v1
Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs) Konstantinos Zekentes,Edwige Bano 40th International Semiconductor Conference (CAS 2017), Oct 2017, Sinaia, Romania Communication dans un congrès hal-01698966v1
Modelling of 4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes,Konstantin Vassilevski,Antonis Stavrinidis,Konstantin Konstantinidis,Maria Kayambakiet al. 16th International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Catane, Italy. pp.913-916 Communication dans un congrès hal-02025247v1
Salicide-like process for the formation of gate and source contacts in 4H-SiC TI-VJFETS A. Stavrinidis,George Konstantinidis,K. Vamvoukakis,K. Zekentes 11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece Communication dans un congrès hal-02066431v1
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC Sylvie Contreras,Leszek Konczewicz,Pawel Kwasnicki,Roxana Arvinte,Herve Peyreet al. 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩ Communication dans un congrès hal-01936580v1
SiC Nanowire Field-Effect-Transistors Konstantinos Zekentes,Edwige Bano 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct 2016, Rome, Italy Communication dans un congrès hal-01698953v1
Top-down 3C-SiC NWFETs Jihoon Choi,Edwige Bano,Anne Henry,Giovanni Attolini,Konstantinos Zekentes 40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal Communication dans un congrès hal-01698956v1
capacitances in 4H-SiC TI-VJFETs M. Kayambaki,A. Stavrinidis,George Konstantinidis,K. Zekentes 11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece Communication dans un congrès hal-02066426v1
Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs Ji Hoon Choi,Edwige Bano,Anne Henry,Giovanni Attolini,Konstantinos Zekentes 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02008440v1
4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes,Antonis Stavrinidis,George Konstantinidis,Maria Kayambaki,Konstantinos Vamvoukakiset al. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75 Communication dans un congrès hal-02133681v1
Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC Konstantinos Zekentes,Katerina Tsagaraki,Maria Androulidaki,Maria Kayambaki,Antonis Stavrinidiset al. 14th International Conference on Silicon Carbide and Related Materials 2011, Sep 2011, Cleveland, United States. pp.589-592 Communication dans un congrès hal-02025470v1
Schottky barrier 3C-SiC nanowire field effect transistor ECSCRM K. Rogdakis,Edwige Bano,Laurent Montès,Mikhael Bechelany,D. Cornuet al. European Conference on Silicon Carbide and Related, 2010, Oslo, Norway. pp.613-616 Communication dans un congrès hal-00604274v1
Electrical transport properties of catalyst-free grown 3C-SiC nanowires K. Rogdakis,Edwige Bano,L. Montes,K. Zekentes,Mikhael Bechelanyet al. International workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy Communication dans un congrès hal-00603791v1
Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes Aurélie Thuaire,Michel Mermoux,Edwige Bano,Alexandre Crisci,Francis Bailletet al. European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912 Communication dans un congrès hal-00149053v1
Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method Nicolas Camara,K. Zekentes,Edwige Bano,Aurélie Thuaire,A. Lebedev International Conf. on SiC and Related Materials ICSCRM'05, 2006, France. pp.391-394 Communication dans un congrès hal-00146595v1

Brevet (1)

Transistor à effet de champ à jonction et procédé de fabrication associé Olfa Karker,Valérie Stambouli,Edwige Bano,Konstantinos Zekentes France, N° de brevet: Transistor à effet de champ à jonction et procédé de fabrication associé ; PCT/EP2024/075138. CMNE. 2024 Brevet hal-04894005v1

Poster de conférence (8)

Optimizing a-SiC Film Chemical Resistance for Long-Lifetime All-SiC Neural Interfaces Scott Greenhorn,Andrei Uvarov,Edwige Bano,Konstantinos Zekentes,Valerie Stambouli E-MRS Spring, May 2024, Strasbourg, France Poster de conférence hal-04756553v1
Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer Layers Scott Greenhorn,Edwige Bano,Valerie Stambouli,Konstantinos Zekentes Réunion de printemps du club Microcapteurs chimiques (CMC2), Mar 2024, Grenoble, France Poster de conférence hal-04756524v1
Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer Layers Scott Greenhorn,Edwige Bano,Valerie Stambouli,Konstantinos Zekentes Grenoble Neurotech School 2024, Apr 2024, Aussois, France Poster de conférence hal-04756572v1
Comparing 4H-SiC NPN Buffer Layers by Epitaxy and Implantation for Neural Interface Isolation Scott Greenhorn,Konstantinos Zekentes,Edwige Bano,Valerie Stambouli,Gwenaelle Pound-Lanaet al. 20th International Conference on Silicon Carbide and Related Materials (ICSCRM), Sep 2023, Sorrento, Italy Poster de conférence hal-04756495v1
Optimizing Neural Interface Passivation with PECVD a-SiC:H Films Scott Greenhorn,Konstantinos Zekentes,Edwige Bano,Valerie Stambouli,Andrei Uvarov ICSCRM 2022, Sep 2022, Davos, Switzerland. Poster de conférence hal-04726160v1
An open gate 4H-SiC junction field effect transistor for pH sensing Olfa Karker,Konstantinos Zekentes,Nikolaos Makris,Valerie Stambouli,Edwige Bano 19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland Poster de conférence hal-04756631v1
Growth of polycrystalline SiC thin films by chemical vapor deposition for brain implanted electrodes Michalis Gavalas,Frédéric Mercier,Jorge Sanchez Espinoza,Clément Hébert,E. Blanquetet al. ICSCRM2022, Sep 2022, Davos (Suisse), Switzerland Poster de conférence hal-04827865v1
Modelling and development of 4H-SiC nanowire/nanoribbon biosensing FET structures Olfa Karker,Konstantinos Zekentes,Aude Bouchard,Isabelle Gélard,Xavier Mescotet al. European Conference on Silicon Carbide and Related Materials (ECSCRM, Oct 2021, Tours, France Poster de conférence hal-04756677v1

Proceedings/Recueil des communications (1)

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging Maria Kayambaki,Nikolaos Makris,Katerina Tsagaraki,Hervé Peyre,Antonis Stavrinidiset al. 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham (UK), United Kingdom. Materials Science Forum, 963, Trans Tech Publications Inc., pp.328-331, 2019, ⟨10.4028/www.scientific.net/MSF.963.328⟩ Proceedings/Recueil des communications hal-04832035v1

Ouvrages (1)

Field effect transistors based on catalyst-free grown 3C-SiC nanowires. Materials Science Forum 2010, 645-648, 1235-1238 K Rogdakis,E. Bano,Laurent Montès,Mikhael Bechelany,David Cornuet al. 2010 Ouvrages hal-01710866v1