Laurent Auvray

Identifiants chercheurs

IdHAL :

laurent-auvray

ORCID :

0000-0002-6895-0913

IdRef :

070378479

Présentation

I currently work, as an associate professor, in the &quot;Thin Layers&quot; team of the Multimaterials and Interfaces Laboratory (LMI), located in Villeurbanne, France.

My research is mainly focused on the growth and the characterization of epitaxial layers of wide bandgap semi-conductors (SiC and GaN), for applications in microelectronics. We have developed original approaches based on Vapor-Liquid-Solid mechanisms, especially to design peripheral protections of SiC or GaN-based power devices. Currently, we show an interest in new semi-conducting carbides, compatible with the established SiC technology. Recently, we demonstrated for the first time the heteroepitaxy of boron carbide on both polarities of 4H-SiC. I am author or co-author of about 70 scientific publications.

Moreover, I am teaching general and inorganic chemistry, thermochemistry and corrosion.

Publications

Article dans une revue (48)

Boron-SiC diffusion couple : thermodynamics and reactivity at high temperature Y. Benamra,B. Gardiola,F. Robaut,O. Dezellus,F. Cauwetet al. Journal of Phase Equilibria and Diffusion, 2025, ⟨10.1007/s11669-025-01212-4⟩ Article dans une revue hal-05306800v1
Highly Mg-doped GaN dots and films grown by VLS transport at low temperature Gabriel Ferro,Alexandre Jaud,Laurent Auvray,Abdelkarim Kahouli,Tony Abi-Tannouset al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600428⟩ Article dans une revue hal-01615198v1
Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport Gabriel Ferro,Alexandre Jaud,Laurent Auvray,Abdelkarim Kahouli,Tony Abi-Tannouset al. Journal of Crystal Growth, 2017, 467, pp.18 - 28. ⟨10.1016/j.jcrysgro.2017.03.018⟩ Article dans une revue hal-01615173v1
Investigation of the localization phenomenon in quaternary BInGaAs/GaAs for optoelectronic applications Tarek Hidouri,Radhia Hamila,Ibtissem Fraj,Faouzi Saidi,Hassen Maarefet al. Superlattices and Microstructures, 2017, 103, pp.386-394. ⟨10.1016/j.spmi.2016.10.021⟩ Article dans une revue istex hal-02285807v1
LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well T. Hidouri,F. Saidi,H. Maaref,Ph. Rodriguez,Laurent Auvray Optical Materials, 2016, 62, pp.267-272. ⟨10.1016/j.optmat.2016.10.010⟩ Article dans une revue istex hal-02285798v1
Impact of photoluminescence temperature and growth parameter on the exciton localized in B x Ga 1-x As/GaAs epilayers grown by MOCVD Tarek Hidouri,Faouzi Saidi,Hassen Maaref,Philippe Rodriguez,Laurent Auvray Optical Materials, 2016, 60, pp.487-494. ⟨10.1016/j.optmat.2016.08.029⟩ Article dans une revue hal-02285794v1
Structural and optical study of BInGaAs/GaAs quantum wells grown by MOVPE emitting above 1.1eV Radhia Hamila,Faouzi Saidi,Philippe Rodriguez,Laurent Auvray,Hassen Maaref Microelectronic Engineering, 2016, 149, pp.5-8. ⟨10.1016/j.mee.2015.08.013⟩ Article dans une revue hal-02285769v1
Localized state exciton model investigation of B-content effect on optical properties of BGaAs/GaAs epilayers grown by MOCVD Tarek Hidouri,Faouzi Saidi,H Maaref,Philippe Rodriguez,Laurent Auvray Vacuum, 2016 Article dans une revue hal-02285788v1
Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model Soufiene Ilahi,M. Baira,F. Saidi,N. Yacoubi,Laurent Auvrayet al. Journal of Alloys and Compounds, 2013, 581, pp.358-362 Article dans une revue hal-01116060v1
Shift of the gap energy and thermal conductivity in BGaAs/GaAs alloys Soufiene Ilahi,F. Saidi,R. Hamila,N. Yacoubi,H. Maarefet al. Physica B: Condensed Matter, 2013, 421, pp.105-109 Article dans une revue hal-01116051v1
Photothermal deflection spectroscopy (PDS) investigation of optical and thermal properties of BGaAs/GaAs alloys Soufiene Ilahi,F. Saidi,R. Hamila,N. Yacoubi,Laurent Auvrayet al. Current Applied Physics, 2013, 13, pp.610-613 Article dans une revue hal-01116046v1
Investigation of 3C-SiC growth on Si(111) by vapor-liquid-solid transport using a SiGe liquid phase S. Berckmans,Laurent Auvray,G. Ferro,F. Cauwet,V. Soulièreet al. Journal of Crystal Growth, 2012, 354, pp.119-128 Article dans une revue hal-01116034v1
Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method R. Hamila,F. Saidi,H. Maaref,P. Rodriguez,Laurent Auvray Journal of Applied Physics, 2012, 112, pp.063109/1-063109/5 Article dans une revue hal-01116036v1
Buried selective growth of p-doped SiC by VLS epitaxy Davy Carole,Stéphane Berckmans,Arthur Vo-Ha,Mihai Lazar,Dominique Tournieret al. Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩ Article dans une revue hal-00803061v1
Micropipe-induced birefringence in 6H silicon carbide T. Ouisse,D. Chaussende,L. Auvray Journal of Applied Crystallography, 2010, 43, pp.122-133. ⟨10.1107/s0021889809043957⟩ Article dans une revue istex hal-01067400v1
Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD R. Hamila,F. Saidi,P. Rodriguez,Laurent Auvray,Y. Monteilet al. Journal of Alloys and Compounds, 2010, 506, pp.10. ⟨10.1016/j.jallcom.2010.06.169⟩ Article dans une revue istex hal-01116030v1
Structural and optical study of BxInyGa1-x-yAs /GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD F. Saidi,R. Hamila,H. Maaref,P. Rodriguez,Laurent Auvrayet al. Journal of Alloys and Compounds, 2010, 491, pp.45 Article dans une revue hal-01116023v1
Clustering effects in optical properties of BGaAs/GaAs epilayers R. Hamila,F. Saidi,A. Fouzri,Laurent Auvray,Y. Monteilet al. Journal of Luminescence, 2009, 129, pp.1010-1014 Article dans une revue hal-01118207v1
Study by AES and EELS spectroscopies of antimony and phosphorous evaporated on massive indium and on cleaned InP Zoubida Lounis,M. Bouslama,N. Berrouachedi,C. Jardin,Laurent Auvrayet al. Vacuum, 2008, 82, pp.529-534 Article dans une revue hal-01118194v1
Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by MOVPE P. Rodriguez,Laurent Auvray,A. Favier,J. Dazord,Y. Monteil Thin Solid Films, 2008, 516, pp.8424-8430 Article dans une revue hal-01118198v1
Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE P. Rodriguez,Laurent Auvray,H. Dumont,J. Dazord,Y. Monteil Journal of Crystal Growth, 2007, 298, pp.81-84 Article dans une revue hal-01118219v1
The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation. A Nouri,Zoubida Lounis,A. Ouerdane,M. Ghaffour,M. Bouadiet al. Vacuum, 2007, 81, pp.979-984 Article dans une revue hal-01118182v1
Investigation of both interface states spectrum and deep oxide states from differential isothermal transient spectroscopy P. Muret,Laurent Auvray,O. Salicio,C. Dubourdieu Materials Science in Semiconductor Processing, 2006, 9 (6), pp.885-888. ⟨10.1016/j.mssp.2006.10.042⟩ Article dans une revue istex hal-05313966v1
Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding Guy Chichignoud,Laurent Auvray,Elisabeth Blanquet,Mikhail Anikin,Etienne Pernotet al. Materials Science Forum, 2006, 527-529, pp. 71-74. ⟨10.4028/www.scientific.net/MSF.527-529.71⟩ Article dans une revue hal-00417197v1
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies C. Dubourdieu,Hervé Roussel,Carmen Jiménez,M. Audier,J. P. Senateuret al. Materials Science and Engineering: B, 2005, B118 (1-3), pp.105-111. ⟨10.1016/j.mseb.2004.12.019⟩ Article dans une revue hal-00012501v1
Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers Peter J. Wellmann,Ralf Müller,Michel Pons,Aurélie Thuaire,Alexandre Crisciet al. Materials Science Forum, 2005, 483?485, pp. 393-396. ⟨10.4028/0-87849-963-6.393⟩ Article dans une revue hal-00334316v1
Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications Didier Chaussende,Magali Ucar,Laurent Auvray,Francis Baillet,Michel Ponset al. Crystal Growth & Design, 2005, 5 (4), pp.1539-1544. ⟨10.1021/cg050009i⟩ Article dans une revue hal-00118809v1
Optical mapping of aluminum doped p-type SiC wafers Peter J. Wellmann,T. Straubinger,U. Künecke,Ralf Müller,S. Sakweet al. Physica Status Solidi A (applications and materials science), 2005, 202 (4), pp. 598-601. ⟨10.1002/pssa.200460436⟩ Article dans une revue istex hal-00386442v1
Electrical characterization of SrTiO3 thin films deposited on Si(001) substrate by liquid injection MOCVD J. Legrand,S. Lhostis,Y. Chang,L. Militaru,C. Lamardet al. Microelectronic Engineering, 2004, 72 (1-4), pp.310-314. ⟨10.1016/j.mee.2004.01.009⟩ Article dans une revue istex hal-05313915v1
Optical investigation of GaAs1-xNx/GaAs heterostructure properties F. Saidi,F. Hassen,H. Maaref,Laurent Auvray,H. Dumontet al. physica status solidi (b), 2004, 241, pp.428-433 Article dans une revue hal-01118237v1
Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine H. Dumont,Laurent Auvray,J. Dazord,Y. Monteil,O. Martyet al. Thin Solid Films, 2004, 458, pp.154-160 Article dans une revue hal-01118229v1
Electrical characterisation of SrTiO3 thin films deposited on Si(100) substrate by liquid injection MOCVD J. Legrand,S. Lhostis,Y. Chang,L. Militaru,C. Lamardet al. Microelectronic Engineering, 2004, 72, pp.310 Article dans une revue hal-00135402v1
Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method Didier Chaussende,Carole Balloud,Laurent Auvray,Francis Baillet,Marcin Zielinskiet al. Materials Science Forum, 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩ Article dans une revue hal-00417942v1
Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method Laurent Auvray,Didier Chaussende,Francis Baillet,Ludovic Charpentier,Michel Ponset al. Materials Science Forum, 2004, 457-460, pp.135-138. ⟨10.4028/www.scientific.net/MSF.457-460.135⟩ Article dans une revue hal-05313999v1
Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs1-xNx/GaAs H. Dumont,Laurent Auvray,Y. Monteil,O. Marty,G. Patriarche Physica Status Solidi C: Current Topics in Solid State Physics, 2003, 0, pp.2749 Article dans une revue hal-01118294v1
Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures H. Dumont,Laurent Auvray,Y. Monteil,F. Saidi,F. Hassenet al. Optical Materials, 2003, 24, pp.303-308 Article dans une revue hal-01118285v1
Nitrogen enrichment at the GaAs1-xNx/GaAs(001) interface : microstructure and optical properties H. Dumont,Laurent Auvray,J. Dazord,Y. Monteil,C. Bondouxet al. Journal of Crystal Growth, 2003, 248, pp.441-445 Article dans une revue hal-01118282v1
Optical signature of atomic ordering in In0,53Ga0,47As/InP : photoluminescence properties and IR response H. Dumont,Laurent Auvray,Y. Monteil Optical Materials, 2003, 24, pp.309 Article dans une revue hal-01118288v1
Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD F. Saidi,F. Hassen,H. Maaref,Laurent Auvray,H. Dumontet al. Materials Science and Engineering: C, 2002, 21, pp.245-249 Article dans une revue hal-01118277v1
Microscopic structure and optical properties of GaAs1-xNx/GaAs (001) interface grown by metalorganic vapor phase epitaxy H. Dumont,Laurent Auvray,Y. Monteil,C. Bondoux,L. Largeauet al. Applied Physics Letters, 2002, 80, pp.2460-2462 Article dans une revue hal-01118246v1
Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE H. Dumont,Laurent Auvray,Y. Monteil,Jean Bouix Materials Science and Engineering: B, 2001, 84, pp.258-264 Article dans une revue hal-01118251v1
Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP (001) step-bunched surfaces V. Soulière,H. Dumont,Laurent Auvray,Y. Monteil Journal of Crystal Growth, 2001, 226, pp.31-38 Article dans une revue hal-01118249v1
AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE Laurent Auvray,H. Dumont,J. Dazord,Y. Monteil,Jean Bouixet al. Journal of Crystal Growth, 2000, 221, pp.475-480 Article dans une revue hal-01118274v1
MOVPE growth of GaAsN : surface study by AFM and optical properties Laurent Auvray,H. Dumont,J. Dazord,Y. Monteil,Jean Bouixet al. Materials Science in Semiconductor Processing, 2000, 3, pp.505-509 Article dans une revue hal-01118272v1
Surface morphology, electrical and optical properties of InGaAs/InP grown by MOVPE using trimethylarsine and arsine H. Dumont,Laurent Auvray,J. Dazord,Y. Monteil,Jean Bouixet al. Journal of Crystal Growth, 1999, 204, pp.1-9 Article dans une revue hal-01118258v1
Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates H. Dumont,Laurent Auvray,J. Dazord,V. Soulière,Y. Monteil Journal of Applied Physics, 1999, 85, pp.7185-7190 Article dans une revue hal-01118261v1
Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates H. Dumont,Laurent Auvray,A. Ougazzaden,V. Soulière,J. Dazordet al. Journal of Crystal Growth, 1999, 197, pp.755-761 Article dans une revue hal-01118266v1
Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine H. Dumont,Laurent Auvray,J. Dazord,Y. Monteil,Jean Bouixet al. Applied Surface Science, 1999, 150, pp.161-170 Article dans une revue hal-01118255v1

Communication dans un congrès (11)

Effet de la polarité du substrat 4H-SiC sur la croissance hétéroépitaxiale du carbure de bore BxC par CVD Gabriel Ferro,Laurent Auvray,François Cauwet,Yamina Benamra Conférence MATEPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France Communication dans un congrès hal-04884322v1
Réactivité et couple de diffusion dans le système B-C-Si à haute température Yamina Benamra,J. Andrieux,Bruno Gardiola,Laurent Auvray,Gabriel Ferroet al. MATERIAUX 2022, Oct 2022, Lille, France Communication dans un congrès hal-04753534v1
Epitaxial Growth of Boron Carbide on 4H-SiC Yamina Benamra,Laurent Auvray,J. Andrieux,François Cauwet,Maria-Paz Alegreet al. International conference on silicon carbide and related materials 2022, Sep 2022, DAVOS, Switzerland Communication dans un congrès hal-04877889v1
Buried selective growth of p-doped SiC by VLS epitaxy Davy Carole,Stéphane Berckmans,Arthur Vo-Ha,Mihai Lazar,Dominique Tournieret al. CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747294v1
Epitaxial growth of 3C-SiC onto silicon substrate by VLS transport using CVD-grown 3C-SiC seeding layer S. Berckmans,Laurent Auvray,Gabriel Ferro,F. Cauwet,V. Souliereet al. HeteroSiC–WASMPE, Jun 2011, Tours, France Communication dans un congrès hal-01116084v1
Investigation of the growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) transport S. Berckmans,Laurent Auvray,G. Ferro,F. Cauwet,D. Caroleet al. ECSCRM 2010, Aug 2010, Oslo, Norway. pp.99-102 Communication dans un congrès hal-01116070v1
On the characterization of boron in BGaAs nano-films using IBA technique S. Abboudy,Maher Soueidan,Q. Al Assad,Laurent Auvray,Gabriel Ferroet al. Mediterranean Conference on Innovative Materials and Applications (CIMA), Mar 2011, Beyrouth, Lebanon. pp.314-317, ⟨10.4028/www.scientific.net/AMR.324.314⟩ Communication dans un congrès hal-01116081v1
The perovskite SrTiO3 on Si/SiO2 by liquid injection MOCVD C. Dubourdieu,O. Salicio,S. Lhostis,L. Auvray,Y. Rozieret al. ECS transactions, 2009, France. pp.669-684 Communication dans un congrès hal-00604265v1
Dislocation-Induced Birefringence in Silicon Carbide Thierry Ouisse,Didier Chaussende,Laurent Auvray,Etienne Pernot,Roland Madar 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩ Communication dans un congrès hal-02890909v1
Nitrogen incorporation and growth kinetics of GaAsN/GaAs epilayers grown by MOVPE Laurent Auvray,H. Dumont,J. Dazord,Y. Monteil,Jean Bouix MRS Spring Meeting, Apr 2000, San Francisco, United States. pp.189 Communication dans un congrès hal-01118308v1
MOVPE strip-like self-organization of InAs grown on InP vicinal surfaces Laurent Auvray,V. Soulière,H. Dumont,J. Dazord,Y. Monteilet al. MRS Spring Meeting, Apr 2000, San Francisco, United States. pp.59 Communication dans un congrès hal-01118304v1

Poster de conférence (1)

Polarity Effect on the Heteroepitaxial Growth of BxС On 4H-SiС by CVD François Cauwet,Yamina Benamra,Laurent Auvray,J. Andrieux,Gabriel Ferro International conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy Poster de conférence hal-04872652v1

Proceedings/Recueil des communications (1)

Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer Stéphane Berckmans,Laurent Auvray,Gabriel Ferro,François Cauwet,Véronique Soulièreet al. European Conference on Silicon Carbide and Related Materials, Aug 2010, Oslo (Norway), Norway. Materials Science Forum, 711, pp.35-39, 2012, ⟨10.4028/www.scientific.net/MSF.711.35⟩ Proceedings/Recueil des communications hal-05314242v1