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Laurent PEDESSEAU
7
Documents
Identifiants chercheurs
- laurent-pedesseau
- 0000-0001-9414-8644
- IdRef : 069404003
Présentation
Education:
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**2019:** Habilitation Degree in Physics, Université Rennes (France)
**2004:** Ph.D in Physics, Université Paul Sabatier at Toulouse (France); Advisor: Prof. David Mainprice
About:
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Dr Pedesseau is an Associate Professor at the INSA Rennes (FOTON Institute - CNRS) whose work is aimed at the understanding of physical processes in the III-V semiconductor nanostructures for silicon photonics, the hybrid perovskites and novel materials for photovoltaics, and optoelectronic device simulations for optical-communications. His recent scientific interests include: 1) polar surface and interface energies of semiconductors; 2) first principles simulation (including the spin-orbit effect) of mechanical stability, electronic, and optical properties of 3D and 2D semiconductors; 3) electronic structure theory beyond the DFT such as hybrid functionals (HSE), many-body corrections GW, and DFT-1/2; 4) HPC technology for exotic and highly demanding simulations in terms of the large memory footprint and extensive CPUs communications (thousands).
Employment:
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**2011-present:** Associate Professor, Physics Department, INSA of Rennes, France
**2008-2011:** Postdoctoral fellow, ICG and LCC, University of Montpellier, France
**2006-2008:** Postdoctoral fellow, Physics Department, INSA of Rennes, France
**2004-2006:** Postdoctoral fellow, Chemistry department, University College London, London, UK
**2001-2004:** Ph.D. fellow, University Paul Sabatier, Toulouse, France
Research interests:
======================
Material science, Semiconductor physics, Quantum nanostructures, Solar Energy, Advanced Materials
Theoretical physics, Phase transitions, Dielectric and piezoelectric properties
Density functional theory, k.p method, Finite element method
Administrative responsibilities:
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**- Since 2016:** Leader of workgroup 1 (Nanostructure) for the COST Action MP1406 - MultiscaleSolar
**- Since 2016:** In charge of International Affairs for the Materials science dept. at the INSA Rennes.
Selected publications:
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\- Structural and thermodynamic limits of layer thickness in 2D halide perovskites. ***PNAS***, 116, 58, **2019**
\- Concept of Lattice mismatch an emergence of surface states in 2D hybrid perovskite QW. ***Nano Lett.***, 18, 9, **2018**
\- Universal description of III-V/Si epitaxial growth processes. ***Phys. Rev. Materials***, 2, 060401(R), **2018**
\- A stress-free and textured GaP template on Si for sol. wat. split.. ***Ad. Funct. Mat.***, 28, 1801585, **2018**
\- Scaling law for excitons in 2D perovskite quantum wells. ***Nat. Com.***, 9, 2254, **2018**
\- Anharmonicity and Disorder in the Black Phases of etc. ***ACS Nano***, 12, 3477, **2018**
\- Composite Nature of Layered Hybrid Perovskites: etc. ***ACS Nano***, 12, 3321, **2018**
\- Hybrid Dion–Jacobson 2D Lead Iodide Perovskites. ***JACS***, 140, 3775, **2018**
\- Decreasing the electronic confinement in layered perovskites through intercalation. ***Chem. Sci.***, **2017**
\- Extremely efficient internal exciton dissociation through edge states in 2D HOP. ***Science***, 355, **2017**
\- Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors. ***ACS Nano***, 10, **2016**
\- Rashba and Dresselhaus Effects in HOP: From Basics to Devices. ***ACS Nano***, 9, 11557, **2015**
\- First-principles study of a NBS glass-former. I &II. ***Phys. Rev. B*** 91, 134201 & 134202, **2015**
\- Analysis of Multivalley and Multibandgap Absorption etc. ***J. Phys. Chem. C*** 118, 11566, **2014**
\- DFT and k·p modelling of the phase transitions of lead HOP etc. ***RRL*** 8, 31, **2014**
\- Importance of soc in hop for photovoltaic applications. ***J. Phys. Chem. Lett.*** 4, 2999, **2013**
\- Electronic model for self-assembled hybrid perovskite etc. ***Phys. Rev. B*** 86, 205301, **2012**
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Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dotsApplied Physics Letters, 2014, 104 (1), pp.011908. ⟨10.1063/1.4861471⟩
Article dans une revue
hal-00941161v1
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Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy
Communication dans un congrès
hal-01147481v1
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
hal-01147506v1
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Using high pressure to unravel the nature of optical transitions in (In,Ga)As/GaP quantum dots16th High Pressure in Semiconductor Physics conference (HPSP-16), Aug 2014, Mexico, Mexico
Communication dans un congrès
hal-01114998v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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Carrier capture and relaxation in GaAsPN/GaP quantum wells32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014
Poster de conférence
hal-01115282v1
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Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014
Poster de conférence
hal-01115307v1
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