Lionel Trojman Directeur de la Recherche à l'Isep

Identifiants chercheurs

IdHAL :

lionel-trojman

ORCID :

0000-0003-2316-4959

IdRef :

241071941

VIAF :

52157581818033782603

Publications

Communication dans un congrès (67)

Design Methodology for Power System-on-Chip Integration Based on E-Mode p-GaN HEMTs Nataly Aracely Pozo Viera,Luis Miguel Prócel,Lionel Trojman IEEE NEWCASS, Jun 2025, Paris, France Communication dans un congrès hal-05505482v1
Enhancing Efficiency and Stability in 2D/3D Hybrid Perovskite Solar Cells: A Simulation Study of N-I-P and P-I-N Architectures with Different Charge Transport Layers Lilian David-Egbunu,Ziyanda Zamaswazi,Wisly Fidel,Jacques Botsoa,Nicole Doumitet al. JNPV 2025, Nov 2025, Strasbourg, France Communication dans un congrès hal-05503816v1
Une nouvelle approche de la stabilité des pérovskites pour une technologie photovoltaïque adaptée aux besoins énergétiques des objets numériques Lilian David-Egbunu,Nicole Doumit,Esidor Ntsoenzok,Lionel Trojman JPCNFM 2025, Dec 2025, Saint-Malo, France Communication dans un congrès hal-05503659v1
Fabrication de circuits intégrés durant des programmes doctoraux en technologie GaN et en 65nm : une accélération d’innovations Lionel Trojman,Eduardo Holguin,Nataly Aracely Pozo Viera,Kevin Vicuña,Luis Miguel Prócelet al. JPCNFM 2025, Dec 2025, Saint-Malo, France Communication dans un congrès hal-05503643v1
Compressive Strain in FAPbI? to Supress Non-radiative Recombination: Toward a 2D/3D System Perovskite for High Efficiency Solar Cells Lilian David-Egbunu,Ziyanda Zamaswazi,Wisly Fidel,Jacques Botsoa,Nicole Doumitet al. E-MRS Fall meeting 2025, Sep 2025, Varsovie, Poland Communication dans un congrès hal-05503844v1
Advanced Physics-Based Modeling of TFETs: A Comprehensive Geometric and Material Perspective Marco Villegas,Luis Miguel Prócel,Silvana Guitarra,Paul Procel,Lionel Trojman INFOS 2025, Jun 2025, Granada, Spain Communication dans un congrès hal-05504913v1
TERO-PUF optimisé pour l'étalonnage sur Intel MAX-10 pour des PUF faibles et robustes Kevin Vicuña,K. Foglia,Frédéric Amiel,Lionel Trojman,Sreejith Babu JPCNFM, Dec 2025, Saint-Malo, France Communication dans un congrès hal-05503630v1
Ultra-Fast and High-Reliability VCMA-MTJ Based TCAM for Precision Search Operations Kevin Vicuña,Stéphane Koffi,Laurent Raymond,Lionel Trojman IEEE 16th Latin America Symposium on Circuits and Systems (LASCAS 2025), Feb 2025, Bento Gonçalves, Brazil. pp.1-5, ⟨10.1109/LASCAS64004.2025.10966309⟩ Communication dans un congrès hal-05055009v1
Design of a Gate Driver Based-on E-mode p-GaN HEMTs Handling 650V/10A GaN Power Device Nataly Pozo,Luis-Miguel Prócel,Lionel Trojman 2024 22nd IEEE Interregional NEWCAS Conference (NEWCAS), IEEE, Jun 2024, Sherbroock, Canada. pp.333-337, ⟨10.1109/NewCAS58973.2024.10666324⟩ Communication dans un congrès hal-05187195v1
Analysis of high resistive conduction mechanism in HfO 2 -based ReRAM devices Silvana Guitarra,Lionel Trojman,Laurent Raymond 2024 IEEE Latin American Electron Devices Conference (LAEDC), May 2024, Guatemala City, Guatemala. pp.1-4, ⟨10.1109/LAEDC61552.2024.10555862⟩ Communication dans un congrès hal-04917650v1
All-GaN Integrated Overcurrent Protection Circuit Using Only Enhancement-mode p-GaN Devices Nataly Pozo,Luis-Miguel Prócel,Lionel Trojman 2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI), Sep 2024, Joao Pessoa, Brazil. pp.1-5, ⟨10.1109/SBCCI62366.2024.10703983⟩ Communication dans un congrès hal-05187203v1
Effects of the compliance current in the electroforming process of HfO 2 -based ReRAM devices Silvana Guitarra,Lionel Trojman,Laurent Raymond 2023 IEEE Latin American Electron Devices Conference (LAEDC), Jul 2023, Puebla, Mexico. pp.1-4, ⟨10.1109/LAEDC58183.2023.10209142⟩ Communication dans un congrès hal-04186168v1
Conception de cellules nano-CMOS -Perspectives à dix ans Etienne Sicard,Sonia Ben Dhia,Lionel Trojman 7èmes Journées Pédagogiques - JPCNFM 2023, INSA Toulouse, Nov 2023, Toulouse, France Communication dans un congrès hal-04502940v1
Analysis and Design of a Self-Powered VEH System Based on ULP Comparator Eduardo Holguin,Luis Miguel Prócel,Andrei Vladimirescu,Lionel Trojman,Alexis Brenes 2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS), Lionel Trojman; Luis-Miguel Procel, Feb 2023, Quito, Ecuador. ⟨10.1109/LASCAS56464.2023.10108276⟩ Communication dans un congrès hal-04186120v1
Effects of the compliance current in the electroforming process of HfO 2 -based ReRAM devices Silvana Guitarra,Lionel Trojman,Laurent Raymond 2023 IEEE Latin American Electron Devices Conference (LAEDC), Jul 2023, Puebla, France. pp.1-4, ⟨10.1109/LAEDC58183.2023.10209142⟩ Communication dans un congrès hal-04396660v1
Enhancement-mode p-GaN Comparators for power applications Nataly Pozo,Luis-Miguel Prócel,Lionel Trojman 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Jun 2023, Valencia, Spain. pp.197-200, ⟨10.1109/PRIME58259.2023.10161779⟩ Communication dans un congrès hal-04186145v1
Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy Silvana Guitarra,Lionel Trojman,Laurent Raymond,Martin Gavilanez Latin American Electron Devices Conference (LAEDC), Jul 2022, Cancun, Mexico. ⟨10.1109/LAEDC54796.2022.9908218⟩ Communication dans un congrès hal-04092434v1
Energy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells Ariana Musello,Santiago Perez,Marco Villegas,Luis Miguel Procel,Ramiro Tacoet al. IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, Chile. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789086⟩ Communication dans un congrès hal-03812310v1
Voltage and Technology Scaling of DMTJ-based STT-MRAMs for Energy-Efficient Embedded Memories Esteban Garzon,Ramiro Taco,Luis Miguel Procel,Lionel Trojman,Marco Lanuzza IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, France. pp.01-04, ⟨10.1109/LASCAS53948.2022.9789054⟩ Communication dans un congrès hal-03812303v1
Voltage-to-Voltage Sigmoid Neuron Activation Function Design for Artificial Neural Networks Tatiana Moposita,Lionel Trojman,Felice Crupi,Marco Lanuzza,Andrei Vladimirescu IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, France. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789075⟩ Communication dans un congrès hal-03812298v1
DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems Kevin Vicuna,Luis-Miguel Procel,Lionel Trojman,Ramiro Taco 2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS), Mar 2022, Puerto Varas, Chile. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789065⟩ Communication dans un congrès hal-03812290v1
Design and optimization of a Vibrational MEMS-Based Energy Harvester Eduardo Holguin,Lionel Trojman,Luis Miguel Procel,Alexis Brenes,Andrei Vladimirescu 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Jun 2022, Villasimius, France. pp.209-212, ⟨10.1109/PRIME55000.2022.9816839⟩ Communication dans un congrès hal-03812325v1
Low-Cost Smart Living Environment Monitoring Systems from a Metrological Point of View Juan-Jose Jimenez,Domenico Luca Carni,Lionel Trojman,Luis-Miguel Procel,Francesco Lamonaca IEEE International Workshop on Metrology for Living Environment (MetroLivEn) 2022, May 2022, Cosenza, Italy. pp.174-179, ⟨10.1109/MetroLivEnv54405.2022.9826978⟩ Communication dans un congrès hal-03812317v1
Pédagogie hybride pour l'apprentissage de la conception d'un microprocesseur simplifié niveau master avec µWind Lionel Trojman,F. V. Viteri,E. Sicard JPCNFM 2021 :16e journées pédagogiques du CNFM (Coordination Nationale pour la Formation en Micro-électronique et en nanotechnologies), Oct 2021, St Malo, France. ⟨10.1051/j3ea/20221005⟩ Communication dans un congrès hal-03810252v1
Implementation of 32nm MD5 Crypto-Processor using Different Topographical Synthesis Techniques and Comparison with 500nm Node Juan-Jose Jimenez,Andre Borja,Laetitia Silly,Luis-Miguel Procel,Lionel Trojmanet al. 2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM53643.2021.9590739⟩ Communication dans un congrès hal-03575909v1
Harvesting performances of a gap-closing MEMS energy harvester with squeeze-film damping Eduardo Holguin,Alexis Brenes,Lionel Trojman,Andrei Vladimirescu 10th National Days on Energy Harvesting and Storage (JNRSE), Jun 2021, Grenoble, France Communication dans un congrès hal-03345354v1
Assessment of 10 nm Tunnel- FETs and FinFETs transistors for ultra-low voltage and high-speed digital circuits Mateo Rendon,Christian Cao,Kevin Landazuri,Luis Miguel Prócel,Lionel Trojmanet al. 2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-6, ⟨10.1109/ETCM53643.2021.9590651⟩ Communication dans un congrès hal-03575604v1
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric Eliana Acurio,Lionel Trojman,Brice de Jaeger,Benoit Bakeroot,Stefaan Decoutere IEEE International Reliability Physics Symposium (IRPS 2021), Mar 2021, Monterey (virtual conference), United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405163⟩ Communication dans un congrès hal-03218246v1
A 180 nm Low-Cost Operational Amplifier for IoT Applications Kevin Vicuna,Cristhopher Mosquera,Mateo Rendon,Ariana Musello,Marco Lanuzzaet al. 2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-6, ⟨10.1109/ETCM53643.2021.9590655⟩ Communication dans un congrès hal-03575586v1
High-Speed and Low-Energy Dual-Mode Logic based Single-Clock-Cycle Binary Comparator Ricardo Escobar,Luis Miguel Procel,Lionel Trojman,Marco Lanuzza,Ramiro Taco IEEE LASCAS 2021, Feb 2021, Arequipe, Peru. pp.1-4, ⟨10.1109/LASCAS51355.2021.9459151⟩ Communication dans un congrès hal-03107004v1
Electrical Model and Performance of an Embedded MEMS Energy Harvester Eduardo Holguin,Alexis Brenes,Lionel Trojman,Andrei Vladimirescu International Conference on Analog VLSI Circuits (AVIC) 2021, Oct 2021, Bordeaux, France Communication dans un congrès hal-03346368v1
RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies Lionel Trojman,David Rivadeneira,Marco Villegas,Eliana Acurio,Marco Lanuzzaet al. IEEE LASCAS 2021, Feb 2021, Arequipe (virtual), Peru. pp.1-4, ⟨10.1109/LASCAS51355.2021.9459129⟩ Communication dans un congrès hal-03107008v1
Fabrication of Nanopores Using the Controlled Dielectric Breakdown Technique Nagel Amaguayo,Ariana Musello,Pablo Lopez,Lionel Trojman,Luis Miguel Prócelet al. 2021 IEEE Latin America Electron Devices Conference (LAEDC), Apr 2021, Mexico, France. ⟨10.1109/LAEDC51812.2021.9437914⟩ Communication dans un congrès hal-03238942v1
Reconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications Esteban Garzon,Benjamin Zambrano,Tatiana Moposita,Ramiro Taco,Luis-Miguel Procelet al. 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2020, San Jose, Costa Rica. pp.1-4, ⟨10.1109/LASCAS45839.2020.9069027⟩ Communication dans un congrès hal-02951687v1
Effects of the technology scaling down to 28nm on Ultra-Low Voltage and Power OTA performance using TCAD simulations Lionel Trojman,Juan Orozco,Mateo Bonilla,Mateo Valencia,Luis-Miguel Procelet al. IEEE ANDESCON 2020, 2020, Guayaquil, Ecuador Communication dans un congrès hal-02955295v1
720p-HD Grayscale and Color Images Shape Recognition System Implementation on a FPGA Platform with a 1080pFull-HD HDMI Interface using a Hu Moments Algorithm Andre Borja,Lionel Trojman,Luis-Miguel Procel,Ramiro Taco IEEE ANDESCON 2020, 2020, Guayaquil, Ecuador Communication dans un congrès hal-02955281v1
Optimization of Active Voltage Rectifier / Doubler Designed in 90 nm Technology David Rivadeneira,Marco Villegas,Luis Miguel Procel,Lionel Trojman 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2020, San Jose, Costa Rica. pp.1-4, ⟨10.1109/LASCAS45839.2020.9069013⟩ Communication dans un congrès hal-02951685v1
Reconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications Eliana Acurio,Felice Crupi,Brice de Jaeger,Stefaan Decoutere,Esteban Garzonet al. 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2020, San Jose, France. pp.1-4, ⟨10.1109/LASCAS45839.2020.9069027⟩ Communication dans un congrès hal-02597587v1
Binarization Methodology Applied to Digital Images of Petroglyphs from Cueva del Diablo of Manabí Luis-Miguel Procel,Michelle Aviles,Lionel Trojman,Florencio Delgado,Josefina Vasquez 2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014866⟩ Communication dans un congrès hal-02951695v1
Resistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters Silvana Guitarra,Lionel Trojman,Laurent Raymond 2019 Latin American Electron Devices Conference (LAEDC), Feb 2019, Armenia, Colombia. pp.1-4, ⟨10.1109/LAED.2019.8714728⟩ Communication dans un congrès hal-02951702v1
Power and Area Reduction of MD5 based on Cryptoprocessor Using novel approach of Internal Counters on the Finite State Machine Juan-José Jiménez,Lionel Trojman,Luis-Miguel Procel 2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-4, ⟨10.1109/ETCM48019.2019.9014878⟩ Communication dans un congrès hal-02951693v1
TFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range Romain Liautard,Lionel Trojman,Adriana Arevalo,Luis-Miguel Procel 2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014896⟩ Communication dans un congrès hal-02951697v1
Implementation and Comparison of a Fast Shape Recognition Algorithm using Different FPGA Platforms Andre Borja,Guillaume Varengues,Luis-Miguel Procel,Lionel Trojman,German Arevaloet al. 2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014902⟩ Communication dans un congrès hal-02951692v1
Exploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs Esteban Garzon,Raffaele de Rose,Felice Crupi,Lionel Trojman,Giovanni Finocchioet al. 2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), Jul 2019, Lausanne, Switzerland. pp.85-88, ⟨10.1109/SMACD.2019.8795223⟩ Communication dans un congrès hal-02953651v1
New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies Luis-Miguel Procel Instituto de Micro/Nanoelectrónica Adriana Arevalo,Romain Liautard,Daniel Romero,Lionel Trojman,Luis-Miguel Procel SBCCI, Aug 2019, Sao Paolo, Brazil. pp.85-88, ⟨10.1145/3338852.3339871⟩ Communication dans un congrès hal-02951701v1
Model for resistive switching in bipolar Hafnium-based memories Silvana Guitarra,Laurent Raymond,Lionel Trojman WOMEN IN PHYSICS: 6th IUPAP International Conference on Women in Physics, 2019, Birmingham, United Kingdom. pp.060005, ⟨10.1063/1.5110123⟩ Communication dans un congrès hal-02953546v1
Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters L.-M. Procel,J. Paredes,Lionel Trojman 2019 Latin American Electron Devices Conference (LAEDC), Feb 2019, Armenia, Colombia. pp.1-4, ⟨10.1109/LAED.2019.8714738⟩ Communication dans un congrès hal-02951704v1
Optical Feedback Interferometry imaging sensor for micrometric flow-patterns using continuous scanning D. Flores,Adam Quotb,Clément Tronche,Francis Jayat,Lionel Trojmanet al. 2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956790⟩ Communication dans un congrès hal-02951698v1
Microprocessor Design with a Direct Bluetooth Connection in 45 nm Technology Using Microwind Esteban Garzon,Felix Chavez,Diego Jaramillo,Luis Sanchez,Sofia Laraet al. 2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2019, Armenia, Colombia. pp.105-108, ⟨10.1109/LASCAS.2019.8667540⟩ Communication dans un congrès hal-02951706v1
On the parameter extraction of short channel UTBB-FDSOI FET’s with high-κ metal gate and TCAD modelling Lionel Trojman,Andres Vaca,Luis Miguel Procel 2018 IEEE XXV International Conference on Electronics, Electrical Engineering and Computing (INTERCON), Aug 2018, Lima, Peru. pp.1-4, ⟨10.1109/INTERCON.2018.8526445⟩ Communication dans un congrès hal-02951713v1
Reliability in GaN-based devices for power applications Eliana Acurio,Lionel Trojman,Felice Crupi,Ferdinando Iucolano,Nicolo Ronchiet al. 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, France. pp.1-6, ⟨10.1109/ETCM.2018.8580263⟩ Communication dans un congrès hal-02951709v1
Capacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique Diego Benalcazar,Esteban Garzon,Lionel Trojman 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM.2018.8580289⟩ Communication dans un congrès hal-02951708v1
A phenomenological model of the resistive switching for Hf-based ReRAM devices Silvana Guitarra,Lionel Trojman,Laurent Raymond 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM.2018.8580284⟩ Communication dans un congrès hal-02951710v1
Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process Lionel Trojman,Diego Benalcazar,Luis Procel,Guillaume Jobard 2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC), Nov 2017, Ixtapa, Mexico. pp.1-6, ⟨10.1109/ROPEC.2017.8261677⟩ Communication dans un congrès hal-02952130v1
Implementation and optimization of the algorithm of automatic color enhancement in digital images Juan Sebastian Romero,Luis Miguel Procel,Lionel Trojman,Damien Verdier 2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC), Nov 2017, Ixtapa, Mexico. pp.1-6, ⟨10.1109/ROPEC.2017.8261651⟩ Communication dans un congrès hal-02952122v1
Temperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective L.M. Procel,Lionel Trojman,F. Crupi 2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-4, ⟨10.1109/ANDESCON.2016.7836241⟩ Communication dans un congrès hal-02952166v1
Remote control of VNA and parameter analyzer for RFCV measurements using Python Esteban Garzon,Fernando M. Sanchez,Luis-Miguel Procel,Lionel Trojman 2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-4, ⟨10.1109/ANDESCON.2016.7836225⟩ Communication dans un congrès hal-02952164v1
Statistical study of SiON short MOSFET under Channel Hot Carrier stress Lionel Trojman,Juan Acosta,Mario Ortega,Luis-Miguel Procel 2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-5, ⟨10.1109/ANDESCON.2016.7836238⟩ Communication dans un congrès hal-02952151v1
Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs J. J. Franco,B. Kaczer,S. Mukhopadhyay,P. Duhan,P. Weckxet al. 2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.15.3.1-15.3.4, ⟨10.1109/IEDM.2016.7838422⟩ Communication dans un congrès hal-02952143v1
Origins and implications of increased channel hot carrier variability in nFinFETs B. Kaczer,J. J. Franco,M. Cho,T. Grasser,Ph. Rousselet al. 2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.3B.5.1-3B.5.6, ⟨10.1109/IRPS.2015.7112706⟩ Communication dans un congrès hal-02952187v1
On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics L.-A. Ragnarsson,J. Mitard,T. Kauerauf,A. de Keersgieter,T. Schramet al. 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2011, Hsinchu, Japan. pp.1-2, ⟨10.1109/VTSA.2011.5872255⟩ Communication dans un congrès hal-02953487v1
Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge L. Pantisano,Lionel Trojman,J. Mitard,B. Dejaeger,S. Severiet al. 2008 Symposium on VLSI Technology, Jun 2008, Honolulu, United States. pp.52-53, ⟨10.1109/VLSIT.2008.4588560⟩ Communication dans un congrès hal-02952216v1
Line width dependent mobility in high-k a comparative performance study between FUSI and TiN L. Pantisano,Lionel Trojman,S. Severi,E.San Andres,C. Kerneret al. 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Apr 2007, Hsinchu, Japan. pp.1-2, ⟨10.1109/VTSA.2007.378909⟩ Communication dans un congrès hal-02952258v1
Advanced electrical characterization toward (sub) 1nm EOT HfSiON ¿ hole trapping in PFET and L-dependent effects M.B. Zahid,L. Pantisano,R. Degraeve,M. Aoulaiche,Lionel Trojmanet al. 2007 IEEE Symposium on VLSI Technology, Jun 2007, Kyoto, Japan. pp.32-33, ⟨10.1109/VLSIT.2007.4339715⟩ Communication dans un congrès hal-02952244v1
Novel, Effective and Cost-Efficient Method of Introducing Fluorine into Metal/Hf-based Gate Stack in MuGFET and Planar SOI Devices with Significant BTI Improvement A. Shickova,N. Collaert,P. Zimmerman,M. Demand,E. Simoenet al. 2007 IEEE Symposium on VLSI Technology, Jun 2007, Kyoto, Japan. pp.112-113, ⟨10.1109/VLSIT.2007.4339748⟩ Communication dans un congrès hal-02952222v1
Cross-wafer controlled interface layer thickness variation, and its application to SiO 2 / high-κ stack characterisation B.J. O'Sullivan,V.S. Kaushik,L.-A. Ragnarsson,Lionel Trojman,B Onsiaet al. ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.395-398, ⟨10.1109/ESSDER.2006.307721⟩ Communication dans un congrès hal-02952300v1
High performing 8 /spl Orang/ EOT HfO/sub 2/ / tan low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions Lionel Trojman,Lars-Åke Ragnarsson,Simone Severi,K.D. Johnson,David Bruncoet al. Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 2005, Kyoto, Japan. pp.234-235, ⟨10.1109/.2005.1469281⟩ Communication dans un congrès hal-02952626v1

Autre publication scientifique (3)

Introducing 14A Nano-Sheet FET technology in Microwind Etienne Sicard,Lionel Trojman,Vinay Sharma 2025 Autre publication scientifique hal-05418511v1
Introducing 5-nm FinFET technology in Microwind Etienne Sicard,Lionel Trojman 2021 Autre publication scientifique hal-03254444v1
Introducing 3-nm Nano-Sheet FET technology in Microwind Etienne Sicard,Lionel Trojman 2021 Autre publication scientifique hal-03377556v1

Article dans une revue (46)

Knowledge Graph-Driven Approach in Aspect-Based Sentiment Analysis: Exploring the Impact of Embedding Techniques Souha Al Katat,Chamseddine Zaki,Hussein Hazimeh,Ibrahim El Bitar,Rafael Angaritaet al. IEEE Access, 2025, 13, pp.102553 - 102563. ⟨10.1109/access.2025.3577048⟩ Article dans une revue hal-05187209v1
Natural Language Processing for Arabic Sentiment Analysis: A Systematic Literature Review Souha Al Katat,Chamseddine Zaki,Hussein Hazimeh,Ibrahim Bitar,Rafael Angaritaet al. IEEE Transactions on Big Data, In press, pp.1-18. ⟨10.1109/TBDATA.2024.3366083⟩ Article dans une revue hal-04462327v1
SIMPLY+: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing Tatiana Moposita,Esteban Garzón,Raffaele de Rose,Felice Crupi,Andrei Vladimirescuet al. IEEE Access, 2023, 11, pp.144084-144094. ⟨10.1109/ACCESS.2023.3344197⟩ Article dans une revue hal-04462146v1
Efficiency of Double-barrier Magnetic Tunnel Junction-based Digital eNVM array for Neuro-inspired Computing Tatiana Moposita,Esteban Garzón,Andrei Vladimirescu,Marco Lanuzza,Felice Crupiet al. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70 (3), pp.1254-1258. ⟨10.1109/TCSII.2023.3240474⟩ Article dans une revue hal-04186109v1
A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination Lionel Trojman,Eliana Acurio,Brice de Jaeger,Niels Posthuma,Stefaan Decoutereet al. Solid-State Electronics, 2023, 210, pp.108778. ⟨10.1016/j.sse.2023.108778⟩ Article dans une revue hal-04462117v1
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs Esteban Garzón,Raffaele de Rose,Felice Crupi,Lionel Trojman,Adam Temanet al. Solid-State Electronics, 2022, 194, pp.108315. ⟨10.1016/j.sse.2022.108315⟩ Article dans une revue hal-03812330v1
Pédagogie hybride pour l’apprentissage de la conception d’un microprocesseur simplifié niveau master avec μWind Lionel Trojman,Fatima Viteri,E. Sicard Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2022, 21, pp.1005. ⟨10.1051/j3ea/20221005⟩ Article dans une revue hal-03812282v1
Estudio de Confiabilidad en Diodos Basados en AlGaN/GaN Durante el Estado de Encendido Eliana Acurio,Lionel Trojman,Brice de Jaeger,Benoit Bakeroot Revista Politécnica, 2022, 50 (1), pp.27-34. ⟨10.33333/rp.vol50n1.03⟩ Article dans une revue hal-03812343v1
Relaxing Non-Volatility for Energy-Efficient DMTJ Based Cryogenic STT-MRAM Esteban Garzón,Raffaele De Rose,Felice Crupi,Lionel Trojman,Adam Temanet al. Solid-State Electronics, 2021, pp.108090. ⟨10.1016/j.sse.2021.108090⟩ Article dans une revue hal-03254839v1
Energy Efficient Self-Adaptive Dual Mode Logic Address Decoder Kevin Vicuña,Cristhopher Mosquera,Ariana Musello,Sara Benedictis,Mateo Rendónet al. Electronics, 2021, 10 (9), pp.1052. ⟨10.3390/electronics10091052⟩ Article dans une revue hal-03218329v1
Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration Silvana Guitarra,Laurent Raymond,Lionel Trojman Solid-State Electronics, 2021, 176, pp.107947. ⟨10.1016/j.sse.2020.107947⟩ Article dans une revue hal-03218283v1
Breast cancer, screening and diagnostic tools: All you need to know Diego Barba,Ariana León-Sosa,Paulina Lugo,Daniela Suquillo,Fernando Torreset al. Critical Reviews in Oncology/Hematology, 2021, 157, pp.103174. ⟨10.1016/j.critrevonc.2020.103174⟩ Article dans une revue hal-03218320v1
From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits Lionel Trojman,Eduardo Holguin,Marco Villegas,Luis-Miguel Procel,Ramiro Taco Electronics, 2021, 11 (4), pp.525. ⟨10.3390/electronics11040525⟩ Article dans une revue hal-03575546v1
A Low-Voltage, Low-Power Reconfigurable Current-Mode Softmax Circuit for Analog Neural Networks Massimo Vatalaro,Marco Lanuzza,Felice Crupi,Tatiana Moposita,Lionel Trojmanet al. Electronics, 2021, 10 (9), pp.1004. ⟨10.3390/electronics10091004⟩ Article dans une revue hal-03218334v1
Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress Eliana Acurio,Lionel Trojman,Felice Crupi,Tatiana Moposita,Brice de Jaegeret al. IEEE Transactions on Device and Materials Reliability, 2020, 20 (1), pp.167-171. ⟨10.1109/TDMR.2020.2969638⟩ Article dans une revue hal-02951689v1
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework Esteban Garzón,Raffaele de Rose,Felice Crupi,Lionel Trojman,Giovanni Finocchioet al. Systems Integration, 2020, 71, pp.56-69. ⟨10.1016/j.vlsi.2020.01.002⟩ Article dans une revue hal-02951681v1
Influence of GaN- and Si 3 N 4 -Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination Eliana Acurio,Felice Crupi,Nicolo Ronchi,Brice de Jaeger,Benoit Bakerootet al. IEEE Transactions on Electron Devices, 2019, 66 (2), pp.883-889. ⟨10.1109/TED.2018.2888809⟩ Article dans une revue hal-02951707v1
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework Esteban Garzón,Lionel Trojman,Felice Crupi,Marco Lanuzza,Raffaele de Rosa Microelectronic Engineering, 2019, 215, pp.111009. ⟨10.1016/j.mee.2019.111009⟩ Article dans une revue hal-02952495v1
Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model Lionel Trojman,Lars-Åke Ragnarsson,Nadine Collaert Solid-State Electronics, 2019, 154, pp.24-30. ⟨10.1016/j.sse.2019.02.003⟩ Article dans une revue hal-02952498v1
Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination Eliana Acurio,Felice Crupi,Nicolo Ronchi,Brice de Jaeger,Benoit Bakerootet al. IEEE Transactions on Electron Devices, 2018, 65 (5), pp.1765-1770. ⟨10.1109/TED.2018.2818409⟩ Article dans une revue hal-02951714v1
Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs Eliana Acurio,Felice Crupi,Paolo Magnone,Lionel Trojman,Fernando Iucolano Microelectronic Engineering, 2017, 178, pp.42-47. ⟨10.1016/j.mee.2017.04.044⟩ Article dans une revue hal-02955194v1
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT Eliana Acurio,Felice Crupi,Paolo Magnone,Lionel Trojman,Gaudenzio Meneghessoet al. Solid-State Electronics, 2017, 132, pp.49-56. ⟨10.1016/j.sse.2017.03.007⟩ Article dans une revue hal-02952520v1
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs L. Procel,F. Crupi,Lionel Trojman,J. J. Franco,B. Kaczer IEEE Transactions on Device and Materials Reliability, 2016, 16 (1), pp.98-100. ⟨10.1109/TDMR.2015.2511085⟩ Article dans une revue hal-02952182v1
Study of the scaling and the temperature for RERAM cells using the QPC model Lionel Trojman,Silvana Guitarra,Luis Miguel Procel,Laurent Raymond IEEE Latin America Transactions, 2016, 14 (12), pp.4693-4698. ⟨10.1109/TLA.2016.7816999⟩ Article dans une revue hal-02952173v1
Study of Mobility for HfO2 dielectric FDSOI-UTTB pMOS under substrate biases Lionel Trojman IEEE Latin America Transactions, 2016, 14 (10), pp.4235-4240. ⟨10.1109/TLA.2016.7786299⟩ Article dans une revue hal-02952177v1
A Defect-Centric perspective on channel hot carrier variability in nMOSFETs Luis Miguel Procel,Felice Crupi,Jacopo Franco,Lionel Trojman,Ben Kaczeret al. Microelectronic Engineering, 2015, 147, pp.72-74. ⟨10.1016/j.mee.2015.04.055⟩ Article dans une revue hal-02952535v1
Mobility Improvement Study for 8-Å-EOT HfO₂ UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility Lionel Trojman,Lars-Åke Ragnarsson,Nadine Collaert IEEE Transactions on Electron Devices, 2014, 61 (11), pp.3632-3638. ⟨10.1109/TED.2014.2357673⟩ Article dans une revue hal-02952199v1
Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs Luis Miguel Procel,Felice Crupi,Jacopo Franco,Lionel Trojman,Ben Kaczer IEEE Electron Device Letters, 2014, 35 (12), pp.1167-1169. ⟨10.1109/LED.2014.2361342⟩ Article dans une revue hal-02952196v1
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO 2 -based resistive random access memories Luis-Miguel Procel,Lionel Trojman,Jorge Moreno,Felice Crupi,Vicenzo Maccaronioet al. Journal of Applied Physics, 2013, 114 (7), pp.074509. ⟨10.1063/1.4818499⟩ Article dans une revue hal-02952394v1
DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory Vicenzo Maccaronio,Luis-Miguel Procel,Felice Crupi,Ludovic Goux,Eddy Simoenset al. Microelectronic Engineering, 2013, 107, pp.1-5. ⟨10.1016/j.mee.2013.02.076⟩ Article dans une revue hal-02952546v1
High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects Lionel Trojman,L. Pantisano,L. Ragnarsson IEEE Transactions on Electron Devices, 2012, 59 (7), pp.1856-1862. ⟨10.1109/TED.2012.2193402⟩ Article dans une revue hal-02952204v1
Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)—Does the Dielectric Quality Matter? Lionel Trojman,Luigi Pantisano,Morin Dehan,Isabelle Ferain,Simone Severiet al. IEEE Transactions on Electron Devices, 2009, 56 (12), pp.3009-3017. ⟨10.1109/TED.2009.2032280⟩ Article dans une revue hal-02953781v1
Understanding and Importance of Defects in Advanced Materials Luigi Pantisano,Lionel Trojman,Rob O'Connor,Ben Kaczer,Guido Groeseneken ECS Transactions, 2009, 18 (1), pp.651 Article dans une revue hal-02953478v1
Trapping in 1nm EOT high-k/MG Mohamed Zahid,Luigi Pantisano,Robin Degraeve,Marc Aoulaiche,Lionel Trojmanet al. ECS Transactions, 2008, 16 (5), pp.77 Article dans une revue hal-02953461v1
Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100) Lionel Trojman,Luigi Pantisano,Isabelle Ferain,Simone Severi,Herman Maeset al. IEEE Transactions on Electron Devices, 2008, 55 (12), pp.3414-3420. ⟨10.1109/TED.2008.2006548⟩ Article dans une revue hal-02952208v1
On the Impact of Defects Close to the Gate Electrode on the Low-Frequency $\hbox{1}/f$ Noise Paolo Magnone,Luigi Pantisano,Felice Crupi,Lionel Trojman,Calogero Paceet al. IEEE Electron Device Letters, 2008, 29 (9), pp.1056-1058. ⟨10.1109/LED.2008.2001551⟩ Article dans une revue hal-02952213v1
Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks Isabelle Ferain,Luigi Pantisano,Anil Kottantharayil,Julie Pietry,Lionel Trojmanet al. Microelectronic Engineering, 2007, 84 (9-10), pp.1882-1885. ⟨10.1016/j.mee.2007.04.074⟩ Article dans une revue istex hal-02952528v1
High-k Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality—A Mobility Study Lionel Trojman,Lars-Ke Ragnarsson,Barry O'Sullivan,Maarten Rosmeulen,Vidya Kaushiket al. IEEE Transactions on Electron Devices, 2007, 54 (3), pp.497-503. ⟨10.1109/TED.2006.890230⟩ Article dans une revue hal-02952297v1
Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI M. Aoulaiche,M. Houssa,W. Deweerd,Lionel Trojman,T. Conardet al. IEEE Electron Device Letters, 2007, 28 (7), pp.613-615. ⟨10.1109/LED.2007.899435⟩ Article dans une revue hal-02952264v1
Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation Barry O'Sullivan,Vidya Kaushik,J.-L. Everaert,Lionel Trojman,Lars-Ke Ragnarssonet al. IEEE Transactions on Electron Devices, 2007, 54 (7), pp.1771-1775. ⟨10.1109/TED.2007.898460⟩ Article dans une revue hal-02952277v1
The Electrochemical Society High-k Characterization by RFCV Enrique San Andres,Luigi Pantisano,Philippe Roussel,Maria Toledano-Luque,Lionel Trojmanet al. ECS Transactions, 2007, 11 (4) Article dans une revue hal-02953456v1
Performance assessment of (110) p-FET high-κ/MG: is it mobility or series resistance limited? Lionel Trojman,Luigi Pantisano,Simone Severi,Enrique San Andres,Thomas Hoffmanet al. Microelectronic Engineering, 2007, 84 (9-10), pp.2058-2062. ⟨10.1016/j.mee.2007.04.090⟩ Article dans une revue istex hal-02952501v1
Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions L.-A. Ragnarsson,S. Severi,Lionel Trojman,K.D. Johnson,D.P. Bruncoet al. IEEE Transactions on Electron Devices, 2006, 53 (7), pp.1657-1668. ⟨10.1109/TED.2006.876274⟩ Article dans une revue hal-02952318v1
RF Split Capacitance–Voltage Measurements of Short-Channel and Leaky MOSFET Devices E. San Andres,L. Pantisano,J. Ramos,S. Severi,Lionel Trojmanet al. IEEE Electron Device Letters, 2006, 27 (9), pp.772-774. ⟨10.1109/LED.2006.881089⟩ Article dans une revue hal-02952311v1
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility Guilherme Lujan,Wim Magnus,Bart Sorée,Lars-Åke Ragnarsson,Lionel Trojmanet al. Microelectronic Engineering, 2005, 80, pp.82-85. ⟨10.1016/j.mee.2005.04.047⟩ Article dans une revue istex hal-02952537v1
Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices Lionel Trojman,Lars-Åke Ragnarsson,Luigi Pantisano,Guilherme Lujan,Michel Houssaet al. Microelectronic Engineering, 2005, 80, pp.86-89. ⟨10.1016/j.mee.2005.04.107⟩ Article dans une revue istex hal-02952523v1

Poster de conférence (1)

Comparator Circuit for Power Applications based on Enhancement-mode p-GaN HEMTs Nataly Pozo,Lionel Trojman,Luis Miguel Prócel Iberhip hoosted by LASCAS2023, Mar 2023, Quito, Ecuador Poster de conférence hal-04186182v1

Rapport (1)

Introducing 2-nm/20Å Nano-Sheet FET technology with Buried Power Rails and nano Through-Silicon-Vias in Microwind Etienne Sicard,Lionel Trojman insa Toulouse. 2022 Rapport hal-03902018v1

HDR (1)

Assessment of novel devices in CMOS technology by electrical characterization and physics-based model Lionel Trojman Engineering Sciences [physics]. Sorbonne Université, 2020 HDR tel-04186009v1