Loris Pace
19
Documents
Publications
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Analytical Design of a Finite Input Inductance 34.5 MHz Class E Inverter for Wireless Power TransferInternational Conference on Integrated Power Electronics Systems, Power Engineering Society VDE ETG, Mar 2024, Düsseldorf, Germany
Communication dans un congrès
hal-04483567v1
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Caractérisation de deux gate drivers pour la commande de GaN-HEMT aux fréquences VHFSymposium de Génie Electrique, Jul 2023, Lille, France
Communication dans un congrès
hal-04160797v1
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Design and Modeling of a 100W 1MHz GaN-Based Single-Switch Resonant Converter for High Power Density Inherent PFC LED Driver2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Sep 2023, Aalborg, Denmark. pp.1-9, ⟨10.23919/EPE23ECCEEurope58414.2023.10264555⟩
Communication dans un congrès
hal-04288053v1
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Onduleur de puissance à base de composants distribuésSymposium de Génie Electrique, Jul 2023, Lille, France
Communication dans un congrès
hal-04149980v1
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Design Method of a High Frequency GaN-based Half-Bridge with Bottom-Side Cooled Transistors Using Multi-PCB AssemblyEPE'22 ECCE Europe, Sep 2022, Hanover, Germany
Communication dans un congrès
hal-03829275v1
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Characterization and modeling of 650V GaN diodes for high frequency power conversionDMC conference, Jul 2021, BATH, United Kingdom. pp.1-5
Communication dans un congrès
hal-03341230v1
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Electrothermal modeling of GaN power transistor for high frequency power converter design22nd European Conference on Power Electronics and Applications (EPE ECCE Europe), Sep 2020, Lyon, France. pp.1-10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215782⟩
Communication dans un congrès
hal-03276912v1
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A method to determine wide bandgap power devices packaging interconnections23rd IEEE Workshop on Signal and Power Integrity (SPI), Jun 2019, Chambery, France. pp.1-4, ⟨10.1109/SaPIW.2019.8781641⟩
Communication dans un congrès
hal-03276911v1
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Impedance measurement in operating conditions for PLC applications2018 IEEE 22nd Workshop on Signal and Power Integrity, May 2018, Brest, France. pp.1 - 4, ⟨10.1109/sapiw.2018.8401649⟩
Communication dans un congrès
hal-01838830v1
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S-parameters characterization of GaN power transistors for high frequency power converters designInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018, Jun 2018, Nuremberg, Germany. pp.913-920
Communication dans un congrès
hal-04443970v1
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Méthode de caractérisation de transistors GaN pour la conception des convertisseurs statiques hautes fréquencesSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02981879v1
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Simulation-based Study on the Optical Beam Intensity Dependence of the Optically Triggered 4H-SiC Thyristors Turn-on OperationInternational Conference on Solid State Devices and Materials 2016, Sep 2016, Tsukuba International Congress Center Tsukuba, Japan. ⟨10.7567/SSDM.2016.PS-14-17L⟩
Communication dans un congrès
hal-04088082v1
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Caractérisation et modélisation de composants GaN pour la conception de convertisseurs statiques haute fréquenceMicro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI078⟩
Thèse
tel-03624112v1
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