Magali Gregoire

Publications

Article dans une revue (24)

Redistribution of Pt during the agglomeration of NiSi D. Mangelinck,Fabriziofranco Morris Anak,K. Dabertrand,S. Guillemin,Ch. Girardeauxet al. Acta Materialia, 2025, 286, pp.120698. ⟨10.1016/j.actamat.2024.120698⟩ Article dans une revue hal-05194216v1
Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: partial, laser, total, and unique anneal Fabriziofranco Morris Anak,Andrea Campos,Magali Gregoire,Adrien Estellon,Marc Lombardet al. Materials Science in Semiconductor Processing, 2025, 184, pp.108806. ⟨10.1016/j.mssp.2024.108806⟩ Article dans une revue hal-04789456v1
Multiple-step Siconi pre-clean advantages for Ni(Pt)Si film formation in the frame of advanced FDSOI technology development Magali Grégoire,Fabriziofranco Morris Anak,Camille Sgrillo,Jean-Gabriel Mattei,Hugo Nuezet al. Materials Science in Semiconductor Processing, 2025, 198, pp.109783. ⟨10.1016/j.mssp.2025.109783⟩ Article dans une revue hal-05393464v1
C54-TiSi$_2$ formation using nanosecond laser annealing of A-Si/Ti/A-Si stacks Réda Guelladress,Sébastien Kerdilès,Mélanie Dartois,Chiara Sabbione,Magali Gregoireet al. Thin Solid Films, 2024, 798, pp.140386. ⟨10.1016/j.tsf.2024.140386⟩ Article dans une revue cea-04770913v1
Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: Partial, laser, total, and one-step annealings Fabriziofranco Morris Anak,Andréa Campos,Magali Grégoire,Adrien Estellon,Marc Lombardet al. Materials Science in Semiconductor Processing, 2024, 184, pp.108806. ⟨10.1016/j.mssp.2024.108806⟩ Article dans une revue cea-04765828v1
On the influence of Ni(Pt)Si thin film formation on agglomeration threshold temperature and its impact on 3D imaging technology integration M. Grégoire,F. Morris Anak,S. Verdier,K. Dabertrand,S. Guilleminet al. Microelectronic Engineering, 2023, 271-272, pp.111937. ⟨10.1016/j.mee.2023.111937⟩ Article dans une revue hal-04285798v1
Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices Flore Boyer,Karen Dabertrand,Nicolas Bernier,Christophe Jany,Patrice Gergaudet al. Materials Science in Semiconductor Processing, 2023, 154, pp.107199. ⟨10.1016/j.mssp.2022.107199⟩ Article dans une revue hal-04742893v1
Influence of Si surface preparation on CoSi2 formation and agglomeration Andréa Newman,Andrea Campos,David Pujol,Pascal Fornara,Magali Gregoireet al. Materials Science in Semiconductor Processing, 2023, 162, pp.107488. ⟨10.1016/j.mssp.2023.107488⟩ Article dans une revue hal-04285750v1
Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors E. Brezza,F. Deprat,C. de Buttet,A. Gauthier,M. Gregoireet al. Solid-State Electronics, 2023, 204, pp.108654. ⟨10.1016/j.sse.2023.108654⟩ Article dans une revue hal-04084450v1
Impact of the pre amorphization by Ge implantation on Ni$_{0.9}$Pt$_{0.1}$ silicide C. Delwail,S. Joblot,F. Mazen,F. Abbate,L. Lachalet al. Microelectronic Engineering, 2022, 254, pp.111705. ⟨10.1016/j.mee.2021.111705⟩ Article dans une revue hal-03863804v1
Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology F. Boyer,K. Dabertrand,P. Gergaud,M. Grégoire,Quentin Rafhayet al. Materials Science in Semiconductor Processing, 2021, 128, pp.105731. ⟨10.1016/j.mssp.2021.105731⟩ Article dans une revue hal-04742836v1
IMPACT OF NANOSECOND LASER ENERGY DENSITY ON THE C40-TiSi2 FORMATION AND C54-TiSi2 TRANSFORMATION TEMPERATURE. Laura Esposito,S. Kerdiles,M. Gregoire,P. Benigni,K. Dabertrandet al. Journal of Applied Physics, 2020, 128 (8), pp.085305. ⟨10.1063/5.0016091⟩ Article dans une revue hal-02922876v1
Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers Flore Boyer,Patrice Gergaud,Karen Dabertrand,Denis Mariolle,Christophe Janyet al. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (1), pp.012209. ⟨10.1116/1.5128554⟩ Article dans une revue hal-04743063v1
Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III–V Devices on a 300-mm Platform F. Boyer,K. Dabertrand,C. Jany,P. Gergaud,N. Coudurieret al. IEEE Transactions on Electron Devices, 2020, 67 (6), pp.2495-2502. ⟨10.1109/TED.2020.2985766⟩ Article dans une revue hal-04743053v1
Redistribution of phosphorus during Ni 0.9 Pt 0.1 -based silicide formation on phosphorus implanted Si substrates M. Lemang,Ph. Rodriguez,F. Nemouchi,M. Juhel,M. Grégoireet al. Journal of Applied Physics, 2018, 123 (8), ⟨10.1063/1.5020123⟩ Article dans une revue hal-01728691v1
Redistribution of phosphorus during NiPtSi formation on in-situ doped Si M. Lemang,Ph. Rodriguez,M. Gregoire,M. Juhel,B. Saidiet al. Microelectronic Engineering, 2018, 202, pp.25-30. ⟨10.1016/j.mee.2018.10.005⟩ Article dans une revue hal-02403309v1
Boron atomic-scale mapping in advanced microelectronics by atom probe tomography Robert Estivill,Marc Juhel,Germain Servanton,Magali Grégoire,Fréderic Lorutet al. Applied Physics Letters, 2017, 110, pp.252105. ⟨10.1063/1.4989676⟩ Article dans une revue hal-01765934v1
Thermal stability of Ni1-uPtu (0 &lt; u &lt; 0.15) germanosilicide E. Bourjot,M. Gregoire,F. Nemouchi,Dominique Mangelinck Journal of Applied Physics, 2017, 121 (13), ⟨10.1063/1.4979529⟩ Article dans une revue hal-01694204v1
Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges Julien Borrel,Louis Hutin,Donato Kava,Rémy Gassilloud,Nicolas Bernieret al. Japanese Journal of Applied Physics, 2017, 56 (4), pp.04CB02. ⟨10.7567/JJAP.56.04CB02⟩ Article dans une revue hal-03325004v1
Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part I Julien Borrel,Louis Hutin,Olivier Rozeau,Marie-Anne Jaud,Sebastien Martinieet al. IEEE Transactions on Electron Devices, 2016, 63 (9), pp.3413-3418. ⟨10.1109/TED.2016.2590836⟩ Article dans une revue hal-03325007v1
Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II Julien Borrel,Louis Hutin,Olivier Rozeau,Marie-Anne Jaud,Sebastien Martinieet al. IEEE Transactions on Electron Devices, 2016, 63 (9), pp.3419-3423. ⟨10.1109/TED.2016.2590826⟩ Article dans une revue hal-03325006v1
Atomic Scale Investigation of Arsenic Segregation in High-k Metal Gate Stacks Robert Estivill,Marc Juhel,Magali Gregoire,Adeline Grenier,Vincent Delayeet al. Scripta Materialia, 2016, 113, pp.231-235. ⟨10.1016/j.scriptamat.2015.10.034⟩ Article dans une revue hal-01954200v1
Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions E. Bourjot,Magali Putero,C. Perrin-Pellegrino,P. Gergaud,Magali Gregoireet al. Microelectronic Engineering, 2014, 120, pp.163-167. ⟨10.1016/j.mee.2013.12.009⟩ Article dans une revue hal-01951263v1
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology C. Fenouillet-Beranger,P. Perreau,T. Benoist,C. Richier,S. Haendleret al. Solid-State Electronics, 2013, 88, pp.15-20,. ⟨10.1016/j.sse.2013.04.008⟩ Article dans une revue istex hal-01002051v1

Communication dans un congrès (14)

Enhanced RF Switch Performance in RFSOI Technology: Achieving 74 fs R ON ·C OFF and 3.3 V RFV MAX on Thinned SOI Thomas Bordignon,Luca Lucci,Thibaud Fache,Clément Pribat,Magali Grégoireet al. 2024 IEEE European Solid-State Electronics Research Conference (ESSERC), Sep 2024, Bruges, Belgium. pp.448-451, ⟨10.1109/ESSERC62670.2024.10719593⟩ Communication dans un congrès hal-04786482v1
Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions Ismael Charlet,Lucas Deniel,Pablo Acosta-Alba,Yohan Desieres,Sylvain Guerberet al. Silicon Photonics XVI, Mar 2021, Online Only, France. pp.116910R, ⟨10.1117/12.2577806⟩ Communication dans un congrès cea-04948644v1
Impact of Nanosecond Laser Annealing on the Formation of Titanium Silicides Laura Esposito,Sebastien Kerdiles,Magali Gregoire,Dominique Mangelinck 2021 20th International Workshop on Junction Technology (IWJT), Jun 2021, Kyoto, France. pp.1-6, ⟨10.23919/IWJT52818.2021.9609410⟩ Communication dans un congrès hal-03454117v1
Nickel-based CMOS-compatible contacts on p-In 0.53 Ga 0.47 As for III-V / silicon hybrid lasers F. Boyer,K. Dabertrand,P. Gergaud,N. Coudurier,F. Nemouchiet al. 2020 IEEE International Interconnect Technology Conference (IITC), Oct 2020, San Jose, France. pp.121-123, ⟨10.1109/IITC47697.2020.9515625⟩ Communication dans un congrès hal-04742876v1
28nm FDSOI CMOS Technology (FEOL and BEOL) Thermal Stability for 3D Sequential Integration: Yield and Reliability Analysis C. Cavalcante,C. Fenouillet-Beranger,P. Batude,X. Garros,X. Federspielet al. 2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. pp.1-2, ⟨10.1109/VLSITechnology18217.2020.9265075⟩ Communication dans un congrès cea-04521647v1
Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers F. Boyer,C. Jany,J. da Fonseca,B. Szelag,V. Amalberget al. 2019 IEEE 16th International Conference on Group IV Photonics (GFP), Aug 2019, Singapore, Singapore. pp.1-2, ⟨10.1109/GROUP4.2019.8926115⟩ Communication dans un congrès hal-04743098v1
Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges Julien Borrel,Louis Hutin,Helen Grampeix,Emmanuel Nolot,Magali Tessaireet al. IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19 Communication dans un congrès hal-03325000v1
Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts Julien Borrel,L. Hutin,H. Grampeix,E. Nolot,E. Gheginet al. IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.140-141, ⟨10.1109/SNW.2016.7578022⟩ Communication dans un congrès hal-03325002v1
Nouvelle technologie de contact pour CMOS FD-SOI 10nm et en deçà le contact dipolaire Julien Borrel,Louis Hutin,Magali Grégoire,Fabrice Nemouchi,Olivier Rozeauet al. 17es Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p Communication dans un congrès hal-01020275v1
Comparison of Radio Frequency Physical Vapor Deposition target material used for LaOx cap layer deposition in 32nm S. Baudot,P. Caubet,M. Grégoire,R. A. Bianchi,R. Pantelet al. Int. Conf. materials for advanced metallization, MAM 2010, 2010, Malines, Belgium Communication dans un congrès hal-00604574v1
Mechanical Properties and reliability of Copper thin films. Some aspects related to stress voiding and interconnections M. Ignat,M. Swain,M. Gregoire Quality and Reliability CCF 2006, 2006, Sinaia, Romania. pp.414-423 Communication dans un congrès hal-00149038v1
Microstructure and Mechanical Properties of ECD and PVD Cu thin films M. Ignat,F. Robaud,M. Swain,M. Gregoire Vth Institute of Materials International Conference(East Asia) –MP3, 2006, Singapore, pp.122-125 Communication dans un congrès hal-00149034v1
Microstructure and Mechanical Properties of ECD and PVD Cu thin films M. Ignat,F. Robaud,M. Swain,M. Gregoire Vth Institute of Materials International Conference(East Asia) –MP3, 2006, Singapore, Singapore Communication dans un congrès hal-00140909v1
Mechanical Properties and reliability of Copper thin films M. Ignat,M. Swain,M. Gregoire Quality and Reliability CCF 2006, 2006, Sinaia, Romania Communication dans un congrès hal-00140907v1

HDR (1)

HDR Magali Grégoire Silicide in microelectronics: phase sequence, nanoscale effect, and degradation Magali Gregoire Physics [physics]. Aix-Marseille Universite, 2022 HDR tel-04193978v1

Chapitre d'ouvrage (1)

Microstructure and mechanical properties of PVD and ECD Cu thin films M. Ignat,F. Robaud,M. Swain,M. Gregoire K. A. Khor, R. V. Ramanujan, C. P. Ooi, J. H. Zhao, W. Zhou, L. G. Yu. Materials Processing for Properties and Performance, Materials Processing for Properties and Performance, pp.122-125, 2006 Chapitre d'ouvrage hal-00149047v1