Marco Pala

Identifiants chercheurs

IdHAL :

marco-pala

ORCID :

0000-0001-5733-515X

IdRef :

185867715

ResearcherID :

http://www.researcherid.com/rid/D-6579-2013

Publications

Article dans une revue (86)

Mexican hat–like valence band dispersion and quantum confinement in rhombohedral ferroelectric α−In2Se3 Geoffroy Kremer,Aymen Mahmoudi,Meryem Bouaziz,Mehrdad Rahimi,François Bertranet al. Physical Review B, 2025, 112, pp.155418. ⟨10.1103/n2l9-7vjl⟩ Article dans une revue hal-05318490v1
Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current D K Nguyen,A. Pilotto,D. Lizzit,M. Pala,Philippe Dollfuset al. IEEE Transactions on Electron Devices, 2025, 72 (12), pp.7114 - 7121. ⟨10.1109/ted.2025.3627189⟩ Article dans une revue hal-05407740v1
Hybridization in van der Waals Epitaxy of PtSe 2 /h-BN and PtSe 2 /Graphene Heterostructures Meryem Bouaziz,Samir El Masaoudi,Aymen Mahmoudi,Eva Desgué,Marco Palaet al. ACS Nano, 2025, 19 (45), pp.39035-39042. ⟨10.1021/acsnano.5c09244⟩ Article dans une revue hal-05400824v1
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride Meryem Bouaziz,Aymen Mahmoudi,Davide Romanin,Jean-Christophe Girard,Yannick J Dappeet al. Physical Review B, 2024, 110 (4), pp.045441. ⟨10.1103/physrevb.110.045441⟩ Article dans une revue hal-04797718v1
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence Anis Chiout,Agnès Tempez,Thomas Carlier,Marc Chaigneau,Fabian Cadizet al. Advanced Optical Materials, 2024, 12 (14), pp.2302369. ⟨10.1002/adom.202302369⟩ Article dans une revue hal-04614707v1
Thermal conductance of twisted-layer graphite nanofibers Van-Truong Tran,Thanh-Tra Vu,Jérôme Saint-Martin,Marco Pala,Philippe Dollfus Carbon, 2023, 204, pp.601-611. ⟨10.1016/j.carbon.2022.12.059⟩ Article dans une revue hal-03995068v1
Direct observation of highly anisotropic electronic and optical nature in indium telluride Geoffroy Kremer,Aymen Mahmoudi,Meryem Bouaziz,Cléophanie Brochard-Richard,Lama Khalilet al. Physical Review Materials, 2023, 7 (7), pp.074601. ⟨10.1103/physrevmaterials.7.074601⟩ Article dans une revue hal-04159938v1
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 Geoffroy Kremer,Aymen Mahmoudi,Adel M'Foukh,Meryem Bouaziz,Mehrdad Rahimiet al. ACS Nano, 2023, ⟨10.1021/acsnano.3c04186⟩ Article dans une revue hal-04179830v1
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off Daniel Lizzit,Pedram Khakbaz,Francesco Driussi,Marco Pala,David Esseni ACS Applied Nano Materials, 2023, 6 (7), pp.5737-5746. ⟨10.1021/acsanm.3c00166⟩ Article dans une revue hal-04123791v1
Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloy Jihene Zribi,Debora Pierucci,Federico Bisti,Biyuan Zheng,José Avilaet al. Nanotechnology, 2023, 34 (7), pp.075705. ⟨10.1088/1361-6528/aca0f6⟩ Article dans une revue hal-04265051v1
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe&lt;sub&gt;2&lt;/sub&gt; on GaP(111) Heterostructure Aymen Mahmoudi,Meryem Bouaziz,Niels Chapuis,Geoffroy Kremer,Julien Chasteet al. ACS Nano, 2023, 17, pp.21307 - 21316. ⟨10.1021/acsnano.3c05818⟩ Article dans une revue hal-04302601v1
Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor deposition Aymen Mahmoudi,Meryem Bouaziz,Anis Chiout,Gaia Di Berardino,Nathan Ullberget al. Physical Review B, 2023, 108 (4), pp.045417. ⟨10.1103/PhysRevB.108.045417⟩ Article dans une revue hal-04302594v1
Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer Lama Khalil,Debora Pierucci,Emilio Velez-Fort,José Avila,Céline Vergnaudet al. Nanotechnology, 2023, 34 (4), pp.045702. ⟨10.1088/1361-6528/ac9abe⟩ Article dans une revue hal-03864963v1
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials Adel Mfoukh,Jérôme Saint-Martin,Philippe Dollfus,Marco Pala Journal of Computational Electronics, 2023, 22, pp.1257-1263. ⟨10.1007/s10825-023-02080-2⟩ Article dans une revue hal-04161457v1
Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride Meryem Bouaziz,Aymen Mahmoudi,Geoffroy Kremer,Julien Chaste,César Gonzálezet al. Physical Review Research, 2023, 5 (3), pp.033152. ⟨10.1103/PhysRevResearch.5.033152⟩ Article dans une revue hal-04190986v2
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator Daniel Lizzit,Pedram Khakbaz,Francesco Driussi,Marco G. Pala,David Esseni Solid-State Electronics, 2022, 194, pp.108365. ⟨10.1016/j.sse.2022.108365⟩ Article dans une revue hal-03793953v1
α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene Lama Khalil,Pietro Maria Forcella,Geoffroy Kremer,Federico Bisti,Julien Chasteet al. Physical Review B, 2022, 106 (12), pp.125152. ⟨10.1103/physrevb.106.125152⟩ Article dans une revue hal-03865011v1
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes A. Pilotto,J. Saint-Martin,Marco G. Pala,Philippe Dollfus Solid-State Electronics, 2022, 198, pp.108469. ⟨10.1016/j.sse.2022.108469⟩ Article dans une revue hal-03818605v1
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices Remi Helleboid,Denis Rideau,Jeremy Grebot,Isobel Nicholson,Norbert Moussyet al. IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩ Article dans une revue hal-03794480v1
Phonon-assisted transport in van der Waals heterostructure tunnel devices A. M'Foukh,Jérôme Saint-Martin,Philippe Dollfus,Marco G. Pala Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩ Article dans une revue hal-03793956v1
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes Remi Helleboid,Denis Rideau,Isobel Nicholson,Jeremy Grebot,Bastien Mamdyet al. Journal of Physics D: Applied Physics, 2022, 55, pp.505102. ⟨10.1088/1361-6463/ac9b6a⟩ Article dans une revue hal-03828806v1
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter Yanjie Shao,Marco G. Pala,David Esseni,Jesus del Alamo IEEE Transactions on Electron Devices, 2022, 69 (4), pp.2188-2195. ⟨10.1109/TED.2022.3145767⟩ Article dans une revue hal-03793957v1
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy Debora Pierucci,Aymen Mahmoudi,Mathieu Silly,Federico Bisti,Fabrice Oehleret al. Nanoscale, 2022, 14 (15), pp.5859-5868. ⟨10.1039/D2NR00458E⟩ Article dans une revue hal-03674688v1
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines Rémi Helleboid,Denis Rideau,Jeremy Grebot,Isobel Nicholson,Norbert Moussyet al. Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩ Article dans une revue hal-03793952v1
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation Philippe Dollfus,Jérôme Saint-Martin,T. Cazimajou,R. Helleboid,A. Pilottoet al. Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩ Article dans une revue hal-03793955v1
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys Cyrine Ernandes,Lama Khalil,Hela Almabrouk,Debora Pierucci,Biyuan Zhenget al. npj 2D Materials and Applications, 2021, 5, pp.7. ⟨10.1038/s41699-020-00187-9⟩ Article dans une revue hal-03450806v1
Quenching Statistics of Silicon Single Photon Avalanche Diodes Thibauld Cazimajou,Marco G. Pala,Jerome Saint-Martin,Remi Helleboid,Jeremy Grebotet al. IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3127013⟩ Article dans une revue hal-03439663v1
Electronic band gap of van der Waals α-As2Te3 crystals Lama Khalil,Jean-Christophe Girard,Debora Pierucci,Federico Bisti,Julien Chasteet al. Applied Physics Letters, 2021, 119 (4), pp.043103. ⟨10.1063/5.0058291⟩ Article dans une revue hal-03321708v1
Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer Cyrine Ernandes,Lama Khalil,Hugo Henck,Meng-Qiang Zhao,Julien Chasteet al. Nanomaterials, 2021, 11 (11), pp.2921. ⟨10.3390/nano11112921⟩ Article dans une revue hal-03450796v1
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors Jiang Cao,Yu Wu,Hao Zhang,Demetrio Logoteta,Shengli Zhanget al. npj 2D Materials and Applications, 2021, 5 (1), ⟨10.1038/s41699-021-00238-9⟩ Article dans une revue hal-03334913v1
Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials Adel M'Foukh,Marco G. Pala,David Esseni IEEE Transactions on Electron Devices, 2020, 67 (12), pp.5662-5668. ⟨10.1109/TED.2020.3029548⟩ Article dans une revue hal-03029917v1
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions D. Logoteta,J. Cao,Marco G. Pala,P. Dollfus,Y. Leeet al. Physical Review Research, 2020, 2 (4), ⟨10.1103/PhysRevResearch.2.043286⟩ Article dans une revue hal-03032703v1
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application Marco G. Pala,P. Giannozzi,D. Esseni Physical Review B, 2020, 102 (4), ⟨10.1103/PhysRevB.102.045410⟩ Article dans une revue hal-03029916v1
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices Marco Pala,David Esseni Journal of Applied Physics, 2019, 126 (5), pp.055703. ⟨10.1063/1.5109187⟩ Article dans une revue hal-02350925v1
A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect Demetrio Logoteta,Marco Pala,Jean Choukroun,Philippe Dollfus,Giuseppe Iannaccone IEEE Electron Device Letters, 2019, 40 (9), pp.1550-1553. ⟨10.1109/LED.2019.2928131⟩ Article dans une revue hal-02350929v1
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions Jean Choukroun,Marco Pala,Shiang Fang,Efthimios Kaxiras,Philippe Dollfus Nanotechnology, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩ Article dans une revue hal-02350992v1
Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study Corentin Grillet,Alessandro Cresti,Marco Pala IEEE Transactions on Electron Devices, 2018, 65 (7), pp.3038-3044. ⟨10.1109/TED.2018.2834307⟩ Article dans une revue hal-01964683v1
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications Marco G. Pala,D. Esseni Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (12), ⟨10.1103/PhysRevB.97.125310⟩ Article dans une revue hal-02351013v1
Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors Jiang Cao,Demetrio Logoteta,Marco Pala,Alessandro Cresti Journal of Physics D: Applied Physics, 2018, 51 (5), pp.055102. ⟨10.1088/1361-6463/aaa1b6⟩ Article dans une revue hal-01964684v1
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs Demetrio Logoteta,Nicolas Cavassilas,Alessandro Cresti,Marco Pala,Marc Bescond IEEE Transactions on Electron Devices, 2018, 65 (2), pp.424 - 430. ⟨10.1109/TED.2017.2785123⟩ Article dans une revue hal-01761818v1
On the origins of transport inefficiencies in mesoscopic networks Sébastien Toussaint,Frederico Martins,Sebastien Faniel,Marco Pala,L. Desplanqueet al. Scientific Reports, 2018, 8, pp.3017. ⟨10.1038/s41598-018-21250-y⟩ Article dans une revue hal-01920614v1
Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures Jiang Cao,Jejune Park,François Triozon,Marco Pala,Alessandro Cresti Composants nanoélectroniques, 2018, 18 (1), ⟨10.21494/ISTE.OP.2018.0222⟩ Article dans une revue hal-01964713v1
A review of selected topics in physics based modeling for tunnel field-effect transistors Marco G. Pala,David Esseni,Pierpaolo Palestri,Cem Alper,Tommaso Rollo Semiconductor Science and Technology, 2017, 32 (8), pp.083005. ⟨10.1088/1361-6641/aa6fca⟩ Article dans une revue hal-02351119v1
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs Corentin Grillet,Demetrio Logoteta,Alessandro Cresti,Marco G. Pala IEEE Transactions on Electron Devices, 2017, 64 (5), pp.2425-2431. ⟨10.1109/TED.2017.2679226⟩ Article dans une revue hal-01694193v1
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides Jiang Cao,Alessandro Cresti,David Esseni,Marco Pala Solid-State Electronics, 2016, 116, pp.1-7. ⟨10.1016/j.sse.2015.11.003⟩ Article dans une revue istex hal-01964708v1
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study Jiang Cao,Demetrio Logoteta,Sibel Ozkaya,Blanca Biel,Alessandro Crestiet al. IEEE Transactions on Electron Devices, 2016, 63 (11), pp.4388-4394. ⟨10.1109/TED.2016.2605144⟩ Article dans une revue hal-01434942v1
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors Marco Pala,Corentin Grillet,Jiang Cao,Demetrio Logoteta,Alessandro Crestiet al. Journal of Computational Electronics, 2016, 15 (4), pp.1240-1247. ⟨10.1007/s10825-016-0900-8⟩ Article dans une revue hal-01964711v1
Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy Peng Liu,Frederico Martins,Benoit Hackens,L. Desplanque,Xavier Wallartet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (7), pp.075313. ⟨10.1103/PhysRevB.91.075313⟩ Article dans une revue hal-01121907v1
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study M. Pala,Alessandro Cresti Journal of Applied Physics, 2015, 117 (8), pp.084313. ⟨10.1063/1.4913511⟩ Article dans une revue hal-01964705v1
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs David Esseni,Marco Pala,Tommaso Rollo IEEE Transactions on Electron Devices, 2015, 62 (9), pp.3084-3091. ⟨10.1109/TED.2015.2458171⟩ Article dans une revue hal-02054286v1
Exploiting Hetero-Junctions to Improve the Performance of III–V Nanowire Tunnel-FETs Marco Pala,Sylvan Brocard IEEE Journal of the Electron Devices Society, 2015, 3 (3), pp.115-121. ⟨10.1109/JEDS.2015.2395719⟩ Article dans une revue hal-02057583v1
(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects D. Esseni,M. Pala,A. Revelant,P. Palestri,L. Selmiet al. ECS Transactions, 2014, 64 (6), pp.581-595. ⟨10.1149/06406.0581ecst⟩ Article dans une revue hal-02065983v1
(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs M. Pala,D. Esseni ECS Transactions, 2014, 61 (2), pp.237-251. ⟨10.1149/06102.0237ecst⟩ Article dans une revue hal-02065902v1
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading S. Brocard,M.G. Pala,D. Esseni IEEE Electron Device Letters, 2014, 35 (2), pp.184-186. ⟨10.1109/LED.2013.2295884⟩ Article dans une revue hal-01002251v1
Interface Traps in InAs Nanowire Tunnel FETs and MOSFET -Part II: Comparative Analysis and Trap-Induced Variability D. Esseni,M.G. Pala IEEE Transactions on Electron Devices, 2013, 60 (9), pp.2802-2807. ⟨10.1109/TED.2013.2274197⟩ Article dans une revue hal-01017503v1
Coherent tunnelling across a quantum point contact in the quantum Hall regime F. Martins,S. Faniel,B. Rosenow,Hermann Sellier,Serge Huantet al. Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩ Article dans une revue hal-00932989v1
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs F. Conzatti,M.G. Pala,D. Esseni,E. Bano Solid-State Electronics, 2013, 88, pp.49-53. ⟨10.1016/j.sse.2013.04.005⟩ Article dans une revue istex hal-01002096v1
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs --Part I: Model Description and Single Trap Analysis in Tunnel-FETs M. G. Pala,D. Esseni IEEE Transactions on Electron Devices, 2013, 60 (9), pp.2795-2801. ⟨10.1109/ted.2013.2274196⟩ Article dans une revue hal-01017492v1
Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks Serge Huant,S. Baltazar,Peng Liu,Hermann Sellier,B. Hackenset al. AIP Conference Proceedings, 2013, 1566, pp.229. ⟨10.1063/1.4848369⟩ Article dans une revue hal-00933050v1
Scanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island F. Martins,S. Faniel,B. Rosenow,M. G. Pala,Hermann Sellieret al. New Journal of Physics, 2013, 15, pp.013049. ⟨10.1088/1367-2630/15/1/013049⟩ Article dans une revue hal-00932990v1
A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks Marco Pala,Hermann Sellier,Benoit Hackens,Frederico Martins,Vincent Bayotet al. Nanoscale Research Letters, 2012, 7, pp.472. ⟨10.1186/1556-276X-7-472⟩ Article dans une revue hal-00932991v1
Locating an individual quantum hall island inside a quantum ring F. Martins,S. Faniel,M.G. Pala,Hermann Sellier,Serge Huantet al. AIP Conference Proceedings, 2012, ISBN 978-0-7354-1194-4, 1566, pp.299-300. ⟨10.1063/1.4848404⟩ Article dans une revue hal-00797345v1
Rare primary mitochondrial DNA mutations and probable synergistic variants in Leber's hereditary optic neuropathy A. Achilli,L. Iommarini,A. Olivieri,M. Pala,Hooshiar Kashaniet al. PLoS ONE, 2012, 7 (8), Non spécifié. ⟨10.1371/journal.pone.0042242⟩ Article dans une revue hal-03404097v1
Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox M. G. Pala,S. Baltazar,Peng Liu,Hermann Sellier,B. Hackenset al. Physical Review Letters, 2012, 108, pp.076802. ⟨10.1103/PHYSREVLETT.108.076802⟩ Article dans une revue hal-00709528v1
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs F. Conzatti,M. Pala,D. Esseni,Edwige Bano,L. Selmi IEEE Transactions on Electron Devices, 2012, 59 (8), pp.2085-2092 Article dans une revue hal-02006109v1
Superconducting proximity effect in interacting quantum dots revealed by shot noise A. Braggio,M.G. Pala,M. Governale,J. König Solid State Communications, 2011, 151, pp.155. ⟨10.1016/j.ssc.2010.10.043⟩ Article dans une revue hal-00596337v1
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs Alessandro Cresti,Marco Pala,Stefano Poli,Mireille Mouis,Gérard Ghibaudo IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩ Article dans une revue hal-02419609v1
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations Hermann Sellier,B. Hackens,M. G. Pala,F. Martins,S. Baltazaret al. Semiconductor Science and Technology, 2011, 26 (6), pp.064008. ⟨10.1088/0268-1242/26/6/064008⟩ Article dans une revue hal-00709523v1
Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview F. Martins,B. Hackens,Hermann Sellier,Peng Liu,M. Palaet al. Acta Physica Polonica A, 2011, 119 (5), pp.569-575. ⟨10.12693/APhysPolA.119.569⟩ Article dans une revue hal-00834932v1
Imaging Coulomb islands in a quantum Hall interferometer B. Hackens,F. Martins,S. Faniel,C. A. Dutu,Hermann Sellieret al. Nature Communications, 2010, 1, pp.39. ⟨10.1038/NCOMMS1038⟩ Article dans une revue hal-00709461v1
Spin-orbit coupling and phase-coherence in InAs nanowires Estevez Hernandez S.,M. Akabori,K. Sladek,Volk Ch.,S. Alaghaet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.235303. ⟨10.1103/PhysRevB.82.235303⟩ Article dans une revue hal-00596334v1
Superconducting proximity effect in interacting double-dot systems J.D. Eldridge,M.G. Pala,M. Governale,J. König Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.184507. ⟨10.1103/PhysRevB.82.184507⟩ Article dans une revue hal-00596333v1
Nonlocal Andreev transport through an interacting quantum dot D. Futterer,M. Governale,M.G. Pala,J. König Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79 (5), pp.054505 Article dans une revue hal-00596141v1
Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri,R. Clerc,F. Calmon,M.G. Pala,A. Poncetet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6 (6), pp.1408-1411 Article dans une revue hal-00596139v1
Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs C. Buran,M.G. Pala,M. Bescond,M. Dubois,M. Mouis IEEE Transactions on Electron Devices, 2009, 56 (10), pp.2186-2192 Article dans une revue hal-00596081v1
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity M. Bescond,M. Lannoo,Fabienne Michelini,L. Raymond,Marco Pala Microelectronics Journal, 2009, 40, pp.756-758 Article dans une revue hal-00596132v1
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs K. Rogdakis,S. Poli,Edwige Bano,K. Zekentes,M. G. Pala Nanotechnology, 2009, 20 (29), pp.295202 Article dans une revue hal-00596134v1
Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects M. G. Pala,S. Baltazar,F. Martins,B. Hackens,Hermann Sellieret al. Nanotechnology, 2009, 20 (26), pp.264021. ⟨10.1088/0957-4484/20/26/264021⟩ Article dans une revue istex hal-00709514v1
Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs S. Poli,M.G. Pala,T. Poiroux IEEE Transactions on Electron Devices, 2009, 56 (6), pp.1191-1198 Article dans une revue hal-00596091v1
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs S. Poli,Marco Pala IEEE Electron Device Letters, 2009, 30 (11), pp.1212-1214 Article dans une revue hal-00596075v1
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT C. Buran,M. G. Pala,M. Bescond,M. Mouis Journal of Computational Electronics, 2008, 7 (3, 1569-1572) Article dans une revue hal-00391739v1
Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs S. Poli,M.G. Pala,T. Poiroux,S. Deleonibus,G. Baccarani IEEE Transactions on Electron Devices, 2008, 55 (11), pp.2968-2976 Article dans une revue hal-00391742v1
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads M. Governale,M.G. Pala,J. König Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77 (13, 134513) Article dans une revue hal-00391748v1
Local density of states in mesoscopic samples from scanning gate microscopy M. G. Pala,B. Hackens,F. Martins,Hermann Sellier,V. Bayotet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.125310. ⟨10.1103/PhysRevB.77.125310⟩ Article dans une revue hal-00193195v1
Imaging electron wave functions inside open quantum rings F. Martins,B. Hackens,Marco G. Pala,Thierry Ouisse,Hermann Sellieret al. Physical Review Letters, 2007, 99, pp.136807. ⟨10.1103/PhysRevLett.99.136807⟩ Article dans une revue hal-00193197v1
Non-Equilibrium Josephson and Andreev Current through Interacting Quantum Dots M.G. Pala,M. Governale,J. König New Journal of Physics, 2007, 9, pp.278 Article dans une revue hal-00393594v1

Communication dans un congrès (68)

Multi-Band Model Hamiltonian for Tunnel Devices with Van Der Waals Heterojunctions Owen Loison,Adel M'Foukh,Davide Romanin,Marco Pala,Philippe Dollfus 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186327⟩ Communication dans un congrès hal-05411859v1
Self-Consistent Advection-Diffusion Monte Carlo Simulation of Quenching in Single-Photon Avalanche Diodes Rémi Helleboid,Kenzo Morel-Handa,Isobel Nicholson,Gabriel Mugny,Denis Rideauet al. International Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States Communication dans un congrès hal-05418456v1
Improved Stochastic SPAD Quenching Model Including Build-Up Field Effect Rémi Helleboid,Samuel Dahan,Kenzo Morel-Handa,Gabriel Mugny,Isobel Nicholsonet al. 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186367⟩ Communication dans un congrès hal-05411841v1
Transient Thermal Response in 2D h-BN/Graphene Heterostructures : Ab initio based Monte Carlo simulation Junbum Park,Lorenzo Paulatto,Marco Pala,Jérôme Saint-Martin Nanoscale and Microscale Heat Transfer (NMHT) VIII, Jun 2024, Girona, Spain Communication dans un congrès hal-04740290v1
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination Alessandro Pilotto,Adel M’foukh,Philippe Dollfus,Jérôme Saint-Martin,Marco Pala 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.301-304, ⟨10.23919/SISPAD57422.2023.10319610⟩ Communication dans un congrès hal-04333397v1
Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials Junbum Park,Marco Pala,Jérôme Saint-Matin 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.21-24, ⟨10.23919/SISPAD57422.2023.10319605⟩ Communication dans un congrès hal-04333399v1
Full Band Monte Carlo simulation of transient and stationary thermal transport in GaAs porous nanostructures based on ab initio calculation Junbum Park,Lorenzo Paulatto,Marco Pala,Jérôme Saint-Martin International Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain Communication dans un congrès hal-04740333v1
Full Band Monte Carlo simulation of 2D h-BN nanostructure for phonon transport based on ab initio calculation Junbum Park,Lorenzo Paulatto,Marco Pala,Jérôme Saint-Martin 17th International Conference on Phonon Scattering in Condensed Matter, Phonons 2023, Jul 2023, Paris, France Communication dans un congrès hal-04740306v1
Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations Rémi Helleboid,Jérôme Saint-Martin,Marco Pala,Philippe Dollfus,Gabriel Mugnyet al. 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.369-372, ⟨10.23919/SISPAD57422.2023.10319557⟩ Communication dans un congrès hal-04333398v1
Automatic optimization of doping profile for high performance Single-Photon Avalanche Diodes Helleboid Rémi,Jérôme Saint-Martin,Marco Pala,Philippe Dollfus,Rideau Deniset al. International Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain Communication dans un congrès hal-04740345v1
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts D. Lizzit,P. Khakbaz,F. Driussi,Marco Pala,D. Esseni 68th IEEE International Electron Devices Meeting (IEDM 2022), Dec 2022, San Francisco, CA, United States. pp.28.2.1-28.2.4, ⟨10.1109/IEDM45625.2022.10019449⟩ Communication dans un congrès hal-04123805v1
Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability Denis Rideau,Y. Oussaiti,J. Grebot,R. Helleboid,A. Lopezet al. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States Communication dans un congrès hal-03374008v1
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations Yanjie Shao,Marco G. Pala,David Esseni,Jesus del Alamo 2021 IEEE 67th International Electron Devices Meeting (IEDM), Dec 2021, San Francisco, United States. pp.32.1.1-32.1.4, ⟨10.1109/IEDM19574.2021.9720540⟩ Communication dans un congrès hal-03793958v1
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability Marco G. Pala,D. Rideau,Y. Oussaiti,J. Grebot,R. Helleboidet al. 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.293-296, ⟨10.1109/SISPAD54002.2021.9592567⟩ Communication dans un congrès hal-03445562v1
Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics Thibauld Cazimajou,Marco Pala,Jérôme Saint-Martin,Denis Rideau,Philippe Dollfus 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea Communication dans un congrès hal-03254209v1
Full Band Monte Carlo simulation of phonon transfer at interfaces N.D. Le,B. Davier,P. Dollfus,Marco G. Pala,A. Bournelet al. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩ Communication dans un congrès hal-03029928v1
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism Marco G. Pala,David Esseni 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.3-6, ⟨10.23919/SISPAD49475.2020.9241641⟩ Communication dans un congrès hal-03029922v1
Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors Marco Pala,D. Esseni 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870406⟩ Communication dans un congrès hal-02404574v1
Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices Marco Pala,Oves Badami,David Esseni 2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.33.1.1-33.1.4, ⟨10.1109/IEDM.2018.8614613⟩ Communication dans un congrès hal-02350969v1
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures Denis Rideau,Gabriel Mugny,Marco Pala,David Esseni 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2018, Austin, France. pp.224-227, ⟨10.1109/SISPAD.2018.8551706⟩ Communication dans un congrès hal-02350996v1
High performance WTe&lt;inf&gt;2&lt;/inf&gt;-MoS&lt;inf&gt;2&lt;/inf&gt;in-plane heterojunction Tunnel Field Effect Transistors Marco G. Pala,Jean Choukroun,Shiang Fang,Efthimios Kaxiras,Philippe Dollfus 48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩ Communication dans un congrès hal-02351006v1
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits D. Esseni,O. Badami,F. Driussi,D. Lizzit,Marco G. Palaet al. 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Mar 2018, Kobe, Japan. pp.236-238, ⟨10.1109/EDTM.2018.8421501⟩ Communication dans un congrès hal-02351100v1
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations Marco G. Pala,Oves Badami,David Esseni 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, France. pp.35.1.1-35.1.4, ⟨10.1109/IEDM.2017.8268498⟩ Communication dans un congrès hal-02351115v1
Van der Waals tunnel field effect transistors with misoriented layers Alessandro Cresti,Jiang Cao,Marco Pala Graphene 2017, Mar 2017, Barcelona, Spain Communication dans un congrès hal-01966757v1
Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs Demetrio Logoteta,Nicolas Cavassilas,Marco Pala,Alessandro Cresti,Marc Bescond International Workshop on Computational Nanotechnology (IWCN 2017), Jun 2017, Windermere, United Kingdom Communication dans un congrès hal-01966686v1
Van der Waals tunnel field effect transistors with lateral momentum mismatch Jiang Cao,Marco Pala,Alessandro Cresti 2D@Grenoble, Fondation Nanosciences, Apr 2017, Grenoble, France Communication dans un congrès hal-01966731v1
Local stress engineering for the optimization of p-GaN gate HEMTs power devices T Cosnier,L Lucci,A. Torres,M. Pala 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2017, Kamakura, Japan Communication dans un congrès hal-01643379v1
VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study C. Grillet,M. Pala 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.108-111, ⟨10.1109/ULIS.2016.7440064⟩ Communication dans un congrès hal-02063643v1
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes Y. Oussaiti,D. Rideau,J.R. Manouvrier,V. Quenette,H. Wehbe-Alauseet al. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.145-148, ⟨10.23919/SISPAD49475.2020.9241648⟩ Communication dans un congrès hal-03029924v1
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD G. Mugny,F.G. Pereira,D. Rideau,F. Triozon,Y.M. Niquetet al. 2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩ Communication dans un congrès hal-02065220v1
A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges Jiang Cao,Demetrio Logoteta,Sibel Ozkaya,Blanca Biel,Alessandro Crestiet al. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.12.5.1 - 12.5.4, ⟨10.1109/IEDM.2015.7409684⟩ Communication dans un congrès hal-01967913v1
Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs Marco G. Pala,Barbara de Salvo,P. Morin,Gérard Ghibaudo GRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France Communication dans un congrès hal-02068476v1
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier Luca Lucci,Jean-Charles Barbé,Marco Pala 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.128-131, ⟨10.1109/SISPAD.2015.7292275⟩ Communication dans un congrès hal-02067223v1
Quantum simulation of tunnel field-effect transistors based on a vertical heterojunction of 2D transition metal dichalcogenides Jiang Cao,Marco Pala,Alessandro Cresti,David Esseni Annual meeting of the GDRi Graphene and Nanotubes, Nov 2015, Aussois, France Communication dans un congrès hal-01966736v1
Quantum simulation of tunnel field-effect transistors based on transition metal dichalcogenides Jiang Cao,Marco G. Pala,Alessandro Cresti,David Esseni Graphene 2015, Mar 2015, Bilbao, Spain Communication dans un congrès hal-01968207v1
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals Jiang Cao,Marco Pala,Alessandro Cresti,David Esseni 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.245-248, ⟨10.1109/ULIS.2015.7063819⟩ Communication dans un congrès hal-01966809v1
Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region F. Pereira,D. Rideau,O. Nier,C. Tavernier,F. Triozonet al. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.49-52, ⟨10.1109/ULIS.2015.7063770⟩ Communication dans un congrès hal-02063611v1
(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs Marco Pala,David Esseni 225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States Communication dans un congrès hal-02065948v1
Impact of Surface Roughness on Thermoelectric Properties of Silicon Nanotubes Tomofumi Zushi,Alessandro Cresti,Marco G. Pala,Keisaku Yamada,Takanobu Watanabe 61st JSAP (Japan Society of Applied Physics) Spring Meeting, Mar 2014, Tokyo, Japan Communication dans un congrès hal-01966677v1
Quantum simulation of a 2-D heterojunction interlayer tunneling field effect transistor Jiang Cao,Marco Pala,Alessandro Cresti,David Esseni 2nd Workshop Graphene in Grenoble, Fondation Nanosciences, Nov 2014, Grenoble, France Communication dans un congrès hal-01966721v1
Quantum simulation of self-heating effects in rough Si nanowire FETs Marco Pala,Alessandro Cresti 17th International Workshop on Computational Electronics (IWCE 2014), Jun 2014, Paris, France. pp.1-3, ⟨10.1109/IWCE.2014.6865827⟩ Communication dans un congrès hal-01966681v1
(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects David Esseni,Marco Pala,Revelant A.,P. Palestri,M. Liet al. 226th ECS and SMEQ Joint International Meeting: SiGe,Ge and Related Compounds: Materials, Processing and Devices 6, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico Communication dans un congrès hal-02066006v1
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies B. Desalvo,P. Morin,M. Pala,G. Ghibaudo,O. Rozeauet al. 2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.7.2.1-7.2.4, ⟨10.1109/IEDM.2014.7047002⟩ Communication dans un congrès hal-02049421v1
Design Options for Hetero-Junction Tunnel FETs with High on Current and Steep Sub-VT Slope S. Brocard,M.G. Pala,D. Esseni IEDM 2013, Dec 2013, Washington, United States. pp.128-131, ⟨10.1109/IEDM.2013.6724567⟩ Communication dans un congrès hal-01074151v1
Scanning gate spectroscopy of a quantum Hall island near a quantum point contact B. Hackens,F. Martins,S. Faniel,V. Bayot,B. Rosenowet al. American Physical Society March Meeting, APS March Meeting 2013, 2013, Baltimore, MD, United States Communication dans un congrès hal-00811773v1
Nanowires applications in the More Moore/More-Than-Moore perspectives M. Mouis,J. W. Lee,M. Mongillo,M. Pala,A. Crestiet al. E-MRS E-MRS 2013 Spring Meeting, Symposium K: Physics and technology of advanced extra functionality CMOS-based devices, May 2013, Strasbourg, France Communication dans un congrès hal-01020753v1
Coherence and Coulomb blockade in ultra-small quantum Hall islands F. Martins,S. Faniel,Hermann Sellier,Serge Huant,M.G. Palaet al. 16ème Forum des Microscopies à Sondes Locales, 2013, Spa, Belgium. papier OC23, 41-42 Communication dans un congrès hal-00956273v1
Towards self-powered systems: using nanostructures to harvest ambient energy Gustavo Ardila,Anne Kaminski-Cachopo,M. Pala,Alessandro Cresti,L. Montèset al. 2nd Ukrainian-French Seminar "Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics", Apr 2013, Kyiv, Ukraine Communication dans un congrès hal-01182195v1
A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks H. Sellier,M. Pala,S. Baltazar,P. Liu,B. Hackenset al. 16th International Conference on Modulated Semiconductor Structures, MSS-16, 2013, Wroclaw, Poland Communication dans un congrès hal-00878505v1
Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring B. Hackens,F. Martins,S. Faniel,V. Bayot,M. Palaet al. American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States Communication dans un congrès hal-00579035v1
Imaging quantum Hall Coulomb islands inside a quantum ring F. Martins,B. Hackens,S. Faniel,V. Bayot,M. Palaet al. American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States Communication dans un congrès hal-00579036v1
A Study for Thermoelectric Properties of SiC nanowires H. Choi,M. Pala,L. Latu-Romain,Edwige Bano International Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States Communication dans un congrès hal-00650068v1
A Study for Thermoelectric Properties of Si nanowires J.H. Choi,M. Pala,L. Latu-Romain,Edwige Bano European Korean Congress, 2011, Paris, France Communication dans un congrès hal-00650059v1
Non-equilibrium transport through coupled quantum dot-metallic island systems M.G. Pala Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter (DPG Meeting), Mar 2010, Dresden, Italy Communication dans un congrès hal-00604752v1
Elastic and inelastic scattering in SiNWs M.G. Pala 1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Oct 2010, Kiev, Ukraine Communication dans un congrès hal-00604930v1
Influence of ionized impurities in Silicon Nanowire Transistors M. Bescond,M. Lannoo,L. Raymond,Fabienne Michelini,M. G. Pala Proceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, 2009, Beijing, China. pp.137-140 Communication dans un congrès hal-00603874v1
Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri,R. Clerc,F. Calmon,M. Pala,A. Poncetet al. Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94 Communication dans un congrès hal-00604239v1
Full-3D real-space treatment of surface roughness in double gate MOSFETs C. Buran,M. G. Pala,S. Poli,M. Mouis Int. Conference on Ultimate Integration of Silicon, Aachen,, Mar 2009, Germany. pp.47-50 Communication dans un congrès hal-00604232v1
Etude du transport dans les composants ultracourts sur SOI C. Buran,M.G. Pala,S. Poli,M. Mouis Journées Transport balistique du GDR Nanoélectronique, May 2009, Orsay, France Communication dans un congrès hal-00604956v1
Simulation full-3D real-space NEGF du transport et du magnétotransport dans le FET à nanofil de Silicium C. Buran,M.G. Pala,M. Bescond,M. Mouis JNRDM 2009,, May 2009, Lyon, France Communication dans un congrès hal-00604958v1
Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes E. Buccafurri,A. Medjahdi,F. Calmon,R. Clerc,M. Palaet al. European Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241 Communication dans un congrès hal-00603719v1
Full-3D real-space simulation of surface-roughness effects in double gate MOSFETs C. Buran,M. G. Pala,S. Poli,M. Mouis Proceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, May 2009, Beijing, China. pp.309-312 Communication dans un congrès hal-00603871v1
Scanning-Gate Microscopy images the electronic LDOS inside nanostructures S. Huant,F. Martins,M.G. Pala,B. Hackens,H. Sellieret al. 11th International Conference on Non-contact Atomic Force Microscopy: NCAFM-2008, Madrid, September 16-19, 2008, Sep 2008, Madrid, Spain Communication dans un congrès hal-00392555v1
Local Density of States from Scanning Gate Microscopy M.G. Pala,B. Hackens,F. Martins,H. Sellier,V. Bayotet al. Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter, Berlin, Feb 2008, Berlin, Germany Communication dans un congrès hal-00392549v1
Full 3D real-space NEGF simulation of transport and magnetotransport in Si-Nanowire FETs C. Buran,M.G. Pala,M. Mouis,M. Bescond,M. Micheliniet al. Fringe workshop ESSDERC 08, Edinburgh, UK, Sep 2008, Edinburgh, Ireland Communication dans un congrès hal-00392550v1
Imaging the electron local density of states inside buried semiconductor quantum rings B. Hackens,F. Martins,M.G. Pala,H. Sellier,T. Ouisseet al. 29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008, Jul 2008, Rio de Janeiro, Brazil Communication dans un congrès hal-00392551v1
Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri,R. Clerc,F. Calmon,M. Pala,A. Poncetet al. ISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France Communication dans un congrès hal-00391921v1
Quantum transport in nanowire metal-oxide-semiconductor transistors: influence of dielectric confinement M. Bescond,M. Lannoo,Fabienne Michelini,N. Cavassilas,M.G. Pala 29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008 to be published in AIP Conference Proceedings Series, Jul 2008, -, France Communication dans un congrès hal-00392554v1

Chapitre d'ouvrage (6)

Tunnel Field‐Effect Transistors Based on III–V Semiconductors Marco Pala Beyond‐CMOS: State of the Art and Trends, 1, Wiley, 2023, ⟨10.1002/9781394228713.ch1⟩ Chapitre d'ouvrage hal-04333402v1
Nanowire Devices Gérard Ghibaudo,Sylvain Barraud,Mikaël Cassé,Xin Peng Wang,Guo Qiang Loet al. Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩ Chapitre d'ouvrage hal-02051240v1
Scanning Probe Electronic Imaging of Lithographically Patterned Quantum Rings F. Martins,Hermann Sellier,M. Pala,B. Hackens,V. Bayotet al. Ed. by V. Fomin. Physics of Quantum Rings, pp.107-121, 2014, Nanoscience and Nanotechnology, 978-3-642-39196-5. ⟨10.1007/978-3-642-39197-2⟩ Chapitre d'ouvrage hal-02049163v1
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy Gustavo Ardila,Anne Kaminski-Cachopo,Marco Pala,Alessandro Cresti,Laurent Montèset al. A. Nazarov; F. Balestra; V. Kilchytska; D. Flandre. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting, Springer International Publishing, pp.223-240, 2014, 978-3-319-08803-7. ⟨10.1007/978-3-319-08804-4_11⟩ Chapitre d'ouvrage hal-01966696v1
Beyond CMOS Giuseppe Iannaccone,Gianluca Fiori,Susanna Reggiani,Marco Pala Nanoscale CMOS, 1, Wiley, 2013, ⟨10.1002/9781118621523.ch12⟩ Chapitre d'ouvrage hal-04333408v1
Quantum Simulation of Silicon-Nanowire FETs Marco Pala Semiconductor-On-Insulator Materials for Nanoelectronics Applications, Springer Berlin Heidelberg, pp.237-249, 2011, Engineering Materials, ⟨10.1007/978-3-642-15868-1_13⟩ Chapitre d'ouvrage istex hal-04333409v1

Autre publication scientifique (1)

Simulation of van der Waals vertical tunnel field-effect transistors Jiang Cao,Marco Pala,Alessandro Cresti 2017, pp.18 Autre publication scientifique hal-02008463v1

Pré-publication, Document de travail (1)

Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation Philippe Dollfus,Jérôme Saint-Martin,Rémi Helleboid,Thibauld Cazimajou,Alessandro Pilottoet al. 2025 Pré-publication, Document de travail hal-05426318v1