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Martin HYTCH

11
Documents

Présentation

Dr Martin Hytch develops quantitative electron microscopy techniques for materials science applications. After carrying out his thesis at the University of Cambridge on the quantitative analysis of high-resolution images (HRTEM) of compound semiconductors in 1991, he moved to France to work at the CECM-CNRS in Paris, where he subsequently joined the CNRS in 1995. He is notably the inventor of the Geometric Phase Analysis (GPA) technique for the determination of strain from high-resolution images and has applied the technique to a wide range of materials problems and nanostructures. He moved to the CEMES-CNRS in Toulouse in 2004 to work on aberration-corrected HRTEM and electron holography. In 2007, he invented the new technique of dark-field electron holography for the measurement of strain and in 2008, he was recipient of the prestigious European Microscopy Award (FEI-EMA), awarded every 4 years at the European Microscopy Congress. Between 2009 and 2014, he headed the nanomaterials group at the CEMES (30 permanent staff). He has authored or coauthored over 130 scientific papers and given 70 invited talks at conferences and workshops.

Publications

sylvie-schamm-chardon

Epitaxial BaTiO3 on Silicon and Silicon Germanium: Nanoscale Characterization, Ferroelectricity and Integration into TiN-Gated Devices

Lucie Mazet , S.M. Yang , M.M. Frank , E.A. Cartier , H. Miyazoe
MRS Spring 2016, Mar 2016, Phœnix, États-Unis
Communication dans un congrès hal-02083658v1

Complex oxides on semiconductors for nanoelectronic applications

Lucie Mazet , Romain Bachelet , Guillaume Saint-Girons , Martin Hÿtch , Sylvie Schamm-Chardon
TMS 2015 144th Annual Meeting, 2015, Orlando, Fl, USA, United States
Communication dans un congrès hal-01489569v1

Growth parameters and tetragonality at the nanoscale of MBE epitaxial BaTiO3 films on Si

Sylvie Schamm-Chardon , Cesar Magen , R. Guzman , Lucie Mazet , Robin Cours
EMRS Spring 2015, May 2015, Lille, France
Communication dans un congrès hal-02081622v1

Molecular beam epitaxy of ferroelectric complex oxides on silicon

Catherine Dubourdieu , Lucie Mazet , S. Yang , Robin Cours , Romain Bachelet
19th Conference on "Insulating Films on Semiconductors (INFOS), Jul 2015, Udine, Italy
Communication dans un congrès hal-01489594v1

Strain and Cation Stoichiometry in Epitaxial BaTiO3 Thin Films Grown on Silicon

Sylvie Schamm-Chardon , C. Magen , R. Guzman , Lucie Mazet , Robin Cours
MRS 2015 Fall Meeting, Nov 2015, Boston, United States
Communication dans un congrès hal-01965445v1

Epitaxial growth by molecular beam epitaxy of ferroelectric BaTiO3 on silicon

Lucie Mazet , Romain Bachelet , Guillaume Saint-Girons , M. Yang , S. Kalinin
Workshop “Les oxydes pour l’optique et la photonique”, 2014, Meudon, France
Communication dans un congrès hal-01489873v1

Epitaxy of ferroelectric complex oxides on semiconductors for field-effect devices

Lucie Mazet , Romain Bachelet , Guillaume Saint-Girons , Lamis Louahadj , David Albertini
10th International Conference on Physics of Advanced Materials, Sep 2014, Iasi, Romania
Communication dans un congrès hal-01965375v1

Epitaxial growth of BaTiO3 on semiconductor substrates by molecular beam epitaxy for ferroelectric devices

Lucie Mazet , Romain Bachelet , Lamis Louahadj , Claude Botella , M. Frank
EMRS 2014 Fall meeting, Sep 2014, Warsaw, Poland
Communication dans un congrès hal-01489916v1

Epitaxial growth of BaTiO3 on Si and SOI by molecular beam epitaxy for ferroelectric applications

Lucie Mazet , Romain Bachelet , Lamis Louahadj , Sylvie Schamm-Chardon , Martin Hÿtch
ISAF 2014, May 2014, Penn State University in State College, PA, USA, United States
Communication dans un congrès hal-01489874v1

Local tetragonality of epitaxial BaTiO3 thin films on Si for ferroelectric applications

Sylvie Schamm-Chardon , Thibaud Denneulin , Martin Hÿtch , Lucie Mazet , Romain Bachelet
IMC2014 - 18th International Microscopy congress, Sep 2014, Prague, Czech Republic
Communication dans un congrès hal-01489876v1

Monolithic integration of epitaxial BaTiO3 on Si and SiGe for ferroelectric devices

Lucie Mazet , Romain Bachelet , Guillaume Saint-Girons , David Albertini , Brice Gautier
AVS 61st International Symposium, 2014, Baltimore, USA, United States
Communication dans un congrès hal-01490296v1