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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF ApplicationsMaterials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩
Article dans une revue
hal-03741438v1
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Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applicationsInternational Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
Communication dans un congrès
hal-04037282v1
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