Mihai Lazar

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Publications

HDR (1)

Technologie pour l’intégration de composants semiconducteurs à large bande interdite Mihai Lazar Energie électrique. INSA de Lyon; Université Claude Bernard Lyon 1, 2018 HDR tel-01817587v1

Article dans une revue (98)

Integration of bright color centers into arrays of silicon carbide nanopillars Enora Vuillermet,N. Bercu,S. Kochtcheev,M. Lazar Applied Physics Letters, 2025, Defects in Solids for Quantum Technologies, 127 (2), pp.024003. ⟨10.1063/5.0255612⟩ Article dans une revue hal-05169989v1
Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Brenda Fosso-Sob,Dominique Planson,Pascal Bevilacqua,Camille Sonnevilleet al. Key Engineering Materials, 2025, 1021, pp.1-6. ⟨10.4028/p-T0Vjdb⟩ Article dans une revue hal-05293324v1
Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes Dominique Planson,Camille Sonneville,Pascal Bevilacqua,Pierre Brosselard,Mihai Lazaret al. Key Engineering Materials, 2025, 1023, pp.1-6. ⟨10.4028/p-0v5tyE⟩ Article dans une revue hal-05293312v1
Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Ralph Makhoul,Nour Beydoun,Abdelhakim Bourennane,Luong Viet Phung,Frédéric Richardeauet al. Solid State Phenomena, 2024, 358, pp.23-30. ⟨10.4028/p-pzTJ4o⟩ Article dans une revue hal-04697223v1
Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices Enora Marion Vuillermet,Kuan Ting Wu,Anaël Sédilot,Regis Deturche,Nicolas Bercuet al. Solid State Phenomena, 2024, 358, pp.13-21. ⟨10.4028/p-sUIlP5⟩ Article dans une revue hal-04211449v1
Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Dominique Planson,Dominique Tournier,Pascal Bevilacqua,Camille Sonnevilleet al. Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩ Article dans une revue hal-04677726v1
Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing Fulvio Mazzamuto,Zeinab Chehadi,Fabien Roze,Mathieu Opprecht,Atul Guptaet al. Solid State Phenomena, 2024, 359, pp.21-28. ⟨10.4028/p-7T0Wv7⟩ Article dans une revue hal-04796908v1
Infrared photoinduced force near-field spectroscopy of silicon carbide Kuan-Ting Wu,Youssef El-Helou,Elise Usureau,Enora Vuillermet,Michel Kazanet al. Applied Surface Science, 2024, 684, pp.161798. ⟨10.1016/j.apsusc.2024.161798⟩ Article dans une revue hal-04796916v1
Cathodoluminescence Characterization of Point Defects Generated through Ion Implantations in 4H-SiC Enora Marion Vuillermet,Nicolas Bercu,Florence Etienne,Mihai Lazar Coatings, 2023, 13 (6), pp.992. ⟨10.3390/coatings13060992⟩ Article dans une revue hal-04170818v1
High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields Elise Usureau,Enora Marion Vuillermet,Mihai Lazar,Aurore Andrieux,Alexandre Jacquemot Solid State Phenomena, 2023, 343, pp.21-28. ⟨10.4028/p-w0ryrj⟩ Article dans une revue hal-04170908v1
Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing Enora Marion Vuillermet,Elise Usureau,Mihai Lazar,Regis Deturche Materials Science Forum, 2023, 1089, pp.37-44. ⟨10.4028/p-lu37l6⟩ Article dans une revue hal-04170897v1
SiC Plasma and Electrochemical Etching for Integrated Technology Processes Nour Beydoun,Mihai Lazar,Xavier Gassmann Romanian Journal of Information Science and Technology, 2023, 2023 (2), pp.238-246. ⟨10.59277/ROMJIST.2023.2.10⟩ Article dans une revue hal-04303004v1
Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target Ali Ammar,Mihai Lazar,Bertrand Vergne,Sigo Scharnholz,Luong Viêt Phunget al. Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩ Article dans une revue hal-04276812v1
KPFM -Raman spectroscopy coupled technique for the characterization of wide bandgap semiconductor devices Nicolas Bercu,Mihai Lazar,Olivier Simonetti,Pierre-Michel Adam,Mélanie Brouillardet al. Materials Science Forum, 2022, 1062, pp.330-334. ⟨10.4028/p-c35702⟩ Article dans une revue hal-03702846v1
Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis Alina Muravitskaya,Anna Rumyantseva,Atse Julien Eric N’dohi,Camille Sonneville,Dominique Plansonet al. Materials Science Forum, 2022, 1062, pp.293-297. ⟨10.4028/p-5p0qg2⟩ Article dans une revue hal-03702821v1
Development of SiC reliability study tool Tanguy Phulpin,Alexandre Jaffré,J Alvarez,M. Lazar Solid State Electronics Letters, 2019, 1 (2), pp.131-139. ⟨10.1016/j.ssel.2020.01.002⟩ Article dans une revue hal-02486075v1
Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC Jean-François Mogniotte,Christophe Raynaud,Mihai Lazar,Loïc Michel Romanian Journal of Information Science and Technology, 2019, 22 (2), pp.103-110 Article dans une revue hal-02405784v1
Silicon Carbide Technology of MESFET-Based Power Integrated Circuits Jean-François Mogniotte,Dominique Tournier,Christophe Raynaud,Mihai Lazar,Dominique Plansonet al. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩ Article dans une revue hal-01864533v1
Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections Julien Pezard,Véronique Soulière,Mihai Lazar,Naoufel Haddour,François Buretet al. Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩ Article dans une revue hal-01644735v1
SiC integrated circuits for smart power converter J F Mogniotte,Mihai Lazar,Christophe Raynaud,Dominique Planson,B Allard Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399 Article dans une revue hal-04277111v1
Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p&lt;sup&gt;++&lt;/sup&gt; Emitters Selsabil Sejil,Loïc Lalouat,Mihai Lazar,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩ Article dans une revue hal-01648360v1
Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions Gabriel Ferro,Selsabil Sejil,Mihai Lazar,D. Carole,C. Brylinskiet al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩ Article dans une revue hal-01615190v1
Optimization of VLS Growth Process for 4H-SiC P/N Junctions Selsabil Sejil,Mihai Lazar,Frédéric Cayrel,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩ Article dans une revue hal-01388031v1
4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer Fatima Issa,Laurent Ottaviani,Dora Szalkai,Lvermeer Vermeeren,Vanessa Vervischet al. IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1976 - 1980. ⟨10.1109/TNS.2016.2565439⟩ Article dans une revue hal-01389631v1
Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications Thi Thanh Huyen Nguyen,Mihai Lazar,Jean-Louis Augé,Hervé Morel,Luong Viet Phunget al. Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩ Article dans une revue hal-01391838v1
A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase Tony Abi-Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Christophe Raynaudet al. IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩ Article dans une revue hal-01387992v1
4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer Fatima Issa,Laurent Ottaviani,Dora Szalkai,Lvermeer Vermeeren,Vanessa Vervischet al. IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1976-1980. ⟨10.1109/TNS.2016.2565439⟩ Article dans une revue hal-03350099v1
Realization of a graphene gate field effect transistor for electrochemical detection and biosensors Julien Pézard,Mihai Lazar,Naoufel Haddour,Claude Botella,Pascale Royet al. Thin Solid Films, 2016, ⟨10.1016/j.tsf.2016.04.031⟩ Article dans une revue istex hal-01389621v1
Improvements in Realizing 4H-SiC Thermal Neutron Detectors F. Issa,V. Vervisch,L. Ottaviani,D. Szalkai,L. Vermeerenet al. EPJ Web of Conferences, 2016, 106, ⟨10.1051/epjconf/201610605004⟩ Article dans une revue hal-01391841v1
Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti&lt;sub&gt;3&lt;/sub&gt;SiC&lt;sub&gt;2&lt;/sub&gt; Phase Tony Abi-Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Christophe Raynaudet al. Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩ Article dans une revue hal-01388027v1
Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature D. Szalkai,R. Ferone,F. Issa,A. Klix,Mihai Lazaret al. IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1491 - 1498. ⟨10.1109/TNS.2016.2522921⟩ Article dans une revue hal-01389627v1
Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation Fatima Issa,Laurent Ottaviani,Vanessa Vervisch,Dora Szalkai,Ludo Vermeerenet al. Materials Science Forum, 2015, 821-823, pp.875 - 878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩ Article dans une revue hal-01391850v1
Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing Tony Abi-Tannous,Maher Soueidan,G. Ferro,Mihai Lazar,B. Touryet al. Applied Surface Science, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩ Article dans une revue istex hal-01391845v1
VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures Selsabil Sejil,Farah Laariedh,Mihai Lazar,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩ Article dans une revue hal-01387983v1
Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors Julien Pezard,Jérémy Lhuillier,Zakarya El-Friach,Véronique Soulière,Bertrand Vilquinet al. Materials Science Forum, 2015, 821-823, pp.941 - 944. ⟨10.4028/www.scientific.net/MSF.821-823.941⟩ Article dans une revue hal-01391855v1
2D Electric field imagery in 4H-SiC power diodes using OBIC technique Hassan Hamad,Pascal Bevilacqua,Dominique Planson,Christophe Raynaud,Dominique Tournieret al. European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩ Article dans une revue istex hal-01387989v1
P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices Mihai Lazar,Selsabil Sejil,L. Lalouat,Christophe Raynaud,D. Caroleet al. Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342 Article dans une revue hal-01626119v1
4H-SiC P&lt;sup&gt;+&lt;/sup&gt;N UV Photodiodes for Space Applications B. Berenguier,Laurent Ottaviani,Stéphane Biondo,Mihai Lazar,Frédéric Milesiet al. Materials Science Forum, 2015, 821-823, pp.644 - 647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩ Article dans une revue hal-01391847v1
The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing Mihai Lazar,Farah Laariedh,Pierre Cremillieu,Dominique Planson,Jean-Louis Leclercq Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩ Article dans une revue hal-01391844v1
A Study on the Chemistry of Epitaxial Ti&lt;sub&gt;3&lt;/sub&gt;SiC&lt;sub&gt;2&lt;/sub&gt; Formation on 4H-SiC Using Al-Ti Annealing Tony Abi-Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Berangère Touryet al. Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩ Article dans une revue hal-01391858v1
4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes,Antonis Stavrinidis,George Konstantinidis,Maria Kayambaki,Konstantin Vamvoukakiset al. Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩ Article dans une revue hal-01391852v1
Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts Nicolas Thierry-Jebali,Mihai Lazar,A. Vo-Ha,D. Carole,V. Soulièreet al. Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩ Article dans une revue hal-01987147v1
Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron F. Issa,V. Vervisch,L. Ottaviani,D. Szalkai,L. Vermeerenet al. IEEE Transactions on Nuclear Science, 2014, 61 (4), pp.2105-2111. ⟨10.1109/TNS.2014.2320943⟩ Article dans une revue hal-03350134v1
Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport Arthur Vo-Ha,Mickael Rebaud,Mihai Lazar,Alexandre Tallaire,Véronique Soulièreet al. Materials Science Forum, 2014, 806, pp.33 - 37. ⟨10.4028/www.scientific.net/MSF.806.33⟩ Article dans une revue hal-01391865v1
4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation B. Bérenguier,L. Ottaviani,S. Biondo,O. Palais,M. Lazaret al. MRS Online Proceedings Library, 2014, 1693, ⟨10.1557/opl.2014.565⟩ Article dans une revue hal-03350144v1
Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport Davy Carole,Arthur Vo-Ha,Anthony Thomas,Mihai Lazar,Nicolas Thierry-Jebaliet al. Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩ Article dans une revue hal-00803058v1
Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport N. Thierry-Jebali,A. Vo-Ha,D. Carole,Mihai Lazar,Gabriel Ferroet al. Applied Physics Letters, 2013, 102 (21), ⟨10.1063/1.4809570⟩ Article dans une revue hal-01627796v1
The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC Farah Laariedh,Mihai Lazar,P. Cremillieu,J. Penuelas,J-L Leclercqet al. Semiconductor Science and Technology, 2013, 28 (4), ⟨10.1088/0268-1242/28/4/045007⟩ Article dans une revue hal-01627844v1
p-Doped SiC Growth on Diamond Substrate by VLS Transport Arthur Vo Ha,Davy Carole,Mihai Lazar,Dominique Tournier,François Cauwetet al. Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩ Article dans une revue hal-01627777v1
Electrical Characterization of PiN Diodes with p&lt;sup&gt;+&lt;/sup&gt; Layer Selectively Grown by VLS Transport Nicolas Thierry-Jebali,Mihai Lazar,Arthur Vo Ha,Davy Carole,Véronique Soulièreet al. Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩ Article dans une revue hal-01627792v1
Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase A. Vo-Ha,D. Carole,Mihai Lazar,Dominique Tournier,F. Cauwetet al. Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩ Article dans une revue istex hal-02863887v1
Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport A. Vo-Ha,D. Carole,Mihai Lazar,Dominique Tournier,F. Cauwetet al. Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩ Article dans une revue istex hal-01627830v1
Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes Nicolas Thierry-Jebali,Jawad Hassan,Mihai Lazar,Dominique Planson,Edwige Banoet al. Applied Physics Letters, 2012, 101 (22), 222111, 4 p. ⟨10.1063/1.4768440⟩ Article dans une revue hal-00769905v1
4H-SiC P&lt;sup&gt;+&lt;/sup&gt;N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes Stéphane Biondo,Laurent Ottaviani,Mihai Lazar,Dominique Planson,Julian Duchaineet al. Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩ Article dans une revue hal-02275699v1
Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate Jean Lorenzzi,Romain Esteve,Mihai Lazar,Dominique Tournier,Davy Caroleet al. Materials Science Forum, 2012, 717-720, pp.165-168. ⟨10.4028/www.scientific.net/MSF.717-720.165⟩ Article dans une revue hal-00803063v1
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen,Christophe Raynaud,Mihai Lazar,Gontran Pâques,Sigo Scharnholzet al. Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩ Article dans une revue hal-00803059v1
Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour Stéphane Biondo,Mihai Lazar,Laurent Ottaviani,Wilfried Vervisch,Olivier Palaiset al. Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩ Article dans une revue hal-04050522v1
Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC Farah Laariedh,Mihai Lazar,Pierre Cremillieu,Jean -Louis Leclercq,Dominique Planson Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩ Article dans une revue hal-04050541v1
600 V PiN diodes fabricated using on-axis 4H silicon carbide Gabriel Civrac,Farah Laariedh,Nicolas Thierry-Jebali,Mihai Lazar,Dominique Plansonet al. Materials Science Forum, 2012 Article dans une revue hal-02126341v1
Buried selective growth of p-doped SiC by VLS epitaxy Davy Carole,Stéphane Berckmans,Arthur Vo-Ha,Mihai Lazar,Dominique Tournieret al. Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩ Article dans une revue hal-00803061v1
SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements Mihai Lazar,François Jomard,Duy Minh M Nguyen,Christophe Raynaud,Gontran Pâqueset al. Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩ Article dans une revue hal-02166414v1
4H-silicon carbide thin junction based ultraviolet photodetectors Stéphane Biondo,Mihai Lazar,Laurent Ottaviani,Wilfried Vervisch,Vincent Le Borgneet al. Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩ Article dans une revue istex hal-00747356v1
Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State Mihai Lazar,Fabrice Enoch,Farah Laariedh,Dominique Planson,Pierre Brosselard Materials Science Forum, 2011, 679-680, pp.477-480. ⟨10.4028/www.scientific.net/MSF.679-680.477⟩ Article dans une revue hal-04343373v1
Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates Elias Haddad,Christian Martin,Charles Joubert,Bruno Allard,Maher Soueidanet al. Advanced Materials Research, 2011, 324, pp.294-297. ⟨10.4028/www.scientific.net/AMR.324.294⟩ Article dans une revue hal-00672240v1
Experimental determination of impact ionization coefficients in 4H-SiC Duy Minh Nguyen,Christophe Raynaud,Nicolas Dheilly,Mihai Lazar,Dominique Tournieret al. Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩ Article dans une revue istex hal-00661429v1
State of the art of high temperature power electronics Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacquaet al. Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩ Article dans une revue istex hal-00597432v1
3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt J. Lorenzzi,Mihai Lazar,Dominique Tournier,N. Jegenyes,D. Caroleet al. Crystal Growth & Design, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩ Article dans une revue hal-00786365v1
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier,Pierre Brosselard,Christophe Raynaud,Mihai Lazar,Hervé Morelet al. Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩ Article dans une revue hal-00799902v1
Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage Sombel Diaham,Marie-Laure Locatelli,Thierry Lebey,Christophe Raynaud,Mihai Lazaret al. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.695-698. ⟨10.4028/www.scientific.net/MSF.615-617.695⟩ Article dans une revue hal-04368204v1
Process Optimization for High Temperature SiC Lateral Devices Maher Soueidan,Mihai Lazar,Duy Minh Nguyen,Dominique Tournier,Christophe Raynaudet al. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩ Article dans une revue hal-04368215v1
Optical beam induced current measurements: principles and applications to SiC device characterization Christophe Raynaud,Duy Minh Nguyen,Nicolas Dheilly,Dominique Tournier,Pierre Brosselardet al. Physica Status Solidi A (applications and materials science), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩ Article dans une revue istex hal-00398971v1
Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC Duy Minh Nguyen,Christophe Raynaud,Mihai Lazar,Heu Vang,Dominique Planson Materials Science Forum, 2008, Materials Science Forum, 600-603, pp.639-642. ⟨10.4028/www.scientific.net/MSF.600-603.639⟩ Article dans une revue hal-00391560v1
Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode Heu Vang,Sigo Scharnholz,Christophe Raynaud,Mihai Lazar,Gontran Pâqueset al. Materials Science Forum, 2008, MATERIALS SCIENCE FORUM, 600-603, pp.1011-1014. ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩ Article dans une revue hal-04368150v1
1.2 kV pin diodes with SiCrystal epiwafer Heu Vang,Christophe Raynaud,Pierre Brosselard,Mihai Lazar,Pierre Cremillieuet al. Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩ Article dans une revue hal-04369138v1
Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts Maher Soueidan,Gabriel Ferro,Christophe Jacquier,Philippe Godignon,J. Pezoldtet al. Diamond and Related Materials, 2007, 16, pp.37-45. ⟨10.1016/j.diamond.2006.03.015⟩ Article dans une revue istex hal-00188186v1
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Erwan Oliviero,Mihai Lazar,Heu Vang,Christiane Dubois,Pierre Cremillieuet al. Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.611-614. ⟨10.4028/www.scientific.net/MSF.556-557.611⟩ Article dans une revue hal-04369331v1
Edge termination strategies for a 4 kV 4H-SiC thyristor Pierre Brosselard,Dominique Planson,Sigo Scharnholz,Christophe Raynaud,V. Zorngiebelet al. Solid-State Electronics, 2006, 50 (7-8), pp.1183-1188 Article dans une revue hal-00140104v1
Ni-Al ohmic contact to p-type 4H-SiC Heu Vang,Mihai Lazar,Pierre Brosselard,Christophe Raynaud,Pierre Cremilleuet al. Superlattices and Microstructures, 2006, 40 (4-6), pp.626-631 Article dans une revue hal-00141426v1
Composants de puissance en SiC. Etat de l'art Dominique Planson,Christophe Raynaud,Pierre Brosselard,Dominique Bergogne,Mihai Lazaret al. European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611 Article dans une revue hal-04371563v1
Deep SiC etching with RIE Mihai Lazar,Heu Vang,Pierre Brosselard,Christophe Raynaud,Pierre Cremilleuet al. Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩ Article dans une revue hal-00179458v1
P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar,Christophe Jacquier,Christiane Dubois,Christophe Raynaud,Gabriel Ferroet al. Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩ Article dans une revue hal-04362494v1
A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery Pierre Brosselard,Thierry Bouchet,Dominique Planson,Sigo Scharnholz,Gontran Pâqueset al. Materials Science Forum, 2005, 483-485, pp.1005-1008. ⟨10.4028/www.scientific.net/MSF.483-485.1005⟩ Article dans une revue hal-04345858v1
Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement Bruno Allard,Gérard Coquery,Laurent Dupont,Zoubir Khatir,Mihai Lazaret al. Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩ Article dans une revue hal-01702019v1
OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension Christophe Raynaud,S. Wang,Dominique Planson,Mihai Lazar,Jean-Pierre Chante Diamond and Related Materials, 2004, 13 (9), pp.1697-1703 Article dans une revue hal-00140107v1
Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor Pierre Brosselard,Volker Zorngiebel,Dominique Planson,Sigo Scharnholz,Jean-Pierre Chanteet al. Materials Science Forum, 2004, 457-460, pp.1129-1132. ⟨10.4028/www.scientific.net/MSF.457-460.1129⟩ Article dans une revue hal-04092535v1
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study Mihai Lazar,G.C. Cardinali,Christophe Raynaud,Antonella Poggi,Dominique Plansonet al. Materials Science Forum, 2004, 457-460, pp.1025-1028. ⟨10.4028/www.scientific.net/MSF.457-460.1025⟩ Article dans une revue hal-04345830v1
Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers Mihai Lazar,Christophe Raynaud,Dominique Planson,Jean-Pierre Chante,Marie-Laure Locatelliet al. Journal of Applied Physics, 2003, 94 (5), pp.2992-2998 Article dans une revue hal-00140110v1
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension S.R. Wang,Christophe Raynaud,Dominique Planson,Mihai Lazar,Jean-Pierre Chante Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩ Article dans une revue hal-04091213v1
Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization K. Isoird,Mihai Lazar,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. Materials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩ Article dans une revue hal-02151720v1
Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments Laurent Ottaviani,Mihai Lazar,Marie-Laure Locatelli,Dominique Planson,Jean-Pierre Chanteet al. Materials Science and Engineering: B, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩ Article dans une revue istex hal-00140116v1
Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements Christophe Raynaud,Karine Isoird,Mihai Lazar,Cm Johnson,N. Wright Journal of Applied Physics, 2002, 91 (12), pp.9841-9847 Article dans une revue hal-00141477v1
Annealing Studies of Al-implanted 6H-SiC in an Induction Furnace L. Ottaviani,M. Lazar,Marie-Laure Locatelli,J.P. Chante,V. Heeraet al. Materials Science and Engineering: B, 2002, 91-92, pp.325-328 Article dans une revue hal-00084105v1
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Mihai Lazar,Christophe Raynaud,Dominique Planson,Marie-Laure Locatelli,K. Isoirdet al. Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩ Article dans une revue hal-02151714v1
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩ Article dans une revue hal-02151710v1
Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings Laurent Ottaviani,Mihai Lazar,Marie-Laure Locatelli,Yves Monteil,V. Heeraet al. Applied Surface Science, 2001, 184 (1-4), pp.330-335 Article dans une revue hal-00141498v1
Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird,Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaudet al. Applied Surface Science, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩ Article dans une revue istex hal-00140118v1
Experimental characterization of a 4H-SiC high voltage current limiting device F. Nallet,Dominique Planson,Philippe Godignon,Marie-Laure Locatelli,Mihai Lazaret al. Applied Surface Science, 2001, 184 (1-4), pp.404-407 Article dans une revue hal-00140117v1
Improved Annealing Process for 6H-SiC p&lt;sup&gt;+&lt;/sup&gt;-n Junction Creation by Al Implantation Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Dominique Planson,Bruno Canutet al. Materials Science Forum, 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩ Article dans une revue hal-02275720v1

Brevet (2)

CREATION D’UNE FENETRE DE SORTIE DE RAYONNEMENT POUR UN COMPOSANT PHOTOEMETTEUR Mihai Lazar,Dominique Planson,Hervé Morel,Gilles Lerondel,Komla Dunyo Nomenyo France, N° de brevet: FR2201067. 2022 Brevet hal-03702862v1
FABRICATION D’UN COMPOSANT EMETTEUR DE RAYONNEMENT A PARTIR D’UN SUBSTRAT DE CARBURE DE SILICIUM Mihai Lazar,Dominique Planson,Hervé Morel,Christophe Couteau France, N° de brevet: FR2201064. 2022 Brevet hal-03702870v1

Communication dans un congrès (106)

Correlative Near-Field Characterizations with KPFM, sMIM and SCM to Characterize the Geometry of a N-Channel Failed SiC JFET Rosine Coq Germanicus,Mahima Chaudhary,Enora Vuillermet,Mihai Lazar ISTFA 2025, Nov 2025, Pasadena, France. pp.404-410, ⟨10.31399/asm.cp.istfa2025p0404⟩ Communication dans un congrès hal-05401738v1
SiC plasma etching technology processes for power and optoelectronic devices Mihai Lazar,Nour Beydoun,Frédéric Marty,Elise Usureau,Enora Marion Vuillermetet al. PESM 2024, IMEC Belgium, Jun 2024, Leuven (BE), Belgium Communication dans un congrès hal-04797018v1
Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers Enora Vuillermet,Serguei Kochtcheev,Elise Usureau,Nicolas Bercu,Mihai Lazar International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States Communication dans un congrès hal-04796859v1
Formation of Highly Doped and Defect-Free P-Type Junctions in SiC by Using High Temperature Implants and UV-Laser Annealing Louis Thuries,Zeinab Chehadi,Fulvio Mazzamuto,Mathieu Opprecht,Sébastien Kerdilèset al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.712-713 Communication dans un congrès hal-04796873v1
Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Brenda Fosso-Sob,Dominique Planson,Pascal Bevilacqua,Camille Sonnevilleet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128 Communication dans un congrès hal-04677764v1
La gravure plasma, une étape critique dans la technologie SiC. Mécanismes physico-chimiques et applications Mihai Lazar,Nour Beydoun,Frédéric Marty,Elise Usureau,Enora Vuillermetet al. Journées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France Communication dans un congrès hal-04799422v1
Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes Dominique Planson,Camille Sonneville,Pascal Bevilacqua,Pierre Brosselard,Mihai Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592 Communication dans un congrès hal-04680725v1
Integration of micro-fabricated thermal flow rate sensors in a 4H-SiC substrate passivated by a MPECVD-grown diamond layer Enora Vuillermet,Lionel Rousseau,Georges Hamaoui,Nizar Ben Moussa,E. Nefzaouiet al. The 34th International Conference on Diamond and Carbon Materials (ICDCM 2024), Sep 2024, Dresde, Germany Communication dans un congrès hal-05374887v1
Integrated technology developed in SiC and other wide-bandgap semiconductors for harsh environment power electronics, sensors and quantum nanophononics. Mihai Lazar Technological Horizons in Micro and Nanoelectronics. Contributions of Diaspora to the Integration of Romania in International Projects - IPCEI, PNRR, CHIPS ACT - April 11-13, 2023, Romanian Academy, Apr 2023, Timisoara, Romania Communication dans un congrès hal-04304662v1
Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiC Enora Marion Vuillermet,R. Haddadi,N. Bercu,L. Ottaviani,L. Giraudetet al. IEEE 2023 International semiconductor conference (CAS) - 46th edition, NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES - IMT Bucharest; IEEE – Electron Devices Society, Oct 2023, Sinaia (Romania), Romania. pp.135-138, ⟨10.1109/CAS59036.2023.10303651⟩ Communication dans un congrès hal-04304522v1
Caractérisation du dopage de dispositifs de puissance en 4H-SiC par KPFM et spectroscopie µ-Raman Anaël Sédilot,Enora Marion Vuillermet,Régis Deturche,Elise Usureau,Jérémie Béalet al. 24ème Forum des microscopies à sonde locale, Apr 2023, Obernai, France Communication dans un congrès hal-04171760v1
Complementary SiC technology for integrated power and optoelectronic devices Mihai Lazar IEEE 2023 International semiconductor conference (CAS) - 46th edition, Oct 2023, Sinaia (Romania), Romania Communication dans un congrès hal-04796961v1
Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Dominique Planson,D. Tournier,Pascal Bevilacqua,Camille Sonnevilleet al. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04222211v1
Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology Ralph Makhoul,Nour Beydoun,Abdelhakim Bourennane,Luong Viet Phung,M. Lazaret al. 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩ Communication dans un congrès hal-04203163v1
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration Ralph Makhoul,Abdelhakim Bourennane,Luong Viêt Phung,Frédéric Richardeau,Mihai Lazaret al. IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩ Communication dans un congrès hal-04147862v1
Surface nano-structuration of 4H-SiC by controlled high-temperature annealing Enora Marion Vuillermet,Elise Usureau,Régis Deturche,Mihai Lazar The 6th International Workshop on Ultraviolet Materials and Devices (IWUMD 2023), Jun 2023, Metz, France Communication dans un congrès hal-04171629v1
Recrystallization of thin 4H-SiC films deposited by PVD techniques, a way for new emerging fields Enora Marion Vuillermet,Elise Usureau,François Jomard,Léa Le Joncour,Aurore Andrieuxet al. C'Nano 2023: The Nanoscience meeting, Centre national de compétences en Nanosciences, Mar 2023, Poitiers, France Communication dans un congrès hal-04171807v1
Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Ralph Makhoul,Nour Beydoun,Abdelhakim Bourennane,Luong Viêt Phung,Frédéric Richardeauet al. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04221605v1
High quality single crystal recrystallization of thin 4H-SiC films deposed by PVD techniques, a way for new emerging fields Elise Usureau,Enora Vuillermet,Mihai Lazar,Aurore Andrieux,Alexandre Jacquemot 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland Communication dans un congrès hal-03856621v1
Enhancement of light extraction in 4H silicon carbide by nanostructuring the surface with high temperature annealing Enora Vuillermet,Elise Usureau,Mihai Lazar,Régis Deturche 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland Communication dans un congrès hal-03856668v1
SiC structural characterization by non destructive near-field microscopy techniques Kuan-Ting Wu,Enora Vuillermet,Elise Usureau,Youssef El-Helou,Michel Kazanet al. 2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.73-76, ⟨10.1109/CAS56377.2022.9934358⟩ Communication dans un congrès hal-03856554v1
Surface engineering for SiC etching with Ni electroplating masks Nour Beydoun,Mihai Lazar,Xavier Gassmann 2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.119-122, ⟨10.1109/CAS56377.2022.9934701⟩ Communication dans un congrès hal-04303085v1
Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT Ali Ammar,Mihai Lazar,Bertrand Vergne,Sigo Scharnholz,Luong Viêt Phunget al. 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ Communication dans un congrès hal-03856578v1
KPFM - Raman spectroscopy coupled technique for the characterization of wide bandgap semiconductor devices Nicolas Bercu,Mihai Lazar,Olivier Simonetti,Pierre-Michel Adam,Mélanie Brouillardet al. 13th European Conference on Silicon Carbide and Related Materials( ECSCRM2020-2021 ), Oct 2021, Tours, France Communication dans un congrès hal-03702799v1
Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology Mathilde Brocheton,Mihai Lazar 13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020-2021 ), Oct 2021, Tours, France Communication dans un congrès hal-03702808v1
Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis Alina Muravitskaya,Anna Rumyantseva,Atse Julien Eric N’dohi,Camille Sonneville,Dominique Plansonet al. ECSCRM2020-2021, Oct 2021, Tours, France Communication dans un congrès hal-03410757v1
SiC tools for reliability study Tanguy Phulpin,Alexandre Jaffré,José Alvarez,Mihai Lazar 42nd edition of International Semiconductor Conference - CAS 2019, Oct 2019, Sinaia, Romania. ⟨10.1109/SMICND.2019.8923664⟩ Communication dans un congrès hal-02378321v1
SiC lateral Schottky diode technology for integrated smart power converter Jean-François Mogniotte,Christophe Raynaud,Mihai Lazar,Bruno Allard,Dominique Planson 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩ Communication dans un congrès hal-01864545v1
First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments Jean-François Mogniotte,Mihai Lazar,Christophe Raynaud,Bruno Allard CAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩ Communication dans un congrès hal-01646319v1
Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections Julien Pezard,V. Souliere,Mihai Lazar,Naoufel Haddour,François Buretet al. ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52 Communication dans un congrès hal-02138738v1
Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy Selsabil Sejil,Loïc Lalouat,Mihai Lazar,Davy Carole,Christian Brylinskiet al. ECSCRM'16, Sep 2016, Halkidiki, Greece Communication dans un congrès hal-02138729v1
Graphene Field Effect Transistors on SiC for High Speed and Bio-sensing Applications Julien Pézard,Mihai Lazar,Bertrand Vilquin,Pedro Rojo Romeo,Naoufel Haddouret al. JNTE (Journées Nationales des Technologies Emergentes), Nov 2015, Ecully, France Communication dans un congrès hal-01946338v1
Vertical termination filled with adequate dielectric for SiC devices in HVDC applications T. Nguyen-Bui,Mihai Lazar,Jean-Louis Augé,Hervé Morel,L. Phunget al. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138529v1
Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase Tony Abi-Tannous,Maher Soueidan,G. Ferro,Mihai Lazar,Christophe Raynaudet al. ICSCRM, Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138520v1
4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes,Antonis Stavrinidis,George Konstantinidis,Maria Kayambaki,Konstantinos Vamvoukakiset al. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75 Communication dans un congrès hal-02133681v1
Realization of a single layer graphene field effect transistor J. Pezard,Jérémy Lhuillier,Z. El-Friakh,V. Souliere,Pedro Rojo Romeoet al. EMRS Spring Meeting, 2015, Lille, France Communication dans un congrès hal-01489358v1
4H-SiC P-N junctions realized by VLS for JFET lateral structures Selsabil Sejil,Farah Laariedh,Mihai Lazar,Davy Carole,Christian Brylinskiet al. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 Communication dans un congrès hal-02133686v1
Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport Nicolas Thierry-Jebali,Arthur Vo-Ha,Davy Carole,Mihai Lazar,Gabriel Ferroet al. HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩ Communication dans un congrès hal-01391861v1
Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions Selsabil Sejil,Mihai Lazar,Davy Carole,Christian Brylinski,Dominique Plansonet al. Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States Communication dans un congrès hal-02428659v1
Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices Mihai Lazar,Davy Carole,Christophe Raynaud,Gabriel Ferro,Selsabil Sejilet al. CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ Communication dans un congrès hal-01388019v1
Graphene on 4H-SiC for terahertz transistors and ferroelectric non-volatile memories J. Pezard,Jérémy Lhuillier,Z. El-Friakh,V. Souliere,Pédro Rojo Romeoet al. CSCRM, 2014, Grenoble, France Communication dans un congrès hal-01489926v1
Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC Hassan Hamad,Pascal Bevilacqua,Dominique Planson,Christophe Raynaud,Dominique Tournieret al. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065307v1
On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing Tony Abi Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Bérangère Touryet al. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63 Communication dans un congrès hal-02428741v1
3C-SiC Seeded Growth on Diamond Substrate by VLS Transport Arthur Vo-Ha,Mickael Rebaud,Davy Carole,Mihai Lazar,Alexandre Tallaireet al. ICSCRM 2013, Sep 2013, Miyazaki, Japan. pp.234-237, ⟨10.4028/www.scientific.net/MSF.778-780.234⟩ Communication dans un congrès hal-02875458v1
Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects Dominique Planson,Pierre Brosselard,Karine Isoird,Mihai Lazar,Luong Viêt Phunget al. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩ Communication dans un congrès hal-01388002v1
Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX Tony Abi Tannous,Maher Soueidan,Gabriel Ferro,Berangere Toury-Pierre,Mihai Lazaret al. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065327v1
Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport N Thierry-Jebali,Mihai Lazar,A Vo-Ha,D Carole,V Soulièreet al. International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan Communication dans un congrès hal-04011693v1
p-type SiC growth on diamond substrate by VLS Transport Arthur Vo-Ha,Davy Carole,Mihai Lazar,D. Tournier,François Cauwetet al. ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p Communication dans un congrès hal-04423301v1
Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport Davy Carole,Arthur Vo-Ha,Anthony Thomas,Mihai Lazar,Nicolas Thierry Thierry-Jebaliet al. ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04362529v1
4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes Stéphane Biondo,Laurent Ottaviani,Mihai Lazar,Dominique Planson,Julian Duchaineet al. CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747301v1
Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour Stéphane Biondo,Mihai Lazar,Laurent Ottaviani,Wilfried Vervisch,Olivier Palaiset al. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩ Communication dans un congrès hal-00661511v1
Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport Nicolas Thierry-Jebali,Mihai Lazar,Arthur Vo-Ha,Davy Carole,Véronique Soulièreet al. Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04366810v1
Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC Farah Laariedh,Mihai Lazar,Pierre Cremilleu,Jean-Louis Leclercq,Dominique Planson HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩ Communication dans un congrès hal-00661507v1
Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate Jean Lorenzzi,Romain Esteve,Mihai Lazar,Dominique Tournier,Davy Caroleet al. CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747299v1
SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements Mihai Lazar,François Jomard,Duy Minh Nguyen,Christophe Raynaud,Gontran Pâqueset al. ICSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747300v1
Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate Jean Lorenzzi,Nicoletta Jegenyes,Mihai Lazar,Dominique Tournier,Davy Caroleet al. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩ Communication dans un congrès hal-00747669v1
600 V PiN diodes fabricated using on-axis 4H silicon carbide Gabriel Civrac,Farah Laariedh,Nicolas Thierry-Jebali,Mihai Lazar,Dominique Plansonet al. International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩ Communication dans un congrès hal-00747295v1
Buried selective growth of p-doped SiC by VLS epitaxy Davy Carole,Stéphane Berckmans,Arthur Vo-Ha,Mihai Lazar,Dominique Tournieret al. CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747294v1
Investigation of 3C-SiC lateral growth on 4H-SiC MESAs Jean Lorenzzi,Nikoletta Jegenyes,Mihai Lazar,Dominique Tournier,Francois Cauwetet al. CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩ Communication dans un congrès hal-00786369v1
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen,Christophe Raynaud,Mihai Lazar,Gontran Pâques,Sigo Scharnholzet al. CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747298v1
Réalisation de contact ohmique sur SiC-4H type P Farah Laariedh,Mihai Lazar,Pierre Cremillieu,Jean -Louis Leclercq,Dominique Planson JNRDM2011, May 2011, Paris, France Communication dans un congrès hal-04560246v1
Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates Elias Haddad,Christian Martin,Charles Joubert,Bruno Allard,Maher Soueidanet al. CIMA, Mar 2011, Beyrouth, Lebanon. pp.Tu-P9 Communication dans un congrès hal-00787193v1
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier,Pierre Brosselard,Christophe Raynaud,Mihai Lazar,Hervé Morelet al. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD Communication dans un congrès hal-00661500v1
High-temperature behavior of SiC power diodes Cyril Buttay,Christophe Raynaud,Hervé Morel,Mihai Lazar,Gabriel Civracet al. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD Communication dans un congrès hal-00629225v1
Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State Mihai Lazar,Fabrice Enoch,Farah Laariedh,Dominique Planson,Pierre Brosselard CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩ Communication dans un congrès hal-00661443v1
Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization Cyril Buttay,Amandine Masson,Jianfeng Li,Mark C. Johnson,Mihai Lazaret al. HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7 Communication dans un congrès hal-00672619v1
Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics Laurent Ottaviani,Stéphane Biondo,Mihai Lazar,Wilfried Vervisch,Julian Duchaineet al. WOCSDICE, May 2011, Catania, Italy. pp.181 Communication dans un congrès hal-00661522v1
Process Optimization for High Temperature SiC Lateral Devices Maher Soueidan,Mihai Lazar,Duy Minh Nguyen,Dominique Tournier,Christophe Raynaudet al. CSCRM, Sep 2008, Barcelone, Spain. pp.585-588, ⟨10.4028/www.scientific.net/MSF.615-617.585⟩ Communication dans un congrès hal-00391358v1
State of the art of High Temperature Power Electronics Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacquaet al. Microtherm, Jun 2009, Lodz, Poland. pp.8-17 Communication dans un congrès hal-00413349v1
Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage Sombel Diaham,Marie-Laure Locatelli,Thierry Lebey,Christophe Raynaud,Mihai Lazaret al. CSCRM, Sep 2008, Barcelone, Spain. pp.695-698, ⟨10.4028/www.scientific.net/MSF.615-617.695⟩ Communication dans un congrès hal-00391472v1
SiC Power Semiconductor Devices for new Applications in Power Electronics Dominique Planson,Dominique Tournier,Pascal Bevilacqua,Nicolas Dheilly,Hervé Morelet al. 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ Communication dans un congrès hal-00373016v1
Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters Dominique Bergogne,Hervé Morel,Dominique Tournier,Bruno Allard,Dominique Plansonet al. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 Communication dans un congrès hal-00372982v1
Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode Heu Vang,Sigo Scharnholz,Christophe Raynaud,Mihai Lazar,Gontran Pâqueset al. CSCRM, Oct 2007, Otsu, Japan. pp.1011-1014, ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩ Communication dans un congrès hal-00391553v1
Contact ohmique de faible résistivité sur SiC-4H dopé type-P M Soueidan,Mihai Lazar,D. Tournier,Dominique Planson,Christophe Raynaudet al. 4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France Communication dans un congrès hal-04606381v1
Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC D M Nguyen,Christophe Raynaud,Mihai Lazar,H Vang,Dominique Planson ICSCRM'2007, Oct 2007, Otsu, Japan Communication dans un congrès hal-02961607v1
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Erwan Oliviero,Mihai Lazar,Heu Vang,Christiane Dubois,Pierre Cremilleuet al. CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩ Communication dans un congrès hal-00368931v1
1.2 kV pin diodes with SiCrystal epiwafer Heu Vang,Christophe Raynaud,Pierre Brosselard,Mihai Lazar,Pierre Cremilleuet al. CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩ Communication dans un congrès hal-00358819v1
High energy N+ ion implantation in 4H–SiC Erwan Oliviero,Mihai Lazar,A. Gardon,C. Peaucelle,A. Perratet al. 15th International Conference on Ion Beam Modification of Materials, Sep 2006, Taormina, Italy. pp.265-269, ⟨10.1016/j.nimb.2007.01.256⟩ Communication dans un congrès istex in2p3-00170330v1
Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts Gabriel Ferro,Maher Soueidan,Christophe Jacquier,Philippe Godignon,Th Staudenet al. CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.275-278, ⟨10.4028/www.scientific.net/MSF.527-529.275⟩ Communication dans un congrès hal-00391581v1
Towards an integrated inverter based on lateral JFET SiC J. Gié,Mihai Lazar,Dominique Planson,Dominique Bergogne,Pascal Bevilacquaet al. 4th CIPS, Jun 2006, Naples, Italy. pp.171-176 Communication dans un congrès hal-00413390v1
Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal Heu Vang,Christophe Raynaud,Pierre Brosselard,Mihai Lazar,Pierre Cremillieuet al. 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04618792v1
Deep SiC etching with RIE Mihai Lazar,Heu Vang,Pierre Brosselard,Christophe Raynaud,Pierre Cremilleuet al. E-MRS 2006, May 2006, Nice, France. pp.3886392 Communication dans un congrès hal-03305997v1
Ni-Al Ohmic contact to p-type 4H-SiC Heu Vang,Mihai Lazar,Pierre Brosselard,Christophe Raynaud,Pierre Cremilleuet al. 2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩ Communication dans un congrès hal-03316263v1
Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés Johnny Gié,Mihai Lazar,Pierre Brosselard,Dominique Planson,Christophe Raynaud 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04619604v1
Gravure RIE profonde du SiC pour la réalisation de composants de puissance Heu Vang,T. Morel,F. Chaboud,Pierre Brosselard,Pierre Cremillieuet al. 3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France Communication dans un congrès hal-04620248v1
P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar,C Jacquier,Ch Dubois,Christophe Raynaud,G Ferroet al. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953086v1
SiC-based current limiter devices Jean-Pierre Chante,Dominique Tournier,Dominique Planson,Christophe Raynaud,Mihai Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩ Communication dans un congrès hal-04032970v1
HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES Dominique Planson,Marie-Laure Locatelli,Mihai Lazar,Christophe Raynaud,Jean-Pierre Chanteet al. 10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France Communication dans un congrès hal-04621819v1
Conception d'un transistor JFET 5 kV en SiC-4H Pierre Brosselard,Dominique Planson,Léa Di Cioccio,Thierry Billon,Sigo Scharnholzet al. 10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France Communication dans un congrès hal-04621465v1
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Pierre Brosselard,Thierry Bouchet,Dominique Planson,Sigo Scharnholz,Gontran Pâqueset al. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953080v1
Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension Christophe Raynaud,M. Lazar,Dominique Planson,J.-P Chante,Z. Sassi International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02498145v1
Electrothermal simulations of silicon carbide current limiting devices Dominique Planson,J.P. Chante,M. Lazar,P. Brosselard,Christophe Raynaudet al. 2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩ Communication dans un congrès hal-02498210v1
The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study. M Lazar,G Cardinali,C Raynaud,A Poggi,Dominique Plansonet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France Communication dans un congrès hal-02941715v1
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Pierre Brosselard,Volker Zorngiebel,Dominique Planson,Sigo Scharnholz,J.-P Chanteet al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503456v1
Silicon Carbide specific components for power electronics system protection J.-P Chante,Dominique Planson,Christophe Raynaud,Marie-Laure Locatelli,M. Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503449v1
Design and simulation of a planar anode GTO thyristor on SiC Pierre Brosselard,Dominique Planson,Sigo Scharnholz,V. Zorngiebel,Mihai Lazaret al. CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩ Communication dans un congrès hal-00410085v1
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC Roberta Nipoti,Francesco Moscatelli,Andrea Scorzoni,Antonella Poggi,Gian Carlo Cardinaliet al. 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩ Communication dans un congrès hal-02485106v1
OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension S.R. Wang,Christophe Raynaud,Dominique Planson,Mihai Lazar,Jean-Pierre Chante European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02464381v1
Characterization of a 4H-SiC High Power Density Controlled Current Limiter Dominique Tournier,Xavier Jorda,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02458130v1
Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird,Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaudet al. European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France Communication dans un congrès hal-03712596v1
4H-SiC bipolar power diodes realized by ion implantation M. Lazar,Dominique Planson,K. Isoird,Marie-Laure Locatelli,Christophe Raynaudet al. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩ Communication dans un congrès hal-02145397v1
A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects M. Lazar,Christophe Raynaud,Dominique Planson,Marie-Laure Locatelli,K. Isoirdet al. ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02476227v1
Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing Mihai Lazar,Karine Isoird,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaudet al. 43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States Communication dans un congrès hal-02275712v1
Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization K Isoird,M Lazar,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975956v1
Experimental characterization of a 4H-SiC high voltage current limiting device Franck Nallet,Dominique Planson,Philippe Godignon,Marie-Laure Locatelli,Mihai Lazaret al. European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France Communication dans un congrès hal-03714731v1
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72 Communication dans un congrès hal-02151711v1

Poster de conférence (5)

Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers Enora Vuillermet,Serguei Kochtcheev,Elise Usureau,Nicolas Bercu,Mihai Lazar Journées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France Poster de conférence hal-04618701v1
Coupled non-destructive methods, Scanning Electron Microscopy, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices Enora Vuillermet,Kuan-Ting Wu,Anaël Sédilot,Régis Deturche,Nicolas Bercuet al. 5e édition des French Photonics Days, Oct 2023, Strasboug, France Poster de conférence hal-04618679v1
Characterization of silicon vacancies and divacancies in hexagonal silicon carbide formed by nitrogen and aluminum ion implantation Enora Marion Vuillermet,Nicolas Bercu,Florence Etienne,Mihai Lazar,Louis Giraudet C'Nano 2023: The Nanoscience meeting, Mar 2023, Poitiers, France. Poster de conférence hal-04171800v1
Recrystallisation of thin 4H-SiC films deposed by PVD Elise Usureau,Enora Marion Vuillermet,Mihai Lazar,Aurore Andrieux,Alexandre Jacquemot 19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland. Poster de conférence hal-04171214v1
Nanostructuring of 4H-SiC by high temperature annealing Enora Marion Vuillermet,Elise Usureau,Mihai Lazar,Regis Deturche 19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland. Poster de conférence hal-04171193v1

Chapitre d'ouvrage (1)

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation Christophe Raynaud,Duy Minh Nguyen,Nicolas Dheilly,Dominique Tournier,Pierre Brosselardet al. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009 Chapitre d'ouvrage hal-00661529v1

Pré-publication, Document de travail (1)

Integration of bright color centers into arrays of silicon carbide nanopillars Enora Vuillermet,Nicolas Bercu,Serguei Kochtcheev,Mihai Lazar 2025 Pré-publication, Document de travail hal-04878667v1