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SiC plasma etching technology processes for power and optoelectronic devices
Mihai Lazar
,
Nour Beydoun
,
Frédéric Marty
,
Elise Usureau
,
Enora Marion Vuillermet
et al.
PESM 2024, IMEC Belgium, Jun 2024, Leuven (BE), Belgium
Communication dans un congrès
hal-04797018
v1
|
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Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers
Enora Vuillermet
,
Serguei Kochtcheev
,
Elise Usureau
,
Nicolas Bercu
,
Mihai Lazar
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States
Communication dans un congrès
hal-04796859
v1
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor
Pierre Brosselard
,
Brenda Fosso-Sob
,
Dominique Planson
,
Pascal Bevilacqua
,
Camille Sonneville
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128
Communication dans un congrès
hal-04677764
v1
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Formation of Highly Doped and Defect-Free P-Type Junctions in SiC by Using High Temperature Implants and UV-Laser Annealing
Louis Thuries
,
Zeinab Chehadi
,
Fulvio Mazzamuto
,
Mathieu Opprecht
,
Sébastien Kerdilès
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.712-713
Communication dans un congrès
hal-04796873
v1
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La gravure plasma, une étape critique dans la technologie SiC. Mécanismes physico-chimiques et applications
Mihai Lazar
,
Nour Beydoun
,
Frédéric Marty
,
Elise Usureau
,
Enora Vuillermet
et al.
Journées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France
Communication dans un congrès
hal-04799422
v1
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Dominique Planson
,
Camille Sonneville
,
Pascal Bevilacqua
,
Pierre Brosselard
,
Mihai Lazar
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592
Communication dans un congrès
hal-04680725
v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Ralph Makhoul
,
Nour Beydoun
,
Abdelhakim Bourennane
,
Luong Viêt Phung
,
Frédéric Richardeau
et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04221605
v1
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Recrystallization of thin 4H-SiC films deposited by PVD techniques, a way for new emerging fields
Enora Marion Vuillermet
,
Elise Usureau
,
François Jomard
,
Léa Le Joncour
,
Aurore Andrieux
et al.
C'Nano 2023: The Nanoscience meeting, Centre national de compétences en Nanosciences, Mar 2023, Poitiers, France
Communication dans un congrès
hal-04171807
v1
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Integrated technology developed in SiC and other wide-bandgap semiconductors for harsh environment power electronics, sensors and quantum nanophononics.
Mihai Lazar
Technological Horizons in Micro and Nanoelectronics. Contributions of Diaspora to the Integration of Romania in International Projects - IPCEI, PNRR, CHIPS ACT - April 11-13, 2023, Romanian Academy, Apr 2023, Timisoara, Romania
Communication dans un congrès
hal-04304662
v1
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Caractérisation du dopage de dispositifs de puissance en 4H-SiC par KPFM et spectroscopie µ-Raman
Anaël Sédilot
,
Enora Marion Vuillermet
,
Régis Deturche
,
Elise Usureau
,
Jérémie Béal
et al.
24ème Forum des microscopies à sonde locale, Apr 2023, Obernai, France
Communication dans un congrès
hal-04171760
v1
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Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiC
Enora Marion Vuillermet
,
R. Haddadi
,
N. Bercu
,
L. Ottaviani
,
L. Giraudet
et al.
IEEE 2023 International semiconductor conference (CAS) - 46th edition, NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES - IMT Bucharest; IEEE – Electron Devices Society, Oct 2023, Sinaia (Romania), Romania. pp.135-138, ⟨10.1109/CAS59036.2023.10303651⟩
Communication dans un congrès
hal-04304522
v1
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Complementary SiC technology for integrated power and optoelectronic devices
Mihai Lazar
IEEE 2023 International semiconductor conference (CAS) - 46th edition, Oct 2023, Sinaia (Romania), Romania
Communication dans un congrès
hal-04796961
v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Pierre Brosselard
,
Dominique Planson
,
D. Tournier
,
Pascal Bevilacqua
,
Camille Sonneville
et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04222211
v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration
Ralph Makhoul
,
Abdelhakim Bourennane
,
Luong Viêt Phung
,
Frédéric Richardeau
,
Mihai Lazar
et al.
IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
hal-04147862
v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology
Ralph Makhoul
,
Nour Beydoun
,
Abdelhakim Bourennane
,
Luong Viet Phung
,
M. Lazar
et al.
Communication dans un congrès
hal-04203163
v1
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Surface nano-structuration of 4H-SiC by controlled high-temperature annealing
Enora Marion Vuillermet
,
Elise Usureau
,
Régis Deturche
,
Mihai Lazar
The 6th International Workshop on Ultraviolet Materials and Devices (IWUMD 2023), Jun 2023, Metz, France
Communication dans un congrès
hal-04171629
v1
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SiC structural characterization by non destructive near-field microscopy techniques
Kuan-Ting Wu
,
Enora Vuillermet
,
Elise Usureau
,
Youssef El-Helou
,
Michel Kazan
et al.
Communication dans un congrès
hal-03856554
v1
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Enhancement of light extraction in 4H silicon carbide by nanostructuring the surface with high temperature annealing
Enora Vuillermet
,
Elise Usureau
,
Mihai Lazar
,
Régis Deturche
19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland
Communication dans un congrès
hal-03856668
v1
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High quality single crystal recrystallization of thin 4H-SiC films deposed by PVD techniques, a way for new emerging fields
Elise Usureau
,
Enora Vuillermet
,
Mihai Lazar
,
Aurore Andrieux
,
Alexandre Jacquemot
19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland
Communication dans un congrès
hal-03856621
v1
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Surface engineering for SiC etching with Ni electroplating masks
Nour Beydoun
,
Mihai Lazar
,
Xavier Gassmann
Communication dans un congrès
hal-04303085
v1
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Surface engineering for SiC etching with Ni electroplating masks
Nour Beydoun
,
Mihai Lazar
,
Xavier Gassmann
Communication dans un congrès
hal-03856454
v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT
Ali Ammar
,
Mihai Lazar
,
Bertrand Vergne
,
Sigo Scharnholz
,
Luong Viêt Phung
et al.
Communication dans un congrès
hal-03856578
v1
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis
Alina Muravitskaya
,
Anna Rumyantseva
,
Atse Julien Eric N’dohi
,
Camille Sonneville
,
Dominique Planson
et al.
ECSCRM2020-2021, Oct 2021, Tours, France
Communication dans un congrès
hal-03410757
v1
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KPFM - Raman spectroscopy coupled technique for the characterization of wide bandgap semiconductor devices
Nicolas Bercu
,
Mihai Lazar
,
Olivier Simonetti
,
Pierre-Michel Adam
,
Mélanie Brouillard
et al.
13th European Conference on Silicon Carbide and Related Materials( ECSCRM2020-2021 ), Oct 2021, Tours, France
Communication dans un congrès
hal-03702799
v1
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Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology
Mathilde Brocheton
,
Mihai Lazar
13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020-2021 ), Oct 2021, Tours, France
Communication dans un congrès
hal-03702808
v1
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SiC tools for reliability study
Tanguy Phulpin
,
Alexandre Jaffré
,
José Alvarez
,
Mihai Lazar
Communication dans un congrès
hal-02378321
v1
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SiC lateral Schottky diode technology for integrated smart power converter
Jean-François Mogniotte
,
Christophe Raynaud
,
Mihai Lazar
,
Bruno Allard
,
Dominique Planson
Communication dans un congrès
hal-01864545
v1
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First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments
Jean-François Mogniotte
,
Mihai Lazar
,
Christophe Raynaud
,
Bruno Allard
Communication dans un congrès
hal-01646319
v1
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections
Julien Pezard
,
V. Souliere
,
Mihai Lazar
,
Naoufel Haddour
,
François Buret
et al.
ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Communication dans un congrès
hal-02138738
v1
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy
Selsabil Sejil
,
Loïc Lalouat
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
et al.
ECSCRM'16, Sep 2016, Halkidiki, Greece
Communication dans un congrès
hal-02138729
v1
|
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions
Selsabil Sejil
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
,
Dominique Planson
et al.
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Communication dans un congrès
hal-02428659
v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices
Mihai Lazar
,
Davy Carole
,
Christophe Raynaud
,
Gabriel Ferro
,
Selsabil Sejil
et al.
Communication dans un congrès
hal-01388019
v1
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|
Graphene Field Effect Transistors on SiC for High Speed and Bio-sensing Applications
Julien Pézard
,
Mihai Lazar
,
Bertrand Vilquin
,
Pedro Rojo Romeo
,
Naoufel Haddour
et al.
JNTE (Journées Nationales des Technologies Emergentes), Nov 2015, Ecully, France
Communication dans un congrès
hal-01946338
v1
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Vertical termination filled with adequate dielectric for SiC devices in HVDC applications
T. Nguyen-Bui
,
Mihai Lazar
,
Jean-Louis Augé
,
Hervé Morel
,
L. Phung
et al.
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02138529
v1
|
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase
Tony Abi-Tannous
,
Maher Soueidan
,
G. Ferro
,
Mihai Lazar
,
Christophe Raynaud
et al.
ICSCRM, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02138520
v1
|
|
Realization of a single layer graphene field effect transistor
J. Pezard
,
Jérémy Lhuillier
,
Z. El-Friakh
,
V. Souliere
,
Pedro Rojo Romeo
et al.
EMRS Spring Meeting, 2015, Lille, France
Communication dans un congrès
hal-01489358
v1
|
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4H-SiC VJFETs with Self-Aligned Contacts
Konstantinos Zekentes
,
Antonis Stavrinidis
,
George Konstantinidis
,
Maria Kayambaki
,
Konstantinos Vamvoukakis
et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Communication dans un congrès
hal-02133681
v1
|
|
4H-SiC P-N junctions realized by VLS for JFET lateral structures
Selsabil Sejil
,
Farah Laariedh
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès
hal-02133686
v1
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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
Nicolas Thierry-Jebali
,
Arthur Vo-Ha
,
Davy Carole
,
Mihai Lazar
,
Gabriel Ferro
et al.
Communication dans un congrès
hal-01391861
v1
|
|
Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX
Tony Abi Tannous
,
Maher Soueidan
,
Gabriel Ferro
,
Berangere Toury-Pierre
,
Mihai Lazar
et al.
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065327
v1
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3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
Arthur Vo-Ha
,
Mickael Rebaud
,
Davy Carole
,
Mihai Lazar
,
Alexandre Tallaire
et al.
Communication dans un congrès
hal-02875458
v1
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On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing
Tony Abi Tannous
,
Maher Soueidan
,
Gabriel Ferro
,
Mihai Lazar
,
Bérangère Toury
et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
Communication dans un congrès
hal-02428741
v1
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC
Hassan Hamad
,
Pascal Bevilacqua
,
Dominique Planson
,
Christophe Raynaud
,
Dominique Tournier
et al.
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065307
v1
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Graphene on 4H-SiC for terahertz transistors and ferroelectric non-volatile memories
J. Pezard
,
Jérémy Lhuillier
,
Z. El-Friakh
,
V. Souliere
,
Pédro Rojo Romeo
et al.
CSCRM, 2014, Grenoble, France
Communication dans un congrès
hal-01489926
v1
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects
Dominique Planson
,
Pierre Brosselard
,
Karine Isoird
,
Mihai Lazar
,
Luong Viêt Phung
et al.
Communication dans un congrès
hal-01388002
v1
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p-type SiC growth on diamond substrate by VLS Transport
Arthur Vo-Ha
,
Davy Carole
,
Mihai Lazar
,
D. Tournier
,
François Cauwet
et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
hal-04423301
v1
|
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport
Davy Carole
,
Arthur Vo-Ha
,
Anthony Thomas
,
Mihai Lazar
,
Nicolas Thierry Thierry-Jebali
et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
hal-04362529
v1
|
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport
N Thierry-Jebali
,
Mihai Lazar
,
A Vo-Ha
,
D Carole
,
V Soulière
et al.
International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan
Communication dans un congrès
hal-04011693
v1
|
|
Buried selective growth of p-doped SiC by VLS epitaxy
Davy Carole
,
Stéphane Berckmans
,
Arthur Vo-Ha
,
Mihai Lazar
,
Dominique Tournier
et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747294
v1
|
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4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes
Stéphane Biondo
,
Laurent Ottaviani
,
Mihai Lazar
,
Dominique Planson
,
Julian Duchaine
et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747301
v1
|
|
Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour
Stéphane Biondo
,
Mihai Lazar
,
Laurent Ottaviani
,
Wilfried Vervisch
,
Olivier Palais
et al.
Communication dans un congrès
hal-00661511
v1
|
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Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport
Nicolas Thierry-Jebali
,
Mihai Lazar
,
Arthur Vo-Ha
,
Davy Carole
,
Véronique Soulière
et al.
Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
hal-04366810
v1
|
|
Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC
Farah Laariedh
,
Mihai Lazar
,
Pierre Cremilleu
,
Jean-Louis Leclercq
,
Dominique Planson
Communication dans un congrès
hal-00661507
v1
|
|
Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate
Jean Lorenzzi
,
Romain Esteve
,
Mihai Lazar
,
Dominique Tournier
,
Davy Carole
et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747299
v1
|
|
SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements
Mihai Lazar
,
François Jomard
,
Duy Minh Nguyen
,
Christophe Raynaud
,
Gontran Pâques
et al.
ICSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747300
v1
|
|
600 V PiN diodes fabricated using on-axis 4H silicon carbide
Gabriel Civrac
,
Farah Laariedh
,
Nicolas Thierry-Jebali
,
Mihai Lazar
,
Dominique Planson
et al.
Communication dans un congrès
hal-00747295
v1
|
|
Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate
Jean Lorenzzi
,
Nicoletta Jegenyes
,
Mihai Lazar
,
Dominique Tournier
,
Davy Carole
et al.
Communication dans un congrès
hal-00747669
v1
|
|
Investigation of 3C-SiC lateral growth on 4H-SiC MESAs
Jean Lorenzzi
,
Nikoletta Jegenyes
,
Mihai Lazar
,
Dominique Tournier
,
Francois Cauwet
et al.
Communication dans un congrès
hal-00786369
v1
|
|
Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates
Elias Haddad
,
Christian Martin
,
Charles Joubert
,
Bruno Allard
,
Maher Soueidan
et al.
CIMA, Mar 2011, Beyrouth, Lebanon. pp.Tu-P9
Communication dans un congrès
hal-00787193
v1
|
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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications
Dominique Tournier
,
Pierre Brosselard
,
Christophe Raynaud
,
Mihai Lazar
,
Hervé Morel
et al.
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès
hal-00661500
v1
|
|
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients
Duy Minh Nguyen
,
Christophe Raynaud
,
Mihai Lazar
,
Gontran Pâques
,
Sigo Scharnholz
et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747298
v1
|
|
Réalisation de contact ohmique sur SiC-4H type P
Farah Laariedh
,
Mihai Lazar
,
Pierre Cremillieu
,
Jean -Louis Leclercq
,
Dominique Planson
JNRDM2011, May 2011, Paris, France
Communication dans un congrès
hal-04560246
v1
|
|
High-temperature behavior of SiC power diodes
Cyril Buttay
,
Christophe Raynaud
,
Hervé Morel
,
Mihai Lazar
,
Gabriel Civrac
et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629225
v1
|
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State
Mihai Lazar
,
Fabrice Enoch
,
Farah Laariedh
,
Dominique Planson
,
Pierre Brosselard
Communication dans un congrès
hal-00661443
v1
|
|
Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization
Cyril Buttay
,
Amandine Masson
,
Jianfeng Li
,
Mark C. Johnson
,
Mihai Lazar
et al.
HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Communication dans un congrès
hal-00672619
v1
|
|
Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics
Laurent Ottaviani
,
Stéphane Biondo
,
Mihai Lazar
,
Wilfried Vervisch
,
Julian Duchaine
et al.
WOCSDICE, May 2011, Catania, Italy. pp.181
Communication dans un congrès
hal-00661522
v1
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
Sombel Diaham
,
Marie-Laure Locatelli
,
Thierry Lebey
,
Christophe Raynaud
,
Mihai Lazar
et al.
Communication dans un congrès
hal-00391472
v1
|
|
State of the art of High Temperature Power Electronics
Cyril Buttay
,
Dominique Planson
,
Bruno Allard
,
Dominique Bergogne
,
Pascal Bevilacqua
et al.
Microtherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès
hal-00413349
v1
|
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Process Optimization for High Temperature SiC Lateral Devices
Maher Soueidan
,
Mihai Lazar
,
Duy Minh Nguyen
,
Dominique Tournier
,
Christophe Raynaud
et al.
Communication dans un congrès
hal-00391358
v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics
Dominique Planson
,
Dominique Tournier
,
Pascal Bevilacqua
,
Nicolas Dheilly
,
Hervé Morel
et al.
Communication dans un congrès
hal-00373016
v1
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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode
Heu Vang
,
Sigo Scharnholz
,
Christophe Raynaud
,
Mihai Lazar
,
Gontran Pâques
et al.
Communication dans un congrès
hal-00391553
v1
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Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters
Dominique Bergogne
,
Hervé Morel
,
Dominique Tournier
,
Bruno Allard
,
Dominique Planson
et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès
hal-00372982
v1
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P
M Soueidan
,
Mihai Lazar
,
D. Tournier
,
Dominique Planson
,
Christophe Raynaud
et al.
4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France
Communication dans un congrès
hal-04606381
v1
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC
D M Nguyen
,
Christophe Raynaud
,
Mihai Lazar
,
H Vang
,
Dominique Planson
ICSCRM'2007, Oct 2007, Otsu, Japan
Communication dans un congrès
hal-02961607
v1
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Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
Erwan Oliviero
,
Mihai Lazar
,
Heu Vang
,
Christiane Dubois
,
Pierre Cremilleu
et al.
Communication dans un congrès
hal-00368931
v1
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1.2 kV pin diodes with SiCrystal epiwafer
Heu Vang
,
Christophe Raynaud
,
Pierre Brosselard
,
Mihai Lazar
,
Pierre Cremilleu
et al.
Communication dans un congrès
hal-00358819
v1
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High energy N+ ion implantation in 4H–SiC
Erwan Oliviero
,
Mihai Lazar
,
A. Gardon
,
C. Peaucelle
,
A. Perrat
et al.
Communication dans un congrès
istex
in2p3-00170330
v1
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Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés
Johnny Gié
,
Mihai Lazar
,
Pierre Brosselard
,
Dominique Planson
,
Christophe Raynaud
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès
hal-04619604
v1
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Ni-Al Ohmic contact to p-type 4H-SiC
Heu Vang
,
Mihai Lazar
,
Pierre Brosselard
,
Christophe Raynaud
,
Pierre Cremilleu
et al.
Communication dans un congrès
hal-03316263
v1
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Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts
Gabriel Ferro
,
Maher Soueidan
,
Christophe Jacquier
,
Philippe Godignon
,
Th Stauden
et al.
Communication dans un congrès
hal-00391581
v1
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Towards an integrated inverter based on lateral JFET SiC
J. Gié
,
Mihai Lazar
,
Dominique Planson
,
Dominique Bergogne
,
Pascal Bevilacqua
et al.
4th CIPS, Jun 2006, Naples, Italy. pp.171-176
Communication dans un congrès
hal-00413390
v1
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal
Heu Vang
,
Christophe Raynaud
,
Pierre Brosselard
,
Mihai Lazar
,
Pierre Cremillieu
et al.
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès
hal-04618792
v1
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Deep SiC etching with RIE
Mihai Lazar
,
Heu Vang
,
Pierre Brosselard
,
Christophe Raynaud
,
Pierre Cremilleu
et al.
E-MRS 2006, May 2006, Nice, France. pp.3886392
Communication dans un congrès
hal-03305997
v1
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Gravure RIE profonde du SiC pour la réalisation de composants de puissance
Heu Vang
,
T. Morel
,
F. Chaboud
,
Pierre Brosselard
,
Pierre Cremillieu
et al.
3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France
Communication dans un congrès
hal-04620248
v1
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P-type SiC layers formed by VLS induced selective epitaxial growth
Mihai Lazar
,
C Jacquier
,
Ch Dubois
,
Christophe Raynaud
,
G Ferro
et al.
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
hal-02953086
v1
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HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES
Dominique Planson
,
Marie-Laure Locatelli
,
Mihai Lazar
,
Christophe Raynaud
,
Jean-Pierre Chante
et al.
10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France
Communication dans un congrès
hal-04621819
v1
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SiC-based current limiter devices
Jean-Pierre Chante
,
Dominique Tournier
,
Dominique Planson
,
Christophe Raynaud
,
Mihai Lazar
et al.
Communication dans un congrès
hal-04032970
v1
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Conception d'un transistor JFET 5 kV en SiC-4H
Pierre Brosselard
,
Dominique Planson
,
Léa Di Cioccio
,
Thierry Billon
,
Sigo Scharnholz
et al.
10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France
Communication dans un congrès
hal-04621465
v1
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A 3.5 kV thyristor in 4H-SiC with a JTE periphery
Pierre Brosselard
,
Thierry Bouchet
,
Dominique Planson
,
Sigo Scharnholz
,
Gontran Pâques
et al.
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
hal-02953080
v1
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Electrothermal simulations of silicon carbide current limiting devices
Dominique Planson
,
J.P. Chante
,
M. Lazar
,
P. Brosselard
,
Christophe Raynaud
et al.
Communication dans un congrès
hal-02498210
v1
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The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.
M Lazar
,
G Cardinali
,
C Raynaud
,
A Poggi
,
Dominique Planson
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02941715
v1
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor
Pierre Brosselard
,
Volker Zorngiebel
,
Dominique Planson
,
Sigo Scharnholz
,
J.-P Chante
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02503456
v1
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension
Christophe Raynaud
,
M. Lazar
,
Dominique Planson
,
J.-P Chante
,
Z. Sassi
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02498145
v1
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Silicon Carbide specific components for power electronics system protection
J.-P Chante
,
Dominique Planson
,
Christophe Raynaud
,
Marie-Laure Locatelli
,
M. Lazar
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02503449
v1
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Design and simulation of a planar anode GTO thyristor on SiC
Pierre Brosselard
,
Dominique Planson
,
Sigo Scharnholz
,
V. Zorngiebel
,
Mihai Lazar
et al.
Communication dans un congrès
hal-00410085
v1
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC
Roberta Nipoti
,
Francesco Moscatelli
,
Andrea Scorzoni
,
Antonella Poggi
,
Gian Carlo Cardinali
et al.
Communication dans un congrès
hal-02485106
v1
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension
S.R. Wang
,
Christophe Raynaud
,
Dominique Planson
,
Mihai Lazar
,
Jean-Pierre Chante
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
hal-02464381
v1
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Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Dominique Tournier
,
Xavier Jorda
,
Josep Montserrat
,
Dominique Planson
,
Christophe Raynaud
et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
hal-02458130
v1
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Experimental characterization of a 4H-SiC high voltage current limiting device
Franck Nallet
,
Dominique Planson
,
Philippe Godignon
,
Marie-Laure Locatelli
,
Mihai Lazar
et al.
European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France
Communication dans un congrès
hal-03714731
v1
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Study of 6H-SiC high voltage bipolar diodes under reverse biases
Karine Isoird
,
Mihai Lazar
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
et al.
European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France
Communication dans un congrès
hal-03712596
v1
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4H-SiC bipolar power diodes realized by ion implantation
M. Lazar
,
Dominique Planson
,
K. Isoird
,
Marie-Laure Locatelli
,
Christophe Raynaud
et al.
Communication dans un congrès
hal-02145397
v1
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects
M. Lazar
,
Christophe Raynaud
,
Dominique Planson
,
Marie-Laure Locatelli
,
K. Isoird
et al.
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02476227
v1
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization
K Isoird
,
M Lazar
,
Marie-Laure Locatelli
,
Christophe Raynaud
,
Dominique Planson
et al.
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02975956
v1
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Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
Mihai Lazar
,
Karine Isoird
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
et al.
43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
Communication dans un congrès
hal-02275712
v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Mihai Lazar
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
,
Dominique Planson
et al.
European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72
Communication dans un congrès
hal-02151711
v1
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