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Mohamed Boutchich
Dr Boutchich Mohamed
Associate Professor in Electrical Engineering
Sorbonne University
30
Documents
Affiliations actuelles
- 411302
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Etude du Dopage de Graphène Epitaxial sur SiC(0001) par Spectroscopies de PhotoélectronsELSPEC'16, 7eme conférence francophone sur les spectroscopies d’électrons, May 2016, Meudon, France
Communication dans un congrès
hal-01449031v1
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Probing the electronic properties of CVD graphene superlatticesNanotechnology Materials and Devices Conference (NMDC), 2016 IEEE, Sep 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777071⟩
Communication dans un congrès
hal-01533988v1
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Spatially resolved photoluminescence on multi stack InAs quantum dotsInternational Workshop on Nanostructures Characterization and Nanomaterials – Bangkok 2015, Mohamed Boutchich - ICT ASIA 2D NANOTEC, Aug 2015, Bangkok, Thailand
Communication dans un congrès
hal-01257898v1
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Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001)ANM2015,6th International Conference on Advanced Nanomaterials, Jul 2015, Aveiro, Portugal
Communication dans un congrès
hal-01257881v1
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Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès
hal-01232115v1
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Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès
hal-01239190v1
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Coupling on a confocal imaging system µ-Raman, µ-PL, AFM and electrical extensions at a sub micrometric scaleInternational Workshop on Nanostructure Characterization and Nanomaterials, Thai Organic and Printed Electronics Innovation Center (TOPIC) / NECTEC, Aug 2015, Bangkok, Thailand
Communication dans un congrès
hal-01259190v1
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TEMPERATURE DEPENDENT PHOTOLUMINESCENCE IN SILICON BASED HETEROJUNCTION SOLAR CELLEU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. pp.1214-1217
Communication dans un congrès
hal-01099586v1
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Doping and characterization of trilayer graphene on 4H-SiC (0001)International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan
Communication dans un congrès
hal-01104494v1
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Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7PM-4
Communication dans un congrès
hal-01104492v1
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Photoluminescence techniques for heterojunction solar cell characterizationJNPV 2013, Dec 2013, Dourdan, France
Communication dans un congrès
hal-00931327v1
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Photoluminescence techniques for heterojunction solar cell characterizationJournées Junior FédESol 2013, Dec 2013, Dourdan, France
Communication dans un congrès
hal-00931326v1
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Ultraviolet photodetectors based on hydrogenated/oxidized diamond surfaces characterization of silicon heterojunctions for solar cellsIUMRS-ICEM 2012, Mar 2012, Yokohama, Japan
Communication dans un congrès
hal-00779008v1
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Graphene oxide reduced through chemical and biological processesIrago Conference 2012, Nov 2012, Aichi, Japan
Communication dans un congrès
hal-00779022v1
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Amorphous and microcrystalline silicon diamond based heterojunctionsICANS24, Aug 2011, Nara, Japan
Communication dans un congrès
hal-00710772v1
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