Moïra Hocevar Chargée de Recherche,Institut Néel, CNRS

Identifiants chercheurs

IdHAL :

moira-hocevar

ORCID :

0000-0001-5949-5480

IdRef :

133057968

Présentation

Previous Positions

since 2015 CNRS Research scientist @ Institut Néel Grenoble

2013-2015 Researcher @ Institut Néel Grenoble

2012-2013 Postdoc @ CEA Grenoble

2008-2012 Postdoc @ TU Delft

Education

2022 Habilitation in Physics - Université Grenoble Alpes

2005-2008 PhD in Electronics - INSA de Lyon

2004-2005 Masters in Environmental Science - Université Paris VII Denis Diderot

1999-2004 Masters in Materials Science engineering - INSA de Lyon

PhD supervision

2022–2025 Danylo Mosiiet, IRGA-BICOQ: Epitaxial growth of InAs/ZnTe core-shell nanowires for topological quantum computing (co-directer: E. Bellet-Amalric, IRIG CEA Grenoble)

2022–2025 Raphaël Rousset-Zenou, Chaire d'Excellence LANEF HYMAT: Hybrid InAs nanowires for superconducting quantum devices (co-supervisor: J. Nygard, Niels Bohr Institute, Copenhagen)

2019–2022 An-Hsi Chen, ANR HYBRID: Epitaxial growth of hybrid nanowires for topological quantum computing (direction)

2015–2018 Daria Beznasyuk, LANEF PhD Fellowship: High lattice mismatch GaAs-InAs nanowires for quantum photonics (co-supervision: J. Claudon, IRIG CEA Grenoble)

Master students supervision

Zeinab Issa, M2 Nanophysics UGA, Jospehson junctions in hybrid InAs nanowires 2023

Yassine Oubaid, M2 Nanoscience Ecole Centrale de Lyon, Growth of InAs/ZnTe core-shell nanowires 2022

David Zapata, M1 University of Pittsburgh, USA, In-situ TEM growth of InAs/GaAs axial nanowires 2022

An-Hsi Chen, M2 Nanophysics UGA, Growth and structural characterizations of hybrid nanowires 2019

Sergi Cuesta, M2 Nanophysics UGA (co-supervision with E. Monroy, IRIG CEA Grenoble), Semiconducting nanowire photodetectors 2019 (now PhD student at CEA-IRIG)

Anna Park, M1 Carnegie Mellon University, Pittsburgh, USA TEM and XRD studies of Sn/InAs thin films and nanowires 2019

Cristina Mier Gonzales, M2 Nanophysics UGA, Growth of Nb/InAs core-shell nanowires 2018 (now PhD student at CFM, San Sebastian, Spain)

Saranath Seshradi, M2 Erasmus Mundus, GaAs/InGaAs heterostructure nanowires 2018 (now PhD student at LiPhy, Saint Martin d’Hères)

Brian McMinn, M1 University of Pittsburgh, USA, Fabrication of Nb/InAs nanowire devices 2018

Research projects

&quot;BIOPHOTON&quot; Biomolecular detection using Nanophotodetectors Arrays CEA Programmes Transversaux de Compétences - Instrumentation et Détection 2020-2022

&quot;HYBRID&quot; Hybrid materials for quantum science and engineering ANR PIRE - PI 2018-2022

Hybrid materials to study topological states of matter Thomas Jefferson Fund - PI 2018-2020

&quot;QDOT&quot; Quantum Dot based Optomechanical Transducers ANR PRC 2017-2021

&quot;Super-semi&quot; Nanowires for quantum bits based on spin and Majorana fermions COOPERA Rhône-Alpes région - PI 2016-2018

&quot;PHOTOSI35&quot; Nanowires for photonics applications using Si/III-V heterostructures AGIR PEM UGA - PI 2015-2017

Hybrid superconductor/semiconductor nanowires Mini projet Institut Néel - PI 2015

&quot;TOPONANO&quot; Helical states and Majorana fermions in topological nanostructures ANR OH Risque 2015-2019

Publications

Article dans une revue (36)

Transmon qubit using Sn as a junction superconductor Amrita Purkayastha,Amritesh Sharma,Param J. Patel,An-Hsi Chen,Connor P. Dempseyet al. Nano Letters, 2026, 26 (6), pp.2074-2079. ⟨10.1021/acs.nanolett.5c05276⟩ Article dans une revue hal-05346295v1
Sn-InAs nanowire shadow-defined Josephson junctions Amritesh Sharma,An-Hsi Chen,Connor P. Dempsey,Amrita Purkayastha,Mihir Pendharkaret al. Nano Letters, 2025, 25 (34), pp.12869-12875. ⟨10.1021/acs.nanolett.5c02410⟩ Article dans une revue hal-04997963v1
Hyperspectral electromechanical imaging at the nanoscale: Dynamical backaction, dissipation, and quantum fluctuations Clément Chardin,Sébastien Pairis,Sabine Douillet,Moïra Hocevar,Julien Claudonet al. Nano Letters, 2025, 25 (12), pp.4774-4780. ⟨10.1021/acs.nanolett.4c06196⟩ Article dans une revue hal-04997966v1
First Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface Malcolm J A Jardine,Derek Dardzinski,Zefeng Cai,Vladimir N Strocov,Moïra Hocevaret al. ACS Applied Materials & Interfaces, 2025, 17 (3), pp.5462-5474. ⟨10.1021/acsami.4c17957⟩ Article dans une revue hal-05346367v1
Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect P. Zhang,S. Mudi,M. Pendharkar,J. S. Lee,C. P. Dempseyet al. SciPost Physics, 2025, 18, pp.203. ⟨10.21468/SciPostPhys.18.6.203⟩ Article dans une revue hal-03857784v1
Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires Danylo Mosiiets,Yann Genuist,Joel Cibert,Edith Bellet-Amalric,Moïra Hocevar Crystal Growth & Design, 2024, 24 (9), pp.3888-3898. ⟨10.1021/acs.cgd.4c00186⟩ Article dans une revue hal-04425438v1
Large Second-Order Josephson Effect in Planar Superconductor-Semiconductor Junctions P. Zhang,A. Zarassi,L. Jarjat,V. van de Sande,M. Pendharkaret al. SciPost Physics, 2024, 16 (1), pp.030. ⟨10.21468/SciPostPhys.16.1.030⟩ Article dans une revue hal-03857774v1
First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbf{\alpha}$-Sn/InSb Interface Malcolm Jardine,Derek Dardzinski,Maituo Yu,Amrita Purkayastha,An-Hsi Chenet al. ACS Applied Materials & Interfaces, 2023, 15 (12), pp.16288-16298. ⟨10.1021/acsami.3c00323⟩ Article dans une revue hal-03949297v1
Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates An-Hsi Chen,Connor Dempsey,Mihir Pendharkar,Amritesh Sharma,Bomin Zhanget al. Nanotechnology, 2023, 35 (7), pp.075702. ⟨10.1088/1361-6528/ad079e⟩ Article dans une revue hal-03988148v1
Parity-preserving and magnetic field–resilient superconductivity in InSb nanowires with Sn shells M. Pendharkar,B. Zhang,H. Wu,A. Zarassi,P. Zhanget al. Science, 2021, 372 (6541), pp.508-511. ⟨10.1126/science.aba5211⟩ Article dans une revue hal-02429830v1
Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure D. V. Beznasyuk,P. Stepanov,Jean-Luc Rouvière,F. Glas,M. Verheijenet al. Physical Review Materials, 2020, 4 (7), pp.074607. ⟨10.1103/PhysRevMaterials.4.074607⟩ Article dans une revue hal-02429832v1
Erasing odd-parity states in semiconductor quantum dots coupled to superconductors Z. Su,R. Žitko,P. Zhang,H. Wu,D. Caret al. Physical Review B, 2020, 101 (23), pp.235315. ⟨10.1103/PhysRevB.101.235315⟩ Article dans une revue hal-02881117v1
Shot-Noise-Limited Nanomechanical Detection and Radiation Pressure Backaction from an Electron Beam S. Pairis,F. Donatini,M. Hocevar,D. Tumanov,N. Vaishet al. Physical Review Letters, 2019, 122 (8), pp.083603. ⟨10.1103/PhysRevLett.122.083603⟩ Article dans une revue hal-02054430v1
Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices J Chen,B D Woods,P Yu,M. Hocevar,D. Caret al. Physical Review Letters, 2019, 123 (10), pp.107703. ⟨10.1103/PhysRevLett.123.107703⟩ Article dans une revue hal-02332243v1
Effect of Bias on the Response of GaN Axial p–n Junction Single-Nanowire Photodetectors Sergi Cuesta,M. Spies,V. Boureau,F. Donatini,Moïra Hocevaret al. Nano Letters, 2019, 19 (8), pp.5506-5514. ⟨10.1021/acs.nanolett.9b02040⟩ Article dans une revue hal-02326742v1
Mirage Andreev Spectra Generated by Mesoscopic Leads in Nanowire Quantum Dots Z Su,A. Zarassi,J.-F Hsu,P San-Jose,E Pradaet al. Physical Review Letters, 2018, 121 (12), pp.127705. ⟨10.1103/PhysRevLett.121.127705⟩ Article dans une revue hal-02332284v1
Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices Jun Chen,Peng Yu,John Stenger,Moïra Hocevar,Diana Caret al. Science Advances , 2017, 3 (9), pp.1701476. ⟨10.1126/sciadv.1701476⟩ Article dans une revue hal-01712993v1
Andreev molecules in semiconductor nanowire double quantum dots Zhaoen Su,Alexandre Tacla,Moïra Hocevar,Diana Car,S.R. Plissardet al. Nature Communications, 2017, 8 (1), pp.585. ⟨10.1038/s41467-017-00665-7⟩ Article dans une revue hal-01712990v1
Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots A. Zarassi,Z. Su,J. Danon,J. Schwenderling,Moïra Hocevaret al. Physical Review B, 2017, 95 (15), pp.155416. ⟨10.1103/PhysRevB.95.155416⟩ Article dans une revue hal-01555601v1
Dislocation-free axial InAs-on-GaAs nanowires on silicon D. V. Beznasyuk,Eric Robin,Martien den Hertog,Julien Claudon,Moïra Hocevar Nanotechnology, 2017, 28 (36), pp.365602. ⟨10.1088/1361-6528/aa7d40⟩ Article dans une revue hal-01555564v1
Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap R. Jayaprakash,F. G. Kalaitzakis,G. Christmann,K. Tsagaraki,Moïra Hocevaret al. Scientific Reports, 2017, 7, pp.5542. ⟨10.1038/s41598-017-06125-y⟩ Article dans une revue hal-01576515v1
Nanoscale guiding and shaping of indium droplets Maciej Dąbrowski,Yanan Dai,Moïra Hocevar,Sergey Frolov,Hrvoje Petek Applied Physics Letters, 2016, 109 (26), pp.261602. ⟨10.1063/1.4973364⟩ Article dans une revue hal-01428759v1
Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires Moïra Hocevar,Le Thuy Thanh Giang,Rudeesun Songmuang,Martien den Hertog,Lucien Besombeset al. Applied Physics Letters, 2013, 102 (19), pp.191103. ⟨10.1063/1.4803685⟩ Article dans une revue hal-00935527v1
From InSb Nanowires to Nanocubes: Looking for the Sweet Spot Sébastien Plissard,Dorris Slapak,Marcel A. Verheijen,Moïra Hocevar,George Imminket al. Nano Letters, 2012, 12 (4), pp.1794-1798. ⟨10.1021/nl203846g⟩ Article dans une revue hal-02434316v1
Growth and optical properties of axial hybrid III–V/silicon nanowires Moïra Hocevar,George Immink,Marcel A. Verheijen,Nika Akopian,Val Zwilleret al. Nature Communications, 2012, 3 (1), ⟨10.1038/ncomms2277⟩ Article dans une revue hal-02070690v1
Avalanche amplification of a single exciton in a semiconductor nanowire Gabriele Bulgarini,Michael Reimer,Moïra Hocevar,Erik P.A.M. Bakkers,Leo Kouwenhovenet al. Nature Photonics, 2012, 6 (7), pp.455-458. ⟨10.1038/nphoton.2012.110⟩ Article dans une revue hal-02070682v1
Bright single-photon sources in bottom-up tailored nanowires Michael Reimer,Gabriele Bulgarini,Nika Akopian,Moïra Hocevar,Maaike Bouwes Bavincket al. Nature Communications, 2012, 3 (1), ⟨10.1038/ncomms1746⟩ Article dans une revue hal-02071152v1
Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon K. Naji,H. Dumont,G. Saint-Girons,J. Penuelas,G. Patriarcheet al. Journal of Crystal Growth, 2012, 343 (1), pp.101-104. ⟨10.1016/j.jcrysgro.2011.12.062⟩ Article dans une revue istex hal-02071144v1
Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide Moïra Hocevar,Gilles Patriarche,Abdelkader Souifi,Michel Gendry Journal of Crystal Growth, 2011, 321 (1), pp.1-7. ⟨10.1016/j.jcrysgro.2011.01.067⟩ Article dans une revue istex hal-02070640v1
Crystal Structure Transfer in Core/Shell Nanowires Rienk Algra,Moïra Hocevar,Marcel A. Verheijen,Ilaria Zardo,George Imminket al. Nano Letters, 2011, 11 (4), pp.1690-1694. ⟨10.1021/nl200208q⟩ Article dans une revue hal-02071131v1
Controlling the Directional Emission of Light by Periodic Arrays of Heterostructured Semiconductor Nanowires Silke Diedenhofen,Olaf Janssen,Moïra Hocevar,Aurélie Pierret,Erik P.A.M. Bakkerset al. ACS Nano, 2011, 5 (7), pp.5830-5837. ⟨10.1021/nn201557h⟩ Article dans une revue hal-02071137v1
Generic nano-imprint process for fabrication of nanowire arrays Aurélie Pierret,Moïra Hocevar,Silke Diedenhofen,Rienk Algra,E Vlieget al. Nanotechnology, 2010, 21 (6), pp.065305. ⟨10.1088/0957-4484/21/6/065305⟩ Article dans une revue hal-02070636v1
Large Improvement of Data Retention in Nanocrystal-Based Memories on Silicon Using InAs Quantum Dots Embedded in SiO2 Moïra Hocevar,Nicolas Baboux,Alain Poncet,Michel Gendry,Abdelkader Souifi IEEE Transactions on Electron Devices, 2009, 56 (11), pp.2657-2663. ⟨10.1109/TED.2009.2030659⟩ Article dans une revue hal-02070630v1
Electron retention in InAs-nanocrystals embedded in SiO2/Si for non-volatile memories Moïra Hocevar,P. Regreny,A. Poncet,M. Gendry,A. Souifi Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (12), pp.3601-3604. ⟨10.1002/pssc.200780170⟩ Article dans une revue istex hal-02070626v1
InAs nanocrystals on SiO2∕Si by molecular beam epitaxy for memory applications Moïra Hocevar,Philippe Regreny,Armel Descamps,David Albertini,Guillaume Saint-Gironset al. Applied Physics Letters, 2007, 91 (13), pp.133114 Article dans une revue hal-01939910v1
Application of headspace SPME-GC-MS in characterisation of odorous volatile organic compounds emitted from magnetic tape coatings based on poly(urethane-ester) after natural and artificial ageing Benoît Thiebaut,Agnès Lattuati-Derieux,Moïra Hocevar,Léon-Bavi Vilmont Polymer Testing, 2007, 26 (2), pp.243-256. ⟨10.1016/j.polymertesting.2006.10.006⟩ Article dans une revue istex hal-02070622v1

Pré-publication, Document de travail (3)

Gate-tunable Josephson parametric amplifiers based on semiconductor nanowires Raphael Rousset-Zenou,Nicolas Aparicio,Simon Messelot,Rasmus Schlosser,Martin Bjergfeltet al. 2025 Pré-publication, Document de travail hal-05342525v1
Smoking gun&quot; signatures of topological milestones in trivial materials by measurement fine-tuning and data postselection S.M Frolov,P Zhang,B Zhang,Y Jiang,S Byardet al. 2023 Pré-publication, Document de travail hal-04230102v1
Planar Josephson Junctions Templated by Nanowire Shadowing P. Zhang,A. Zarassi,M. Pendharkar,J. S. Lee,L. Jarjatet al. 2022 Pré-publication, Document de travail hal-03857772v1

Chapitre d'ouvrage (3)

Hybrid III–V/Silicon Nanowires Moïra Hocevar,Sonia Conesa-Boj,Erik P.A.M. Bakkers Semiconductors and Semimetals, 93, pp.231-248, 2015, Semiconductors and Semimetals, ⟨10.1016/bs.semsem.2015.07.006⟩ Chapitre d'ouvrage hal-01239742v1
Single semiconductor quantum dots in nanowires: growth, optics, and devices M. Reimer,N. Akopian,M. Barkelid,G. Bulgarini,R. Heereset al. Quantum Dots, Cambridge University Press, pp.21-40, 2012, ⟨10.1017/CBO9780511998331.003⟩ Chapitre d'ouvrage hal-02429838v1
III-Phospide Nanowires Erik P.A.M. Bakkers,Moïra Hocevar,Rienk E. Algra,Lou-Fé Feiner,Marcel A. Verheijen Advances in III-V Semiconductor Nanowires and Nanodevices, BENTHAM SCIENCE PUBLISHERS, pp.43-67, 2012, ⟨10.2174/978160805052911101010043⟩ Chapitre d'ouvrage hal-02429840v1

Thèse (1)

Croissance et caractérisation électrique de nanocristaux d'InAs/SiO2 pour des applications de mémoires non volatiles sur silicium. Moïra Hocevar Matière Condensée [cond-mat]. INSA de Lyon, 2008. Français. ⟨NNT : 2008ISAL0072⟩ Thèse tel-00551840v1