Nathalie BATUT

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nathalie-batut

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061777366

Présentation

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Publications

Article dans une revue (7)

Physics-based reverse recovery modelling of ultrafast recovery Si diodes with carrier lifetime control Imen Abdennabi,Nathalie Batut,Ambroise Schellmanns,Marie Pierre Chauvat,Fabrice Roquetaet al. International Journal of Powertrains, 2025, 14 (1), ⟨10.1504/IJPT.2025.10070871⟩ Article dans une revue hal-05128045v1
Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In 2 O 3 Layer in CZTS Top Cell Nicole Doumit,Kahatie Soro,Aylin Ozocak,Nathalie Batut,Ambroise Schellmannset al. Advanced Theory and Simulations, 2021, 4 (8), pp.2100099. ⟨10.1002/adts.202100099⟩ Article dans une revue hal-03581376v1
Development and Static Mode Characterization of a New Low-Loss AC Switch Based on Super-Gain BJT Zheng Ren,Sébastien Jacques,Yubing Song,Adelphe Caldeira,Guillaume Goubardet al. Journal of Energy and Power Engineering, 2014, 8 (2), pp.357-364. ⟨10.17265/1934-8975/2014.02.020⟩ Article dans une revue hal-01833053v1
An Innovative Solar Production Simulator to Better Teach the Foundations of Photovoltaic Energy to Students Sébastien Jacques,Zheng Ren,Sébastien Bissey,Ambroise Schellmanns,Nathalie Batutet al. WSEAS Transactions on advances in Engineering Education, 2014, 11, pp.11-20 Article dans une revue hal-01810893v1
New Multilevel Mixed Topology Development to Improve Inverter Robustness for Domestic Photovoltaic Installations Sébastien Jacques,Adelphe Caldeira,Ambroise Schellmanns,Zheng Ren,Nathalie Batut Journal of Power and Energy Engineering, 2013, 01 (05), pp.1-6. ⟨10.4236/jpee.2013.15001⟩ Article dans une revue hal-01810898v1
A Review on Selected Patents about Trends Regarding Silicon Monolithic Power AC Switches Luong Viet Phung,Nathalie Batut,Ambroise Schellmanns,Sébastien Jacques Recent Patents on Electrical & Electronic Engineering, 2012, 5 (3), pp.222 - 230. ⟨10.2174/2213111611205030222⟩ Article dans une revue hal-01636532v1
Lifetime Prediction Modeling of Non-Insulated TO-220AB Packages with Lead-Based Solder Joints during Power Cycling Sébastien Jacques,Adelphe Caldeira,Nathalie Batut,Ambroise Schellmanns,René Leroyet al. Microelectronics Reliability, 2012, 52 (1), pp.212-216. ⟨10.1016/j.microrel.2011.08.017⟩ Article dans une revue istex hal-01810917v1

Communication dans un congrès (6)

Comparaison des performances des transistors SiC et GaN 650V pour des applications bidirectionnelles Rida Yachouti,Ismail Aouichak,Jean-Charles Le Bunetel,Nathalie Batut,Ambroise Schellmanns Symposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France Communication dans un congrès hal-05495767v1
Modeling of carrier lifetime based on Deep-Level Transient Spectroscopy for power PIN diodes Imen Abdennabi,Nathalie Batut,Ambroise Schellmanns,Lionel Jaouen,Fabrice Roquetaet al. 2022 IEEE International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM), Oct 2022, Tunis, Tunisia. pp.1-6, ⟨10.1109/CISTEM55808.2022.10043947⟩ Communication dans un congrès hal-04010867v2
Simulated 1200V SiC-MOSFET short-circuit behavior Guillaume Goubard,Zheng Ren,Nathalie Batut,Ambroise Schellmanns icrepq2018, Mar 2018, Salamanca, Spain Communication dans un congrès hal-01862351v1
Gummel-Poon modeling of a New Super-Gain BJT and an innovative 600V AC switch Zheng Ren,Nathalie Batut,Ambroise Schellmanns Symposium de Genie Electrique, Jun 2016, Grenoble, France Communication dans un congrès hal-01361544v1
BJT static behavior improvement by modification of the epitaxial layer Loïc Théolier,Luong Viet Phung,Nathalie Batut,Ambroise Schellmanns,Yves Raingeaudet al. 27th International Conference on Microelectronics Proceedings (MIEL), 2010, May 2010, Nis, Serbia. pp.79-82 Communication dans un congrès hal-00991551v1
BJT application expansion by insertion of superjunction Loïc Théolier,Chawki Benboujema,Ambroise Schellmanns,Nathalie Batut,Yves Raingeaudet al. 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, Jun 2010, Hiroshima, Japan. pp.157 - 160 Communication dans un congrès hal-00991541v1

Brevet (1)

Perfectionnements apportés aux diodes Schottky N. Cézac,Frédéric Morancho,Henri Tranduc,Pierre Rossel France, N° de brevet: 00 401643.2-2203. Rapport LAAS n° 00219. 2000 Brevet hal-01862318v1