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Nikolay Cherkashin
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- nikolay-cherkashin
- 0000-0002-0322-0864
- IdRef : 183426924
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Strain mapping in layers and devices by electron holographyphysica status solidi (a), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩
Article dans une revue
hal-01736038v1
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End of range defects in GeJournal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
Article dans une revue
hal-01736054v1
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On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substratesApplied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩
Article dans une revue
hal-00417300v1
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Strain Mapping of Layers and Devices Using Electron HolographyECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩
Communication dans un congrès
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Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si SubstrateECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩
Communication dans un congrès
hal-01736065v1
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Determination of strain within Si1-yCy layers grown by CVD on a Si substrateSymposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
Communication dans un congrès
hal-01736057v1
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Dark-Field Electron Holography for Strain MappingAlain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
Chapitre d'ouvrage
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