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Nikolay Cherkashin
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- nikolay-cherkashin
- 0000-0002-0322-0864
- IdRef : 183426924
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On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substratesApplied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩
Article dans une revue
hal-00417300v1
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Determination of strain within Si1-yCy layers grown by CVD on a Si substrateSymposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
Communication dans un congrès
hal-01736057v1
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