Nikolay Cherkashin

Identifiants chercheurs

IdHAL :

nikolay-cherkashin

ORCID :

0000-0002-0322-0864

IdRef :

183426924

Présentation

Publications

Article dans une revue (151)

High Temperature Operation and Spectral Stability of InGaN/GaN Ring Microlasers on Silicon Natalia Kryzhanovskaya,Sergey Komarov,Eduard Moiseev,Konstantin Ivanov,Dmitry Masyutinet al. IEEE Photonics Technology Letters, 2026, 38 (4), pp.243-246. ⟨10.1109/LPT.2025.3628068⟩ Article dans une revue hal-05367652v1
Origin of strain in H+ ion implanted LiTaO3 single crystals A. Louiset,S. Schamm-Chardon,O. Kononchuk,C. Magén,Nikolay Cherkashin APL Materials, 2025, 13 (11), pp.111109. ⟨10.1063/5.0291228⟩ Article dans une revue hal-05363153v1
Optically Induced Irreversible Ferroelastic and Ferroelectric Switching in Epitaxial BaTiO 3 Films on Silicon Ibukun Olaniyan,Alfredo Blázquez Martínez,Valentin Väinö Hevelke,Sven Wiesner,Rong Wuet al. ACS Nano, 2025, ⟨10.1021/acsnano.5c05309⟩ Article dans une revue hal-05327838v1
Ferroelectricity in Single‐Crystalline BaTiO&lt;sub&gt;3&lt;/sub&gt; Nanodisks on Silicon Ibukun Olaniyan,Jürgen Albert,Beatriz Canabarro,Haidong Lu,Sven Wiesneret al. Advanced Functional Materials, 2025, ⟨10.1002/adfm.202507905⟩ Article dans une revue hal-05202953v1
High temperature evolution of interfacial metal film bonding two 4H-SiC substrates Maëlle Le Cunff,François Rieutord,Didier Landru,Oleg Kononchuk,Nikolay Cherkashin Applied Surface Science, 2025, 682, pp.161678. ⟨10.1016/j.apsusc.2024.161678⟩ Article dans une revue hal-04776692v1
Shaping single crystalline BaTiO 3 nanostructures by focused neon or helium ion milling I I Olaniyan,S W Schmitt,J Albert,J Garcia Fernandez,Cécile Marcelotet al. Nanotechnology, 2024, 35 (33), pp.335301. ⟨10.1088/1361-6528/ad4713⟩ Article dans une revue hal-04616424v1
Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon Ibukun Olaniyan,Iurii Tikhonov,Valentin Väinö Hevelke,Sven Wiesner,Leifeng Zhanget al. Nature Communications, 2024, 15 (1), pp.10047. ⟨10.1038/s41467-024-54285-z⟩ Article dans une revue hal-04793436v1
High temperature evolution of a confined silicon layer Maëlle Le Cunff,François Rieutord,Didier Landru,Oleg Kononchuk,Nikolay Cherkashin Journal of Applied Physics, 2024, 135 (24), ⟨10.1063/5.0205878⟩ Article dans une revue hal-04628219v1
Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice Nikolay Cherkashin,A. Louiset,A. Chmielewski,D.J. Kim,C. Dubourdieuet al. Ultramicroscopy, 2023, 253, pp.113778. ⟨10.1016/j.ultramic.2023.113778⟩ Article dans une revue hal-04129547v1
Electromechanically Coupled III-N Quantum Dots Daniele Barettin,Alexei Sakharov,Andrey Tsatsulnikov,Andrey Nikolaev,Nikolay Cherkashin Nanomaterials, 2023, 13 (2), pp.241. ⟨10.3390/nano13020241⟩ Article dans une revue hal-03924964v1
Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs Daniele Barettin,Alexei V Sakharov,Andrey F Tsatsulnikov,Andrey E Nikolaev,Alessandro Pecchiaet al. Nanomaterials, 2023, 13 (8), pp.1367. ⟨10.3390/nano13081367⟩ Article dans une revue hal-04085810v1
Experimentally-Verified Modeling of InGaAs Quantum Dots Alexander Kosarev,Vladimir Chaldyshev,Nikolay Cherkashin Nanomaterials, 2022, 12 (12), pp.1967. ⟨10.3390/nano12121967⟩ Article dans une revue hal-03690840v1
Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5 Minh Anh Luong,Nikolay Cherkashin,Béatrice Pécassou,Chiara Sabbione,Frédéric Mazenet al. Nanomaterials, 2021, 11 (7), pp.1729. ⟨10.3390/nano11071729⟩ Article dans une revue hal-03375510v1
Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates Nikolay Cherkashin,A. Sakharov,A. Nikolaev,V. Lundin,S. Usovet al. Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2021, 47 (10), pp.753-756. ⟨10.1134/S106378502108006X⟩ Article dans une revue hal-03690810v1
Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3 Antonin Louiset,Sylvie Schamm-Chardon,Oleg Kononchuk,Nikolay Cherkashin Applied Physics Letters, 2021, 118 (8), pp.082903. ⟨10.1063/5.0040729⟩ Article dans une revue hal-03154232v1
Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial Nikolay Bert,Vladimir Chaldyshev,Nikolay Cherkashin,Vladimir Nevedomskiy,Valery Preobrazhenskiiet al. Journal of Applied Physics, 2019, 125 (14), pp.145106. ⟨10.1063/1.5048076⟩ Article dans une revue hal-02096562v1
Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C N. Ledentsov Jr.,M. Agustin,V.A. Shchukin,J.-R. Kropp,N. Ledentsovet al. Solid-State Electronics, 2019, 155, pp.150-158. ⟨10.1016/j.sse.2019.03.018⟩ Article dans une revue hal-02123597v1
Sb-rich nanoinclusions in an AlGaAsSb metamaterial Nikolay Bert,Vladimir Chaldyshev,Nikolay Cherkashin,Vladimir Nevedomskiy,Valery Preobrazhenskiiet al. MRS Advances, 2019, pp.1-8. ⟨10.1557/adv.2019.44⟩ Article dans une revue hal-02086243v1
Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes Enrico Di Russo,Nikolay Cherkashin,Maxim Korytov,A. Nikolaev,A. Sakharovet al. Journal of Applied Physics, 2019, 126 (12), pp.124307. ⟨10.1063/1.5113799⟩ Article dans une revue hal-02298940v1
Room temperature yellow InGaAlP quantum dot laser N.N. Ledentsov,V.A. Shchukin,Yu. Shernyakov,M.M. Kulagina,A.S. Payusovet al. Solid-State Electronics, 2019, 155, pp.129-138. ⟨10.1016/j.sse.2019.03.009⟩ Article dans une revue hal-02123602v1
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) A. Nadtochiy,Yu. Shernyakov,M. Kulagina,A. Payusov,N. Yu. Gordeevet al. Fizika i tekhnika poluprovodnicov / Semiconductors, 2019, 53 (12), pp.1699-1704. ⟨10.1134/S1063782619160218⟩ Article dans une revue hal-02905168v1
Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy F. Stumpf,A. A. Abu Quba,P. Singer,M. Rumler,Nikolay Cherkashinet al. Journal of Applied Physics, 2018, 123 (12), pp.125104. ⟨10.1063/1.5022558⟩ Article dans une revue hal-01745004v1
Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates N. N Ledentsov,V A Shchukin,Yu M Shernyakov,M. M Kulagina,A. S Payusovet al. Optics Express, 2018, 26 (11), pp.13985-13994. ⟨10.1364/OE.26.013985⟩ Article dans une revue hal-01793971v1
Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding Marie Coste,Timothée Molière,Nikolay Cherkashin,Géraldine Hallais,Laetitia Vincentet al. Thin Solid Films, 2018, 647, pp.13-18. ⟨10.1016/j.tsf.2017.12.015⟩ Article dans une revue hal-02322919v1
Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon Nikolay Cherkashin,Nabil Daghbouj,Grégory Seine,Alain Claverie Journal of Applied Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩ Article dans une revue hal-01736014v1
A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface V S Prudkovskiy,Fabrice Iacovella,K P Katin,M M Maslov,Nikolay Cherkashin Nanotechnology, 2018, 29 (36), pp.365304. ⟨10.1088/1361-6528/aacc5d⟩ Article dans une revue hal-01827571v1
A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon Nabil Daghbouj,Nikolay Cherkashin,Alain Claverie Microelectronic Engineering, 2018, 190, pp.54-56. ⟨10.1016/j.mee.2018.01.006⟩ Article dans une revue hal-01736187v1
Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes Daniele Barettin,Matthias auf Der Maur,Aldo Di Carlo,Alessandro Pecchia,Andrei F Tsatsulnikovet al. Nanotechnology, 2017, 28 (27), ⟨10.1088/1361-6528/aa75a8⟩ Article dans une revue hal-01736017v1
Electron microscopy by specimen design: application to strain measurements Nikolay Cherkashin,Thibaud Denneulin,Martin Hÿtch Scientific Reports, 2017, 7 (1), pp.12394 - 12394. ⟨10.1038/s41598-017-12695-8⟩ Article dans une revue hal-01707848v1
(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range N.N. Ledentsov,V.A. Shchukin,Y.M. Shernyakov,M.M. Kulagina,A.S. Payusovet al. Semiconductor Science and Technology, 2017, 32 (2), ⟨10.1088/1361-6641/aa5144⟩ Article dans une revue hal-01736018v1
Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes D. Barettin,M.A.D. Maur,A.D. Di Carlo,A. Pecchia,A.F. Tsatsulnikovet al. Nanotechnology, 2017, 28 (1), ⟨10.1088/0957-4484/28/1/015701⟩ Article dans une revue hal-01736015v1
Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency S.Y. Karpov,Nikolay Cherkashin,Wsevolod V. Lundin,Andrey E. Nikolaev,Alexei V. Sakharovet al. Physica Status Solidi A (applications and materials science), 2016, 213 (1), pp.19-29. ⟨10.1002/pssa.201532491⟩ Article dans une revue hal-01721146v1
Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon Nabil Daghbouj,Nikolay Cherkashin,François-Xavier Darras,Vincent Paillard,M. Fnaiechet al. Journal of Applied Physics, 2016, 119 (13), pp.135308 - 245301. ⟨10.1063/1.4945032⟩ Article dans une revue hal-01719485v1
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs Andrei F. Tsatsulnikov,Wsevolod V. Lundin,Alexei V. Sakharov,E.E. Zavarin,S.O. Usovet al. Semiconductors, 2016, 50 (9), pp.1241-1247. ⟨10.1134/S1063782616090232⟩ Article dans une revue hal-01721148v1
On the origin of dislocation loops in irradiated materials: A point of view from silicon Alain Claverie,Nikolay Cherkashin Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2016, 374, pp.82-89. ⟨10.1016/j.nimb.2015.09.011⟩ Article dans une revue istex hal-01719487v1
High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed Charles Renard,Timothée Molière,Nikolay Cherkashin,José Alvarez,Laetitia Vincentet al. Scientific Reports, 2016, 6, pp.25328. ⟨10.1038/srep25328⟩ Article dans une revue hal-01316731v1
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation V.G. Tikhomirov,V.E. Zemlyakov,V.V. Volkov,Y.M. Parnes,V.N. Vyuginovet al. Semiconductors, 2016, 50 (2), pp.244-248. ⟨10.1134/S1063782616020263⟩ Article dans une revue hal-01721147v1
Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing Nikolay Cherkashin,François-Xavier Darras,Alain Claverie Solid State Phenomena, 2016, 242, pp.190-195. ⟨10.4028/www.scientific.net/SSP.242.190⟩ Article dans une revue hal-01719486v1
Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach Andrei F. F Tsatsulnikov,Wsevolod V. V Lundin,Alexei V. V Sakharov,Andrey E. E Nikolaev,E.E. E Zavarinet al. Science of advanced materials, 2015, 7 (8), pp.1629-1635. ⟨10.1166/sam.2015.2277⟩ Article dans une revue hal-01721151v1
Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency Andrei F. Tsatsulnikov,Wsevolod V. Lundin,Alexei V. Sakharov,E.E. Zavarin,S.O. Usovet al. Semiconductors, 2015, 49 (11), pp.1516-1521. ⟨10.1134/S1063782615110238⟩ Article dans une revue hal-01721152v1
Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys Konstantinos Pantzas,Gilles Patriarche,David Troadec,Mathieu Kociak,Nikolay Cherkashinet al. Journal of Applied Physics, 2015, 117 (5), pp.55705. ⟨10.1063/1.4907210⟩ Article dans une revue hal-01721149v1
Modelling of point defect complex formation and its application to H+ ion implanted silicon Nikolay Cherkashin,François-Xavier Darras,P. Pochet,S. Reboh,Nicolas Ratel-Ramondet al. Acta Materialia, 2015, 99, pp.187-195. ⟨10.1016/j.actamat.2015.07.078⟩ Article dans une revue istex hal-01736020v1
Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy Nikolay Cherkashin,Nabil Daghbouj,François-Xavier Darras,M. Fnaiech,Alain Claverie Journal of Applied Physics, 2015, 118 (24), pp.245301 - 135308. ⟨10.1063/1.4938108⟩ Article dans une revue hal-01719496v1
Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon Yang Qiu,Fuccio Cristiano,Karim Huet,Fulvio Mazzamuto,Giuseppe Fisicaroet al. Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩ Article dans une revue hal-01659180v1
The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys Larbi Laânab,Amine Belafhaili,Fuccio Cristiano,Nikolay Cherkashin,Alain Claverie Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩ Article dans une revue istex hal-01719497v1
Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers Wsevolod V. Lundin,Andrey E. Nikolaev,A.V. Sakharov,S.O. Usov,E.E. Zavarinet al. Semiconductors, 2014, 48 (1), pp.53-57. ⟨10.1134/S1063782614010199⟩ Article dans une revue hal-01721154v1
Dynamic scattering theory for dark-field electron holography of 3D strain fields Axel Lubk,Elsa Javon,Nikolay Cherkashin,Shay Reboh,Christophe Gatelet al. Ultramicroscopy, 2014, 136, pp.42-49. ⟨10.1016/j.ultramic.2013.07.007⟩ Article dans une revue istex hal-01721153v1
Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO&lt;inf&gt;2&lt;/inf&gt; Charles Renard,Nikolay Cherkashin,Alexandre Jaffré,Timothée Molière,Géraldine Hallaiset al. Journal of Crystal Growth, 2014, 401, pp.554-558. ⟨10.1016/j.jcrysgro.2014.01.065⟩ Article dans une revue istex hal-01721160v1
Local stress-induced effects on AlGaAs/AlOx oxidation front shape Fares Chouchane,Guilhem Almuneau,Nikolay Cherkashin,Alexandre Arnoult,Guy Lacosteet al. Applied Physics Letters, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩ Article dans une revue hal-01721161v1
Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers François-Xavier Darras,Nikolay Cherkashin,Fuccio Cristiano,Emmanuel Scheid,Oleg Kononchuket al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩ Article dans une revue istex hal-01719500v1
Dynamical effects in strain measurements by dark-field electron holography Elsa Javon,Axel Lubk,Robin Cours,Shay Reboh,Nikolay Cherkashinet al. Ultramicroscopy, 2014, 147, pp.70-85. ⟨10.1016/j.ultramic.2014.06.005⟩ Article dans une revue istex hal-01721158v1
Local strain measurements at dislocations, disclinations and domain boundaries Martin Hÿtch,Christophe Gatel,Axel Lubk,Thibaud Denneulin,Lise Durandet al. Microscopy and Microanalysis, 2014, 20 (3), pp.1044-1045. ⟨10.1017/S1431927614006941⟩ Article dans une revue hal-01721157v1
X-ray determination of threading dislocation densities in GaN/Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt;(0001) films grown by metalorganic vapor phase epitaxy Viktor S. Kopp,Vladimir M. Kaganer,Marina V. Baidakova,Wsevolod V. Lundin,Andrey E. Nikolaevet al. Journal of Applied Physics, 2014, 115 (7), pp.073507. ⟨10.1063/1.4865502⟩ Article dans une revue hal-01721159v1
Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation A. Belafhaili,L. Laânab,Fuccio Cristiano,Nikolay Cherkashin,Alain Claverie Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩ Article dans une revue istex hal-01736024v1
Nanoscale organization by elastic interactions between H and He platelets in Si Shay Reboh,J-F. Barbot,Maxime Vallet,M.F. Beaufort,F. Rieutordet al. Journal of Applied Physics, 2013, 114 (7), pp.073517. ⟨10.1063/1.4818812⟩ Article dans une revue hal-01736021v1
Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy Nikolay Cherkashin,Shay Reboh,Martin Hÿtch,Alain Claverie,V.V. Preobrazhenskiiet al. Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩ Article dans une revue hal-01736028v1
Strain in hydrogen-implanted si investigated using dark-field electron holography Nikolay Cherkashin,Shay Reboh,Axel Lubk,Martin Hÿtch,Alain Claverie Applied Physics Express, 2013, 6 (9), ⟨10.7567/APEX.6.091301⟩ Article dans une revue hal-01736022v1
Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas Charles Renard,Nikolay Cherkashin,Alexandre Jaffré,Laetitia Vincent,A. Michelet al. Applied Physics Letters, 2013, 102 (19), pp.191915 - 191915-4. ⟨10.1063/1.4807386⟩ Article dans une revue hal-00931275v1
Effect of H-implantation in the local elastic properties of silicon crystals Shay Reboh,F. Rieutord,L. Vignoud,F. Mazen,Nikolay Cherkashinet al. Applied Physics Letters, 2013, 103 (18), pp.181911. ⟨10.1063/1.4828659⟩ Article dans une revue hal-01736023v1
Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding Nikolay Cherkashin,O. Kononchuk,Shay Reboh,Martin Hÿtch Acta Materialia, 2012, 60 (3), pp.1161-1173. ⟨10.1016/j.actamat.2011.10.054⟩ Article dans une revue istex hal-01736034v1
Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy L. Vincent,F. Fossard,T. Kociniewski,L. Largeau,Nikolay Cherkashinet al. Applied Surface Science, 2012, 258 (23), pp.9208-9212. ⟨10.1016/j.apsusc.2011.07.074⟩ Article dans une revue istex hal-01736031v1
InGaN/GaN heterostructures grown by submonolayer deposition A.F. Tsatsulnikov,W.V. Lundin,E.E. Zavarin,A.V. Sakharov,Y.G. Musikhinet al. Semiconductors, 2012, 46 (10), pp.1335-1340. ⟨10.1134/S106378261210017X⟩ Article dans une revue istex hal-01736029v1
Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices Nikolay Cherkashin,Alain Claverie,D. Sotta,J.-M. Bethoux,L. Capelloet al. Applied Physics Letters, 2012, 101 (2), pp.023105. ⟨10.1063/1.4733619⟩ Article dans une revue hal-01736033v1
Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires L. Vincent,R. Boukhicha,Nikolay Cherkashin,Shay Reboh,G. Patriarcheet al. Nanotechnology, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩ Article dans une revue istex hal-01736036v1
Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs A.F. Tsatsulnikov,W.V. Lundin,A.V. Sakharov,E.E. Zavarin,S.O. Usovet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2012, 9 (3-4), pp.774-777. ⟨10.1002/pssc.201100339⟩ Article dans une revue istex hal-01736032v1
Monolithic white LEDs: Approaches, technology, design V.M. Ustinov,A.F. Tsatsulnikov,V.V. Lundin,A.V. Sakharov,A.E. Nikolaevet al. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩ Article dans une revue hal-01736030v1
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region A.F. Tsatsulnikov,W.V. Lundin,E.E. Zavarin,A.E. Nikolaev,A.V. Sakharovet al. Semiconductors, 2012, 46 (10), pp.1281-1285. ⟨10.1134/S1063782612100168⟩ Article dans une revue istex hal-01736035v1
Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO 2 A.A. Achkeev,R.I. Khaibullin,L.R. Tagirov,A. Mackova,V. Hnatowiczet al. Physics of the Solid State, 2011, 53 (3), pp.543-553. ⟨10.1134/S1063783411030024⟩ Article dans une revue istex hal-01736037v1
InGaN/GaN short-period superlattices: synthesis, properties, applications A. F. Tsatsulnikov,W. V. Lundin,A. V. Sakharov,E. E. Zavarin,S. O. Usovet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩ Article dans une revue istex hal-01736040v1
Strain mapping in layers and devices by electron holography Martin Hÿtch,Nikolay Cherkashin,Shay Reboh,Florent Houdellier,Alain Claverie Physica Status Solidi A (applications and materials science), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩ Article dans une revue istex hal-01736038v1
Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory Nikolay Cherkashin,O. Kononchuk,Martin Hÿtch Solid State Phenomena, 2011, 178-179, pp.489-494. ⟨10.4028/www.scientific.net/SSP.178-179.489⟩ Article dans une revue hal-01736039v1
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice W.V. Lundin,A.E. Nikolaev,A.V. Sakharov,E.E. Zavarin,G.A. Valkovskiyet al. Journal of Crystal Growth, 2011, 315 (1), pp.267--271. ⟨10.1016/j.jcrysgro.2010.09.043⟩ Article dans une revue istex hal-01736042v1
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes W.V. Lundin,E.E. Zavarin,M.A. Sinitsyn,A.V. Sakharov,S.O. Usovet al. Semiconductors, 2010, 44 (1), pp.123-126. ⟨10.1134/S1063782610010215⟩ Article dans une revue istex hal-01736044v1
On the microstructure of Si coimplanted with H+ and He + ions at moderate energies Shay Reboh,F. Schaurich,A. Declemy,J-F. Barbot,M.F. Beaufortet al. Journal of Applied Physics, 2010, 108 (2), pp.023502. ⟨10.1063/1.3459884⟩ Article dans une revue hal-01736048v1
Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer F. Okba,Nikolay Cherkashin,Z. Di,M. Nastasi,F. Rossiet al. Applied Physics Letters, 2010, 97 (3), pp.31917-31917. ⟨10.1063/1.3467455⟩ Article dans une revue hal-01736050v1
The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes V.S. Sizov,A.F. Tsatsulnikov,A.V. Sakharov,W.V. Lundin,E.E. Zavarinet al. Semiconductors, 2010, 44 (7), pp.924-930. ⟨10.1134/S106378261007016X⟩ Article dans une revue istex hal-01736047v1
Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates. M. Hartmann,L. Sanchez,W. van den Daele,A. Abadie,L. Baudet al. Semiconductor Science & Technology, 2010, 25, pp.075010 Article dans une revue hal-00596336v1
Formation of composite InGaN/GaN/InAlN quantum dots A.F. Tsatsul'Nikov,E.E. Zavarin,N.V. Kryzhanovskaya,W.V. Lundin,A.V. Saharovet al. Semiconductors, 2010, 44 (10), pp.1338-1341. ⟨10.1134/S1063782610100167⟩ Article dans une revue istex hal-01736045v1
Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs J.M. Hartmann,M. Py,P.H. Morel,T. Ernst,B. Prévitaliet al. ECS Transactions, 2010, 33 (6), pp.391-407. ⟨10.1149/1.3487570⟩ Article dans une revue hal-01736046v1
Amorphization, recrystallization and end of range defects in germanium Alain Claverie,S. Koffel,Nikolay Cherkashin,Gérard Benassayag,P. Scheiblin Thin Solid Films, 2010, 518 (9), pp.2307--2313. ⟨10.1016/j.tsf.2009.09.162⟩ Article dans une revue istex hal-01736049v1
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes A.F. Tsatsulnikov,W.V. Lundin,A.V. Sakharov,E.E. Zavarin,S.O. Usovet al. Semiconductors, 2010, 44 (1), pp.93-97. ⟨10.1134/S1063782610010161⟩ Article dans une revue istex hal-01736052v1
Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)\mathsemicolon Ge surface passivation by Si J M Hartmann,A Abbadie,Nikolay Cherkashin,H Grampeix,L Clavelier Semiconductor Science and Technology, 2009, 24 (5), pp.055002. ⟨10.1088/0268-1242/24/5/055002⟩ Article dans une revue istex hal-01736056v1
Modeling and experiments on diffusion and activation of phosphorus in germanium P. Tsouroutas,D. Tsoukalas,I. Zergioti,Nikolay Cherkashin,Alain Claverie Journal of Applied Physics, 2009, 105 (9), pp.094910. ⟨10.1063/1.3117485⟩ Article dans une revue hal-01736053v1
On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates Nikolay Cherkashin,Martin Hÿtch,Florent Houdellier,Florian Hüe,Vincent Paillardet al. Applied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩ Article dans une revue hal-00417300v1
Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs A.V. Sakharov,W.V. Lundin,E.E. Zavarin,M.A. Sinitsyn,A.E. Nikolaevet al. Semiconductors, 2009, 43 (6), pp.812-817. ⟨10.1134/S1063782609060232⟩ Article dans une revue istex hal-01736055v1
End of range defects in Ge S. Koffel,Nikolay Cherkashin,Florent Houdellier,Martin Hÿtch,Gérard Benassayaget al. Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩ Article dans une revue hal-01736054v1
Diffusion and activation of phosphorus in germanium P. Tsouroutas,D. Tsoukalas,I. Zergioti,Nikolay Cherkashin,Alain Claverie Materials Science in Semiconductor Processing, 2008, 11 (5-6), pp.372--377. ⟨10.1016/j.mssp.2008.09.005⟩ Article dans une revue istex hal-01736063v1
Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics J.M. Hartmann,F. Andrieu,D. Lafond,T. Ernst,Y. Bogumilowiczet al. Materials Science and Engineering: B, 2008, 154-155 (1-3), pp.76-84. ⟨10.1016/j.mseb.2008.08.009⟩ Article dans une revue istex hal-01736060v1
Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001) S. Personnic,K.K. Bourdelle,F. Letertre,A. Tauzin,Nikolay Cherkashinet al. Journal of Applied Physics, 2008, 103 (2), pp.23508-1 - 23508-9. ⟨10.1063/1.2829807⟩ Article dans une revue hal-01736058v1
Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS Sylvie Schamm-Chardon,Caroline Bonafos,H. Coffin,Nikolay Cherkashin,Marzia Carradaet al. Ultramicroscopy, 2008, 108 (4), pp.346--357. ⟨10.1016/j.ultramic.2007.05.008⟩ Article dans une revue istex hal-01736064v1
Formation and evolution of F nanobubbles in amorphous and crystalline Si S. Boninelli,G. Impellizzeri,S. Mirabella,F. Priolo,E. Napolitaniet al. Applied Physics Letters, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩ Article dans une revue hal-01736061v1
Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H P. Nguyen,K.K. Bourdelle,C. Aulnette,F. Lallement,N. Daixet al. Journal of Applied Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩ Article dans une revue hal-01736059v1
Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation V. Ioannou-Sougleridis,P. Dimitrakis,V.Em. Vamvakas,P. Normand,Caroline Bonafoset al. Microelectronic Engineering, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩ Article dans une revue istex hal-01736069v1
Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks V. Ioannou-Sougleridis,P. Dimitrakis,V.Em. Vamvakas,P. Normand,Caroline Bonafoset al. Applied Physics Letters, 2007, 90 (26), pp.263513. ⟨10.1063/1.2752769⟩ Article dans une revue hal-01736066v1
Comparison of platelet formation in hydrogen and helium-implanted silicon Xavier Hebras,P. Nguyen,K.K. Bourdelle,F. Letertre,Nikolay Cherkashinet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, 262 (1), pp.24-28. ⟨10.1016/j.nimb.2007.04.158⟩ Article dans une revue istex hal-01736070v1
Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism Nikolay Cherkashin,Alain Claverie,Caroline Bonafos,V.V. Chaldyshev,N.A. Bertet al. Journal of Applied Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩ Article dans une revue hal-01736067v1
Defects evolution and dopant activation anomalies in ion implanted silicon Fuccio Cristiano,Y. Lamrani,F. Severac,M. Gavelle,S. Boninelliet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩ Article dans une revue istex hal-01736079v1
Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects S. Boninelli,Nikolay Cherkashin,Alain Claverie,Fuccio Cristiano Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩ Article dans une revue istex hal-01736073v1
Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops S. Boninelli,Nikolay Cherkashin,Alain Claverie,Fuccio Cristiano Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩ Article dans une revue hal-01736076v1
Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation Alain Claverie,Caroline Bonafos,Gérard Benassayag,Sylvie Schamm-Chardon,Nikolay Cherkashinet al. Defect and Diffusion Forum (Online), 2006, 258-260, pp.531-541 Article dans une revue hal-00204809v1
Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H. Coffin,Caroline Bonafos,Sylvie Schamm-Chardon,Nikolay Cherkashin,Gérard Benassayaget al. Journal of Applied Physics, 2006, 99 (4), pp.044302. ⟨10.1063/1.2171785⟩ Article dans une revue hal-01736074v1
Laser annealing for n+/p junction formation in germanium P. Tsouroutas,D. Tsoukalas,A. Florakis,I. Zergioti,A.A. Serafetinideset al. Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.644--649. ⟨10.1016/j.mssp.2006.08.013⟩ Article dans une revue istex hal-01736078v1
Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates Nikolay Cherkashin,Martin Hÿtch,Etienne Snoeck,Florian Hüe,J.M. Hartmannet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩ Article dans une revue istex hal-01736071v1
Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films M. Perego,M. Fanciulli,Caroline Bonafos,Nikolay Cherkashin Materials Science and Engineering: C, 2006, 26 (5-7), pp.835--839. ⟨10.1016/j.msec.2005.09.058⟩ Article dans une revue istex hal-01736077v1
Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate Nikolay Cherkashin,Martin Hÿtch,Etienne Snoeck,Alain Claverie,J.M. Hartmannet al. Materials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩ Article dans une revue istex hal-01736084v1
Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications Caroline Bonafos,H. Coffin,Sylvie Schamm-Chardon,Nikolay Cherkashin,Gérard Benassayaget al. Solid-State Electronics, 2005, 49 (11), pp.1734--1744. ⟨10.1016/j.sse.2005.10.001⟩ Article dans une revue istex hal-01736088v1
Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions W. Lerch,S. Paul,J. Niess,Fuccio Cristiano,Y. Lamraniet al. Journal of The Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩ Article dans une revue hal-01736089v1
SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy Y. Bogumilowicz,J.M. Hartmann,Nikolay Cherkashin,Alain Claverie,G. Rollandet al. Materials Science and Engineering: B, 2005, 124-125 (SUPPL.), pp.113-117. ⟨10.1016/j.mseb.2005.08.052⟩ Article dans une revue istex hal-01736080v1
Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications H. Coffin,Caroline Bonafos,Sylvie Schamm-Chardon,Marzia Carrada,Nikolay Cherkashinet al. Materials Science and Engineering: B, 2005, 124-125, pp.499--503. ⟨10.1016/j.mseb.2005.08.129⟩ Article dans une revue istex hal-01736081v1
Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing A. Kanjilal,J.L. Hansen,P. Gaiduk,A.N. Larsen,P. Normandet al. Applied physics. A, Materials science & processing, 2005, 81 (2), pp.363-366. ⟨10.1007/s00339-004-2924-3⟩ Article dans une revue istex hal-01736082v1
Fabrication of nanocrystal memories by ultra low energy ion implantation Nikolay Cherkashin,Caroline Bonafos,H. Coffin,Marzia Carrada,Sylvie Schamm-Chardonet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩ Article dans une revue hal-01736090v1
High germanium content SiGe virtual substrates grown at high temperatures Y. Bogumilowicz,J.M. Hartmann,F. Laugier,G. Rolland,T. Billonet al. Journal of Crystal Growth, 2005, 283 (3-4), pp.346--355. ⟨10.1016/j.jcrysgro.2005.06.036⟩ Article dans une revue istex hal-01736086v1
Structure determination of clusters formed in ultra-low energy high-dose implanted silicon Nikolay Cherkashin,Martin Hÿtch,Fuccio Cristiano,Alain Claverie Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩ Article dans une revue hal-01736085v1
Capacitance study of electron traps in low-temperature-grown GaAs P. N. Brunkov,A. A. Gutkin,A. K. Moiseenko,Yu. G. Musikhin,V. V. Chaldyshevet al. Semiconductors, 2004, 38 (4), pp.387--392. ⟨10.1134/1.1734663⟩ Article dans une revue istex hal-01736105v1
On the “Life” of {113} Defects Nikolay Cherkashin,P. Calvo,Fuccio Cristiano,B. de Mauduit,Alain Claverie MRS Online Proceedings Library, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩ Article dans une revue hal-01736093v1
Ion beam induced defects in crystalline silicon Fuccio Cristiano,Nikolay Cherkashin,Xavier Hebras,P. Calvo,Y. Lamraniet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩ Article dans une revue istex hal-01736101v1
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation Caroline Bonafos,Marzia Carrada,Nikolay Cherkashin,H. Coffin,D. Chassainget al. Journal of Applied Physics, 2004, 95 (10), pp.5696-5702. ⟨10.1063/1.1695594⟩ Article dans une revue hal-01736103v1
Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions Fuccio Cristiano,Nikolay Cherkashin,P. Calvo,Y. Lamrani,Xavier Hebraset al. Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩ Article dans une revue istex hal-01736096v1
Depth dependence of defect evolution and TED during annealing B. Colombeau,N.E.B. Cowern,Fuccio Cristiano,P. Calvo,Y. Lamraniet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94 Article dans une revue hal-00140976v1
Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology T. Müller,K.-H. Heinig,W. Möller,Caroline Bonafos,H. Coffinet al. Applied Physics Letters, 2004, 85 (12), pp.2373-2375 Article dans une revue hal-01736097v1
Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate A. Wellner,Vincent Paillard,H. Coffin,Nikolay Cherkashin,Caroline Bonafos Journal of Applied Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩ Article dans une revue hal-01736095v1
Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle Silke Paul,Wilfried Lerch,Xavier Hebras,Nikolay Cherkashin,Fuccio Cristiano MRS Online Proceedings Library, 2004, 810, ⟨10.1557/proc-810-c5.4⟩ Article dans une revue hal-01736104v1
Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution P. Calvo,Alain Claverie,Nikolay Cherkashin,B. Colombeau,Y. Lamraniet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩ Article dans une revue istex hal-01736098v1
Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures M. V. Maksimov,D. S. Sizov,A. G. Makarov,I. N. Kayander,L. V. Asryanet al. Semiconductors, 2004, 38 (10), pp.1207--1211. ⟨10.1134/1.1808830⟩ Article dans une revue istex hal-01736102v1
High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes Y. Bogumilowicz,J.M. Hartmann,J.F. Damlencourt,B. Vandelle,A. Abbadieet al. Proceedings - Electrochemical Society, 2004, 7, pp.665-679 Article dans une revue hal-01736107v1
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P. Normand,E. Kapetanakis,P. Dimitrakis,D. Skarlatos,K. Beltsioset al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩ Article dans une revue istex hal-01736094v1
Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers Marzia Carrada,Nikolay Cherkashin,Caroline Bonafos,Gérard Benassayag,D. Chassainget al. Materials Science and Engineering: B, 2003, 101 (1-3), pp.204-207. ⟨10.1016/S0921-5107(02)00724-9⟩ Article dans une revue istex hal-01736116v1
Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis P. Normand,E. Kapetanakis,P. Dimitrakis,D. Tsoukalas,K. Beltsioset al. Applied Physics Letters, 2003, 83 (1), pp.168-170. ⟨10.1063/1.1588378⟩ Article dans une revue hal-01736112v1
Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode Nikolay Cherkashin,M. V. Maksimov,A. G. Makarov,V. A. Shchukin,V. M. Ustinovet al. Semiconductors, 2003, 37 (7), pp.861--865. ⟨10.1134/1.1592865⟩ Article dans une revue istex hal-01736113v1
Clusters formation in ultralow-energy high-dose boron-implanted silicon Fuccio Cristiano,Xavier Hebras,Nikolay Cherkashin,Alain Claverie,W. Lerchet al. Applied Physics Letters, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩ Article dans une revue hal-01736115v1
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A. Kanjilal,J.L. Hansen,P. Gaiduk,A.N. Larsen,Nikolay Cherkashinet al. Applied Physics Letters, 2003, 82 (8), pp.1212-1214. ⟨10.1063/1.1555709⟩ Article dans une revue hal-01736109v1
Polarized micro-photoluminescence spectroscopy of GaN nanocolumns T.V. Shubina,V.N. Jmerik,S.V. Ivanov,D.D. Solnyshkov,Nikolay Cherkashinet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2003, 7, pp.2602-2605. ⟨10.1002/pssc.200303330⟩ Article dans une revue istex hal-01736108v1
Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon B. Colombeau,N.E.B. Cowern,Fuccio Cristiano,P. Calvo,Nikolay Cherkashinet al. Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩ Article dans une revue hal-01736110v1
Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology T. Müller,K.-H. Heinig,Caroline Bonafos,H. Coffin,Nikolay Cherkashinet al. Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. ⟨10.1557/PROC-792-R8.7⟩ Article dans une revue hal-01736111v1
Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis P. Normand,E. Kapetanakis,P. Dimitrakis,D. Skarlatos,D. Tsoukalaset al. Microelectronic Engineering, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩ Article dans une revue istex hal-01736114v1
The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix D. S. Sizov,M. V. Maksimov,A. F. Tsatsul'Nikov,Nikolay Cherkashin,N. V. Kryzhanovskayaet al. Semiconductors, 2002, 36 (9), pp.1020--1026. ⟨10.1134/1.1507285⟩ Article dans une revue istex hal-01736122v1
Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures A.A. Tonkikh,V.A. Egorov,N.K. Polyakov,G.?. Tsyrlin,B.V. Voloviket al. Technical Physics Letters, 2002, 28 (3), pp.191-193. ⟨10.1134/1.1467272⟩ Article dans une revue istex hal-01736119v1
Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime B. Bayha,S. Paul,W. Lerch,D.F. Downey,E.A. Arevaloet al. Proceedings of the International Conference on Ion Implantation Technology, 2002, 22-27-September-2002, pp.618-621. ⟨10.1109/IIT.2002.1258081⟩ Article dans une revue hal-01736121v1
Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs N.A. Bert,Nikolay Cherkashin,V.V. Chaldyshev,Alain Claverie,V.V. Preobrazhenskiiet al. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 2002, pp.233-236. ⟨10.1109/SIM.2002.1242762⟩ Article dans une revue hal-01736118v1
InGaAs nanodomains formed in situ on the surface of (Al,Ga)As I.L. Krestnikov,Nikolay Cherkashin,D.S. Sizov,D.A. Bedarev,I.V. Kochnevet al. Technical Physics Letters, 2001, 27 (3), pp.233-235. ⟨10.1134/1.1359837⟩ Article dans une revue istex hal-01736125v1
Reversibility of the island shape, volume and density in Stranski-Krastanow growth N N Ledentsov,V A Shchukin,D Bimberg,V M Ustinov,Nikolay Cherkashinet al. Semiconductor Science and Technology, 2001, 16 (6), pp.502--506. ⟨10.1088/0268-1242/16/6/316⟩ Article dans une revue istex hal-01736128v1
Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy V. V. Mamutin,Nikolay Cherkashin,V. A. Vekshin,V. N. Zhmerik,S. V. Ivanov Physics of the Solid State, 2001, 43 (1), pp.151--156. ⟨10.1134/1.1340201⟩ Article dans une revue istex hal-01736127v1
Optical and structural properties of self-organized InGaAsN/GaAs nanostructures B V Volovik,a R Kovsh,W Passenberg,H Kuenzel,N Groteet al. Semiconductor Science and Technology, 2001, 16 (3), pp.186--190. ⟨10.1088/0268-1242/16/3/312⟩ Article dans une revue istex hal-01736129v1
Photoluminescence emission (1.3-1.4 ?m) from quantum dots heterostructures based on GaAs V.A. Egorov,N.K. Polyakov,A.A. Tonkikh,V.N. Petrov,G.E. Cirlinet al. Applied Surface Science, 2001, 175-176, pp.243-248 Article dans une revue hal-01736123v1
Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 ?m range N.D. Zakharov,P. Werner,U. Gösele,N.N. Ledentsov,D. Bimberget al. Materials Research Society Symposium - Proceedings, 2001, 672, pp.O8.5.1-O8.5.6 Article dans une revue hal-01736124v1
Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands M.M. Sobolev,I.V. Kochnev,V.M. Lantratov,N.A. Bert,Nikolay Cherkashinet al. Semiconductors, 2000, 34 (2), pp.195-204. ⟨10.1134/1.1187932⟩ Article dans une revue istex hal-01736130v1
Influence of annealing on the formation of inGaAs quantum dots in GaAs matrix during metal organic chemical vapor deposition Nikolay Cherkashin,N.A. Bert,N.N. Ledentsov,I.V. Kochnev,V.M. Lantratovet al. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.117-120 Article dans une revue hal-01736134v1
1.3 \mathrmμm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition N N Ledentsov,M V Maximov,D Bimberg,T Maka,C M Sotomayor Torreset al. Semiconductor Science and Technology, 2000, 15 (6), pp.604--607. ⟨10.1088/0268-1242/15/6/320⟩ Article dans une revue istex hal-01736135v1
Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition I.L. Krestnikov,N.N. Ledentsov,M.V. Maximov,D. Bimberg,D.A. Bedarevet al. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358 Article dans une revue hal-01736132v1
TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate Nikolay Cherkashin,N.A. Bert,Yu.G. Musikhin,S.V. Novikov,T.S. Chenget al. Semiconductors, 2000, 34 (8), pp.867-871. ⟨10.1134/1.1188090⟩ Article dans une revue istex hal-01736131v1
Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots M.M. Sobolev,I.V. Kochnev,V.M. Lantratov,Nikolay Cherkashin,V.V. Emtsev Physica B: Condensed Matter, 1999, 273-274, pp.959-962 Article dans une revue hal-01736136v1

Communication dans un congrès (51)

Solid and Liquid State Dewetting of Thin Silicon Films Sandwiched between Two Silicon Carbide Substrates Maëlle Le Cunff,Nikolay Cherkashin,Francois Rieutord,Didier Landru,Oleg Kononchuk 244th ECS Meeting, Oct 2023, Gothenburg, Sweden. pp.1623-1623, ⟨10.1149/MA2023-02331623mtgabs⟩ Communication dans un congrès hal-04735314v1
Polarization pattern at the atomic scale in ferroelectric BaTiO3 under different boundary conditions by HRSTEM Beatriz Rodrigues Canabarro,Ibukun Olaniyan,Dong Jik Kim,Sebastian Schmitt,César Magenet al. IMF 2023 - The 15th International Meeting on Ferroelectricity, Mar 2023, Tel AViv, Israel Communication dans un congrès hal-04253508v1
Novel approach for displacement and strain mapping from HR-(S)TEM images of crystalline materials Nikolay Cherkashin Microscopy of Semi-Conducting Materials Conference 2023, Thomas Walther, Rachel A Oliver, Apr 2023, Cambridge (GB), United Kingdom Communication dans un congrès hal-04258683v1
Polarization pattern at the atomic scale in ferroelectric BaTiO3 under different boundary conditions by HRSTEM Beatriz Rodrigues Canabarro,Teresa Hungria,Ibukun Olaniyan,Dong Jik Kim,Sebastian Schmittet al. CSBMM and CIASEM 2023, Nov 2023, Olinda, Brazil Communication dans un congrès hal-04253523v1
Reciprocal space-based method for quantitative mapping of strain, absolute and polarization related displacement fields in HR-STEM images of ferroelectrics Nikolay Cherkashin,Antonin Louiset,Adrian Chmielewski,Dong Jik Kim,Catherine Dubourdieuet al. IMF 2023 - The 15th International Meeting on Ferroelectricity, Mar 2023, Tel AViv, Israel Communication dans un congrès hal-04253511v1
Fabrication of barium titanate nanopillars by neon ion milling Ibukun Olaniyan,S.W. Schmitt,Javier Garcia-Fernandez,J. Albert,Veeresh Deshpandeet al. IEEE ISAF 2022, Jun 2022, Tours, France Communication dans un congrès hal-03750458v1
Quantitative mapping of strain and displacement fields in complex oxides by STEM studies Nikolay Cherkashin Emergent phenomena in low-dimensional ferroelectric structures, May 2022, Berlin, Germany Communication dans un congrès hal-03698690v1
Determination of intrinsic strain tensor components in nanostructures from HR-(S)TEM images in absence of reference lattice Nikolay Cherkashin GADEST-19, Sep 2022, Mondsee, Austria Communication dans un congrès hal-03814716v1
Time-Resolved Cathodoluminescence in a Transmission Electron Microscope Sophie Meuret,Nikolay Cherkashin,L. H. G. Tizei,Yves Auad,Sébastien J. Weberet al. 11th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2021), Jul 2021, Warsaw, Poland Communication dans un congrès hal-04449931v1
Transfer of Si and LiTaO3 thin layers: physics behind a fracture of materials by SmartCutTM technology Nikolay Cherkashin International conference PhysicA.SPb/2020, Oct 2020, Saint-Petersbourg, Russia Communication dans un congrès hal-03019217v1
Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180deg C Nikolay Ledentsov,Lukasz Chorchos,Oleg Makarov,Jörg-Reinhardt Kropp,Vitaly Shchukinet al. Vertical-Cavity Surface-Emitting Lasers XXIV, Feb 2020, San Francisco, United States. pp.15, ⟨10.1117/12.2543244⟩ Communication dans un congrès hal-03375527v1
Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells Denis Mencaraglia,Charles Renard,Nikolay Cherkashin,G. Hallais,Alexandre Jaffréet al. 36th European Photovoltaic Solar Energy Conference and Exhibition, WIP, Sep 2019, Marseille, France. pp.757, ⟨10.4229/EUPVSEC20192019-3BV.2.49⟩ Communication dans un congrès hal-02343896v1
Quantitative strain distribution in electromechanically coupled IV-IV and III-V semiconductor quantum dots Nikolay Cherkashin MGCTF 2019, Jul 2019, Saint Petersbourg, Russia Communication dans un congrès hal-02304422v1
Strain measurements and mapping with a nanometer resolution and high precision at the most basic conventional TEM: moiré based technique by specimen design Nikolay Cherkashin Energy Materials Nanotechnology (EMN 2018), May 2018, Heraklion, Greece Communication dans un congrès hal-01763087v1
Advanced methods for strain measurement in crystalline nanomaterials: application to multilayer InAlGaP quantum dots formed on high-index (11l)GaAs substrates” Nikolay Cherkashin,V.A. Shchukin,Nikolai N. Ledentsov XXVII International Materials Research Congress (IMRC 2018), Aug 2018, Cancun, Mexico Communication dans un congrès hal-01773833v1
New developments of the SmartCut process for slicing thin layers Alain Claverie,Nikolay Cherkashin EMN Conference, May 2018, Héraklion, Greece Communication dans un congrès hal-01767500v1
Advanced methods for strain measurements in crystalline materials by transmission electron microscopy”, Nanostructures: Physics and Technology Nikolay Cherkashin 26th Intern. Symposium, Jun 2018, Minsk, Belarus Communication dans un congrès hal-01767536v1
Materials science behind the Smart Cut process Nikolay Cherkashin,François-Xavier Darras,Nabil Daghbouj,Alain Claverie 22nd Intern. Conf. on Ion Implantation Technology (IIT 2018), Sep 2018, Würzburg, Germany Communication dans un congrès hal-01767778v1
Sequential He++H+ ion implantation in silicon: factors affecting blistering” Nikolay Cherkashin,Nabil Daghbouj,Alain Claverie 4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India Communication dans un congrès hal-01763083v1
. Effect of the Order of He and H Ion Sequential Implantations on Damage Generation and Subsequent Thermal Evolution of Defects in Silicon Alain Claverie,Nikolay Cherkashin SMMIB 2017, 2017, Lisbonne, Portugal Communication dans un congrès hal-01763581v1
Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates N.N. Ledentsov,V.A. Shchukin,Y.M. Shernyakov,M.M. Kulagina,A.S. Payusovet al. SPIE LASE 2017, High-Power Diode Laser Technology XV, Jan 2017, San Francisco, United States. ⟨10.1117/12.2252957⟩ Communication dans un congrès hal-01736016v1
The materials science behind the Smart Cut process Alain Claverie,Nikolay Cherkashin IWPSD 2017, 2017, New Delhi, India Communication dans un congrès hal-01763588v1
Blistering of silicon surfaces due to very low energy H and He co-implantation Alain Claverie,Nabil Daghbouj,Nikolay Cherkashin EMN Conference, May 2016, Dubrovnic, Croatia Communication dans un congrès hal-01763096v1
MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs Nikolay Cherkashin,Martin Hÿtch,Maxim Korytov,Daniele Barettin,A. V. Sakharovet al. Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia Communication dans un congrès hal-01763074v1
Advanced characterization of semiconductors Nikolay Cherkashin,François-Xavier Darras,Maxim Korytov,Christophe Gatel,Martin Hÿtch XV B-MRS, Sep 2016, Campinas, Brazil Communication dans un congrès hal-01767758v1
Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces N.N. Ledentsov,V.A. Shchukin,J. Lyytikäinen,O. Okhotnikov,Nikolay Cherkashinet al. SPIE OPTO 2015, Feb 2015, San Francisco, United States. ⟨10.1117/12.2083953⟩ Communication dans un congrès hal-01736019v1
Realistic model of LED structure with InGaN quantum-dots active region Daniele Barettin,Matthias auf Der Maur,Alessandro Pecchia,Walter Rodrigues,Andrei F. Tsatsulnikovet al. Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩ Communication dans un congrès hal-01721150v1
Measurement of crystalline lattice strain by transmission electron microscopy” Nikolay Cherkashin,Florent Houdellier,Martin Hÿtch,Maxim Korytov 14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France Communication dans un congrès hal-01763051v1
Strain imaging of processed layers and devices by dark field electron holography Alain Claverie,Victor Boureau,Martin Hÿtch,Nikolay Cherkashin Congress of the Electron Microscopy Society of India, Jul 2014, ??, India Communication dans un congrès hal-01763638v1
Extended defects in ion-implanted si during nanosecond laser annealing Fuccio Cristiano,Y. Qiu,Eléna Bedel-Pereira,Karim Huet,Fulvio Mazzamutoet al. Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩ Communication dans un congrès hal-01721156v1
Defects and Strain imaging of ion implanted materials Alain Claverie,Nikolay Cherkashin Ion Implantation Technology 2014, Jun 2014, Portland, United States Communication dans un congrès hal-01763647v1
Route toward III-V multispectral solar cells on silicon Timothée Molière,Charles Renard,Alexandre Jaffré,Laetitia Vincent,Daniel Bouchieret al. E-MRS Spring Meeting 2014, European Materials Research Society, May 2014, Lille, France Communication dans un congrès hal-01099576v1
Optoelectronic structures with InAlN layers grown by MOVPE A.V. Sakharov,W.V. Lundin,E.E. Zavarin,M.A. Sinitsyn,S.O. Usovet al. 30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩ Communication dans un congrès hal-01736041v1
Determination of strain within Si1-yCy layers grown by CVD on a Si substrate Nikolay Cherkashin,A. Gouye,Florian Hüe,Florent Houdellier,Martin Hÿtchet al. Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩ Communication dans un congrès hal-01736057v1
Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs A.F. Tsatsulnikov,W.V. Lundin,A.V. Sakharov,E.E. Zavarin,S.O. Usovet al. PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩ Communication dans un congrès hal-01736043v1
Strain Mapping of Layers and Devices Using Electron Holography Alain Claverie,Nikolay Cherkashin,Florian Hüe,Shay Reboh,Florent Houdellieret al. ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩ Communication dans un congrès hal-01736051v1
Crystalline Structure of HfZrO Thin Films and ZrO2 / HfO2 bi-Layers Grown by AVD for MOS Applications Sandrine Lhostis,Clement Gaumer,Caroline Bonafos,Sylvie Schamm-Chardon,Nikolay Cherkashinet al. ECS Transactions, 2008, Unknown, Unknown Region. ⟨10.1149/1.2911489⟩ Communication dans un congrès hal-01736062v1
Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate Nikolay Cherkashin,Adrien Gouye,Florian Hüe,Florent Houdellier,Martin Hÿtchet al. ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩ Communication dans un congrès hal-01736065v1
Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation Alain Claverie,Caroline Bonafos,Gérard Benassayag,Sylvie Schamm-Chardon,Nikolay Cherkashinet al. 2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal Communication dans un congrès hal-00115744v1
Review of some critical aspects of Ge and GeOI substrates L. Clavelier,C. Deguet,C. Le Royer,B. Vincent,J.-F. Damlencourtet al. Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩ Communication dans un congrès hal-01736072v1
Time dependence study of hydrogen-induced defects in silicon during thermal anneals S. Personnic,A. Tauzin,K.K. Bourdelle,F. Letertre,N. Kernevezet al. 16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. pp.65-68, ⟨10.1063/1.2401463⟩ Communication dans un congrès hal-01736075v1
Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing A.N. Larsen,A. Kanjilal,J.L. Hansen,P. Gaiduk,P. Normandet al. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.263-267, ⟨10.1557/PROC-830-D6.2⟩ Communication dans un congrès hal-01736092v1
Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers H. Coffin,Caroline Bonafos,Sylvie Schamm-Chardon,Nikolay Cherkashin,Marc Respaudet al. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.281-286, ⟨10.1557/PROC-830-D6.6⟩ Communication dans un congrès hal-01736087v1
Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS O. Weber,Y. Bogumilowicz,T. Ernst,J.-M. Hartmann,F. Ducroquetet al. IEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩ Communication dans un congrès hal-01736083v1
Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications Caroline Bonafos,Nikolay Cherkashin,Marzia Carrada,H. Coffin,Gérard Benassayaget al. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.217-222, ⟨10.1557/PROC-830-D5.2⟩ Communication dans un congrès hal-01736091v1
Activation, diffusion and defect analysis of a spike anneal thermal cycle Silke Paul,Wilfried Lerch,Xavier Hebras,Nikolay Cherkashin,Fuccio Cristiano Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩ Communication dans un congrès hal-01736106v1
Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions R. El Farhane,C. Laviron,Fuccio Cristiano,Nikolay Cherkashin,P. Morinet al. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩ Communication dans un congrès hal-01736099v1
Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions W. Lerch,S. Paul,J. Niess,Fuccio Cristiano,Y. Lamraniet al. Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105 Communication dans un congrès hal-01736100v1
Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon Alain Claverie,Fuccio Cristiano,B. Colombeau,Xavier Hebras,P. Calvoet al. 2003, pp.73 Communication dans un congrès hal-00146421v1
High luminescence efficiency from GaAsN layers grown by MBE with RF nitrogen plasma source V.M. Ustinov,Nikolay Cherkashin,N.A. Bert,A.F. Tsatsul'Nikov,A.R. Kovshet al. Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications, 2001, Boston, United States. pp.35-40, ⟨10.1557/PROC-692-H1.10.1⟩ Communication dans un congrès hal-01736117v1
1.3-\upmum edge- and surface-emitting quantum dot lasers grown on GaAs substrates Victor M. Ustinov,Alexey E. Zhukov,Nikolay A. Maleev,Anton Y. Egorov,Alexey R. Kovshet al. Physics and Simulation of Optoelectronic Devices X, 2002, Unknown, Unknown Region. ⟨10.1117/12.470541⟩ Communication dans un congrès hal-01736120v1

Poster de conférence (1)

Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells Denis Mencaraglia,Charles Renard,J.P. Connolly,Nikolay Cherkashin,G. Hallaiset al. JNPV 2019, Dec 2019, Dourdan, France Poster de conférence hal-02344131v1

Chapitre d'ouvrage (2)

Characterization of Process-Induced Defects Nikolay Cherkashin,Alain Claverie Alain Claverie ; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.165--198, 2013, ⟨10.1002/9781118579022.ch7⟩ Chapitre d'ouvrage hal-01736027v1
Dark-Field Electron Holography for Strain Mapping Martin Hÿtch,Florent Houdellier,Nikolay Cherkashin,Shay Reboh,Elsa Javonet al. Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩ Chapitre d'ouvrage hal-01736026v1

HDR (1)

Précipitation sous contrainte dans les semiconducteurs Obtention De,Nikolay Cherkashin Science des matériaux [cond-mat.mtrl-sci]. Univesité Toulouse III- Paul Sabatier; Ecole doctorale Sciences de la matière; Section CNU Milieux denses et matériaux, 2017 HDR tel-01800161v1