Noelle Gogneau CNRS Research Director : III-Nitride Nanowires for nanoenergy applications

Présentation

Publications

Article dans une revue (49)

Flexible piezoelectric energy harvester made of vertically-aligned ZnO nanowires hydrothermally-grown by template-assisted synthesis in poled PVDF Marie Clémence Sigallon,Adrien Baillard,Vincent Consonni,Florian Aubrit,Natalia Potrzebowskaet al. Nano Trends, 2025, 10, pp.100112. ⟨10.1016/j.nwnano.2025.100112⟩ Article dans une revue hal-05234175v1
Two-step growth procedure for homogeneous GaN NW arrays on graphene Dyhia Tamsaout,Edmond Cambril,Laurent Travers,Ali Madouri,Noëlle Gogneauet al. Nanotechnology, 2025, 36 (13), pp.135604. ⟨10.1088/1361-6528/adb3ad⟩ Article dans une revue hal-04954865v1
Comparative analysis of electric potential in p-GaN/InGaN/n-GaN nanowire LEDs Anitha Jose,Arup K Kunti,Nuno Amador-Mendez,Tiphaine Mathieu-Pennober,Laurent Traverset al. Nanotechnology, 2025, 36 (24), pp.245702. ⟨10.1088/1361-6528/add741⟩ Article dans une revue hal-05232881v1
The surface charge effects: A route to the enhancement of the piezoelectric conversion efficiency in GaN nanowires N Gogneau,Pascal Chrétien,Tanbir Kaur Sodhi,Quang Chieu Bui,A Chevillardet al. Nano Trends, 2025, 9, pp.100082. ⟨10.1016/j.nwnano.2025.100082⟩ Article dans une revue hal-04965536v1
Surface Charge: An Advantage for the Piezoelectric Properties of GaN Nanowires Tanbir Kaur Sodhi,Pascal Chrétien,Quang Chieu Bui,Amaury Chevillard,Laurent Traverset al. Nanoenergy Advances, 2024, 4 (2), pp.133-146. ⟨10.3390/nanoenergyadv4020008⟩ Article dans une revue (article de synthèse) hal-04569902v1
Effect of Chlorine Doping on ZnSe Thin Films and Photovoltaic Devices Tamara Potlog,Ivan Gadiac,Noëlle Gogneau,Lucian Pintilie Modern Concepts in Material Science, 2024, 7 (1), ⟨10.33552/MCMS.2024.07.000653⟩ Article dans une revue hal-05439591v1
Field-dependent Abundances of Hydride Molecular Ions in Atom Probe Tomography of III-N Semiconductors Aissatou Diagne,Luis Gonzalez Garcia,Samba Ndiaye,Noëlle Gogneau,Maria Vrellouet al. Journal of Microscopy, 2024, 293 (3), pp.153-159. ⟨10.1111/jmi.13233⟩ Article dans une revue hal-04736491v1
Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications Mohammed Benjelloun,Zahraa Zaidan,Ali Soltani,Noëlle Gogneau,Denis Morriset al. IEEE Access, 2023, 11, pp.40249 - 40257. ⟨10.1109/access.2023.3248630⟩ Article dans une revue hal-04300060v2
What Triggers Epitaxial Growth of GaN on Graphene? Camille Barbier,Ludovic Largeau,Noëlle Gogneau,Laurent Travers,Christophe Davidet al. Crystal Growth & Design, 2023, 23 (9), pp.6517-6525. ⟨10.1021/acs.cgd.3c00481⟩ Article dans une revue hal-04173825v1
Enhancement of Single‐Photon Purity and Coherence of III‐Nitride Quantum Dot with Polarization‐Controlled Quasi‐Resonant Excitation Seongmoon Jun,Minho Choi,Baul Kim,Martina Morassi,Maria Tchernychevaet al. Small, 2023, 19 (5), pp.2205229. ⟨10.1002/smll.202205229⟩ Article dans une revue hal-04300011v1
Investigating the Secondary Electron Emission of Nanomaterials Induced by a High‐Resolution Proton Beam Marian Cholewa,Anna Grędysa,Andrii Pozaruk,Thomas Osipowicz,Jeroen van Kanet al. physica status solidi (b), 2022, 259 (4), pp.2100445. ⟨10.1002/pssb.202100445⟩ Article dans une revue hal-03853950v1
Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects Noelle Gogneau,Pascal Chrétien,Tanbir Sodhi,Laurent Couraud,Laetitia Leroyet al. Nanoscale, 2022, 14 (13), pp.4965-4976. ⟨10.1039/d1nr07863a⟩ Article dans une revue hal-03719768v1
Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors Lorenzo Rigutti,Enrico Di Russo,Florian Chabanais,Ivan Blum,Jonathan Houardet al. Journal of Physical Chemistry C, 2021, 125 (31), pp.17078-17087. ⟨10.1021/acs.jpcc.1c04778⟩ Article dans une revue hal-03448318v1
The elevated colour rendering of white-LEDs by microwave-synthesized red-emitting (Li, Mg) 3 RbGe 8 O 18 :Mn 4+ nanophosphors Malini Abraham,Arup Kunti,Thejas K.K.,Nuño Amador-Mendez,Noëlle Gogneauet al. Dalton Transactions, 2021, 50 (8), pp.3044-3059. ⟨10.1039/D0DT04309E⟩ Article dans une revue hal-03448331v1
Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005) L Mancini,M Morassi,C Sinito,O Brandt,L Geelhaaret al. Nanotechnology, 2020, 31 (45), pp.459501. ⟨10.1088/1361-6528/abaade⟩ Article dans une revue hal-03084748v1
Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecularbeam epitaxy Omar Saket,Junkang Wang,Nuno Amador-Mendez,Martina Morassi,Arup Kuntiet al. Nanotechnology, 2020, ⟨10.1088/1361-6528/abc91a⟩ Article dans une revue hal-03019946v1
A Transient Grating Method to Measure the Dispersion of Elastic Waves in Nanostructures E. Charron,L. N. Lu,B. Bonello,O. Boyko,E. Glushkovet al. Journal of Physics: Conference Series, 2020, 1461, pp.012022. ⟨10.1088/1742-6596/1461/1/012022⟩ Article dans une revue hal-03024947v1
Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes Nan Guan,Nuño Amador-Mendez,Arup Kunti,Andrey Babichev,Subrata Daset al. Nanomaterials, 2020, 10 (11), pp.2271. ⟨10.3390/nano10112271⟩ Article dans une revue hal-03019913v1
In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene Camille Barbier,Tao Zhou,Gilles Renaud,Patrick Le Fèvre,Frank Glaset al. Crystal Growth & Design, 2020, 20 (6), pp.4013-4019. ⟨10.1021/acs.cgd.0c00306⟩ Article dans une revue hal-03008961v1
GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors Quang Chieu Bui,Ludovic Largeau,Martina Morassi,Nikoletta Jegenyes,Olivia Mauguinet al. Applied Sciences, 2019, 9 (17), pp.3528. ⟨10.3390/app9173528⟩ Article dans une revue hal-02385613v1
1D Nanostructure-Based Piezo-Generators Noelle Gogneau Nanomaterials, 2019, ⟨10.3390/nano9101474⟩ Article dans une revue hal-02385605v1
Selective Area Growth of GaN Nanowires on Graphene Nanodots Martina Morassi,Nan Guan,Vladimir G Dubrovskii,Yuri Berdnikov,Camille Barbieret al. Crystal Growth & Design, 2019, 20 (2), pp.552-559. ⟨10.1021/acs.cgd.9b00556⟩ Article dans une revue hal-03048504v1
Optical properties of GaN nanowires grown on chemical vapor deposited-graphene L. Mancini,M Morassi,C. Sinito,O Brandt,L. Geelhaaret al. Nanotechnology, 2019, 30 (21), pp.214005. ⟨10.1088/1361-6528/ab0570⟩ Article dans une revue hal-02349609v1
Selective Area Growth of GaN Nanowires on Graphene Nanodots Martina Morassi,Nan Guan,Vladimir Dubrovskii,Yury Berdnikov,Camille Barbieret al. Crystal Growth & Design, 2019, 20 (2), pp.552-559. ⟨10.1021/acs.cgd.9b00556⟩ Article dans une revue hal-03024971v1
Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques Valerio Piazza,Andrey Babichev,Lorenzo Mancini,Martina Morassi,Patrick Quachet al. Nanotechnology, 2019, 30 (21), pp.214006. ⟨10.1088/1361-6528/ab055e⟩ Article dans une revue hal-02182873v1
Colour optimization of phosphor-converted flexible nitride nanowire white light emitting diodes Nan Guan,Nuño Amador-Mendez,Junkang Wang,Subrata Das,Akanksha Kapooret al. Journal of Physics: Photonics, 2019, 1 (3), pp.035003. ⟨10.1088/2515-7647/ab2c84⟩ Article dans une revue hal-02299781v1
Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy Martina Morassi,Ludovic Largeau,Fabrice Oehler,Hyun-Gyu Song,Laurent Traverset al. Crystal Growth & Design, 2018, 18 (4), pp.2545-2554. ⟨10.1021/acs.cgd.8b00150⟩ Article dans une revue hal-02385645v1
High piezoelectric conversion properties of axial InGaN/GaN nanowires Nicoletta Jegenyes,Martina Morassi,Pascal Chrétien,Laurent Travers,L Luet al. Nanomaterials, 2018, 8 (6), pp.367. ⟨10.3390/nano8060367⟩ Article dans une revue hal-01798270v1
Probing elastic properties of nanowire-based structures L. Lu,E. Charron,E. Glushkov,N. Glushkova,B. Bonelloet al. Applied Physics Letters, 2018, 113 (16), pp.161903 (2018). ⟨10.1063/1.5045665⟩ Article dans une revue hal-01913851v1
High Frequency Elastic Properties of Nitride Nanowires-Based Structures O. Boyko,E. Charron,B. Bonello,L. Lu,M. Tchernychevaet al. Journal of Physics: Conference Series, 2018, 1092, pp.012014. ⟨10.1088/1742-6596/1092/1/012014⟩ Article dans une revue hal-02385637v1
Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography Enrico Di Russo,F. Moyon,N. Gogneau,L. Largeau,E. Giraudet al. Journal of Physical Chemistry C, 2018, 122 (29), pp.16704--16714. ⟨10.1021/acs.jpcc.8b03223⟩ Article dans une revue hal-01928844v1
Evaluation of Effective Elastic Properties of Nitride NWs/Polymer Composite Materials Using Laser-Generated Surface Acoustic Waves Evgeny Glushkov,Natalia Glushkova,Bernard Bonello,Lu Lu,Eric Charronet al. Applied Sciences, 2018, 8 (11), pp.2319. ⟨10.3390/app8112319⟩ Article dans une revue hal-01954341v1
Light emission from localised point defects induced in GaN crystal by a femtosecond-pulsed laser Umar Saleem,Muhammad Danang Birowosuto,Songyan Hou,Ange Maurice,Tay Beng Kanget al. Optical Materials Express, 2018, 8 (9), pp.2703. ⟨10.1364/OME.8.002703⟩ Article dans une revue hal-02385641v1
Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition Umar Saleem,Muhammad Danang Birowosuto,Noelle Gogneau,Philippe Coquet,Maria Tchernychevaet al. Optical Materials Express, 2017, 7 (6), pp.1995. ⟨10.1364/OME.7.001995⟩ Article dans une revue hal-02385654v1
Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact Nicolas Jamond,Pascal Chrétien,Lina Gatilova,Elisabeth Galopin,Laurent Traverset al. Nanoscale, 2017, 9 (13), pp.4610 - 4619. ⟨10.1039/c7nr00647k⟩ Article dans une revue hal-01501840v1
Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 ) Hugo Henck,Zeineb Ben Aziza,Olivia Zill,Debora Pierucci,Carl H. Nayloret al. Physical Review B, 2017, 96 (11), ⟨10.1103/PhysRevB.96.115312⟩ Article dans une revue hal-01668118v1
Piezo-generator integrating a vertical array of GaN nanowires N C Jamond,Pascal Chrétien,Frédéric Houzé,Lu Lu,L Largeauet al. Nanotechnology, 2016, 27, pp.325403. ⟨10.1088/0957-4484/27/32/325403⟩ Article dans une revue hal-01390969v1
Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem Lorenzo Rigutti,L. Mancini,Enrico Di Russo,Ivan Blum,F. Moyonet al. Microscopy and Microanalysis, 2016, 22 (S3), pp.650-651. ⟨10.1017/S1431927616004104⟩ Article dans une revue hal-01954232v1
From single III-nitride nanowires to piezoelectric generators: New route for powering nomad electronics Noëlle Gogneau,Nicolas Jamond,Pascal Chrétien,Frédéric Houzé,Elie Lefeuvreet al. Semiconductor Science and Technology, 2016, 31, pp.103002. ⟨10.1088/0268-1242/31/10/103002⟩ Article dans une revue hal-01390955v1
Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates Vladimir Neplokh,Ahmed Ali,François H. Julien,Martin Foldyna,Ivan Mukhinet al. Materials Science in Semiconductor Processing, 2016, 55, pp.72 - 78. ⟨10.1016/j.mssp.2016.03.002⟩ Article dans une revue istex hal-01401078v1
Large area graphene nanomesh: an artificial platform for edge-electrochemical biosensing at the sub-attomolar level Bacem Zribi,Juan-Manuel Castro-Arias,Dominique Decanini,Noëlle Gogneau,Diana Dragoeet al. Nanoscale, 2016, 8 (34), pp.15479-15485. ⟨10.1039/c6nr04289a⟩ Article dans une revue hal-02992571v1
Self-organized metal-semiconductor epitaxial graphene layer on off-axis 4H-SiC(0001) Debora Pierucci,Haikel Sediri,Mahdi Hajlaoui,Emilio Velez-Fort,Yannick J. Dappeet al. Nano Research, 2015, 8 (3), pp.1026-1037. ⟨10.1007/s12274-014-0584-y⟩ Article dans une revue cea-01366518v1
GaN nanowires for piezoelectric generators Noelle Gogneau,Pascal Chrétien,Elisabeth Galopin,Stephane Guilet,Laurent Traverset al. physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2014, 8 (5), pp.414-419. ⟨10.1002/pssr.201409105⟩ Article dans une revue istex hal-01093504v1
Impact of the GaN nanowire polarity on energy harvesting Noelle Gogneau,Pascal Chrétien,Elisabeth Galopin,Stephane Guilet,Laurent Traverset al. Applied Physics Letters, 2014, 104 (21), pp.213105. ⟨10.1063/1.4880101⟩ Article dans une revue hal-01096617v1
From nanographene to monolayer graphene on 6H-SiC(0001) substrate A. Ouerghi,M. Ridene,C. Mathieu,N. Gogneau,R. Belkhou Applied Physics Letters, 2013, 102 (25), ⟨10.1063/1.4812516⟩ Article dans une revue cea-01481015v1
Control of the degree of surface graphitization on 3C-SiC(100)/Si(100) N. Gogneau,A. Balan,M. Ridene,A. Shukla,A. Ouerghi Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (3-4), pp.217-220. ⟨10.1016/j.susc.2011.09.021⟩ Article dans une revue istex hal-01053508v1
Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers A. Ouerghi,M. Ridene,A. Balan,R. Belkhou,A. Barbieret al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.205429. ⟨10.1103/PhysRevB.83.205429⟩ Article dans une revue hal-00644391v1
Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window Richard Hostein,Adrien Michon,Gregoire Beaudoin,Noelle Gogneau,Gilles Patriacheet al. Applied Physics Letters, 2008, 93, pp.073106. ⟨10.1063/1.2965112⟩ Article dans une revue hal-00303555v1
Density of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates A. Michon,G. Patriarche,G. Beaudoin,Guillaume Saint-Girons,N. Gogneauet al. Applied Physics Letters, 2007, 91 (10), pp.102107. ⟨10.1063/1.2779101⟩ Article dans une revue hal-01939911v1

Communication dans un congrès (26)

The surface charge effects: a route to the enhancement of the piezoelectric conversion efficiency in GaN NWs - Invited Speaker Noëlle Gogneau,Pascal Chrétien,Amaury Chevillard,Tanbir Sodhi,Szu-Wei Chenet al. Nanogenerators and Piezotronics (NGPT2024), May 2024, Madison (US-WI), United States Communication dans un congrès hal-04994360v1
Surface charge effects: An advantage for enhancing the piezoelectric conversion efficiency in GaN NWs - Invited Talk Noëlle Gogneau,Pascal Chrétien,Amaury Chevillard,Tanbir Sodhi,Szu-Wei Chenet al. 2024 Spring Meeting of the European Materials Research Society (E-MRS), Apr 2024, Seattle (USA), Washington, United States Communication dans un congrès hal-04994306v1
How Can InGaN/GaN Heterostructures Be Advantageous for the Piezoelectric Conversion of GaN Nanowires and their Energy Harvesting Applications? Amaury Chevillard,Quang Chieu Bui,Pascal Chrétien,Nuño Amador-Méndez,Arup Kuntiet al. JNRSE 2023 - Journées Nationales sur la Récupération et le Stockage de l'Energie, Jun 2023, Paris, France Communication dans un congrès hal-05284589v1
Surface charge effects in GaN NWs: An advantage for enhancing the piezoelectric conversion efficiency Noëlle Gogneau,Pascal Chrétien,Amaury Chevillard,Tanbir Sodhi,Laurent Couraudet al. 14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan Communication dans un congrès hal-04994342v1
How can the surface charge effects be advantageous for enhancing the piezo-conversion efficiency in GaN NWs? Noëlle Gogneau,Pascal Chrétien,Amaury Chevillard,Tanbir Sodhi,Laurent Couraudet al. MRS Spring Meeting & Exhibit 2023, Apr 2023, San Francisco California, United States Communication dans un congrès hal-04994323v1
How Can InGaN/GaN Heterostructures Be Advantageous for the Piezoelectric Conversion of GaN Nanowires and their Applications? Amaury Chevillard,Quang Chieu Bui,Pascal Chrétien,Nuño Amador-Méndez,Arup Kuntiet al. OPERA - WG2 - Application-oriented material development, Sep 2023, Bucarest, Romania Communication dans un congrès hal-05284601v1
GaN nanowire-based piezoelectric devices for energy harvesting: Impact of the NW/polymer matrix composite Amaury Chevillard,Maria Tchernycheva,Noëlle Gogneau E-MRS Spring Meeting, May 2023, Strasbourg, France Communication dans un congrès hal-05284644v1
Electromechanical transducers based on GaN NWs: Influence of the nanometer scale on the properties - Invited Speaker Noëlle Gogneau ournées Nationales sur la Récupération et le Stockage de l'Energie, Jul 2022, Bordeaux, France Communication dans un congrès hal-04994385v1
High electromechanical conversion properties of III-Nitride nanowires for piezoelectric energy harvesting: Towards the development of batteryless wireless micro-devices - Invited Speaker Noëlle Gogneau,Pascal Chrétien,Martina Morassi,Tanbir Sodhi,Laurent Traverset al. 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022), Jul 2022, Jeju City, Jeju Island, South Korea Communication dans un congrès hal-04994374v1
Impact de la matrice polymère dans des dispositifs à base de nanofils de GaN pour des applications de récupération d'énergie Amaury Chevillard,Tanbir Sodhi,Elie Lefeuvre,Laurent Couraud,Xavier Lerouxet al. Journées Plénières GDR NAME 2022, Oct 2022, Lyon, France Communication dans un congrès hal-05284564v1
Electrical characterization of PA-MBE grown GaN nanowires via conductive probe AFM - Effect of load and generator resistances Tanbir Sodhi,Pascal Chrétien,Laurent Travers,Frédéric Houzé,Noëlle Gogneau Summer School of the GDR-PULSE network, Jul 2021, Porquerolles, France Communication dans un congrès hal-03844452v1
Apport de l'AFM à pointe conductrice pour la caractérisation des performances de piézo-génération de nanofils GaN Tanbir Sodhi,Pascal Chrétien,Nicolas Jamond,Noëlle Gogneau,Frédéric Houzé 22ème Forum des Microscopies à Sondes Locales, Mar 2019, Carry-le-Rouet, France. pp.167 Communication dans un congrès hal-02152858v1
Piezoelectric properties of axial InGaN/GaN Nanowires Noëlle Gogneau,Pascal Chrétien,Martina Morassi,Tanbir Sodhi,Laurent Traverset al. Journées Nationales des Nanofils semiconducteurs - J2N 2019, Nov 2019, Lyon, France Communication dans un congrès hal-02337971v1
Piezoelectric energy nanoharvester based on vertically-aligned GaN nanowires Junkang Wang,Lu Lu,Tanbir Sodhi,Pascal Chrétien,Frédéric Houzéet al. Nanowire Week 2019, Sep 2019, Pise, Italy Communication dans un congrès hal-02337899v1
Piezoelectric properties of GaN Nanowires: Effect of their conductivity Tanbir Sodhi,Pascal Chrétien,Martina Morassi,Laurent Travers,Lu Luet al. Journées Nationales des Nanofils semiconducteurs - J2N 2019, Nov 2019, Lyon, France Communication dans un congrès hal-02337953v1
GaN nanowires based piezoelectric generators Noelle Gogneau,Pascal Chrétien,Nicolas Jamond,L Lu,Nicoletta Jegenyeset al. 13th International Conference on Nitride Semiconductors - ICNS13, Jul 2019, Bellevue, United States Communication dans un congrès hal-02154041v1
Nanogenerators based on piezoelectric GaN nanowires grown by PA-MBE and MOCVD L. Lu,N. Jamond,J. Eymery,E. Lefeuvre,L. Manciniet al. 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626416⟩ Communication dans un congrès cea-02076724v1
Characterization of the piezoelectric-conversion properties of III-Nitride nanowires by conducting probe atomic force microscopy in intermittent contact mode Noëlle Gogneau,Pascal Chrétien,Martina Morassi,Nicoletta Jegenyes,Laetitia Leroyet al. 4th International Conference on Nanogenerators and Piezotronics (NGPT2018), May 2018, Seoul, South Korea Communication dans un congrès hal-01798287v1
Energy harvesting efficiency in GaN nanowires based nanogenerators: the critical influence of the Schottky nanocontact Nicolas Jamond,Pascal Chrétien,Lina Gatilova,Elizabeth Galopin,Laurent Traverset al. 4th International Conference on Nanogenerators and Piezotronics (NGPT2018), May 2018, Seoul, South Korea Communication dans un congrès hal-01798304v1
High Sensitivity Piezogenerator Based on GaN Nanowires L. Lu,N. Jamond,E. Lefeuvre,Pascal Chrétien,F. Houzéet al. Eurosensors 2017, Sep 2017, Paris, France. pp.587, ⟨10.3390/proceedings1040587⟩ Communication dans un congrès hal-01591362v1
Piezoelectric conversion with InGaN/GaN nanowire heterostructures Nicoletta Jegenyes,Martina Morassi,Pascal Chrétien,Laurent Travers,L Luet al. 12th International Conference on Nitride Semiconductors - ICNS 12, Jul 2017, Strasbourg, France Communication dans un congrès hal-01591417v1
Nitride Nanowires: From Rigid to Flexible Piezo-generators L. Lu,N. Jamond,Pascal Chrétien,F. Houzé,L. Traverset al. PowerMEMS 2016, Dec 2016, Paris, France. ⟨10.1088/1742-6596/773/1/012010⟩ Communication dans un congrès hal-01653358v1
GaN nanowires for piezoelectric energy harvesting : Towards wireless sensors Noelle Gogneau,Nicolas Jamond,Pascal Chrétien,Frédéric Houzé,Elisabeth Galopinet al. Energy Materials Nanotechnology (EMN) Spring Meeting 2016, Mar 2016, Taipei, Taiwan Communication dans un congrès hal-01315747v1
Piezo-Generator Integrating Vertical Array of GaN Nanowires: A new alternative energy source for nomad electronics Noëlle Gogneau,Nicolas Jamond,Laurent Travers,Jean-Christophe Harmand,Frank Glaset al. WTE 2016, Oct 2016, Paris-Saclay, France Communication dans un congrès hal-01631168v1
GaN nanowires based piezogenerator - Investigation of the GaN nanowires potentiality for the development of piezogenerators Nicolas Jamond,Laurent Travers,Franck Glas,Noelle Gogneau,Pascal Chrétienet al. Cinquièmes Journées Nationales sur la Récupération et le Stockage d'Energie , May 2015, Orsay, France. pp.21-22 Communication dans un congrès hal-01258276v1
Piezoelectric Potential of GaN Nanowires: Towards Efficient Output Piezo-generators N. Jamond,Pascal Chrétien,E. Galopin,Laurent Travers,J.C. Harmandet al. Atelier Nucléation Croissance et Surfaces Hétérogènes du GDR PULSE (Processus ULtimes en épitaxie de SEmiconducteurs), Apr 2014, Valbonne, France Communication dans un congrès hal-01099228v1

Poster de conférence (6)

GaN nanowire-based piezoelectric devices for energy harvesting: Impact of the NW/polymer matrix composite Amaury Chevillard,Maria Tchernycheva,Noëlle Gogneau 3rd MOMENTOM International Congress Energy At The Crossroads: Accelerating Innovation In The Age of Disruption, Mar 2023, Palaiseau, France Poster de conférence hal-05284634v1
Surface charges effects in GaN NWs: influence on the electromechanical conversion properties Tanbir Sodhi,Pascal Chrétien,Laurent Couraud,J.-C. Harmand,François Henri Julienet al. International Workshop on Nitride Semiconductors, Oct 2022, Berlin (Germany), Germany Poster de conférence hal-04990340v1
Impact of the polymer matrix in GaN nanowire-based devices for energy harvesting and force sensor applications Amaury Chevillard,Maria Tchernycheva,Noëlle Gogneau International Symposium on the Physics of Semiconductors and Applications, Jul 2022, Jeju City, Jeju Island, South Korea Poster de conférence hal-05284624v1
Formation de matière sur des surfaces imagées par AFM en mode intermittent : un artefact inattendu Aymeric Vecchiola,Pascal Chrétien,Noelle Gogneau,Karim Bouzehouane,Olivier Schneeganset al. 19e Forum des Microscopies à Sonde Locale, Mar 2016, Sochaux-Montbéliard, France. Actes du 19e Forum des Microscopies à Sonde Locale Poster de conférence hal-01317764v1
GaN nanowires based piezogenerator Nicolas Jamond,Pascal Chrétien,Frédéric Houzé,Laurent Travers,Franck Glaset al. Nanowires 2015, Oct 2015, Barcelone, Spain. pp.110, Nanowires 2015 - Book of Abstracts - Poster Sessions Poster de conférence hal-01258198v1
Effect of the AlN interfacial layer on the piezoelectric properties of GaN nanowires Nicolas Jamond,Pascal Chrétien,L Largeau,Olivia Mauguin,Elisabeth Galopinet al. Réunion plénière des GDR PULSE (Processus ULtimes en épitaxie de SEmiconducteurs) et NNS (NanoFils, Nanotubes, Semiconducteurs), Oct 2014, Toulouse, France Poster de conférence hal-01338879v1

Proceedings/Recueil des communications (1)

Electron beam induced current investigation of Ga(In)N nanowires (Conference Presentation) Omar Saket,Fabien Bayle,François Julien,Martina Morassi,Nuno Amadoret al. Gallium Nitride Materials and Devices XIV, Feb 2019, San Francisco, United States. SPIE, pp.29, 2019, ⟨10.1117/12.2509370⟩ Proceedings/Recueil des communications hal-02385635v1