Olivier BRIOT

Publications

Article dans une revue (103)

Effect of the growth temperature on the crystal quality and optical properties in ZnS Hassan Amadou Arifa,Olivier Briot,Sandrine Juillaguet,Herve Peyre,Bernard Fraisseet al. Journal of Applied Physics, 2025, 138 (11), ⟨10.1063/5.0271678⟩ Article dans une revue hal-05295706v1
Structural and Optical Analysis of Chemically Deposited ZnS Thin Films for Optoelectronic Devices Applications A. Arifa Hassan,Aboubacar Almoustapha,Halidou Ibrahim,Olivier Briot,Sandrine Juillaguetet al. Asian Journal of Physical and Chemical Sciences, 2025, 13 (2), pp.56-64. ⟨10.9734/ajopacs/2025/v13i2247⟩ Article dans une revue hal-05055579v1
Synthesis and characterization of aluminum doped zinc oxide nanoparticles via a novel and low cost aqueous chemical process Abdoul-Razak Moussa Tankari,K. Medjnoun,M. Nouiri,Olivier Briot,S. Juillaguetet al. Materials Letters, 2023, 353, pp.135230. ⟨10.1016/j.matlet.2023.135230⟩ Article dans une revue hal-04313143v1
Association of Early Norepinephrine Administration With 24-Hour Mortality Among Patients With Blunt Trauma and Hemorrhagic Shock Tobias Gauss,Justin Richards,Costanza Tortù,François-Xavier Ageron,Sophie Hamadaet al. JAMA Network Open, 2022, 5 (10), pp.e2234258. ⟨10.1001/jamanetworkopen.2022.34258⟩ Article dans une revue hal-03807657v1
Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction C. Iatosti,Matthieu Moret,Antoine Tiberj,Olivier Briot Solar Energy Materials and Solar Cells, 2021, 220, pp.110847. ⟨10.1016/j.solmat.2020.110847⟩ Article dans une revue hal-03175976v1
InSe as a case between 3D and 2D layered crystals for excitons T. Shubina,Wilfried Desrat,Matthieu Moret,Antoine Tiberj,Olivier Briotet al. Nature Communications, 2019, 10, pp.3479. ⟨10.1038/s41467-019-11487-0⟩ Article dans une revue hal-02275857v1
Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells Olivier Briot,Matthieu Moret,Camille Barbier,A. Tiberj,H. Peyreet al. Solar Energy Materials and Solar Cells, 2018, 174, pp.418 - 422. ⟨10.1016/j.solmat.2017.09.019⟩ Article dans une revue hal-01596720v1
Properties of MAPbI3 perovskite layers grown with HCl additions Matthieu Moret,Antoine Tiberj,Wilfried Desrat,Olivier Briot Superlattices and Microstructures, 2018, 120, pp.136. ⟨10.1016/j.spmi.2018.05.033⟩ Article dans une revue hal-01802768v1
Superconducting Ga/GaSe layers grown by van der Waals epitaxy Wilfried Desrat,Matthieu Moret,Olivier Briot,Thi Huong Ngo,Benjamin Piotet al. Materials Research Express, 2018, 5 (4), pp.045901. ⟨10.1088/2053-1591/aab8c5⟩ Article dans une revue hal-01784269v1
Study of $Cu_{2}O{\backslash}ZnO$ nanowires heterojunction designed by combining electrodeposition and atomic layer deposition Houssin Makhlouf,Matthieu Weber,Olfa Messaoudi,Sophie Tingry,Matthieu Moretet al. Applied Surface Science, 2017, 426, pp.301 - 306. ⟨10.1016/j.apsusc.2017.07.130⟩ Article dans une revue hal-01596715v1
High Efficiency Solar Cell Based on Full PVD Processed Cu(In,Ga)Se2/CdIn2S4 Heterojunction Nicolas Barreau,Agathe Frelon,Thomas Lepetit,Eric Gautron,Nicolas Gautieret al. Solar RRL, 2017, ⟨10.1002/solr.201700140⟩ Article dans une revue hal-01616034v1
Study and optimization of Al-doped ZnO thin films deposited on PEN substrates by RF-magnetron sputtering from nanopowders targets Semmari Hamza,Kamal Djessas,N. Brihi,Olivier Briot,Matthieu Moretet al. Journal of Materials Science: Materials in Electronics, 2016, 27 (2), pp.1730-1737. ⟨10.1007/s10854-015-3947-6⟩ Article dans une revue hal-01280701v1
Characteristics of nanostructured Zn1-xVxO thin films with high vanadium content elaborated by rf-magnetron sputtering K. Medjnoun,Kamal Djessas,M. S. Belkaid,S. E. Grillo,A. Solhyet al. Superlattices and Microstructures, 2015, 82, pp.384-398. ⟨10.1016/j.spmi.2015.02.019⟩ Article dans une revue istex hal-01134622v1
Effect of Sprayed Solution Volume on Physical Properties of Titanium Dioxide Thin Films W. Naffouti,T. Ben Nasr,Olivier Briot,N. Kamoun-Turki Journal of Electronic Materials, 2015, 44 (10), pp.3661-3669. ⟨10.1007/s11664-015-3878-2⟩ Article dans une revue hal-01201707v1
Growth, structure and optoelectronic characterizations of high quality Cu2ZnSnS4 thin films obtained by close spaced vapor transport Alphousseyni Sagna,Kamal Djessas,C. Sene,Mohamed Belaqziz,H. Chehouaniet al. Superlattices and Microstructures, 2015, 85, pp.918-924. ⟨10.1016/j.spmi.2015.06.019⟩ Article dans une revue istex hal-01169695v1
Phonon signature of the high-pressure rocksalt phase of InN Karel Kunc,Alain Polian,François Demangeot,Olivier Briot physica status solidi (b), 2015, 252 (9), pp.2104-2110. ⟨10.1002/pssb.201552126⟩ Article dans une revue istex hal-01158625v1
Atomic Layer Deposition of zinc oxide for solar cell applications Matthieu Moret,A. Abou Chaaya,Mikhael Bechelany,Philippe Miele,Yoann Robinet al. Superlattices and Microstructures, 2014, 75, pp.477-484. ⟨10.1016/j.spmi.2014.07.050⟩ Article dans une revue istex hal-01064707v1
Influence of the growth rate on the morphology of electrodeposited zinc oxide Yoann Robin,Matthieu Moret,Sandra Ruffenach,Roger Aulombard,Olivier Briot Superlattices and Microstructures, 2014, 73, pp.281. ⟨10.1016/j.spmi.2014.05.032⟩ Article dans une revue istex hal-01009319v1
Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities B. de Vries,U. Wahl,Sandra Ruffenach,Olivier Briot,A. Vantomme Applied Physics Letters, 2013, 103 (17), pp.172108. ⟨10.1063/1.4826705⟩ Article dans une revue hal-00914581v1
Investigation of indium nitride for micro-nanotechnology Anisha Gokarna,Jean-Francois Lampin,Dominique Vignaud,El Hadj Dogheche,Didier Decosteret al. International Journal of Nanotechnology, 2012, 9 (10-12), pp.900-906. ⟨10.1504/IJNT.2012.049454⟩ Article dans une revue hal-00787438v1
Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization Sergey V. Ovsyannikov,Vladimir V. Shchennikov,Alexander E. Karkin,Alain Polian,Olivier Briotet al. Applied Physics Letters, 2010, 97, pp.032105. ⟨10.1063/1.3466913⟩ Article dans une revue hal-00516955v1
Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase D. Gonzalez,J. G. Lozano,M. Herrera,F. M. Morales,Sandra Ruffenachet al. Nanotechnology, 2010, 21, pp.185706. ⟨10.1088/0957-4484/21/18/185706⟩ Article dans une revue hal-00539809v1
Phages recognizing the Indium Nitride semiconductor surface via their peptides. Elias Estephan,Marie-Belle Saab,Marta Martin,Christian Larroque,Frédéric Cuisinieret al. Journal of Peptide Science, 2010, DOI 10.1002/psc.1315. ⟨10.1002/psc.1315⟩ Article dans une revue istex hal-00526584v1
Structural changes during the natural aging process of InN quantum dots David Gonzalez,J.G. Lozano,M. Herrera,N.D. Browning,Sandra Ruffenachet al. Journal of Applied Physics, 2009, 105, pp.013527. ⟨10.1063/1.3010309⟩ Article dans une revue hal-00390304v1
Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy Sandra Ruffenach,Matthieu Moret,Olivier Briot,Bernard Gil Applied Physics Letters, 2009, 95, pp.042102. ⟨10.1063/1.3189212⟩ Article dans une revue hal-00539828v1
Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties Matthieu Moret,Sandra Ruffenach,Olivier Briot,B. Gil European Physical Journal: Applied Physics, 2009, 45 (2), pp.20305 Article dans une revue hal-00390126v1
Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties M. Moret,S. Ruffenach,O. Briot,B. Gil European Physical Journal: Applied Physics, 2009, 45 (2), pp.1. ⟨10.1051/epjap/2009007⟩ Article dans une revue hal-00480143v1
The epitaxial growth of indium nitride using berlinite (AlPO4) and other piezoelectric crystals of the quartz family as substrates Matthieu Moret,Sandra Ruffenach,Olivier Briot,Bernard Gil,M. Pauthe Applied Physics Letters, 2009, 95, pp.041910. ⟨10.1063/1.3193655⟩ Article dans une revue hal-00540227v1
The Reduction of Elastic Energy Density in InN Growth on (hkl)-Oriented Planes Olivier Briot,Bernard Gil,Pierre Bigenwald Japanese Journal of Applied Physics, 2009, 48, pp.051002. ⟨10.1143/JJAP.48.051002⟩ Article dans une revue hal-00390298v1
The determination of the bulk residual doping in indium nitride films using photoluminescence Olivier Briot,Matthieu Moret,Sandra Ruffenach,Bernard Gil Applied Physics Letters, 2009, 95, pp.031910. ⟨10.1063/1.3187914⟩ Article dans une revue hal-00540269v1
Polarization fields in wurtzite strained layers grown on (hkl) planes Bernard Gil,Pierre Bigenwald,Olivier Briot Superlattices and Microstructures, 2008, 44 (3), pp.291-301. ⟨10.1016/j.spmi.2008.06.003⟩ Article dans une revue hal-00807034v1
The effect of growth temperature on the luminescence and structural properties of GaN : Tm films grown by gas-source MBE I. S. Roqan,E. Nogales,K. P. O'Donnell,C. Trager-Cowan,R. W. Martinet al. Journal of Crystal Growth, 2008, 310, pp.4069-4072. ⟨10.1016/j.jcrysgro.2008.05.037⟩ Article dans une revue istex hal-00540241v1
Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots J. G. Lozano,A. M. Sanchez,R. Garcia,D. Gonzalez,M. Herreraet al. Applied Physics Letters, 2007, 91, pp.071915. ⟨10.1063/1.2770776⟩ Article dans une revue hal-00542123v1
Control of InN quantum dot density using rare gases in metal organic vapor phase epitaxy Sandra Ruffenach,Olivier Briot,Matthieu Moret,Bernard Gil Applied Physics Letters, 2007, 90, pp.153102. ⟨10.1063/1.2721124⟩ Article dans une revue hal-00542122v1
An evaluation of the growth of nitrides on semipolar substrates using two indicators Bernard Gil,Pierre Bigenwald,Olivier Briot physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2007, 1 (6), pp.268-270. ⟨10.1002/pssr.200701208⟩ Article dans une revue istex hal-00390129v1
Initial growth stages of MOVPE InN studied by AFM and specular reflectivity A. van Der Lee,F. Salah,B. Harzallah,S. Ruffenach,O. Briot Physica Status Solidi C: Current Topics in Solid State Physics, 2007, 4, pp.150-153. ⟨10.1002/pssc.200673536⟩ Article dans une revue istex hal-00128282v1
Strain relief analysis of InN quantum dots grown on GaN Juan G. Lozano,Ana M. Sanchez,Rafael Garcia,Sandra Ruffenach,Olivier Briotet al. Nanoscale Research Letters, 2007, 2 (9), pp.442-446. ⟨10.1007/s11671-007-9080-6⟩ Article dans une revue hal-00390128v1
Strain mapping at the atomic scale in highly mismatched heterointerfaces Ana Maria Sanchez,Juan Gabriel Lozano,Rafael Garcia,Miriam Herrera,Sandra Ruffenachet al. Advanced Functional Materials, 2007, 17, pp.2588-2593. ⟨10.1002/adfm.200600813⟩ Article dans une revue istex hal-00540273v1
Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing E. Nogales,Rw Martin,Kp O'Donnell,K. Lorenz,E. Alveset al. Applied Physics Letters, 2006, 88, pp.031902. ⟨10.1063/1.2162797⟩ Article dans une revue hal-00540370v1
Misfit relaxation of InN quantum dots: Effect of the GaN capping layer Jg Lozano,Am Sanchez,R. Garcia,D. Gonzalez,Olivier Briotet al. Applied Physics Letters, 2006, 88, pp.151913. ⟨10.1063/1.2195642⟩ Article dans une revue hal-00540396v1
Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy A. Pelli,K. Saarinen,F. Tuomisto,Sandra Ruffenach,Olivier Briot Applied Physics Letters, 2006, 89, pp.011911. ⟨10.1063/1.2219335⟩ Article dans une revue hal-00540405v1
Raman scattering study of wurtzite and rocksalt InN under high pressure. C. Pinquier,François Demangeot,J. Frandon,J.C. Chervin,A. Polianet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.115211. ⟨10.1103/PhysRevB.73.115211⟩ Article dans une revue hal-00022132v1
Selectively excited photoluminescence from Eu-implanted GaN K. Wang,Rw Martin,Kp O'Donnell,V. Katchkanov,E. Nogaleset al. Applied Physics Letters, 2005, 87 (11), pp.112107. ⟨10.1063/1.2045551⟩ Article dans une revue hal-00390133v1
Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms François Demangeot,C. Pinquier,J. Frandon,M. Gaio,Olivier Briotet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.104305. ⟨10.1103/PhysRevB.71.104305⟩ Article dans une revue hal-00540408v1
Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy Jg Lozano,Am Sanchez,R. Garcia,D. Gonzalez,D. Araujoet al. Applied Physics Letters, 2005, 87 (26), pp.263104. ⟨10.1063/1.2152110⟩ Article dans une revue hal-00390132v1
Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition R. Intartaglia,B. Maleyre,Sandra Ruffenach,Olivier Briot,T. Taliercioet al. Applied Physics Letters, 2005, 86, pp.142104. ⟨10.1063/1.1897428⟩ Article dans une revue hal-00540409v1
Terahertz investigation of high quality indium nitride epitaxial layers Ym Meziani,Benedicte Maleyre,Ml Sadowski,Sandra Ruffenach,Olivier Briotet al. Physica Status Solidi A (applications and materials science), 2005, 202, pp.590-592. ⟨10.1002/pssa.200460434⟩ Article dans une revue istex hal-00540412v1
Giant second-harmonic generation in a one-dimensional GaN photonic crystal Jeremi Torres,Dominique Coquillat,Rene Legros,Jean-Paul Lascaray,Frederic Teppeet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69, pp.085105. ⟨10.1103/PhysRevB.69.085105⟩ Article dans une revue hal-00540436v1
High-temperature annealing and optical activation of Eu-implanted GaN K. Lorenz,U. Wahl,E. Alves,S. Dalmasso,Rw Martinet al. Applied Physics Letters, 2004, 85, pp.2712-2714. ⟨10.1063/1.1801686⟩ Article dans une revue hal-00539948v1
Raman scattering in hexagonal InN under high pressure C. Pinquier,François Demangeot,J. Frandon,Jw Pomeroy,M. Kuballet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.113202. ⟨10.1103/PhysRevB.70.113202⟩ Article dans une revue hal-00539950v1
Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOVPE B. Maleyre,S. Ruffenach,O. Briot,A. van Der Lee Superlattices and Microstructures, 2004, 36, pp.527-535. ⟨10.1016/j.spmi.2004.09.052⟩ Article dans une revue istex hal-00164212v1
Giant second-harmonic generation in a one-dimensional GaN photonic crystal J. Torres,D. Coquillat,R. Legros,J.P Lascaray,F. Teppeet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, pp.69 085105 1-8 (2004) Article dans une revue hal-00385108v1
Indium nitride quantum dots grown by metalorganic vapor phase epitaxy Olivier Briot,B. Maleyre,Sandra Ruffenach Applied Physics Letters, 2003, 83, pp.2919-2921. ⟨10.1063/1.1613044⟩ Article dans une revue hal-00540467v1
Raman scattering in large single indium nitride dots: Correlation between morphology and strain François Demangeot,J. Frandon,C. Pinquier,M. Caumont,Olivier Briotet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.245308. ⟨10.1103/PhysRevB.68.245308⟩ Article dans une revue hal-00540458v1
Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal Jeremi Torres,Dominique Coquillat,Rene Legros,Jean-Paul Lascaray,Sandra Ruffenachet al. physica status solidi (b), 2003, 240, pp.455-458. ⟨10.1002/pssb.200303309⟩ Article dans une revue istex hal-00540469v1
Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering M. Kuball,François Demangeot,J. Frandon,Ma Renucci,H. Sandset al. Applied Physics Letters, 1999, 74, pp.549-551 Article dans une revue hal-00545869v1
Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution A. Ribayrol,Dominique Coquillat,Rm de La Rue,Sk Murad,Cdw Wilkinsonet al. Materials Science and Engineering: B, 1999, 59, pp.335-339 Article dans une revue hal-00546198v1
Inhomogeneous electric field-induced Raman scattering at ZnSe/GaAs interfaces O. Pages,H. Erguig,Jp Laurenti,M. Certier,D. Bormannet al. Journal of Applied Physics, 1999, 85, pp.2371-2376 Article dans une revue hal-00546199v1
Influence of defect states on the nonlinear optical properties of GaN H. Haag,B. Honerlage,Olivier Briot,Roger Aulombard Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 60, pp.11624-11630 Article dans une revue hal-00546196v1
Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy K. Saarinen,P. Seppala,J. Oila,P. Hautojarvi,C. Corbelet al. Applied Physics Letters, 1998, 73, pp.3253-3255 Article dans une revue hal-00546183v1
Thermal stability of GaN investigated by Raman scattering M. Kuball,François Demangeot,J. Frandon,Ma Renucci,J. Massieset al. Applied Physics Letters, 1998, 73, pp.960-962 Article dans une revue hal-00546184v1
Realization and optical characterization of etched mirror facets in GaN cavities F. Binet,Jy Duboz,N. Laurent,C. Bonnat,P. Collotet al. Applied Physics Letters, 1998, 72, pp.960-962 Article dans une revue hal-00546185v1
Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions François Demangeot,Jesse Groenen,J. Frandon,Ma Renucci,Olivier Briotet al. Applied Physics Letters, 1998, 72, pp.2674-2676 Article dans une revue hal-00545870v1
Optical nonlinearities of gallium nitride H. Haag,P. Gilliot,B. Honerlage,Olivier Briot,Roger Aulombard Annales de Physique, 1998, 23, pp.161-162 Article dans une revue hal-00546182v1
Interplay of electrons and phonons in heavily doped GaN epilayers François Demangeot,J. Frandon,Ma Renucci,C. Meny,Olivier Briotet al. Journal of Applied Physics, 1997, 82, pp.1305-1309 Article dans une revue hal-00546203v1
Properties of a photovoltaic detector based on an n-type GaN Schottky barrier F. Binet,Jy Duboz,N. Laurent,E. Rosencher,Olivier Briotet al. Journal of Applied Physics, 1997, 81, pp.6449-6454 Article dans une revue hal-00546208v1
Anomalous behaviour of optical phonon modes in ZnSe epitaxial layers O. Pages,Ma Renucci,Olivier Briot,Roger Aulombard Journal of Raman Spectroscopy, 1997, 28, pp.551-554 Article dans une revue hal-00546201v1
Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism technique M. Julier,J. Campo,Dominique Coquillat,Jean-Paul Lascaray,Denis Scalbertet al. Materials Science and Engineering: B, 1997, 50, pp.126-129 Article dans une revue hal-00546190v1
Comparative study of hexagonal and cubic GaN growth by RF-MBE G. Feuillet,F. Widmann,B. Daudin,J. Schuler,M. Arleryet al. Materials Science and Engineering: B, 1997, 50, pp.233-237 Article dans une revue hal-00546192v1
Diffusion length of photoexcited carriers in GaN Jy Duboz,F. Binet,D. Dolfi,N. Laurent,F. Scholzet al. Materials Science and Engineering: B, 1997, 50, pp.289-295 Article dans une revue hal-00546194v1
Photostimulated emission of GaN layers and devices Kp O'Donnell,M. Umlauff,M. Kraushaar,H. Kalt,Olivier Briot Materials Science and Engineering: B, 1997, 50, pp.264-267 Article dans une revue hal-00546193v1
Optical pumping in nitride cavities with etched mirror facets F. Binet,Jy Duboz,N. Laurent,C. Bonnat,P. Collotet al. Materials Science and Engineering: B, 1997, 50, pp.183-187 Article dans une revue hal-00546191v1
Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire Jl Rouviere,M. Arlery,B. Daudin,G. Feuillet,Olivier Briot Materials Science and Engineering: B, 1997, 50, pp.61-71 Article dans une revue hal-00546189v1
Zeeman splittings of excitonic transitions at the Gamma point in wurtzite GaN: A magnetoreflectance investigation J. Campo,M. Julier,Dominique Coquillat,Jean-Paul Lascaray,Denis Scalbertet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 56, pp.R7108-R7111 Article dans une revue hal-00546200v1
Comparison of luminescence and physical morphologies of GaN epilayers C. Trager-Cowan,Pg Middleton,Kp O'Donnell,Sandra Ruffenach,Olivier Briot Materials Science and Engineering: B, 1997, 50, pp.161-164 Article dans une revue hal-00545874v1
Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN Olivier Briot,Sandra Ruffenach,Roger Aulombard Applied Physics Letters, 1997, 71, pp.1990-1992 Article dans une revue hal-00545876v1
The exciton-polariton effect on the photoluminescence of GaN on sapphire Bernard Gil,Sandra Ruffenach,Olivier Briot Solid State Communications, 1997, 104, pp.267-270 Article dans une revue hal-00545875v1
Internal structure and oscillator strengths of excitons in strained alpha-GaN Bernard Gil,Olivier Briot Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 55, pp.2530-2534 Article dans une revue hal-00546211v1
MOVPE growth and characterization of AlxGa1-xN Sandra Ruffenach,Olivier Briot,Jl Rouviere,Bernard Gil,Roger Aulombard Materials Science and Engineering: B, 1997, 50, pp.219-222 Article dans une revue hal-00546775v1
Coupled LO-plasmon modes in semi-insulating GaAs of ZnSe/GaAs heterojunctions O. Pagès,Ma Renucci,Olivier Briot,Roger Aulombard Journal of Applied Physics, 1996, 80 (2), pp.1128 Article dans une revue hal-00547055v1
Raman determination of phonon deformation potentials in alpha-GaN François Demangeot,J. Frandon,Ma Renucci,Olivier Briot,Bernard Gilet al. Solid State Communications, 1996, 100 (4), pp.207 Article dans une revue hal-00547049v1
Optical spectroscopy in (Zn,Cd)Se-ZnSe graded-index separate-confinement heterostructures L. Aigouy,V. Mathet,F. Liaci,Bernard Gil,Olivier Briotet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 53 (8), pp.4708 Article dans une revue hal-00547079v1
Optical properties of GaN epilayers on sapphire M. Tchounkeu,Olivier Briot,Bernard Gil,J.P. Alexis,Roger Aulombard Journal of Applied Physics, 1996, 80 (9), pp.5352 Article dans une revue hal-00547002v1
Gain of optically excited ZnCdSe-ZnSe quantum wells R. Tomasiunas,Y. Pelant,D. Guennani,J.B. Grun,R. Levyet al. Solid State Communications, 1996, 97, pp.187 Article dans une revue hal-00547107v1
Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry Bernard Gil,Olivier Briot,Roger Aulombard Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 52 (24), pp.17028 Article dans une revue hal-00547098v1
HIGH-FIELD DIRECT-CURRENT CONDUCTION IN EPITAXIAL ZNS FILMS E. Bringuier,Olivier Briot Applied Physics Letters, 1995, 67 (23), pp.3486 Article dans une revue hal-00547264v1
OPTICAL-PROPERTIES AND RECOMBINATION PROCESSES IN (ZN,CD)SE GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURES L. Aigouy,J.P. Alexis,Olivier Briot,Thierry Cloitre,Bernard Gilet al. Superlattices and Microstructures, 1995, 17 (4), pp.381 Article dans une revue hal-00547265v1
CRITICAL LAYER THICKNESS IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INGAAS/GAAS STRAINED QUANTUM-WELLS Xb Zhang,Olivier Briot,Bernard Gil,Roger Aulombard Journal of Applied Physics, 1995, 78 (9), pp.5490 Article dans une revue hal-00547266v1
RAMAN-STUDY OF BAND BENDING AT ZNSE/GAAS INTERFACES O. Pagès,Ma Renucci,Olivier Briot,Roger Aulombard Journal of Applied Physics, 1995, 77 (3), pp.1241 Article dans une revue hal-00547270v1
Excitons and biexcitons in MOVPE-grown ZnS epitaxial layers D. Guennani,J. Valenta,A. Manar,J.B Grun,Thierry Cloitreet al. Solid State Communications, 1995, 96 (9), pp.637. ⟨10.1016/0038-1098(95)00539-0⟩ Article dans une revue istex hal-00547267v1
BAND OFFSETS AND EXCITON BINDING-ENERGIES IN ZN1-XCDXSE-ZNSE QUANTUM-WELLS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY F. Liaci,Pierre Bigenwald,Olivier Briot,Bernard Gil,N. Briotet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 51 (7), pp.4699 Article dans une revue hal-00547269v1
MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF ZNSE/ZNS STRAINED-LAYER SUPERLATTICES L. Aigouy,N. Briot,D. Bouchara,Thierry Cloitre,M. Diblasioet al. Superlattices and Microstructures, 1994, 16 (1), pp.71 Article dans une revue hal-00547271v1
Optical characterization of pure ZnSe epilayers grown by metal organic vapour-phase epitaxy A. Chergui,J. Valenta,J.L. Loison,M. Robino,I. Pelantet al. Semiconductor Science and Technology, 1994, 9 (11), pp.2073. ⟨10.1088/0268-1242/9/11/007⟩ Article dans une revue istex hal-00547275v1
OPTICAL-PROPERTIES OF WIDE-GAP II-VI ZNTE EPILAYERS M. Averous,A. Abounadi,Roger Aulombard,D. Bouchara,N. Briotet al. physica status solidi (b), 1994, 181, pp.427 Article dans une revue hal-00547284v1
REFLECTIVITY AND PHOTOLUMINESCENCE MEASUREMENTS IN ZNS EPILAYERS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION A. Abounadi,M. Diblasio,D. Bouchara,J. Calas,M. Averouset al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1994, 50 (16), pp.11677 Article dans une revue hal-00547273v1
REFLECTIVITY ANALYSIS OF ZNS LAYERS GROWN ON GAAS AND SI SUBSTRATES BY METAL-ORGANIC VAPOR-PHASE EPITAXY Olivier Briot,N. Briot,A. Abounadi,Bernard Gil,Thierry Cloitreet al. Semiconductor Science & Technology, 1994, 9 (2), pp.207 Article dans une revue hal-00547286v1
ELECTRONIC STATES AND BINDING-ENERGIES IN ZNS-ZNSE SUPERLATTICES Bernard Gil,Thierry Cloitre,M. Diblasio,Pierre Bigenwald,L. Aigouyet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1994, 50 (24), pp.18231 Article dans une revue hal-00547272v1
Optical properties of ZnSe-ZnTe type II superlattices T. Cloitre,N. Briot,O. Briot,P. Boring,B. Gilet al. Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-421-C5-424. ⟨10.1051/jp4:1993590⟩ Article dans une revue istex jpa-00251677v1
BIAXIAL-STRAIN EFFECT ON EXCITONIC TRANSITIONS E(0) AND E(0)+DELTA(0) IN THE TEMPERATURE-RANGE 4.5-200 K AND ZEEMAN SPLITTING IN ZNSE/GAAS EPILAYERS D. Coquillat,F. Hamdani,J.P Lascaray,Olivier Briot,N. Briotet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1993, 46 (16), pp.10489 Article dans une revue hal-00547294v1
LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF ZNTE USING TRIETHYLAMINE DIMETHYL ZINC ADDUCT Thierry Cloitre,N. Briot,Olivier Briot,Bernard Gil,Roger Aulombard Journal of Crystal Growth, 1993, 133 (2), pp.101 Article dans une revue hal-00547288v1
CONFINEMENT AND STRAIN EFFECTS ON PHONONS IN A ZNSE-ZNTE SUPERLATTICE J. Frandon,Ma Renucci,N. Briot,Olivier Briot,Roger Aulombard Superlattices and Microstructures, 1993, 14 (1), pp.71 Article dans une revue hal-00547276v1
METAL ORGANIC VAPOR-PHASE EPITAXY AND LUMINESCENCE STUDIES OF GAAS ZNSE DOUBLE HETEROSTRUCTURES Olivier Briot,N. Briot,Thierry Cloitre,Roger Aulombard,Bernard Gilet al. Semiconductor Science & Technology, 1991, 6 (7), pp.695 Article dans une revue hal-00547297v1
LOW-TEMPERATURE MOVPE GROWTH OF ZNSE LAYERS USING ALKYLS IN A DOUBLE ZONE REACTOR Olivier Briot,Robert Delmas,N. Tempier,R. Sauvezon,Roger Aulombard Journal of Crystal Growth, 1989, 98 (4), pp.857 Article dans une revue hal-00547301v1

Communication dans un congrès (88)

Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates Haitham Hrich,Matthieu Moret,Olivier Briot,Matthieu Paillet,Jean Manuel Decamset al. ECSCRM 2021, Oct 2021, Tours (FR), France. pp.59-63, ⟨10.4028/p-1ak21z⟩ Communication dans un congrès hal-03845325v1
Optical investigations and strain effect in AlGaN/GaN epitaxial layers M. Jayasakthi,Sandrine Juillaguet,Herve Peyre,Leszek Konczewicz,Matthieu Moretet al. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩ Communication dans un congrès hal-01935164v1
In-situ monitoring of CuInSe2 thin films growth by light scattering Yoann Robin,Matthieu Moret,Sandra Ruffenach,Roger Aulombard,Olivier Briot E-MRS 2014 Spring Meeting, Symposium A, Thin-Film Chalcogenide Photovoltaic Materials, Daniel Abou-Ras; Marika Edoff; Takashi Minemoto; David Mitzi; Alessandro Romeo, May 2014, Lille, France. pp.276, ⟨10.1016/j.tsf.2014.10.083⟩ Communication dans un congrès istex hal-01101052v1
X-ray diffraction study of A- plane non polar InN epilayer grown by MOCVD Matthieu Moret,Olivier Briot,Bernard Gil GALLIUM NITRIDE MATERIALS AND DEVICES X, conferenceOrganizer, 2015, San Francisco, United States. pp.936328, ⟨10.1117/12.2077513⟩ Communication dans un congrès hal-01134316v1
High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se-2 Matthieu Moret,Olivier Briot,Bernard Gil,Thomas Lepetit,Ludovic Arzelet al. PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 2015, San Francisco, California, United States. pp.93581A, ⟨10.1117/12.2076938⟩ Communication dans un congrès hal-01134308v1
Annealing effect of CdS thin films deposited by chemical bath deposition on different substrates Yoann Robin,Matthieu Moret,Sandra Ruffenach,Roger Aulombard,Olivier Briot Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, Jun 2013, Tampa, United States. pp.1173, ⟨10.1109/PVSC.2013.6744349⟩ Communication dans un congrès hal-01009387v1
(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum Sandra Ruffenach,Yoann Robin,Matthieu Moret,Roger Aulombard,Olivier Briot E-MRS Spring Meeting, May 2012, Strasbourg, France. pp.143-147, ⟨10.1016/j.tsf.2013.01.053⟩ Communication dans un congrès istex hal-00820323v1
Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN V. Darakchieva,K. Lorenz,M. -Y. Xie,E. Alves,W. J. Schaffet al. E-MRS ICAM IUMRS 2011 Spring Meeting – Symposium H, May 2011, Nice, France. pp.91-94, ⟨10.1002/pssa.201100175⟩ Communication dans un congrès istex hal-00698910v1
Free electron properties and hydrogen in InN grown by MOVPE V. Darakchieva,M. -Y. Xie,D. Rogalla,H. -W. Becker,K. Lorenzet al. ISGN3, Jul 2010, France. pp.1179-1182, ⟨10.1002/pssa.201001151⟩ Communication dans un congrès istex hal-00633877v1
MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate Matthieu Moret,Sandra Ruffenach,Olivier Briot,Bernard Gil ISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩ Communication dans un congrès istex hal-00633882v1
Managing gas purity in epitaxial growth M. Succi,S. Pirola,Sandra Ruffenach,Olivier Briot Italian Crystal Growth Conference (ICGC 2010), Nov 2010, Parme, Italy. pp.809-812, ⟨10.1002/crat.201000610⟩ Communication dans un congrès istex hal-00633875v1
Phages recognizing the Indium Nitride semiconductor surface via their peptides Elias Estephan,Marie-Belle Saab,Marta Martin-Fernandez,Christian Larroque,Frederic J. G. Cuisinieret al. E-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147 Communication dans un congrès hal-00633883v1
MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire Matthieu Moret,Sandra Ruffenach,Olivier Briot,Bernard Gil Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.24-28 Communication dans un congrès hal-00540220v1
Recent advances in the MOVPE growth of indium nitride Sandra Ruffenach,Matthieu Moret,Olivier Briot,Bernard Gil Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.9-18 Communication dans un congrès hal-00540219v1
Peptides recognizing the InN semiconductor surface Elias Estephan,Marie-Belle Saab,Christian Larroque,Frédéric Cuisinier,Olivier Briotet al. EMRS, Jun 2010, Strasbourg, France Communication dans un congrès hal-00526767v1
Natural oxidation of InN quantum dots: the role of cubic InN D. Gonzalez,Jg. Lozano,M. Herrera,M.D. Browning,Sandra Ruffenachet al. EMRS Spring Meeting 2009, Jun 2009, Strasbourg, France. pp.9 Communication dans un congrès hal-00546122v1
InN excitonic deformation potentials determined experimentally Bernard Gil,Olivier Briot,Matthieu Moret,Sandra Ruffenach,Christoph Giesenet al. 2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩ Communication dans un congrès istex hal-00390295v1
Investigation on low band gap nitride materials for micro- nanotechnology El Hadj Dogheche,A. Gokarna,Didier Decoster,S. Ruffenach,O. Briot Indo-French Workshop on Nanosciences and Nanotechnology, 2009, Delhi, India Communication dans un congrès hal-00575298v1
Alternative precursors for MOVPE growth of InN and GaN at low temperature Sandra Ruffenach,Matthieu Moret,Olivier Briot,Bernard Gil,Christoph Giesenet al. 2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩ Communication dans un congrès istex hal-00390309v1
MOVPE growth of InN buffer layers on sapphire Olivier Briot,Sandra Ruffenach,Matthieu Moret,Bernard Gil,Christoph Giesenet al. 2nd International Symposium on the gGrowth of III-Nitrides, Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2787, ⟨10.1016/j.jcrysgro.2009.01.008⟩ Communication dans un congrès istex hal-00390306v1
Growth of InN films and nanostructures by MOVPE Olivier Briot,Sandra Ruffenach,Matthieu Moret,Bernard Gil,Christoph Giesenet al. 2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2761, ⟨10.1016/j.jcrysgro.2009.01.037⟩ Communication dans un congrès istex hal-00390294v1
Optical, structural investigations and band-gap bowing parameter of GaInN alloys Matthieu Moret,Bernard Gil,Sandra Ruffenach,Olivier Briot,Christoph Giesenet al. 2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2795, ⟨10.1016/j.jcrysgro.2009.01.009⟩ Communication dans un congrès istex hal-00390296v1
Superconductivity of InN as an intrinsic property T. Inushima,Duncan Kennedy Maude,N. Kato,H. Lu,W.J. Schaffet al. 28th International Conference on the Physics of Semiconductors, Jul 2006, Austria. pp.137, ⟨10.1063/1.2729807⟩ Communication dans un congrès hal-00546032v1
Initial growth stages of MOVPE InN studied by AFM and specular reflectivity Arie van Der Lee,F. Salah,B. Harzallah,Sandra Ruffenach,Olivier Briot 6th International Symposium on Blue Laser and Light Emitting Diodes, May 2006, Montpellier, France. pp.150 Communication dans un congrès hal-00390130v1
Superconductivity of InN with a well defined Fermi surface T. Inushima,N. Kato,Duncan Kennedy Maude,Hai Lu,W. J. Schaffet al. 6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1679-1686 Communication dans un congrès hal-00540403v1
Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy J. G. Lozano,D. Gonzalez,A. M. Sanchez,D. Araujo,Sandra Ruffenachet al. 6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1687-1690 Communication dans un congrès hal-00546075v1
UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers D. Pastor,S. Hernandez,R. Cusco,L. Artus,R. W. Martinet al. Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS, May 2006, Nice (FRANCE), France. pp.440-444 Communication dans un congrès hal-00542125v1
Characterization of the blue emission of Tm/Er co-implanted GaN I. S. Roqan,C. Trager-Cowan,B. Hourahine,K. Lorenz,E. Nogaleset al. Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Nov 2005, Boston (MA), United States. pp.599-604 Communication dans un congrès hal-00546130v1
A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN E. Nogales,K. Lorenz,K. Wang,I.S. Roqan,Roland Martinet al. MRS Fall Meeting - GaN, AlN, InN and Related Materials Symposium, Nov 2005, Boston, United States. pp.625 Communication dans un congrès hal-00546139v1
Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation S. Hernandez,R. Cusco,L. Artus,E. Nogales,Rw Martinet al. Meeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.771-774 Communication dans un congrès hal-00540399v1
Optical properties of high-temperature annealed Eu-implanted GaN K. Wang,Rw Martin,E. Nogales,V. Katchkanov,Kp O'Donnellet al. Meeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.797-801 Communication dans un congrès hal-00540398v1
High temperature annealing of rare earth implanted GaN films: Structural and optical properties K. Lorenz,U. Wahl,E. Alves,E. Nogales,S. Dalmassoet al. Meeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.750-758 Communication dans un congrès hal-00540402v1
Optical investigations on si-doped InN films B. Maleyre,Olivier Briot,Sandra Ruffenach,Bernard Gil 7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1379-1383 Communication dans un congrès hal-00540416v1
Growth of InN quantum dots by MOVPE Sandra Ruffenach,Benedicte Maleyre,Olivier Briot,Bernard Gil 4th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4), Jun 2004, St Petersburg (RUSSIA), Russia. pp.826-832 Communication dans un congrès hal-00540424v1
Growth Studies and Nanoscale Strain Profiles of InN Quantum Dots Olivier Briot,Sandra Ruffenach,Bernard Gil MRS Fall Meeting, Symposium FF, Nov 2005, Boston, United States Communication dans un congrès hal-00390297v1
Growth and properties of Indium nitride thin films and InN nanostructures Olivier Briot,Sandra Ruffenach,Bernard Gil 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society, Oct 2005, Sydney (AUSTRALIA), Australia. pp.856-857 Communication dans un congrès hal-00390131v1
Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVD Benedicte Maleyre,Sandra Ruffenach,Olivier Briot,Bernard Gil,A. van Der Lee International Workshop on Nitrides Semiconductors (IWN 2004), Jul 2004, Pittsburgh (PA), United States. pp.2309-2315 Communication dans un congrès hal-00540427v1
UV photoreflectance for wide band gap nitride characterization C. Bru-Chevallier,S. Fanget,G. Guillot,Sandra Ruffenach,Olivier Briot Symposium on Optical and X-Ray Metrology for Advanced Device Materials Characterization, Jun 2003, Strasbourg (FRANCE), France. pp.75-78 Communication dans un congrès hal-00540433v1
Mutual quenching of Er3+ photolurninescence under two laser excitation in GaN : Er M. Wojdak,A. Braud,Jl Doualan,R. Moncorge,B. Pipeleerset al. Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.755-761 Communication dans un congrès hal-00540438v1
The value of the direct bandgap of InN: a re-examination Olivier Briot,Benedicte Maleyre,Sandra Ruffenach,Bernard Gil,C. Pinquieret al. 3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1425-1428 Communication dans un congrès hal-00540437v1
Growth and characterisation of Eu doped GaN thin films G. Halambalakis,N. Rousseau,Olivier Briot,Sandra Ruffenach,Roger Aulombardet al. Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.721-728 Communication dans un congrès hal-00540441v1
MOVPE growth of InN films and quantum dots W. Maleyre,Olivier Briot,Sandra Ruffenach 1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.15-21 Communication dans un congrès hal-00539952v1
Growth of InN layers by MOVPE using different substrates B. Maleyre,Sandra Ruffenach,Olivier Briot,Bernard Gil,A. van Der Lee Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.517-526 Communication dans un congrès hal-00540449v1
Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVD B. Maleyre,Sandra Ruffenach,Olivier Briot,A. van Der Lee Spring Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.527-535 Communication dans un congrès hal-00540446v1
Amorphisation of GaN during processing with rare earth ion beams K. Lorenz,U. Wahl,E. Alves,T. Wojtowicz,P. Ruteranaet al. Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.737-745 Communication dans un congrès hal-00540440v1
Strain-induced correlations between the phonon frequencies of indium nitride Olivier Briot,Bernard Gil,B. Maleyre,Sandra Ruffenach,C. Pinquieret al. 3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1420-1424 Communication dans un congrès hal-00539944v1
Absorption and Raman scattering processes in InN films and dots Olivier Briot,B. Maleyre,Sandra Ruffenach,Bernard Gil,C. Pinquieret al. 1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.22-28 Communication dans un congrès hal-00539955v1
Raman scattering in InN films and nanostructures C. Pinquier,François Demangeot,J. Frandon,Olivier Briot,B. Maleyreet al. Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.581-589 Communication dans un congrès hal-00540444v1
Equifrequency surfaces in GaN/sapphire photonic crystals D. Peyrade,J. Torres,D. Coquillat,R. Legros,J.P Lascarayet al. International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), Jul 2002, TOULOUSE (FRANCE), France. pp.423-425 Communication dans un congrès hal-00477213v1
Modeling of nitride semiconductor based double heterostructure tunnel diodes Matthieu Moret,Sandra Ruffenach,Olivier Briot,Roger Aulombard Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.227-232 Communication dans un congrès hal-00540478v1
High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications. Matthieu Moret,Sandra Ruffenach,Olivier Briot,Bernard Gil,Roger Aulombard Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.233-238 Communication dans un congrès hal-00540477v1
The microstructure of Er MBE doped GaN T. Wojtowicz,P. Ruterana,N. Rousseau,Olivier Briot,S. Dalmassoet al. Meeting of the European-Materials-Research-Society (EMRS), Jun 2003, STRASBOURG (FRANCE), France. pp.114-117 Communication dans un congrès hal-00540453v1
Er Doped GaN by gas source molecular beam epitaxy on GaN templates. N. Rousseau,Olivier Briot,V. Ribes,Roger Aulombard Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.239-244 Communication dans un congrès hal-00540471v1
Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications Olivier Briot,Benedicte Maleyre,Sandra Ruffenach,C. Pinquier,François Demangeotet al. 5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, NARA (JAPAN), Japan. pp.2851-2854 Communication dans un congrès hal-00539936v1
Chemical profiles in AlGaN/GaN quantum wells: a CTEM, HRTEM and EFTEM comparison Jean-Luc Rouviere,Pascale Bayle-Guillemaud,G. Radtke,S. Groh,Olivier Briot Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, Mar 2001, OXFORD (ENGLAND), United Kingdom. pp.17-20 Communication dans un congrès hal-00546179v1
Photonic crystal properties of GaN infilled artificial opals Dominique Coquillat,Rene Legros,Sylvie Etienne-Calas,J. Phalippou,Matthieu Moretet al. 25th International Conference on the Physics of Semiconductors (ICPS25), Sep 2000, OSAKA (JAPAN), Japan. pp.1741-1742 Communication dans un congrès hal-00546180v1
Photoluminescence characterisation of triangular lattices of holes and pillars etched in GaN epilayers Dominique Coquillat,A. Ribayrol,Rm de La Rue,Pascal Girard,Olivier Briotet al. 3rd International Conference on Nitride Semiconductors (ICNS 99), Jul 1999, MONTPELLIER (FRANCE), France. pp.669-673 Communication dans un congrès hal-00546181v1
Deep ultraviolet Raman scattering for the monitoring of high-temperature processing of AlGaN M. Kuball,François Demangeot,J. Frandon,Ma Renucci,Dn Batchelderet al. International Conference on Solid State Spectroscopy - (ICSSS), Sep 1999, SCHWABISCH-GMUND (GERMANY), Germany. pp.105-108 Communication dans un congrès hal-00546197v1
Modeling of the incorporation of aluminum in Ga1-xAlxM (M=As or N) alloys grown by MOCVD Sandra Ruffenach,Olivier Briot,Bernard Gil,Roger Aulombard 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM, Sweden. pp.1153-1156 Communication dans un congrès hal-00546769v1
Optical transitions and exciton binding energies in GaN grown along various crystallographic orientations Bernard Gil,Olivier Briot,Roger Aulombard,S. Nakamura 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1265-1270 Communication dans un congrès hal-00546186v1
Nanometre scale reactive ion etching of GaN epilayers Dominique Coquillat,Sk Murad,A. Ribayrol,Cjm Smith,Rm de La Rueet al. 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1403-1406 Communication dans un congrès hal-00546188v1
Excitonic quantum efficiency of GaN A. Goldner,L. Eckey,A. Hoffmann,Bernard Gil,Olivier Briot 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1283-1286 Communication dans un congrès hal-00546187v1
The exciton-polariton effect on the fluorescence properties of GaN on sapphire Bernard Gil,A. Hoffmann,Sandra Ruffenach,L. Eckey,Olivier Briotet al. 2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY, Japan. pp.639-643 Communication dans un congrès hal-00545873v1
Characterization of ALN buffer layers on (0001)-sapphire substrates Ym Le Vaillant,R. Bisaro,J. Olivier,O. Durand,Jy Dubozet al. 2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY (JAPAN), Japan. pp.282-286 Communication dans un congrès hal-00546761v1
Influence of the V/III molar ratio on the structural and electronic properties of MOVPE grown GaN Olivier Briot,Jp Alexis,Sébastien Sanchez,Bernard Gil,Roger Aulombard Topical Workshop on III-V Nitrides (TWN 95), Sep 1995, NAGOYA (JAPAN), Japan. pp.315-317 Communication dans un congrès hal-00546210v1
GaN layer growth in relation to buffer deposition temperature François Demangeot,Ma Renucci,J. Frandon,Olivier Briot European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.246-249 Communication dans un congrès hal-00546207v1
Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire Jl Rouviere,M. Arlery,R. Niebuhr,Kh Bachem,Olivier Briot European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.161-166 Communication dans un congrès hal-00546205v1
Optimization of the MOVPE growth of GaN on sapphire Olivier Briot,Jp Alexis,M. Tchounkeu,Roger Aulombard European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.147-153 Communication dans un congrès hal-00546204v1
Luminescence and absorption of GaN films under high excitation S. Petit,D. Guennani,P. Gilliot,C. Hirlimann,B. Honerlageet al. European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.196-200 Communication dans un congrès hal-00546206v1
MOVPE growth and optical properties of GaN deposited on c-plane sapphire Olivier Briot,Bernard Gil,M. Tchounkeu,Roger Aulombard,François Demangeotet al. 38th Electronic Materials Conference (EMC), Jun 1996, SANTA BARBARA (CA), United States. pp.294-300 Communication dans un congrès hal-00546209v1
Optical characterization of MOVPE-grown ZnS-ZnSe short period superlattices Thierry Cloitre,Pierre Bigenwald,Bernard Gil,Olivier Briot,N. Briotet al. 7th International Conference on II-VI Compounds and Devices, 1996, Edinburgh, United Kingdom. pp.506 Communication dans un congrès hal-00547069v1
MOVPE growth of zincblende magnesium sulphide Leszek Konczewicz,Pierre Bigenwald,Thierry Cloitre,M. Chibane,M. Ricouet al. 7th International Conference on II-VI Compounds and Devices, 1995, Edinburgh, United Kingdom. pp.117 Communication dans un congrès hal-00547062v1
Optical properties and thermal transport of carriers in (Zn,Cd)Se-ZnSe heterostructures L. Aigouy,Bernard Gil,Olivier Briot,Thierry Cloitre,N. Briotet al. Electronic Materials Conference, 1995, Charlottesville, United States. pp.183 Communication dans un congrès hal-00547089v1
Optimization and optical studies of ZnCdSe-ZnSe heterostructures grown by MOVPE Thierry Cloitre,L. Aigouy,Bernard Gil,Olivier Briot,N. Briotet al. 7th International Conference on II-VI Compounds and Devices, 1995, Edinburgh, United Kingdom. pp.438 Communication dans un congrès hal-00547065v1
Reflectance study of MOVPE grown GaN using triethylgallium and ammonia Olivier Briot,Bernard Gil,Sébastien Sanchez,Roger Aulombard International Conference on Silicon Carbide and Related Materials 1995 (ICSCRM-95), 1995, Kyoto, Japan. pp.891 Communication dans un congrès hal-00547056v1
OPTICAL-PROPERTIES, ELECTRONIC-STRUCTURE, AND EXCITON BINDING-ENERGIES IN SHORT-PERIOD ZNS-ZNSE SUPERLATTICES Thierry Cloitre,L. Aigouy,M. Diblasio,Bernard Gil,Pierre Bigenwaldet al. 36th Electronic Materials Conference (EMC), 1994, Boulder, CO, United States. pp.123 Communication dans un congrès hal-00547268v1
Exciton recombination mechanism and binding energies in MOCVD-grown Zn1-xCdxSe-ZnSe single quantum wells. F. Liaci,L. Aigouy,Pierre Bigenwald,Bernard Gil,N. Briotet al. IV International Conference on Optics of Excitons in Confined Systems, 1995, Cortona, Italy. pp.1585 Communication dans un congrès hal-00547074v1
Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells Xb Zhang,Olivier Briot,Bernard Gil,Roger Aulombard 1st International Conference on Low Dimensional Structures and Devices, 1995, Singapore, Singapore. pp.184 Communication dans un congrès hal-00547105v1
PHOTOINDUCED SCREENING OF THE EXCITONIC INTERACTION IN ZNSE-ZNTE TYPE-II STRAINED-LAYER SUPERLATTICES Bernard Gil,Thierry Cloitre,N. Briot,Olivier Briot,P. Boringet al. 6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.868 Communication dans un congrès hal-00547281v1
SUPERLATTICE EFFECTS ON PHONONS IN STRAINED ZNTE-ZNSE STRUCTURES J. Frandon,Ma Renucci,N. Briot,Olivier Briot,Roger Aulombard 6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.513 Communication dans un congrès hal-00547280v1
CONTAMINATION EFFECTS FROM TELLURIUM IN ZNS-ZNSE SUPERLATTICES D. Bouchara,A. Abounadi,M. Diblasio,N. Briot,Thierry Cloitreet al. 6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.121 Communication dans un congrès hal-00547278v1
MOVPE-GROWTH AND PHYSICS OF ZNSE-ZNTE SUPERLATTICES Thierry Cloitre,Olivier Briot,Bernard Gil,D. Bertho,J.M. Jancuet al. 7TH TRIESTE ICTP-IUPAP SEMICONDUCTOR SYMP INT CTR THEORET PHYS, 1992, Trieste, Italy. pp.109 Communication dans un congrès hal-00547289v1
LOW-PRESSURE MOVPE GROWTH OF ZNSE, ZNTE, AND ZNSE/ZNTE STRAINED-LAYER SUPERLATTICES N. Briot,Thierry Cloitre,Olivier Briot,Bernard Gil,D. Berthoet al. 34TH ELECTRONIC MATERIALS CONF MIT, 1992, Cambridge, MA, United States. pp.537 Communication dans un congrès hal-00547291v1
OPTICAL CHARACTERIZATION OF EXTREMELY HIGH-PURITY ZNSE GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLZINC TRIETHYLAMINE ADDUCT Thierry Cloitre,N. Briot,Olivier Briot,Bernard Gil,Roger Aulombardet al. SYMP ON MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS ( OPTOELECTRONICS INTEGRATED CIRCUITS ) AND PHOTONICS, 1993, Strasbourg, France. pp.169 Communication dans un congrès hal-00547287v1
DEPTH PROFILING OF CARRIERS IN ZNSE/GAAS HETEROSTRUCTURES BY RAMAN-SPECTROSCOPY O. Pagès,Ma Renucci,Olivier Briot,Thierry Cloitre,Roger Aulombard 5TH INTERNATIONAL CONF ON II-VI-COMPOUNDS ( II-VI-91 ), 1991, Tamano, Japan. pp.569 Communication dans un congrès hal-00547295v1
RAMAN CHARACTERIZATION OF ZNSE/GAAS MOVPE HETEROSTRUCTURES O. Pagès,M. Renucci,Olivier Briot,N. Tempier,Roger Aulombard 5TH INTERNATIONAL CONF ON METALORGANIC VAPOR PHASE EPITAXY / WORKSHOP ON METALORGANIC BEAM EPITAXY, CHEMICAL BEAM EPITAXY AND GAS SOURCE MOLECULAR BEAM EPITAXY, 1990, Aachen, Germany. pp.670 Communication dans un congrès hal-00547298v1
APPLICATION OF A NEW THEORETICAL TRANSPORT STUDY TO THE ASSESSMENT OF THE PURITY OF ZNSE Olivier Briot,N. Briot,Thierry Cloitre,R. Sauvezon,Roger Aulombard DVANCED RESEARCH WORKSHOP OF THE EUROPEAN MATERIALS RESEARCH SOC : WIDE GAP 2-6 SEMICONDUCTORS, 1991, Montpellier, France. pp.A24 Communication dans un congrès hal-00547296v1
MOVPE OF HIGH-QUALITY ZNSE - ROLE OF MISMATCH ON REFLECTIVITY AND PHOTOCONDUCTIVITY Roger Aulombard,M. Averous,Olivier Briot,J. Calas,Dominique Coquillatet al. 4TH INTERNATIONAL CONF ON II-VI COMPOUNDS ( II-VI-89 ), 1989, Berlin, Germany. pp.204 Communication dans un congrès hal-00547299v1

Poster de conférence (1)

Towards an understanding of vanadium doping effects in 4H-SiC Harmke van Dijk,Matthieu Paillet,Océane Février,Sandrine Juillaguet,S. Contreraset al. Les Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France Poster de conférence hal-04829444v1

Brevet (11)

Nouveau Procédé pour la croissance de nitrures d'éléments du groupe IIIb Sandra Ruffenach,Olivier Briot,Bernard Gil N° de brevet: FR2904008. 2008 Brevet hal-00390340v1
Indium Nitride Layer production Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. N° de brevet: JP2008513327. 2008 Brevet hal-00390338v1
Method for the growth of Indium nitride Sandra Ruffenach,Olivier Briot,Bernard Gil N° de brevet: WO2008009805. 2008 Brevet hal-00390341v1
Indium Nitride Layer production Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. Patent n° : US2007269965. 2007 Brevet hal-00390336v1
Indium Nitride Layer production Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. N° de brevet: EP1799886. 2007 Brevet hal-00390337v1
Indium Nitride Layer production Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. N° de brevet: WO2006032756. 2006 Brevet hal-00390339v1
Method to manufacture Indium Nitride quantum dots Olivier Briot,Bernard Gil,Sandra Ruffenach Patent n° : EP1658394. 2006 Brevet hal-00390332v1
Réalisation d'une couche de nitrure d'indium Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. N° de brevet: FR2875333. 2006 Brevet hal-00390335v1
Method to manufacture Indium Nitride quantum dots Olivier Briot,Bernard Gil,Sandra Ruffenach Patent n° : US2005028726. 2005 Brevet hal-00390331v1
Method to manufacture Indium Nitride quantum dots Olivier Briot,Bernard Gil,Sandra Ruffenach Patent n° : AU2003274409. 2005 Brevet hal-00390333v1
Method to manufacture Indium Nitride quantum dots Olivier Briot,Bernard Gil,Sandra Ruffenach Patent n° : WO2005014897. 2005 Brevet hal-00390329v1

Autre publication scientifique (2)

Response to &quot;Comment on 'Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition'&quot; Appl. Phys. Lett. 87, 176101 (2005) R. Intartaglia,B. Maleyre,Sandra Ruffenach,Olivier Briot,T. Taliercioet al. 2005, pp.87, 176102. ⟨10.1063/1.2117613⟩ Autre publication scientifique hal-00540414v1
Comment on &quot;Mie resonances, infrared emission, and the band gap of InN&quot; - Reply Tv Shubina,Sv Ivanov,Vn Jmerik,Ps Kop'Ev,Aime Vassonet al. 2004, pp.93, 269702. ⟨10.1103/PhysRevLett.93.269702⟩ Autre publication scientifique hal-00540475v1

Mémoire d'étudiant (1)

Etude du comportement des résines à usage temporaire et des céramiques soumises à l'usure en milieu salivaire artificiel Olivier Briot,Baptiste Haudiquet Médecine humaine et pathologie. 2015 Mémoire d'étudiant hal-01898589v1