Olivier Latry

Présentation

I hold an MSc degree in electrical engineering from ESIGELEC Rouen, France from 1991 and a PhD degree in electrical engineering from the University of Rouen, France, from 1995. Since late 2008, I joined the « Groupe de Physique des Matériaux » UMR CNRS at the University of Rouen Normandy. I has carried out research on transistors and my major research interests today include microelectronic reliability on power transistors like Gallium Nitride High Electron Mobility Transistors (HEMT GaN) or Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors, (MOSFET SiC).At University Institute of Technology of Rouen, I give courses on electronics, controlled systems, microwave and radar systems. I'm one of the founder of the Microwave and Radar Training Center of Normandy (MRTC).

Publications

Article dans une revue (34)

Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET Rosine Coq Germanicus,Kimmo Niskanen,Alain Michez,Niemat Moultif,Wadia Jouhaet al. Materials Science Forum, 2022, 1062, pp.544-548. ⟨10.4028/p-973n9u⟩ Article dans une revue hal-03702520v1
A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications Olivier Latry,Niemat Moultif,Eric Joubert,Mohamed Ndiaye e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100062. ⟨10.1016/j.prime.2022.100062⟩ Article dans une revue hal-04877849v1
Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress Niemat Moultif,Olivier Latry,Eric Joubert,Mohamed Ndiaye,Christian Moreauet al. IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩ Article dans une revue hal-03174499v1
Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating Niemat Moultif,Sébastien Duguay,O. Latry,M. Ndiaye,Eric Joubert Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩ Article dans une revue hal-03469148v1
Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) Rosine Coq Germanicus,Florent Lallemand,Daniel Chateigner,Wadia Jouha,Niemat Moultifet al. Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩ Article dans une revue hal-03341563v1
Estimation of losses of GaN HEMT in power switching applications based on experimental characterization Al Mehdi Bouchour,Ahmed El Oualkadi,O. Latry,Pascal Dherbécourt,Andres Echeverri Computers and Electrical Engineering, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩ Article dans une revue hal-02614065v1
Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency A.M. Bouchour,A. El Oualkadi,Pascal Dherbécourt,O. Latry,A. Echeverri Microelectronics Reliability, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩ Article dans une revue hal-03174379v1
Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy Niemat Moultif,Andres Echeverri,Dominique Carisetti,O. Latry,Eric Joubert IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩ Article dans une revue hal-02614080v1
Evidence of Mg segregation to threading dislocation in normally-off GaN-HEMT Sébastien Duguay,Andres Echeverri,Celia Castro,Olivier Latry IEEE Transactions on Nanotechnology, 2019, 18, pp.995-998. ⟨10.1109/TNANO.2019.2942400⟩ Article dans une revue hal-02299201v1
S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application Niemat Moultif,O. Latry,Mamadou Ndiaye,Tristan Neveu,Eric Joubertet al. Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩ Article dans une revue hal-02380186v1
Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition O. Latry,Pascal Dherbécourt,Patrick Denis,Fabien Cuvilly,Moncef Kadi Engineering Failure Analysis, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩ Article dans une revue istex hal-02131204v1
Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing Lu Zhao,Antoine Normand,Jonathan Houard,Ivan Blum,Fabien Delarocheet al. Microscopy and Microanalysis, 2017, 23 (2), pp.221-226. ⟨10.1017/S1431927616012666⟩ Article dans une revue hal-02611781v1
Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures Niemat Moultif,Alexis Divay,Eric Joubert,O. Latry Engineering Failure Analysis, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩ Article dans une revue hal-01766076v1
Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures Niemat Moultif,Eric Joubert,Mohamed Lamine Masmoudi,O. Latry Microelectronics Reliability, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩ Article dans une revue hal-01765955v1
Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena O. Latry,A. Divay,D. Fadil,Pascal Dherbécourt Journal of Semiconductors, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩ Article dans une revue hal-01766037v1
Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET S. Mbarek,Pascal Dherbécourt,O. Latry,F. Fouquet Microelectronics Reliability, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩ Article dans une revue hal-01766126v1
Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests S. Mbarek,F. Fouquet,Pascal Dherbécourt,Mohamed Lamine Masmoudi,O. Latry Microelectronics Reliability, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩ Article dans une revue hal-01954256v1
RF pulse signal integrity analysis for nonlinear ended microstrip line atom-probe tomography Lu Zhao,A. Delamare,Antoine Normand,Fabien Delaroche,O. Latryet al. IOP Conference Series: Materials Science and Engineering, 2016, 120, pp.012006. ⟨10.1088/1757-899X/120/1/012006⟩ Article dans une revue hal-01954239v1
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode A. Divay,Cédric Duperrier,Farid Temcamani,O. Latry Microelectronics Reliability, 2016, 64, pp.585 - 588. ⟨10.1016/j.microrel.2016.07.123⟩ Article dans une revue hal-01690679v1
Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy Niemat Moultif,Eric Joubert,O. Latry Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩ Article dans une revue hal-02177964v1
Ageing of GaN HEMT devices: which degradation indicators? A. Divay,O. Latry,Cédric Duperrier,Farid Temcamani Journal of Semiconductors, 2016, 37 (1), ⟨10.1088/1674-4926/37/1/014001⟩ Article dans une revue hal-01740848v1
Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life Farid Temcamani,Jean Baptiste Fonder,O. Latry,Cédric Duperrier IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩ Article dans une revue hal-01299413v1
2 - Aging Power Transistors in Operational Conditions Jean Baptiste Fonder,Cédric Duperrier,Farid Temcamani,O. Latry,H. Maanane Embedded Mechatronic Systems, 2015, 2, pp.23-48. ⟨10.1016/b978-1-78548-014-0.50002-5 ⟩ Article dans une revue hal-02979964v1
Temperature and Dilatation Estimation for Modern Semiconductor Devices Eric Joubert,O. Latry,Jean-Philippe Roux Sensors & Transducers., 2015, 184 (1), pp.130-135 Article dans une revue hal-02178029v1
An athermal measurement technique for long traps characterization in GaN HEMT transistors. A Divay,Mohamed Lamine Masmoudi,Olivier Latry,C Duperrier,Farid Temcamani Microelectronics Reliability, 2015, 55, pp.1703-1707. ⟨10.1016/j.microrel.2015.06.074⟩ Article dans une revue hal-01341768v1
Performance drifts of N-MOSFETs under pulsed RF life test M.A. Belaïd,M. Gares,K. Daoud,O. Latry Microelectronics Reliability, 2014, 54 (9-10), pp.1851-1855. ⟨10.1016/j.microrel.2014.07.131⟩ Article dans une revue istex hal-02267372v1
Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests M.A. Belaïd,A.M. Nahhas,M. Gares,K. Daoud,O. Latry Microelectronics Journal, 2014, 45 (12), pp.1800-1805. ⟨10.1016/j.mejo.2014.06.002⟩ Article dans une revue istex hal-02267365v1
Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis P. Denis,Pascal Dherbécourt,O. Latry,C. Genevois,Fabien Cuvillyet al. Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩ Article dans une revue hal-02156382v1
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. Jean Baptiste Fonder,Laurence Chevalier,Cécile Genevois,O. Latry,Cédric Duperrieret al. Microelectronics Reliability, 2012, pp.2205. ⟨10.1016/j.microrel.2012.06.053⟩ Article dans une revue istex hal-00735905v1
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life. Jean Baptiste Fonder,O. Latry,Cédric Duperrier,Michel Stanislawiak,Hichame Maananeet al. Microelectronics Reliability, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩ Article dans une revue istex hal-00735899v1
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application L. Lacheze,O. Latry,Pascal Dherbécourt,K. Mourgues,V. Purohitet al. Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩ Article dans une revue istex hal-02267392v1
Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network F. Khecib,O. Latry,Pascal Dherbécourt,M. Kétata Optics Communications, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩ Article dans une revue istex hal-02267382v1
A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications O. Latry,Pascal Dherbécourt,K. Mourgues,H. Maanane,P. Sipmaet al. Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩ Article dans une revue istex hal-02267399v1
Comparison of different feedback signals used in one stage PMD compensators for different modulation formats Guillaume Ducournau,O. Latry,E. Joubert,M. Ketata IEEE Transactions on Communications, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩ Article dans une revue hal-00356948v1

Communication dans un congrès (25)

Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test El Mehdi Meknassi,Niemat Moultif,Sébastien Duguay,Benoit Lambert,Gabriel Bertaoet al. ESREF 2025 - 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France Communication dans un congrès hal-05323093v2
SiC MOSFET micro-explosion due to a single event burnout: analysis at the device and die levels Rosine Coq Germanicus,Tanguy Phulpin,Thomas Rogaume,Kimmo Niskanen,Sandrine Froissartet al. ISTFA 2023 - the 49th International Symposium for Testing and Failure Analysis Conference, Nov 2023, Phoenix, United States. pp.483-490, ⟨10.31399/asm.cp.istfa2023p0483⟩ Communication dans un congrès hal-04285320v1
Parametric nano-electrical analysis for SiC junctions of a packaged device Rosine Coq Germanicus,Wadia Jouha,Niemat Moultif,Peter de Wolf,Vishal Shahet al. WiPDA Europe 2022 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, Sep 2022, Coventry, United Kingdom. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩ Communication dans un congrès hal-04124443v1
Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements Al Mehdi Bouchour,Pascal Dherbécourt,Ahmed El Oualkadi,Olivier Latry 2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩ Communication dans un congrès hal-03354896v1
Temperature Effects of GaN HEMTs on the Design of Power Converters Al Mehdi Bouchour,Pascal Dherbécourt,Olivier Latry,Ahmed El Oualkadi Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco, Apr 2019, Kenitra, France. ⟨10.4108/eai.24-4-2019.2284227⟩ Communication dans un congrès hal-04879301v1
New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration Pascal Dherbécourt,Ahmed El Oualkadi,Eric Joubert,Al Mehdi Bouchour,Wadia Jouhaet al. Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco, Apr 2019, Kenitra, France. ⟨10.4108/eai.24-4-2019.2284211⟩ Communication dans un congrès hal-04879309v1
Temperature estimation of high-electron mobility transistors AlGaN/GaN O. Latry,Eric Joubert,Tristan Neveu,Niemat Moultif,Mohamed Ndiaye 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩ Communication dans un congrès hal-02131183v1
SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations Niemat Moultif,Eric Joubert,Olivier Latry 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩ Communication dans un congrès hal-02181679v1
Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm Al Mehdi Bouchour,Pascal Dherbécourt,Andres Echeverri,Ahmed El Oualkadi,O. Latry 2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6 Communication dans un congrès hal-02131106v1
Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures Niemat Moultif,Eric Joubert,Mohamed Lamine Masmoudi,O. Latry 2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩ Communication dans un congrès hal-01765953v1
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode Alexis Divay,Cédric Duperrier,Farid Temcamani,O. Latry ESREF 2016, Sep 2016, Saale, Germany Communication dans un congrès hal-01687227v1
Study of different algorithms and models for trapping effect extraction Alexis Divay,Mohamed Lamine Masmoudi,O. Latry,Cédric Duperrier,Farid Temcamaniet al. 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), May 2016, Krakow, France. ⟨10.1109/MIKON.2016.7491990⟩ Communication dans un congrès hal-01740879v1
Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques Mbarek Safa,Pascal Dherbécourt,François Fouquet,Olivier Latry Télécom & JFMMA, 2015, Meknès, Maroc Communication dans un congrès hal-02407378v1
RF transient pulse signal integrity with ns-duration for atom-probe tomography Lu Zhao,A. Delamare,Antoine Normand,Fabien Delaroche,O. Latryet al. 2015 IEEE Radio and Antenna Days of the Indian Ocean (RADIO), Sep 2015, Belle Mare, France. pp.1-2, ⟨10.1109/RADIO.2015.7323403⟩ Communication dans un congrès hal-02107624v1
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors Alexis Divay,Mohamed Lamine Masmoudi,Olivier Latry,Cédric Duperrier,Farid Temcamani ESREF 2015, Oct 2015, Toulouse, France Communication dans un congrès hal-01230925v1
Caractérisation de la diode d'un transistor HEMT en GaN sous illumination UV Alexis Divay,O. Latry,Cédric Duperrier,Farid Temcamani TELECOM’2015 & 9èmes JFMMA, May 2015, Meknes, Maroc Communication dans un congrès hal-01230931v1
Physical analysis of power AlGaN/GaN HEMT reliability Farid Temcamani,Jean Baptiste Fonder,Cédric Duperrier,O. Latry IEICE Workshop on Circuits, Systems and Information Technology (WCSIT), Jul 2014, Iasi, Romania Communication dans un congrès hal-01740954v1
Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier Patrick Denis,Pascal Dherbécourt,O. Latry Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065192v1
Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints Mbarek Safa,Pascal Dherbécourt,O. Latry,Francois Fouquet,Othman Dhouhaet al. CENICS, 2014, Lisbonne, Portugal Communication dans un congrès hal-01700474v1
Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization Jean-Baptiste Fonder,O. Latry,Farid Temcamani,Cédric Duperrier 2014 International Conference on Multimedia Computing and Systems (ICMCS), Apr 2014, Marrakech, France. ⟨10.1109/ICMCS.2014.6911421⟩ Communication dans un congrès hal-01740889v1
Fiabilité d'amplificateurs de puissance à base de GaN: analyse de la défaillance O. Latry,Jean Baptiste Fonder,Laurence Chevalier,Genevois G.,Cédric Duperrieret al. Colloque International TELECOM'2013 & 8ème JFMMA, Mar 2013, Marrakech, Maroc Communication dans un congrès hal-01740909v1
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test Jean Baptiste Fonder,Laurence Chevalier,Cécile Genevois,Olivier Latry,Cédric Duperrieret al. 23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2012, Cagliari, Italy. pp.2205 Communication dans un congrès hal-00735910v1
A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing. Jean Baptiste Fonder,Cédric Duperrier,Olivier Latry,Michel Stanislawiak,Philippe Eudelineet al. EUROPEAN MICROWAVE WEEK 2012, Oct 2012, Amsterdam, Netherlands. In press Communication dans un congrès hal-00735915v1
Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S. Jean Baptiste Fonder,Farid Temcamani,Cédric Duperrier,Olivier Latry,Pascal Dherbécourtet al. 17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2 Communication dans un congrès hal-00671523v1
Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN. Jean Baptiste Fonder,Farid Temcamani,Cédric Duperrier,Olivier Latry,Pascal Dherbécourtet al. 13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38 Communication dans un congrès hal-00735895v1

Poster de conférence (1)

Analyse par électroluminescence des dégradations de transistor MOSFET en SiC Tien Anh Nguyen,Echeverri Andres,Mbarek Safa,Niemat Moultif,Pascal Dherbécourtet al. Symposium de Génie Electrique 2016 - SGE2016, Jun 2016, Grenoble, France Poster de conférence hal-01696225v1

Chapitre d'ouvrage (6)

Reliability and Qualification Tests for High-Power MOSFET Transistors Niemat Moultif,Mohamed Lamine Masmoudi,Eric Joubert,O. Latry Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩ Chapitre d'ouvrage hal-01927246v1
Reliability Study of High-Power Mechatronic Components by Spectral Photoemission Microscopy Niemat Moultif,Alexis Divay,Eric Joubert,O. Latry Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩ Chapitre d'ouvrage hal-01927247v1
Chap.8 High-Efficiency Architecture for Power Amplifiers Farid Temcamani,Jean Baptiste Fonder,Cédric Duperrier,O. Latry Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.217-240, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50008-6⟩ Chapitre d'ouvrage hal-01740811v1
Physical Defects Analysis of Mechatronic Systems Christian Gautier,Eric Pieraerts,O. Latry Embedded Mechatronic Systems 2, Elsevier, pp.49-77, 2015, ⟨10.1016/B978-1-78548-014-0.50003-7⟩ Chapitre d'ouvrage hal-02130929v1
Internal Temperature Measurement of Electronic Components Eric Joubert,Olivier Latry,Pascal Dherbécourt,Maxime Fontaine,Christian Gautieret al. Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩ Chapitre d'ouvrage hal-02173702v1
Chap 2. Aging Power Transistors in Operational Conditions Pascal Dherbécourt,O. Latry,K. Dehais-Mourgues,Jean Baptiste Fonder,Cédric Duperrieret al. Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩ Chapitre d'ouvrage hal-01740826v1