
Olivier Latry
Présentation
I hold an MSc degree in electrical engineering from ESIGELEC Rouen, France from 1991 and a PhD degree in electrical engineering from the University of Rouen, France, from 1995. Since late 2008, I joined the « Groupe de Physique des Matériaux » UMR CNRS at the University of Rouen Normandy. I has carried out research on transistors and my major research interests today include microelectronic reliability on power transistors like Gallium Nitride High Electron Mobility Transistors (HEMT GaN) or Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors, (MOSFET SiC). At University Institute of Technology of Rouen, I give courses on electronics, controlled systems, microwave and radar systems. I'm one of the founder of the Microwave and Radar Training Center of Normandy (MRTC).
Publications
Publications
|
SiC MOSFET micro-explosion due to a single event burnout: analysis at the device and die levelsISTFA 2023 - the 49th International Symposium for Testing and Failure Analysis Conference, Nov 2023, Phoenix, United States. pp.483-490, ⟨10.31399/asm.cp.istfa2023p0483⟩
Communication dans un congrès
hal-04285320
v1
|
|
Parametric nano-electrical analysis for SiC junctions of a packaged deviceWiPDA Europe 2022 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, Sep 2022, Coventry, United Kingdom. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
Communication dans un congrès
hal-04124443
v1
|
Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩
Communication dans un congrès
hal-03354896
v1
|
|
Temperature estimation of high-electron mobility transistors AlGaN/GaN2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩
Communication dans un congrès
hal-02131183
v1
|
|
SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩
Communication dans un congrès
hal-02181679
v1
|
|
Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6
Communication dans un congrès
hal-02131106
v1
|
|
Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩
Communication dans un congrès
hal-01765953
v1
|
|
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF modeESREF 2016, Sep 2016, Saale, Germany
Communication dans un congrès
hal-01687227
v1
|
|
Study of different algorithms and models for trapping effect extraction2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), May 2016, Krakow, France. ⟨10.1109/MIKON.2016.7491990⟩
Communication dans un congrès
hal-01740879
v1
|
|
RF transient pulse signal integrity with ns-duration for atom-probe tomography2015 IEEE Radio and Antenna Days of the Indian Ocean (RADIO), Sep 2015, Belle Mare, France. pp.1-2, ⟨10.1109/RADIO.2015.7323403⟩
Communication dans un congrès
hal-02107624
v1
|
|
Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiquesTélécom & JFMMA, 2015, Meknès, Maroc
Communication dans un congrès
hal-02407378
v1
|
|
|
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistorsESREF 2015, Oct 2015, Toulouse, France
Communication dans un congrès
hal-01230925
v1
|
|
Caractérisation de la diode d'un transistor HEMT en GaN sous illumination UVTELECOM’2015 & 9èmes JFMMA, May 2015, Meknes, Maroc
Communication dans un congrès
hal-01230931
v1
|
Physical analysis of power AlGaN/GaN HEMT reliabilityIEICE Workshop on Circuits, Systems and Information Technology (WCSIT), Jul 2014, Iasi, Romania
Communication dans un congrès
hal-01740954
v1
|
|
Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal ConstraintsCENICS, 2014, Lisbonne, Portugal
Communication dans un congrès
hal-01700474
v1
|
|
|
Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulierSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065192
v1
|
Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization2014 International Conference on Multimedia Computing and Systems (ICMCS), Apr 2014, Marrakech, France. ⟨10.1109/ICMCS.2014.6911421⟩
Communication dans un congrès
hal-01740889
v1
|
|
Fiabilité d'amplificateurs de puissance à base de GaN: analyse de la défaillanceColloque International TELECOM'2013 & 8ème JFMMA, Mar 2013, Marrakech, Maroc
Communication dans un congrès
hal-01740909
v1
|
|
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2012, Cagliari, Italy. pp.2205
Communication dans un congrès
hal-00735910
v1
|
|
A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing.EUROPEAN MICROWAVE WEEK 2012, Oct 2012, Amsterdam, Netherlands. In press
Communication dans un congrès
hal-00735915
v1
|
|
|
Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2
Communication dans un congrès
hal-00671523
v1
|
Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38
Communication dans un congrès
hal-00735895
v1
|
Analyse par électroluminescence des dégradations de transistor MOSFET en SiCSymposium de Génie Electrique 2016 - SGE2016, Jun 2016, Grenoble, France
Poster de conférence
hal-01696225
v1
|
Reliability Study of High-Power Mechatronic Components by Spectral Photoemission MicroscopyReliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩
Chapitre d'ouvrage
hal-01927247
v1
|
|
Reliability and Qualification Tests for High-Power MOSFET TransistorsReliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩
Chapitre d'ouvrage
hal-01927246
v1
|
|
Physical Defects Analysis of Mechatronic SystemsEmbedded Mechatronic Systems 2, Elsevier, pp.49-77, 2015, ⟨10.1016/B978-1-78548-014-0.50003-7⟩
Chapitre d'ouvrage
hal-02130929
v1
|
|
Internal Temperature Measurement of Electronic ComponentsAbdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩
Chapitre d'ouvrage
hal-02173702
v1
|
|
Chap.8 High-Efficiency Architecture for Power AmplifiersEmbedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.217-240, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50008-6⟩
Chapitre d'ouvrage
hal-01740811
v1
|
|
Chap 2. Aging Power Transistors in Operational ConditionsEmbedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩
Chapitre d'ouvrage
hal-01740826
v1
|