Olivier Latry

63
Documents

Présentation

I hold an MSc degree in electrical engineering from ESIGELEC Rouen, France from 1991 and a PhD degree in electrical engineering from the University of Rouen, France, from 1995. Since late 2008, I joined the « Groupe de Physique des Matériaux » UMR CNRS at the University of Rouen Normandy. I has carried out research on transistors and my major research interests today include microelectronic reliability on power transistors like Gallium Nitride High Electron Mobility Transistors (HEMT GaN) or Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors, (MOSFET SiC). At University Institute of Technology of Rouen, I give courses on electronics, controlled systems, microwave and radar systems. I'm one of the founder of the Microwave and Radar Training Center of Normandy (MRTC).

Publications

Publications

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Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Rosine Coq Germanicus , Kimmo Niskanen , Alain Michez , Niemat Moultif , Wadia Jouha et al.
Materials Science Forum, 2022, 1062, pp.544-548. ⟨10.4028/p-973n9u⟩
Article dans une revue hal-03702520 v1

A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications

Olivier Latry , Niemat Moultif , Eric Joubert , Mohamed Ndiaye
e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100062. ⟨10.1016/j.prime.2022.100062⟩
Article dans une revue hal-04877849 v1
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Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

Niemat Moultif , Sébastien Duguay , O. Latry , M. Ndiaye , Eric Joubert
Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩
Article dans une revue hal-03469148 v1

Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

Niemat Moultif , Olivier Latry , Eric Joubert , Mohamed Ndiaye , Christian Moreau et al.
IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩
Article dans une revue hal-03174499 v1
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Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Rosine Coq Germanicus , Florent Lallemand , Daniel Chateigner , Wadia Jouha , Niemat Moultif et al.
Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩
Article dans une revue hal-03341563 v1

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Al Mehdi Bouchour , Ahmed El Oualkadi , O. Latry , Pascal Dherbécourt , Andres Echeverri
Computers and Electrical Engineering, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩
Article dans une revue hal-02614065 v1

Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

Niemat Moultif , Andres Echeverri , Dominique Carisetti , O. Latry , Eric Joubert
IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩
Article dans une revue hal-02614080 v1
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Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency

A.M. Bouchour , A. El Oualkadi , Pascal Dherbécourt , O. Latry , A. Echeverri
Microelectronics Reliability, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩
Article dans une revue hal-03174379 v1

Evidence of Mg segregation to threading dislocation in normally-off GaN-HEMT

Sébastien Duguay , Andres Echeverri , Celia Castro , Olivier Latry
IEEE Transactions on Nanotechnology, 2019, 18, pp.995-998. ⟨10.1109/TNANO.2019.2942400⟩
Article dans une revue hal-02299201 v1
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S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

Niemat Moultif , O. Latry , Mamadou Ndiaye , Tristan Neveu , Eric Joubert et al.
Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩
Article dans une revue hal-02380186 v1

Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

O. Latry , Pascal Dherbécourt , Patrick Denis , Fabien Cuvilly , Moncef Kadi
Engineering Failure Analysis, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩
Article dans une revue hal-02131204 v1

Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing

Lu Zhao , Antoine Normand , Jonathan Houard , Ivan Blum , Fabien Delaroche et al.
Microscopy and Microanalysis, 2017, 23 (2), pp.221-226. ⟨10.1017/S1431927616012666⟩
Article dans une revue hal-02611781 v1

Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry
Engineering Failure Analysis, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩
Article dans une revue hal-01766076 v1

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry
Microelectronics Reliability, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩
Article dans une revue hal-01765955 v1

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

O. Latry , A. Divay , D. Fadil , Pascal Dherbécourt
Journal of Semiconductors, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩
Article dans une revue hal-01766037 v1

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

S. Mbarek , Pascal Dherbécourt , O. Latry , F. Fouquet
Microelectronics Reliability, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩
Article dans une revue hal-01766126 v1

Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests

S. Mbarek , F. Fouquet , Pascal Dherbécourt , Mohamed Lamine Masmoudi , O. Latry
Microelectronics Reliability, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩
Article dans une revue hal-01954256 v1
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RF pulse signal integrity analysis for nonlinear ended microstrip line atom-probe tomography

Lu Zhao , A. Delamare , Antoine Normand , Fabien Delaroche , O. Latry et al.
IOP Conference Series: Materials Science and Engineering, 2016, 120, pp.012006. ⟨10.1088/1757-899X/120/1/012006⟩
Article dans une revue hal-01954239 v1

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

A. Divay , Cédric Duperrier , Farid Temcamani , O. Latry
Microelectronics Reliability, 2016, 64, pp.585 - 588. ⟨10.1016/j.microrel.2016.07.123⟩
Article dans une revue hal-01690679 v1

Ageing of GaN HEMT devices: which degradation indicators?

A. Divay , O. Latry , Cédric Duperrier , Farid Temcamani
Journal of Semiconductors, 2016, 37 (1), ⟨10.1088/1674-4926/37/1/014001⟩
Article dans une revue hal-01740848 v1

Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy

Niemat Moultif , Eric Joubert , O. Latry
Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩
Article dans une revue hal-02177964 v1
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Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Farid Temcamani , Jean Baptiste Fonder , O. Latry , Cédric Duperrier
IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩
Article dans une revue hal-01299413 v1

2 - Aging Power Transistors in Operational Conditions

Jean Baptiste Fonder , Cédric Duperrier , Farid Temcamani , O. Latry , H. Maanane
Embedded Mechatronic Systems, 2015, 2, pp.23-48. ⟨10.1016/b978-1-78548-014-0.50002-5 ⟩
Article dans une revue hal-02979964 v1

Temperature and Dilatation Estimation for Modern Semiconductor Devices

Eric Joubert , O. Latry , Jean-Philippe Roux
Sensors & Transducers., 2015, 184 (1), pp.130-135
Article dans une revue hal-02178029 v1
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An athermal measurement technique for long traps characterization in GaN HEMT transistors.

A Divay , Mohamed Lamine Masmoudi , Olivier Latry , C Duperrier , Farid Temcamani
Microelectronics Reliability, 2015, 55, pp.1703-1707. ⟨10.1016/j.microrel.2015.06.074⟩
Article dans une revue hal-01341768 v1

Performance drifts of N-MOSFETs under pulsed RF life test

M.A. Belaïd , M. Gares , K. Daoud , O. Latry
Microelectronics Reliability, 2014, 54 (9-10), pp.1851-1855. ⟨10.1016/j.microrel.2014.07.131⟩
Article dans une revue hal-02267372 v1

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests

M.A. Belaïd , A.M. Nahhas , M. Gares , K. Daoud , O. Latry
Microelectronics Journal, 2014, 45 (12), pp.1800-1805. ⟨10.1016/j.mejo.2014.06.002⟩
Article dans une revue hal-02267365 v1

Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

P. Denis , Pascal Dherbécourt , O. Latry , C. Genevois , Fabien Cuvilly et al.
Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩
Article dans une revue hal-02156382 v1

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.

Jean Baptiste Fonder , Laurence Chevalier , Cécile Genevois , O. Latry , Cédric Duperrier et al.
Microelectronics Reliability, 2012, pp.2205. ⟨10.1016/j.microrel.2012.06.053⟩
Article dans une revue istex hal-00735905 v1

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life.

Jean Baptiste Fonder , O. Latry , Cédric Duperrier , Michel Stanislawiak , Hichame Maanane et al.
Microelectronics Reliability, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩
Article dans une revue istex hal-00735899 v1

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application

L. Lacheze , O. Latry , Pascal Dherbécourt , K. Mourgues , V. Purohit et al.
Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Article dans une revue hal-02267392 v1

Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network

F. Khecib , O. Latry , Pascal Dherbécourt , M. Kétata
Optics Communications, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩
Article dans une revue istex hal-02267382 v1

A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications

O. Latry , Pascal Dherbécourt , K. Mourgues , H. Maanane , P. Sipma et al.
Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Article dans une revue hal-02267399 v1

Comparison of different feedback signals used in one stage PMD compensators for different modulation formats

Guillaume Ducournau , O. Latry , E. Joubert , M. Ketata
IEEE Transactions on Communications, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩
Article dans une revue hal-00356948 v1
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SiC MOSFET micro-explosion due to a single event burnout: analysis at the device and die levels

Rosine Coq Germanicus , Tanguy Phulpin , Thomas Rogaume , Kimmo Niskanen , Sandrine Froissart et al.
ISTFA 2023 - the 49th International Symposium for Testing and Failure Analysis Conference, Nov 2023, Phoenix, United States. pp.483-490, ⟨10.31399/asm.cp.istfa2023p0483⟩
Communication dans un congrès hal-04285320 v1
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Parametric nano-electrical analysis for SiC junctions of a packaged device

Rosine Coq Germanicus , Wadia Jouha , Niemat Moultif , Peter de Wolf , Vishal Shah et al.
WiPDA Europe 2022 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, Sep 2022, Coventry, United Kingdom. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
Communication dans un congrès hal-04124443 v1

Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Al Mehdi Bouchour , Pascal Dherbécourt , Ahmed El Oualkadi , Olivier Latry
2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩
Communication dans un congrès hal-03354896 v1

Temperature estimation of high-electron mobility transistors AlGaN/GaN

O. Latry , Eric Joubert , Tristan Neveu , Niemat Moultif , Mohamed Ndiaye
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩
Communication dans un congrès hal-02131183 v1

SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

Niemat Moultif , Eric Joubert , Olivier Latry
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩
Communication dans un congrès hal-02181679 v1

Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

Al Mehdi Bouchour , Pascal Dherbécourt , Andres Echeverri , Ahmed El Oualkadi , O. Latry
2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6
Communication dans un congrès hal-02131106 v1

Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry
2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩
Communication dans un congrès hal-01765953 v1

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Alexis Divay , Cédric Duperrier , Farid Temcamani , O. Latry
ESREF 2016, Sep 2016, Saale, Germany
Communication dans un congrès hal-01687227 v1

Study of different algorithms and models for trapping effect extraction

Alexis Divay , Mohamed Lamine Masmoudi , O. Latry , Cédric Duperrier , Farid Temcamani et al.
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), May 2016, Krakow, France. ⟨10.1109/MIKON.2016.7491990⟩
Communication dans un congrès hal-01740879 v1

RF transient pulse signal integrity with ns-duration for atom-probe tomography

Lu Zhao , A. Delamare , Antoine Normand , Fabien Delaroche , O. Latry et al.
2015 IEEE Radio and Antenna Days of the Indian Ocean (RADIO), Sep 2015, Belle Mare, France. pp.1-2, ⟨10.1109/RADIO.2015.7323403⟩
Communication dans un congrès hal-02107624 v1

Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques

Mbarek Safa , Pascal Dherbécourt , François Fouquet , Olivier Latry
Télécom & JFMMA, 2015, Meknès, Maroc
Communication dans un congrès hal-02407378 v1
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An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors

Alexis Divay , Mohamed Lamine Masmoudi , Olivier Latry , Cédric Duperrier , Farid Temcamani
ESREF 2015, Oct 2015, Toulouse, France
Communication dans un congrès hal-01230925 v1
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Caractérisation de la diode d'un transistor HEMT en GaN sous illumination UV

Alexis Divay , O. Latry , Cédric Duperrier , Farid Temcamani
TELECOM’2015 & 9èmes JFMMA, May 2015, Meknes, Maroc
Communication dans un congrès hal-01230931 v1

Physical analysis of power AlGaN/GaN HEMT reliability

Farid Temcamani , Jean Baptiste Fonder , Cédric Duperrier , O. Latry
IEICE Workshop on Circuits, Systems and Information Technology (WCSIT), Jul 2014, Iasi, Romania
Communication dans un congrès hal-01740954 v1

Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints

Mbarek Safa , Pascal Dherbécourt , O. Latry , Francois Fouquet , Othman Dhouha et al.
CENICS, 2014, Lisbonne, Portugal
Communication dans un congrès hal-01700474 v1
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Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier

Patrick Denis , Pascal Dherbécourt , O. Latry
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065192 v1

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization

Jean-Baptiste Fonder , O. Latry , Farid Temcamani , Cédric Duperrier
2014 International Conference on Multimedia Computing and Systems (ICMCS), Apr 2014, Marrakech, France. ⟨10.1109/ICMCS.2014.6911421⟩
Communication dans un congrès hal-01740889 v1

Fiabilité d'amplificateurs de puissance à base de GaN: analyse de la défaillance

O. Latry , Jean Baptiste Fonder , Laurence Chevalier , Genevois G. , Cédric Duperrier et al.
Colloque International TELECOM'2013 & 8ème JFMMA, Mar 2013, Marrakech, Maroc
Communication dans un congrès hal-01740909 v1

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Jean Baptiste Fonder , Laurence Chevalier , Cécile Genevois , Olivier Latry , Cédric Duperrier et al.
23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2012, Cagliari, Italy. pp.2205
Communication dans un congrès hal-00735910 v1

A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing.

Jean Baptiste Fonder , Cédric Duperrier , Olivier Latry , Michel Stanislawiak , Philippe Eudeline et al.
EUROPEAN MICROWAVE WEEK 2012, Oct 2012, Amsterdam, Netherlands. In press
Communication dans un congrès hal-00735915 v1
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Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt et al.
17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2
Communication dans un congrès hal-00671523 v1

Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt et al.
13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38
Communication dans un congrès hal-00735895 v1

Reliability Study of High-Power Mechatronic Components by Spectral Photoemission Microscopy

Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry
Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩
Chapitre d'ouvrage hal-01927247 v1

Reliability and Qualification Tests for High-Power MOSFET Transistors

Niemat Moultif , Mohamed Lamine Masmoudi , Eric Joubert , O. Latry
Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩
Chapitre d'ouvrage hal-01927246 v1

Physical Defects Analysis of Mechatronic Systems

Christian Gautier , Eric Pieraerts , O. Latry
Embedded Mechatronic Systems 2, Elsevier, pp.49-77, 2015, ⟨10.1016/B978-1-78548-014-0.50003-7⟩
Chapitre d'ouvrage hal-02130929 v1

Internal Temperature Measurement of Electronic Components

Eric Joubert , Olivier Latry , Pascal Dherbécourt , Maxime Fontaine , Christian Gautier et al.
Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩
Chapitre d'ouvrage hal-02173702 v1

Chap.8 High-Efficiency Architecture for Power Amplifiers

Farid Temcamani , Jean Baptiste Fonder , Cédric Duperrier , O. Latry
Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.217-240, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50008-6⟩
Chapitre d'ouvrage hal-01740811 v1

Chap 2. Aging Power Transistors in Operational Conditions

Pascal Dherbécourt , O. Latry , K. Dehais-Mourgues , Jean Baptiste Fonder , Cédric Duperrier et al.
Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩
Chapitre d'ouvrage hal-01740826 v1