Pedro Rocha

Publications

Poster de conférence (2)

Deep-Level Transient Spectroscopy evaluation of epilayers grown on bulk GaN substrates for vertical devices Pedro Fernandes Paes Pinto Rocha,Kevin Nadaud,Giuseppe Greco,Taoufik Slimani Tlemcani,Michal Bockowskiet al. 15th International Conference on Nitride Semiconductors (ICNS-15), Jul 2025, Malmö, Sweden Poster de conférence hal-05234860v1
Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment. Vishwajeet Maurya,Daniel Alquier,Hala El Rammouz,Pedro Fernandes Paes Pinto Rocha,Eugénie Martinezet al. GaN Marathon 2024, Jun 2024, Verona, Italy. 2024 Poster de conférence cea-04667618v1

Communication dans un congrès (7)

A Comparison Study of Substrates Quality for GaN Vertical Devices Pedro Fernandes Paes Pinto Rocha,Kevin Nadaud,Giuseppe Greco,Taoufik Slimani Tlemcani,Michal Bockowskiet al. International GaN4AP Workshop : GaN for Advanced Power Applications, Feb 2025, Catane, Italy Communication dans un congrès hal-04988232v1
Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications Blend Mohamad,Cyrille Le Royer,Florian Rigaud-Minet,Clémentine Piotrowicz,Pedro Fernandes Paes Pinto Rochaet al. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. ⟨10.1109/EDTM55494.2023.10102971⟩ Communication dans un congrès cea-04528484v1
L'HAXPES de laboratoire pour les nouvelles technologies en microélectronique Eugénie Martinez,Tarek Spelta,Pedro Fernandes Paes Pinto Rocha,Jules Courtin,Marc Veillerotet al. JNSPE 2023 - Les Journées Nationales des Spectroscopies de Photoemission, CEMEF, May 2023, Sophia-Antipolis, France Communication dans un congrès cea-04196708v1
Impact of gate morphology on electrical performances of recessed GaN-on Si MOS channel-HEMT for different channel orientations Clémentine Piotrowicz,Blend Mohamad,Pedro Fernandes Paes Pinto Rocha,N. Malbert,Simon Ruelet al. ISPSD 2023 - International Symposium on Power Semiconductor Devices and ICs, May 2023, Hong-Kong, Hong Kong SAR China. pp.382-385, ⟨10.1109/ISPSD57135.2023.10147642⟩ Communication dans un congrès cea-04528487v1
Laboratory HAXPES of GaN structures for power electronic Eugénie Martinez,Tarek Spelta,Pedro Fernandes Paes Pinto Rocha,Marc Veillerot,Bérangère Hyotet al. HAXPES 2022 - The 9th International Conference on Hard X-ray Photoelectron Spectroscopy, May 2022, Himeji, Japan Communication dans un congrès cea-03689191v1
Caractérisation de structures GaN par HAXPES pour l'électronique de puissance Tarek Spelta,Eugénie Martinez,Marc Veillerot,Pedro Fernandes Paes Pinto Rocha,Sarah Boubeniaet al. JNSPE 2022 - Journées Nationales des Spectroscopies de PhotoEmission, May 2022, Dijon, France Communication dans un congrès cea-04325037v1
Characterization of GaN structures by a combined SIMS and HAXPES approach Tarek Spelta,Marc Veillerot,Eugénie Martinez,Laura Vauche,Pedro Fernandes Paes Pinto Rochaet al. EVC 16 - The 16th European Vacuum Congress, Nov 2021, Marseille, France Communication dans un congrès cea-04503612v1

Article dans une revue (9)

Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment Vishwajeet Maurya,Daniel Alquier,Hala El Rammouz,Pedro Fernandes Paes Pinto Rocha,Thomas Kaltsouniset al. Power Electronic Devices and Components, 2025, 11, pp.100092. ⟨10.1016/j.pedc.2025.100092⟩ Article dans une revue hal-05201973v1
Effect of Al 2 O 3 thickness and oxidant precursors on the interface composition and contamination in Al 2 O 3 /GaN structures Tarek Spelta,Eugénie Martinez,Marc Veillerot,Pedro Fernandes Paes Pinto Rocha,Laura Vaucheet al. Surface and Interface Analysis, 2024, 57 (21), pp.215106. ⟨10.1002/sia.7299⟩ Article dans une revue hal-04509863v1
Synthesis of AlOxNy thin films using a two-step PE-ALD process Mohammed Zeghouane,Pedro Fernandes Paes Pinto Rocha,Sarah Boubenia,Franck Bassani,Gauthier Lefevreet al. AIP Advances, 2023, 13 (8), ⟨10.1063/5.0154468⟩ Article dans une revue hal-04216905v1
Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices Pedro Fernandes Paes Pinto Rocha,Laura Vauche,Messaoud Bedjaoui,Stephane Cadot,Blend Mohamadet al. Solid-State Electronics, 2023, 209, pp.108780. ⟨10.1016/j.sse.2023.108780⟩ Article dans une revue cea-04557061v1
Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach Tarek Spelta,Marc Veillerot,Eugénie Martinez,Nicolas Chevalier,Denis Mariolleet al. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2023, Secondary Ion Mass Spectrometry (SIMS), 41 (3), pp.034003. ⟨10.1116/6.0002573⟩ Article dans une revue hal-04216907v1
Recent developments and prospects of fully recessed MIS gate structures for GaN on Si power transistors Pedro Fernandes Paes Pinto Rocha,Laura Vauche,Patricia Pimenta-Barros,Simon Ruel,René Escoffieret al. Energies, 2023, 16 (7), ⟨10.3390/en16072978⟩ Article dans une revue hal-04215264v1
Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT Paes Fernandes Paes Pinto Rocha,L. Vauche,B. Mohamad,W. Vandendaele,E. Martinezet al. Power Electronic Devices and Components, 2023, pp.100033. ⟨10.1016/j.pedc.2023.100033⟩ Article dans une revue hal-03940756v1
Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM Tarek Spelta,Marc Veillerot,Eugénie Martinez,Denis Mariolle,Roselyne Templieret al. Solid-State Electronics, 2023, 208, pp.108743. ⟨10.1016/j.sse.2023.108743⟩ Article dans une revue hal-04216926v1
Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors Pedro Fernandes Paes Pinto Rocha,Mohammed Zeghouane,Sarah Boubenia,Franck Bassani,Laura Vaucheet al. Advanced Electronic Materials, 2023, 10 (3), ⟨10.1002/aelm.202300528⟩ Article dans une revue hal-04509895v1

Thèse (1)

Optimization of dielectric/GaN interface for MIS gate power devices Pedro Fernandes Paes Pinto Rocha Electric power. Université Grenoble Alpes [2020-..], 2023. English. ⟨NNT : 2023GRALT074⟩ Thèse tel-04496081v1