Philippe Dollfus

Publications

Article dans une revue (74)

Static and dynamic Monte Carlo simulations of phonon drag effects on thermoelectric properties in silicon nanostructures Mohammad Ghanem,Philippe Dollfus,Raja Sen,Jelena Sjakste,Jérôme Saint-Martin Computational Materials Science, 2026, 268, pp.114630. ⟨10.1016/j.commatsci.2026.114630⟩ Article dans une revue hal-05447127v1
Ultrafast dynamics of hot carriers: Theoretical approaches based on real-time propagation of carrier distributions Jelena Sjakste,Raja Sen,Nathalie Vast,Jérôme Saint-Martin,Mohammad Ghanemet al. The Journal of Chemical Physics, 2025, 162 (6), pp.061002. ⟨10.1063/5.0245834⟩ Article dans une revue hal-04946288v1
Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current D K Nguyen,A. Pilotto,D. Lizzit,M. Pala,Philippe Dollfuset al. IEEE Transactions on Electron Devices, 2025, 72 (12), pp.7114 - 7121. ⟨10.1109/ted.2025.3627189⟩ Article dans une revue hal-05407740v1
Anomalous Temperature-Dependent Thermal Transport in Crystalline Polyethylene Driven by Strong Anharmonicity Shouhang Li,Philippe Dollfus,Jérôme Saint-Martin,Davide Romanin Journal of Physical Chemistry Letters, 2025, 16 (39), pp.10210-10215. ⟨10.1021/acs.jpclett.5c02084⟩ Article dans une revue hal-05284461v1
Thermal conductance of twisted-layer graphite nanofibers Van-Truong Tran,Thanh-Tra Vu,Jérôme Saint-Martin,Marco Pala,Philippe Dollfus Carbon, 2023, 204, pp.601-611. ⟨10.1016/j.carbon.2022.12.059⟩ Article dans une revue hal-03995068v1
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials Adel Mfoukh,Jérôme Saint-Martin,Philippe Dollfus,Marco Pala Journal of Computational Electronics, 2023, 22, pp.1257-1263. ⟨10.1007/s10825-023-02080-2⟩ Article dans une revue hal-04161457v1
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes A. Pilotto,J. Saint-Martin,Marco G. Pala,Philippe Dollfus Solid-State Electronics, 2022, 198, pp.108469. ⟨10.1016/j.sse.2022.108469⟩ Article dans une revue hal-03818605v1
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices Remi Helleboid,Denis Rideau,Jeremy Grebot,Isobel Nicholson,Norbert Moussyet al. IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩ Article dans une revue hal-03794480v1
Phonon-assisted transport in van der Waals heterostructure tunnel devices A. M'Foukh,Jérôme Saint-Martin,Philippe Dollfus,Marco G. Pala Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩ Article dans une revue hal-03793956v1
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes Remi Helleboid,Denis Rideau,Isobel Nicholson,Jeremy Grebot,Bastien Mamdyet al. Journal of Physics D: Applied Physics, 2022, 55, pp.505102. ⟨10.1088/1361-6463/ac9b6a⟩ Article dans une revue hal-03828806v1
Spectral Simulation of Heat Transfer Across Polytype Interfaces Nadjib Izitounene,Ngoc Duc Le,Brice Davier,Philippe Dollfus,Lorenzo Paulattoet al. Crystal Research and Technology, 2022, 57 (9), pp.2200017. ⟨10.1002/crat.202200017⟩ Article dans une revue hal-03864401v1
Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation N. Le,Brice Davier,N. Izitounene,Philippe Dollfus,J. Saint-Martin Journal of Computational Electronics, 2022, 21 (4), pp.744-755. ⟨10.1007/s10825-022-01885-x⟩ Article dans une revue hal-03859201v1
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines Rémi Helleboid,Denis Rideau,Jeremy Grebot,Isobel Nicholson,Norbert Moussyet al. Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩ Article dans une revue hal-03793952v1
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation Philippe Dollfus,Jérôme Saint-Martin,T. Cazimajou,R. Helleboid,A. Pilottoet al. Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩ Article dans une revue hal-03793955v1
Revisiting thermal conductivity and interface conductance at the nanoscale Brice Davier,Philippe Dollfus,N.D. Le,S. Volz,J. Shiomiet al. International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩ Article dans une revue hal-03859204v1
A new mixed hardening methodology applied to a 28 nm FDSOI 32-bits DSP subjected to gamma radiation Alejandro Ureña-Acuña,Jean-Marc Armani,Mariem Slimani,Ivan Miro-Panades,Philippe Dollfus Microelectronics Reliability, 2021, 126, pp.114397. ⟨10.1016/j.microrel.2021.114397⟩ Article dans une revue cea-04129158v1
Revisiting thermal conductivity and interface conductance at the nanoscale Brice Davier,Philippe Dollfus,N D Le,Sebastian Volz,J Shiomiet al. International Journal of Heat and Mass Transfer, 2021, 183, ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩ Article dans une revue hal-03868857v1
1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices Markus Muller,Philippe Dollfus,Michael Schroter IEEE Transactions on Electron Devices, 2021, 68 (3), pp.1221-1227. ⟨10.1109/TED.2021.3051552⟩ Article dans une revue hal-03332527v1
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions D. Logoteta,J. Cao,Marco G. Pala,P. Dollfus,Y. Leeet al. Physical Review Research, 2020, 2 (4), ⟨10.1103/PhysRevResearch.2.043286⟩ Article dans une revue hal-03032703v1
Electron transport properties of graphene nanoribbons with Gaussian deformation Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus Physical Review B, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩ Article dans une revue hal-02935227v1
A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect Demetrio Logoteta,Marco Pala,Jean Choukroun,Philippe Dollfus,Giuseppe Iannaccone IEEE Electron Device Letters, 2019, 40 (9), pp.1550-1553. ⟨10.1109/LED.2019.2928131⟩ Article dans une revue hal-02350929v1
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions Jean Choukroun,Marco Pala,Shiang Fang,Efthimios Kaxiras,Philippe Dollfus Nanotechnology, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩ Article dans une revue hal-02350992v1
Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation Brice Davier,Jérôme Larroque,Philippe Dollfus,Laurent Chaput,Sebastian Volzet al. Journal of Physics: Condensed Matter, In press, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩ Article dans une revue hal-01906247v1
High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz Materials Today: Proceedings, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩ Article dans une revue hal-01927617v1
Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models Jérôme Larroque,Philippe Dollfus,Jérôme Saint-Martin Journal of Applied Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩ Article dans une revue hal-01906686v1
High thermoelectric performance of graphite nanofibers Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz Nanoscale, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩ Article dans une revue hal-01909447v1
Ab initio based calculations of the thermal conductivity at the micron scale Laurent Chaput,Jérôme Larroque,Philippe Dollfus,Jérôme Saint-Martin,David Lacroix Applied Physics Letters, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩ Article dans une revue hal-01689364v1
Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩ Article dans une revue hal-01631292v1
Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors Vincent Talbo,Jérôme Saint-Martin,Sylvie Galdin-Retailleau,Philippe Dollfus Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩ Article dans une revue hal-01906689v1
Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation Olivier Pluchery,Louis Caillard,Philippe Dollfus,Yves J Chabal Journal of Physical Chemistry B, 2017, 122 (2), pp.897 - 903. ⟨10.1021/acs.jpcb.7b06979⟩ Article dans une revue hal-01795635v1
Third nearest neighbor parameterized tight binding model for graphene nano-ribbons Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz AIP Advances, 2017, 7 (7), ⟨10.1063/1.4994771⟩ Article dans une revue hal-01631290v1
Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons T. Nghiem,Jérôme Saint-Martin,P. Dollfus Journal of Computational Electronics, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩ Article dans une revue hal-01906694v1
Special Issue on Inelastic Scattering Introduction Marc Bescond,Philippe Dollfus Journal of Computational Electronics, 2016, 15 (4, SI), pp.1119-1122. ⟨10.1007/s10825-016-0917-z⟩ Article dans une revue hal-01434945v1
Proposal for a graphene-based all-spin logic gate Li Su,Weisheng Zhao,Yue Zhang,Damien S Querlioz,Youguang Zhanget al. Applied Physics Letters, 2015 Article dans une revue hal-02448374v1
High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus Nanotechnology, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩ Article dans une revue hal-01909496v1
Enhanced Seebeck effect in graphene devices by strain and doping engineering M. Chung Nguyen,V. Hung Nguyen,Huy-Viet Nguyen,Jérôme Saint-Martin,P. Dollfus Physica E: Low-dimensional Systems and Nanostructures, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩ Article dans une revue hal-01909501v1
Thermoelectric effects in graphene nanostructures Philippe Dollfus,Viet Hung Nguyen,Jérôme Saint-Martin Journal of Physics: Condensed Matter, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩ Article dans une revue hal-01909508v1
Strain-induced conduction gap in vertical devices made of misoriented graphene layers V Hung Nguyen,Huy-Viet Nguyen,Jérôme Saint-Martin,P. Dollfus Nanotechnology, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩ Article dans une revue hal-01909504v1
Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus Semiconductor Science and Technology, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩ Article dans une revue hal-01909498v1
New insights into self-heating in double-gate transistors by solving Boltzmann transport equations T. Thu Trang Nghiêm,Jérôme Saint-Martin,P. Dollfus Journal of Applied Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩ Article dans une revue hal-01906713v1
Enhanced thermoelectric figure of merit in vertical graphene junctions Viet-Hung Nguyen,Mai Chung Nguyen,Huy-Viet Nguyen,Jérôme Saint-Martin,Philippe Dollfus Applied Physics Letters, 2014, 105 (13), ⟨10.1063/1.4896915⟩ Article dans une revue hal-01910202v1
The interplay between the Aharonov-Bohm interference and parity selective tunneling in graphene nanoribbon rings V Hung Nguyen,Y-M Niquet,P. Dollfus Journal of Physics: Condensed Matter, 2014, 26 (20), pp.205301. ⟨10.1088/0953-8984/26/20/205301⟩ Article dans une revue hal-02137931v1
A Klein-tunneling transistor with ballistic graphene Quentin Wilmart,Salim Berrada,David Torrin,V Hung Nguyen,Gwendal Fèveet al. 2D Materials, 2014, 1 (1), pp.011006. ⟨10.1088/2053-1583/1/1/011006⟩ Article dans une revue hal-01310632v1
On the non-linear effects in graphene devices Viet Hung Nguyen,Alfonso Alarcón,Salim Berrada,Van Nam Do,Jérôme Saint-Martinet al. Journal of Physics D: Applied Physics, 2014, 47 (9), pp.094007 Article dans une revue hal-01951903v1
Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus Applied Physics Letters, 2014, 105 (7), ⟨10.1063/1.4893697⟩ Article dans une revue hal-01910199v1
Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices Damien Querlioz,Olivier Bichler,Philippe Dollfus,Christian Gamrat IEEE Transactions on Nanotechnology, 2013, 12 (3), pp.288 - 295. ⟨10.1109/TNANO.2013.2250995⟩ Article dans une revue hal-01826840v1
Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications Ming Shi,Jérôme Saint-Martin,Arnaud Bournel,Damien Querlioz,Nicolas Wichmannet al. Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩ Article dans une revue istex hal-01910206v1
Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors Alfonso Alarcón,Viet-Hung Nguyen,Salim Berrada,Damien Querlioz,Jérôme Saint-Martinet al. IEEE Transactions on Electron Devices, 2013, 60 (3), pp.985-991 Article dans une revue hal-01951940v1
Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor Ming Shi,Jérôme Saint-Martin,Arnaud Bournel,Damien Querlioz,Philippe Dollfuset al. Journal of Nanoscience and Nanotechnology, 2013, 13 (2), pp.771-775 Article dans une revue hal-01951943v1
Multiscale simulation of carbon nanotube transistors Cristell Maneux,Sébastien Fregonese,Thomas Zimmer,Sylvie Retailleau,Huu Nha Nguyenet al. Solid-State Electronics, 2013, 89, pp.26-67. ⟨10.1016/j.sse.2013.06.013⟩ Article dans une revue istex hal-00906950v1
Graphene nanomesh transistor with high on/off ratio and good saturation behavior Salim Berrada,Viet Hung Nguyen,Damien Querlioz,Jérôme Saint-Martin,Alfonso Alarcónet al. Applied Physics Letters, 2013, 103 (18), ⟨10.1063/1.4828496⟩ Article dans une revue hal-01910209v1
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance Viet Hung Nguyen,Jérôme Saint-Martin,Damien Querlioz,Fulvio Mazzamuto,Arnaud Bournelet al. Journal of Computational Electronics, 2013, 12 (2), pp.85-93 Article dans une revue hal-01951935v1
Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor Minghua Shi,J. Saint-Martin,A. Bournel,D. Querlioz,P. Dollfuset al. Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩ Article dans une revue hal-00795954v1
Graphene nanomesh transistor with high on/off ratio and good saturation behavior Salim Berrada,Viet Hung Nguyen,Damien Querlioz,Jérôme Saint-Martin,Alfonso Alarcónet al. Applied Physics Letters, 2013, 103 (18), pp.183509 Article dans une revue hal-01951910v1
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons F. Mazzamuto,V. Hung Nguyen,Y. Apertet,C. Caër,C. Chassatet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩ Article dans une revue hal-01909440v1
Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study Fulvio Mazzamuto,Jérôme Saint-Martin,Arnaud Bournel,P. Dollfus,Alexandre Archambaultet al. Journal of Physics: Conference Series, 2009, 193 (1), pp.012015. ⟨10.1088/1742-6596/193/1/012015⟩ Article dans une revue hal-00574368v1
Multiscale simulation of carbon nanotube devices Christophe Adessi,R. Avriller,A. Bournel,Xavier Blase,H. Cazin d'Honincthunet al. Comptes Rendus. Physique, 2009, 10 (4), pp.305-319. ⟨10.1016/j.crhy.2009.05.004⟩ Article dans une revue istex hal-00400169v1
Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder D. Querlioz,Y. Apertet,A. Valentin,K. Huet,A. Bournelet al. Applied Physics Letters, 2008, 92 (4), pp.042108. ⟨10.1063/1.2838354⟩ Article dans une revue hal-02452618v1
Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design Sebastien Fregonese,Hughes Cazin d'Honincthun,Johnny Goguet,Cristell Maneux,Thomas Zimmeret al. IEEE Transactions on Electron Devices, 2008, 55 (6), pp.1317-1326 Article dans une revue hal-00287142v1
Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors K. Huet,D. Querlioz,W. Chaisantikulwat,J. Saint-Martin,A. Bournelet al. Journal of Applied Physics, 2008, 104 (4), pp.044504-1-7 Article dans une revue hal-00391733v1
On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation D. Querlioz,Jérôme Saint-Martin,K. Huet,A. Bournel,V. Aubry-Fortunaet al. IEEE Transactions on Electron Devices, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩ Article dans une revue hal-01909433v1
Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation A. Bournel,V. Aubry-Fortuna,J. Saint-Martin,P. Dollfus Solid-State Electronics, 2007, 51 (4), pp.543-550. ⟨10.1016/j.sse.2007.02.010⟩ Article dans une revue istex hal-02452609v1
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas Jérôme Saint-Martin,A. Bournel,F Monsef,C. Chassat,P. Dollfus Semiconductor Science and Technology, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩ Article dans une revue istex hal-01909484v1
Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation V. Aubry-Fortuna,P. Dollfus,S. Galdin-Retailleau Solid-State Electronics, 2005, 48 (8), pp.1320-1329 Article dans une revue hal-00012102v1
On the Ballistic Transport in Nanometer-Scaled DG MOSFETs Jérôme Saint-Martin,A. Bournel,P. Dollfus IEEE Transactions on Electron Devices, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩ Article dans une revue hal-01909466v1
Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells A. Bournel,P. Dollfus,E. Cassan,P. Hesto Applied Physics Letters, 2000, 77 (15), pp.2346-2348. ⟨10.1063/1.1316771⟩ Article dans une revue hal-02452029v1
Modelling of gate-induced spin precession in a striped channel high electron mobility transistor A. Bournel,P. Dollfus,S Galdin,F.-X Musalem,P. Hesto Solid State Communications, 1997, 104 (2), pp.85-89. ⟨10.1016/S0038-1098(97)00278-0⟩ Article dans une revue istex hal-02451938v1
Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length P. Dollfus,C. Bru,P. Hesto Journal of Applied Physics, 1993, 73 (2), pp.804-812. ⟨10.1063/1.353341⟩ Article dans une revue hal-01977076v1
Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects P. Dollfus,P. Hesto,S. Galdin,C. Brisset Journal de Physique III, 1993, 3 (9), pp.1719-1728. ⟨10.1051/jp3:1993232⟩ Article dans une revue istex jpa-00249033v1
High frequency analysis of fast devices using small-signal Monte Carlo simulations : application to a 0.1 μm-gate MODFET P. Dollfus,S. Galdin,C. Brisset,P. Hesto Journal de Physique III, 1993, 3 (9), pp.1713-1718. ⟨10.1051/jp3:1993231⟩ Article dans une revue istex jpa-00249032v1
Dimensionnement et performances potentielles des MISFET à hétérojonction P. Dollfus,M. Mouis,R. Castagné Revue de Physique Appliquée, 1989, 24 (1), pp.65-69. ⟨10.1051/rphysap:0198900240106500⟩ Article dans une revue istex jpa-00246030v1
Etude Monte-Carlo du transport dans un gaz d'électrons bidimensionnel dégénéré M. Mouis,P. Dollfus,R. Castagné Revue de Physique Appliquée, 1989, 24 (2), pp.183-188. ⟨10.1051/rphysap:01989002402018300⟩ Article dans une revue istex jpa-00246040v1
REAL-SPACE TRANSFER IN HETEROJUNCTION FET's : MONTE-CARLO SIMULATION AND ANALYTICAL MODEL M. Mouis,F. Paviet-Salomon,P. Dollfus,R. Castagné Journal de Physique Colloques, 1988, 49 (C4), pp.C4-567-C4-570. ⟨10.1051/jphyscol:19884119⟩ Article dans une revue istex jpa-00227854v1
Etude par simulation Monte Carlo des effets induits dans un TEGFET par le transfert spatial M. Mouis,P. Dollfus,B. Mougel,J.-F. Pône,R. Castagné Revue de Physique Appliquée, 1987, 22 (11), pp.1495-1500. ⟨10.1051/rphysap:0198700220110149500⟩ Article dans une revue istex jpa-00245702v1

Communication dans un congrès (27)

Multi-Band Model Hamiltonian for Tunnel Devices with Van Der Waals Heterojunctions Owen Loison,Adel M'Foukh,Davide Romanin,Marco Pala,Philippe Dollfus 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186327⟩ Communication dans un congrès hal-05411859v1
Self-Consistent Advection-Diffusion Monte Carlo Simulation of Quenching in Single-Photon Avalanche Diodes Rémi Helleboid,Kenzo Morel-Handa,Isobel Nicholson,Gabriel Mugny,Denis Rideauet al. International Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States Communication dans un congrès hal-05418456v1
Improved Stochastic SPAD Quenching Model Including Build-Up Field Effect Rémi Helleboid,Samuel Dahan,Kenzo Morel-Handa,Gabriel Mugny,Isobel Nicholsonet al. 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186367⟩ Communication dans un congrès hal-05411841v1
Phonon Thermal Transport Along the Chain Direction of Crystalline Polyethylene Shouhang Li,Philippe Dollfus,Jérôme Saint-Martin,D. Romanin International Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States Communication dans un congrès hal-05418477v1
Monte Carlo simulation of ThermoElectric Properties in Nanostructures Mohammad Ghanem,Philippe Dollfus,Jérôme Saint-Martin Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece Communication dans un congrès hal-04740322v1
Coupling ab-initio Description and Monte Carlo Simulation to Capture the Transport of Hot Carriers Mohammad Ghanem,Jelena Sjakste,Raja Sen,Alessandro Pilotto,Philippe Dollfuset al. Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece Communication dans un congrès hal-04740315v1
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination Alessandro Pilotto,Adel M’foukh,Philippe Dollfus,Jérôme Saint-Martin,Marco Pala 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.301-304, ⟨10.23919/SISPAD57422.2023.10319610⟩ Communication dans un congrès hal-04333397v1
Automatic optimization of doping profile for high performance Single-Photon Avalanche Diodes Helleboid Rémi,Jérôme Saint-Martin,Marco Pala,Philippe Dollfus,Rideau Deniset al. International Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain Communication dans un congrès hal-04740345v1
Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability Denis Rideau,Y. Oussaiti,J. Grebot,R. Helleboid,A. Lopezet al. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States Communication dans un congrès hal-03374008v1
Full Band Monte Carlo simulation of phonon transfer at interfaces N.D. Le,B. Davier,P. Dollfus,Marco G. Pala,A. Bournelet al. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩ Communication dans un congrès hal-03029928v1
Nanoscale heat transfer via Ab-Initio Monte Carlo simulation Brice Davier,Jérôme Larroque,Philippe Dollfus,Laurent Chaput,Sebastian Volzet al. 20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States Communication dans un congrès hal-02187168v1
Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures B. Davier,J. Larroque,Philippe Dollfus,Laurent Chaput,S. Volzet al. Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland Communication dans un congrès hal-01951979v1
High performance WTe&lt;inf&gt;2&lt;/inf&gt;-MoS&lt;inf&gt;2&lt;/inf&gt;in-plane heterojunction Tunnel Field Effect Transistors Marco G. Pala,Jean Choukroun,Shiang Fang,Efthimios Kaxiras,Philippe Dollfus 48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩ Communication dans un congrès hal-02351006v1
Thermoelectric properties of Quantum Dot-based devices Vincent Talbo,Jérôme Saint-Martin,Philippe Dollfus IEEE NANO 2018, Jul 2018, Cork, Ireland Communication dans un congrès hal-01952001v1
Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach B. Davier,J. Larroque,P. Dollfus,Jérôme Saint-Martin High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam Communication dans un congrès hal-01952013v1
Enhanced Seebeck effect in graphene devices by strain and doping engineering Mai-Chung Nguyen,Viet-Hung Nguyen,Huy-Viet Nguyen,Jérôme Saint-Martin,Philippe Dollfus High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam Communication dans un congrès hal-01952016v1
Full-Band modelling of phonons in polytype Ge and Si J. Larroque,P. Dollfus,Jérôme Saint-Martin 20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007 Communication dans un congrès hal-01951995v1
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes Y. Oussaiti,D. Rideau,J.R. Manouvrier,V. Quenette,H. Wehbe-Alauseet al. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.145-148, ⟨10.23919/SISPAD49475.2020.9241648⟩ Communication dans un congrès hal-03029924v1
Bioinspired networks with nanoscale memristive devices that combine the unsupervised and supervised learning approaches D. Querlioz,W. S Zhao,P. Dollfus,J.-O Klein,O. Bichleret al. 2012 IEEE/ACM International Symposium on Nanoscale Architectures NANOARCH '12, Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765528⟩ Communication dans un congrès hal-01839543v1
Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation Minghua Shi,J. Saint-Martin,A. Bournel,D. Querlioz,P. Dollfuset al. 37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩ Communication dans un congrès hal-00799795v1
Learning with memristive devices: How should we model their behavior? Damien Querlioz,Philippe Dollfus,Olivier Bichler,Christian Gamrat 2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jun 2011, San Diego, United States. ⟨10.1109/NANOARCH.2011.5941497⟩ Communication dans un congrès hal-01827056v1
Plasmonic noise in Si and InGaAs semiconductor nanolayers J. Pousset,J-F Millithaler,L. Reggiani,G. Sabatini,C. Palermoet al. 16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), L. Varani, 2009, Montpellier, France. pp.012091, ⟨10.1088/1742-6596/193/1/012091⟩ Communication dans un congrès hal-02443121v1
Field Dependence of Electron Velocity in High-Purity Germanium at Cryogenic Temperatures V. Aubry Fortuna,A. Broniatowski,P. Dollfus THE THIRTEENTH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS--LTD13, Jul 2009, Stanford, United States. pp.639-642, ⟨10.1063/1.3292422⟩ Communication dans un congrès in2p3-00695301v1
Analyse de la mobilité dans les transistors nanométriques J. Pousset,J.-F. Millithaler,C. Palermo,L. Varani,P. Dollfus Journées Nationales du Réseau Doctorale en Microélectronique, 2006, Rennes, France Communication dans un congrès hal-02442777v1
Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach D. Querlioz,J. Saint-Martin,V.-N. Do,A. Bournel,P. Dollfus 2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩ Communication dans un congrès hal-01827054v1
Étude de la mobilité effective dans les DG MOSFET quasi-balistiques K. Huet,J. Saint-Martin,A. Bournel,G. Ghibaudo,P. Dollfuset al. xxxx, 2006, Grenoble, France. pp.XX Communication dans un congrès hal-00148265v1
Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs Jérôme Saint-Martin,Damien Querlioz,Arnaud Bournel,Philippe Dollfus 2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩ Communication dans un congrès hal-01827057v1

Poster de conférence (1)

Thermal Conductivity of Single Polymer Chains from First-principles Including Quantum and Anharmonic Effects Shouhang Li,Adel M'Foukh,Philippe Dollfus,Jérôme Saint-Martin,D. Romanin JOURNÉES PLÉNIIÈRES DU GDR NAME 2024, Nov 2024, Lille, France Poster de conférence hal-04790424v1