Quentin Rafhay

Publications

Article dans une revue (52)

Simulation of yttria hot cathode and radiative emissivity impact on its performances and the work function measurement Audrey Mayrat,Quentin Rafhay,Claire Verrier,Jean-Luc Deschanvres Vacuum, 2025, 239, pp.114363. ⟨10.1016/j.vacuum.2025.114363⟩ Article dans une revue hal-05372636v2
A current and LFN method for individually assessing layer quality in III-V multi-junctions Alexandra Diaz,Corentin Jouanneau,Thomas Bidaud,Maxime Darnon,Gwenaelle Hamonet al. Fluctuation and Noise Letters, 2025, ⟨10.1142/S0219477525400115⟩ Article dans une revue hal-05247239v1
Assessing the contact quality of Si p-n diodes through series resistance noise characterization Alexandra Diaz,Chloe Wulles,Maeva Franco,Antoine Albouy,Patrick Leducet al. Fluctuation and Noise Letters, 2025, ⟨10.1142/S0219477525400127⟩ Article dans une revue hal-05406753v1
Simulation of Carrier Injection Pathways in Axial GaN Nanowire MicroLEDs Amadéo Vibert,Mehdi Daanoune,Quentin Rafhay,Jean‐yves Duboz Advanced Theory and Simulations, 2025, pp.e01183. ⟨10.1002/adts.202501183⟩ Article dans une revue hal-05459077v1
Probing hidden conduction mechanisms in diced silicon solar cells by low frequency noise analysis Chloé Wulles,Quentin Rafhay,Thibaut Desrues,Anne Kaminski,Christoforos Theodorou Solar Energy Materials and Solar Cells, 2023, 256, pp.112344. ⟨10.1016/j.solmat.2023.112344⟩ Article dans une revue hal-04305470v1
Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices Flore Boyer,Karen Dabertrand,Nicolas Bernier,Christophe Jany,Patrice Gergaudet al. Materials Science in Semiconductor Processing, 2023, 154, pp.107199. ⟨10.1016/j.mssp.2022.107199⟩ Article dans une revue hal-04742893v1
Front SiON/TCO Stacks Development for Double-Side Poly-Si/SiO X Passivated Contacts Solar Cells Charles Seron,Thibaut Desrues,Christine Denis,Raphael Cabal,Frederic Jayet al. IEEE Journal of Photovoltaics, 2023, 13 (1), pp.33-39. ⟨10.1109/JPHOTOV.2022.3221556⟩ Article dans une revue hal-04742915v1
Passivating Silicon Tunnel Diode for Perovskite on Silicon Nip Tandem Solar Cells Baptiste Marteau,Thibaut Desrues,Quentin Rafhay,Anne Kaminski,Sébastien Dubois Energies, 2023, 16 (11), pp.4346. ⟨10.3390/en16114346⟩ Article dans une revue hal-04742929v1
Universality of trap-induced mobility fluctuations between 1/f noise and Random Telegraph Noise in nanoscale FD-SOI MOSFETs Owen Gauthier,Sébastien Haendler,Quentin Rafhay,Christoforos Theodorou Applied Physics Letters, 2023, 122 (23), ⟨10.1063/5.0152734⟩ Article dans une revue hal-04305435v1
1S1R optimization for high‐frequency inference on binarized spiking neural networks Joel Minguet Lopez,Quentin Rafhay,Manon Dampfhoffer,Lucas Reganaz,Niccolo Castellaniet al. Advanced Electronic Materials, 2022, 2022 (8), pp.2200323. ⟨10.1002/aelm.202200323⟩ Article dans une revue cea-03707409v1
Simulation study of high-speed Ge photodetector dark and light current degradation Balraj Arunachalam,Quentin Rafhay,David Roy,Anne Kaminski-Cachopo IEEE Transactions on Device and Materials Reliability, 2022, pp.1-1. ⟨10.1109/TDMR.2022.3185671⟩ Article dans une revue hal-03765765v1
Parasitic oscillation in the low-frequency noise characterization of solar cells Chloé Wulles,Quentin Rafhay,Thibaut Desrues,Anne Kaminski,Christoforos Theodorou Solid-State Electronics, 2022, 194, pp.108327. ⟨10.1016/j.sse.2022.108327⟩ Article dans une revue hal-03876783v1
Hydrogenation of sputtered ZnO:Al layers for double side poly-Si/SiOx solar cells Charles Seron,Thibaut Desrues,Frederic Jay,Adeline Lanterne,Frank Torregrosaet al. EPJ Photovoltaics, 2022, 13, pp.8. ⟨10.1051/epjpv/2022005⟩ Article dans une revue hal-03649761v1
Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data Lucas Reganaz,Eduardo Esmanhotto,Nazim Ait Abdelkader,Joel Minguet Lopez,Niccolo Castellaniet al. Physica Status Solidi A (applications and materials science), 2022, 219 (13), pp.2100753. ⟨10.1002/pssa.202100753⟩ Article dans une revue hal-03840622v1
Enhanced statistical detection of random telegraph noise in frequency and time domain Owen Gauthier,Sébastien Haendler,Patrick Scheer,Alexandre Vernhet,Quentin Rafhayet al. Solid-State Electronics, 2022, 194, pp.108320. ⟨10.1016/j.sse.2022.108320⟩ Article dans une revue hal-03762370v1
Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology F. Boyer,K. Dabertrand,P. Gergaud,M. Grégoire,Quentin Rafhayet al. Materials Science in Semiconductor Processing, 2021, 128, pp.105731. ⟨10.1016/j.mssp.2021.105731⟩ Article dans une revue hal-04742836v1
Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities Klaasjan Maas,Edouard Villepreux,David Cooper,Carmen Jimenez,Hervé Rousselet al. Journal of Materials Chemistry C, 2020, 8 (2), pp.464-472. ⟨10.1039/c9tc03972d⟩ Article dans une revue hal-02428216v1
Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers Flore Boyer,Patrice Gergaud,Karen Dabertrand,Denis Mariolle,Christophe Janyet al. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (1), pp.012209. ⟨10.1116/1.5128554⟩ Article dans une revue hal-04743063v1
Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic–Electronic Conductor Klaasjan Maas,Edouard Villepreux,David Cooper,Eduardo Salas-Colera,Juan Rubio- Zuazoet al. Advanced Functional Materials, 2020, 30 (17), pp.1909942. ⟨10.1002/adfm.201909942⟩ Article dans une revue hal-02994852v1
Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III–V Devices on a 300-mm Platform F. Boyer,K. Dabertrand,C. Jany,P. Gergaud,N. Coudurieret al. IEEE Transactions on Electron Devices, 2020, 67 (6), pp.2495-2502. ⟨10.1109/TED.2020.2985766⟩ Article dans une revue hal-04743053v1
Reliability Characterization and Modelling of High Speed Ge Photodetectors F. Sy,Q. Rafhay,Julien Poette,G. Grosa,G. Beylieret al. IEEE Transactions on Device and Materials Reliability, 2019, pp.1-1. ⟨10.1109/TDMR.2019.2945996⟩ Article dans une revue hal-02321345v1
Reliability Characterization and Modeling of High Speed Ge Photodetectors Fatoumata Sy,Quentin Rafhay,J. Poëtte,Gregory Grosa,Gaelle Beylieret al. IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.688-695. ⟨10.1109/TDMR.2019.2945996⟩ Article dans une revue hal-04743074v1
Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation Diego Alfaro Robayo,Gilbert Sassine,Quentin Rafhay,Gérard Ghibaudo,Gabriel Molaset al. IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2911661⟩ Article dans une revue hal-02126884v1
Integration of LaMnO 3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD Raquel Rodriguez-Lamas,Dolors Pla,Odette Chaix-Pluchery,Benjamin Meunier,Fabrice Wilhelmet al. Beilstein Journal of Nanotechnology, 2019, 10, pp.389-398. ⟨10.3762/bjnano.10.38⟩ Article dans une revue hal-02012546v1
Effects of the pH on the Formation and Doping Mechanisms of ZnO Nanowires Using Aluminum Nitrate and Ammonia Claire Verrier,Estelle Appert,Odette Chaix-Pluchery,Laetitia Rapenne,Quentin Rafhayet al. Inorganic Chemistry, 2017, 56 (21), pp.13111-13122. ⟨10.1021/acs.inorgchem.7b01916⟩ Article dans une revue hal-01758854v1
Tunable Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminum Nitrate Claire Verrier,Estelle Appert,Odette Chaix-Pluchery,Laetitia Rapenne,Quentin Rafhayet al. Journal of Physical Chemistry C, 2017, 121 (6), pp.3573-3583. ⟨10.1021/acs.jpcc.6b11104⟩ Article dans une revue hal-01758853v1
Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations Vladimir Maryasin,Davide Bucci,Quentin Rafhay,Federico Panicco,Jérôme Michallonet al. Solar Energy Materials and Solar Cells, 2017, 172, pp.314-323. ⟨10.1016/j.solmat.2017.07.041⟩ Article dans une revue hal-01959103v1
New Y -function based MOSFET parameter extraction method from weak to strong inversion range J.B. Henry,Q. Rafhay,A. Cros,G. Ghibaudo Solid-State Electronics, 2016, 123, pp.84-88. ⟨10.1016/j.sse.2016.06.004⟩ Article dans une revue istex hal-01947687v1
Resistive memory variability: A simplified trap-assisted tunneling model Daniele Garbin,Elisa Vianello,Quentin Rafhay,Mourad Azzaz,Philippe Candelieret al. Solid-State Electronics, 2016, 115, pp.126-132. ⟨10.1016/j.sse.2015.09.004⟩ Article dans une revue istex hal-01947671v1
Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit Gaspard Hiblot,Quentin Rafhay,Frédéric Boeuf,Gérard Ghibaudo IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1375-1382. ⟨10.1109/TED.2015.2406116⟩ Article dans une revue hal-01947637v1
Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals Gaspard Hiblot,Quentin Rafhay,Frédéric Boeuf,Gérard Ghibaudo IEEE Transactions on Electron Devices, 2015, 62 (3), pp.972-979. ⟨10.1109/TED.2015.2388788⟩ Article dans une revue hal-01947634v1
Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials G. Hiblot,Q. Rafhay,F. Boeuf,G. Ghibaudo Solid-State Electronics, 2015, 111, pp.188-195. ⟨10.1016/j.sse.2015.06.008⟩ Article dans une revue istex hal-01947653v1
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks Daniele Garbin,Elisa Vianello,Olivier Bichler,Quentin Rafhay,Christian Gamratet al. IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2494-2501. ⟨10.1109/TED.2015.2440102⟩ Article dans une revue hal-01947647v1
Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity Gaspard Hiblot,Gabriel Mugny,Quentin Rafhay,Frédéric Boeuf,Gérard Ghibaudo IEEE Transactions on Nanotechnology, 2015, 14 (4), pp.768-775. ⟨10.1109/TNANO.2015.2444653⟩ Article dans une revue hal-01947645v1
Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology G. Hiblot,J. Lacord,M. Akbal,Q. Rafhay,F. Boeufet al. Solid-State Electronics, 2015, 107, pp.1-7. ⟨10.1016/j.sse.2015.02.001⟩ Article dans une revue istex hal-01947635v1
Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices Gaspard Hiblot,Tapas Dutta,Quentin Rafhay,Joris Lacord,Madjid Akbalet al. IEEE Transactions on Electron Devices, 2015, 62 (1), pp.28-35. ⟨10.1109/TED.2014.2368395⟩ Article dans une revue hal-01947631v1
Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire G. Hiblot,Q. Rafhay,F. Boeuf,G. Ghibaudo Solid-State Electronics, 2014, 100, pp.71-78. ⟨10.1016/j.sse.2014.07.001⟩ Article dans une revue istex hal-01947623v1
Analytical relationship between subthreshold swing of thermionic and tunnelling currents G. Hiblot,Quentin Rafhay,F. Boeuf,G. Ghibaudo Electronics Letters, 2014, 50 (23), pp.1745-1747. ⟨10.1049/el.2014.3206⟩ Article dans une revue hal-01959261v1
Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes T. Dutta,Q. Rafhay,R. Clerc,J. Lacord,S. Monfrayet al. Solid-State Electronics, 2013, 88, pp.43-48. ⟨10.1016/j.sse.2013.04.007⟩ Article dans une revue istex hal-01002086v1
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs B. Sklenard,P. Batude,Q. Rafhay,I. Martin-Bragado,C.Q. Xuet al. Solid-State Electronics, 2013, 88, pp.9-14. ⟨10.1016/j.sse.2013.04.018⟩ Article dans une revue istex hal-01002090v1
New parameter extraction method based on split C-V measurements in FDSOI MOSFETs I. Ben Akkez,A. Cros,C. Fenouillet-Beranger,F. Boeuf,Q. Rafhayet al. Solid-State Electronics, 2013, 84, pp.142-146. ⟨10.1016/j.sse.2013.02.011⟩ Article dans une revue istex hal-01002112v1
Revisited approach for the characterization of Gate Induced Drain Leakage Quentin Rafhay,Cuiqin Xu,Perrine Batude,Mireille Mouis,Maud Vinetet al. Solid-State Electronics, 2012, 71, pp.37-41. ⟨10.1109/ULIS.2011.5757994⟩ Article dans une revue hal-01959351v1
An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering Alban Zaka,Pierpaolo Palestri,Quentin Rafhay,Raphael Clerc,Matteo Iellinaet al. IEEE Transactions on Electron Devices, 2012, 59 (4), pp.983-993 Article dans une revue hal-01959366v1
Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects A. Zaka,J. Singer,E. Dornel,D. Garetto,D. Rideauet al. Solid-State Electronics, 2011, 63 (1), pp.158-162. ⟨10.1016/j.sse.2011.05.017⟩ Article dans une revue istex hal-01959389v1
On the Accuracy of Current TCAD Hot Carrier Injection Models in Nanoscale Devices A. Zaka,Q. Rafhay,M. Iellina,P. Palestri,R. Clercet al. Solid-State Electronics, 2010, 54 (12), pp.1669-1674 Article dans une revue hal-00596340v1
Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells M. Florian Beug,Quentin Rafhay,Michiel van Duuren,Russell Duane IEEE Transactions on Electron Devices, 2010, 57 (6), pp.1253-1260 Article dans une revue hal-01959422v1
Impact of Channel Orientation on Ballistic Current of nDGFETs with Alternative Channel Materials Q. Rafhay,R. Clerc,M. Ferrier,G. Pananakakis,G. Ghibaudo Solid-State Electronics, 2008, 52 (Issue 4), pp.540-547 Article dans une revue hal-00391540v1
Semi-analytical modeling of short channel effects in Si and Ge symmetrical double-gate MOSFETs A. Tsormpatzoglou,C. Dimitriadis,R. Clerc,Q. Rafhay,G. Pananakakiset al. IEEE Transactions on Electron Devices, 2008, 54 (8), pp.1943-1946 Article dans une revue hal-00392897v1
Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs Q. Rafhay,R. Clerc,G. Ghibaudo,G. Pananakakis Solid-State Electronics, 2008, 52 (Issue 10), pp.1474-1481 Article dans une revue hal-00391582v1
Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs M. Ferrier,Raphael Clerc,L. Lucci,Quentin Rafhay,Georges Pananakakiset al. IEEE Transactions on Nanotechnology, 2007, 6 (6), pp.613-621 Article dans une revue hal-01957720v1
Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods Quentin Rafhay,M. Florian Beug,Russell Duane Solid-State Electronics, 2007, 51 (4), pp.585-592 Article dans une revue hal-01959440v1
Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor Russell Duane,Quentin Rafhay,M. Florian Beug,Michiel van Duuren IEEE Electron Device Letters, 2007, 28 (5), pp.440-442 Article dans une revue hal-01959438v1

Communication dans un congrès (76)

Experimental Evidence of Light Source Contribution in the Noise of Optoelectronic Devices Under Illumination Alexandra Diaz,Chloé Wulles,Christoforos Theodorou,Anne Kaminski,Quentin Rafhay 2023 International Conference on Noise and Fluctuations (ICNF), Oct 2023, Grenoble, France. pp.1-4, ⟨10.1109/ICNF57520.2023.10472759⟩ Communication dans un congrès hal-04742976v2
Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation Owen Gauthier,Sébastien Haendler,Quentin Rafhay,Christoforos Theodorou 2023 International Conference on Noise and Fluctuations (ICNF), Oct 2023, Grenoble, France. pp.1-4, ⟨10.1109/ICNF57520.2023.10472748⟩ Communication dans un congrès hal-04742951v1
Variability of Trap-induced Mobility Fluctuations in Nanoscale Bulk and FD-SOI MOSFETs Owen Gauthier,S. Haendler,Quentin Rafhay,Christoforos Theodorou 2023 International Electron Devices Meeting (IEDM), Dec 2023, San Francisco, United States. pp.1-4, ⟨10.1109/IEDM45741.2023.10413836⟩ Communication dans un congrès hal-04742936v1
Static and LFN/RTN Local and Global Variability Analysis Using an Addressable Array Test Structure Owen Gauthier,Sébastien Haendler,Ronan Beucher,Patrick Scheer,Quentin Rafhayet al. 2023 35th International Conference on Microelectronic Test Structure (ICMTS), Mar 2023, Tokyo, Japan. pp.1-6, ⟨10.1109/ICMTS55420.2023.10094087⟩ Communication dans un congrès hal-04305404v1
High temperature stability embedded ReRAM for 2x nm node and beyond G. Molas,G. Piccolboni,A. Bricalli,A. Verdy,I. Naotet al. 2022 IEEE International Memory Workshop (IMW), May 2022, Dresden, France. pp.1-4, ⟨10.1109/IMW52921.2022.9779293⟩ Communication dans un congrès hal-03840618v1
Simulation Study of the Origin of Ge High Speed Photodetector Degradation B. Arunachalam,Jean-Emmanuel Broquin,Quentin Rafhay,D. Roy,Anne Kaminski 2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-4, ⟨10.1109/IRPS46558.2021.9405211⟩ Communication dans un congrès hal-04742858v1
Insight in the resistance-change mechanisms in lanthanum nickelate memristors by a combination of diffraction and operando spectroscopic measurements Klaasjan Maas,Benjamin Meunier,G. R. Castro,J. Rubio-Zuazo,Laetitia Rapenneet al. E-MRS, May 2020, Strasbourg, France Communication dans un congrès hal-04509857v1
Nickel-based CMOS-compatible contacts on p-In 0.53 Ga 0.47 As for III-V / silicon hybrid lasers F. Boyer,K. Dabertrand,P. Gergaud,N. Coudurier,F. Nemouchiet al. 2020 IEEE International Interconnect Technology Conference (IITC), Oct 2020, San Jose, France. pp.121-123, ⟨10.1109/IITC47697.2020.9515625⟩ Communication dans un congrès hal-04742876v1
Ex-situ Hydrogenation of Sputtered Transparent Conductive Oxide layers by Plasma Immersion Ion Implantation Charles Seron,Thibaut Desrues,Camille Oliveau,Quentin Rafhay,Frank Torregrosaet al. 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC), Jun 2020, Calgary, France. pp.1304-1307, ⟨10.1109/PVSC45281.2020.9300693⟩ Communication dans un congrès hal-04743034v1
Tunable bipolar resistive switching in TiN/LaMnO3+δ/Pt heterostructures Raquel Rodriguez-Lamas,Dolors Pla,Odette Chaix-Pluchery,Laetitia Rapenne,Hervé Rousselet al. E-MRS 2019 Fall Meeting, Sep 2019, Varsovie, Poland Communication dans un congrès hal-04884081v1
Device in operation: microscopic aspects behind the resistance-change mechanism in lanthanum nickelate memristors Klassjan Maas,Eduardo Salas-Colera,Juan Rubio-Zuazo,German R. Castro,Edouard Villepreuxet al. SpLine Users’ meeting 2019, May 2019, Madrid, Spain Communication dans un congrès hal-04884306v1
Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration Antoine Veau,Thibaut Desrues,Audrey Morisset,Frank Torregrosa,Laurent Rouxet al. 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), Oct 2019, Fes, France. pp.040021, ⟨10.1063/1.5123848⟩ Communication dans un congrès hal-04743133v1
Memristive LaMnO3-based heterostructures for new valence change memories Raquel Rodriguez-Lamas,Dolors Pla,Odette Chaix-Pluchery,Laetitia Rapenne,Hervé Rousselet al. F2cΠ2 Joint Conference, Jul 2019, Lausanne, Switzerland Communication dans un congrès hal-04884201v1
Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers F. Boyer,C. Jany,J. da Fonseca,B. Szelag,V. Amalberget al. 2019 IEEE 16th International Conference on Group IV Photonics (GFP), Aug 2019, Singapore, Singapore. pp.1-2, ⟨10.1109/GROUP4.2019.8926115⟩ Communication dans un congrès hal-04743098v1
Characterization and Modelling of High Speed Ge Photodetectors Reliability F. Sy,Q. Rafhay,J. Poëtte,G. Grosa,C. Bessetet al. 2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.1-5, ⟨10.1109/IRPS.2019.8720483⟩ Communication dans un congrès hal-02274432v1
Tuning the performance of LaMnO3+d-based heterostructures for valence change memories Raquel Rodriguez-Lamas,Dolors Pla,Odette Chaix-Pluchery,Hervé Roussel,Laetitia Rapenneet al. 22nd International Conference on Solid State Ionics (SSI-22), Jun 2019, PyeongChang, South Korea Communication dans un congrès hal-02112219v1
How to tune the memristance of nickelate nanoionic devices by playing with their oxygen content Klaasjan Maas,Edouard Villepreux,Laetitia Rapenne,Eduardo Salas-Colera,David Cooperet al. E-MRS 2019 Fall Meeting, Sep 2019, Varsovie, Poland Communication dans un congrès hal-04827721v1
La2NiO4+δ: a mixed ionic-electronic conductor for analog redox-based memory devices Klassjan Maas,Edouard Villepreux,David Cooper,Quentin Rafhay,Xavier Mescotet al. SSI-22 International Conference on Solid State Ionics, Jun 2019, Pyeongchang, South Korea Communication dans un congrès hal-04884238v1
Using a mixed conducting oxide to build an analog memory device with neuromorphic programming capabilities Klaasjan Maas,Edouard Villepreux,David Cooper,Quentin Rafhay,Xavier Mescotet al. F2cΠ2 Joint Conference, Jul 2019, Lausanne, Switzerland Communication dans un congrès hal-04884142v1
Development of the Doping of ZnO Nanowires Using Metal (III) Elements in Aqueous Solution P. Gaffuri,E. Appert,C. Verrier,O. Chaix-Pluchery,L. Rapenneet al. Journées de la Matière Condensée (JMC 2018), SFP, Aug 2018, Grenoble, France Communication dans un congrès hal-01979218v1
Statistical analysis of CBRAM endurance D. Alfaro Robayo,C. Nail,G. Sassine,J. F Nodin,M. C. Bernardet al. 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. pp.115-116, ⟨10.1109/VLSI-TSA.2018.8403856⟩ Communication dans un congrès hal-02050364v1
Monitoring the Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Metal Nitrate Pierre Gaffuri,E. Appert,C. Verrier,O. Chaix-Pluchery,L. Rapenneet al. 2018 E-MRS Fall Meeting, Sep 2018, Warsaw, Poland Communication dans un congrès hal-01981253v1
Opto-electrical simulation of III-V nanowire based tandem solar cells on Si Vladimir Maryasin,Quentin Rafhay,D. Bucci,Jérôme Michallon,Anne Kaminski-Cachopo SiliconPV 2018: 8th International Conference on Silicon Photovoltaics, Mar 2018, Lausanne, Switzerland. pp.120001, ⟨10.1063/1.5049318⟩ Communication dans un congrès hal-01959085v1
LaNiO3 thin films: influence of the deposition technique and growth parameters on the film quality Klaasjan Maas,Michel Boudard,Quentin Rafhay,Carmen Jimenez,Laetitia Rapenneet al. 2018 E-MRS Spring Meeting, Jun 2018, Strasbourg, France Communication dans un congrès hal-01981257v1
Plasma immersion ion implantation (PIII): New path for optimizing doping profiles of advanced phosphorus emitters Antoine Veau,Thibaut Desrues,Adeline Lanterne,Pierre Bellanger,Frank Torregrosaet al. SiliconPV 2018: 8th International Conference on Silicon Photovoltaics, Mar 2018, Lausanne, Switzerland. pp.110007, ⟨10.1063/1.5049316⟩ Communication dans un congrès hal-01959074v1
Resistive Switching in LaMnO3+d-based heterostructures Dolors Pla,Raquel Rodriguez-Lamas,Benjamin Meunier,Odette Chaix-Pluchery,Michel Boudardet al. 2018 E-MRS Spring Meeting, symposium R: Solid State Ionics, A. Tarancon, D.S.Mebane, M. Burriel and R. Dittmann, Jun 2018, Strasbourg, France Communication dans un congrès hal-01981232v1
Experimental and theoretical investigation of RRAM endurance statistical behavior D. Alfaro Robayo,G. Sassine,Quentin Rafhay,Gérard Ghibaudo,Gabriel Molaset al. 49th IEEE Semiconductor Interface Specialists Conference (SISC), IEEE, Dec 2018, San Diego, United States. pp.13.2 Communication dans un congrès hal-02052290v1
Resistive switching of nanoengineered LaMnO3 thin films for ReRAM applications Dolors Pla,K. Maas,S. Bagdzevicius,H. Roussel,O. Chaixet al. 2017 MRS Spring Meeting & Exhibit: Symposium ED7 Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power, A. Kummel, A. Demkov, J. Robertson, S. Tachigi, Apr 2017, Phoenix, United States Communication dans un congrès hal-02016912v1
Tunable Morphology and pH–Dependent Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminium Nitrate Claire Verrier,Estelle Appert,Odette Chaix-Pluchery,Laetitia Rapenne,Quentin Rafhayet al. 2017 MRS Fall Meeting & Exhibit: symposium NM03 : Progress in Developing and Applications of Functional One-Dimensional Nanostructures rphic Engineering and Brain-Inspired Computing, J. Beltran-Huarac, W. Jadwisienczak, A. Ponti, B. Zou, Nov 2017, Boston, United States Communication dans un congrès hal-02066510v1
Towards 500°C SPER activated devices for 3D sequential integration J. Micout,B. Sklenard,P. Batude,Rémy Berthelon,Quentin Rafhayet al. 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, CA, United States. pp.24.3, ⟨10.1109/S3S.2017.8309220⟩ Communication dans un congrès hal-01959113v1
How do the electrodes affect the electrical response of a M/La2NiO4/M memristive device? Klaasjan Maas,Dolors Pla,Sarunas Bagdzevicius,Michel Boudard,Q. Rafhayet al. 2017 MRS Spring Meeting & Exhibit: Symposium ED7: Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power, A. Kummel, A. Demkov, J. Robertson, S. Takagi, Apr 2017, Phoenix, United States Communication dans un congrès hal-02016920v1
La2NiO4+δ -based memristive devices: Role of the electrodes and oxygen stoichiometry tuning K. Maas,Q. Rafhay,M. Boudard,H. Roussel,Carmen Jiménezet al. 2017 MRS Fall Meeting & Exhibit: Symposium EM05: Oxide Interfaces - Lattice and Electronic Defect Interactions, E. Dickey, U. Aschauer, N. Benedek, S. Hirose, Nov 2017, Boston, United States Communication dans un congrès hal-02016908v1
Role of the electrodes on the electrical characteristics of La2NiO4-based memristive devices Klassjan Maas,Michel Boudard,J.M. Caicedo,Carmen Jiménez,Sarunas Bagdzeviciuset al. 21st International Conference on Solid State Ionics (SSI 2017), Jun 2017, Padua, Italy Communication dans un congrès hal-02016899v1
Tunable morphology and pH-dependent doping of ZnO nanowires grown by chemical bath deposition Claire Verrier,Estelle Appert,O. Chaix-Pluchery,Laëtitia Rapenne,Georges Bremondet al. Journées Nationales des Nanofils Semiconducteurs, J2N, Nov 2017, Grenoble, France Communication dans un congrès hal-02071024v1
Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices Jessy Micout,Quentin Rafhay,Xavier Garros,Mikael Cassé,Jean Coignuset al. 2017 ESSDERC - 47th European Solid-State Device Research Conference, Sep 2017, Leuven, Belgium. pp.144-147, ⟨10.1109/ESSDERC.2017.8066612⟩ Communication dans un congrès cea-01525266v1
(Invited) Understanding Resistive Switching in Manganite-based Memristive Devices Mónica Burriel,Dolors Pla,Odette Chaix-Pluchery,Raquel Rodriguez-Lamas,Michel Boudardet al. 232nd ECS MEETING: Symposium on Oxide Memristors, J. Rupp, J. Nicholas, J.J. Yang, S. Nonnenmann, Oct 2017, Washington DC, United States Communication dans un congrès hal-02066346v1
High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration J. Micout,V. Lapras,P. Batude,C. Fenouillet-Beranger,J. Lacordet al. 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩ Communication dans un congrès hal-01959097v1
LaMnO3+δ as a functional material for next generation memristive devices Dolors Pla,Quentin Rafhay,Odette Chaix-Pluchery,Raquel Rodriguez-Lamas,Xavier Mescotet al. 2017 MRS Fall Meeting & Exhibit: symposium EM07 -Materials, Devices and Architectures for Neuromorphic Engineering and Brain-Inspired Computing, S. Kim, B. De Salvo, H. Hwang, S. Yu, Nov 2017, Boston, United States Communication dans un congrès hal-02016913v1
Cellules photovoltaïques à base de nanofils Anne Kaminski,Davide Bucci,Quentin Rafhay,Claire Verrier,Vladimir Maryasinet al. Journées Energie du Labex LANEF: Photovoltaïque: couches minces et concepts avancés, May 2017, Grenoble, France Communication dans un congrès hal-02078057v1
ZnO Nanocomposite-Based Dye Sensitive Solar Cells Claire Verrier,Romain Parize,Estelle Appert,Quentin Rafhay,Vincent Consonniet al. Journées Énergie du Labex LANEF. Photovoltaïque: Couches MInces & Concepts avancés., R. André, V. Consonni, L. Grenet, J.P. Travers, May 2017, Grenoble, France Communication dans un congrès hal-02072369v1
HETONAN project: high efficiency tandem solar cells based on III-V nanowires on silicon Alain Fave,Marco Vettori,Céline Chevalier,Nicolas Chauvin,Philippe Regrenyet al. Journées Nationales des Nanofils Semiconducteurs (J2N 2017), Nov 2017, Grenoble, France Communication dans un congrès hal-02071013v1
Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology Jean-Baptiste Henry,Antoine Cros,Julien Rosa,Quentin Rafhay,Gérard Ghibaudo 2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.68-72, ⟨10.1109/ICMTS.2017.7954269⟩ Communication dans un congrès hal-01959125v1
Optimization of ZnO nanocomopsites for dye-sensitized solar cells C. Verrier,Romain Parize,E. Appert,Q. Rafhay,Vincent Consonniet al. 2016 E-MRS Fall Meeting: Symposium R: Organic solar cells including polymers, dyes or perovskites, A. Iwan, F. Caballero Briones, M. Petrus, T. Fukuda, Sep 2016, Varsaw, Poland Communication dans un congrès hal-02072280v1
Optical simulation of absorption in tandem solar cells based on III-V nanowires on silicon Anne Kaminski-Cachopo,V. Maryasin,D. Bucci,J. Michallon,A. Benaliet al. 7th Photovoltaic Technical Conference (PVTC 2016), May 2016, Marseille, France Communication dans un congrès hal-01489057v1
Opto-electrical simulations of tandem solar cells based on III-V nanowires on silicon substrate Vladimir Maryasin,Q. Rafhay,Davide Bucci,Jérôme Michallon,Federico Paniccoet al. 2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications, A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland Communication dans un congrès hal-02072267v1
Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition C. Verrier,E. Appert,O. Chaix-Pluchery,L. Rapenne,Q. Rafhayet al. Atelier National Nanofils Semiconducteurs 2016, Jun 2016, Meudon, France Communication dans un congrès hal-02016935v1
High performance CMOS FDSOI devices activated at low temperature L. Pasini,P. Batude,J. Lacord,M. Cassé,B. Mathieuet al. 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩ Communication dans un congrès hal-01730659v1
Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition C. Verrier,E. Appert,O. Chaix-Pluchery,L. Rapenne,Fares Chouchaneet al. 2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications, A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland Communication dans un congrès hal-02016936v1
New access resistance extraction methodology for 14nm FD-SOI technology Jean-Baptiste Henry,Antoine Cros,Julien Rosa,Quentin Rafhay,Gérard Ghibaudo 2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, Japan. pp.70-75, ⟨10.1109/ICMTS.2016.7476177⟩ Communication dans un congrès hal-01959130v1
Impact of short-channel effects on velocity overshoot in MOSFET Gaspard Hiblot,Quentin Rafhay,Frédéric Boeuf,Gérard Ghibaudo 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. pp.521-524, ⟨10.1109/NEWCAS.2015.7182061⟩ Communication dans un congrès hal-02049733v1
Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment Clement Nguyen,Carlo Cagli,Elisa Vianello,Alain Persico,Gabriel Molaset al. 2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, CA, United States. pp.17-20, ⟨10.1109/IIRW.2015.7437059⟩ Communication dans un congrès hal-01959140v1
Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network Daniele Garbin,Quentin Rafhay,Elisa Vianello,Simon Jeannot,Philippe Candelieret al. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.125, ⟨10.1109/ULIS.2015.7063789⟩ Communication dans un congrès hal-01959186v1
On the impact of OxRAM-based synapses variability on convolutional neural networks performance D. Garbin,E. Vianello,O. Bichler,M. Azzaz,Q. Rafhayet al. 2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15), Jul 2015, Boston, MA, United States. pp.193-198, ⟨10.1109/NANOARCH.2015.7180611⟩ Communication dans un congrès cea-01839851v1
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR Gaspard Hiblot,Quentin Rafhay,Loic Gaben,Gérard Ghibaudo,Frédéric Boeuf 2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.242-245, ⟨10.1109/ESSDERC.2015.7324759⟩ Communication dans un congrès hal-01959154v1
CMOS roadmap analysis from the perspective of III-V technology using MASTAR Gaspard Hiblot,Quentin Rafhay,Gabriel Mugny,Gérard Ghibaudo,Frédéric Boeuf 2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.115-116 Communication dans un congrès hal-02049782v1
Optical absorption and physical properties of ZnO/CdTe core shell nanowire arrays for solar cells Jerôme Michallon,Jerôme Garnier,S. Renet,D. Bucci,Laetitia Rapenneet al. 2014 E-MRS Fall Meeting, Sep 2014, Varsaw, Poland Communication dans un congrès hal-02016994v1
Toward an efficient extremely thin absorber solar cell based on ZnO nanowire arrays Jérôme Michallon,Mehdi Daanoune,Federico Passerini,Davide Bucci,Jérome Garnieret al. 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), Jun 2014, Denver, United States. pp.1084-1088, ⟨10.1109/PVSC.2014.6925103⟩ Communication dans un congrès hal-01959286v1
Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime Gaspard Hiblot,Quentin Rafhay,Frédéric Boeuf,Gérard Ghibaudo 2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.286-289, ⟨10.1109/ESSDERC.2014.6948816⟩ Communication dans un congrès hal-01959276v1
Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses D. Garbin,O. Bichler,E. Vianello,Q. Rafhay,C. Gamratet al. 2014 IEEE International Electron Devices Meeting, Dec 2014, San Francisco, United States. pp.28.4.1-28.4.4, ⟨10.1109/IEDM.2014.7047126⟩ Communication dans un congrès cea-01839848v1
Modeling of the impact of source/drain regions on short channel effects in MOSFETs Dutta T.,Quentin Rafhay,Pananakakis G.,Gérard Ghibaudo 14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523493⟩ Communication dans un congrès hal-01181252v1
New parameter extraction method based on split C-V for FDSOI MOSFETs I. Ben Akkez,A. Cros,C. Fenouillet-Beranger,F. Boeuf,Quentin Rafhayet al. 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2012, Bordeaux, France. ⟨10.1109/ESSDERC.2012.6343372⟩ Communication dans un congrès hal-01959345v1
Origins of the short channel effects increase in III-V nMOSFET technologies T. Dutta,Quentin Rafhay,R. Clerc,J. Lacord,S. Monfrayet al. 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France Communication dans un congrès hal-01959380v1
FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C) B. Sklenard,C. Xu,P. Batude,B. Previtali,C. Taboneet al. 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France. ⟨10.1109/ULIS.2012.6193384⟩ Communication dans un congrès hal-01959376v1
Réalisation et caractérisation de cellules photovoltaïques Anne Kaminski-Cachopo,Delphine Constantin,Loïc Vincent,Quentin Rafhay,Ahmad Bsiesy 12es Journées Pédagogiques du CNFM, Nov 2012, Saint-Malo, France. pp.59-64 Communication dans un congrès hal-00807271v1
Improved extraction of GIDL in FDSOI devices for proper junction quality analysis C. Xu,P. Batude,K. Romanjek,C. Le Royer,C. Taboneet al. 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2011, Helsinki, Finland. ⟨10.1109/ESSDERC.2011.6044183⟩ Communication dans un congrès hal-01959402v1
Characterization and modelling of gate current injection in embedded non-volatile flash memory Alban Zaka,Davide Garetto,Denis Rideau,Pierpaolo Palestri,Jean-Philippe Manceauet al. 2011 IEEE ICMTS International Conference on Microelectronic Test Structures, Apr 2011, Amsterdam, Netherlands. ⟨10.1109/ICMTS.2011.5976874⟩ Communication dans un congrès hal-01959411v1
Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors Q. Rafhay,R. Clerc,J. Coignus,G. Pananakakis,G. Ghibaudo Int. Conference on Ultimate Integration of Silicon, Mar 2010, Glasgow, UK, United Kingdom Communication dans un congrès hal-00604652v1
Programming efficiency and drain disturb trade-off in embedded Non Volatile Memories A. Zaka,P. Palestri,D. Rideau,M. Iellina,E. Dornelet al. 14th International Workshop on Computational Electronics,, Oct 2010, Pisa, Italy Communication dans un congrès hal-00604566v1
Mise en place d'un TP de simulation, élaboration et caractérisation d'une cellule photovoltaïque de première génération. C. Ternon,D. Constantin,A. Kaminski,L. Claudon,F. Volpiet al. 11èmes Journée Pédagogiques du CNFM, Nov 2010, saint malo, France. p. 137-142 ISBN 2-9522395-3-3 Communication dans un congrès hal-00807396v1
Improvements in low temperature (&#60;625°C) FDSOI devices down to 30nm gate length C. Xu,P. Batude,M. Vinet,M. Mouis,M. Casséet al. 2012 VLSI Technology, System and Application, Apr 2010, Hsinchu, Taiwan. ⟨10.1109/VLSI-TSA.2012.6210171⟩ Communication dans un congrès hal-01959359v1
Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancés R. Clerc,Q. Rafhay,G. Ghibaudo GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France Communication dans un congrès hal-00604961v1
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices A. Zaka,Q. Rafhay,P. Palestri,R. Clerc,D. Rideauet al. International Semiconductor Device Research Symposium, Dec 2009, Washington, DC, United States Communication dans un congrès hal-00603838v1
Embedded non-volatile memory study with surface potential based model D. Garetto,A. Zaka,V. Quenette,D. Rideau,E. Dornelet al. NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Ston, United States. pp.554-557 Communication dans un congrès hal-00604191v1
Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials Q. Rafhay,R. Clerc,G. Pananakakis,G. Ghibaudo 4th EUROSOI Workshop, Jan 2008, EUROSOI, France. pp.43-44 Communication dans un congrès hal-00391957v1
Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials Q. Rafhay,R. Clerc,G. Pananakakis,G. Ghibaudo 2008 International Conference on Solid State Devices and Materials, Sep 2008, -, France Communication dans un congrès hal-00391924v1
Perspectives du Formalisme Dérive Diffusion en Régime Quasi Ballistique pour la Modélisation Analytique des Composants MOS R. Clerc,P. Palestri,M. Ferrier,Q. Rafhay,G. Pananakakiset al. GDR Nano, Journées " Simulation et Caractérisation ", 2006, GRENOBLE, France. pp.XX Communication dans un congrès hal-00148261v1

Poster de conférence (5)

Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability Lucas Reganaz,Damien Deleruyelle,Quentin Rafhay,Joel Minguet Lopez,Niccolo Castellaniet al. IRPS 2023 (IEEE International Reliability Physics Symposium), Mar 2023, Monterey, Californie, United States. 2023, ⟨10.1109/IRPS48203.2023.10117882⟩ Poster de conférence cea-04169237v1
Functionalized Oxides for Bifacial Solar Cells with Passivated Contacts: First Results of the OXYGEN Project Thibaut Desrues,Audrey Morisset,Elise Bruhat,A. Veau,M. Hayeset al. 36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2019), Sep 2019, Marseille, France Poster de conférence hal-02344046v1
TEM studies of textured La2NiO4+δ thin films, a Mixed Ionic-Electronic conductor for resistive memory applications Laetitia Rapenne,Klaasjan Maas,Michel Boudard,Quentin Rafhay,Carmen Jiménezet al. XVIe colloque de la Société Française des Microscopies, Jul 2019, Poitiers, France Poster de conférence hal-04589357v1
Light trapping and physical properties of ZnO / CdTe core shell nanowire arrays for solar cells Vincent Consonni,Jerome Michallon,Sebastien Renet,Davide Bucci,Laetitia Rapenneet al. MRS-Fall meeting, 2014, Boston, United States Poster de conférence hal-02918370v1
Optical absorption and transport mechanisms in ZnO nanowire-based ETA solar cells Jerome Michallon,Davide Bucci,Quentin Rafhay,Vincent Consonni,Anne Kaminski EMRS2014-fall meeting, 2014, Warsaw, Poland Poster de conférence hal-02918362v1

Chapitre d'ouvrage (3)

Semi-analytic Modeling for Hot Carriers in Electron Devices Alban Zaka,Pierpaolo Palestri,Quentin Rafhay,Raphael Clerc,Denis Rideauet al. Ed. by T. Grasser. Hot Carrier Degradation in Semiconductor Devices, Springer International Publishing, pp.151-196, 2015, 978-3-319-08993-5, 978-3-319-08994-2. ⟨10.1007/978-3-319-08994-2⟩ Chapitre d'ouvrage hal-01959239v1
Electron and Hole Mobility in Semiconductor Devices Quentin Rafhay,Gérard Ghibaudo Ed. by J.G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 2014, ⟨10.1002/047134608X.W3148.pub2⟩ Chapitre d'ouvrage hal-01959198v1
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material Quentin Rafhay,R. Clerc,G. Ghibaudo,P. Palestri,L. Selmi Nanoscale CMOS: Innovative Materials, Modeling and Characterization, John Wiley & Sons, Inc., pp.287-334, 2013 Chapitre d'ouvrage hal-01959425v1

Autre publication scientifique (1)

Simulation, élaboration et caractérisation de cellules photovoltaïques Céline Ternon,Anne Kaminski,Delphine Constantin,Lionel Claudon,Fabien Volpiet al. 2014, pp.0011. ⟨10.1051/j3ea/2015013⟩ Autre publication scientifique hal-01226010v1

Thèse (1)

Modelling of nano nMOSFETs with alternative channel materials in the fully and quasi ballistic regimes Quentin Rafhay Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2008. Français. ⟨NNT : ⟩ Thèse tel-00398674v1