Raphaël Lachaume
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Low temperature plasma epitaxy of Silicon on III-V for tandem solar cellsInternational Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany
Communication dans un congrès
hal-01632964v1
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Modelling of multijunction cellsFrench-Russian Workshop, Dec 2016, Gif-Sur-Yvette, France
Communication dans un congrès
hal-01416388v1
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Realistic modeling of tandem cells formed by low temperature PECVD epitaxy of silicon-germanium on gallium arsenideE-MRS Spring Meeting 2015, May 2015, Lille, France
Communication dans un congrès
hal-01232097v1
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SiGe Low Temperature Epitaxy by PECVD on III-V MOVPE Grown Material for High Efficiency Tandem Solar Cell Applications16th European Workshop on Metalorganic Vapour Phase Epitaxy, EWMOVPE XVI, Jun 2015, Lund, Sweden
Communication dans un congrès
hal-01232098v1
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Towards realistic simulation of the novel III-V/epi-Si tandem solar cell conceptWorkshop Theory and Modeling for PV, IPVF, Nov 2015, Marseille, France
Communication dans un congrès
hal-01240827v1
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Realistic simulation of III-V/epi-SiGe tandem solar cellsCOST Multiscale solar Workshop, Nov 2015, Valencia, Spain
Communication dans un congrès
hal-01239075v1
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Inverse metamorphic III-V/epi-SiGe tandem solar cell performance assessed by optical and electrical modelingInternational 2017 IEEE Photovoltaic Specialists Conference, 2017 IEEE PVSC-44, Jun 2017, Washington D.C., United States
Poster de conférence
hal-01632952v1
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Optimizing tin dioxide nanoparticles distribution for silicon nanowires growthNanowire week, May 2017, Lund, Sweden
Poster de conférence
hal-01632957v1
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In-Depth Analysis of III-V/Epi-SiGe Tandem Solar Cell Performance Including Advanced Light Trapping SchemesPhotovoltaic Technical Conference, PVTC 2016, May 2016, Marseille, France. , From advanced materials and processes to innovative applications
Poster de conférence
hal-01363733v1
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Tandem radial-junction silicon nanowire solar cells fabricated by PECVDPoster de conférence hal-01424667v1 |