Raphaël Ramos

65
Documents

Publications

Publications

Depth-Resolving the Charge Compensation Mechanism from LiNiO 2 to NiO 2

Roberto Fantin , Thibaut Jousseaume , Raphael Ramos , Gauthier Lefevre , Ambroise van Roekeghem et al.
ACS Energy Letters, 2024, 9 (4), pp.1507-1515. ⟨10.1021/acsenergylett.4c00360⟩
Article dans une revue hal-04569373 v1

Evidencing Phase Transformations of Li6PS5Cl Argyrodite under Ambient Air and Dry Room Exposure

Paul Naillou , Adrien Boulineau , Eric de Vito , Raphaël Ramos , Philippe Azaïs
ACS Applied Materials & Interfaces, 2024, ⟨10.1021/acsami.4c11458⟩
Article dans une revue hal-04719412 v1
Image document

Direct growth of carbon nanotubes forests on carbon fibers to replace microporous layers in proton exchange membrane fuel cells

Marie Fontana , Raphaël Ramos , Arnaud Morin , Jean Dijon
Carbon, 2021, 172, pp.762 - 771. ⟨10.1016/j.carbon.2020.10.049⟩
Article dans une revue hal-03493137 v1
Image document

Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Jie Liang , Rongmei Chen , Raphaël Ramos , Jaeyoung Lee , Hanako Okuno et al.
IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2346-2352. ⟨10.1109/TED.2019.2901658⟩
Article dans une revue lirmm-02082869 v1
Image document

Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study

Jaehyun Lee , Salim Berrada , Fikru Adamu-Lema , Nicole Nagy , Vihar P. Georgiev et al.
IEEE Transactions on Electron Devices, 2018, 65 (9), pp.3884-3892. ⟨10.1109/TED.2018.2853550⟩
Article dans une revue lirmm-01867729 v1
Image document

Variability study of MWCNT local interconnects considering defects and contact resistances - Part I: pristine MWCNT

Rongmei Chen , Jie Liang , Jaehyun Lee , Vihar P. Georgiev , Raphael Ramos et al.
IEEE Transactions on Electron Devices, 2018, 65 (11), pp.4955-4962. ⟨10.1109/TED.2018.2868421⟩
Article dans une revue lirmm-01879935 v1
Image document

Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances - Part II: Impact of Charge Transfer Doping

Rongmei Chen , Jie Liang , Jaehyun Lee , Vihar P. Georgiev , Raphael Ramos et al.
IEEE Transactions on Electron Devices, 2018, 65 (11), pp.4963-4970. ⟨10.1109/TED.2018.2868424⟩
Article dans une revue lirmm-01879940 v1

A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits

Aida Todri-Sanial , Raphael Ramos , Hanako Okuno , Jean Dijon , Abitha Dhavamani et al.
IEEE Circuits and Systems Magazine -New Series-, 2017, 17 (2), pp.47-62. ⟨10.1109/MCAS.2017.2689538⟩
Article dans une revue lirmm-01795757 v1

Enhanced ionic liquid mobility induced by confinement in 1D CNT membranes

Q. Berrod , F. Ferdeghini , P. Judeinstein , N. Genevaz , R. Ramos et al.
Nanoscale, 2016, 8 (15), pp.7845-7848. ⟨10.1039/C6NR01445C⟩
Article dans une revue hal-02051297 v1
Image document

No cytotoxicity or genotoxicity of graphene and graphene oxide in murine lung epithelial FE1 cells in vitro

Stefan Bengtson , Kirsten Kling , Anne Mette Madsen , Asger W. Noergaard , Nicklas Raun Jacobsen et al.
Environmental and Molecular Mutagenesis, 2016, 57 (6), pp.469-482. ⟨10.1002/em.22017⟩
Article dans une revue cea-01849346 v1

Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

M. Brihoum , R. Ramos , K. Menguelti , G. Cunge , E. Pargon et al.
Journal of Applied Physics, 2013, 113, pp.013302. ⟨10.1063/1.4773068⟩
Article dans une revue hal-00904412 v1

Plasma treatments to improve Linewidth roughness during gate patterning

L. Azarnouche , E. Pargon , K. Menguelti , M. Fouchier , M. Brihoum et al.
Proceedings of SPIE, the International Society for Optical Engineering, 2012, Vol. 8328, 83280H, 11pp
Article dans une revue hal-00808681 v1

Radical surface interactions in industrial silicon plasma etch reactors

G. Cunge , D. Vempaire , R. Ramos , M. Touzeau , O. Joubert et al.
Plasma Sources Science and Technology, 2010, 19, pp.4017. ⟨10.1088/0963-0252/19/3/034017⟩
Article dans une revue istex hal-01005939 v1

Gas temperature measurement in HBr, Cl2, SF6, CF4 and O2 plasmas

G. Cunge , R. Ramos , D. Vempaire , M. Touzeau , M. Neijbauer et al.
Journal of Vacuum Science and Technology, 2009, 27 (3), pp.471-478. ⟨10.1116/1.3106626⟩
Article dans une revue hal-00388592 v1

Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W and WN etching processes

R. Ramos , G. Cunge , O. Joubert , T. Lill
Journal of Vacuum Science and Technology, 2009, B 27, pp.113-120
Article dans une revue hal-00397116 v1

Velocity distribution function of sputtered Ga atoms during inductively-coupled Ar plasma treatment of a GaAs surface

Emilie Despiau-Pujo , Pascal Chabert , R. Ramos , G. Cunge , N. Sadeghi
Journal of Vacuum Science & Technology A, 2009, 27, pp.356-361. ⟨10.1116/1.3081967⟩
Article dans une revue hal-00462482 v1

Tungsten metal gate etching in Cl2/O2 inductively coupled high density plasmas

T. Morel , S. Barnola , R. Ramos , A. Beaurain , E. Pargon et al.
Journal of Vacuum Science and Technology, 2008, pp.B 26, (2008), 1875-1882
Article dans une revue hal-00397097 v1

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

R. Ramos , G. Cunge , O. R. Joubert
Journal of Vacuum Science and Technology, 2008, pp.B 26 (1), (2008), 181-188
Article dans une revue hal-00397102 v1

Absorption Spectroscopy in BCl3 inductively coupled plasmas: determination of density, rotational, translational and vibrational temperature of BCl molecule

R. Ramos , G. Cunge , M. Touzeau , N. Sadeghi
Journal of Physics D: Applied Physics, 2008, pp.41 (11), (2008), 115205
Article dans une revue hal-00397107 v1

Measured velocity distribution of sputtered Al atoms perpendicularly and parallel to the target

R. Ramos , G. Cunge , M. Touzeau , N. Sadeghi
Journal of Physics D: Applied Physics, 2008, pp.41 (15), (2008), 152003
Article dans une revue hal-00397105 v1

Influence of the reactor walls composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: II. During silicon etching

G. Cunge , N. Sadeghi , R. Ramos
Journal of Applied Physics, 2007, 102 (9), pp.102 093305. ⟨10.1063/1.2803881⟩
Article dans une revue hal-00384292 v1

Cleaning Aluminum Fluoride coatings from plasma reactor walls in SiCl4/Cl2 plasmas

R. Ramos , G. Cunge , B. Pelissier , O. Joubert
Plasma Sources Science and Technology, 2007, pp.16, 711-715
Article dans une revue hal-00384274 v1

Influence of the reactor walls composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: I. Without silicon etching

G. Cunge , N. Sadeghi , R. Ramos
Journal of Applied Physics, 2007, pp.102, (2007), 093304
Article dans une revue hal-00397074 v1

Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas

E. Sungauer , E. Pargon , X. Mellhaoui , R. Ramos , G. Cunge et al.
Journal of Vacuum Science and Technology, 2007, pp.B 25, (2007), 1640-1646
Article dans une revue hal-00397068 v1
Image document

On the interest of carbon-coated plasma reactor for advanced gate stack etching processes

R. Ramos , G. Cunge , O. Joubert
Journal of Vacuum Science and Technology, 2007, 25, pp.290-303. ⟨10.1116/1.2464126⟩
Article dans une revue hal-00397072 v1

Plasma/reactor walls interactions in advanced gate etching processes

R. Ramos , G. Cunge , O. Joubert , N. Sadeghi , M. Mori et al.
Thin Solid Films, 2007, 515 (12), pp.4846-4852
Article dans une revue hal-00397069 v1

New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes

G. Cunge , B. Pelissier , O. Joubert , R. Ramos , C. Maurice
Plasma Sources Science and Technology, 2005, pp.14 599
Article dans une revue hal-00384291 v1
Image document

Towards the industrialization of solid-state batteries: Impact of dry room exposure on sulfide-based solid electrolyte materials

Xavier Randrema , Ivan Leteyi Mfiban , Marine Soler , Sébastien Launois , Sébastien Diry et al.
NordBatt 2022 - The 5th NordBatt conference, Oct 2022, Goteborg, Sweden
Communication dans un congrès cea-04049568 v1

Etch process cleaning to improve wafer to wafer reproducibility

T. Chevolleau , C. Petit-Etienne , Gilles Cunge , Erwine Pargon , L. Vallier et al.
ENRIS 2019 (European Nanofabrication Research Infrastructure Symposium), 2019, UNIVERSITY OF TWENTE, Netherlands
Communication dans un congrès hal-02624143 v1

A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects

Jie Liang , Raphael Ramos , Jean Dijon , H. Okuno , D. Kalita et al.
IEDM: International Electron Devices Meeting, Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268502⟩
Communication dans un congrès lirmm-01795777 v1
Image document

Progress on carbon nanotube BEOL interconnects

Benjamin Uhlig , Jie Liang , Lee Jaehyun , Raphael Ramos , Abitha Dhavamani et al.
DATE 2018 - 21st Design, Automation and Test in Europe Conference and Exhibition, Mar 2018, Dresden, Germany. pp.937-942, ⟨10.23919/DATE.2018.8342144⟩
Communication dans un congrès lirmm-01880198 v1

Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects

Benjamin Uhlig , Abitha Dhavamani , Nicole Nagy , Katharina Lilienthal , R. Liske et al.
IITC: International Interconnect Technology Conference, Jun 2018, Santa Clara, United States. pp.16-18, ⟨10.1109/IITC.2018.8430411⟩
Communication dans un congrès lirmm-01880138 v1
Image document

The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations

Jaehyun Lee , Salim Berrada , Jie Liang , Toufik Sadi , Vihar Georgiev et al.
SISPAD: Simulation of Semiconductor Processes and Devices, Sep 2017, Kamakura, Japan. pp.157-160, ⟨10.23919/SISPAD.2017.8085288⟩
Communication dans un congrès lirmm-01795799 v1

Challenges related to linewidth roughness

Erwine Pargon , Laurent Azarnouch , Kevin Menguelti , Marc Fouchier , Melisa Brihoum et al.
China Semiconductor Technology International Conference (CSTIC), Mar 2012, Shanghai, China
Communication dans un congrès hal-02338405 v1

On the origin of the line width roughness of photoresist patterns after plasma exposure

R. Ramos , M. Brihoum , K. Menguelti , L. Azarnouche , M. Fouchier et al.
AVS 59th Symposium, Oct 2012, tampa, United States
Communication dans un congrès hal-00808675 v1

Challenges and future prospects in plasma etching processes

O. Joubert , E. Pargon , G. Cunge , Maxime Darnon , L. Vallier et al.
3rd International Conference on PLAsma NanoTechnology and Science, Mar 2010, Nagoya,, Japan
Communication dans un congrès hal-00625378 v1

Absorption spectroscopy for plasma diagnostics

G. Cunge , P. Bodart , D. Vempaire , R. Ramos , N. Sadeghi et al.
3rd workshop on Plasma Etch and Strip in Microelectronics PESM2010, Mar 2010, Grenoble, France
Communication dans un congrès hal-00944938 v1

Reaction mechanisms in industrial silicon plasma etch reactors

G. Cunge , D. Vempaire , N. Sadeghi , R. Ramos , M. Touzeau et al.
XXIX International Conference on Phenomena in Ionized Gases (ICPIG), Jul 2009, Cancun, Mexico
Communication dans un congrès hal-00460996 v1

Laser and LED based optical diagnostic techniques applied in industrial plasma etch reactors

N. Sadeghi , G. Cunge , D. Vempaire , M. Touzeau , R. Ramos et al.
56th International AVS Symposium & Topical Conferences, 2009, San Jose, United States
Communication dans un congrès hal-00461002 v1

Challenges and future prospects in plasma etching

G. Cunge , E. Pargon , O. R. Joubert , L. Vallier , T. Chevolleau et al.
ISPlasma 2009, 2009, Nagoya, United States
Communication dans un congrès hal-00397853 v1

Physical and chemical reactions in Cl2 based etching plasmas: influence of plasma-surface interactions

G. Cunge , N. Sadeghi , D. Vempaire , M. Touzeau , R. Ramos
9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials, Oct 2008, Huangshan, China
Communication dans un congrès hal-00944941 v1

Spectroscopic investigation of plasma etching reactors

M. Touzeau , R. Ramos , D. Vempaire , G. Cunge , N. Sadeghi
VI Workshop em Fisica Molecular e Spectroscopia, 2008, Brazil
Communication dans un congrès hal-00397783 v1

Velocity distribution of Al sputtered atoms in an ICP reactor by laser absorption and Laser Induced Fluorescence

R. Ramos , M. Touzeau , G. Cunge , N. Sadeghi
9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials (SPSM), 2008, China
Communication dans un congrès hal-00398880 v1

Ar Ion Sputtering of GaAs Studied by Molecular Dynamics Simulation and Laser Spectroscopy of Ga Atoms in the Gas Phase

E. Despiau-Pujo , P. Chabert , R. Ramos , G. Cunge , N. Sadeghi
55th International AVS Symposium & Topical Conferences, Oct 2008, boston, United States
Communication dans un congrès hal-00400658 v1

Physical and chemical reactions in chlorine based etching plasmas: influence of plasma-surface interactions

G. Cunge , N. Sadeghi , D. Vempaire , M. Touzeau , R. Ramos
9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials, 2008, China
Communication dans un congrès hal-00397781 v1

The challenges in gate stack patterning for the next technological nodes

E. Pargon , T. Morel , E. Sungauer , A. Bazin , M. Martin et al.
Gordon research conference, Plasma processing science,, 2008, United States
Communication dans un congrès hal-00397773 v1

Gate Stack Patterning: challenges of the future

O. R. Joubert , E. Pargon , G. Cunge , T. Chevolleau , B. Pelissier et al.
1st International Conference on Plasma-Nanotechnology & Science (IC-PLANTS), 2008, nagoya, Japan
Communication dans un congrès hal-00397778 v1

Blue diode laser absorption spectroscopy of sputtered aluminium atoms

R. Ramos , M. Touzeau , G. Cunge , N. Sadeghi
Frontiers in Low Temperature Plasma Diagnostics VII,, 2007, United States
Communication dans un congrès hal-00398863 v1

Plasma etching challenges involved in gate stack patterning for 45 nm technological nodes and beyond

O. R. Joubert , E. Pargon , G. Cunge , T. Chevolleau , B. Pelissier et al.
1st workshop on plasma etch and strip in microelectronic (PESM), 2007, Louvain, Belgium
Communication dans un congrès hal-00397771 v1

Restoring the chamber walls surfaces of plasma reactors exposed to repeated fluorine-based plasma cleans

R. Ramos , G. Cunge , B. Pelissier , O. R. Joubert , T. Chevolleau
16th International Colloquium on Plasma processes (CIP), 2007, toulouse, France
Communication dans un congrès hal-00398865 v1

Impact of reactor walls chemical composition on radicals' densities in the chlorine based silicon etching ICP plasmas

N. Sadeghi , G. Cunge , R. Ramos
18th International Symposium on Plasma Chemistry (ISPC), Aug 2007, Kyoto, Japan
Communication dans un congrès hal-00944971 v1

Interaction of Cl2 based plasmas with chamber walls in a silicon etching reactor

G. Cunge , N. Sadeghi , R. Ramos , O. R. Joubert , M. Touzeau
Frontiers in Low Temperature Plasma Diagnostics VII,, 2007, United Kingdom
Communication dans un congrès hal-00397769 v1

Plasma etching challenges of new materials involved in gate stack patterning for sub-45 nm technological nodes

O. Joubert , A. Le Gouil , R. Ramos , M. Helot , G. Cunge et al.
209th ECS meeting, Denver, May 2006, Denver, United States
Communication dans un congrès hal-00944953 v1

Plasma Etching Challenges of New Materials Involved in Gate Stack Patterning for sub 45 nm Technological Nodes

O. R. Joubert , A. Le Gouil , R. Ramos , M. Helot , G. Cunge et al.
Proceedings of the Electrochemical. Society (209th Meeting), 2006, denver, United States
Communication dans un congrès hal-00398859 v1

Impact of chamber walls on radicals densities in Cl2 ICP plasmas

G. Cunge , N. Sadeghi , R. Ramos , O. R. Joubert
53rd International AVS Symposium & Topical Conferences, 2006, san francisco, United States
Communication dans un congrès hal-00400475 v1

Plasma etching challenges of new materials involved in gate stack patterning for sub 45nm technological node

O. R. Joubert , A. Le Gouil , R. Ramos , M. Helot , O. Luere et al.
53rd International AVS Symposium & Topical Conferences, 2006, San Francisco, United States. ⟨10.1149/MA2006-01/8/367⟩
Communication dans un congrès hal-00397753 v1

Emerging Application of Fluorocarbon Plasmas for Integrated Circuits Fabrication

T. Chevolleau , G. Cunge , Maxime Darnon , R. Ramos , L. Vallier et al.
8th International workshop on fluorocarbon plasma, 2006, autrans, France
Communication dans un congrès hal-00400476 v1

Metal gate stack plasma patterning studies

L. Vallier , T. Chevolleau , O. R. Joubert , G. Cunge , A. Le Gouil et al.
IEEE International Conference on Plasma Processes (ICOPS 06), 2006, traverse city, United States
Communication dans un congrès hal-00397763 v1

Understanding the impact of chamber walls during plasma etching: a key to control plasma processes in ULSI

R. Ramos , G. Cunge , O. R. Joubert , M. Orlowski , T. Lill
53rd International AVS Symposium & Topical Conferences, 2006, san francisco, United States
Communication dans un congrès hal-00400472 v1

Plasma/reactor wall interactions in gate etching processes

G. Cunge , R. Ramos , O. R. Joubert , N. Sadeghi , M. Mori
27th International symposium on dry process (DPS), 2005, jeju, South Korea
Communication dans un congrès hal-00397119 v1

Innovative strategy to improve the stability of plasma etching processes

R. Ramos , G. Cunge , B. Pelissier , O. R. Joubert
52nd International AVS Symposium & Topical Conferences, 2005, boston, United States
Communication dans un congrès hal-00400466 v1