
Raphaël Ramos
65
Documents
Publications
Publications
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Towards the industrialization of solid-state batteries: Impact of dry room exposure on sulfide-based solid electrolyte materialsNordBatt 2022 - The 5th NordBatt conference, Oct 2022, Goteborg, Sweden
Communication dans un congrès
cea-04049568
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Etch process cleaning to improve wafer to wafer reproducibilityENRIS 2019 (European Nanofabrication Research Infrastructure Symposium), 2019, UNIVERSITY OF TWENTE, Netherlands
Communication dans un congrès
hal-02624143
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A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnectsIEDM: International Electron Devices Meeting, Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268502⟩
Communication dans un congrès
lirmm-01795777
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Progress on carbon nanotube BEOL interconnectsDATE 2018 - 21st Design, Automation and Test in Europe Conference and Exhibition, Mar 2018, Dresden, Germany. pp.937-942, ⟨10.23919/DATE.2018.8342144⟩
Communication dans un congrès
lirmm-01880198
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Challenges and Progress on Carbon Nanotube Integration for BEOL InterconnectsIITC: International Interconnect Technology Conference, Jun 2018, Santa Clara, United States. pp.16-18, ⟨10.1109/IITC.2018.8430411⟩
Communication dans un congrès
lirmm-01880138
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The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulationsSISPAD: Simulation of Semiconductor Processes and Devices, Sep 2017, Kamakura, Japan. pp.157-160, ⟨10.23919/SISPAD.2017.8085288⟩
Communication dans un congrès
lirmm-01795799
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Challenges related to linewidth roughnessChina Semiconductor Technology International Conference (CSTIC), Mar 2012, Shanghai, China
Communication dans un congrès
hal-02338405
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On the origin of the line width roughness of photoresist patterns after plasma exposureAVS 59th Symposium, Oct 2012, tampa, United States
Communication dans un congrès
hal-00808675
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Challenges and future prospects in plasma etching processes3rd International Conference on PLAsma NanoTechnology and Science, Mar 2010, Nagoya,, Japan
Communication dans un congrès
hal-00625378
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Absorption spectroscopy for plasma diagnostics3rd workshop on Plasma Etch and Strip in Microelectronics PESM2010, Mar 2010, Grenoble, France
Communication dans un congrès
hal-00944938
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Reaction mechanisms in industrial silicon plasma etch reactorsXXIX International Conference on Phenomena in Ionized Gases (ICPIG), Jul 2009, Cancun, Mexico
Communication dans un congrès
hal-00460996
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Laser and LED based optical diagnostic techniques applied in industrial plasma etch reactors56th International AVS Symposium & Topical Conferences, 2009, San Jose, United States
Communication dans un congrès
hal-00461002
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Challenges and future prospects in plasma etchingISPlasma 2009, 2009, Nagoya, United States
Communication dans un congrès
hal-00397853
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Physical and chemical reactions in Cl2 based etching plasmas: influence of plasma-surface interactions9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials, Oct 2008, Huangshan, China
Communication dans un congrès
hal-00944941
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Spectroscopic investigation of plasma etching reactorsVI Workshop em Fisica Molecular e Spectroscopia, 2008, Brazil
Communication dans un congrès
hal-00397783
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Velocity distribution of Al sputtered atoms in an ICP reactor by laser absorption and Laser Induced Fluorescence9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials (SPSM), 2008, China
Communication dans un congrès
hal-00398880
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Ar Ion Sputtering of GaAs Studied by Molecular Dynamics Simulation and Laser Spectroscopy of Ga Atoms in the Gas Phase55th International AVS Symposium & Topical Conferences, Oct 2008, boston, United States
Communication dans un congrès
hal-00400658
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Physical and chemical reactions in chlorine based etching plasmas: influence of plasma-surface interactions9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials, 2008, China
Communication dans un congrès
hal-00397781
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The challenges in gate stack patterning for the next technological nodesGordon research conference, Plasma processing science,, 2008, United States
Communication dans un congrès
hal-00397773
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Gate Stack Patterning: challenges of the future1st International Conference on Plasma-Nanotechnology & Science (IC-PLANTS), 2008, nagoya, Japan
Communication dans un congrès
hal-00397778
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Blue diode laser absorption spectroscopy of sputtered aluminium atomsFrontiers in Low Temperature Plasma Diagnostics VII,, 2007, United States
Communication dans un congrès
hal-00398863
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Plasma etching challenges involved in gate stack patterning for 45 nm technological nodes and beyond1st workshop on plasma etch and strip in microelectronic (PESM), 2007, Louvain, Belgium
Communication dans un congrès
hal-00397771
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Restoring the chamber walls surfaces of plasma reactors exposed to repeated fluorine-based plasma cleans16th International Colloquium on Plasma processes (CIP), 2007, toulouse, France
Communication dans un congrès
hal-00398865
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Impact of reactor walls chemical composition on radicals' densities in the chlorine based silicon etching ICP plasmas18th International Symposium on Plasma Chemistry (ISPC), Aug 2007, Kyoto, Japan
Communication dans un congrès
hal-00944971
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Interaction of Cl2 based plasmas with chamber walls in a silicon etching reactorFrontiers in Low Temperature Plasma Diagnostics VII,, 2007, United Kingdom
Communication dans un congrès
hal-00397769
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Plasma etching challenges of new materials involved in gate stack patterning for sub-45 nm technological nodes209th ECS meeting, Denver, May 2006, Denver, United States
Communication dans un congrès
hal-00944953
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Plasma Etching Challenges of New Materials Involved in Gate Stack Patterning for sub 45 nm Technological NodesProceedings of the Electrochemical. Society (209th Meeting), 2006, denver, United States
Communication dans un congrès
hal-00398859
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Impact of chamber walls on radicals densities in Cl2 ICP plasmas53rd International AVS Symposium & Topical Conferences, 2006, san francisco, United States
Communication dans un congrès
hal-00400475
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Plasma etching challenges of new materials involved in gate stack patterning for sub 45nm technological node53rd International AVS Symposium & Topical Conferences, 2006, San Francisco, United States. ⟨10.1149/MA2006-01/8/367⟩
Communication dans un congrès
hal-00397753
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Emerging Application of Fluorocarbon Plasmas for Integrated Circuits Fabrication8th International workshop on fluorocarbon plasma, 2006, autrans, France
Communication dans un congrès
hal-00400476
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Metal gate stack plasma patterning studiesIEEE International Conference on Plasma Processes (ICOPS 06), 2006, traverse city, United States
Communication dans un congrès
hal-00397763
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Understanding the impact of chamber walls during plasma etching: a key to control plasma processes in ULSI53rd International AVS Symposium & Topical Conferences, 2006, san francisco, United States
Communication dans un congrès
hal-00400472
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Plasma/reactor wall interactions in gate etching processes27th International symposium on dry process (DPS), 2005, jeju, South Korea
Communication dans un congrès
hal-00397119
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Innovative strategy to improve the stability of plasma etching processes52nd International AVS Symposium & Topical Conferences, 2005, boston, United States
Communication dans un congrès
hal-00400466
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Towards a practical use of sulfide solid electrolytes in all-solid-state-batteries: Impact of dry room exposure on H2S release and material propertiesGORDON CONFERENCE, Jul 2022, Ventura, United States. 2022
Poster de conférence
cea-04248083
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Progress on Pt-Salt Doped Carbon Nanotubes for Local Interconnects12e Colloque National du GDR SoC/SiP, Jun 2018, Paris, France. 2018
Poster de conférence
lirmm-02132496
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PROCEDE DE FABRICATION D’UNE MEMBRANE A ELECTROLYTEFrance, N° de brevet: FR2002224. 2020
Brevet
hal-02997972
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Interactions entre les plasmas de gravure à couplage inductif et les parois du réacteurPhysique [physics]. Université Joseph-Fourier - Grenoble I, 2008. Français. ⟨NNT : ⟩
Thèse
tel-00330664
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