Raphaël Ramos

Publications

Article dans une revue (27)

Depth-Resolving the Charge Compensation Mechanism from LiNiO 2 to NiO 2 Roberto Fantin,Thibaut Jousseaume,Raphael Ramos,Gauthier Lefevre,Ambroise van Roekeghemet al. ACS Energy Letters, 2024, 9 (4), pp.1507-1515. ⟨10.1021/acsenergylett.4c00360⟩ Article dans une revue hal-04569373v1
Evidencing Phase Transformations of Li6PS5Cl Argyrodite under Ambient Air and Dry Room Exposure Paul Naillou,Adrien Boulineau,Eric de Vito,Raphaël Ramos,Philippe Azaïs ACS Applied Materials & Interfaces, 2024, ⟨10.1021/acsami.4c11458⟩ Article dans une revue hal-04719412v1
Direct growth of carbon nanotubes forests on carbon fibers to replace microporous layers in proton exchange membrane fuel cells Marie Fontana,Raphaël Ramos,Arnaud Morin,Jean Dijon Carbon, 2021, 172, pp.762 - 771. ⟨10.1016/j.carbon.2020.10.049⟩ Article dans une revue hal-03493137v1
Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications Jie Liang,Rongmei Chen,Raphaël Ramos,Jaeyoung Lee,Hanako Okunoet al. IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2346-2352. ⟨10.1109/TED.2019.2901658⟩ Article dans une revue lirmm-02082869v1
Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study Jaehyun Lee,Salim Berrada,Fikru Adamu-Lema,Nicole Nagy,Vihar P. Georgievet al. IEEE Transactions on Electron Devices, 2018, 65 (9), pp.3884-3892. ⟨10.1109/TED.2018.2853550⟩ Article dans une revue lirmm-01867729v1
Variability study of MWCNT local interconnects considering defects and contact resistances - Part I: pristine MWCNT Rongmei Chen,Jie Liang,Jaehyun Lee,Vihar P. Georgiev,Raphael Ramoset al. IEEE Transactions on Electron Devices, 2018, 65 (11), pp.4955-4962. ⟨10.1109/TED.2018.2868421⟩ Article dans une revue lirmm-01879935v1
Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances - Part II: Impact of Charge Transfer Doping Rongmei Chen,Jie Liang,Jaehyun Lee,Vihar P. Georgiev,Raphael Ramoset al. IEEE Transactions on Electron Devices, 2018, 65 (11), pp.4963-4970. ⟨10.1109/TED.2018.2868424⟩ Article dans une revue lirmm-01879940v1
A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits Aida Todri-Sanial,Raphael Ramos,Hanako Okuno,Jean Dijon,Abitha Dhavamaniet al. IEEE Circuits and Systems Magazine -New Series-, 2017, 17 (2), pp.47-62. ⟨10.1109/MCAS.2017.2689538⟩ Article dans une revue lirmm-01795757v1
Enhanced ionic liquid mobility induced by confinement in 1D CNT membranes Q. Berrod,F. Ferdeghini,P. Judeinstein,N. Genevaz,R. Ramoset al. Nanoscale, 2016, 8 (15), pp.7845-7848. ⟨10.1039/C6NR01445C⟩ Article dans une revue hal-02051297v1
No cytotoxicity or genotoxicity of graphene and graphene oxide in murine lung epithelial FE1 cells in vitro Stefan Bengtson,Kirsten Kling,Anne Mette Madsen,Asger W. Noergaard,Nicklas Raun Jacobsenet al. Environmental and Molecular Mutagenesis, 2016, 57 (6), pp.469-482. ⟨10.1002/em.22017⟩ Article dans une revue cea-01849346v1
Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment M. Brihoum,R. Ramos,K. Menguelti,G. Cunge,E. Pargonet al. Journal of Applied Physics, 2013, 113, pp.013302. ⟨10.1063/1.4773068⟩ Article dans une revue hal-00904412v1
Plasma treatments to improve Linewidth roughness during gate patterning L. Azarnouche,E. Pargon,K. Menguelti,M. Fouchier,M. Brihoumet al. Proceedings of SPIE, the International Society for Optical Engineering, 2012, Vol. 8328, 83280H, 11pp Article dans une revue hal-00808681v1
Radical surface interactions in industrial silicon plasma etch reactors G. Cunge,D. Vempaire,R. Ramos,M. Touzeau,O. Joubertet al. Plasma Sources Science and Technology, 2010, 19, pp.4017. ⟨10.1088/0963-0252/19/3/034017⟩ Article dans une revue istex hal-01005939v1
Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W and WN etching processes R. Ramos,G. Cunge,O. Joubert,T. Lill Journal of Vacuum Science and Technology, 2009, B 27, pp.113-120 Article dans une revue hal-00397116v1
Gas temperature measurement in HBr, Cl2, SF6, CF4 and O2 plasmas G. Cunge,R. Ramos,D. Vempaire,M. Touzeau,M. Neijbaueret al. Journal of Vacuum Science and Technology, 2009, 27 (3), pp.471-478. ⟨10.1116/1.3106626⟩ Article dans une revue hal-00388592v1
Velocity distribution function of sputtered Ga atoms during inductively-coupled Ar plasma treatment of a GaAs surface Emilie Despiau-Pujo,Pascal Chabert,R. Ramos,G. Cunge,N. Sadeghi Journal of Vacuum Science & Technology A, 2009, 27, pp.356-361. ⟨10.1116/1.3081967⟩ Article dans une revue hal-00462482v1
Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes R. Ramos,G. Cunge,O. R. Joubert Journal of Vacuum Science and Technology, 2008, pp.B 26 (1), (2008), 181-188 Article dans une revue hal-00397102v1
Absorption Spectroscopy in BCl3 inductively coupled plasmas: determination of density, rotational, translational and vibrational temperature of BCl molecule R. Ramos,G. Cunge,M. Touzeau,N. Sadeghi Journal of Physics D: Applied Physics, 2008, pp.41 (11), (2008), 115205 Article dans une revue hal-00397107v1
Tungsten metal gate etching in Cl2/O2 inductively coupled high density plasmas T. Morel,S. Barnola,R. Ramos,A. Beaurain,E. Pargonet al. Journal of Vacuum Science and Technology, 2008, pp.B 26, (2008), 1875-1882 Article dans une revue hal-00397097v1
Measured velocity distribution of sputtered Al atoms perpendicularly and parallel to the target R. Ramos,G. Cunge,M. Touzeau,N. Sadeghi Journal of Physics D: Applied Physics, 2008, pp.41 (15), (2008), 152003 Article dans une revue hal-00397105v1
Influence of the reactor walls composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: I. Without silicon etching G. Cunge,N. Sadeghi,R. Ramos Journal of Applied Physics, 2007, pp.102, (2007), 093304 Article dans une revue hal-00397074v1
Cleaning Aluminum Fluoride coatings from plasma reactor walls in SiCl4/Cl2 plasmas R. Ramos,G. Cunge,B. Pelissier,O. Joubert Plasma Sources Science and Technology, 2007, pp.16, 711-715 Article dans une revue hal-00384274v1
Influence of the reactor walls composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: II. During silicon etching G. Cunge,N. Sadeghi,R. Ramos Journal of Applied Physics, 2007, 102 (9), pp.102 093305. ⟨10.1063/1.2803881⟩ Article dans une revue hal-00384292v1
Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas E. Sungauer,E. Pargon,X. Mellhaoui,R. Ramos,G. Cungeet al. Journal of Vacuum Science and Technology, 2007, pp.B 25, (2007), 1640-1646 Article dans une revue hal-00397068v1
On the interest of carbon-coated plasma reactor for advanced gate stack etching processes R. Ramos,G. Cunge,O. Joubert Journal of Vacuum Science and Technology, 2007, 25, pp.290-303. ⟨10.1116/1.2464126⟩ Article dans une revue hal-00397072v1
Plasma/reactor walls interactions in advanced gate etching processes R. Ramos,G. Cunge,O. Joubert,N. Sadeghi,M. Moriet al. Thin Solid Films, 2007, 515 (12), pp.4846-4852 Article dans une revue hal-00397069v1
New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes G. Cunge,B. Pelissier,O. Joubert,R. Ramos,C. Maurice Plasma Sources Science and Technology, 2005, pp.14 599 Article dans une revue hal-00384291v1

Communication dans un congrès (35)

1D nanoporous membrane boosts the ionic conductivity of electrolytes. Quentin Berrod,J.-M. Zanotti,Patrick Judeinstein,Camille Pinchart,Nino Modestoet al. JDN 2025, Jun 2025, Annecy, France Communication dans un congrès hal-05369260v1
Towards the industrialization of solid-state batteries: Impact of dry room exposure on sulfide-based solid electrolyte materials Xavier Randrema,Ivan Leteyi Mfiban,Marine Soler,Sébastien Launois,Sébastien Diryet al. NordBatt 2022 - The 5th NordBatt conference, Oct 2022, Goteborg, Sweden Communication dans un congrès cea-04049568v1
Etch process cleaning to improve wafer to wafer reproducibility T. Chevolleau,C. Petit-Etienne,Gilles Cunge,Erwine Pargon,L. Vallieret al. ENRIS 2019 (European Nanofabrication Research Infrastructure Symposium), 2019, UNIVERSITY OF TWENTE, Netherlands Communication dans un congrès hal-02624143v1
Progress on carbon nanotube BEOL interconnects Benjamin Uhlig,Jie Liang,Lee Jaehyun,Raphael Ramos,Abitha Dhavamaniet al. DATE 2018 - 21st Design, Automation and Test in Europe Conference and Exhibition, Mar 2018, Dresden, Germany. pp.937-942, ⟨10.23919/DATE.2018.8342144⟩ Communication dans un congrès lirmm-01880198v1
A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects Jie Liang,Raphael Ramos,Jean Dijon,H. Okuno,D. Kalitaet al. IEDM: International Electron Devices Meeting, Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268502⟩ Communication dans un congrès lirmm-01795777v1
Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects Benjamin Uhlig,Abitha Dhavamani,Nicole Nagy,Katharina Lilienthal,R. Liskeet al. IITC: International Interconnect Technology Conference, Jun 2018, Santa Clara, United States. pp.16-18, ⟨10.1109/IITC.2018.8430411⟩ Communication dans un congrès lirmm-01880138v1
The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations Jaehyun Lee,Salim Berrada,Jie Liang,Toufik Sadi,Vihar Georgievet al. SISPAD: Simulation of Semiconductor Processes and Devices, Sep 2017, Kamakura, Japan. pp.157-160, ⟨10.23919/SISPAD.2017.8085288⟩ Communication dans un congrès lirmm-01795799v1
Challenges related to linewidth roughness Erwine Pargon,Laurent Azarnouch,Kevin Menguelti,Marc Fouchier,Melisa Brihoumet al. China Semiconductor Technology International Conference (CSTIC), Mar 2012, Shanghai, China Communication dans un congrès hal-02338405v1
On the origin of the line width roughness of photoresist patterns after plasma exposure R. Ramos,M. Brihoum,K. Menguelti,L. Azarnouche,M. Fouchieret al. AVS 59th Symposium, Oct 2012, tampa, United States Communication dans un congrès hal-00808675v1
Challenges and future prospects in plasma etching processes O. Joubert,E. Pargon,G. Cunge,Maxime Darnon,L. Vallieret al. 3rd International Conference on PLAsma NanoTechnology and Science, Mar 2010, Nagoya,, Japan Communication dans un congrès hal-00625378v1
Absorption spectroscopy for plasma diagnostics G. Cunge,P. Bodart,D. Vempaire,R. Ramos,N. Sadeghiet al. 3rd workshop on Plasma Etch and Strip in Microelectronics PESM2010, Mar 2010, Grenoble, France Communication dans un congrès hal-00944938v1
Reaction mechanisms in industrial silicon plasma etch reactors G. Cunge,D. Vempaire,N. Sadeghi,R. Ramos,M. Touzeauet al. XXIX International Conference on Phenomena in Ionized Gases (ICPIG), Jul 2009, Cancun, Mexico Communication dans un congrès hal-00460996v1
Laser and LED based optical diagnostic techniques applied in industrial plasma etch reactors N. Sadeghi,G. Cunge,D. Vempaire,M. Touzeau,R. Ramoset al. 56th International AVS Symposium & Topical Conferences, 2009, San Jose, United States Communication dans un congrès hal-00461002v1
Challenges and future prospects in plasma etching G. Cunge,E. Pargon,O. R. Joubert,L. Vallier,T. Chevolleauet al. ISPlasma 2009, 2009, Nagoya, United States Communication dans un congrès hal-00397853v1
Spectroscopic investigation of plasma etching reactors M. Touzeau,R. Ramos,D. Vempaire,G. Cunge,N. Sadeghi VI Workshop em Fisica Molecular e Spectroscopia, 2008, Brazil Communication dans un congrès hal-00397783v1
Physical and chemical reactions in Cl2 based etching plasmas: influence of plasma-surface interactions G. Cunge,N. Sadeghi,D. Vempaire,M. Touzeau,R. Ramos 9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials, Oct 2008, Huangshan, China Communication dans un congrès hal-00944941v1
Velocity distribution of Al sputtered atoms in an ICP reactor by laser absorption and Laser Induced Fluorescence R. Ramos,M. Touzeau,G. Cunge,N. Sadeghi 9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials (SPSM), 2008, China Communication dans un congrès hal-00398880v1
Ar Ion Sputtering of GaAs Studied by Molecular Dynamics Simulation and Laser Spectroscopy of Ga Atoms in the Gas Phase E. Despiau-Pujo,P. Chabert,R. Ramos,G. Cunge,N. Sadeghi 55th International AVS Symposium & Topical Conferences, Oct 2008, boston, United States Communication dans un congrès hal-00400658v1
Physical and chemical reactions in chlorine based etching plasmas: influence of plasma-surface interactions G. Cunge,N. Sadeghi,D. Vempaire,M. Touzeau,R. Ramos 9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials, 2008, China Communication dans un congrès hal-00397781v1
Gate Stack Patterning: challenges of the future O. R. Joubert,E. Pargon,G. Cunge,T. Chevolleau,B. Pelissieret al. 1st International Conference on Plasma-Nanotechnology & Science (IC-PLANTS), 2008, nagoya, Japan Communication dans un congrès hal-00397778v1
The challenges in gate stack patterning for the next technological nodes E. Pargon,T. Morel,E. Sungauer,A. Bazin,M. Martinet al. Gordon research conference, Plasma processing science,, 2008, United States Communication dans un congrès hal-00397773v1
Blue diode laser absorption spectroscopy of sputtered aluminium atoms R. Ramos,M. Touzeau,G. Cunge,N. Sadeghi Frontiers in Low Temperature Plasma Diagnostics VII,, 2007, United States Communication dans un congrès hal-00398863v1
Plasma etching challenges involved in gate stack patterning for 45 nm technological nodes and beyond O. R. Joubert,E. Pargon,G. Cunge,T. Chevolleau,B. Pelissieret al. 1st workshop on plasma etch and strip in microelectronic (PESM), 2007, Louvain, Belgium Communication dans un congrès hal-00397771v1
Restoring the chamber walls surfaces of plasma reactors exposed to repeated fluorine-based plasma cleans R. Ramos,G. Cunge,B. Pelissier,O. R. Joubert,T. Chevolleau 16th International Colloquium on Plasma processes (CIP), 2007, toulouse, France Communication dans un congrès hal-00398865v1
Impact of reactor walls chemical composition on radicals' densities in the chlorine based silicon etching ICP plasmas N. Sadeghi,G. Cunge,R. Ramos 18th International Symposium on Plasma Chemistry (ISPC), Aug 2007, Kyoto, Japan Communication dans un congrès hal-00944971v1
Interaction of Cl2 based plasmas with chamber walls in a silicon etching reactor G. Cunge,N. Sadeghi,R. Ramos,O. R. Joubert,M. Touzeau Frontiers in Low Temperature Plasma Diagnostics VII,, 2007, United Kingdom Communication dans un congrès hal-00397769v1
Plasma etching challenges of new materials involved in gate stack patterning for sub 45nm technological node O. R. Joubert,A. Le Gouil,R. Ramos,M. Helot,O. Luereet al. 53rd International AVS Symposium & Topical Conferences, 2006, San Francisco, United States. ⟨10.1149/MA2006-01/8/367⟩ Communication dans un congrès hal-00397753v1
Impact of chamber walls on radicals densities in Cl2 ICP plasmas G. Cunge,N. Sadeghi,R. Ramos,O. R. Joubert 53rd International AVS Symposium & Topical Conferences, 2006, san francisco, United States Communication dans un congrès hal-00400475v1
Plasma etching challenges of new materials involved in gate stack patterning for sub-45 nm technological nodes O. Joubert,A. Le Gouil,R. Ramos,M. Helot,G. Cungeet al. 209th ECS meeting, Denver, May 2006, Denver, United States Communication dans un congrès hal-00944953v1
Plasma Etching Challenges of New Materials Involved in Gate Stack Patterning for sub 45 nm Technological Nodes O. R. Joubert,A. Le Gouil,R. Ramos,M. Helot,G. Cungeet al. Proceedings of the Electrochemical. Society (209th Meeting), 2006, denver, United States Communication dans un congrès hal-00398859v1
Emerging Application of Fluorocarbon Plasmas for Integrated Circuits Fabrication T. Chevolleau,G. Cunge,Maxime Darnon,R. Ramos,L. Vallieret al. 8th International workshop on fluorocarbon plasma, 2006, autrans, France Communication dans un congrès hal-00400476v1
Metal gate stack plasma patterning studies L. Vallier,T. Chevolleau,O. R. Joubert,G. Cunge,A. Le Gouilet al. IEEE International Conference on Plasma Processes (ICOPS 06), 2006, traverse city, United States Communication dans un congrès hal-00397763v1
Understanding the impact of chamber walls during plasma etching: a key to control plasma processes in ULSI R. Ramos,G. Cunge,O. R. Joubert,M. Orlowski,T. Lill 53rd International AVS Symposium & Topical Conferences, 2006, san francisco, United States Communication dans un congrès hal-00400472v1
Plasma/reactor wall interactions in gate etching processes G. Cunge,R. Ramos,O. R. Joubert,N. Sadeghi,M. Mori 27th International symposium on dry process (DPS), 2005, jeju, South Korea Communication dans un congrès hal-00397119v1
Innovative strategy to improve the stability of plasma etching processes R. Ramos,G. Cunge,B. Pelissier,O. R. Joubert 52nd International AVS Symposium & Topical Conferences, 2005, boston, United States Communication dans un congrès hal-00400466v1

Poster de conférence (2)

Towards a practical use of sulfide solid electrolytes in all-solid-state-batteries: Impact of dry room exposure on H2S release and material properties Xavier Randrema,Ivan Leteyi Mfiban,Marine Soler,Manon Berthault,Sebastien Diryet al. GORDON CONFERENCE, Jul 2022, Ventura, United States. 2022 Poster de conférence cea-04248083v1
Progress on Pt-Salt Doped Carbon Nanotubes for Local Interconnects Jie Liang,Raphael Ramos,Jean Dijon,Hanako Okuno,Dipankar Kalitaet al. 12e Colloque National du GDR SoC/SiP, Jun 2018, Paris, France. 2018 Poster de conférence lirmm-02132496v1

Brevet (1)

PROCEDE DE FABRICATION D’UNE MEMBRANE A ELECTROLYTE Agathe Belime,M. Benwadih,R. Ramos,Quentin Berrod,Jean-Marc Zanotti France, N° de brevet: FR2002224. 2020 Brevet hal-02997972v1

Thèse (1)

Interactions entre les plasmas de gravure à couplage inductif et les parois du réacteur Raphaël Ramos Physique [physics]. Université Joseph-Fourier - Grenoble I, 2008. Français. ⟨NNT : ⟩ Thèse tel-00330664v1