Richard DAUBRIAC

Publications

Article dans une revue (11)

Evolution of the liquid/solid interface roughness in Si$_{1-x}$Ge$_x$ layers processed by nanosecond laser annealing Rémi Demoulin,Richard Daubriac,S. Kerdilès,L. Dagault,O. Adamiet al. Applied Surface Science, 2025, 684, pp.161982. ⟨10.1016/j.apsusc.2024.161982⟩ Article dans une revue hal-04821556v1
Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes Richard Monflier,Richard Daubriac,Mahmoud Haned,Toshiyuki Tabata,François Olivieret al. IEEE Transactions on Electron Devices, 2025, 72 (11), pp.5860 - 5867. ⟨10.1109/TED.2025.3614566⟩ Article dans une revue hal-04878600v2
Rapid Quantification of Threading Dislocation Networks in Topologically Insulating Bi 1− x Sb x Thin Films via Deep‐Learning Analysis of Etch Pits Leonardo Cancellara,Mohamed Ali Khaled,Richard Daubriac,Salima Fekraoui,Alexandre Arnoultet al. Advanced Engineering Materials, 2025, ⟨10.1002/adem.202501696⟩ Article dans une revue hal-05398988v1
Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A Mohamed Ali Khaled,Leonardo Cancellara,Salima Fekraoui,Richard Daubriac,François Bertranet al. ACS Applied Electronic Materials, 2024, 6 (5), pp.3771-3779. ⟨10.1021/acsaelm.4c00400⟩ Article dans une revue hal-04584442v1
Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers Y. Baron,J. Lábár,S. Lequien,B. Pécz,R. Daubriacet al. APL Materials, 2024, 12 (12), ⟨10.1063/5.0231177⟩ Article dans une revue hal-04823654v1
Laser‐Annealed SiO 2 /Si 1− x Ge x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation Damiano Ricciarelli,Jonas Müller,Guilhem Larrieu,Ioannis Deretzis,Gaetano Calogeroet al. Physica Status Solidi A (applications and materials science), 2024, 221 (24), pp.2400120. ⟨10.1002/pssa.202400120⟩ Article dans une revue cea-04769530v1
Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys Damiano Ricciarelli,Giovanni Mannino,Ioannis Deretzis,Gaetano Calogero,Giuseppe Fisicaroet al. Materials Science in Semiconductor Processing, 2023, 165, pp.107635. ⟨10.1016/j.mssp.2023.107635⟩ Article dans une revue hal-04344631v1
Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAs Dima Sadek,Richard Daubriac,Corentin Durand,Richard Monflier,Quentin Gravelieret al. Crystal Growth & Design, 2022, 22 (8), pp.5081-5091. ⟨10.1021/acs.cgd.2c00585⟩ Article dans une revue hal-03775836v1
Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing R. Daubriac,P. Acosta Alba,C. Marcenat,S. Lequien,T. Vethaaket al. ECS Journal of Solid State Science and Technology, 2021, 10 (1), pp.014004. ⟨10.1149/2162-8777/abdc41⟩ Article dans une revue hal-03121810v1
Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing R. Daubriac,P. Acosta Alba,C. Marcenat,S. Lequien,T. Vethaaket al. ECS Journal of Solid State Science and Technology, 2021, 10 (1), pp.014004. ⟨10.1149/2162-8777/abdc41⟩ Article dans une revue hal-04442429v1
A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers Richard Daubriac,Emmanuel Scheid,Hiba Rizk,Richard Monflier,Sylvain Joblotet al. Beilstein Journal of Nanotechnology, 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩ Article dans une revue hal-01921179v1

Communication dans un congrès (11)

Investigation of the enlargement of Ru grains and failure modes analysis in microsecond UV laser annealing Zeinab Chehadi,Richard Daubriac,Lu Lu,Karim Huet,Zsolt Tokeiet al. 2024 IEEE International Interconnect Technology Conference (IITC), Jun 2024, San Jose, United States. pp.1-3, ⟨10.1109/IITC61274.2024.10732322⟩ Communication dans un congrès hal-05202707v1
Epitaxial Topological Insulator Bi1 xSbx lms on GaAs substrates for Spintronic applications Mohamed Ali Khaled,Danny Petty Gweha Nyoma,Salima Fekraoui,Leonardo Cancellara,Richard Daubriacet al. Journées de la Matière Condensée, Société Française de Physique, Oct 2024, Marseille, France Communication dans un congrès hal-04949065v1
Characterization of epitaxial Bi1-xSbx topological insulator thin films on GaAs(111) substrates Salima Fekraoui,Ali Khaled Mohamed,Richard Daubriac,Quentin Gravelier,Richard Monflieret al. Journées de la Matière Condensée 2024, Société Française de Physique, Oct 2024, Marseille, France Communication dans un congrès hal-04946094v1
Study of the electrical and structural properties of Ru thin films annealed by Microsecond UV Laser Annealing for future BEOL interconnections Richard Daubriac,Leonardo Cancellara,Mohamed Ali Khaled,Lu Lu,Zeinab Chehadiet al. 2023 E-MRS Fall Meeting, Sep 2023, Warsaw, Poland Communication dans un congrès hal-04442370v1
Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser Richard Daubriac,Rémi Demoulin,Sébastien Kerdilès,P. Acosta-Alba,M. Opprechtet al. 2023 E-MRS Spring Meeting, May 2023, Strasbourg, France Communication dans un congrès hal-04442327v1
Topological insulator Bi1-xSbx films on GaAs substrates as current-induced Spin-Orbit Torques generators Mohamed Ali Khaled,Richard Daubriac,Leonardo Cancellara,Quentin Gravelier,Thomas Blonet al. 2023 E-MRS Fall Meeting, E-MRS, Sep 2023, Warsaw (Varsovie), Poland Communication dans un congrès hal-04297125v1
Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films Rémi Demoulin,Richard Daubriac,Louis Thuries,Emmanuel Scheid,Fabien Rozéet al. IEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩ Communication dans un congrès hal-03795894v1
Stress relaxation and dopant activation in nsec laser annealed SiGe Fuccio Cristiano,Richard Monflier,Richard Daubriac,Rémi Demoulin,Emmanuel Scheidet al. IWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩ Communication dans un congrès hal-03449341v1
Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect Richard Daubriac,Emmanuel Scheid,S. Joblot,R. Beneyton,P Acosta Albaet al. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain Communication dans un congrès hal-01735436v1
High performance CMOS FDSOI devices activated at low temperature L. Pasini,P. Batude,J. Lacord,M. Cassé,B. Mathieuet al. 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩ Communication dans un congrès hal-01730659v1
Differential hall characterization of shallow strained SiGe layers Richard Daubriac,Mahmoud Abou Daher,Emmanuel Scheid,Fuccio Cristiano,S. Joblotet al. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩ Communication dans un congrès hal-01730652v1

Chapitre d'ouvrage (1)

Laser ultra-doped silicon: Superconductivity and applications Francesca Chiodi,Richard Daubriac,Sébastien Kerdilès Laser Annealing Processes in Semiconductor Technology, Elsevier, pp.357-400, 2021, ⟨10.1016/B978-0-12-820255-5.00009-X⟩ Chapitre d'ouvrage hal-04442449v1

Pré-publication, Document de travail (1)

A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers Richard Daubriac,Emmanuel Scheid,S. Joblot,R. Beneyton,P Acosta Albaet al. 2018 Pré-publication, Document de travail hal-01730674v1

Thèse (1)

Caractérisation de techniques d'implantations ioniques alternatives pour l'optimisation du module source-drain de la technologie FDSOI 28nm Richard Daubriac Micro et nanotechnologies/Microélectronique. INSA de Toulouse, 2018. Français. ⟨NNT : 2018ISAT0031⟩ Thèse tel-02087031v2