Sandra Ruffenach

Identifiants chercheurs

IdHAL :

sandra-ruffenach

ORCID :

0000-0001-7667-9687

Publications

Article dans une revue (66)

Nonlinear Terahertz Electroluminescence from Dirac-Landau Polaritons B. Benhamou-Bui,C. Consejo,S. S. Krishtopenko,S. Ruffenach,C. Brayet al. Physical Review Letters, 2026, 136 (9), pp.096902. ⟨10.1103/7rcf-fd3g⟩ Article dans une revue hal-05554597v1
Spin-dependent photovoltage in graphene/MoS&lt;sub&gt;2&lt;/sub&gt;-based field-effect transistors Khalid Dinar,Juan Antonio Delgado-Notario,Cédric Bray,Kenneth Maussang,Elsa Perez-Martinet al. Physical Review Applied, 2025, 23 (4), pp.044043. ⟨10.1103/PhysRevApplied.23.044043⟩ Article dans une revue hal-05069730v1
Unveiling long-range forces in light-harvesting proteins: Pivotal roles of temperature and light Elsa Perez-Martin,Tristan Beranger,Laurent Bonnet,Frédéric Teppe,Alvydas Lisauskaset al. Science Advances , 2025, 11 (18), pp.eadv0346. ⟨10.1126/sciadv.adv0346⟩ Article dans une revue hal-05069386v1
Multiprobe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence Salah Benlemqwanssa,Sergey Krishtopenko,Manuel Meyer,Laurent Bonnet,Adriana Wolfet al. Physical Review Applied, 2024, 22 (6), pp.064059. ⟨10.1103/PhysRevApplied.22.064059⟩ Article dans une revue hal-04881971v1
Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions Benjamin Benhamou-Bui,Christophe Consejo,Sergey Krishtopenko,Maria Szoła,Kenneth Maussanget al. APL Photonics, 2023, 8 (11), pp.244-249. ⟨10.1063/5.0168578⟩ Article dans une revue hal-04304313v1
Terahertz cyclotron emission from two-dimensional Dirac fermions S. Gebert,C. Consejo,S. Krishtopenko,S. Ruffenach,M. Szolaet al. Nature Photonics, 2023, 17, pp.244-249. ⟨10.1038/s41566-022-01129-1⟩ Article dans une revue hal-03940773v2
Experimental evidence for long-distance electrodynamic intermolecular forces Mathias Lechelon,Yoann Meriguet,Matteo Gori,Sandra Ruffenach,Ilaria Nardecchiaet al. Science Advances , 2022, 8 (7), pp.eabl5855. ⟨10.1126/sciadv.abl5855⟩ Article dans une revue hal-03259009v5
Temperature-dependent zero-field splittings in graphene Cédric Bray,Kenneth Maussang,Christophe Consejo,Juan Antonio Delgado-Notario,Sergey Krishtopenkoet al. Physical Review B, 2022, 106 (24), pp.245141. ⟨10.1103/PhysRevB.106.245141⟩ Article dans une revue hal-03925414v1
Large inverted band gap in strained three-layer InAs/GaInSb quantum wells Colin Avogadri,Sébastian Gebert,Sergey Krishtopenko,Ivanovitch Castillo Arvelo,Christophe Consejoet al. Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩ Article dans une revue hal-03939599v2
Effects of the Electron-Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure Leonid S Bovkun,Anton V. Ikonnikov,Sergey Krishtopenko,Vladimir y Aleshkin,Maksim Zholudevet al. JETP Letters, 2020, 112 (8), pp.508-512. ⟨10.1134/S0021364020200059⟩ Article dans une revue hal-03351532v1
Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations Sarah Mantion,Colin Avogadri,Sergey S. Krishtopenko,Sébastian Gebert,Sandra Ruffenachet al. Physical Review B, 2020, 102 (7), pp.075302. ⟨10.1103/PhysRevB.102.075302⟩ Article dans une revue hal-02919868v1
Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells Sergey S. Krishtopenko,Aleksandr Kadykov,S. Gebert,Sandra Ruffenach,Christophe Consejoet al. Physical Review B, 2020, 102 (4), pp.041404. ⟨10.1103/PhysRevB.102.041404⟩ Article dans une revue hal-02919862v1
Advances in Physics of Semiconductors Sandra Ruffenach,Maria Tchernycheva Annalen der Physik, 2019, 531 (6), pp.1900217. ⟨10.1002/andp.201900217⟩ Article dans une revue hal-05085734v1
Massless Dirac fermions in III-V semiconductor quantum wells Sergey S. Krishtopenko,W. Desrat,K. Spirin,C. Consejo,S. Ruffenachet al. Physical Review B, 2019, 99 (12), pp.121405. ⟨10.1103/PhysRevB.99.121405⟩ Article dans une revue hal-02072785v1
Experimental Observation of Temperature-Driven Topological Phase Transition in HgTe/CdHgTe Quantum Wells Maksim Zholudev,Aleksandr Kadykov,Mikhail A Fadeev,Michal Marcinkiewicz,Sandra Ruffenachet al. Condensed Matter, 2019, 4 (1), pp.27. ⟨10.3390/condmat4010027⟩ Article dans une revue hal-02072773v1
Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well Sergey S. Krishtopenko,Sandra Ruffenach,Fernando Gonzalez-Posada,Christophe Consejo,Wilfried Desratet al. JETP Letters, 2019, 109 (2), pp.96-101. ⟨10.1134/S0021364019020085⟩ Article dans une revue hal-02157723v1
Band splitting in Cd3As2 measured by magnetotransport Wilfried Desrat,Sergey S. Krishtopenko,B. A. Piot,M. Orlita,Christophe Consejoet al. Physical Review B, 2018, 97 (24), pp.245203. ⟨10.1103/PhysRevB.97.245203⟩ Article dans une revue hal-01827025v1
Temperature-Induced Topological Phase Transition in HgTe Quantum Wells Aleksandr Kadykov,Sergey S. Krishtopenko,Benoit Jouault,Wilfried Desrat,Wojciech Knapet al. Physical Review Letters, 2018, 120 (8), pp.086401. ⟨10.1103/PhysRevLett.120.086401⟩ Article dans une revue hal-01740166v1
Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well Sergey S. Krishtopenko,Sandra Ruffenach,F. Gonzalez-Posada,G. Boissier,M. Marcinkiewiczet al. Physical Review B, 2018, 97 (24), pp.245419. ⟨10.1103/PhysRevB.97.245419⟩ Article dans une revue hal-01862289v1
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells Sergey S. Krishtopenko,A. V. Ikonnikov,K. V. Maremyanin,L. S. Bovkun,K. E. Spirinet al. Fizika i tekhnika poluprovodnicov / Semiconductors, 2017, 51 (1), pp.38-42. ⟨10.1134/S1063782617010109⟩ Article dans une revue hal-01523220v1
Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs &quot;Three-Layer&quot; Gapless Quantum Wells Sandra Ruffenach,Sergey S. Krishtopenko,L. S. Bovkun,A. V. Ikonnikov,M. Marcinkiewiczet al. JETP Letters, 2017, 106 (11), pp.727-732. ⟨10.1134/S0021364017230102⟩ Article dans une revue hal-01830516v1
Temperature-driven single-valley Dirac fermions in HgTe quantum wells M. Marcinkiewicz,Sandra Ruffenach,Sergey S. Krishtopenko,Aleksandr Kadykov,Christophe Consejoet al. Physical Review B, 2017, 96 (3), pp.035405. ⟨10.1103/PhysRevB.96.035405⟩ Article dans une revue hal-01583239v1
HgCdTe-based heterostructures for terahertz photonics Sandra Ruffenach,Aleksandr Kadykov,V. V. Rumyantsev,Jeremie Torres,Dominique Coquillatet al. APL Materials, 2017, 5 (3), pp.035503. ⟨10.1063/1.4977781⟩ Article dans une revue hal-01523131v1
Temperature-dependent magnetospectroscopy of HgTe quantum wells A. V. Ikonnikov,Sergey S. Krishtopenko,Oleksiy Drachenko,Michel Goiran,Maksim Zholudevet al. Physical Review B, 2016, 94 (15), pp.155421. ⟨10.1103/PhysRevB.94.155421⟩ Article dans une revue hal-01397638v1
Terahertz imaging of Landau levels in HgTe-based topological insulators Aleksandr M. Kadykov,Jeremie Torres,Sergey S. Krishtopenko,Christophe Consejo,Sandra Ruffenachet al. Applied Physics Letters, 2016, 108 (26), pp.262102. ⟨10.1063/1.4955018⟩ Article dans une revue hal-01358769v1
Temperature-driven massless Kane fermions in HgCdTe crystals Frederic Teppe,M. Marcinkiewicz,Sergey S. Krishtopenko,Sandra Ruffenach,Christophe Consejoet al. Nature Communications, 2016, 7, pp.12576. ⟨10.1038/ncomms12576⟩ Article dans une revue hal-01391282v1
Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors Aleksandr Kadykov,Frederic Teppe,Christophe Consejo,L. Viti,M. S. Vitielloet al. Applied Physics Letters, 2015, 107 (15), pp.152101. ⟨10.1063/1.4932943⟩ Article dans une revue hal-01237406v1
Anticrossing of Landau Levels in HgTe/CdHgTe (013) Quantum Wells with an Inverted Band Structure Maksim Zholudev,Frederic Teppe,S. V. Morozov,M. Orlita,Christophe Consejoet al. JETP Letters, 2015, 100 (12), pp.790-794. ⟨10.1134/S0021364014240175⟩ Article dans une revue hal-01200644v1
Influence of the growth rate on the morphology of electrodeposited zinc oxide Yoann Robin,Matthieu Moret,Sandra Ruffenach,Roger Aulombard,Olivier Briot Superlattices and Microstructures, 2014, 73, pp.281. ⟨10.1016/j.spmi.2014.05.032⟩ Article dans une revue istex hal-01009319v1
Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities B. de Vries,U. Wahl,Sandra Ruffenach,Olivier Briot,A. Vantomme Applied Physics Letters, 2013, 103 (17), pp.172108. ⟨10.1063/1.4826705⟩ Article dans une revue hal-00914581v1
Investigation of indium nitride for micro-nanotechnology Anisha Gokarna,Jean-Francois Lampin,Dominique Vignaud,El Hadj Dogheche,Didier Decosteret al. International Journal of Nanotechnology, 2012, 9 (10-12), pp.900-906. ⟨10.1504/IJNT.2012.049454⟩ Article dans une revue hal-00787438v1
Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization Sergey V. Ovsyannikov,Vladimir V. Shchennikov,Alexander E. Karkin,Alain Polian,Olivier Briotet al. Applied Physics Letters, 2010, 97, pp.032105. ⟨10.1063/1.3466913⟩ Article dans une revue hal-00516955v1
Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase D. Gonzalez,J. G. Lozano,M. Herrera,F. M. Morales,Sandra Ruffenachet al. Nanotechnology, 2010, 21, pp.185706. ⟨10.1088/0957-4484/21/18/185706⟩ Article dans une revue hal-00539809v1
Phages recognizing the Indium Nitride semiconductor surface via their peptides. Elias Estephan,Marie-Belle Saab,Marta Martin,Christian Larroque,Frédéric Cuisinieret al. Journal of Peptide Science, 2010, DOI 10.1002/psc.1315. ⟨10.1002/psc.1315⟩ Article dans une revue istex hal-00526584v1
Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy Sandra Ruffenach,Matthieu Moret,Olivier Briot,Bernard Gil Applied Physics Letters, 2009, 95, pp.042102. ⟨10.1063/1.3189212⟩ Article dans une revue hal-00539828v1
Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties Matthieu Moret,Sandra Ruffenach,Olivier Briot,B. Gil European Physical Journal: Applied Physics, 2009, 45 (2), pp.20305 Article dans une revue hal-00390126v1
Structural changes during the natural aging process of InN quantum dots David Gonzalez,J.G. Lozano,M. Herrera,N.D. Browning,Sandra Ruffenachet al. Journal of Applied Physics, 2009, 105, pp.013527. ⟨10.1063/1.3010309⟩ Article dans une revue hal-00390304v1
Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties M. Moret,S. Ruffenach,O. Briot,B. Gil European Physical Journal: Applied Physics, 2009, 45 (2), pp.1. ⟨10.1051/epjap/2009007⟩ Article dans une revue hal-00480143v1
The epitaxial growth of indium nitride using berlinite (AlPO4) and other piezoelectric crystals of the quartz family as substrates Matthieu Moret,Sandra Ruffenach,Olivier Briot,Bernard Gil,M. Pauthe Applied Physics Letters, 2009, 95, pp.041910. ⟨10.1063/1.3193655⟩ Article dans une revue hal-00540227v1
The determination of the bulk residual doping in indium nitride films using photoluminescence Olivier Briot,Matthieu Moret,Sandra Ruffenach,Bernard Gil Applied Physics Letters, 2009, 95, pp.031910. ⟨10.1063/1.3187914⟩ Article dans une revue hal-00540269v1
Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots J. G. Lozano,A. M. Sanchez,R. Garcia,D. Gonzalez,M. Herreraet al. Applied Physics Letters, 2007, 91, pp.071915. ⟨10.1063/1.2770776⟩ Article dans une revue hal-00542123v1
Control of InN quantum dot density using rare gases in metal organic vapor phase epitaxy Sandra Ruffenach,Olivier Briot,Matthieu Moret,Bernard Gil Applied Physics Letters, 2007, 90, pp.153102. ⟨10.1063/1.2721124⟩ Article dans une revue hal-00542122v1
Initial growth stages of MOVPE InN studied by AFM and specular reflectivity A. van Der Lee,F. Salah,B. Harzallah,S. Ruffenach,O. Briot Physica Status Solidi C: Current Topics in Solid State Physics, 2007, 4, pp.150-153. ⟨10.1002/pssc.200673536⟩ Article dans une revue istex hal-00128282v1
Strain relief analysis of InN quantum dots grown on GaN Juan G. Lozano,Ana M. Sanchez,Rafael Garcia,Sandra Ruffenach,Olivier Briotet al. Nanoscale Research Letters, 2007, 2 (9), pp.442-446. ⟨10.1007/s11671-007-9080-6⟩ Article dans une revue hal-00390128v1
Strain mapping at the atomic scale in highly mismatched heterointerfaces Ana Maria Sanchez,Juan Gabriel Lozano,Rafael Garcia,Miriam Herrera,Sandra Ruffenachet al. Advanced Functional Materials, 2007, 17, pp.2588-2593. ⟨10.1002/adfm.200600813⟩ Article dans une revue istex hal-00540273v1
Misfit relaxation of InN quantum dots: Effect of the GaN capping layer Jg Lozano,Am Sanchez,R. Garcia,D. Gonzalez,Olivier Briotet al. Applied Physics Letters, 2006, 88, pp.151913. ⟨10.1063/1.2195642⟩ Article dans une revue hal-00540396v1
Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing E. Nogales,Rw Martin,Kp O'Donnell,K. Lorenz,E. Alveset al. Applied Physics Letters, 2006, 88, pp.031902. ⟨10.1063/1.2162797⟩ Article dans une revue hal-00540370v1
Raman scattering study of wurtzite and rocksalt InN under high pressure. C. Pinquier,François Demangeot,J. Frandon,J.C. Chervin,A. Polianet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.115211. ⟨10.1103/PhysRevB.73.115211⟩ Article dans une revue hal-00022132v1
Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy A. Pelli,K. Saarinen,F. Tuomisto,Sandra Ruffenach,Olivier Briot Applied Physics Letters, 2006, 89, pp.011911. ⟨10.1063/1.2219335⟩ Article dans une revue hal-00540405v1
Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms François Demangeot,C. Pinquier,J. Frandon,M. Gaio,Olivier Briotet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.104305. ⟨10.1103/PhysRevB.71.104305⟩ Article dans une revue hal-00540408v1
Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy Jg Lozano,Am Sanchez,R. Garcia,D. Gonzalez,D. Araujoet al. Applied Physics Letters, 2005, 87 (26), pp.263104. ⟨10.1063/1.2152110⟩ Article dans une revue hal-00390132v1
Selectively excited photoluminescence from Eu-implanted GaN K. Wang,Rw Martin,Kp O'Donnell,V. Katchkanov,E. Nogaleset al. Applied Physics Letters, 2005, 87 (11), pp.112107. ⟨10.1063/1.2045551⟩ Article dans une revue hal-00390133v1
Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition R. Intartaglia,B. Maleyre,Sandra Ruffenach,Olivier Briot,T. Taliercioet al. Applied Physics Letters, 2005, 86, pp.142104. ⟨10.1063/1.1897428⟩ Article dans une revue hal-00540409v1
Terahertz investigation of high quality indium nitride epitaxial layers Ym Meziani,Benedicte Maleyre,Ml Sadowski,Sandra Ruffenach,Olivier Briotet al. Physica Status Solidi A (applications and materials science), 2005, 202, pp.590-592. ⟨10.1002/pssa.200460434⟩ Article dans une revue istex hal-00540412v1
Raman scattering in hexagonal InN under high pressure C. Pinquier,François Demangeot,J. Frandon,Jw Pomeroy,M. Kuballet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.113202. ⟨10.1103/PhysRevB.70.113202⟩ Article dans une revue hal-00539950v1
Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOVPE B. Maleyre,S. Ruffenach,O. Briot,A. van Der Lee Superlattices and Microstructures, 2004, 36, pp.527-535. ⟨10.1016/j.spmi.2004.09.052⟩ Article dans une revue istex hal-00164212v1
High-temperature annealing and optical activation of Eu-implanted GaN K. Lorenz,U. Wahl,E. Alves,S. Dalmasso,Rw Martinet al. Applied Physics Letters, 2004, 85, pp.2712-2714. ⟨10.1063/1.1801686⟩ Article dans une revue hal-00539948v1
Indium nitride quantum dots grown by metalorganic vapor phase epitaxy Olivier Briot,B. Maleyre,Sandra Ruffenach Applied Physics Letters, 2003, 83, pp.2919-2921. ⟨10.1063/1.1613044⟩ Article dans une revue hal-00540467v1
Raman scattering in large single indium nitride dots: Correlation between morphology and strain François Demangeot,J. Frandon,C. Pinquier,M. Caumont,Olivier Briotet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.245308. ⟨10.1103/PhysRevB.68.245308⟩ Article dans une revue hal-00540458v1
Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal Jeremi Torres,Dominique Coquillat,Rene Legros,Jean-Paul Lascaray,Sandra Ruffenachet al. physica status solidi (b), 2003, 240, pp.455-458. ⟨10.1002/pssb.200303309⟩ Article dans une revue istex hal-00540469v1
Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering M. Kuball,François Demangeot,J. Frandon,Ma Renucci,H. Sandset al. Applied Physics Letters, 1999, 74, pp.549-551 Article dans une revue hal-00545869v1
Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions François Demangeot,Jesse Groenen,J. Frandon,Ma Renucci,Olivier Briotet al. Applied Physics Letters, 1998, 72, pp.2674-2676 Article dans une revue hal-00545870v1
The exciton-polariton effect on the photoluminescence of GaN on sapphire Bernard Gil,Sandra Ruffenach,Olivier Briot Solid State Communications, 1997, 104, pp.267-270 Article dans une revue hal-00545875v1
Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN Olivier Briot,Sandra Ruffenach,Roger Aulombard Applied Physics Letters, 1997, 71, pp.1990-1992 Article dans une revue hal-00545876v1
Comparison of luminescence and physical morphologies of GaN epilayers C. Trager-Cowan,Pg Middleton,Kp O'Donnell,Sandra Ruffenach,Olivier Briot Materials Science and Engineering: B, 1997, 50, pp.161-164 Article dans une revue hal-00545874v1
MOVPE growth and characterization of AlxGa1-xN Sandra Ruffenach,Olivier Briot,Jl Rouviere,Bernard Gil,Roger Aulombard Materials Science and Engineering: B, 1997, 50, pp.219-222 Article dans une revue hal-00546775v1

Communication dans un congrès (73)

Investigation of the interactions between biomolecules : a crossroad of physics, electronics, chemistry and biology Mathias Lechelon,Yoann Meriguet,Matteo Gori,Sandra Ruffenach,Ilaria Nardecchiaet al. 1st International Conference on Physics of Semiconductor Devices, Renewable Energies and Environment (ICPSDREE 2022), Mebarka Daoudi, Nov 2024, Béchar, Algeria Communication dans un congrès hal-05002411v1
Temperature dependance of Intrinsic Spin Orbit Coupling Gap in Graphene probed by Terahertz photoconductivity Kenneth Maussang,Khalid Dinar,Cédric Bray,Christophe Consejo,Juan Antonio Delgado-Notarioet al. 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montréal, Canada. ⟨10.1109/irmmw-thz57677.2023.10299006⟩ Communication dans un congrès hal-04304454v1
Tunable Terahertz Cyclotron Emission from Two-Dimensional Dirac Fermions Benjamin Benhamou-Bui,Sébastian Gebert,Maria Szoła,Christophe Consejo,Sergey Krishtopenkoet al. 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2023), Sep 2023, Montréal, Canada. pp.1-2, ⟨10.1109/irmmw-thz57677.2023.10298862⟩ Communication dans un congrès hal-04304349v1
Nonequilibrium Spectroscopies of Biomolecules: Evidence of Long-Range Electrodynamic Forces Mathias Lechelon,Yoann Meriguet,Matteo Gori,Sandra Ruffenach,Ilaria Nardecchiaet al. 22nd International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Prof. Tilmann Kuhn, Aug 2023, Münster, Germany Communication dans un congrès hal-05002385v1
Transition from brownian to anomalous diffusion ofbiomolecules as a signature of long-range electrodynamic interactions Tristan Beranger,Matteo Gori,Sandra Ruffenach,Elena Floriani,Frédéric Teppeet al. 26th International Conference on Noise and Fluctuations, Christoforos Theodorou, Oct 2023, Grenoble, France Communication dans un congrès hal-05002375v1
Terahertz and fluorescence-correlation spectroscopies: two powerful tools for the investigation of biomolecules interactions Mathias Lechelon,Yoann Meriguet,Matteo Gori,Sandra Ruffenach,Ilaria Nardecchiaet al. Recent trends in optical materials and photonic devices, Dec 2022, Bilaspur, India Communication dans un congrès hal-05002417v1
Current-driven THz emission from AlGaN/GaN grating gate structures in the magnetic field P. Sai,M. Sakowicz,C. Consejo,S. Ruffenach,Y. Krupkoet al. 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, France. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9896031⟩ Communication dans un congrès hal-03824957v1
Long-range electrodynamic interactions between proteins assessed by THz spectroscopy Sandra Ruffenach,Mathias Lechelon,Yoann Meriguet,Matteo Gori,Ilaria Nardecchiaet al. Terahertz Emitters, Receivers, and Applications XIII, Aug 2022, San Diego, France. pp.122300H, ⟨10.1117/12.2641104⟩ Communication dans un congrès hal-03824953v1
Temperature-dependent low-frequency vibrational spectra of sodium magnesium chlorophyllin Dominique Coquillat,Cédric Bray,Emma O'Connor,Etienne Brouillet,Yoann Meriguetet al. 47th International conference on infrared, millimeter and terahertz waves (IRMMW-THZ 2022), 2022, Delft, France. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9895499⟩ Communication dans un congrès hal-03824965v1
THz spectroscopy to probe long-range electrodynamic interactions between proteins Sandra Ruffenach,Mathias Lechelon,Yoann Meriguet,Matteo Gori,Ilaria Nardecchiaet al. Terahertz Emitters, Receivers, and Applications XIII, Aug 2022, Delft, Netherlands. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9896089⟩ Communication dans un congrès hal-04919648v1
Spectroscopy of temperature-driven single valley Dirac fermions in HgTe/CdHgTe quantum wells A. M. Kadykov,Sergey S. Krishtopenko,Benoit Jouault,W. Desrat,M. Marcinkiewiczet al. 2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), Sep 2018, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. ⟨10.1109/IRMMW-THz.2018.8510039⟩ Communication dans un congrès hal-03037689v1
High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors Dominique Coquillat,V. Nodjiadjim,S. Blin,A. Konczykowska,Nina Diakonovaet al. FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES, 2017, Sendai, Japan. pp.1-9, ⟨10.1142/S0129156416400115⟩ Communication dans un congrès hal-01555388v1
Terahertz probing of temperature-driven topological phase transition in HgCdTe bulk crystal and HgTe Quantum Well Sandra Ruffenach International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2017, Cancun, Mexico Communication dans un congrès hal-01909294v1
Magnetospectroscopy of double HgTe/CdHgTe quantum wells L. S. Bovkun,Sergey S. Krishtopenko,A. V. Ikonnikov,V. Ya. Aleshkin,Aleksandr Kadykovet al. XX International Symposium “Nanophysics and Nanoelectronics”, Mar 2016, Nizhny Novgorod, Russia. pp.1532-1538, ⟨10.1134/S1063782616110063⟩ Communication dans un congrès hal-01406356v1
Observation of topological phase transition by terahertz photoconductivity in HgTe-based transistors Aleksandr Kadykov,Christophe Consejo,M. Marcinkiewicz,L. Viti,M. S. Vitielloet al. 17th International Conference on II-VI Compounds, 2016, Paris, France. pp.534-537, ⟨10.1002/pssc.201510264⟩ Communication dans un congrès istex hal-01417831v1
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Terahertz excitations in HgTe-based field effect transistors Aleksandr Kadykov,Christophe Consejo,Frederic Teppe,Wilfried Desrat,L. Vitiet al. 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012009, ⟨10.1088/1742-6596/647/1/012009⟩ Communication dans un congrès hal-01249955v1
Experimental and theoretical investigations of the responsivity of field effect transistors based Terahertz detectors versus substrate thickness Dominique Coquillat,J. Marczewski,P. Kopyt,Nina Diakonova,Sandra Ruffenachet al. 2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015, Hong Kong, China Communication dans un congrès hal-01336481v1
Sub-terahertz photoconductivity of Hg x Cd 1− x Te crystals with composition close to semiconductor-to-semimetal topological transition Christophe Consejo,Frederic Teppe,Nina Diakonova,Wilfried Desrat,Sandra Ruffenachet al. Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on, Sep 2014, Tucson, United States. pp.1 Communication dans un congrès hal-01265668v1
Annealing effect of CdS thin films deposited by chemical bath deposition on different substrates Yoann Robin,Matthieu Moret,Sandra Ruffenach,Roger Aulombard,Olivier Briot Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, Jun 2013, Tampa, United States. pp.1173, ⟨10.1109/PVSC.2013.6744349⟩ Communication dans un congrès hal-01009387v1
(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum Sandra Ruffenach,Yoann Robin,Matthieu Moret,Roger Aulombard,Olivier Briot E-MRS Spring Meeting, May 2012, Strasbourg, France. pp.143-147, ⟨10.1016/j.tsf.2013.01.053⟩ Communication dans un congrès istex hal-00820323v1
Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN V. Darakchieva,K. Lorenz,M. -Y. Xie,E. Alves,W. J. Schaffet al. E-MRS ICAM IUMRS 2011 Spring Meeting – Symposium H, May 2011, Nice, France. pp.91-94, ⟨10.1002/pssa.201100175⟩ Communication dans un congrès istex hal-00698910v1
Phages recognizing the Indium Nitride semiconductor surface via their peptides Elias Estephan,Marie-Belle Saab,Marta Martin-Fernandez,Christian Larroque,Frederic J. G. Cuisinieret al. E-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147 Communication dans un congrès hal-00633883v1
MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate Matthieu Moret,Sandra Ruffenach,Olivier Briot,Bernard Gil ISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩ Communication dans un congrès istex hal-00633882v1
Managing gas purity in epitaxial growth M. Succi,S. Pirola,Sandra Ruffenach,Olivier Briot Italian Crystal Growth Conference (ICGC 2010), Nov 2010, Parme, Italy. pp.809-812, ⟨10.1002/crat.201000610⟩ Communication dans un congrès istex hal-00633875v1
Free electron properties and hydrogen in InN grown by MOVPE V. Darakchieva,M. -Y. Xie,D. Rogalla,H. -W. Becker,K. Lorenzet al. ISGN3, Jul 2010, France. pp.1179-1182, ⟨10.1002/pssa.201001151⟩ Communication dans un congrès istex hal-00633877v1
The influence of thermal annealing on optical and electrical properties indium nitride films grown by MOVPE Sandra Ruffenach SPIE Photonics West Opto, Jan 2010, San Francisco, United States Communication dans un congrès hal-00809370v1
MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire Matthieu Moret,Sandra Ruffenach,Olivier Briot,Bernard Gil Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.24-28 Communication dans un congrès hal-00540220v1
Recent advances in the MOVPE growth of indium nitride Sandra Ruffenach,Matthieu Moret,Olivier Briot,Bernard Gil Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.9-18 Communication dans un congrès hal-00540219v1
Peptides recognizing the InN semiconductor surface Elias Estephan,Marie-Belle Saab,Christian Larroque,Frédéric Cuisinier,Olivier Briotet al. EMRS, Jun 2010, Strasbourg, France Communication dans un congrès hal-00526767v1
Natural oxidation of InN quantum dots: the role of cubic InN D. Gonzalez,Jg. Lozano,M. Herrera,M.D. Browning,Sandra Ruffenachet al. EMRS Spring Meeting 2009, Jun 2009, Strasbourg, France. pp.9 Communication dans un congrès hal-00546122v1
Alternative precursors for MOVPE growth of InN and GaN at low temperature Sandra Ruffenach,Matthieu Moret,Olivier Briot,Bernard Gil,Christoph Giesenet al. 2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩ Communication dans un congrès istex hal-00390309v1
Investigation on low band gap nitride materials for micro- nanotechnology El Hadj Dogheche,A. Gokarna,Didier Decoster,S. Ruffenach,O. Briot Indo-French Workshop on Nanosciences and Nanotechnology, 2009, Delhi, India Communication dans un congrès hal-00575298v1
InN excitonic deformation potentials determined experimentally Bernard Gil,Olivier Briot,Matthieu Moret,Sandra Ruffenach,Christoph Giesenet al. 2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩ Communication dans un congrès istex hal-00390295v1
Recent advances in the MOVPE growth of Indium Nitride Sandra Ruffenach E-MRS Spring Meeting, Jun 2009, Strasbourg, France Communication dans un congrès hal-00807792v1
MOVPE growth of InN buffer layers on sapphire Olivier Briot,Sandra Ruffenach,Matthieu Moret,Bernard Gil,Christoph Giesenet al. 2nd International Symposium on the gGrowth of III-Nitrides, Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2787, ⟨10.1016/j.jcrysgro.2009.01.008⟩ Communication dans un congrès istex hal-00390306v1
Growth of InN films and nanostructures by MOVPE Olivier Briot,Sandra Ruffenach,Matthieu Moret,Bernard Gil,Christoph Giesenet al. 2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2761, ⟨10.1016/j.jcrysgro.2009.01.037⟩ Communication dans un congrès istex hal-00390294v1
Optical, structural investigations and band-gap bowing parameter of GaInN alloys Matthieu Moret,Bernard Gil,Sandra Ruffenach,Olivier Briot,Christoph Giesenet al. 2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2795, ⟨10.1016/j.jcrysgro.2009.01.009⟩ Communication dans un congrès istex hal-00390296v1
Superconductivity of InN as an intrinsic property T. Inushima,Duncan Kennedy Maude,N. Kato,H. Lu,W.J. Schaffet al. 28th International Conference on the Physics of Semiconductors, Jul 2006, Austria. pp.137, ⟨10.1063/1.2729807⟩ Communication dans un congrès hal-00546032v1
Initial growth stages of MOVPE InN studied by AFM and specular reflectivity Arie van Der Lee,F. Salah,B. Harzallah,Sandra Ruffenach,Olivier Briot 6th International Symposium on Blue Laser and Light Emitting Diodes, May 2006, Montpellier, France. pp.150 Communication dans un congrès hal-00390130v1
Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy J. G. Lozano,D. Gonzalez,A. M. Sanchez,D. Araujo,Sandra Ruffenachet al. 6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1687-1690 Communication dans un congrès hal-00546075v1
Characterization of the blue emission of Tm/Er co-implanted GaN I. S. Roqan,C. Trager-Cowan,B. Hourahine,K. Lorenz,E. Nogaleset al. Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Nov 2005, Boston (MA), United States. pp.599-604 Communication dans un congrès hal-00546130v1
A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN E. Nogales,K. Lorenz,K. Wang,I.S. Roqan,Roland Martinet al. MRS Fall Meeting - GaN, AlN, InN and Related Materials Symposium, Nov 2005, Boston, United States. pp.625 Communication dans un congrès hal-00546139v1
Superconductivity of InN with a well defined Fermi surface T. Inushima,N. Kato,Duncan Kennedy Maude,Hai Lu,W. J. Schaffet al. 6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1679-1686 Communication dans un congrès hal-00540403v1
Optical properties of high-temperature annealed Eu-implanted GaN K. Wang,Rw Martin,E. Nogales,V. Katchkanov,Kp O'Donnellet al. Meeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.797-801 Communication dans un congrès hal-00540398v1
High temperature annealing of rare earth implanted GaN films: Structural and optical properties K. Lorenz,U. Wahl,E. Alves,E. Nogales,S. Dalmassoet al. Meeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.750-758 Communication dans un congrès hal-00540402v1
Optical investigations on si-doped InN films B. Maleyre,Olivier Briot,Sandra Ruffenach,Bernard Gil 7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1379-1383 Communication dans un congrès hal-00540416v1
Growth of InN quantum dots by MOVPE Sandra Ruffenach,Benedicte Maleyre,Olivier Briot,Bernard Gil 4th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4), Jun 2004, St Petersburg (RUSSIA), Russia. pp.826-832 Communication dans un congrès hal-00540424v1
Growth Studies and Nanoscale Strain Profiles of InN Quantum Dots Olivier Briot,Sandra Ruffenach,Bernard Gil MRS Fall Meeting, Symposium FF, Nov 2005, Boston, United States Communication dans un congrès hal-00390297v1
Growth and properties of Indium nitride thin films and InN nanostructures Olivier Briot,Sandra Ruffenach,Bernard Gil 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society, Oct 2005, Sydney (AUSTRALIA), Australia. pp.856-857 Communication dans un congrès hal-00390131v1
Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVD Benedicte Maleyre,Sandra Ruffenach,Olivier Briot,Bernard Gil,A. van Der Lee International Workshop on Nitrides Semiconductors (IWN 2004), Jul 2004, Pittsburgh (PA), United States. pp.2309-2315 Communication dans un congrès hal-00540427v1
The value of the direct bandgap of InN: a re-examination Olivier Briot,Benedicte Maleyre,Sandra Ruffenach,Bernard Gil,C. Pinquieret al. 3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1425-1428 Communication dans un congrès hal-00540437v1
Growth and characterisation of Eu doped GaN thin films G. Halambalakis,N. Rousseau,Olivier Briot,Sandra Ruffenach,Roger Aulombardet al. Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.721-728 Communication dans un congrès hal-00540441v1
MOVPE growth of InN films and quantum dots W. Maleyre,Olivier Briot,Sandra Ruffenach 1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.15-21 Communication dans un congrès hal-00539952v1
UV photoreflectance for wide band gap nitride characterization C. Bru-Chevallier,S. Fanget,G. Guillot,Sandra Ruffenach,Olivier Briot Symposium on Optical and X-Ray Metrology for Advanced Device Materials Characterization, Jun 2003, Strasbourg (FRANCE), France. pp.75-78 Communication dans un congrès hal-00540433v1
Growth of InN layers by MOVPE using different substrates B. Maleyre,Sandra Ruffenach,Olivier Briot,Bernard Gil,A. van Der Lee Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.517-526 Communication dans un congrès hal-00540449v1
Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVD B. Maleyre,Sandra Ruffenach,Olivier Briot,A. van Der Lee Spring Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.527-535 Communication dans un congrès hal-00540446v1
Amorphisation of GaN during processing with rare earth ion beams K. Lorenz,U. Wahl,E. Alves,T. Wojtowicz,P. Ruteranaet al. Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.737-745 Communication dans un congrès hal-00540440v1
Raman scattering in InN films and nanostructures C. Pinquier,François Demangeot,J. Frandon,Olivier Briot,B. Maleyreet al. Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.581-589 Communication dans un congrès hal-00540444v1
Strain-induced correlations between the phonon frequencies of indium nitride Olivier Briot,Bernard Gil,B. Maleyre,Sandra Ruffenach,C. Pinquieret al. 3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1420-1424 Communication dans un congrès hal-00539944v1
Absorption and Raman scattering processes in InN films and dots Olivier Briot,B. Maleyre,Sandra Ruffenach,Bernard Gil,C. Pinquieret al. 1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.22-28 Communication dans un congrès hal-00539955v1
Equifrequency surfaces in GaN/sapphire photonic crystals D. Peyrade,J. Torres,D. Coquillat,R. Legros,J.P Lascarayet al. International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), Jul 2002, TOULOUSE (FRANCE), France. pp.423-425 Communication dans un congrès hal-00477213v1
Modeling of nitride semiconductor based double heterostructure tunnel diodes Matthieu Moret,Sandra Ruffenach,Olivier Briot,Roger Aulombard Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.227-232 Communication dans un congrès hal-00540478v1
High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications. Matthieu Moret,Sandra Ruffenach,Olivier Briot,Bernard Gil,Roger Aulombard Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.233-238 Communication dans un congrès hal-00540477v1
Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications Olivier Briot,Benedicte Maleyre,Sandra Ruffenach,C. Pinquier,François Demangeotet al. 5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, NARA (JAPAN), Japan. pp.2851-2854 Communication dans un congrès hal-00539936v1
Modeling of the incorporation of aluminum in Ga1-xAlxM (M=As or N) alloys grown by MOCVD Sandra Ruffenach,Olivier Briot,Bernard Gil,Roger Aulombard 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM, Sweden. pp.1153-1156 Communication dans un congrès hal-00546769v1
The exciton-polariton effect on the fluorescence properties of GaN on sapphire Bernard Gil,A. Hoffmann,Sandra Ruffenach,L. Eckey,Olivier Briotet al. 2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY, Japan. pp.639-643 Communication dans un congrès hal-00545873v1
Characterization of ALN buffer layers on (0001)-sapphire substrates Ym Le Vaillant,R. Bisaro,J. Olivier,O. Durand,Jy Dubozet al. 2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY (JAPAN), Japan. pp.282-286 Communication dans un congrès hal-00546761v1

Brevet (11)

Indium Nitride Layer production Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. N° de brevet: JP2008513327. 2008 Brevet hal-00390338v1
Method for the growth of Indium nitride Sandra Ruffenach,Olivier Briot,Bernard Gil N° de brevet: WO2008009805. 2008 Brevet hal-00390341v1
Nouveau Procédé pour la croissance de nitrures d'éléments du groupe IIIb Sandra Ruffenach,Olivier Briot,Bernard Gil N° de brevet: FR2904008. 2008 Brevet hal-00390340v1
Indium Nitride Layer production Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. Patent n° : US2007269965. 2007 Brevet hal-00390336v1
Indium Nitride Layer production Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. N° de brevet: EP1799886. 2007 Brevet hal-00390337v1
Réalisation d'une couche de nitrure d'indium Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. N° de brevet: FR2875333. 2006 Brevet hal-00390335v1
Method to manufacture Indium Nitride quantum dots Olivier Briot,Bernard Gil,Sandra Ruffenach Patent n° : EP1658394. 2006 Brevet hal-00390332v1
Indium Nitride Layer production Bernard Gil,Olivier Briot,Sandra Ruffenach,B. Maleyre,Thierry Cloitreet al. N° de brevet: WO2006032756. 2006 Brevet hal-00390339v1
Method to manufacture Indium Nitride quantum dots Olivier Briot,Bernard Gil,Sandra Ruffenach Patent n° : US2005028726. 2005 Brevet hal-00390331v1
Method to manufacture Indium Nitride quantum dots Olivier Briot,Bernard Gil,Sandra Ruffenach Patent n° : AU2003274409. 2005 Brevet hal-00390333v1
Method to manufacture Indium Nitride quantum dots Olivier Briot,Bernard Gil,Sandra Ruffenach Patent n° : WO2005014897. 2005 Brevet hal-00390329v1

Autre publication scientifique (1)

Response to &quot;Comment on 'Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition'&quot; Appl. Phys. Lett. 87, 176101 (2005) R. Intartaglia,B. Maleyre,Sandra Ruffenach,Olivier Briot,T. Taliercioet al. 2005, pp.87, 176102. ⟨10.1063/1.2117613⟩ Autre publication scientifique hal-00540414v1

Pré-publication, Document de travail (4)

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Nonlinear Terahertz electroluminescence from Dirac-Landau polaritons B. Benhamou-Bui,C. Consejo,S. Krishtopenko,S. Ruffenach,C. Brayet al. 2025 Pré-publication, Document de travail hal-05408435v1
Unveiling Long-Range Forces in Light Harvesting Proteins: Pivotal Roles of Temperature and Light Elsa Perez-Martin,Tristan Beranger,Laurent Bonnet,Frederic Teppe,Alvydas Lisauskaset al. 2024 Pré-publication, Document de travail hal-04828945v1