Sandrine Juillaguet

Identifiants chercheurs

IdHAL :

sandrine-juillaguet

ORCID :

0000-0002-5382-1967

Publications

Article dans une revue (48)

Structural and Optical Analysis of Chemically Deposited ZnS Thin Films for Optoelectronic Devices Applications A. Arifa Hassan,Aboubacar Almoustapha,Halidou Ibrahim,Olivier Briot,Sandrine Juillaguetet al. Asian Journal of Physical and Chemical Sciences, 2025, 13 (2), pp.56-64. ⟨10.9734/ajopacs/2025/v13i2247⟩ Article dans une revue hal-05055579v1
Effect of the growth temperature on the crystal quality and optical properties in ZnS Hassan Amadou Arifa,Olivier Briot,Sandrine Juillaguet,Herve Peyre,Bernard Fraisseet al. Journal of Applied Physics, 2025, 138 (11), ⟨10.1063/5.0271678⟩ Article dans une revue hal-05295706v1
Self-limited monolayer graphene growth on SiC with propane-hydrogen CVD Chiara Mastropasqua,Ahmed El Alouani,Matthieu Paillet,Marc Portail,Mathieu Koudiaet al. npj 2D Materials and Applications, 2025, 9 (1), pp.32. ⟨10.1038/s41699-025-00554-4⟩ Article dans une revue hal-05201892v1
Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2 Vincent Astié,Felipe Wasem Klein,Houssin Makhlouf,Matthieu Paillet,Jean-Roch Huntzingeret al. Physical Chemistry Chemical Physics, 2024, 26 (40), pp.25772-25779. ⟨10.1039/D4CP00603H⟩ Article dans une revue hal-04734922v1
Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility Julien Bassaler,Jash Mehta,Idriss Abid,Leszek Konczewicz,Sandrine Juillaguetet al. Advanced Electronic Materials, 2024, 11 (1), pp.2400069. ⟨10.1002/aelm.202400069⟩ Article dans une revue hal-04665123v1
Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size Felipe Wasem Klein,Jean-Roch Huntzinger,Vincent Astié,Damien Voiry,Romain Parretet al. Beilstein Journal of Nanotechnology, 2024, 15, pp.279-296. ⟨10.3762/bjnano.15.26⟩ Article dans une revue hal-04747945v1
Synthesis and characterization of aluminum doped zinc oxide nanoparticles via a novel and low cost aqueous chemical process Abdoul-Razak Moussa Tankari,K. Medjnoun,M. Nouiri,Olivier Briot,S. Juillaguetet al. Materials Letters, 2023, 353, pp.135230. ⟨10.1016/j.matlet.2023.135230⟩ Article dans une revue hal-04313143v1
Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process Leszek Konczewicz,Sandrine Juillaguet,Marcin Zajac,Elzbieta Litwin-Staszewska,Mohamed Al Khalfiouiet al. Physica Status Solidi A (applications and materials science), 2023, Nitride Semiconductors, 220 (16), pp.2200769. ⟨10.1002/pssa.202200769⟩ Article dans une revue hal-04248758v1
Electrical Transport Properties of Highly Doped N-Type GaN Materials L Konczewicz,E Litwin-Staszewska,M Zajac,H Turski,M Bockowskiet al. Semiconductor Science and Technology, 2022, 37 (5), pp.055012. ⟨10.1088/1361-6641/ac5e01⟩ Article dans une revue hal-03845953v1
Negative Magnetoresistivity in Highly Doped n-Type GaN Leszek Konczewicz,Malgorzata Iwinska,Elzbieta Litwin-Staszewska,Marcin Zajac,Henryk Turskiet al. Materials, 2022, 15 (20), pp.7069. ⟨10.3390/ma15207069⟩ Article dans une revue hal-03864839v1
Large inverted band gap in strained three-layer InAs/GaInSb quantum wells Colin Avogadri,Sébastian Gebert,Sergey Krishtopenko,Ivanovitch Castillo Arvelo,Christophe Consejoet al. Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩ Article dans une revue hal-03939599v2
p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method Maciej Zajac,Leszek Konczewicz,Elzbieta Litwin-Staszewska,M. Iwinska,R. Kucharskiet al. Journal of Applied Physics, 2021, 129 (13), pp.135702. ⟨10.1063/5.0038524⟩ Article dans une revue hal-03416929v1
High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials L. Konczewicz,S. Juillaguet,E. Litwin-Staszewska,R. Piotrzkowski,H. Peyreet al. Journal of Applied Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩ Article dans une revue hal-02931592v1
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition T. Sledziewski,M. Vivona,K. Alassaad,Pawel Kwasnicki,R. Arvinteet al. Journal of Applied Physics, 2016, 120 (20), pp.205701. ⟨10.1063/1.4967301⟩ Article dans une revue hal-01440539v1
Influence of AlN thickness on AlGaN epilayer grown by MOCVD M. Jayasakthi,Sandrine Juillaguet,Herve Peyre,Leszek Konczewicz,K. Baskaret al. Superlattices and Microstructures, 2016, 98, pp.515-521. ⟨10.1016/j.spmi.2016.08.053⟩ Article dans une revue hal-01407865v1
Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1) C. Bouhafs,V. Darakchieva,I. L. Persson,Antoine Tiberj,P. O. A. Perssonet al. Journal of Applied Physics, 2015, 117 (8), pp.085701. ⟨10.1063/1.4908216⟩ Article dans une revue hal-01200762v1
Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Alassaad,Véronique Soulière,François Cauwet,Hervé Peyre,Davy Caroleet al. Acta Materialia, 2014, 75, pp.219-226. ⟨10.1016/j.actamat.2014.04.057⟩ Article dans une revue hal-01023271v1
Stacking faults in intrinsic and N-doped 4HSiC: true influence of the N-doping on their multiplicity Gabrielle Regula,Maryse Lancin,Bernard Pichaud,Thomas Neisius,Rachid Dainecheet al. Philosophical Magazine, 2013, 93 (10-12), pp.1317-1325. ⟨10.1080/14786435.2012.745018⟩ Article dans une revue hal-01936279v1
Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC Jianwu Sun,V. Khranovskyy,M. Mexis,M. Eriksson,M. Syvajarviet al. Journal of Luminescence, 2012, 132, pp.122-127. ⟨10.1016/j.jlumin.2011.08.015⟩ Article dans une revue istex hal-00655907v1
Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC Jianwu Sun,Ivan Gueorguiev Ivanov,Sandrine Juillaguet,Jean Camassel Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.195201. ⟨10.1103/PhysRevB.83.195201⟩ Article dans une revue hal-00653305v1
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers Teddy Robert,Maya Marinova,Sandrine Juillaguet,Anne Henry,Efstathios K. Polychroniadiset al. Materials Science Forum, 2011, Materials Science Forum, 679-680, pp.314-317. ⟨10.4028/www.scientific.net/MSF.679-680.314⟩ Article dans une revue hal-02507811v1
Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers Maya Marinova,Ariadne Andreadou,Jian Wu Sun,Jean Lorenzzi,Alkyoni Mantzariet al. Materials Science Forum, 2011, Materials Science Forum, 679-680, pp.241-244. ⟨10.4028/www.scientific.net/MSF.679-680.241⟩ Article dans une revue hal-02511264v1
Effect of initial substrate conditions on growth of cubic silicon carbide R. Vasiliauskas,M. Marinova,M. Syvajarvi,R. Liljedahl,Georgios Zouliset al. Journal of Crystal Growth, 2011, 324, pp.7-14. ⟨10.1016/j.jcrysgro.2011.03.024⟩ Article dans une revue hal-00653277v1
Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC J. W. Sun,G. Zoulis,J. C. Lorenzzi,N. Jegenyes,Herve Peyreet al. Journal of Applied Physics, 2010, 108, pp.013503. ⟨10.1063/1.3455999⟩ Article dans une revue hal-00536664v1
Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor M. Zielinski,M. Portail,T. Chassagne,S. Juillaguet,H. Peyre Journal of Crystal Growth, 2008, 310 (13), pp.3174-3182. ⟨10.1016/j.jcrysgro.2008.03.022⟩ Article dans une revue istex hal-00389307v1
Optical properties of as-grown and process-induced stacking faults in 4H-SiC Jean Camassel,Sandrine Juillaguet physica status solidi (b), 2008, 245, pp.1337-1355. ⟨10.1002/pssb.200844055⟩ Article dans une revue hal-00539644v1
Quantum confinement effect of ZnO nanocrystallites embedded in In2O3 films M. Stoehr,Sandrine Juillaguet,M. Marshall,J. G. Wen Journal of Applied Physics, 2008, 104, pp.084906. ⟨10.1063/1.3000463⟩ Article dans une revue hal-00539808v1
Prospects for 3C-SiC bulk crystal growth Didier Chaussende,Frédéric J. Mercier,Alexandre Boulle,Florine Conchon,Maher Soueidanet al. Journal of Crystal Growth, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩ Article dans une revue hal-00174181v1
Nonlinear dependence of the magnetophotoluminescence energies of asymmetric GaAs/Ga0.67Al0.33As quantum wells on an external magnetic field W. Zawadzki,S. Bonifacie,Sandrine Juillaguet,Christophe Chaubet,Andre Raymondet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.245319. ⟨10.1103/PhysRevB.75.245319⟩ Article dans une revue hal-00539643v1
Screening the built-in electric field in 4H silicon carbide stacking faults Sandrine Juillaguet,Jean Camassel,M. Albrecht,T. Chassagne Applied Physics Letters, 2007, 90, pp.111902. ⟨10.1063/1.2713169⟩ Article dans une revue hal-00541628v1
Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers Jean Camassel,Sandrine Juillaguet Journal of Physics D: Applied Physics, 2007, 40 (20), pp.6264-6277. ⟨10.1088/0022-3727/40/20/S11⟩ Article dans une revue istex hal-00389851v1
Cathodoluminescence investigation of stacking faults extension in 4H-SiC Sandrine Juillaguet,M. Albrecht,Jean Camassel,T. Chassagne Physica Status Solidi A (applications and materials science), 2007, 204, pp.2222-2228. ⟨10.1002/pssa.200675469⟩ Article dans une revue istex hal-00539641v1
Application of LTPL investigation methods to CVD-grown SiC Jean Camassel,Sandrine Juillaguet,Marcin Zielinski,Carole Balloud Chemical Vapor Deposition, 2006, 12 (8-9), pp.549-556. ⟨10.1002/cvde.200606472⟩ Article dans une revue istex hal-00389876v1
Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism Maher Soueidan,Gabriel Ferro,B. Nsouli,Mohamad Roumie,Efsthatios Polychroniadiset al. Crystal Growth & Design, 2006, 6 (11), pp.2598-2602. ⟨10.1021/cg0603523⟩ Article dans une revue hal-00389882v1
Characterization of bulk &lt;111&gt; 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method L. Latu-Romain,D. Chaussende,C. Balloud,S. Juillaguet,L. Rapenneet al. Silicon carbide and related materials, 2006, pp.527-529 / 99-102 Article dans une revue hal-00394389v1
Control of epitaxial layers grown on 4H-SiC: from 3C microcrystalline inclusions to type II quantum well structures Sandrine Juillaguet,C. Balloud,V. Souliere,C. Sartel,Jean Camasselet al. Physica Status Solidi A (applications and materials science), 2005, 202, pp.593-597. ⟨10.1002/pssa.200460435⟩ Article dans une revue istex hal-00541643v1
Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique R. Al Asmar,J.-P. Atanas,M. Ajataka,Y. Zaatar,G. Ferblantieret al. Journal of Crystal Growth, 2005, 279 (3-4), pp.394-402. ⟨10.1016/j.jcrysgro.2005.02.035⟩ Article dans une revue istex hal-00329299v1
Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique R. Al Asmar,Sandrine Juillaguet,M. Ramonda,Alain Giani,P. Combetteet al. Journal of Crystal Growth, 2005, 275 (3-4), pp.512-520. ⟨10.1016/j.jcrysgro.2004.12.034⟩ Article dans une revue istex hal-00541634v1
Technical aspects of &lt; 1120 &gt; 4H-SiC MOSFET processing Caroline Blanc,D. Tournier,V. Souliere,Sandrine Juillaguet,Sylvie Contreraset al. Physica Status Solidi A (applications and materials science), 2005, 202, pp.680-685. ⟨10.1002/pssa.200460473⟩ Article dans une revue istex hal-00541644v1
Optical properties of GaN grown on porous silicon substrate T. Boufaden,A. Matoussi,S. Guermazi,S. Juillaguet,A. Toureilleet al. Physica Status Solidi A (applications and materials science), 2004, 201 (3), pp.582-587. ⟨10.1002/pssa.200306740⟩ Article dans une revue hal-00330454v1
Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment I. Halidou,Z. Benzarti,T. Boufaden,B. El Jani,Sandrine Juillaguetet al. Materials Science and Engineering: B, 2004, 110, pp.251-255. ⟨10.1016/j.mseb.2004.02.002⟩ Article dans une revue istex hal-00543759v1
Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method Didier Chaussende,Carole Balloud,Laurent Auvray,Francis Baillet,Marcin Zielinskiet al. Materials Science Forum, 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩ Article dans une revue hal-00417942v1
Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C-SiC on Si G. Ferro,Jean Camassel,Sandrine Juillaguet,C. Balloud,Ek Polychroniadiset al. Semiconductor Science & Technology, 2003, 18, pp.1015-1023 Article dans une revue hal-00543763v1
Discrete states of conduction electrons bound to magnetoacceptors in quantum wells S. Bonifacie,Ym Meziani,Sandrine Juillaguet,Christophe Chaubet,Andre Raymondet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.165330. ⟨10.1103/PhysRevB.68.165330⟩ Article dans une revue hal-00543765v1
Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime Andre Raymond,Sandrine Juillaguet,I. Elmezouar,W. Zawadzki,Ml Sadowskiet al. Semiconductor Science & Technology, 1999, 14, pp.915-920 Article dans une revue hal-00543773v1
Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures H. Peyre,F. Alsina,S. Juillaguet,E. Massone,J. Camasselet al. Applied Surface Science, 1993, 63 (1-4), pp.177-181. ⟨10.1016/0169-4332(93)90085-P⟩ Article dans une revue istex hal-02042715v1
Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses J. Camassel,S. Juillaguet,R. Schwedler,K. Wolter,F. Baumannet al. Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-99-C5-106. ⟨10.1051/jp4:1993518⟩ Article dans une revue istex jpa-00251604v1
Growth and characterization of In0.53Ga0.47As/InxGa1−xAs strained-layer superlattices A. Kohl,S. Juillaguet,B. Fraisse,R. Schwedler,F. Royoet al. Materials Science and Engineering: B, 1993, 21 (2-3), pp.244-248 Article dans une revue hal-02042603v1

Communication dans un congrès (82)

AlGaN channel high electron mobility transistors on Si for power electronics Julien Bassaler,Jash Mehta,Idriss Abid,Leszek Konczewicz,Sandrine Juillaguetet al. Symposium de Génie Électrique SGE 2025, CNRS, Jul 2025, Toulouse, France Communication dans un congrès hal-05398228v1
Exploring Gallium Nitride Bulk Crystal Growth Tomasz Sochacki,M.A. Zajac,Matthieu Paillet,Sandrine Juillaguet,R. Kucharskiet al. E-MRS 2024 Fall Meeting, Symposium I-13 Bulk Nitrides, E-MRS 2024 Fall Meeting, 16-19 September 2024,, Sep 2024, Warsaw (POLAND), Poland Communication dans un congrès hal-04829298v1
Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximité V. Astié,Nicolas Brun,Christophe Coillot,Sylvie Contreras,J.M. Decamset al. ID en action !, Mission pour les initiatives transverses et interdisciplinaires du CNRS (MITI), Nov 2022, Paris, France Communication dans un congrès hal-04209570v1
Module Éducation à la Transition Écologique (ETE) à l'université de Montpellier : retour d'expérience Jean-Louis Bantignies,Sandrine Bardet,Adeline Barnaud,Patrick Cañadas,Boris Chenaudet al. 10. Journées Scientifiques NUMEV, Nov 2021, Montpellier, France Communication dans un congrès hal-03428625v1
Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates Sylvie Contreras,Leszek Konczewicz,Roxana Arvinte,Herve Peyre,Thierry Chassagneet al. 11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275 Communication dans un congrès hal-01935564v1
Electrical transport properties of p-type 4H-SiC Sylvie Contreras,Leszek Konczewicz,Roxana Arvinte,Herve Peyre,Thierry Chassagneet al. E-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩ Communication dans un congrès hal-01540938v1
Optical investigations and strain effect in AlGaN/GaN epitaxial layers M. Jayasakthi,Sandrine Juillaguet,Herve Peyre,Leszek Konczewicz,Matthieu Moretet al. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩ Communication dans un congrès hal-01935164v1
Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers Marcin Zielinski,Thierry Chassagne,Roxana Arvinte,Adrien Michon,Marc Portailet al. 11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79 Communication dans un congrès hal-01935556v1
High Temperature Annealing of MBE-grown Mg-doped GaN Sylvie Contreras,Leszek Konczewicz,Herve Peyre,Sandrine Juillaguet,M. Al Khalfiouiet al. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩ Communication dans un congrès hal-01935176v1
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC Sylvie Contreras,Leszek Konczewicz,Pawel Kwasnicki,Roxana Arvinte,Herve Peyreet al. 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩ Communication dans un congrès hal-01936580v1
p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum Marc Zielinski,Roxana Arvinte,Thierry Chassagne,Adrien Michon,Marc Portailet al. ICSCRM, Oct 2015, Giardini Naxos, France. pp.137 - 142, ⟨10.4028/www.scientific.net/MSF.858.137⟩ Communication dans un congrès hal-01936467v1
Optical characterization of p-type 4H-SiC epilayers Gediminas Liaugaudas,Donatas Dargis,Pawel Kwasnicki,Herve Peyre,Roxana Arvinteet al. ECSCRM, Oct 2014, Miyasaki, Japan. pp.249-252 Communication dans un congrès hal-01935527v1
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC Nikolaos Tsavdaris,Pawel Kwasnicki,Kanaparin Ariyawong,Nathalie Valle,Herve Peyreet al. ECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩ Communication dans un congrès hal-01936649v1
Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy Pawel Kwasnicki,Roxana Arvinte,Herve Peyre,Marcin Zielinski,Sandrine Juillaguet 10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.237 - 240, ⟨10.4028/www.scientific.net/MSF.821-823.237⟩ Communication dans un congrès hal-01936601v1
Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers Roxana Arvinte,Marcin Zielinski,Thierry Chassagne,Marc Portail,Adrien Michonet al. 10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.149-152 Communication dans un congrès hal-02025329v1
Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization Matthieu Florentin,Joan Marc Rafi,Florian Chevalier,Victor Soler,Leszek Konczewiczet al. 10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.717 - 720, ⟨10.4028/www.scientific.net/MSF.821-823.717⟩ Communication dans un congrès hal-01936637v1
Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD Pawel Kwasnicki,Roxana Arvinte,Herve Peyre,Marcin Zielinski,Leszek Konczewiczet al. HETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩ Communication dans un congrès hal-01936666v1
Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition T. Sledziewski,S. Beljakowa,K. Alassaad,Pawel Kwasnicki,R. Arvinteet al. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.261-+, ⟨10.4028/www.scientific.net/MSF.778-780.261⟩ Communication dans un congrès hal-01936293v1
Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere Pawel Kwasnicki,Valdas Jokubavicius,Jianwu Sun,Hervé Peyre,Rositsa Yakimovaet al. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.243-+, ⟨10.4028/www.scientific.net/MSF.778-780.243⟩ Communication dans un congrès hal-01936275v1
Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers Roxana Arvinte,Marc Zielinski,Thierry Chassagne,Marc Portail,Adrien Michonet al. HETEROSIC 2013, Jun 2013, Nice, France. pp.45 - 50, ⟨10.4028/www.scientific.net/MSF.806.45⟩ Communication dans un congrès hal-01936612v1
Raman investigation of aluminum-doped 4H-SiC Sandrine Juillaguet,Pawel Kwasnicki,Herve Peyre,Leszek Konczewicz,Sylvie Contreraset al. ECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩ Communication dans un congrès hal-00803766v1
Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy Georgios Zoulis,J. Sun,R. Vasiliauskas,J. Lorenzzi,Hervé Peyreet al. HETEROSIC & WASMPE 2011, Jun 2011, TOURS, France. pp.149-153, ⟨10.4028/www.scientific.net/MSF.711.149⟩ Communication dans un congrès hal-00655917v1
Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications Hervé Peyre,Jianwu Sun,Jude Guelfucci,Sandrine Juillaguet,J. Hassanet al. HeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩ Communication dans un congrès hal-00655897v1
Influence of the C∕Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C-SiC Homoepitaxial Layers N. Jegenyes,M. Marinova,G. Zoulis,J. Lorenzzi,A. Andreadouet al. E-MRS Symposium, European Materials Research Society, Oct 2010, Strasbourg, France. pp.31-34, ⟨10.1063/1.3518304⟩ Communication dans un congrès hal-02875519v1
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates Jean Lorenzzi,Georgios Zoulis,Olivier Kim-Hak,Nikoletta Jegenyes,Davy Caroleet al. 13th International Conference on Silicon Carbide and Related Materials 2009, Oct 2009, Nürnberg, Germany. pp.171-174, ⟨10.4028/www.scientific.net/MSF.645-648.171⟩ Communication dans un congrès hal-02864825v1
Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid Technique Georgios Zoulis,Jianwu Sun,Nikoletta Jegenyes,Jean Lorenzzi,Sandrine Juillaguetet al. Conference of the E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.119-122 Communication dans un congrès hal-00653311v1
LTPL investigation of N-Ga and N-Al donor-acceptor pair spectra in 3C-SiC layers grown by VLS on 6H-SiC substrates J. W. Sun,G. Zoulis,J. Lorenzzi,N. Jegenyes,Sandrine Juillaguetet al. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.415-418 Communication dans un congrès hal-00543685v1
Splitting of close N-Al donor-acceptor-pair spectra in 3C-SiC Jianwu Sun,Georgios Zoulis,Jean Lorenzzi,Nikoletta Jegenyes,Sandrine Juillaguetet al. Conference of the E-MRS Symposium F, Oct 2010, Strasbourg, France. pp.111-114, ⟨10.1063/1.3518273⟩ Communication dans un congrès hal-00653310v1
6H-type zigzag faults in low-doped 4H-SiC expitaxial layers Teddy Robert,M. Marinova,Sandrine Juillaguet,A. Henry,E. K. Polychroniadiset al. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.347-350 Communication dans un congrès hal-00543650v1
Investigation of low doped n-type and p-type 3C-SiC layers grown on 6H-SiC substrates by sublimation epitaxy G. Zoulis,J. Sun,M. Beshkova,R. Vasiliauskas,Sandrine Juillaguetet al. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.179-182 Communication dans un congrès hal-00543642v1
Observation of 3C zigzag faults in low-doped 4H-SiC epitaxial layers Teddy Robert,Maya Marinova,Sandrine Juillaguet,Anne Henry,Efsthatios Polychroniadiset al. International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, France Communication dans un congrès hal-00390779v1
Optical investigations of stacking faults in silicon carbide Sandrine Juillaguet,Teddy Robert,Jean Camassel 9th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies 2008, Jun 2008, lodz, Poland. pp.5 Communication dans un congrès hal-00814002v1
O19. Optical investigations techniques used for stacking faults characterization in SiC Sandrine Juillaguet,Jean Camassel,Teddy Robert International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09) Catania (Italy), May 6th-7th, 2009, May 2009, catane, Italy Communication dans un congrès hal-00814450v1
Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes Sandrine Juillaguet,Teddy Robert,Jean Camassel 9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.5-8 Communication dans un congrès hal-00543702v1
Effect of growth parameters on the surface morphology of 3C-SiC homoepitaxial layers grown by chemical vapor deposition N. Jegenyes,Jean Lorenzi,Georgios Zoulis,Véronique Soulière,Jacques Dazordet al. International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy Communication dans un congrès hal-00390782v1
Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity Felix Oehlschlaeger,Sandrine Juillaguet,Herve Peyre,Jean Calmassel,Peter J. Wellmann 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.259-262 Communication dans un congrès hal-00389394v1
Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT J. Eid,I.-G. Galben,G. Zoulis,Teddy Robert,D. Chaussendeet al. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48 Communication dans un congrès hal-00390466v1
Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC Maya Marinova,Georgios Zoulis,Teddy Robert,Frederic Mercier,Alkioni Mantzariet al. 25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730 Communication dans un congrès hal-00543681v1
Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition Maya Marinova,Teddy Robert,Sandrine Juillaguet,Ioannis Tsiaoussis,Nikolaos Frangiset al. 9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Sep 2008, Linz (AUSTRIA), France. pp.1924-1930 Communication dans un congrès hal-00543707v1
8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well? Teddy Robert,Sandrine Juillaguet,M. Marinova,T. Chassagne,I. Tsiaoussiset al. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.339-342 Communication dans un congrès hal-00390453v1
Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seeds Georgios Zoulis,Jean Lorenzi,R. Vasiliauskas,N. Jegenyes,M. Beshkovaet al. International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy Communication dans un congrès hal-00390772v1
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC M. Zielinski,M. Portail,T. Chassagne,Sandrine Juillaguet,Herve Peyreet al. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.49-52 Communication dans un congrès hal-00389376v1
Growth and characterization of low doped 3C-SiC layers deposited by the VLS technique Jean Lorenzi,Georgios Zoulis,O. Kim-Hak,Sandrine Juillaguet,Gabriel Ferroet al. International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy Communication dans un congrès hal-00390727v1
Recent aspects of in-grown stacking faults in 4H-SiC Jean Camassel,Sandrine Juillaguet,Teddy Robert 17th European Heterostructure Technology Workshop, HETECH 2008, in Venice, Italy, Nov 2008, Venice, Italy Communication dans un congrès hal-00390823v1
Strain and wafer curvature of 3C-SiC films on silicon : influence of the growth conditions Marcin Zielinski,S. Ndiaye,Thierry Chassagne,Sandrine Juillaguet,Renata Lewandowskaet al. International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06) No8, May 2006, Cádiz, Spain. pp.981-986 Communication dans un congrès hal-00389884v1
Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC Sandrine Juillaguet,M. Albrecht,Renata Lewandowska,Jean Camassel,T. Chassagne 8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2006, Cadiz (SPAIN), Spain. pp.1513-1516, ⟨10.1002/pssc.200674133⟩ Communication dans un congrès istex hal-00389886v1
Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies Yeon-Suk Jang,Sakwe A. Sakwe,Peter J. Wellmann,Sandrine Juillaguet,Herve Peyreet al. 6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.13-16 Communication dans un congrès hal-00541647v1
Dopant effect of the optical properties of ZnO nanostructures M. Stoehr,Sandrine Juillaguet,T.M. Kyaw,J.G. Wen 8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC2006), 2006, Cadiz, Spain. pp.1432 Communication dans un congrès hal-00390472v1
Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC Sandrine Juillaguet,Thierry Guillet,Richard Bardoux,Jean Camassel,T. Chassagne 6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.351-354 Communication dans un congrès hal-00541635v1
Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions M. Zielinski,S. Ndiaye,T. Chassagne,Sandrine Juillaguet,Renata Lewandowskaet al. 5th Brazo;oam/German Workshop on Applied Surface Science, Apr 2006, Mangaratiba (BRAZIL), France. pp.981-986 Communication dans un congrès hal-00543731v1
Prospects for 3C-SiC bulk crystal growth D. Chaussende,Florian Mercier,Alexandre Boulle,Florine Conchon,M. Soueidanet al. E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France Communication dans un congrès hal-00285924v1
Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method Sylvie Contreras,M. Zielinski,Leszek Konczewicz,Caroline Blanc,Sandrine Juillaguetet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636 Communication dans un congrès hal-00536296v1
Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism M. Soueidan,G. Ferro,J. Stoemenos,E. K. Polychroniadis,D. Chaussendeet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290 Communication dans un congrès hal-00140124v1
Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method L. Latu-Romain,D. Chaussende,Carole Balloud,Sandrine Juillaguet,L. Rapenneet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩ Communication dans un congrès hal-00541637v1
Control of 3C-SiC/Si wafer bending by the &quot;checker-board&quot; carbonization method Thierry Chassagne,Gabriel Ferro,H. Haas,H. Mank,André Leycuraset al. International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004), Jun 2004, MONTPELLIER, France. pp.524-530, ⟨10.1002/pssa.200460415⟩ Communication dans un congrès istex hal-00389901v1
Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC M. Zielinski,C. Balloud,Sandrine Juillaguet,B. Boyer,V. Souliereet al. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.449-452 Communication dans un congrès hal-00541649v1
Comparative evaluation of free-standing 3C-SiC crystals E. Polychroniadis,C. Balloud,Sandrine Juillaguet,G. Ferro,Y. Monteilet al. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.229-232 Communication dans un congrès hal-00541639v1
Specific aspects of type II heteropolytype stacking faults in SiC Sandrine Juillaguet,Jean Camassel 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.335-340 Communication dans un congrès hal-00541645v1
Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates Caroline Blanc,M. Zielinski,V. Souliere,C. Sartel,Sandrine Juillaguetet al. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120 Communication dans un congrès hal-00541640v1
Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix Jean Camassel,Sandrine Juillaguet 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.331-334 Communication dans un congrès hal-00541642v1
Optical and structural characterization of electron beam ZnO thin films evaporated for sensors applications Roy Al Asmar,Jean-Louis Sauvajol,Frédérique Pascal-Delannoy,Sandrine Juillaguet,Philippe Combetteet al. EUSPEN, 5th international conference, May 2005, Montpellier, France Communication dans un congrès hal-01796894v1
Effect of SiN treatment on GaN epilayer quality Z. Benzarti,I. Halidou,T. Boufaden,B. El Jani,Sandrine Juillaguetet al. 8th International Conference on Optics of Excitons in Confined Systems, Sep 2003, Lecce (ITALY), France. pp.502-508 Communication dans un congrès hal-00543761v1
Comparative studies of (0001) 4H-SiC layers grown with either Silane or HexaMethylDiSilane Propane precursor systems. C. Sartel,C. Balloud,V. Souliere,Sandrine Juillaguet,J. Dazordet al. 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.217-220 Communication dans un congrès hal-00543747v1
Potential of HMDS/C3H8 precursor system for the growth of state of the art heteroepitaxial 3C-SiC layers on Si(100) G. Ferro,Jean Camassel,Sandrine Juillaguet,C. Balloud,Ek Polychroniadiset al. 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.281-284 Communication dans un congrès hal-00543751v1
Dilute aluminum concentration in 4H-SiC : from SIMS to LTPL measurements Sandrine Juillaguet,M. Zielinski,C. Balloud,C. Sartel,Christophe Consejoet al. 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.775-778 Communication dans un congrès hal-00543756v1
Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers Sandrine Juillaguet,C. Balloud,J. Pernot,C. Sartel,V. Souliereet al. 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.577-580 Communication dans un congrès hal-00543755v1
Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots S. Kalliakos,Thierry Bretagnon,Pierre Lefebvre,Sandrine Juillaguet,T. Taliercioet al. 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩ Communication dans un congrès hal-00543738v1
Investigation of &lt; 1,1,-2,0 &gt; epitaxial layers grown on a-cut 4H-SiC substrates. Caroline Blanc,C. Sartel,V. Souliere,Sandrine Juillaguet,Y. Monteilet al. 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.237-240 Communication dans un congrès hal-00543749v1
Optical properties of GaN grown on porous silicon substrate T. Boufaden,A. Matoussi,S. Guermazi,Sandrine Juillaguet,A. Toureilleet al. 8th International Conference on Optics of Excitons in Confined Systems, Sep 2003, Lecce (ITALY), France. pp.582-587 Communication dans un congrès hal-00543762v1
Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls” Thierry Chassagne,André Leycuras,Carole Balloud,Philippe Arcade,Hervé Peyreet al. 10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003), Oct 2003, Lyon, France. pp.273-276 Communication dans un congrès hal-00389899v1
Optical properties of GaN/AlN quantum boxes under high photo-excitation S. Kalliakos,Thierry Bretagnon,Pierre Lefebvre,Sandrine Juillaguet,T. Taliercioet al. 5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩ Communication dans un congrès hal-00543736v1
Growth at high rates and characterization of bulk 3C-SiC material G. Ferro,C. Balloud,Sandrine Juillaguet,P. Vicente,Jean Camasselet al. 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, LINKOPING (SWEDEN), France. pp.115-118 Communication dans un congrès hal-00543767v1
4H-SiC material for Hall effect and high-temperature sensors working in harsh environments Jean-Louis Robert,Sylvie Contreras,Jean Camassel,J. Pernot,Sandrine Juillaguetet al. International Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438 Communication dans un congrès hal-00543769v1
Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport Jean Camassel,Sandrine Juillaguet,N. Planes,Andre Raymond,P. Grosseet al. 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.258-264 Communication dans un congrès hal-00543777v1
Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN Hw Kunert,Sandrine Juillaguet,Jean Camassel,Jb Malherbe,Rq Odendaalet al. 3rd International Conference on Nitride Semiconductors (ICNS 99), Jul 1999, MONTPELLIER (FRANCE), France. pp.619-623 Communication dans un congrès hal-00543770v1
Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition E. Neyret,G. Ferro,Sandrine Juillaguet,Jm Bluet,C. Jaussaudet al. 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.253-257 Communication dans un congrès hal-00543776v1
Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition F. Namavar,Pc Colter,N. Planes,B. Fraisse,J. Pernotet al. 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.571-575 Communication dans un congrès hal-00543778v1
Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC P. Thomas,Sylvie Contreras,Sandrine Juillaguet,Jean-Louis Robert,Jean Camasselet al. 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.725-728 Communication dans un congrès hal-00543782v1
Optical properties of InGaN/GaN multiple quantum wells J. Allegre,Pierre Lefebvre,Sandrine Juillaguet,Jean Camassel,Wojciech Knapet al. 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298 Communication dans un congrès hal-00543785v1
Experimental investigation of 4H-SiC bulk crystal growth K. Chourou,M. Anikin,Jm Bluet,V. Lauer,G. Guillotet al. 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, Stockholm, Sweden. pp.17-20, ⟨10.4028/www.scientific.net/MSF.264-268.17⟩ Communication dans un congrès hal-00543779v1
Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction Andre Raymond,Sandrine Juillaguet,B. Couzinet,Iel Mezouar,A. Kamalsaadiet al. European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.211-214 Communication dans un congrès hal-00543787v1
Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman H. Peyre,F. Alsina,S. Juillaguet,E. Massone,J. Camasselet al. EXMATEC'92, May 1993, Lyon, France. pp.73-76 Communication dans un congrès hal-02042639v1

Poster de conférence (5)

Towards an understanding of vanadium doping effects in 4H-SiC Harmke van Dijk,Matthieu Paillet,Océane Février,Sandrine Juillaguet,S. Contreraset al. Les Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France Poster de conférence hal-04829444v1
Genèse, contenu et perspectives d'un module expérimental d'éducation à la transition écologique à la Faculté des Sciences de l'université de Montpellier. Olivier Arnould,Sandrine Bardet,Jean-Louis Bantignies,Adeline Barnaud,Ilham Bentalebet al. Colloque ETES 2023 : Enseigner les transitions écologiques et sociales dans le supérieur, Jul 2023, Paris, France. 2023 Poster de conférence hal-04204671v1
Graphene: From Material to applications Périne Landois,Sébastien Nanot,Benoit Jouault,Dilek Cakiroglu,Sylvie Contreraset al. Graphene And Co Annual Meeting 2019, Oct 2019, Bad Herrenalb, Germany. Poster de conférence hal-03144975v1
Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN Sylvie Contreras,Leszek Konczewicz,Sandrine Juillaguet,Herve Peyre,Mohamed Al Khalfiouiet al. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan Poster de conférence hal-01937531v1
Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x&lt;0.4) grown by molecular epitaxy Julien Brault,Mathieu Leroux,Samuel Matta,Mohamed Al Khalfioui,Benjamin Damilanoet al. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan Poster de conférence hal-01937537v1