Sébastien Duguay

Publications

Article dans une revue (68)

Microstructural and emission properties induced by Na incorporation in pure sulphide CIGS absorber Richel Dongmo,Rémi Demoulin,Nicolas Barreau,Léo Choubrac,Fabien Pineauet al. Journal of Alloys and Compounds, In press, 1037, pp.182582. ⟨10.1016/j.jallcom.2025.182582⟩ Article dans une revue hal-05221794v1
Boron distribution in two-phase superconducting silicon-on-insulator by atom probe tomography P. Dumas,Sébastien Duguay,Didier Blavette,M. Opprecht,S. Kerdilèset al. Journal of Applied Physics, 2025, 138 (5), pp.053901. ⟨10.1063/5.0264354⟩ Article dans une revue hal-05201223v1
Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting Samba Ndiaye,Sébastien Duguay,François Vurpillot,Chiara Carraro,Gianluigi Maggioniet al. Materials Science in Semiconductor Processing, 2023, 164 (11), pp.107641. ⟨10.1016/j.mssp.2023.107641⟩ Article dans une revue hal-04125505v1
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting Enrico Di Russo,Francesco Sgarbossa,Pierpaolo Ranieri,Gianluigi Maggioni,Samba Ndiayeet al. Applied Surface Science, 2023, 612, pp.155817. ⟨10.1016/j.apsusc.2022.155817⟩ Article dans une revue hal-03885778v1
Ultrahigh Incorporation of Tin in SiSn Nanowires Grown via In-Plane Solid-Liquid-Solid Mechanism Edy Azrak,Zhaoguo Xue,Shuai Liu,Wanghua Chen,Celia Castroet al. Applied Surface Science, 2023, 618, pp.156637. ⟨10.1016/j.apsusc.2023.156637⟩ Article dans une revue hal-04310644v1
Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography Paul Dumas,Sébastien Duguay,Julien Borrel,Fanny Hilario,Didier Blavette Microscopy and Microanalysis, 2022, 28, pp.994-997. ⟨10.1017/S1431927621012800⟩ Article dans une revue hal-03468019v1
Investigation of Sn-containing precursors for in-plane GeSn nanowire growth Lulu Zheng,Edy Azrak,Ruiling Gong,Celia Castro,Sébastien Duguayet al. Journal of Alloys and Compounds, 2022, 899, pp.163273. ⟨10.1016/j.jallcom.2021.163273⟩ Article dans une revue hal-03595536v1
Uphill phosphorus diffusion in carbon co-implanted silicon P. Dumas,Sébastien Duguay,F. Hilario,A. Gauthier,Didier Blavette Journal of Applied Physics, 2022, 131 (11), pp.115102. ⟨10.1063/5.0074682⟩ Article dans une revue hal-03616394v1
Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating Niemat Moultif,Sébastien Duguay,O. Latry,M. Ndiaye,Eric Joubert Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩ Article dans une revue hal-03469148v1
Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling P. Dumas,P.-L. Julliard,J. Borrel,Sébastien Duguay,F. Hilarioet al. Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩ Article dans une revue hal-03249547v1
Atom probe tomography quantification of carbon in silicon P. Dumas,S. Duguay,J. Borrel,F. Hilario,D. Blavette Ultramicroscopy, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩ Article dans une revue hal-03468007v1
Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles Ruiling Gong,Edy Azrak,Celia Castro,Sébastien Duguay,Philippe Pareigeet al. Nanotechnology, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩ Article dans une revue hal-03249563v1
Atom probe tomography quantification of carbon in silicon P. Dumas,Sébastien Duguay,J. Borrel,F. Hilario,Didier Blavette Ultramicroscopy, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩ Article dans une revue hal-03249568v1
Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling P. Dumas,P.-L. Julliard,J. Borrel,S. Duguay,F. Hilarioet al. Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩ Article dans une revue hal-03468001v1
Low-Temperature Plasma-Assisted Growth of Core–Shell GeSn Nanowires with 30% Sn Edy Azrak,Wanghua Chen,Simona Moldovan,Sébastien Duguay,Philippe Pareigeet al. Journal of Physical Chemistry C, 2020, 124 (1), pp.1220-1226. ⟨10.1021/acs.jpcc.9b10444⟩ Article dans une revue hal-02433462v1
Hydrogen Plasma-Assisted Growth of Gold Nanowires Ruiling Gong,Zhen Zheng,Junyang An,Jean-Luc Maurice,Edy Azraket al. Crystal Growth & Design, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩ Article dans une revue hal-03030277v1
Heavy Alkali Treatment of Cu(In,Ga)Se 2 Solar Cells: Surface versus Bulk Effects Susanne Siebentritt,Enrico Avancini,Marcus Bär,Jakob Bombsch,Emilie Bourgeoiset al. Advanced Energy Materials, 2020, pp.1903752. ⟨10.1002/aenm.201903752⟩ Article dans une revue hal-02461969v1
Influence of RbF post deposition treatment on heterojunction and grain boundaries in high efficient (21.1%) Cu(In,Ga)Se2 solar cells Mohit Raghuwanshi,Arantxa Vilalta-Clemente,Celia Castro,Sébastien Duguay,Emmanuel Cadelet al. Nano Energy, 2019, 60, pp.103-110. ⟨10.1016/j.nanoen.2019.03.028⟩ Article dans une revue hal-02108142v1
Evidence of Mg segregation to threading dislocation in normally-off GaN-HEMT Sébastien Duguay,Andres Echeverri,Celia Castro,Olivier Latry IEEE Transactions on Nanotechnology, 2019, 18, pp.995-998. ⟨10.1109/TNANO.2019.2942400⟩ Article dans une revue hal-02299201v1
3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon P. Dumas,Sébastien Duguay,J. Borrel,A. Gauthier,E. Gheginet al. Applied Physics Letters, 2019, 115 (13), pp.132103. ⟨10.1063/1.5121629⟩ Article dans une revue hal-02298943v1
Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography Rémi Demoulin,Manuel Roussel,Sébastien Duguay,Dominique Muller,Daniel Mathiotet al. Journal of Physical Chemistry C, 2019, 123 (12), pp.7381-7389. ⟨10.1021/acs.jpcc.8b08620⟩ Article dans une revue hal-02082140v1
Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells J. Hernández-Saz,M. Herrera,J. Pizarro,M. Gonzalez,J. Abellet al. Journal of Alloys and Compounds, 2019, 792, pp.1021-1027. ⟨10.1016/j.jallcom.2019.04.119⟩ Article dans une revue hal-02108138v1
Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2thin-film solar cells Arantxa Vilalta-Clemente,Mohit Raghuwanshi,Sébastien Duguay,Celia Castro,Emmanuel Cadelet al. Applied Physics Letters, 2018, 112 (10), pp.103105. ⟨10.1063/1.5020805⟩ Article dans une revue hal-01929133v1
Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells J. Hernández-Saz,M. Herrera,J. Pizarro,P.L. Galindo,M. Gonzalezet al. Journal of Alloys and Compounds, 2018, 763, pp.1005-1011. ⟨10.1016/j.jallcom.2018.05.333⟩ Article dans une revue hal-02108144v1
Growth of In-Plane Ge 1– x Sn x Nanowires with 22 at. % Sn Using a Solid–Liquid–Solid Mechanism Edy Azrak,Wanghua Chen,Simona Moldovan,Shiwen Gao,Sébastien Duguayet al. Journal of Physical Chemistry C, 2018, 122 (45), pp.26236-26242. ⟨10.1021/acs.jpcc.8b07142⟩ Article dans une revue hal-02108143v1
Assessment of High Sn Incorporation in Ge NanoWires Synthesized via In Plane Solid-Liquid-Solid Mechanism by In-Situ TEM Simona Moldovan,Edy Azrak,Wanghua Chen,Shiwen Gao,Sébastien Duguayet al. Microscopy and Microanalysis, 2018, 24 (S1), pp.306-307. ⟨10.1017/S1431927618002027⟩ Article dans une revue hal-02183481v1
Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives J. Barnes,A. Grenier,I. Mouton,S. Barraud,G. Audoitet al. Scripta Materialia, 2018, 148, pp.91 - 97. ⟨10.1016/j.scriptamat.2017.05.012⟩ Article dans une revue istex hal-01765929v1
New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint Nicolas Rolland,François Vurpillot,Sébastien Duguay,Baishakhi Mazumder,James Specket al. Microscopy and Microanalysis, 2017, 23 (02), pp.247 - 254. ⟨10.1017/s1431927617000253⟩ Article dans une revue hal-01766098v1
Influence of Na on grain boundary and properties of Cu(In,Ga)Se 2 solar cells Mohit Raghuwanshi,Emmanuel Cadel,Sébastien Duguay,Ludovic Arzel,Nicolas Barreauet al. Progress in Photovoltaics, 2017, 25 (5), pp.367 - 375. ⟨10.1002/pip.2869⟩ Article dans une revue hal-01720935v1
Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography D. Blavette,Sébastien Duguay Journal of Applied Physics, 2016, 119 (18), pp.181502. ⟨10.1063/1.4948238⟩ Article dans une revue hal-01928847v1
Accuracy of analyses of microelectronics nanostructures in atom probe tomography François Vurpillot,Nicolas Rolland,Robert Estivill,Sébastien Duguay,D. Blavette Semiconductor Science and Technology, 2016, 31 (7), pp.074002. ⟨10.1088/0268-1242/31/7/074002⟩ Article dans une revue hal-01928850v1
Atom-Scale Compositional Distribution in InAlAsSb-Based Triple Junction Solar Cells by Atom Probe Tomography J Hernández-Saz,M Herrera,F J Delgado,Sébastien Duguay,T Philippeet al. Nanotechnology, 2016, 27 (30), pp.305402. ⟨10.1088/0957-4484/27/30/305402⟩ Article dans une revue hal-01954209v1
Atom Probe Tomography Analysis of InAlGaAs Capped InAs/GaAs Stacked Quantum Dots with Variable Barrier Layer Thickness J. Hernández-Saz,M. Herrera,S.I. Molina,C.R. Stanley,Sébastien Duguay Acta Materialia, 2016, 103, pp.651-657. ⟨10.1016/j.actamat.2015.10.048⟩ Article dans une revue hal-01954206v1
Quantitative analysis of Si/SiGeC superlattices using atom probe tomography Robert Estivill,Adeline Grenier,Sébastien Duguay,François Vurpillot,Tanguy Terlieret al. Ultramicroscopy, 2015, 159, pp.223-231. ⟨10.1016/j.ultramic.2015.03.014⟩ Article dans une revue hal-02107589v1
Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells N. Fernández-Delgado,M. Herrera,S.I. Molina,Celia Castro,Sébastien Duguayet al. Applied Surface Science, 2015, 359, pp.676-678. ⟨10.1016/j.apsusc.2015.10.161⟩ Article dans une revue istex hal-02111986v1
Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques A. Grenier,Sébastien Duguay,J. P. Barnes,R. Serra,Nicolas Rollandet al. Applied Physics Letters, 2015, 106 (21), pp.213102. ⟨10.1063/1.4921352⟩ Article dans une revue hal-01928856v1
An analytical model accounting for tip shape evolution during atom probe analysis of heterogeneous materials Nicolas Rolland,D. J. Larson,B. P. Geiser,Sébastien Duguay,François Vurpillotet al. Ultramicroscopy, 2015, 159, pp.195--201. ⟨10.1016/j.ultramic.2015.03.010⟩ Article dans une revue istex hal-01928854v1
3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs J. Hernández-Saz,M. Herrera,S.I. Molina,C.R. Stanley,Sébastien Duguay Scripta Materialia, 2015, 103, pp.73-76. ⟨10.1016/j.scriptamat.2015.03.013⟩ Article dans une revue istex hal-02177759v1
Quantitative investigation of SiGeC layers using atom probe tomography Robert Estivill,Adeline Grenier,Sébastien Duguay,François Vurpillot,Tanguy Terlieret al. Ultramicroscopy, 2015, 150, pp.23--29. ⟨10.1016/j.ultramic.2014.11.020⟩ Article dans une revue istex hal-01928855v1
Dynamic evolution and fracture of multilayer field emitters in atom probe tomography: a new interpretation Nicolas Rolland,François Vurpillot,Sébastien Duguay,Didier Blavette European Physical Journal: Applied Physics, 2015, 72 (2), pp.21001. ⟨10.1051/epjap/2015150233⟩ Article dans une revue istex hal-02107622v1
A Meshless Algorithm to Model Field Evaporation in Atom Probe Tomography Nicolas Rolland,François Vurpillot,Sébastien Duguay,Didier Blavette Microscopy and Microanalysis, 2015, 21 (6), pp.1649-1656. ⟨10.1017/S1431927615015184⟩ Article dans une revue hal-02107013v1
Atomic scale characterization of SiO&lt;inf&gt;2&lt;/inf&gt;/4H-SiC interfaces in MOSFETs devices Anna Maria Beltrán,Sébastien Duguay,Christian Strenger,Anton J Bauer,Fuccio Cristianoet al. Solid State Communications, 2015, 221, pp.28-32. ⟨10.1016/j.ssc.2015.08.017⟩ Article dans une revue hal-01720451v1
Influence of boron clustering on the emitter quality of implanted silicon solar cells: An atom probe tomography study Mohit Raghuwanshi,Adeline Lanterne,Jérôme Le Perchec,Philippe Pareige,Emmanuel Cadelet al. Progress in Photovoltaics, 2015, 23 (12), pp.1724--1733. ⟨10.1002/pip.2607⟩ Article dans une revue istex hal-01929136v1
Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon Yang Qiu,Fuccio Cristiano,Karim Huet,Fulvio Mazzamuto,Giuseppe Fisicaroet al. Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩ Article dans une revue hal-01659180v1
Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2solar cells M. Raghuwanshi,E. Cadel,Philippe Pareige,S. Duguay,F. Couzinie-Devyet al. Applied Physics Letters, 2014, 105 (1), pp.013902. ⟨10.1063/1.4890001⟩ Article dans une revue hal-01929138v1
Atom-probe tomography study of boron precipitation in highly implanted silicon Didier Blavette,Huiyuan Wang,Manon Bonvalet,Florian Hüe,Sébastien Duguay Physica Status Solidi A (applications and materials science), 2014, 211 (1), pp.126--130. ⟨10.1002/pssa.201300127⟩ Article dans une revue istex hal-01928861v1
3D analysis of advanced nano-devices using electron and atom probe tomography A. Grenier,Sébastien Duguay,J. P. Barnes,R. Serra,G. Haberfehlneret al. Ultramicroscopy, 2014, 136, pp.185--192. ⟨10.1016/j.ultramic.2013.10.001⟩ Article dans une revue hal-01929139v1
Atom probe tomography in nanoelectronics Didier Blavette,Sébastien Duguay European Physical Journal: Applied Physics, 2014, 68 (1), pp.10101. ⟨10.1051/epjap/2014140060⟩ Article dans une revue hal-01928859v1
Efficient n-type doping of Si nanocrystals embedded in SiO&lt;sub&gt;2&lt;/sub&gt; by ion beam synthesis R. Khelifi,D. Mathiot,Rajiv Gupta,D. Muller,M. Rousselet al. Applied Physics Letters, 2013, 102, pp.013116_1-4 Article dans une revue hal-00799830v1
Point process statistics in atom probe tomography Thomas Philippe,Sébastien Duguay,G. Grancher,D. Blavette Ultramicroscopy, 2013, 132, pp.114--120. ⟨10.1016/j.ultramic.2012.10.004⟩ Article dans une revue istex hal-01928863v1
Advance in multi-hit detection and quantization in atom probe tomography Gérald da Costa,H. Wang,Sébastien Duguay,A. Bostel,D. Blavetteet al. Review of Scientific Instruments, 2012, 83 (12), ⟨10.1063/1.4770120⟩ Article dans une revue hal-01928866v1
Temperature dependence of nucleation rate in a binary solid solution Huiyuan Wang,T. Philippe,S. Duguay,D. Blavette Philosophical Magazine Letters, 2012, 92 (12), pp.718--725. ⟨10.1080/09500839.2012.725948⟩ Article dans une revue hal-01928868v1
Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation T. Philippe,S. Duguay,D. Mathiot,D. Blavette Journal of Applied Physics, 2011, 109, pp. 023501_1-4 Article dans une revue hal-00597120v1
Atomic-scale study of the role of carbon on boron clustering Thomas Philippe,Sébastien Duguay,J.J. Grob,D. Mathiot,D. Blavette Thin Solid Films, 2010, 518, pp. 2406-2408. ⟨10.1016/j.tsf.2009.08.022⟩ Article dans une revue istex hal-00464139v1
Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate Sébastien Duguay,M. Ngamo,P. F Fazzini,Fuccio Cristiano,K. Daoudet al. Thin Solid Films, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩ Article dans une revue istex hal-01922657v1
Direct imaging of boron segregation to extended defects in silicon Sébastien Duguay,Thomas Philippe,Fuccio Cristiano,D. Blavette Applied Physics Letters, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩ Article dans une revue hal-01922903v1
Atomic-scale redistribution of dopants in polycrystalline silicon layers S. Duguay,A. Colin,D. Mathiot,Pascal Morin,D. Blavette Applied Physics, 2010, 108, pp.034911_1-7 Article dans une revue hal-00526353v1
Clustering and nearest neighbour distances in atom probe tomography: The influence of the interfaces Thomas Philippe,O. Cojocaru-Mirédin,Sébastien Duguay,D. Blavette Journal of Microscopy, 2010, 239 (1), pp.72--77. ⟨10.1111/j.1365-2818.2009.03359.x⟩ Article dans une revue hal-01928875v1
Clustering and pair correlation function in atom probe tomography Thomas Philippe,Sébastien Duguay,D. Blavette Ultramicroscopy, 2010, 110 (7), pp.862--865. ⟨10.1016/j.ultramic.2010.03.004⟩ Article dans une revue istex hal-01928874v1
Clustering and nearest neighbour distances in atom-probe tomography Thomas Philippe,F. de Geuser,Sébastien Duguay,Williams Lefebvre,O. Cojocaru-Mirédinet al. Ultramicroscopy, 2009, 109, pp.1304-1309. ⟨10.1016/j.ultramic.2009.06.007⟩ Article dans une revue istex hal-00457542v1
Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors Emmanuel Cadel,François Vurpillot,Rodrigue Lardé,Sébastien Duguay,Bernard Deconihout Journal of Applied Physics, 2009, 106 (4), pp.044908. ⟨10.1063/1.3186617⟩ Article dans une revue hal-01929144v1
Evidence of atomic-scale arsenic clustering in highly doped silicon Sébastien Duguay,François Vurpillot,Thomas Philippe,E. Cadel,Rodrigue Lardéet al. Journal of Applied Physics, 2009, 106 (10), pp.106102. ⟨10.1063/1.3257178⟩ Article dans une revue hal-01929143v1
Structural analysis of annealed amorphous SiO/SiO2 superlattice B. Pivac,P. Dubcek,I. Capan,H. Zorc,S. Bernstorffet al. Thin Solid Films, 2008, 516, pp. 6796-6799 Article dans une revue hal-00300610v1
Silicon nanoparticles formation in annealed SiO/SiO2 multilayers I. Kovacevic,P. Dubcek,S. Duguay,H. Zorc,N. Radicet al. Physica E: Low-dimensional Systems and Nanostructures, 2007, 38, pp. 50-53 Article dans une revue hal-00349867v1
Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers S. Duguay,S. Burignat,P. Kern,J.J. Grob,A. Souifiet al. Semicond. Sci. Technol., 2007, 22, pp. 837-842 Article dans une revue hal-00250270v1
Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry M. Mansour,A. En Naciri,L. Johann,S. Duguay,J.J. Grobet al. Journal of Physics and Chemistry of Solids, 2006, 67, pp.1291-1294 Article dans une revue hal-00207770v1
Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing Sébastien Duguay,J.J. Grob,A. Slaoui,Y. Le Gall,M. Amann-Liess Journal of Applied Physics, 2005, 97, pp.104330_1-5 Article dans une revue hal-00134846v1
Structural properties of Ge-implanted SiO2 layers and related MOS memory effects S. Duguay,A. Slaoui,Grob J.J.,M. Kanoun,S. Burignatet al. Mater. Sci. Eng. B, 2005, 124-125, pp.488-493 Article dans une revue hal-00207848v1

Communication dans un congrès (20)

Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test El Mehdi Meknassi,Niemat Moultif,Sébastien Duguay,Benoit Lambert,Gabriel Bertaoet al. ESREF 2025 - 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France Communication dans un congrès hal-05323093v2
Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO 2 Rémi Demoulin,Manuel Roussel,Sébastien Duguay,D. Muller,D. Mathiotet al. Microscopy & Microanalysis 2019, Aug 2019, Portland, United States. pp.2540-2541, ⟨10.1017/S1431927619013436⟩ Communication dans un congrès hal-02294165v1
Combining TEM and APT for a Better Understanding of Super High Efficiency Cu(In,Ga)Se2 Thin Film Solar Cells Celia Castro,Mohit Raghuwanshi,Philippe Pareige,Sébastien Duguay,Emmanuel Cadelet al. European Microscopy Society Congress 2016, Dec 2016, Lyon, France. pp.914-915, ⟨10.1002/9783527808465.EMC2016.6800⟩ Communication dans un congrès hal-01954234v1
Atom‐Probe Tomography and Nanosciences Didier Blavette,Isabelle Mouton,Sébastien Duguay European Microscopy Congress 2016: Proceedings, Aug 2016, Lyon, France Communication dans un congrès hal-02108167v1
Synthèse et analyse de nanoparticules de silicium dans une couche mince diélectrique par dépôt chimique en phase vapeur – Synthèse et dopage de nanoparticules par implantation et co-implantation ionique dans une matrice de silicium et de SiO2 G. Ferblantier,F. Ehrhardt,C. Ulhaq-Bouillet,A. Slaoui,D. Mulleret al. Journées du GdR NACRE, 2015, Oléron, France Communication dans un congrès hal-05489132v1
Extended defects in ion-implanted si during nanosecond laser annealing Fuccio Cristiano,Y. Qiu,Eléna Bedel-Pereira,Karim Huet,Fulvio Mazzamutoet al. Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩ Communication dans un congrès hal-01721156v1
Synthèse par faisceaux d'ion et caractérisation de nanocristaux de silicium dopés dans SiO SiO&lt;sub&gt;2&lt;/sub&gt; R. Khelifi,D. Mathiot,D. Muller,S. Duguay 13èmes Journées de la Matière Condensée (JMC13), Aug 2012, Montpellier, France Communication dans un congrès hal-00743238v1
Co-implantation: A simple way to grow doped Si nanocrystals embedded in SiO&lt;sub&gt;2&lt;/sub&gt; D. Mathiot,R. Khelifi,D. Muller,S. Duguay Material Research Society (MRS) Spring Meeting, Symposium on Nanoscale Materials Modification by Photon, Ion, and Electron Beams, Apr 2012, San Francisco, United States. pp.mrss12-1455-ii08-21 Communication dans un congrès hal-00697568v1
Modeling of boron diffusion in silicon: Influence of precipitation H. Wang,T. Philippe,J. Marcon,S. Duguay,D. Mathiotet al. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III, May 2012, Strasbourg, France Communication dans un congrès hal-00743292v1
Atomic-scale study of the role of carbon on boron clustering T. Philippe,S. Duguay,J.J. Grob,D. Mathiot,D. Blavette European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon and Germanium issues for future CMOS devices, Jun 2009, Strasbourg, France. pp.2406-2408 Communication dans un congrès hal-00409615v1
Modeling artifacts in the analysis of test semiconductor structures in atom probe tomography François Vurpillot,M. Gruber,S. Duguay,E. Cadel,Bernard Deconihout AIP Conference Proceedings, 2009, Unknown, Unknown Region. pp.175--180, ⟨10.1063/1.3251216⟩ Communication dans un congrès hal-01929146v1
Structural analysis of annealed amorphous SiO/SiO2 superlattice B. Pivac,P. Dubcek,I. Capan,H. Zorc,S. Bernstorffet al. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France Communication dans un congrès hal-00303670v1
Si nanostructures formation in SiO/SiO2 superlattice for next generation solar cells B. Pivac,I. Capan,P. Dubcek,N. Radic,S. Duguayet al. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France Communication dans un congrès hal-00252112v1
Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory properties S. Duguay,J.J. Grob,A. Slaoui,P. Kern Material Research Society (MRS) Spring Meeting, Symposium on Science and Technology of Nonvolatile Memories, Apr 2006, SAN FRANCISCO, United States. p. G02-05 Communication dans un congrès hal-00204821v1
Substrate temperature dependence of Si nanostructures formation in SiO/SiO2 superlattice B. Pivac,I. Capan,P. Dubcek,N. Radic,S. Bernstorffet al. European Material Research Society (E-MRS) Spring Conference, Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications, May 2007, Strasbourg, France Communication dans un congrès hal-00252113v1
Propriétés structurales de couches de SiO&lt;sub&gt;2&lt;/sub&gt; implantées germanium et application aux mémoires à nanocristaux S. Duguay IXèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2006), 2006, Rennes, France Communication dans un congrès hal-00081227v1
Silicon nanoparticles formation in annealed SiO/SiO2 multilayers I. Kovacevic,P. Dubcek,S. Duguay,H. Zorc,N. Radicet al. European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon Nanocrystals for Electronics and Sensing Applications, 2006, Nice, France Communication dans un congrès hal-00350341v1
Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry M. Mansour,A. En Naciri,L. Johann,S. Duguay,J.J. Grobet al. 13th International Symposium on Intercalation Compounds, Jun 2006, Clermont-Ferrand, France Communication dans un congrès hal-00207775v1
Structural properties of Ge-implanted SiO&lt;sub&gt;2&lt;/sub&gt; layers and related MOS memory effects S. Duguay,A. Slaoui,J.J. Grob,M. Kanoun,S. Burignatet al. European Material Research Society (E-MRS) Spring Conference, Symposium on Materials Science and Device Issues for Future Si-based Technologies, 2005, Strasbourg, France Communication dans un congrès hal-00021653v1
Fabrication de nanocristaux de germanium par implantation ionique et applications à effet mémoire, S. Duguay VIIIèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2005), May 2005, Paris, France Communication dans un congrès hal-00134842v1

Brevet (1)

NANOFILAMENTS D'ALLIAGE DE GESN, PREPARATION ET APPLICATIONS Pere Roca I Cabarrocas Roca I Cabarrocas,Wanghua Chen,Sébastien Duguay,Philippe Pareige,Edy Azrak France, N° de brevet: WO2019166486. 2019 Brevet hal-02303270v1

Thèse (1)

Propriétés de stockage de charges de nanocristaux de germanium incorporés dans des couches de silice par implantation ionique S. Duguay Micro et nanotechnologies/Microélectronique. Unuiversité de Strasbourg I, 2006. Français. ⟨NNT : ⟩ Thèse hal-00211889v1

HDR (1)

La sonde atomique tomographique pour l’étude des dispositifs semi-conducteurs et des procédés Sébastien Duguay Instrumentations et Détecteurs [physics.ins-det]. Université de Rouen Normandie, 2022 HDR tel-05577222v1