Sourav De

Publications

Article dans une revue (2)

Insights into Oxygen Vacancy Effects on Ferroelectric Behavior of Hafnium Oxide: A Review Gautham Kumar,Agniva Paul,Apu Das,Guilhem Larrieu,Sourav De Physica Status Solidi A (applications and materials science), 2025, 222 (17), ⟨10.1002/pssa.202500376⟩ Article dans une revue hal-05265492v1
Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing Agniva Paul,Gautham Kumar,Apu Das,Guilhem Larrieu,Sourav De Journal of Applied Physics, 2025, 138, pp.010701. ⟨10.1063/5.0278057⟩ Article dans une revue hal-05226133v1

Communication dans un congrès (2)

Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications Jing-Hua Hsuen,Hsien-Yang Liu,Maximillian Lederer,Yannick Raffel,Konrad Seidelet al. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France Communication dans un congrès hal-05369211v1
Exploring the Potential of Hafnium Oxide-Based Ferroelectric Memories for Next-Generation Storage Class Memories Sourav De Electron Device Technology and Manufacturing Conference, IEEE, Mar 2025, Hong Kong (China), China Communication dans un congrès hal-04786909v1

Chapitre d'ouvrage (1)

Hafnium Oxide-Based Ferroelectric Memories: Applications and Future Prospects Sourav De,Gautham Kumar,Ankush Chattopadhyay,Yannick Raffel,Bhaswar Chakrabartiet al. Non-Volatile Memory and Selector Devices: Technology and Applications, In press Chapitre d'ouvrage hal-04856831v1

Pré-publication, Document de travail (1)

Direct Evidence of Interface-Driven Endurance Degradation in Hafnium-Oxide FeFETs: Stable Polarization Response of the Gate Stack in Degraded FeFETs Apu Das,Agniva Paul,Asim Senapati,Zhao-Feng Lou,Gautham Kumaret al. 2025 Pré-publication, Document de travail hal-05332345v1