Sreejith Pallikkara Chandrasekharan

Identifiants chercheurs

IdHAL :

sreejith-pallikkara-chandrasekharan

ORCID :

0000-0002-0822-1831

Présentation

Education:2025: Doctor of Philosophy - PhD, Materials and Devices for Electronics and Photonics, INSA Rennes, France2021: Master's Degree in Physics (Computational Physics), Central University of Punjab, India

About:Sreejith Pallikkara Chandrasekharan is now a Post Doctotal Researcher at the INSA Rennes (FOTON Institute - CNRS UMR 6082). His research focuses on understanding of physical processes in III-V semiconductor nanostructures for silicon photonics. The polar surface and interface energies of semiconductors, first principles simulation of the growth, mechanical stability, electronic, and optical properties of semiconductors, and electronic structure theory beyond the DFT are some of his latest scientific interests.

Publications

Article dans une revue (4)

Computational Assessment of Nonpolar and Polar GaP Terminations for Photoelectrochemical Water Splitting Sofia Apergi,Sreejith Pallikkara Chandrasekharan,C. Cornet,Laurent Pedesseau The Journal of physical chemistry, 2025, 129 (36), pp.16308-16318. ⟨10.1021/acs.jpcc.5c03423⟩ Article dans une revue hal-05230228v1
Inevitable Si surface passivation prior to III-V/Si epitaxy: Strong impact on wetting properties S Pallikkara Chandrasekharan,D Gupta,C Cornet,L Pedesseau Physical Review B, 2024, 109 (4), pp.045304. ⟨10.1103/physrevb.109.045304⟩ Article dans une revue hal-04429691v1
Carcinogenic dioxane detection using pristine and metal-doped 2D VSe2: Insights from density functional theory simulations Sreejith Pallikkara Chandrasekharan,Seetha Lakshmy,Saju Joseph,Nandakumar Kalarikkal AIP Advances, 2023, 13 (6), pp.065024. ⟨10.1063/5.0139779⟩ Article dans une revue hal-04198629v1
Determination of III-V/Si absolute interface energies: impact on wetting properties S. Pallikkara Chandrasekharan,I. Lucci,D. Gupta,C. Cornet,L. Pedesseau Physical Review B, 2023, 108 (7), pp.075305. ⟨10.1103/PhysRevB.108.075305⟩ Article dans une revue hal-04224894v2

Communication dans un congrès (7)

Predictions of Wulff-Kaischew equilibrium shapes during heteroepitaxial Growth of III-V on Si: DFT and in-situ Experiments Sreejith Pallikkara Chandrasekharan,Sofia Apergi,Wei Chen,Federico Panciera,Laurent Traverset al. APS Global Physics Summit 2025, American Physical Society (APS), Mar 2025, Anaheim, California, United States Communication dans un congrès hal-05212796v1
III-V/Si Heteroepitaxy: Understanding and Mastering Growth Fundamentals Sreejith Pallikkara Chandrasekharan,Audrey Gilbert,Chen Wei,Federico Panciera,Laurent Traverset al. 24th American Conference on Crystal Growth and Epitaxy (ACCGE-24), Jul 2025, Stevenson, United States Communication dans un congrès hal-05204877v1
Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapes Sreejith Pallikkara Chandrasekharan,Sofia Apergi,Chen Wei,Federico Panciera,Laurent Traverset al. GDR MatEpi, CNRS, Nov 2025, Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) in Villeneuve-d'Ascq, France Communication dans un congrès hal-05357086v1
Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundaries Divishth Gutpa,Sreejith Pallikkara Chandrasekharan,Simon Thébaud,Laurent Pedesseau,Charles Cornet EMRS spring meeting 2024, May 2024, Strasbourg, France Communication dans un congrès hal-04745358v1
Understanding III-V/Si Heteroepitaxy: Experiments and Theory Charles Cornet,Audrey Gilbert,Sreejith Pallikkara Chandrasekharan,Divishth Gupta,Laurent Ceruttiet al. 8th European conference on crystal growth, Jul 2024, Warsaw, Poland Communication dans un congrès hal-04745129v1
III-V/Si epitaxial growth and antiphase domains: a matter of symmetry C. Cornet,Sreejith Pallikkara Chandrasekharan,Audrey Gilbert,Divita Gupta,Philippe Vennéguèset al. OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France Communication dans un congrès hal-04738319v1
Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations Sreejith Pallikkara Chandrasekharan,D Gupta,Anne Ponchet,Gilles Patriarche,Jean-Baptiste Rodriguezet al. “Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France Communication dans un congrès hal-04224975v1

Poster de conférence (5)

Atomic scale description of III-V/Si (001) heteroepitaxial crystals Sreejith Pallikkara Chandrasekharan,Fauzia Jabeen,Charles Cornet,Laurent Pedesseau 23rd International Conference on Molecular-Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan Poster de conférence hal-04745307v1
Heteroepitaxial growth of III-V on Si: a DFT perspective Sreejith Pallikkara Chandrasekharan,Divishth Gutpa,Charles Cornet,Laurent Pedesseau 36th International Confererence on the Physics of Semiconductors 2024., Jul 2024, Ottawa, Canada Poster de conférence hal-04745324v1
Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristics Sreejith Pallikkara Chandrasekharan,Ida Lucci,Divishth Gutpa,Charles Cornet,Laurent Pedesseau Journées Surfaces & Interfaces 2024, Jan 2024, Grenoble, France Poster de conférence hal-04417767v1
Impact of initial surface passivation on wetting properties analysis during III-V/Si epitaxy Sreejith Pallikkara Chandrasekharan,Divishth Gutpa,C. Cornet,Laurent Pedesseau E-MRS 2024 Spring meeting, May 2024, Strasbourg, France Poster de conférence hal-04597986v1
Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculations Sreejith Pallikkara Chandrasekharan,Divishth Gutpa,Laurent Pedesseau,Charles Cornet Journée Scientifique SFP-SCF Bretagne & Pays de Loire 2023, May 2023, Rennes, France. 2023 Poster de conférence hal-04110076v2