Stéphane Vézian

Publications

Article dans une revue (51)

Defect formation energy of impurities in 2D materials: How does data engineering shape machine learning model selection? A. El Alouani,M. Al Khalfioui,A. Michon,S. Vézian,P. Boucaudet al. Materials Today Physics, 2026, 61, pp.102006. ⟨10.1016/j.mtphys.2025.102006⟩ Article dans une revue hal-05504904v1
Effects of Substrate Miscut on Growth Instabilities in Homoepitaxially Grown GaN/AlGaN System Henryk Teisseyre,Stéphane Vézian,Piotr Wojnar,Robert Kucharski,Tomasz Sochackiet al. Crystal Growth & Design, 2026, 26 (6), pp.2396-2405. ⟨10.1021/acs.cgd.5c01733⟩ Article dans une revue hal-05582184v1
GaN Mid‐IR Plasmonics: Low‐Loss Epsilon‐Near‐Zero Modes Julia Inglés‐cerrillo,Maria Villanueva‐blanco,Benjamin Damilano,Stéphane Vézian,Miguel Montes Bajoet al. Advanced Optical Materials, 2026, 14 (16), pp.e03829. ⟨10.1002/adom.202503829⟩ Article dans une revue hal-05582187v1
Complete magnetization compensation in the intrinsic ferromagnetic semiconductor Gd x Sm 1 − x N J. Miller,H. Trodahl,M. Al Khalfioui,Stéphane Vézian,B. Ruck Physical Review Materials, 2025, 9 (4), pp.L041401. ⟨10.1103/PhysRevMaterials.9.L041401⟩ Article dans une revue hal-05021582v1
Investigation of MoS&lt;sub&gt;2&lt;/sub&gt; growth on GaN/sapphire substrate using molecular beam epitaxy Mohamed Al Khalfioui,Minh Tuan Dau,Zineb Bouyid,Ileana Florea,Philippe Vennéguèset al. Journal of Crystal Growth, 2025, 652, pp.128047. ⟨10.1016/j.jcrysgro.2024.128047⟩ Article dans une revue hal-05224730v1
Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids Amélie Dussaigne,Colin Paillet,Névine Rochat,David Cooper,Adeline Grenieret al. Communications Materials, 2024, 5 (1), pp.280. ⟨10.1038/s43246-024-00725-8⟩ Article dans une revue hal-05219604v1
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion B. Damilano,R. Aristégui,H. Teisseyre,S. Vézian,V. Guigozet al. Journal of Applied Physics, 2024, 135 (9), ⟨10.1063/5.0182659⟩ Article dans une revue hal-04489504v1
Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates Masato Takiguchi,Sylvain Sergent,Benjamin Damilano,Stéphane Vézian,Sébastien Chenotet al. ACS photonics, 2024, 11 (2), pp.789-794. ⟨10.1021/acsphotonics.3c01735⟩ Article dans une revue hal-04489537v1
Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si$_x$N$_y$ B Damilano,S. Vézian,J. Brault,P Ruterana,B. Gilet al. Nanotechnology, 2023, 34 (24), pp.245602. ⟨10.1088/1361-6528/acc3a2⟩ Article dans une revue hal-04248760v1
Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN Jackson Miller,Harry Joseph Trodahl,Mohamed Al Khalfioui,Stéphane Vézian,Benjamin John Ruck Applied Physics Letters, 2023, 122 (9), ⟨10.1063/5.0131472⟩ Article dans une revue hal-04903745v1
Descriptor engineering in machine learning regression of electronic structure properties for 2D materials Minh Tuan Dau,Mohamed Al Khalfioui,Adrien Michon,Antoine Reserbat-Plantey,Stéphane Vézianet al. Scientific Reports, 2023, 13, ⟨10.1038/s41598-023-31928-7⟩ Article dans une revue hal-04058161v1
Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN Caroline Elias,Maud Nemoz,Hélène Rotella,Frédéric Georgi,Stéphane Vézianet al. APL Materials, 2023, 11 (3), ⟨10.1063/5.0139588⟩ Article dans une revue hal-04240341v1
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Benjamin Damilanoet al. Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩ Article dans une revue hal-03467546v1
Light Polarization in Tunnel Junction Injected UV Light‐Emitting Diodes Jean-Yves Duboz,Victor Fan Arcara,Cynthia Kessaci,Stéphane Vézian,Benjamin Damilano Physica Status Solidi A (applications and materials science), 2022, 219 (7), pp.2200055. ⟨10.1002/pssa.202200055⟩ Article dans une revue hal-03828269v1
Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence Benjamin Damilano,Stéphane Vézian,Marie-Pierre Chauvat,Pierre Ruterana,Nuño Amador-Méndezet al. Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩ Article dans une revue hal-03865257v1
Enhanced Sm spin projection in Gd x Sm 1 − x N Jackson Miller,James Mcnulty,Benjamin John Ruck,Mohamed Al Khalfioui,Stéphane Vézianet al. Physical Review B, 2022, 106 (17), pp.174432. ⟨10.1103/PhysRevB.106.174432⟩ Article dans une revue hal-04903861v1
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Maud Nemozet al. Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩ Article dans une revue hal-03741626v1
Porous Nitride Light-Emitting Diodes Nuño Amador-Mendez,Tiphaine Mathieu-Pennober,Stéphane Vézian,Marie-Pierre Chauvat,Magali Moraleset al. ACS photonics, 2022, 9 (4), pp.1256-1263. ⟨10.1021/acsphotonics.1c01729⟩ Article dans une revue hal-03864353v1
Bandwidth Unlimited Polarization-Maintaining Metasurfaces Q. Song,S. Khadir,S. Vézian,B. Damilano,P. D Mierryet al. Science Advances , 2021, 7 (5), ⟨10.1126/sciadv.abe1112⟩ Article dans une revue hal-03582572v1
Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization D. Cooper,V. Fan Arcara,B. Damilano,L. Amichi,A. Mavelet al. Journal of Applied Physics, 2021, 130 (2), pp.025704. ⟨10.1063/5.0054810⟩ Article dans une revue hal-03418879v1
Bandwidth-unlimited polarization-maintaining metasurfaces Q Song,S Khadir,S Vézian,B Damilano,P D Mierryet al. Science Advances , 2021 Article dans une revue hal-03436097v1
Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Benjamin Damilanoet al. Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩ Article dans une revue hal-03035072v1
Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces Qinghua Song,Arthur Baroni,Pin Chieh Wu,Sébastien Chenot,Virginie Brandliet al. Nature Communications, 2021, 12, pp.3631. ⟨10.1038/s41467-021-23908-0⟩ Article dans une revue hal-03111022v2
Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires Kelly W Mauser,Magdalena Solà-Garcia,Matthias Liebtrau,Benjamin Damilano,Pierre-Marie Coulonet al. ACS Nano, 2021, 15 (7), pp.11385-11395. ⟨10.1021/acsnano.1c00850⟩ Article dans une revue hal-03418883v1
InGaN islands and thin films grown on epitaxial graphene C Paillet,S. Vézian,C. Matei,A. Michon,B. Damilanoet al. Nanotechnology, 2020, 31 (40), pp.405601. ⟨10.1088/1361-6528/ab98bd⟩ Article dans une revue hal-03024853v1
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction E. Di Russo,A. Mavel,V Fan Arcara,B. Damilano,Ioanna Dimkouet al. Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩ Article dans une revue hal-03024837v1
Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays Pierre-Marie Coulon,Peng Feng,Benjamin Damilano,Stephane Vezian,Tao Wanget al. Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-62539-1⟩ Article dans une revue hal-03024881v1
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction. E Di Russo,A Mavel,V Fan Arcara,B Damilano,Ioanna Dimkouet al. Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩ Article dans une revue hal-03411352v1
Printing polarization and phase at the optical diffraction limit: near and far-field optical encryption Qinghua Song,Samira Khadir,Stéphane Vézian,Benjamin Damilano,Philippe de Mierryet al. Nanophotonics, 2020, 10 (1), pp.697-704. ⟨10.1515/nanoph-2020-0352⟩ Article dans une revue hal-03582590v1
Revealing topological phase in Pancharatnam-Berry metasurfaces using mesoscopic electrodynamics Zhanjie Gao,Sandeep Golla,Rajath Sawant,Vladimir Osipov,Gauthier Briereet al. Nanophotonics, 2020, 9 (16), pp.4711-4718. ⟨10.1515/nanoph-2020-0365⟩ Article dans une revue hal-03582593v1
Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces Qinghua Song,Arthur Baroni,Rajath Sawant,Peinan Ni,Virginie Brandliet al. Nature Communications, 2020, 11, pp.2651. ⟨10.1038/s41467-020-16437-9⟩ Article dans une revue hal-02635286v1
Lasing up to 380 K in a sublimated GaN nanowire S. Sergent,B. Damilano,S. Vézian,S. Chenot,T. Tsuchizawaet al. Applied Physics Letters, 2020, 116 (22), pp.223101. ⟨10.1063/5.0004771⟩ Article dans une revue hal-03024869v1
Magnetoresistance of epitaxial GdN films Tanmay Maity,Harry Joseph Trodahl,Simon Granville,Stéphane Vézian,Franck Nataliet al. Journal of Applied Physics, 2020, 128 (21), ⟨10.1063/5.0022950⟩ Article dans une revue hal-04903902v1
Optimization and uncertainty quantification of gradient index metasurfaces Nikolai Schmitt,Niklas Georg,Gauthier Brière,Dimitrios Loukrezis,Sébastien Héronet al. Optical Materials Express, 2019, 9 (2), pp.892. ⟨10.1364/OME.9.000892⟩ Article dans une revue hal-02433053v1
Metasurface orbital angular momentum holography Haoran Ren,Gauthier Briere,Xinyuan Fang,Peinan Ni,Rajath Sawantet al. Nature Communications, 2019, 10, ⟨10.1038/s41467-019-11030-1⟩ Article dans une revue hal-02304950v1
Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics Sylvain Sergent,Benjamin Damilano,Stephane Vezian,Sébastien Chenot,Masato Takiguchiet al. ACS photonics, 2019, 6 (12), pp.3321-3330. ⟨10.1021/acsphotonics.9b01435⟩ Article dans une revue hal-03024899v1
Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes V. Fan Arcara,B. Damilano,G. Feuillet,S. Vezian,K. Ayadiet al. Journal of Applied Physics, 2019, 126 (22), pp.224503. ⟨10.1063/1.5121379⟩ Article dans une revue hal-02569339v1
Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation Benjamin Damilano,Pierre-Marie Coulon,Stephane Vézian,Virginie Brandli,Jean-Yves Dubozet al. Applied Physics Express, 2019, 12 (4), pp.045007. ⟨10.7567/1882-0786/ab0d32⟩ Article dans une revue hal-02304928v1
An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces Gauthier Brière,Peinan Ni,Sébastien Héron,Sebastien Chenot,Stephane Vézianet al. Advanced Optical Materials, 2019, 7 (14), pp.1801271. ⟨10.1002/adom.201801271⟩ Article dans une revue hal-02118940v1
Displacement Talbot Lithography for nano-engineering of III-nitride materials Pierre-Marie Coulon,Benjamin Damilano,Blandine Alloing,Pierre Chausse,Sebastian Waldeet al. Microsystems & Nanoengineering, 2019, 5 (1), ⟨10.1038/s41378-019-0101-2⟩ Article dans une revue hal-03024884v1
Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate Benjamin Damilano,Stéphane Vézian,Jean Massies physica status solidi (b), 2018, 255 (5), pp.1700392. ⟨10.1002/pssb.201700392⟩ Article dans une revue hal-03553871v1
Enhanced excitonic emission efficiency in porous GaN Thi Huong Ngo,Bernard Gil,T. Shubina,B. Damilano,Stephane Vezianet al. Scientific Reports, 2018, 8, pp.15767. ⟨10.1038/s41598-018-34185-1⟩ Article dans une revue hal-01905654v1
Electron transport in heavily doped GdN Tanmay Maity,Harry Joseph Trodahl,Franck Natali,Benjamin John Ruck,Stéphane Vézian Physical Review Materials, 2018, 2 (1), pp.014405. ⟨10.1103/PhysRevMaterials.2.014405⟩ Article dans une revue hal-04903988v1
Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN C.-M. Lee,Julia Schacht,Harry Warring,Harry Joseph Trodahl,Benjamin John Rucket al. Journal of Applied Physics, 2018, 123 (11), ⟨10.1063/1.5020081⟩ Article dans une revue hal-04903963v1
Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation B. Damilano,S. Vézian,J. Massies Optics Express, 2017, 25 (26), pp.33243. ⟨10.1364/oe.25.033243⟩ Article dans une revue hal-03553879v1
Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication Benjamin Damilano,S. Vézian,J. Brault,B. Alloing,J. Massies Nano Letters, 2016, 16 (3), pp.1863-1868. ⟨10.1021/acs.nanolett.5b04949⟩ Article dans une revue hal-05223993v1
Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition A. Michon,Antoine Tiberj,S. Vezian,E. Roudon,D. Lefebvreet al. Applied Physics Letters, 2014, 104 (7), pp.071912. ⟨10.1063/1.4866285⟩ Article dans une revue hal-01200742v1
Role of magnetic polarons in ferromagnetic GdN F. Natali,B.J. Ruch,H. J. Trodahl,Do Le Binh,S. Vézianet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87 (3), pp.035202. ⟨10.1103/PhysRevB.87.035202⟩ Article dans une revue hal-01002353v1
Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC Marc Portail,A. Michon,S. Vézian,D. Lefebvre,S. Chenotet al. Journal of Crystal Growth, 2012, 349 (1), pp.27-35. ⟨10.1016/j.jcrysgro.2012.04.004⟩ Article dans une revue istex hal-00803559v1
Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111) Adrien Michon,Elodie Roudon,Marc Portail,Denis Lefebvre,Stephane Vézianet al. Materials Science Forum, 2012, 711 (1), pp.253-257. ⟨10.4028/www.scientific.net/MSF.711.253⟩ Article dans une revue hal-05311109v1
Graphene growth using propane‐hydrogen CVD on 6H‐SiC(0001): temperature dependent interface and strain A. Michon,L. Largeau,O. Mauguin,A. Ouerghi,S. Vézianet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 9 (2), pp.175-178. ⟨10.1002/pssc.201100225⟩ Article dans une revue istex hal-05311112v1

Communication dans un congrès (6)

ADICT: Growth of MoS2 Using Molecular Beam Epitaxy Z Bouyid,M.-T. Dau,I Florea,P Vennéguès,J Braultet al. Journées scientifiques du PEPR électronique, Mar 2025, Paris, France Communication dans un congrès hal-04947519v1
Analyzing polarized metasurface holograms by vectorial ptychography Arthur Baroni,Qinghua Song,Rajath Sawant,Peinan Ni,Virginie Brandliet al. Focus on Microscopy 2021 (FOM2021), Mar 2021, online, Netherlands Communication dans un congrès hal-03183699v1
Vectorial Hologram Based on Pixelated Metasurface Qinghua Song,Arthur Baroni,Rajath Sawant,Peinan Ni,Virginie Brandliet al. CLEO: Applications and Technology 2020, OSA / IEEE, May 2020, Wahington, DC (virtual), United States. pp.ATh4I.6, ⟨10.1364/CLEO_AT.2020.ATh4I.6⟩ Communication dans un congrès hal-02962142v1
Analyzing full-polarized metasurface holograms by vectorial ptychography Arthur Baroni,Virginie Chamard,Qinghua Song,Rajath Sawant,Peinan Niet al. Focus On Microscopy 2020 (FOM 2020) (Canceled Covid-19), Apr 2020, Osaka, Japan Communication dans un congrès hal-02537380v1
X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD Adrien Michon,Ludovic Largeau,Antoine Tiberj,Jean Roch Huntzinger,Olivia Mauguinet al. Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Petersburg, Russia. pp.117 - 120, ⟨10.4028/www.scientific.net/MSF.740-742.117⟩ Communication dans un congrès hal-01617115v1
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001) A. Michon,E. Roudon,M. Portail,Benoit Jouault,S. Contreraset al. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩ Communication dans un congrès hal-03037521v1

Rapport (2)

Rapport de Prospectives du CSI-INP 2019-2023 Claudine Crépin,Erwan Paineau-Lanone,Noel Dimarcq,Laurence Ramos,Antoine Rondaet al. CoNRS. 2023 Rapport (rapport d’expertise collective) hal-04232515v3
Rapport de conjoncture 2019 : CID 51 Modélisation mathématique, informatique et physique pour les sciences du vivant Franck Picard,Myriam Ferro,Alice Cleynen,Marie Doumic,Xavier Ducheminet al. Comité national de la recherche scientifique. 2020 Rapport hal-04360199v1

Thèse (1)

Application de la microscopie à sonde locale à l'étude de la surface de GaN(0001) Stephane Vezian Science des matériaux [cond-mat.mtrl-sci]. Université de Nice-Sophia Antipolis, 2000. Français. ⟨NNT : ⟩ Thèse tel-02527734v1