- 12
ST
Sylvain Tricot
12
Documents
Identifiants chercheurs
- sylvain-tricot
- 0000-0002-8863-2162
- IdRef : 132073986
Présentation
Publications
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Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applicationsProceedings of SPIE, the International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
Article dans une revue
hal-00842763v1
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Electronic, optical and structural properties of (In,Ga)As/GaP quantum dotsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86, pp.205316. ⟨10.1103/PhysRevB.86.205316⟩
Article dans une revue
hal-00726726v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918669v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918734v1
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Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France
Communication dans un congrès
hal-00918787v1
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
hal-00726861v1
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Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France
Communication dans un congrès
hal-00788434v1
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(In,Ga)As/GaP quantum dots for monolithic integration on silicon31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland
Communication dans un congrès
hal-00726878v1
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Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening processinternational conference on MBE, 2012, Nara, Japan
Communication dans un congrès
hal-00726776v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Poster de conférence
hal-00918662v1
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