Sylvie Contreras

Identifiants chercheurs

IdHAL :

sylvie-contreras

ORCID :

0000-0002-4733-9998

IdRef :

194459241

Publications

Article dans une revue (41)

Molecularly imprinted polymer embedded by electropolymerization on chemical vapor deposition graphene for the electrochemical determination of isoproturon in water Yves Pain,David Taleb,Aida Bensebaa,Jimmy Nicolle,Christophe Coillotet al. Sensors and Actuators B: Chemical, 2026, 457, pp.139613. ⟨10.1016/j.snb.2026.139613⟩ Article dans une revue hal-05535470v1
Effect of the growth temperature on the crystal quality and optical properties in ZnS Hassan Amadou Arifa,Olivier Briot,Sandrine Juillaguet,Herve Peyre,Bernard Fraisseet al. Journal of Applied Physics, 2025, 138 (11), ⟨10.1063/5.0271678⟩ Article dans une revue hal-05295706v1
Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2 Vincent Astié,Felipe Wasem Klein,Houssin Makhlouf,Matthieu Paillet,Jean-Roch Huntzingeret al. Physical Chemistry Chemical Physics, 2024, 26 (40), pp.25772-25779. ⟨10.1039/D4CP00603H⟩ Article dans une revue hal-04734922v1
High-Order Commensurate Zwitterionic Quinonoid Phase Induces a Nanoscale Dipole Lattice on Graphene Gaelle Nassar,Diego Cortés-Arriagada,Luis Sanhueza-Vega,Périne Landois,Matthieu Pailletet al. Journal of Physical Chemistry C, 2024, 128 (23), pp.9712-9721. ⟨10.1021/acs.jpcc.4c01695⟩ Article dans une revue hal-04609427v1
Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility Julien Bassaler,Jash Mehta,Idriss Abid,Leszek Konczewicz,Sandrine Juillaguetet al. Advanced Electronic Materials, 2024, 11 (1), pp.2400069. ⟨10.1002/aelm.202400069⟩ Article dans une revue hal-04665123v1
Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size Felipe Wasem Klein,Jean-Roch Huntzinger,Vincent Astié,Damien Voiry,Romain Parretet al. Beilstein Journal of Nanotechnology, 2024, 15, pp.279-296. ⟨10.3762/bjnano.15.26⟩ Article dans une revue hal-04747945v1
Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process Leszek Konczewicz,Sandrine Juillaguet,Marcin Zajac,Elzbieta Litwin-Staszewska,Mohamed Al Khalfiouiet al. Physica Status Solidi A (applications and materials science), 2023, Nitride Semiconductors, 220 (16), pp.2200769. ⟨10.1002/pssa.202200769⟩ Article dans une revue hal-04248758v1
Metal-insulator crossover in monolayer MoS 2 Ivanovitch Castillo Arvelo,Thibault Sohier,Matthieu Paillet,Dilek Cakiroglu,Christophe Consejoet al. Nanotechnology, 2023, 34 (33), pp.335202. ⟨10.1088/1361-6528/acd3f7⟩ Article dans une revue (article de synthèse) hal-04144576v1
Atomic-Spring-like Effect in Glassy Silica-Helium Composites Daniel Bowron,David Keen,Mathieu Kint,Coralie Weigel,Benoît Ruffléet al. Journal of Physical Chemistry C, 2022, 126 (12), pp.5722-5727. ⟨10.1021/acs.jpcc.2c00026⟩ Article dans une revue hal-03821835v1
Synthesis of a polyphenylacetylene/silica nanotube composite under high-temperature, high-pressure conditions Marco Fabbiani,Jerome Rouquette,Gael Talbi,Martine Cambon,Olivier Cambonet al. Canadian Journal of Chemistry, 2022, 100 (3), pp.239-243. ⟨10.1139/cjc-2021-0175⟩ Article dans une revue hal-03628395v1
Electrical Transport Properties of Highly Doped N-Type GaN Materials L Konczewicz,E Litwin-Staszewska,M Zajac,H Turski,M Bockowskiet al. Semiconductor Science and Technology, 2022, 37 (5), pp.055012. ⟨10.1088/1361-6641/ac5e01⟩ Article dans une revue hal-03845953v1
Negative Magnetoresistivity in Highly Doped n-Type GaN Leszek Konczewicz,Malgorzata Iwinska,Elzbieta Litwin-Staszewska,Marcin Zajac,Henryk Turskiet al. Materials, 2022, 15 (20), pp.7069. ⟨10.3390/ma15207069⟩ Article dans une revue hal-03864839v1
High-pressure, high-temperature synthesis of nanostructured polydiphenylbutadiyne confined in the 1-dimensional pores of single crystal AlPO4-54 Marco Fabbiani,Sebastiano Romi,Frederico Alabarse,Anna Celeste,Francesco Capitaniet al. CrystEngComm, 2022, 24 (40), pp.7109-7117. ⟨10.1039/d2ce00938b⟩ Article dans une revue hal-04266804v1
Large inverted band gap in strained three-layer InAs/GaInSb quantum wells Colin Avogadri,Sébastian Gebert,Sergey Krishtopenko,Ivanovitch Castillo Arvelo,Christophe Consejoet al. Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩ Article dans une revue hal-03939599v2
p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method Maciej Zajac,Leszek Konczewicz,Elzbieta Litwin-Staszewska,M. Iwinska,R. Kucharskiet al. Journal of Applied Physics, 2021, 129 (13), pp.135702. ⟨10.1063/5.0038524⟩ Article dans une revue hal-03416929v1
High-Pressure Synthesis and Gas-Sensing Tests of 1-D Polymer/Aluminophosphate Nanocomposites Frederico Alabarse,Michelangelo Polisi,Marco Fabbiani,Simona Quartieri,Rossella Arlettiet al. ACS Applied Materials & Interfaces, 2021, 13 (23), pp.27237-27244. ⟨10.1021/acsami.1c00625⟩ Article dans une revue hal-03295873v1
Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling Tianlin Wang,Jean-Roch Huntzinger,Maxime Bayle,Christophe Roblin,Jean-Manuel Decamset al. Carbon, 2020, 163, pp.224-233. ⟨10.1016/j.carbon.2020.03.027⟩ Article dans une revue hal-03034438v1
High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials L. Konczewicz,S. Juillaguet,E. Litwin-Staszewska,R. Piotrzkowski,H. Peyreet al. Journal of Applied Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩ Article dans une revue hal-02931592v1
Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells Olivier Briot,Matthieu Moret,Camille Barbier,A. Tiberj,H. Peyreet al. Solar Energy Materials and Solar Cells, 2018, 174, pp.418 - 422. ⟨10.1016/j.solmat.2017.09.019⟩ Article dans une revue hal-01596720v1
Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure Perine Landois,Tianlin Wang,Abir Nachawaty,Maxime Bayle,J.M. Decamset al. Physical Chemistry Chemical Physics, 2017, 10.1039/c7cp01012e. ⟨10.1039/c7cp01012e⟩ Article dans une revue hal-01540335v1
High temperature electrical transport study of Si-doped AlN Sylvie Contreras,Leszek Konczewicz,Jaweb Ben Messaoud,Herve Peyre,Mohamed Al Khalfiouiet al. Superlattices and Microstructures, 2016, 98, pp.253-258. ⟨10.1016/j.spmi.2016.08.038⟩ Article dans une revue hal-01425146v1
Influence of AlN thickness on AlGaN epilayer grown by MOCVD M. Jayasakthi,Sandrine Juillaguet,Herve Peyre,Leszek Konczewicz,K. Baskaret al. Superlattices and Microstructures, 2016, 98, pp.515-521. ⟨10.1016/j.spmi.2016.08.053⟩ Article dans une revue hal-01407865v1
Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts Nicolas Thierry-Jebali,Mihai Lazar,A. Vo-Ha,D. Carole,V. Soulièreet al. Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩ Article dans une revue hal-01987147v1
Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination Wilfried Desrat,Sylvie Contreras,Leszek Konczewicz,Benoit Jouault,M. Chmielowskaet al. Journal of Applied Physics, 2013, 114 (2), pp.023704. ⟨10.1063/1.4813220⟩ Article dans une revue hal-01208523v1
Nitrogen Cycling Driven By Organic Matter Export In The South Pacific Oxygen Minimum Zone T. Kalvelage,G. Lavik,P. Lam,Sylvie Contreras,L. Arteagaet al. Nature Geoscience, 2013, 6 (3), pp.228-234. ⟨10.1038/ngeo1739⟩ Article dans une revue hal-00998635v1
Reversible optical doping of graphene Antoine Tiberj,Miguel Rubio-Roy,Matthieu Paillet,Jean-Roch Huntzinger,Perine Landoiset al. Scientific Reports, 2013, 3 (1), ⟨10.1038/srep02355⟩ Article dans une revue hal-00989884v1
Giant Hydrogen Sulfide Plume In The Oxygen Minimum Zone Off Peru Supports Chemolithoautotrophy H. Schunck,G. Lavik,D. K. Desai,T. Grosskopf,T. Kalvelageet al. PLoS ONE, 2013, 8 (8), pp.18. ⟨10.1371/journal.pone.0068661⟩ Article dans une revue hal-00998673v1
Catalytic reduction of nitrates in water on Pt promoted Cu hydrotalcite-derived catalysts: Effect of the Pt-Cu alloy formation A. Aristizábal,Sylvie Contreras,Noelia Barrabés,J. Llorca,Didier Tichitet al. Applied Catalysis B: Environmental, 2011, 110, pp.58-70. ⟨10.1016/j.apcatb.2011.08.024⟩ Article dans une revue istex hal-00687534v1
Catalytic activity and characterization of Pt/calcined CuZnAl hydrotalcites in nitrate reduction reaction in water A. Aristizábal,M. Kolafa,Sylvie Contreras,M. Domínguez,J. Llorcaet al. Catalysis Today, 2011, 175, pp.370-379. ⟨10.1016/j.cattod.2011.02.044⟩ Article dans une revue istex hal-00644887v1
Pt/CuZnAl mixed oxides for the catalytic reduction of nitrates in water: Study of the incidence of the Cu/Zn atomic ratio A. Aristizabal,N. Barrabes,Sylvie Contreras,M. Kolafa,Didier Tichitet al. Physics Procedia, 2010, 8, pp.44-48. ⟨10.1016/j.phpro.2010.10.010⟩ Article dans une revue hal-00545211v1
Ballistic effects up to room temperature in microscopic Hall sensors Benoit Jouault,Wilfried Desrat,Olivier Couturaud,Sylvie Contreras,Dominique Maillyet al. Journal of Applied Physics, 2009, 105 (7), pp.074504. ⟨10.1063/1.3103303⟩ Article dans une revue hal-00394184v1
Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization C. Cervera,J. B. Rodriguez,J. P. Perez,H. Ait-Kaci,R. Chaghiet al. Journal of Applied Physics, 2009, 106, pp.033709. ⟨10.1063/1.3191175⟩ Article dans une revue hal-00536295v1
Effect of pressure on electrical properties of short period InAs/GaSb superlattice Leszek Konczewicz,Sylvie Contreras,Hocine Aït-Kaci,Yvan Cuminal,Jean-Baptiste Rodriguezet al. physica status solidi (b), 2009, 246 (3), pp.643 - 647. ⟨10.1002/pssb.200880520⟩ Article dans une revue istex hal-01756707v1
High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors L. Bouguen,L. Konczewicz,S. Contreras,Benoit Jouault,J. Camasselet al. Materials Science and Engineering: B, 2009, 165 (1-2), pp.1-4. ⟨10.1016/j.mseb.2008.11.041⟩ Article dans une revue istex hal-03037527v1
Finite element modeling for temperature stabilization of gated Hall sensors Benoit Jouault,L. Bouguen,Sylvie Contreras,A. Kerlain,Vincent Mosser Journal of Applied Physics, 2008, 104 (5), pp.053705. ⟨10.1063/1.2968436⟩ Article dans une revue hal-00388502v1
Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C Laure Bouguen,Sylvie Contreras,Benoit Jouault,Leszek Konczewicz,Jean Camasselet al. Applied Physics Letters, 2008, 92, pp.043504. ⟨10.1063/1.2838301⟩ Article dans une revue hal-00535633v1
Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC Antonio Ferreira da Silva,Julien Pernot,Sylvie Contreras,Bo E. Sernelius,Clas Perssonet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74, pp.245201. ⟨10.1103/PhysRevB.74.245201⟩ Article dans une revue hal-00536294v1
Electrical transport properties of aluminum-implanted 4H-SiC Julien Pernot,Sylvie Contreras,Jean Camassel Journal of Applied Physics, 2005, 98 (2), pp.23706. ⟨10.1063/1.1978987⟩ Article dans une revue hal-00389873v1
Technical aspects of &lt; 1120 &gt; 4H-SiC MOSFET processing Caroline Blanc,D. Tournier,V. Souliere,Sandrine Juillaguet,Sylvie Contreraset al. Physica Status Solidi A (applications and materials science), 2005, 202, pp.680-685. ⟨10.1002/pssa.200460473⟩ Article dans une revue istex hal-00541644v1
High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures C Consejo,L Konczewicz,S Contreras,Benoit Jouault,S Lepkowskyet al. physica status solidi (b), 2003, 235 (2), pp.232-237. ⟨10.1002/pssb.200301562⟩ Article dans une revue istex hal-03037546v1
Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures Leszek Konczewicz,Benoit Jouault,Sylvie Contreras,Ml Sadowski,Jean-Louis Robertet al. physica status solidi (b), 2001, 223, pp.507-512 Article dans une revue hal-00544463v1

Communication dans un congrès (60)

AlGaN channel high electron mobility transistors on Si for power electronics Julien Bassaler,Jash Mehta,Idriss Abid,Leszek Konczewicz,Sandrine Juillaguetet al. Symposium de Génie Électrique SGE 2025, CNRS, Jul 2025, Toulouse, France Communication dans un congrès hal-05398228v1
Electropolymérisation du polypyrrole sur graphène CVD et graphène épitaxié pour le développement de capteurs environnementaux Christine Vautrin-Ul,Oumayma Lourhzal,Yves Pain,Abed-Albaset Taleb,Céline Grillotet al. SFEC 2023, Société Francophone d’Etude des Carbones; Université des Antilles; COVACHIM-M2E; Groupe de Technologie des Surfaces et Interfaces, May 2023, Gosier (Guadeloupe), France Communication dans un congrès hal-05514643v1
Etude de l’électropolymérisation sur graphène épitaxié sur carbure de silicium Yves Pain,Christophe Coillot,Périne Landois,Jimmy Nicolle,M.-R. Ammaret al. MatV2L, Fédération MatV2L, Jul 2023, Orléans, France Communication dans un congrès hal-05514701v1
Studying of the electropolymerisation on CVD graphene and epitaxial graphene on silicon carbide Yves Pain,Christophe Coillot,Perine Landois,Jimmy Nicolle,Mohamed Ramzi Ammaret al. Carbon 2023, Jul 2023, Cancun, Quintana Roo, Mexico Communication dans un congrès hal-04716226v1
Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates Haitham Hrich,Matthieu Moret,Olivier Briot,Matthieu Paillet,Jean Manuel Decamset al. ECSCRM 2021, Oct 2021, Tours (FR), France. pp.59-63, ⟨10.4028/p-1ak21z⟩ Communication dans un congrès hal-03845325v1
Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximité V. Astié,Nicolas Brun,Christophe Coillot,Sylvie Contreras,J.M. Decamset al. ID en action !, Mission pour les initiatives transverses et interdisciplinaires du CNRS (MITI), Nov 2022, Paris, France Communication dans un congrès hal-04209570v1
Démonstration d’une électrode de graphène en vue d’une détection électrochimique de polluants en milieu aqueux Yves Pain,Christophe Coillot,Christophe Roblin,Périne Landois,Jimmy Nicolleet al. Société Francophone d’Etude des Carbones (SFEC), Apr 2022, Nouan-le-Fuzelier, France Communication dans un congrès hal-04786003v1
Epitaxial graphene growth and characterisation of buffer layer on SiC(0001) Tianlin Wang,Jean-Roch Huntzinger,Jean-Manuel Decams,Maxime Bayle,Ahmed Azmi Zahabet al. 2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France Communication dans un congrès hal-03040807v1
Sublimation de carbure de silicium : de la couche tampon à la monocouche de graphène Perine Landois,Jean-Roch Huntzinger,Tianlin Wang,Maxime Bayle,Benoit Jouaultet al. Congrès annuel SFEC, Apr 2020, Samatan, France Communication dans un congrès hal-03040832v1
Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001) Tianlin Wang,Perine Landois,Jean-Roch Huntzinger,Ahmed Azmi Zahab,Alessandro de Ceccoet al. GDR-I Graphene and co Annual meeting 2018, Oct 2018, Sète, France Communication dans un congrès hal-01923963v1
Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates Sylvie Contreras,Leszek Konczewicz,Roxana Arvinte,Herve Peyre,Thierry Chassagneet al. 11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275 Communication dans un congrès hal-01935564v1
Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressure Tianlin Wang,Perine Landois,Maxime Bayle,Jean-Roch Huntzinger,Alessandro de Ceccoet al. GDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France Communication dans un congrès hal-01924058v1
Electrical transport properties of p-type 4H-SiC Sylvie Contreras,Leszek Konczewicz,Roxana Arvinte,Herve Peyre,Thierry Chassagneet al. E-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩ Communication dans un congrès hal-01540938v1
Optical investigations and strain effect in AlGaN/GaN epitaxial layers M. Jayasakthi,Sandrine Juillaguet,Herve Peyre,Leszek Konczewicz,Matthieu Moretet al. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩ Communication dans un congrès hal-01935164v1
Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers Marcin Zielinski,Thierry Chassagne,Roxana Arvinte,Adrien Michon,Marc Portailet al. 11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79 Communication dans un congrès hal-01935556v1
High Temperature Annealing of MBE-grown Mg-doped GaN Sylvie Contreras,Leszek Konczewicz,Herve Peyre,Sandrine Juillaguet,M. Al Khalfiouiet al. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩ Communication dans un congrès hal-01935176v1
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC Sylvie Contreras,Leszek Konczewicz,Pawel Kwasnicki,Roxana Arvinte,Herve Peyreet al. 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩ Communication dans un congrès hal-01936580v1
p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum Marc Zielinski,Roxana Arvinte,Thierry Chassagne,Adrien Michon,Marc Portailet al. ICSCRM, Oct 2015, Giardini Naxos, France. pp.137 - 142, ⟨10.4028/www.scientific.net/MSF.858.137⟩ Communication dans un congrès hal-01936467v1
Non-trivial Berry phase in the Cd3As2 3D Dirac semimetal Wilfried Desrat,Christophe Consejo,Frederic Teppe,Sylvie Contreras,M. Marcinkiewiczet al. EDISON 19, Jun 2015, Salamanca, Spain. ⟨10.1088/1742-6596/647/1/012064⟩ Communication dans un congrès hal-01932656v1
Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction M. Delmas,J. B. Rodriguez,R. Taalat,Leszek Konczewicz,Wilfried Desratet al. 8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP), Jun 2014, Santa-Fe, United States. pp.76-80, ⟨10.1016/j.infrared.2014.09.036⟩ Communication dans un congrès hal-01216731v1
Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization Matthieu Florentin,Joan Marc Rafi,Florian Chevalier,Victor Soler,Leszek Konczewiczet al. 10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.717 - 720, ⟨10.4028/www.scientific.net/MSF.821-823.717⟩ Communication dans un congrès hal-01936637v1
Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport Nicolas Thierry-Jebali,Arthur Vo-Ha,Davy Carole,Mihai Lazar,Gabriel Ferroet al. HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩ Communication dans un congrès hal-01391861v1
Genomic and EST microsatellite loci development and use in olive: molecular tools for genetic mapping and association studies Laila Essalouh,A. Z. El-Aabidine,Sylvie Contreras,I. B. Sadok,Sylvain Santoniet al. 7. International Symposium on Olive Growing, International Society for Horticultural Science (ISHS). Leuven, INT., Sep 2012, San Julian, Argentina. 736 p Communication dans un congrès hal-01269135v1
Raman spectroscopy as a tool to study the doping of graphene Antoine Tiberj,Miguel Rubio-Roy,Romain Parret,Matthieu Paillet,Jean-Roch Huntzingeret al. Nanospain Conference 2014, Mar 2014, Spain Communication dans un congrès hal-00989874v1
Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD Pawel Kwasnicki,Roxana Arvinte,Herve Peyre,Marcin Zielinski,Leszek Konczewiczet al. HETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩ Communication dans un congrès hal-01936666v1
La spectrométrie Raman comme outil pour l'étude du dopage du graphène Matthieu Paillet,Romain Parret,Miguel Rubio-Roy,Antoine Tiberj,Jean-Roch Huntzingeret al. Matériaux 2014, Nov 2014, Montpellier, France Communication dans un congrès hal-01974125v1
Reversible Optical Doping of graphene Antoine Tiberj,Miguel Rubio-Roy,Matthieu Paillet,Jean-Roch Huntzinger,Périne Landoiset al. ImagineNano/Nanospain 2013, Apr 2013, Bilbao, Spain Communication dans un congrès hal-00954962v1
Raman investigation of aluminum-doped 4H-SiC Sandrine Juillaguet,Pawel Kwasnicki,Herve Peyre,Leszek Konczewicz,Sylvie Contreraset al. ECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩ Communication dans un congrès hal-00803766v1
Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer H. Dmowski,Leszek Konczewicz,T. Suski,Sylvie Contreras,H. Luet al. HPSP 2012, Jul 2012, Montpellier, France. pp.746 - 749, ⟨10.1002/pssb.201200508⟩ Communication dans un congrès istex hal-01936833v1
Changes induced by doping on the Raman spectrum of monolayer and bilayer graphene Jean-Louis Sauvajol,Matthieu Paillet,Antoine Tiberj,Jean-Roch Huntzinger,Romain Parretet al. Advances and Applications in Carbon Related nanomaterials: From pure to doping including heteroatom, Sep 2013, Castelldefels, Spain Communication dans un congrès hal-00867474v1
P3 : un outil pour la formation à la gestion et au pilotage d'ateliers de production Patrick Pujo,F Ounnar,B Borriello,Sylvie Contreras,M C Gonzalez VII° colloque 'Questions de Pédagogies dans l'Enseignement Supérieur' (QPES'13), 2013, Sherbrooke, Unknown Region Communication dans un congrès hal-01216885v1
Reversible Optical Doping of graphene Antoine Tiberj,Miguel Rubio-Roy,Matthieu Paillet,Jean-Roch Huntzinger,Périne Landoiset al. GDR-I GNT 2013, Apr 2013, Guidel-Plages, Lorient, France Communication dans un congrès hal-00813854v1
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001) A. Michon,E. Roudon,M. Portail,Benoit Jouault,S. Contreraset al. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩ Communication dans un congrès hal-03037521v1
Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications Hervé Peyre,Jianwu Sun,Jude Guelfucci,Sandrine Juillaguet,J. Hassanet al. HeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩ Communication dans un congrès hal-00655897v1
Mobility spectrum analysis on AlGaN/AlN/GaN heterostructures grown on Fe-doped GaN templates Sylvie Contreras,Wilfried Desrat,Leszek Konczewicz EXMATEC 2012, May 2012, Ile de Porquerolles, France Communication dans un congrès hal-00806216v1
Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode Cyril Cervera,Rachid Taalat,Philippe Christol,Jean-Baptiste Rodriguez,K. Jaworowiczet al. Conference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, United States. pp.801213, ⟨10.1117/12.882133⟩ Communication dans un congrès hal-00641337v1
Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation. Philippe Christol,C. Cervera,R. Chaghi,H. Ait-Kaci,J. B. Rodriguezet al. Conference On Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco (CA), France. pp.76081U Communication dans un congrès hal-00543643v1
Propriétés électriques de photodiodes infrarouges à superréseaux InAs/GaSb C. Cervera,J.-B. Rodriguez,Philippe Christol,L. Konczewicz,Sylvie Contreraset al. XIIIème Journées Nationales Microélectronique Optoélectronique (JNMO), 2010, Les Issambres, France Communication dans un congrès hal-01831153v1
Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiode L. Konczewicz,Sylvie Contreras,M. Baj,C. Cervera,J.-P. Perezet al. Exmatec Conference, 2010, Darmstadt, Germany Communication dans un congrès hal-01831030v1
High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors Laure Bouguen,Leszek Konczewicz,Sylvie Contreras,Benoit Jouault,Jean Camasselet al. 9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4 Communication dans un congrès hal-00536293v1
Effect of pressure on electrical properties of short period InAs/GaSb superlattice Leszek Konczewicz,Sylvie Contreras,H. Aït-Kaci,Y. Cuminal,Jean-Baptiste Rodriguezet al. 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647 Communication dans un congrès hal-00401354v1
Electrical transport phenomena in magnesium-doped p-type GaN Leszek Konczewicz,Elzbieta Litwin-Staszewska,Sylvie Contreras,Ryszard Piotrzkowski,Leslaw Dmowski 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.658-663 Communication dans un congrès hal-00401355v1
Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode C. Cervera,Jean-Philippe Perez,Radouane Chaghi,Jean-Baptiste Rodriguez,Philippe Christolet al. 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16), Aug 2009, Montpellier (FRANCE), France. pp.012030 Communication dans un congrès hal-00536291v1
Zero-thermal drift quantum Well Hall Sensor Vincent Mosser,A. Kerlain,Youcef Haddab,L. Bouguen,Benoit Jouaultet al. Proceeding Eurosensors XXII, Sep 2008, Dresden, Germany Communication dans un congrès hal-00394192v1
Pressure characterization of AlGaN/GaN Hall sensors Leszek Konczewicz,Sylvie Contreras,L. Bouguen,Benoit Jouault,Jean Camasselet al. 13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil Communication dans un congrès hal-00401344v1
Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence L. Bouguen,Sylvie Contreras,Benoit Jouault,L. Konczewicz,Y. Cordieret al. Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France Communication dans un congrès hal-00394196v1
Top injection and side injection to a buried 2DEG : beyond the Murrmann-Berger model Vincent Mosser,A. Kerlain,Olivier Couturaud,Christophe Chaubet,Benoit Jouaultet al. Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France Communication dans un congrès hal-00394194v1
Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method Sylvie Contreras,M. Zielinski,Leszek Konczewicz,Caroline Blanc,Sandrine Juillaguetet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636 Communication dans un congrès hal-00536296v1
Impact of annealing temperature ramps on the electrical activation of N+ and P+ co-implanted SiC layers S. Blanque,R. Perez,N. Mestres,Sylvie Contreras,Jean Camasselet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.795-798 Communication dans un congrès hal-00536300v1
High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications Christophe Consejo,Sylvie Contreras,Leszek Konczewicz,P. Lorenzini,Y. Cordieret al. 7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443 Communication dans un congrès hal-00543735v1
Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates Caroline Blanc,M. Zielinski,V. Souliere,C. Sartel,Sandrine Juillaguetet al. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120 Communication dans un congrès hal-00541640v1
Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC J. Pernot,Sylvie Contreras,Jean Camassel,Jean-Louis Robert 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.401-404 Communication dans un congrès hal-00543771v1
Innovative pressure and Hall sensors based on semiconductor compounds Sylvie Contreras,Vincent Mosser,Leszek Konczewicz,Jean Camassel,Jean-Louis Robert ESTEC, 4th Round Table on Micro/Nano Technologies for Space, May 2003, Noordwijk, Netherlands Communication dans un congrès hal-00402969v1
From Transport Measurements to Infrared Reflectance Spectra of n-type Doped 4H-SiC Layer Stacks Julien Pernot,Jean Camassel,Hervé Peyre,Sylvie Contreras,Jean-Louis Robert European Conference on Silicon Carbide and Related Materials (ECSCRM2002), Sep 2002, Linköping, Sweden. pp.403-406 Communication dans un congrès hal-00389889v1
High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures Christophe Consejo,Leszek Konczewicz,Sylvie Contreras,Benoit Jouault,S. Lepkowskyet al. 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), Aug 2002, GUILDFORD (ENGLAND), France. pp.232-237 Communication dans un congrès hal-00544457v1
Process-induced strain in silicon-on-insulator materials Antoine Tiberj,B. Fraisse,Caroline Blanc,Sylvie Contreras,Jean Camassel Conference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416 Communication dans un congrès hal-00543870v1
Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Thierry Chassagne,Gabriel Ferro,H. Y. Wang,Yanis Stoemenos,Hervé Peyreet al. International Conference on Silicon and Carbide and Related Materials 2001 (9th) (ICSCRM2001), Oct 2001, Tsukuba, Japan. pp.343-346 Communication dans un congrès hal-00389892v1
4H-SiC material for Hall effect and high-temperature sensors working in harsh environments Jean-Louis Robert,Sylvie Contreras,Jean Camassel,J. Pernot,Sandrine Juillaguetet al. International Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438 Communication dans un congrès hal-00543769v1
A novel selectively delta-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructure L. Bouzaiene,L. Sfaxi,H. Sghaeir,H. Maaref,A. Cavannaet al. Spring Conference of the E-MRS/IUMRS/ICEM, May 2000, Strasbourg, France. pp.299-303, ⟨10.1016/S0925-3467(01)00095-7⟩ Communication dans un congrès istex hal-00544461v1
Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC P. Thomas,Sylvie Contreras,Sandrine Juillaguet,Jean-Louis Robert,Jean Camasselet al. 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.725-728 Communication dans un congrès hal-00543782v1

Poster de conférence (14)

Micro capteur à base de graphène pour la détection électrochimique de micropolluants Aïda Bensebaa,Yves Pain,Abed Albaset Taleb,Vincent Astié,Jean-Manuel Decamset al. Les Journées Nano, Micro et Optoélectronique (JNMO), 2024, Oct 2024, Sète (FR), France Poster de conférence hal-04738395v1
Towards an understanding of vanadium doping effects in 4H-SiC Harmke van Dijk,Matthieu Paillet,Océane Février,Sandrine Juillaguet,S. Contreraset al. Les Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France Poster de conférence hal-04829444v1
Simulateur de voltampérométrie cyclique sous Python dédié à un micro-capteur à base de graphène Aïda Bensebaa,Yves Pain,Périne Landois,Sylvie Contreras,Christine Vautrin-Ulet al. Les Journées Electrochimiques 2024, Jul 2024, Saint - Malo, France Poster de conférence hal-04701580v1
Genèse, contenu et perspectives d'un module expérimental d'éducation à la transition écologique à la Faculté des Sciences de l'université de Montpellier. Olivier Arnould,Sandrine Bardet,Jean-Louis Bantignies,Adeline Barnaud,Ilham Bentalebet al. Colloque ETES 2023 : Enseigner les transitions écologiques et sociales dans le supérieur, Jul 2023, Paris, France. 2023 Poster de conférence hal-04204671v1
Design and properties of composites made of bismuth nanowires confined in mesoporous silica and alumina for Peltier applications Romain Viennois,Marco Fabbiani,Yixuan Zhao,Julien Haines,Olivier Cambonet al. 19th European Conference on Thermoelectrics, Sep 2023, Prague, Czech Republic Poster de conférence hal-04589106v1
Development of a graphene microsensor network for the electrochemical detection of micropollutants in water Yves Pain,Christophe Coillot,Christophe Roblin,Périne Landois,Jimmy Nicolleet al. Journées d'Electrochimie 2022, Jul 2022, Mons, Belgium Poster de conférence hal-04785868v1
Giant step bunching occurrence during graphene growth on 4H SiC(0001) Haitham Hrich,Matthieu Paillet,Tianlin Wang,Jean-Manuel Decams,Sylvie Contreraset al. Graphene 2020 on line, Oct 2020, On line, France Poster de conférence hal-03039790v1
Graphene: From Material to applications Périne Landois,Sébastien Nanot,Benoit Jouault,Dilek Cakiroglu,Sylvie Contreraset al. Graphene And Co Annual Meeting 2019, Oct 2019, Bad Herrenalb, Germany. Poster de conférence hal-03144975v1
Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN Sylvie Contreras,Leszek Konczewicz,Sandrine Juillaguet,Herve Peyre,Mohamed Al Khalfiouiet al. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan Poster de conférence hal-01937531v1
Growth of epitaxial graphene on SiC (0001) at low argon pressure and its characterization Tianlin Wang,Perine Landois,Maxime Bayle,Jean-Roch Huntzinger,Alessandro de Ceccoet al. ICPS, Jul 2018, Montpellier, France Poster de conférence hal-01924077v1
Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x&lt;0.4) grown by molecular epitaxy Julien Brault,Mathieu Leroux,Samuel Matta,Mohamed Al Khalfioui,Benjamin Damilanoet al. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan Poster de conférence hal-01937537v1
Quantum Dot based UV Light Emitting Diodes Julien Brault,Samuel Matta,Mohamed Al Khalfioui,Mathieu Leroux,Benjamin Damilanoet al. 12th international conference on nitride semiconductors, Jul 2017, STRASBOURG, France Poster de conférence hal-01937757v1
Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure Tianlin Wang,Perine Landois,Maxime Bayle,Abir Nachawaty,Wilfried Desratet al. GDR, Oct 2016, Oleron, France Poster de conférence hal-01455032v1
Studying the number of graphene layers on copper substrate Perine Landois,Maxime Bayle,J.M. Decams,Axel Dieraert,Jean-Roch Huntzingeret al. GDR-GNT, Nov 2015, Aussois, France Poster de conférence hal-01340108v1