Thierry Bretagnon

Publications

Article dans une revue (40)

Time-resolved photoluminescence investigation of (Mg, Zn) O alloy growth on a non-polar plane Mohammed Jassim Mohammed Ali,Jean-Michel Chauveau,Thierry Bretagnon Superlattices and Microstructures, 2018, 116, pp.105-113. ⟨10.1016/j.spmi.2018.02.001⟩ Article dans une revue hal-01827268v1
Evidence of exciton complexes in non polar ZnO (Zn, Mg) O A-plane quantum well. Mohammed Jassim Mohammed Ali,Jean-Michel Chauveau,Thierry Bretagnon Superlattices and Microstructures, 2018, Superlattices and Microstructures, 120, pp.410-418. ⟨10.1016/j.spmi.2018.05.067⟩ Article dans une revue hal-01904849v1
Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells Fedor Fedichkin,Thierry Guillet,Pierre Valvin,Benoit Jouault,Christelle Brimontet al. Physical Review Applied, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩ Article dans une revue hal-01353893v2
Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy Daniel Rosales,Bernard Gil,Thierry Bretagnon,Julien Brault,Philippe Vennegueset al. Journal of Applied Physics, 2015, 118 (2), pp.024303. ⟨10.1063/1.4923306⟩ Article dans une revue hal-01238733v1
Transport of indirect excitons in ZnO quantum wells. Yuliya Kuznetsova,Fedor Fedichkin,Peristera Andreakou,Eric V. Calman,L. V. Butovet al. Optics Letters, 2015, 40 (15), pp.3667-3670. ⟨10.1364/OL.40.003667⟩ Article dans une revue hal-01181619v1
Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells. Fedor Fedichkin,Peristera Andreakou,Benoit Jouault,Maria Vladimirova,Thierry Guilletet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (20), pp.205424. ⟨10.1103/PhysRevB.91.205424⟩ Article dans une revue hal-01154792v1
The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures Daniel Rosales,Thi Huong Ngo,Pierre Valvin,K Lekhal,B. Damilanoet al. Superlattices and Microstructures, 2014, 76, pp.9. ⟨10.1016/j.spmi.2014.09.017⟩ Article dans une revue istex hal-01101061v1
Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells Daniel Rosales,Bernard Gil,Thierry Bretagnon,Brahim Guizal,N Izyumskayaet al. Journal of Applied Physics, 2014, 116, pp.093517. ⟨10.1063/1.4894513⟩ Article dans une revue hal-01061676v1
Optical properties of ZnO/(Zn, Mg)O quantum wells Thierry Bretagnon Turkish Journal of Physics, 2014, Turkish Journal of Physics, 38, pp.420-428. ⟨10.3906/z-1407-17⟩ Article dans une revue hal-01904861v1
Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells Daniel Rosales,Bernard Gil,Thierry Bretagnon,Brahim Guizal,F. Zhanget al. Journal of Applied Physics, 2014, 115, pp.073510. ⟨10.1063/1.4865959⟩ Article dans une revue hal-01905144v1
Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters Julien Brault,Daniel Rosales,B. Damilano,Mathieu Leroux,A Courvilleet al. Semiconductor Science and Technology, 2014, 29, pp.084001. ⟨10.1088/0268-1242/29/8/084001⟩ Article dans une revue hal-01025116v1
Excitons in nitride heterostructures: From zero- to one-dimensional behavior Daniel Rosales,Thierry Bretagnon,Bernard Gil,A Kahouli,Julien Braultet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, Physical Review B, 88, pp.125437. ⟨10.1103/PhysRevB.88.125437⟩ Article dans une revue hal-01905195v1
Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates. Thierry Bretagnon,Luc Beaur,Thierry Guillet,Christelle Brimont,Mathieu Gallartet al. Journal of Luminescence, 2013, 136, pp.355. ⟨10.1016/j.jlumin.2012.11.010⟩ Article dans une revue istex hal-00806330v1
High quality factor photonic resonators for nitride quantum dots Thierry Guillet,Meletis Mexis,Sylvain Sergent,Delphine Néel,Stéphanie Rennessonet al. physica status solidi (b), 2012, Physica Status Solidi B, 249 (3), pp.449-454. ⟨10.1002/pssb.201100226⟩ Article dans une revue istex hal-01905246v1
High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots Meletios Mexis,Sylvain Sergent,Thierry Guillet,Christelle Brimont,Thierry Bretagnonet al. Optics Letters, 2011, 36 (12), pp.2203. ⟨10.1364/OL.36.002203⟩ Article dans une revue hal-00554481v2
Polariton lasing in a hybrid bulk ZnO microcavity Thierry Guillet,Meletios Mexis,J. Levrat,G. Rossbach,Christelle Brimontet al. Applied Physics Letters, 2011, 99, pp.161104. ⟨10.1063/1.3650268⟩ Article dans une revue hal-00633265v1
AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate Delphine Néel,Sylvain Sergent,Meletios Mexis,Diane Sam-Giao,Thierry Guilletet al. Applied Physics Letters, 2011, 98 (26), pp.261106. ⟨10.1063/1.3605592⟩ Article dans une revue hal-00632917v1
Laser emission with excitonic gain in a ZnO planar microcavity Thierry Guillet,Christelle Brimont,Pierre Valvin,Bernard Gil,Thierry Bretagnonet al. Applied Physics Letters, 2011, 98 (211105), pp.3. ⟨10.1063/1.3593032⟩ Article dans une revue hal-00554480v3
Low temperature reflectivity study of ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates Luc Beaur,Thierry Bretagnon,Christelle Brimont,Thierry Guillet,Bernard Gilet al. Applied Physics Letters, 2011, 98, pp.101913. ⟨10.1063/1.3565969⟩ Article dans une revue hal-00553820v2
Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells Luc Beaur,Thierry Bretagnon,Bernard Gil,Alexey Kavokin,Thierry Guilletet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.165312. ⟨10.1103/PhysRevB.84.165312⟩ Article dans une revue hal-00633192v1
Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature Stéphane Faure,Christelle Brimont,Thierry Guillet,T. Bretagnon,B. Gilet al. Applied Physics Letters, 2009, 95 (12), pp.121102. ⟨10.1063/1.3232228⟩ Article dans une revue hal-00388499v2
Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory Richard Bardoux,Thierry Guillet,B. Gil,P. Lefebvre,T. Bretagnonet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.235315. ⟨10.1103/PhysRevB.77.235315⟩ Article dans une revue hal-00261181v3
Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities Stéphane Faure,T. Guillet,P. Lefebvre,T. Bretagnon,B. Gil Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.235323. ⟨10.1103/PhysRevB.78.235323⟩ Article dans une revue hal-00327759v1
Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells. Thierry Bretagnon,Pierre Lefebvre,Thierry Guillet,Thierry Taliercio,Bernard Gilet al. Applied Physics Letters, 2007, 90 (20), pp.201912. ⟨10.1063/1.2740576⟩ Article dans une revue hal-01304724v1
Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers Robert Seguin,Thierry Guillet,T. Taliercio,P. Lefebvre,T. Bretagnonet al. European Physical Journal: Applied Physics, 2007, 37, pp.15. ⟨10.1051/epjap:2007006⟩ Article dans une revue istex hal-00389970v1
Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots. Maxime Hugues,Mirja Richter,Jean-Michel Chauveau,Benjamin Damilano,Jean-Yves Dubozet al. Japanese Journal of Applied Physics, 2007, 46 (4L), pp.L317. ⟨10.1143/JJAP.46.L317⟩ Article dans une revue hal-01304760v1
Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots. Thierry Bretagnon,Pierre Lefebvre,Pierre Valvin,Richard Bardoux,Thierry Guilletet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73 (11), pp.113304. ⟨10.1103/PhysRevB.73.113304⟩ Article dans une revue hal-01304534v1
Spin-exchange interaction in ZnO-based quantum wells. Bernard Gil,Pierre Lefebvre,Thierry Bretagnon,Thierry Guillet,J.A. Sanset al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (15), pp.153302. ⟨10.1103/PhysRevB.74.153302⟩ Article dans une revue hal-01304535v1
Photoluminescence of single GaN∕AlN hexagonal quantum dots on Si(111): Spectral diffusion effects. Richard Bardoux,Thierry Guillet,Pierre Lefebvre,Thierry Taliercio,Thierry Bretagnonet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (19), pp.195319. ⟨10.1103/PhysRevB.74.195319⟩ Article dans une revue hal-01304536v1
Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template. Soufien Haffouz,Hao Tang,J.A. Bardwell,Pierre Lefebvre,Thierry Bretagnonet al. Journal of Applied Physics, 2006, 100 (1), pp.013528. ⟨10.1063/1.2214211⟩ Article dans une revue hal-01304537v1
Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells. Christian Morhain,Thierry Bretagnon,Pierre Lefebvre,X Tang,Pierre Valvinet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72 (24), pp.241305. ⟨10.1103/PhysRevB.72.241305⟩ Article dans une revue hal-01304048v1
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation. Pierre Lefebvre,Sokratis Kalliakos,Thierry Bretagnon,Pierre Valvin,Thierry Taliercioet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (3), pp.035307. ⟨10.1103/PhysRevB.69.035307⟩ Article dans une revue hal-01303935v1
Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes. Sokratis Kalliakos,Thierry Bretagnon,Pierre Lefebvre,Thierry Taliercio,Bernard Gilet al. Journal of Applied Physics, 2004, 96 (1), pp.180. ⟨10.1063/1.1753085⟩ Article dans une revue hal-01303942v1
From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction T. Taliercio,R. Intartaglia,B. Gil,P. Lefèbvre,T. Bretagnonet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩ Article dans une revue hal-00330627v1
Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems. Aurélien Morel,Pierre Lefebvre,Sokratis Kalliakos,Thierry Taliercio,Thierry Bretagnonet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (4), pp.045331. ⟨10.1103/PhysRevB.68.045331⟩ Article dans une revue hal-01303919v1
Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation. Thierry Bretagnon,Sokratis Kalliakos,Pierre Lefebvre,Pierre Valvin,Bernard Gilet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩ Article dans une revue hal-01303926v1
A positron annihilation investigation of porous silicon S. Dannefaer,D. Kerr,D. Craigen,T. Bretagnon,T. Taliercioet al. Journal of Applied Physics, 1996, 79 (12), pp.9110 - 9117. ⟨10.1063/1.362646⟩ Article dans une revue hal-01788509v1
Positron lifetime spectroscopy of n-type and p-type porous silicon S. Dannefaer,T. Bretagnon,A. Foucaran,T. Taliercio,D. Kerr Thin Solid Films, 1995, 255 (1-2), pp.171 - 173. ⟨10.1016/0040-6090(94)05647-V⟩ Article dans une revue istex hal-01788484v1
Porous silicon membranes for gas-sensor applications T. Taliercio,M. Dilhan,E. Massone,A. Foucaran,Anne Marie Guéet al. Sensors and Actuators A: Physical , 1995, 46 (1-3), pp.43 - 46. ⟨10.1016/0924-4247(94)00858-F⟩ Article dans une revue istex hal-01788492v1
Heat treatment effect on p type Zn doped InP substrates A. Dhouib,Blaise Maloumbi,C. Martinez,Léone Gouskov,D. Bayaaet al. Revue de Physique Appliquée, 1987, 22 (10), pp.1159-1168. ⟨10.1051/rphysap:0198700220100115900⟩ Article dans une revue jpa-00245664v1

Communication dans un congrès (60)

Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells. François Chiaruttini,Thierry Guillet,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France Communication dans un congrès hal-01907806v1
Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells. Thierry Guillet,François Chiaruttini,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico Communication dans un congrès hal-01908823v1
Phase transition of indirect excitons in GaN quantum wells. Thierry Guillet,François Chiaruttini,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan Communication dans un congrès hal-01910225v1
Indirect Excitons in Group III-Nitride-Based Quantum Wells. Pierre Lefebvre,Benoit Jouault,Thierry Guillet,Christelle Brimont,Pierre Valvinet al. CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy Communication dans un congrès hal-01908795v1
Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells. Masha Vladimirova,Thierry Guillet,Benoit Jouault,Christelle Brimont,Denis Scalbertet al. International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany Communication dans un congrès hal-01908565v1
Indirect excitons in polar GaN/(AlGa)N quantum wells Maria Vladimirova,Thierry Guillet,Christelle Brimont,Pierre Lefebvre,Thierry Bretagnonet al. International school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia Communication dans un congrès hal-01932812v1
On the nature of light emission in polar GaN/(AlGa)N quantum wells Maria Vladimirova,Thierry Guillet,Christelle Brimont,Denis Scalbert,Benoit Jouaultet al. International Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece Communication dans un congrès hal-01932705v1
Indirect excitons in polar group III nitride quantum wells. Fedor Fedichkin,Benoit Jouault,Thierry Guillet,Christelle Brimont,Pierre Valvinet al. 8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova Communication dans un congrès hal-01388929v1
Transport of indirect excitons in GaN quantum wells. Thierry Guillet,Benoit Jouault,Fedor Fedichkin,Pierre Lefebvre,Christelle Brimontet al. International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States Communication dans un congrès hal-01388983v1
Anisotropic optical properties of a homoepitaxial (Zn, Mg)O/ZnO quantum well grown on a-plane ZnO substrate Mohammed Jassim Mohammed Ali,Jean-Michel Chauveau,Thierry Bretagnon PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, Paris, France. pp.598-601, ⟨10.1002/pssc.201510238⟩ Communication dans un congrès istex hal-01429048v1
Indirect excitons in AlGaN/GaN polar quantum wells. Maria Vladimirova,Benoit Jouault,Fedor Fedichkin,Thierry Guillet,Christelle Brimontet al. 17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan Communication dans un congrès hal-01388908v1
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates. Fedor Fedichkin,Benoit Jouault,Maria Vladimirova,Thierry Guillet,Christelle Brimontet al. Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy Communication dans un congrès hal-01305122v1
Indirect excitons in wide band gap semiconductors. Fedor Fedichkin,Benoit Jouault,Thierry Guillet,Christelle Brimont,Pierre Valvinet al. International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy Communication dans un congrès hal-01389731v1
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells. Fedor Fedichkin,Benoit Jouault,Peristera Andreakou,Pierre Valvin,Maria Vladimirovaet al. 15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France Communication dans un congrès hal-01305383v1
Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs Julien Brault,B. Damilano,Daniel Rosales,Thierry Bretagnon,Bernard Gil SPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩ Communication dans un congrès hal-01021435v1
Excitonic recombination dynamics in non-polar and semi-polar AlGaN/GaN multiple QWs Daniel Rosales,Bernard Gil,Thierry Bretagnon,Brahim Guizal,Zhang Fanet al. 5th International symposium on growth on nitrides, May 2014, France Communication dans un congrès hal-01021275v1
Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs Daniel Rosales,Bernard Gil,Thierry Bretagnon,Fan Zhang,Serdal Okuret al. SPIE PHOTONIC WEST, Feb 2014, sann francisco, United States. pp.Proceedings of SPIE 8986, Article Number: 89860L, ⟨10.1117/12.2036984⟩ Communication dans un congrès hal-01021314v1
Time-resolved photuminescence spectroscopy investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells. Thierry Bretagnon,Luc Beaur,Bernard Gil,Thierry Guillet,Christelle Brimontet al. SPIE-OPTO-Photonic West. "Oxyde-based Materials and Devices"., Jan 2012, San Francisco, United States Communication dans un congrès hal-00806326v1
Optical investigation of non polar ZnO/(Zn,Mg)O quantum wells Luc Beaur,Thierry Bretagnon,Thierry Guillet,Christelle Brimont,Bernard Gilet al. 11th International Conference on Light-Matter Coupling in Nanostructures (PLMCN11), Apr 2011, Berlin, Germany. pp.1225, ⟨10.1002/pssc.201100263⟩ Communication dans un congrès istex hal-00633317v1
Optical properties of high quality factor optical resonators incorporating GaN/AlN Quantum Dots and Wells Meletios Mexis,Sylvain Sergent,Thierry Guillet,Christelle Brimont,Thierry Bretagnonet al. 11th International Conference on Light-Matter Coupling in Nanostructures (PLMCN11), Apr 2011, Berlin, Germany Communication dans un congrès hal-00633287v1
Optical investigations of non-polar homo-epitaxial ZnO/(Zn,Mg)O quantum wells Luc Beaur,Thierry Guillet,Bernard Gil,Christelle Brimont,Thierry Bretagnonet al. 2ème Colloque National ZnO, Jun 2011, PARIS, France Communication dans un congrès hal-00633315v1
High quality factor of AlN microdisks embedding GaN quantum dots Meletios Mexis,Sylvain Sergent,Thierry Guillet,Christelle Brimont,Thierry Bretagnonet al. International Workshop on Nitride Semiconductors (IWN2010), Sep 2010, Tampa, United States. pp.2328-2330, ⟨10.1002/pssc.201001161⟩ Communication dans un congrès istex hal-00633272v1
Photonic cavities embedding GaN quantum dots for the UV spectral range Thierry Guillet,Meletios Mexis,Christelle Brimont,Thierry Bretagnon,Sylvain Sergentet al. 3N Workshop Nanolum, Jun 2010, Porquerolles, France Communication dans un congrès hal-00633289v1
Strong exciton-photon coupling in ZnO microcavities : Promoting polariton physics up to 300K Thierry Guillet,Stéphane Faure,Christelle Brimont,Thierry Bretagnon,Bernard Gilet al. 9th Japan-France Workshop on Nanomaterials, Nov 2010, Toulouse, France Communication dans un congrès hal-00633295v1
Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells T. Gühne,Z. Bougrioua,M. Nemoz,R. Chmielowski,Thierry Bretagnonet al. PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, Jul 2008, Rio de Janeiro, Brazil. pp.191-192, ⟨10.1063/1.3295362⟩ Communication dans un congrès hal-00546363v1
Interplay between bragg- and cavity-mode polaritons in a ZnO microcavity Stéphane Faure,Christelle Brimont,Thierry Guillet,T. Bretagnon,B. Gilet al. Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Apr 2009, Lecce, Italy Communication dans un congrès hal-00389907v1
Polarized emission from a single GaN/AlN quantum dot : Experiment and theory Thierry Guillet,Richard Bardoux,Thierry Bretagnon,Bernard Gil,Pierre Lefebvreet al. Journées Boîtes Quantiques, Jun 2009, Grenoble, France Communication dans un congrès hal-00633306v1
Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells. Thierry Bretagnon,Thierry Guillet,Pierre Lefebvre,Bernard Gil,Christian Morhain 9th Physics of Light-Matter Coupling and Nanostructures - PLMCN., Apr 2009, Lecce, Italy Communication dans un congrès hal-00797192v1
Polarized emission from a single GaN/AlN quantum dot : Experiment and theory Thierry Guillet,Richard Bardoux,B. Gil,T. Bretagnon,P. Lefebvreet al. International Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan Communication dans un congrès hal-00389909v1
Polarized emission from a single GaN/AlN quantum dot : Experiment and theory P. Lefebvre,Thierry Guillet,Richard Bardoux,B. Gil,T. Bretagnonet al. International Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland Communication dans un congrès hal-00389910v1
Etude du couplage fort exciton-photon dans les microcavités massives ZnO par photoluminescence Stéphane Faure,Thierry Guillet,T. Bretagnon,P. Lefebvre,B. Gil 11ème Journées de la Matière Condensée (JMC11), Aug 2008, Strasbourg, France Communication dans un congrès hal-00389906v1
Emission polarisée d'une boîte quantique unique GaN/AlN : expérience et théorie Thierry Guillet,Richard Bardoux,B. Gil,P. Lefebvre,T. Bretagnonet al. 11ème Journées de la Matière Condensée, Aug 2008, Strasbourg, France Communication dans un congrès hal-00389559v1
Internal electric field in ZnO/Zn1-xMgxO in single quantum wells. Thierry Bretagnon,Stéphane Faure,Thierry Guillet,Pierre Lefebvre,Bernard Gilet al. Fifth International Workshop on Zinc Oxide and Related Materials., Sep 2008, Ypsilanti, Michigan., United States Communication dans un congrès hal-00797187v1
Which quasi-particles in wide band gap bulk microcavities ? Stéphane Faure,Thierry Guillet,P. Lefebvre,T. Bretagnon,T. Taliercioet al. 8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan Communication dans un congrès hal-00388717v1
Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells Thierry Guillet,Thierry Bretagnon,Thierry Taliercio,Pierre Lefebvre,Bernard Gilet al. 6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩ Communication dans un congrès istex hal-01308666v1
Synthes de nanofils de ZnO dans des matériaux poreux ordonnés: experience et simulation moléculaire Jean-Claude Tedenac,Aude. Mezy,T. Bretagnon,Benoit Coasne,Corine Gerardinet al. Matériaux 2006, Nov 2007, Dijon, France Communication dans un congrès hal-00339577v1
Linear polarization of the emission of a single polar GaN/AlN quantum dot Richard Bardoux,Pierre Lefebvre,Thierry Guillet,Thierry Bretagnon,Thierry Taliercioet al. 7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States Communication dans un congrès hal-01306799v1
Radiative lifetime in wurtzite GaN/AlN quantum dots. Richard Bardoux,T. Bretagnon,Thierry Guillet,P. Lefebvre,T. Taliercioet al. International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩ Communication dans un congrès hal-00389911v1
Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects Richard Bardoux,Pierre Lefebvre,Thierry Guillet,Thierry Bretagnon,Thierry Taliercioet al. 14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain Communication dans un congrès hal-01306794v1
Morphology control of ZnO nanomaterials using double hydrophilis block polymers Jean-Claude Tedenac,Aude. Mezy,Corine Gerardin,Didier Null Tichit,S. Suwanboonet al. 2007 MRS fall meeting, Nov 2007, Boston, United States. pp.1 Communication dans un congrès hal-00279166v1
Contrôle de la croissance de nanomatériaux d'oxyde de zinc par des copolymères diblocs hydrophiles. Aude Mezy,S. Suwanboon,Didier Ravot,Jean-Claude Tedenac,Corine Gérardinet al. Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France Communication dans un congrès hal-01309706v1
Polar and non-polar ZnO/ZnMgO quantum well heterostructures Christian Morhain,Jean-Michel Chauveau,M. Teisseire,B. Lo,M. Laügtet al. International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France Communication dans un congrès hal-01309700v1
Optical properties of ZnO nanorods and nanowires Aude Mezy,Stéphanie Anceau,T. Bretagnon,Pierre Lefebvre,T. Taliercioet al. E-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩ Communication dans un congrès istex hal-00389990v1
Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects. Richard Bardoux,Thierry Guillet,P. Lefebvre,T. Taliercio,T. Bretagnonet al. International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan Communication dans un congrès hal-00389908v1
Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells Thierry Bretagnon,Pierre Valvin,Pierre Lefebvre,Bernard Gil,Christian Morhainet al. International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. pp.12-15, ⟨10.1016/j.jcrysgro.2005.10.034⟩ Communication dans un congrès istex hal-01309928v1
Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots. Pierre Lefebvre,Thierry Bretagnon,Thierry Taliercio,Thierry Guillet,Bernard Gilet al. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany Communication dans un congrès hal-01309937v1
Synthèse de nanofils de ZnO dans des Matériaux Poreux Ordonnés: Experience et Simulation Moléculaire. Aude Mezy,Jean-Claude Tedenac,Benoit Coasne,S. Suwanboon,Didier Ravotet al. Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France Communication dans un congrès hal-01309705v1
Morphology Control of ZnO Nanomaterials using Double Hydrophilic Block Copolymers Aude Mezy,Didier Ravot,Corine Gerardin,Didier Null Tichit,Jean-Claude Tedenacet al. MRS Fall Meeting, Dec 2005, Boston, United States. pp.Rb15-05.1 Communication dans un congrès hal-00389989v1
Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects. Thierry Bretagnon,Pierre Valvin,Pierre Lefebvre,Bernard Gil,Christian Morhain E-MRS Spring Meeting - Symposium G : ZnO and Related Materials., May 2005, Strasbourg, France Communication dans un congrès hal-01309933v1
Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells Romuald Intartaglia,Thierry Taliercio,Pierre Valvin,Guilhem Almuneau,Pierre Lefebvreet al. 5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩ Communication dans un congrès istex hal-01309930v1
Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots Thierry Taliercio,Pierre Valvin,Romuald Intartaglia,Vincent Sallet,J.C. Harmandet al. 5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩ Communication dans un congrès istex hal-01309747v1
Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots S. Kalliakos,Thierry Bretagnon,Pierre Lefebvre,Sandrine Juillaguet,T. Taliercioet al. 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩ Communication dans un congrès hal-00543738v1
Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots. Pierre Lefebvre,Sokratis Kalliakos,Thierry Bretagnon,Thierry Taliercio,Bernard Gilet al. E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France Communication dans un congrès hal-01310227v1
Carrier recombination processes in GaAsN: from the dilute limit to alloying Romuald Intartaglia,Thierry Taliercio,Pierre Lefebvre,Thierry Bretagnon,Thierry Guilletet al. E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩ Communication dans un congrès hal-01310044v1
Evidence de l'interaction dipôle-dipôle dans la photoluminescence résolue en temps des boîtes quantiques GaN/AlN. Laurent Chusseau,Pierre Lefebvre,Thierry Bretagnon,Bernard Gil Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France Communication dans un congrès hal-01312278v1
Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillars Thierry Taliercio,Sébastien Rousset,Pierre Lefebvre,Thierry Bretagnon,Thierry Guilletet al. European Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., European Materials Research Society, May 2004, Strasbourg, France. pp.783-790, ⟨10.1016/j.spmi.2004.09.034⟩ Communication dans un congrès istex hal-01312254v1
Optical properties of GaN/AlN quantum boxes under high photo-excitation S. Kalliakos,Thierry Bretagnon,Pierre Lefebvre,Sandrine Juillaguet,T. Taliercioet al. 5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩ Communication dans un congrès hal-00543736v1
Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers Romuald Intartaglia,Thierry Taliercio,Bernard Gil,Pierre Lefebvre,Pierre Valvinet al. 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩ Communication dans un congrès istex hal-01312489v1
Positron lifetime spectroscopy of n-type and p-type porous silicon S. Dannefaer,T. Bretagnon,A. Foucaran,Thierry Taliercio,D. Kerret al. E-MRS Spring Conf., 1994, Strasbourg, France Communication dans un congrès hal-01792466v1
Positron annihilation investigation of porous silicon S. Dannefaer,T. Bretagnon,A. Foucaran,T. Taliercio,D. Kerret al. ICSMM-7, 1994, Banff, Canada Communication dans un congrès hal-01792487v1

Poster de conférence (14)

On the nature of light emission in polar GaN/(AlGa)N quantum wells. Christelle Brimont,Thierry Guillet,Denis Scalbert,Benoit Jouault,Pierre Valvinet al. 12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France. Poster de conférence hal-01907860v1
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells. Fedor Fedichkin,Peristera Andreakou,Pierre Valvin,Maria Vladimirova,Thierry Guilletet al. Condensed Matter in Paris – CMD25 – JMC14. , Aug 2014, Paris, France. Poster de conférence hal-01305395v1
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells. F Fedichkin,P Andreakou,P Valvin,M Vladimirova,T Guilletet al. Compound Semiconductor Week 2014, May 2014, Montpellier, France. Poster de conférence hal-01305161v1
Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells Andreas Kruse,Pierre Valvin,Maria Vladimirova,Thierry Guillet,Thierry Bretagnonet al. 14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14, May 2013, Hersonissos, Crète, Greece. Poster de conférence hal-01306241v1
Optical properties of a hybrid nitride-ZnO microcavity. Pierre Lefebvre,Christelle Brimont,Thierry Guillet,Thierry Bretagnon,Bernard Gilet al. SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII"., Jan 2012, San Francisco, United States Poster de conférence hal-00708677v1
Strong coupling of multiple branches polariton in a ZnO microcavity. Stéphane Faure,Thierry Guillet,Christelle Brimont,Thierry Bretagnon,Pierre Lefebvreet al. Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain Poster de conférence hal-00797194v1
Which quasi-particle in wide band gap bulk microcavities? Stéphane Faure,Thierry Guillet,Pierre Lefebvre,Thierry Bretagnon,Thierry Taliercioet al. 2nd International School on Nanophotonics , Sep 2007, Maratea, Italy. Poster de conférence hal-01306849v1
Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments Thierry Bretagnon,Thierry Guillet,Pierre Lefebvre,Thierry Taliercio,Bernard Gilet al. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. Poster de conférence hal-01309701v1
ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence Study Thierry Bretagnon,Pierre Lefebvre,Bernard Gil,Christian Morhain International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France Poster de conférence hal-01309698v1
Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipole Richard Bardoux,Thierry Guillet,Pierre Lefebvre,Thierry Taliercio,Thierry Bretagnonet al. Wolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩ Poster de conférence hal-01309696v1
Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs. Romuald Intartaglia,Thierry Taliercio,Pierre Valvin,Thierry Guillet,Thierry Bretagnonet al. 9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France Poster de conférence hal-01312282v1
Malices et fourberies des boîtes quantiques GaN/AlN. Pierre Lefebvre,Thierry Bretagnon,Thierry Taliercio,Thierry Guillet,Bernard Gilet al. Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. Poster de conférence hal-01312258v1
Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots. Pierre Lefebvre,Thierry Bretagnon,Thierry Taliercio,Thierry Guillet,Bernard Gilet al. Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland Poster de conférence hal-01312253v1
Carrier recombination dynamics in GaN/AlN quantum dots. Thierry Bretagnon,Pierre Lefebvre,Pierre Valvin,Thierry Taliercio,Thierry Guilletet al. EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France Poster de conférence hal-01310832v1