Thomas Defforge
Associate professor at INSA Centre Val de Loire and GREMAN.
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**Thomas DEFFORGE**
Born in May 25th 1986 – French nationality
Professionnal adresses:
GREMAN – site STMicroelectronics
16 rue Pierre et Marie Curie
37071 TOURS, CEDEX 2 - France
INSA Centre Val de Loire
3 rue de la Chocolaterie – CS 23410
41034 BLOIS CEDEX – France
Associate Professor Position INSA Centre Val de Loire / GREMAN UMR 7347, Université de Tours (France)
Education
2009-2012:
PhD (electronics) at the GREMAN laboratory, Université de Tours.
PhD defended the November 12th 2012.
2009:
Masters degree at the Université de Tours.
Major: Material science
Employment
2012-2014:
Post-doc position at the GREMAN laboratory, Université de Tours.
2014-2015:
Research engineer at SiLiMiXT®, in Tours.
2015-2017:
Post-doc position at the GREMAN laboratory, Université de Tours.
Since 2017:
Associate Prof. at INSA Centre Val de Loire in Blois (France) and GREMAN in Tours.
Research activities
Research activities focused on the synthesis and characterization of porous and nanostructured semiconductors obtained by electrochemical or chemical etching (porous silicon thin film, silicon nanowires or nanoparticles) for microelectronics or energy storage applications. Involved in 15 research projects at regional, national and international (European) levels.
Theses supervision
Co-supervision of 5 theses since 2019.
Publications
Authored or co-authored more than 35 publications in international journals since 2011. Also authored 1 book chapter and 25 talks at international conferences (5 invited).
Selected publications:
\[1\] J. Joo, **T. Defforge**, A. Loni, D. Kim, Z.Y. Li, M.J. Sailor, G. Gautier, L.T. Canham. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying, *Applied Physics Letters*, **108** 153111 (2016).
\[2\] B. Bardet, **T. Defforge**, B. Negulescu, D. Valente, J. Billoué, P. Poveda, G. Gautier. Shape-controlled electrochemical synthesis of mesoporous Si/Fe nanocomposites with tailored ferromagnetic properties, *Materials Chemistry Frontiers*, **1**, 190-196 (2017).
\[3\] **T. Defforge**, M. Capelle, F. Tran-Van, G. Gautier, Plasma deposited fluoropolymer film mask for local porous silicon formation, *Nanoscale Research Letters*, **7** 344 (2012).
\[4\] B. Fodor, E. Agocs, B. Bardet, **T. Defforge**, F. Cayrel, D. Alquier, M. Fried, G. Gautier, P. Petrik. Porosity and thickness characterization of porous Si and oxidized porous Si layers – an ultraviolet-visible-mid infrared ellipsometry study, *Microporous and Mesoporous Materials*, **227**, 112-120 (2016).
\[5\] A. Chaix, A. Griveau, **T. Defforge**, V. Grimal, B. Le Borgne, G. Gautier, J. Eyer. Cell penetrating peptide decorated magnetic porous silicon nanorods for glioblastoma therapy and imaging. *RSC Advances*, **12**, 11708-11714 (2022).