Thomas Tillocher

Publications

Article dans une revue (48)

Cryogenic cyclical etching of Si using CF$_4$ plasma passivation steps: The role of CF radicals Jack Nos,Sylvain Iséni,Martin Kogelschatz,Gilles Cunge,Philippe Lefaucheuxet al. Applied Physics Letters, 2025, Featured Collection, 126 (3), pp.031602. ⟨10.1063/5.0245217⟩ Article dans une revue hal-04905588v1
Cryogenic etching of SiO x F y and SiO 2 in SF 6 /H 2 plasma Rémi Dussart,T. Tillocher,L. Becerra,P. Lefaucheux,L. Overzet Japanese Journal of Applied Physics, 2025, 64 (5), pp.05SP01. ⟨10.35848/1347-4065/adcbb3⟩ Article dans une revue hal-05141947v1
Chemistry in Cryogenic Etching: A Tutorial Rémi Dussart,Gaelle Antoun,Thomas Tillocher,Loic Becerra,Philippe Lefaucheux Plasma Chemistry and Plasma Processing, 2025, 46 (1), pp.2. ⟨10.1007/s11090-025-10622-8⟩ Article dans une revue hal-05552929v1
Cryogenic atomic layer etching of SiO 2 based on cyclic CF 4 /Ar plasma Madjid Adjabi,Thomas Tillocher,Philippe Lefaucheux,Eva Kovacevic,Rémi Dussart Japanese Journal of Applied Physics, 2025, 64 (6), pp.06SP19. ⟨10.35848/1347-4065/add7e5⟩ Article dans une revue hal-05141960v1
Evaluation of Bosch processing and C4F 8 plasma deposition at cryogenic temperatures Jack Nos,Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux,Mohamed Boufnichel Journal of Micromechanics and Microengineering, 2024, 34 (10), pp.105011. ⟨10.1088/1361-6439/ad7a08⟩ Article dans une revue hal-04824249v1
Atomic layer etching of gallium nitride using fluorine-based chemistry Lamiae Hamraoui,Tinghui Zhang,Angela Crespi,Philippe Lefaucheux,Thomas Tillocheret al. Journal of Vacuum Science & Technology A, 2023, 41 (3), pp.032602. ⟨10.1116/6.0002452⟩ Article dans une revue hal-04075309v1
Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF 4 /O 2 and Ar plasmas Gaelle Antoun,Thomas Tillocher,Aurélie Girard,Philippe Lefaucheux,J. Faguetet al. Journal of Vacuum Science & Technology A, 2022, 40 (5), pp.052601. ⟨10.1116/6.0001885⟩ Article dans une revue hal-03772077v1
Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching Rim Ettouri,Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Vincent Fernandezet al. Surface and Interface Analysis, 2022, 54 (2), pp.134-147. ⟨10.1002/sia.7030⟩ Article dans une revue hal-03434304v1
Quasi In Situ XPS on a SiO x F y Layer Deposited on Silicon by a Cryogenic Process G. Antoun,A. Girard,T. Tillocher,P. Lefaucheux,J. Faguetet al. ECS Journal of Solid State Science and Technology, 2022, 11 (1), pp.013013. ⟨10.1149/2162-8777/ac4c7d⟩ Article dans une revue hal-03565995v1
Comparison between Bosch and STiGer Processes for Deep Silicon Etching Thomas Tillocher,Jack Nos,Gaëlle Antoun,Philippe Lefaucheux,Mohamed Boufnichelet al. Micromachines, 2021, 12 (10), pp.1143. ⟨10.3390/mi12101143⟩ Article dans une revue hal-03359000v1
Mechanism understanding in cryo atomic layer etching of ­SiO&lt;sub&gt;2&lt;/sub&gt; based upon C&lt;sub&gt;4&lt;/sub&gt;F&lt;sub&gt;8&lt;/sub&gt; physisorption Gaelle Antoun,Thomas Tillocher,Philippe Lefaucheux,Jacques Faguet,Kaoru Maekawaet al. Scientific Reports, 2021, 11 (1), pp.357. ⟨10.1038/s41598-020-79560-z⟩ Article dans une revue hal-03118852v1
Cryo atomic layer etching of SiO 2 by C F8 physisorption followed by Ar plasma Gaelle Antoun,Philippe Lefaucheux,Thomas Tillocher,Rémi Dussart,Kumiko Yamazakiet al. Applied Physics Letters, 2019, 115 (15), pp.153109. ⟨10.1063/1.5119033⟩ Article dans une revue hal-02311503v1
The role of physisorption in the cryogenic etching process of silicon Gaelle Antoun,Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux,Christophe Cardinaudet al. Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SEEB03. ⟨10.7567/1347-4065/ab1639⟩ Article dans une revue hal-02139391v1
High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films Mukesh Kulsreshath,Alexane Vital,Philippe Lefaucheux,Christophe Sinturel,Thomas Tillocheret al. Micro and Nano Engineering, 2018, 1, pp.42-48. ⟨10.1016/j.mne.2018.10.007⟩ Article dans une revue hal-02267745v1
The effect of SF 6 addition in a Cl 2 /Ar inductively coupled plasma for deep titanium etching Edouard Laudrel,Thomas Tillocher,Yannick Meric,Philippe Lefaucheux,Bertrand Boutaudet al. Journal of Micromechanics and Microengineering, 2018, 28 (5), ⟨10.1088/1361-6439/aaafe7⟩ Article dans une revue hal-01735469v1
Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C Romain Chanson,Liping Zhang,Sergej Naumov,Yuri Mankelevich,Thomas Tillocheret al. Scientific Reports, 2018, 8, pp.1886. ⟨10.1038/s41598-018-20099-5⟩ Article dans une revue hal-01696587v1
Novel Method Based on Spin-Coating for the Preparation of 2D and 3D Si-Based Anodes for Lithium Ion Batteries Marie Gabard,Mustapha Zaghrioui,David Chouteau,Virginie Grimal,Thomas Tillocheret al. ChemEngineering, 2017, Physical and Applied Chemistry of Novel Materials and Their Applications, 1 (1), pp.5. ⟨10.3390/chemengineering1010005⟩ Article dans une revue hal-01862635v1
Cryogenic plasma-processed silicon microspikes as a high-performance anode material for lithium ion-batteries Joe Sakai,Erwann Luais,Jérôme Wolfman,Thomas Tillocher,Remi Dussartet al. Journal of Applied Physics, 2017, 122 (15), pp.155103. ⟨10.1063/1.4997713⟩ Article dans une revue hal-01686032v1
Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2 plasmas Stefan Tinck,Thomas Tillocher,Violetta Georgieva,Rémi Dussart,Erik Neytset al. Plasma Processes and Polymers, 2017, 14 (9), pp.1700018. ⟨10.1002/ppap.201700018⟩ Article dans une revue hal-01577605v1
Morphology control in thin films of PS: PLA homopolymer blends by dip-coating deposition Alexane Vital,Marylène Vayer,Thomas Tillocher,Remi Dussart,Mohamed Boufnichelet al. Applied Surface Science, 2017, 393, pp.127-133. ⟨10.1016/j.apsusc.2016.09.151⟩ Article dans une revue hal-01561189v1
Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation Liping Zhang,Jean-Francois de Marneffe,Floriane Leroy,Philippe Lefaucheux,Thomas Tillocheret al. Journal of Physics D: Applied Physics, 2016, 49 (17), pp.175203. ⟨10.1088/0022-3727/49/17/175203⟩ Article dans une revue hal-01324407v1
Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches Wassim Kafrouni,Thomas Tillocher,Julien Ladroue,Philippe Lefaucheux,Mohamed Boufnichelet al. Vacuum, 2016, 133, pp.90. ⟨10.1016/j.vacuum.2016.08.019⟩ Article dans une revue hal-01577601v1
Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation Stefan Tinck,Thomas Tillocher,Remi Dussart,Erik Neyts,Annemie Bogaerts Journal of Physics D: Applied Physics, 2016, 49 (38), pp.385201. ⟨10.1088/0022-3727/49/38/385201⟩ Article dans une revue hal-01374746v1
Cryogenic etching of silicon with SF&lt;sub&gt;6&lt;/sub&gt; inductively coupled plasmas: a combined modelling and experimental study Stefan Tinck,Thomas Tillocher,Rémi Dussart,Annemie Bogaerts Journal of Physics D: Applied Physics, 2015, 48, pp.155204. ⟨10.1088/0022-3727/48/15/155204⟩ Article dans une revue hal-01135854v1
Polymer masks for structured surface and plasma etching Alexane Vital,Marylène Vayer,Christophe Sinturel,Thomas Tillocher,Philippe Lefaucheuxet al. Applied Surface Science, 2015, 332, pp.237. ⟨10.1016/j.apsusc.2015.01.040⟩ Article dans une revue hal-01219273v1
Modification of poly(styrene) thin films and enhancement of cryogenic plasma etching resistance by ruthenium tetroxide vapor staining Alexane Vital,Marylène Vayer,Christophe Sinturel,Thomas Tillocher,Philippe Lefaucheuxet al. Polymer, 2015, 76, pp.123-130. ⟨10.1016/j.polymer.2015.08.062⟩ Article dans une revue hal-01228427v1
Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas Floriane Leroy,Liping Zhang,Thomas Tillocher,Koichi Yatsuda,Kaoru Maekawaet al. Journal of Physics D: Applied Physics, 2015, 48, pp.435202. ⟨10.1088/0022-3727/48/43/435202⟩ Article dans une revue hal-01217648v1
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies Remi Dussart,Thomas Tillocher,Philippe Lefaucheux,Mohamed Boufnichel Journal of Physics D: Applied Physics, 2014, pp.123001. ⟨10.1088/0022-3727/47/12/123001⟩ Article dans une revue hal-00959819v1
Alternated process for the deep etching of titanium Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Remi Dussart Journal of Micromechanics and Microengineering, 2014, 24, pp.075021. ⟨10.1088/0960-1317/24/7/075021⟩ Article dans une revue hal-01015146v1
Low Damage Cryogenic Etching of Porous Organosilicate Low-k Materials Using SF6/O2/SiF4 Liping Zhang,Rami Ljazouli,Philippe Lefaucheux,Thomas Tillocher,Remi Dussartet al. ECS Journal of Solid State Science and Technology, 2013, 2 (6), pp.N131. ⟨10.1149/2.001306jss⟩ Article dans une revue hal-00831339v1
A novel amorphization-etch alternating process for Si(100) Nasreddine Mekkakia Maaza,Remi Dussart,Thomas Tillocher,Philippe Lefaucheux,Pierre Ranson Journal of Micromechanics and Microengineering, 2013, 23, pp.045023. ⟨10.1088/0960-1317/23/4/045023⟩ Article dans une revue hal-00831302v1
Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film Liping Zhang,Rami Ljazouli,Philippe Lefaucheux,Thomas Tillocher,Remi Dussartet al. Electrochemical and Solid-State Letters, 2012, 2 (2), pp.N5. ⟨10.1149/2.007302ssl⟩ Article dans une revue hal-00831289v1
Breakdown study of dc silicon micro-discharge devices Laurent Schwaederlé,Mukesh Kulsreshath,Lawrence J. Overzet,Philippe Lefaucheux,Thomas Tillocheret al. Journal of Physics D: Applied Physics, 2012, 45, pp.065201. ⟨10.1088/0022-3727/45/6/065201⟩ Article dans une revue hal-00667649v1
Study of dc micro-discharge arrays made in silicon using CMOS compatible technology Mukesh Kulsreshath,Laurent Schwaederlé,Lawrence J. Overzet,Philippe Lefaucheux,Julien Ladroueet al. Journal of Physics D: Applied Physics, 2012, 45, pp.285202. ⟨10.1088/0022-3727/45/28/285202⟩ Article dans une revue istex hal-00713105v1
Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches Thomas Defforge,Gaël Gautier,Thomas Tillocher,Remi Dussart,François Tran-Van Journal of Vacuum Science & Technology A, 2012, 30 (1), pp.010601. ⟨10.1116/1.3665217⟩ Article dans une revue hal-00655000v1
Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects Thomas Tillocher,Wassim Kafrouni,Julien Ladroue,Philippe Lefaucheux,Mohamed Boufnichelet al. Journal of Micromechanics and Microengineering, 2011, 21, pp.085005. ⟨10.1088/0960-1317/21/8/085005⟩ Article dans une revue istex hal-00655002v1
Scalloping removal on DRIE via using low concentrated alkaline solutions at low temperature Thomas Defforge,Xi Song,Gaël Gautier,Thomas Tillocher,Remi Dussartet al. Sensors and Actuators A: Physical , 2011, 170 (1-2), pp.114. ⟨10.1016/j.sna.2011.05.028⟩ Article dans une revue istex hal-00655001v1
Boron acceptor concentration in diamond from excitonic recombination intensities J. Barjon,T. Tillocher,N. Habka,O. Brinza,J. Achardet al. Physical Review B, 2011, 83 (7), pp.073201. ⟨10.1103/PhysRevB.83.073201⟩ Article dans une revue hal-03575962v1
n-Type CVD diamond: Epitaxy and doping Marie-Amandine Pinault-Thaury,T. Tillocher,N. Habka,D. Kobor,F. Jomardet al. Materials Science and Engineering: B, 2011, 176 (17), pp.1401-1408. ⟨10.1016/j.mseb.2011.02.015⟩ Article dans une revue istex hal-02442430v1
Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth Marie-Amandine Pinault-Thaury,T. Tillocher,D. Kobor,N. Habka,F. Jomardet al. Journal of Crystal Growth, 2011, 335 (1), pp.31-36. ⟨10.1016/j.jcrysgro.2011.06.007⟩ Article dans une revue istex hal-02441128v1
Integrated micro-plasmas in silicon operating in helium Remi Dussart,Lawrence J. Overzet,Philippe Lefaucheux,Thierry Dufour,Mukesh Kulsreshathet al. The European Physical Journal D : Atomic, molecular, optical and plasma physics, 2010, 60, pp.601-608. ⟨10.1140/epjd/e2010-00272-7⟩ Article dans une revue hal-01303160v2
Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers Georges Frangieh,Marie-Amandine Pinault-Thaury,Julien Barjon,Thomas Tillocher,François Jomardet al. Physica Status Solidi A (applications and materials science), 2009, Special Issue : Hasselt Diamond Workshop 2009 - SBDD XIV, 206 (9), pp.2000-2003. ⟨10.1002/pssa.200982223⟩ Article dans une revue istex hal-02442483v1
SO2 passivating chemistry for silicon cryogenic deep etching Corinne Y. Duluard,Remi Dussart,Thomas Tillocher,Laurianne E. Pichon,Philippe Lefaucheuxet al. Plasma Sources Science and Technology, 2008, 17, pp.045008. ⟨10.1088/0963-0252/17/4/045008⟩ Article dans une revue istex hal-00349344v1
Two Cryogenic Processes Involving SF6, O2, and SiF4 for Silicon Deep Etching Thomas Tillocher,Remi Dussart,Lawrence J. Overzet,Xavier Mellhaoui,Philippe Lefaucheuxet al. Journal of The Electrochemical Society, 2008, 155 (3), pp.D187. ⟨10.1149/1.2826280⟩ Article dans une revue hal-00349343v1
Silicon cryo-etching of deep holes Thomas Tillocher,Remi Dussart,Xavier Mellhaoui,Philippe Lefaucheux,Mohamed Boufnichelet al. Microelectronic Engineering, 2007, 84, pp.1120. ⟨10.1016/j.mee.2007.01.148⟩ Article dans une revue istex hal-00365907v1
The passivation layer formation in the cryo-etching plasma process Remi Dussart,Xavier Mellhaoui,Thomas Tillocher,Philippe Lefaucheux,Mohamed Boufnichelet al. Microelectronic Engineering, 2007, 84, pp.1128. ⟨10.1016/j.mee.2007.01.048⟩ Article dans une revue istex hal-00365894v1
Oxidation threshold in silicon etching at cryogenic temperatures Thomas Tillocher,Philippe Lefaucheux,Xavier Mellhaoui,Remi Dussart,Pierre Ransonet al. Journal of Vacuum Science & Technology A, 2006, 24 (4), pp.1073. ⟨10.1116/1.2210946⟩ Article dans une revue hal-00365909v1
SiOxFy passivation layer in silicon cryoetching Xavier Mellhaoui,Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux,Pierre Ransonet al. Journal of Applied Physics, 2005, 98, pp.104901-10 Article dans une revue hal-00098638v1

Communication dans un congrès (121)

UV absorption spectroscopy to study the role of CF radicals during cryogenic etching of Si in CF&lt;sub&gt;4&lt;/sub&gt; plasmas Martin Kogelschatz,Jack Nos,Sylvain Iséni,Gilles Cunge,Philippe Lefaucheuxet al. Journées 2025 Groupement de Recherche (GdR) étude des milieux ionisés Plasmas froids créés par décharge et laser (EMILI), Oct 2025, Saint-etienne, France Communication dans un congrès hal-05325839v1
Plasma interactions with a surface cooled to a cryogenic temperature Rémi Dussart,Thomas Tillocher,Loic Becerra,Philippe Lefaucheux International Conference on Phenomena in Ionized Gases (ICPIG), Gilles Cartry, Jul 2025, Aix- en- Provence, France Communication dans un congrès hal-05552948v1
Cryo- Atomic Layer Etching of Si, SiO2 and Si3N4 Rémi Dussart,Thomas Tillocher,Gaelle Antoun,Jack Nos,Philippe Lefaucheux ALD for Industry, Europäische Forschungsgesellschaft Dünne Schichten (EFDS), Mar 2025, Dresden (GERMANY), Germany Communication dans un congrès hal-05142003v1
Cryogenic etching of SiO2 by SF6 – H2 plasma Rémi Dussart,Thomas Tillocher,Loic Becerra,Philippe Lefaucheux,Lawrence J. Overzet International Plasma Technology Joint Conference (IPTJC), Plasma Cryogenic Etching Processes (PlaCEP), Jun 2025, New Taipei City (Taiwan), Taiwan Communication dans un congrès hal-05552986v1
Cryogenic Atomic Layer Etching of Silicon and Silicon Compounds Rémi Dussart,Madjib Adjabi,Eva Kovacevic,Loic Becerra,Philippe Lefaucheuxet al. The Electrochemical Society (ECS), Oct 2025, Chicago, France Communication dans un congrès hal-05552940v1
Tutorial lecture : The chemistry of cryogenic etching Rémi Dussart,Thomas Tillocher,Loic Becerra,Philippe Lefaucheux International Symposium on Plasma Chemistry, Université du Minnesota, Jun 2025, Minneapolis, United States Communication dans un congrès hal-05142034v1
Plasma cryogenic processes applied to SiO2 deep etching Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux,Loic Becerra,Lawrence J. Overzet Plathinium, Sep 2025, Antibes, France Communication dans un congrès hal-05552982v1
Cryo- Atomic Layer Etching of Si, SiO2 and Si3N4 Rémi Dussart,Thomas Tillocher,Gaelle Antoun,Jack Nos,Philippe Lefaucheux ALD for Industry, Mar 2025, Dresde (Germany), Germany Communication dans un congrès hal-05552952v1
Cryogenic ALE of SiO&lt;sub&gt;2&lt;/sub&gt; using CF&lt;sub&gt;4&lt;/sub&gt; plasma Madjib Adjabi,Jack Nos,Sylvain Iséni,Gilles Cunge,Martin Kogelschatzet al. AVS 25th International Conference on Atomic Layer Deposition (ALD 2025) featuring the 12th International Atomic Layer Etching Workshop (ALE 2025), Jun 2025, Jeju Island (South Korea), South Korea Communication dans un congrès hal-05325605v1
Cryogenic bosch process using CF&lt;sub&gt;4&lt;/sub&gt; plasma in deposition regime Thomas Tillocher,Jack Nos,Sylvain Iséni,Gilles Cunge,Martin Kogelschatzet al. The International Plasma Technology Joint Conference 2025 (IPTJC2025), Jun 2025, New Taipei City - Taiwan, Taiwan Communication dans un congrès hal-05325733v1
Atomic Layer Etching of SiO&lt;sub&gt;2&lt;/sub&gt; using CF&lt;sub&gt;4&lt;/sub&gt; plasma in deposition mode at cryogenic temperature Madjib Adjabi,Jack Nos,Sylvain Iséni,Gilles Cunge,Martin Kogelschatzet al. PLAsma THIN film International Union Meeting 2025 (PLATHINIUM 2025), Sep 2025, Antibes (France), France Communication dans un congrès hal-05325597v1
SiC plasma etching technology processes for power and optoelectronic devices Mihai Lazar,Nour Beydoun,Frédéric Marty,Elise Usureau,Enora Marion Vuillermetet al. PESM 2024, IMEC Belgium, Jun 2024, Leuven (BE), Belgium Communication dans un congrès hal-04797018v1
Cryogenic etching of SiOxFy and SiO2 in SF6/H2 plasma Remi Dussart,Lawrence J. Overzet,Philippe Lefaucheux,Thomas Tillocher Dry Process Symposium, Nov 2024, New Chitose, Japan Communication dans un congrès hal-04824284v1
Enhanced physisorption of CF radicals on Si surfaces cooled at cryogenic temperature and application to deep etching Jack Nos,Sylvain Iséni,G. Cunge,M. Kogelschatz,Philippe Lefaucheuxet al. 45th International Symposium on Dry Process (DPS2024), Nov 2024, Hokkaïdo, Japan Communication dans un congrès hal-04805187v1
Physico-chemical mechanisms involved in SiF4/O2 plasma cryogenic deposition and etching Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux PESM & PlaCEP, Jun 2024, Leuven, Belgium Communication dans un congrès hal-04824287v1
La gravure plasma, une étape critique dans la technologie SiC. Mécanismes physico-chimiques et applications Mihai Lazar,Nour Beydoun,Frédéric Marty,Elise Usureau,Enora Vuillermetet al. Journées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France Communication dans un congrès hal-04799422v1
Cryogenic etching processes applied to the next generation of nanoelectronic technologies Rémi Dussart,Thomas Tillocher,Gaelle Antoun,Jack Nos,Philippe Lefaucheux Korean International Semiconductor conference on Manufacturing Technology, Nov 2023, Busan (South Korea), South Korea Communication dans un congrès hal-05552975v1
Plasma cryogenic etching processes: what are the mechanisms involved at very low temperature? Rémi Dussart,Thomas Tillocher,Gaelle Antoun,Jack Nos,Philippe Lefaucheuxet al. JSPP-14/ICDDPS-4, Apr 2023, Okinawa, Japan, Japan Communication dans un congrès hal-05552980v1
Evaluation of Bosch processing at cryogenic temperatures Jack Nos,T. Tillocher,Philippe Lefaucheux,Rémi Dussart,Aurélie Girardet al. Plasma Etch and Strip in Microelectronics, Jun 2023, Grenoble, France Communication dans un congrès hal-04138955v1
Passivation mechanisms involved in cryo-etching processes Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux,Jack Nos,Gaelle Antounet al. ISPLASMA 2023 / ICPLANTS 2023, Mar 2023, Gifu, Japan Communication dans un congrès hal-04038995v1
Plasma cryogenic etching processes: what are the mechanisms involved at very low temperature ? Rémi Dussart,Thomas Tillocher,Gaelle Antoun,Jack Nos,Philippe Lefaucheuxet al. 14th EU-Japan Joint Symposium on Plasma Processing (JSPP) 2023, Satoshi Hamaguchi, Apr 2023, Okinawa, Japan, Japan Communication dans un congrès hal-04072312v1
Mechanisms and Benefits of Cryogenic Processes in Silicon Based Material Atomic Layer Etching Rémi Dussart,Rim Ettouri,Jack Nos,Gaelle Antoun,Philippe Lefaucheuxet al. AVS 69th International Symposium and Exhibition,, American Vacuum Society, Nov 2023, Portland (OR-USA), United States Communication dans un congrès hal-05552977v1
SF6 and Ar plasma based atomic layer etching of Gallium Nitride (GaN) Lamiae Hamraoui,Philippe Lefaucheux,Thomas Tillocher,Mohamed Boufnichel,Rémi Dussart ALD/ALE 2022, Jun 2022, Ghent, Belgium Communication dans un congrès hal-04511533v1
Cryo-ALE of Si and SiO2 using SF6 Physisorption Jack Nos,Gaelle Antoun,T. Tillocher,Philippe Lefaucheux,Rémi Dussartet al. Plasma Cryogenic Etching Processing (PlaCEP), May 2022, Orleans, France Communication dans un congrès hal-04138936v1
SF6 Physisorption based cryo-ALE of silicon Jack Nos,Gaelle Antoun,Thomas Tillocher,Philippe Lefaucheux,Aurélie Girardet al. ALD-ALE, Jun 2022, Ghent, Belgium Communication dans un congrès hal-04138943v1
Aspect-Ratio-Dependent Etch effects in Titanium Deep Reactive Ion Etching Rim Ettouri,Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Jodie Phunget al. PLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France Communication dans un congrès hal-03389062v1
Anisotropic Reactive Ion Etching of Titanium Using SF6/O2/Ar plasma Rim Ettouri,Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Hadrien Philippeet al. 47th International Conference on Micro and Nano Engineering (MNE), Sep 2021, Turin, Italy Communication dans un congrès hal-03389072v1
Atomic Layer Etching of Gallium Nitride (GaN) using fluorinated chemistry Lamiae Hamraoui,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart,Mohamed Boufnichel 42nd International Symposium on Dry Process, Nov 2021, Online, Japan Communication dans un congrès hal-03539418v1
Atomic layer etching of Gallium nitride (GaN) using SF6/Ar plasmas Lamiae Hamraoui,Gaëlle Antoun,Thomas Tillocher,Philippe Lefaucheux,Rémi Dussartet al. ALD/ALE 2021, Jun 2021, Virtual meeting, United States Communication dans un congrès hal-03280147v1
Atomic layer etching of Gallium Nitride (GaN) using SF6 and Ar plasmas Lamiae Hamraoui,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart,Mohamed Boufnichel PLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France Communication dans un congrès hal-03539383v1
SiOxFy layer deposition for cryogenic nanoscale etching Gaelle Antoun,Thomas Tillocher,Philippe Lefaucheux,Jack Nos,Aurélie Girardet al. PLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France Communication dans un congrès hal-03539368v1
Plasma cryogenic etching : benefits of cooling the substrate at a low temperature in etching process technologies Remi Dussart,Thomas Tillocher,Gaelle Antoun,Jack Nos,Philippe Lefaucheuxet al. 42nd International Symposium on Dry Process, Nov 2021, Online, Japan Communication dans un congrès hal-03539474v1
Nanoscale cryogenic process for highly selective etch of Si3N4 over Si Gaelle Antoun,Thomas Tillocher,Philippe Lefaucheux,Aurélie Girard,Christophe Cardinaudet al. ALD/ALE 2021, Jun 2021, Virtual meeting, United States Communication dans un congrès hal-03280162v1
Titanium isotropic and anisotropic etching for MEMS applications Rim Ettouri,Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Jodie Phunget al. Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP 2021), Aug 2021, Paris, France Communication dans un congrès hal-03388707v1
Cryogenic etching applied to next generation interconnects Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux 2021 Virtual MRS spring meeting, MRS, Apr 2021, Seattle (Virtual meeting), United States Communication dans un congrès hal-03280129v1
Atomic Layer Etching at cryogenic temperature Gaëlle Antoun,Gaelle Antoun,Philippe Lefaucheux,Thomas Tillocher,Remi Dussartet al. Plasma Thin Film International Union Meeting, Sep 2019, Antibes, France Communication dans un congrès hal-02311323v1
Cryogenic process for Atomic Layer Etching Gaëlle Antoun,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart,Kumiko Yamazakiet al. Plasma Etch and Strip in Microtechnology, May 2019, Grenoble, France Communication dans un congrès hal-02311291v1
Plasma processes applied to SiO2 cryo-atomic layer etching Gaëlle Antoun,Remi Dussart,Philippe Lefaucheux,Thomas Tillocher,Tahara Shigeruet al. XXXIV International Conference on Phenomena in Ionized Gases - 10th International Conference on Reactive Plasmas, Jul 2019, Sapporo, Japan Communication dans un congrès hal-02311288v1
Atomic Layer Etching at low substrate temperature Gaëlle Antoun,Philippe Lefaucheux,Thomas Tillocher,Remi Dussart,Kumiko Yamazakiet al. 19th International Conference on Atomic Layer Deposition - 6th International Atomic Layer Etching Workshop, Jul 2019, Seattle, United States Communication dans un congrès hal-02311308v1
Bulk micromachined Titanium MEMS Gwenaël Bécan,Baptiste Rousset,Samson Edmond,Nathalie Isac,Maïté Do Valeet al. 16th NAMIS Workshop (NAMIS 2018), Jun 2018, Oulu, Finland Communication dans un congrès hal-02306373v1
Low-k material cryoetch using high boiling point organic compounds to reduce plasma induced damage Romain Chanson,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart,Liping Zhanget al. 40th International Symposium on Dry Process, Nov 2018, Nagoya, France Communication dans un congrès hal-02311275v1
Cryogenic processes for silicon deep etching, low-K materials and atomic layer etching Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux,Koichi Yatsuda,Kaoru Maekawa International Symposium on Advanced Plasma Science, Mar 2018, Nagoya, Japan Communication dans un congrès hal-01735471v1
The role of SiF4 physisorption in the cryogenic etching process of silicon Gaëlle Antoun,Philippe Lefaucheux,Thomas Tillocher,Remi Dussart,Tahara Shigeruet al. 40th International Symposium on Dry Process, Nov 2018, Nagoya, Japan Communication dans un congrès hal-02311267v1
Titanium-based MEMS: Application for a novel implantable feedthrough using TTV (Through Titanium Vias) technologies Bertrand Boutaud,Edouard Laudrel,Marion Woytasik,Elie Lefeuvre,Thomas Tillocheret al. 6th Micro/Nano-Electronics Packaging and Assembly, Design and Manufacturing Forum (MiNaPAD 2018), May 2018, Grenoble, France Communication dans un congrès hal-02306370v1
Cryo-etching mechanism characterization by in-situ spectroscopic ellipsometry Remi Dussart,Gaëlle Antoun,Thomas Tillocher,Philippe Lefaucheux Surface Fest 2018, Jun 2018, Bordeaux, France Communication dans un congrès hal-02311254v1
Microstructuration of titanium for implantable components Edouard Laudrel,Thomas Tillocher,Philippe Lefaucheux,Marion Woytasik,Fabrice Michelet al. Journées Nationales sur les Technologies Emergentes en micro-nanofabrication, Nov 2017, Orléans, France Communication dans un congrès hal-02306063v1
Cryogenic etching applied to the realization of high density capacitor with a homopolymer mask Mukesh Kulsreshath,Christophe Sinturel,Philippe Lefaucheux,Marylène Vayer,Thomas Tillocheret al. 21th International Colloquium on Plasma Processes, Jun 2017, Nice, France Communication dans un congrès hal-01577611v1
Cryoetching mechanisms and STiGer process evaluation Remi Dussart,Philippe Lefaucheux,Thomas Tillocher International Symposium on Dry Process 2016 (DPS 2016), Nov 2016, Sapporo, Japan Communication dans un congrès hal-01561210v1
Cryogenic processes for advanced material plasma etching Remi Dussart,Thomas Tillocher,Philippe Lefaucheux Quo vadis : Complex plasmas - TR 24, Aug 2016, Hambourg, Germany Communication dans un congrès hal-01374747v1
Effects of gas and surface temperatures during cryogenic etching of silicon with SF6/O2 Stefan Tinck,Erik Neyts,Thomas Tillocher,Remi Dussart,Annemie Bogaerts 69th Gaseous Electronic Conference, Oct 2016, Bochum, France Communication dans un congrès hal-01379701v1
Low-Damage etching of highly porous OSG low-k dielectrics Jean-Francois de Marneffe,Liping Zhang,Mikhail Baklanov,Koichi Yatsuda,Kaoru Maekawaet al. SPIE Advanced Lithography 2016, Feb 2016, San José, United States Communication dans un congrès hal-01280267v1
Numerical and experimental investigation of cryogenic etching of silicon and porous low-dielectric Stefan Tinck,Thomas Tillocher,Remi Dussart,Erik Neyts,Annemie Bogaerts International Symposium on Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan Communication dans un congrès hal-01561212v1
Cryoetching mechanisms and STiGer process evaluation Rémi Dussart,Thomas Tillocher,Philippe Lefaucheux 38th dry process symposium, Nov 2016, Sapporo, Japan Communication dans un congrès hal-01577607v1
Cryoetching processes applied to ULK material Floriane Leroy,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart,Koichi Yatsudaet al. 37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan Communication dans un congrès hal-01228477v1
Bulk titanium deep etching by plasma processes Edouard Laudrel,Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Remi Dussart , 20th International Colloquium on Plasma Processes (CIP), Jun 2015, Saint-Etienne, France Communication dans un congrès hal-01166023v1
Cryoetching processes applied to ULK material Floriane Leroy,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart,Christian Dussaratet al. 37th International Symposium on Dry process , Nov 2015, Awaji, Japan Communication dans un congrès hal-01287233v1
Cryogenic etching of silicon with SF6/O2/SiF4 plasmas: a modelling and experimental study Stefan Tinck,E.C. Neyts,Thomas Tillocher,Remi Dussart,Annemie Bogaerts 22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium Communication dans un congrès hal-01228451v1
Reduction of plasma induced damage of porous low-k materials using a cryogenic etching process Thomas Tillocher,Floriane Leroy,Liping Zhang,Philippe Lefaucheux,Koichi Yatsudaet al. 22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium Communication dans un congrès hal-01228448v1
Surface state improvement in GaN deep etching for power electronics applications Nicolas Gosset,Floriane Leroy,Thomas Tillocher,Julien Ladroue,Philippe Lefaucheuxet al. 37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan Communication dans un congrès hal-01228470v1
Plasma Cryogenic Etching: from 3D Integration to Low-k Materials Thomas Tillocher,Remi Dussart,Floriane Leroy,Philippe Lefaucheux,Mohamed Boufnichelet al. China Semiconductor Technology International Conference, Mar 2015, Shanghai, China Communication dans un congrès hal-01151533v1
Cryogenic Etching of Porous Organosilicate Low-k Materials: Fluorine based plasma analysis Floriane Leroy,Thomas Tillocher,Liping Zhang,A. Girard,Christophe Cardinaudet al. Plasma Etch and Strip in Microtechnology, Apr 2015, Leuven, Belgium Communication dans un congrès hal-01151528v1
Submicronic etched features of silicon with high aspect ratio obtained by cryogenic plasma deep-etching through perforated polymer thin films Alexane Vital,Mohamed Boufnichel,Remi Dussart,Nicolas Gosset,Philippe Lefaucheuxet al. 2015 MRS Spring Meeting & Exhibit, Apr 2015, San francisco, United States Communication dans un congrès hal-01151542v1
DRY DEEP ETCHING OF BULK TITANIUM BY PLASMA PROCESSES Edouard Laudrel,Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Remi Dussart AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States Communication dans un congrès hal-01228465v1
Cryogenic etching of porous organosilicate low-k materials: Reduction of plasma induced damage Floriane Leroy,Thomas Tillocher,Liping Zhang,Philippe Lefaucheux,Koichi Yatsudaet al. AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States Communication dans un congrès hal-01228458v1
Reduction of plasma induced damage in cryogenic etching of low-k materials Thomas Tillocher,Floriane Leroy,Liping Zhang,Philippe Lefaucheux,Christian Dussaratet al. 4th French Symposium on Emerging Technologies for micro-nanofabrication, Nov 2015, Ecully, France Communication dans un congrès hal-01277115v1
Limitation of surface defects in deep GaN etching Nicolas Gosset,Thomas Tillocher,Floriane Leroy,Julien Ladroue,Philippe Lefaucheuxet al. AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States Communication dans un congrès hal-01228462v1
Low damage cryoetching of low-K materials Remi Dussart,Thomas Tillocher,Floriane Leroy,Philippe Lefaucheux,Koichi Yatsudaet al. SPIE Advanced Lithography 2015, Feb 2015, San José, United States Communication dans un congrès hal-01151543v1
A novel low temperature etch approach to reduce ULK plasma damage Liping Zhang,Jean-Francois de Marneffe,Floriane Leroy,Rami Ljazouli,Philippe Lefaucheuxet al. Plasma Etch and Strip in Microtecnology, Apr 2015, Leuven, Belgium Communication dans un congrès hal-01151524v1
Cryogenic Etching of Silicon with SF6/O2/SiF4 plasmas: a modeling and experimental study Stefan Tinck,Erik Neyts,Thomas Tillocher,Remi Dussart,Annemie Bogaerts Plasma Etch and Strip in Microtechnology, Apr 2015, Leuven, Belgium Communication dans un congrès hal-01151530v1
Multiscale etching of holes by cryogenic silicon etching Thomas Tillocher,Xiao Liu,Alexane Vital,Nicolas Gosset,Philippe Lefaucheuxet al. Plasma Etch and Strip in Microtechnology, May 2014, Gernoble, France Communication dans un congrès hal-01057242v1
Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices Nicolas Gosset,Julien Ladroue,Thomas Tillocher,Philippe Lefaucheux,Mohamed Boufnichelet al. 226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico Communication dans un congrès hal-01151851v1
Cryogenic etching of submicronic features in silicon using masks based on porous polymer films Thomas Tillocher,Alexane Vital,Marylène Vayer,Nicolas Gosset,Philippe Lefaucheuxet al. 226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico Communication dans un congrès hal-01151839v1
Submicrometric structured silicon surfaces obtained from polymer blend film by silica replication and cryogenic plasma etching Alexane Vital,Thomas Tillocher,Remi Dussart,Marylène Vayer,Christophe Sinturel Plasma Etch and Strip in Microtechnology, May 2014, Grenoble, France Communication dans un congrès hal-01057586v1
Effect of surface fluorination on GaN deep dry etching defects Nicolas Gosset,Julien Ladroue,Thomas Tillocher,Philippe Lefaucheux,Mohamed Boufnichelet al. Plasma Etch and Strip in Microtechnology, May 2014, Grenoble, France Communication dans un congrès hal-01057239v1
Plasma cryoetching processes for silicon and advanced materials Remi Dussart,Thomas Tillocher,Nicolas Gosset,Alexane Vital,Philippe Lefaucheuxet al. International Conference on Microelectronics and Plasma Technology, Jul 2014, Gunsan, South Korea Communication dans un congrès hal-01057585v1
Cryoetching of Silicon and Advanced Materials for 3D Interconnects Remi Dussart,Thomas Tillocher,Nicolas Gosset,Philippe Lefaucheux,Mohamed Boufnichelet al. 226th meeting of the Electroschemical Society, Oct 2014, Cancun, Mexico Communication dans un congrès hal-01151844v1
Deep etching processes for silicon micro- and nano-machining Thomas Tillocher,Philippe Lefaucheux,Remi Dussart Le Studium workshop : Bottom-up approaches to nanotechnology, May 2013, Orléans, France Communication dans un congrès hal-00831360v1
Reproducible process for Titanium deep etching Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Remi Dussart Plasma Etch and Strip in Microtechnology, Mar 2013, Louvain, Belgium Communication dans un congrès hal-00831358v1
Reproducible process for titanium deep etching Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Remi Dussart 19th International Vacuum Conference, Sep 2013, Paris, France Communication dans un congrès hal-01057233v1
Applications of cryogenic plasma etching for microtechnology and advanced CMOS manufacturing Remi Dussart,Philippe Lefaucheux,Thomas Tillocher,Pierre Ranson,Mohamed Boufnichelet al. Plasma Etch and Strip in Microtechnology, Mar 2013, Louvain, Belgium Communication dans un congrès hal-00831344v1
Integrated microplasmas on silicon: performances and limitations Remi Dussart,Mukesh Kulsreshath,Valentin Félix,Lawrence J. Overzet,Judith Goldaet al. 19th International Vacuum Conference, Sep 2013, Paris, France Communication dans un congrès hal-01056618v1
Plasma deep etching of silicon, titanium and gallium nitride for microtechnology Remi Dussart,Philippe Lefaucheux,Thomas Tillocher,Nicolas Gosset,Julien Ladroueet al. AVS 60th International Symposium & Exhibition, Oct 2013, United States Communication dans un congrès hal-01006364v1
Titanium deep etching for medical applications Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Remi Dussart AVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States Communication dans un congrès hal-01057236v1
Plasma surface interactions in deep dry etching Thomas Tillocher,Julien Ladroue,Philippe Lefaucheux,Mohamed Boufnichel,Remi Dussart Workshop on particle - surface interactions : from surface analysis to materials processing, Jun 2013, Luxembourg, Luxembourg Communication dans un congrès hal-00831337v1
Dry deep etching of GaN wide-bandgap semiconductor Nicolas Gosset,Julien Ladroue,Thomas Tillocher,Philippe Lefaucheux,Mohamed Boufnichelet al. 19th International Vacuum Conference, Sep 2013, Paris, France Communication dans un congrès hal-01056606v1
Dry deep etching of GaN wide band-gap Semiconductor Nicolas Gosset,Julien Ladroue,Thomas Tillocher,Philippe Lefaucheux,Mohamed Boufnichelet al. AVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States Communication dans un congrès hal-01057235v1
Deep etching of gallium nitride by chlorine based plasma Remi Dussart,Julien Ladroue,Thomas Tillocher,Mohamed Boufnichel,Nicolas Gossetet al. Journées Nationales des Technologies Emergentes, May 2013, Evian, France Communication dans un congrès hal-00831346v1
Investigations in SF6 and Cl2/Ar plasmas used for titanium deep etching by means of mass spectrometry Thomas Tillocher,Judith Golda,Philippe Lefaucheux,Bertrand Boutaud,Pierre Ransonet al. ESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal Communication dans un congrès hal-00831352v1
Damage free cryogenic etching of porous organosilicate low-k films for advanced interconnect application Liping Zhang,Rami Ljazouli,Philippe Lefaucheux,Thomas Tillocher,Remi Dussartet al. AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States Communication dans un congrès hal-00747749v1
Development and limitations of microplasma arrays on silicon operating in DC Remi Dussart,Mukesh Kulsreshath,Laurent Schwaederlé,Valentin Felix,Philippe Lefaucheuxet al. AVS 59th International Symposium and Exhibition, Oct 2012, United States Communication dans un congrès hal-00747741v1
Deep GaN Etching : Role of SiCl4 in Plasma Chemistry Julien Ladroue,Mohamed Boufnichel,Thomas Tillocher,Philippe Lefaucheux,Pierre Ransonet al. AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States Communication dans un congrès hal-00747746v1
Development of microdicharges in silicon operating in DC for medical applications Mukesh Kulsreshath,Laurent Schwaederlé,Lawrence J. Overzet,Thomas Tillocher,Sébastien Doziaset al. 4th International Conference on Plasma Medecine, Jun 2012, Orléans, France Communication dans un congrès hal-00831349v1
Development and characterization of microplasma arrays on Silicon Remi Dussart,Thierry Dufour,Mukesh Kulsreshath,Valentin Felix,Laurent Schwaederléet al. International Workshop on Physics of Microplasmas, May 2012, Bochum, Germany Communication dans un congrès hal-00707932v1
Caractérisation de matrices de micro plasmas sur silicium Mukesh Kulsreshath,Laurent Schwaederlé,Valentin Felix,Philippe Lefaucheux,Thomas Tillocheret al. XIIeme congrès de la division Plasmas de la Société Française de Physique, May 2012, Orléans, France Communication dans un congrès hal-00707935v1
Integrated microplasmas on silicon: a new tool for lab-on-a-chip applications Remi Dussart,Mukesh Kulsreshath,Valentin Felix,Lawrence J. Overzet,Thomas Tillocheret al. Cancer Cells On Chip, Jun 2012, Lyon, France Communication dans un congrès hal-00707933v1
Formation of black silicon by cryogenic plasma etching processes Thomas Tillocher,Jérémy Pereira,Nasreddine Mekkakia Maaza,Philippe Lefaucheux,Pierre Ransonet al. Micro- and Nano-Engineering (MNE), Sep 2012, Toulouse, France Communication dans un congrès hal-00831357v1
Development of microdicharge arrays in silicon operating in DC and AC Mukesh Kulsreshath,Laurent Schwaederlé,Lawrence J. Overzet,Thomas Tillocher,Sébastien Doziaset al. European Physical Society/International Conference on Plasma Physics, Jul 2012, Stockholm, Sweden Communication dans un congrès hal-00831351v1
Optimization of STiGer process used to etch high aspect ratio silicon microstructures Thomas Tillocher,Philippe Lefaucheux,Julien Ladroue,Mohamed Boufnichel,Pierre Ransonet al. AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States Communication dans un congrès hal-00747743v1
Characterisation of Silicon based micro discharge plasma arrays in Direct Current (DC) at atmospheric pressure Mukesh Kulsreshath,Laurent Schwaederlé,Philippe Lefaucheux,Thomas Tillocher,Julien Ladroueet al. 6th International Workshop on Microplasmas, Apr 2011, Paris, France Communication dans un congrès hal-00707925v1
Deep Gallium Nitride Etching: ways to avoid etching defects Julien Ladroue,Mohamed Boufnichel,Thomas Tillocher,Philippe Lefaucheux,Pierre Ransonet al. 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Mar 2011, Nagoya, Japan Communication dans un congrès hal-00696396v1
Obtaining a smooth surface after deep GaN etching Julien Ladroue,Mohamed Boufnichel,Thomas Tillocher,Philippe Lefaucheux,Pierre Ransonet al. 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France Communication dans un congrès hal-00696419v1
Deep GaN Etching by Inductively Coupled Plasma Julien Ladroue,Mohamed Boufnichel,Thomas Tillocher,Philippe Lefaucheux,Pierre Ransonet al. HeteroSiC-WASMPE 2011, Jun 2011, Tours, France Communication dans un congrès hal-00696418v1
Deep etching of bulk titanium by plasma Thomas Tillocher,Julien Ladroue,Wassim Kafrouni,Mukesh Kulsreshath,Philippe Lefaucheuxet al. 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France Communication dans un congrès hal-00696425v1
STiGer process for silicon deep etching: extended scalloping reduction on submicron trenches Wassim Kafrouni,Thomas Tillocher,Julien Ladroue,Philippe Lefaucheux,Mohamed Boufnichelet al. 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France Communication dans un congrès hal-00696422v1
Deep silicon etching of 0.8 µm to hundreds of microns wide trenches with the STiGer process Thomas Tillocher,Wassim Kafrouni,Julien Ladroue,Philippe Lefaucheux,Pierre Ransonet al. AVS 58th International Symposium & Exhibition, Oct 2011, Nashville, United States Communication dans un congrès hal-00696428v1
Deep Gallium Nitride Etching Julien Ladroue,Mohamed Boufnichel,Thomas Tillocher,Philippe Lefaucheux,Pierre Ransonet al. 63rd Gaseous Electronics Conference, Oct 2010, Paris, France Communication dans un congrès hal-00696376v1
Deep GaN Etching by Inductively Coupled Plasma Julien Ladroue,Mohamed Boufnichel,Thomas Tillocher,Philippe Lefaucheux,Pierre Ransonet al. 3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France Communication dans un congrès hal-00487363v1
Micro Hollow Cathode Discharge Arrays in silicon devices Remi Dussart,Mukesh Kulsreshath,Lawrence J. Overzet,Laurent Schwaederlé,Thomas Tillocheret al. 63rd Gaseous Electronics Conference, Oct 2010, Paris, France Communication dans un congrès hal-00681902v1
Gravure du GaN pour la prochaine génération de diodes Schottky Julien Ladroue,Remi Dussart,Thomas Tillocher,Philippe Lefaucheux,Pierre Ranson Workshop MNTS 12-20, Minatec, Mar 2010, Grenoble, France Communication dans un congrès hal-00487358v1
Ignition and extinction of a Micro Hollow Cathode Discharge operating in DC regime Remi Dussart,Mukesh Kulsreshath,Thierry Dufour,Lawrence J. Overzet,Philippe Lefaucheuxet al. AVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States Communication dans un congrès hal-00696390v1
Silicon deep cryoetching with the STiGer process Thomas Tillocher,Vincent L. Girault,Guillaume Gomme,Franck Moro,Laurianne E. Pichonet al. 3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France Communication dans un congrès hal-00487360v1
Optimization of STiGer process for silicon deep etching Thomas Tillocher,Wassim Kafrouni,Vincent Girault,Julien Ladroue,Philippe Lefaucheuxet al. 63rd Gaseous Electronics Conference, Oct 2010, Paris, France Communication dans un congrès hal-00696366v1
Deep Inductively Coupled Plasma Etching of GaN Julien Ladroue,Mohamed Boufnichel,Thomas Tillocher,Philippe Lefaucheux,Pierre Ransonet al. AVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States Communication dans un congrès hal-00696393v1
Study of an MHCD operating in He using optical and electrical diagnostics Remi Dussart,Thierry Dufour,Thomas Tillocher,Mukesh Kulsreshath,Olivier Aubryet al. Diagnostics Microplasmas, Mar 2010, Germany Communication dans un congrès hal-00487365v1
A comparative study on O2 and SO2 passivating chemistry for silicon deep cryogenic etching Corinne Y. Duluard,Thomas Tillocher,Laurianne E. Pichon,Remi Dussart,Philippe Lefaucheuxet al. AVS 53rd International Symposium & Exhibition, Nov 2009, San Francisco, United States Communication dans un congrès hal-00442683v1
Cryoetching of silicon for MEMS and microelectronic components Remi Dussart,Philippe Lefaucheux,Pierre Ranson,Laurianne E. Pichon,Corinne Y. Duluardet al. 16th International Colloquium on Plasma Processes, Jun 2007, France Communication dans un congrès hal-00442662v1
SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature Laurianne E. Pichon,Corinne Y. Duluard,Thomas Tillocher,Remi Dussart,Philippe Lefaucheuxet al. 18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105 Communication dans un congrès hal-00444241v1
Enhanced robustness of the cryogenic process for silicon deep etching Remi Dussart,Thomas Tillocher,El-Houcine Oubensaid,Philippe Lefaucheux,Pierre Ransonet al. Micro- and Nano-Engineering, Sep 2007, Copenhague, Denmark Communication dans un congrès hal-00444248v1
A new generation of cryogenic processes for silicon deep etching Remi Dussart,Philippe Lefaucheux,Pierre Ranson,Laurianne E. Pichon,Corinne Y. Duluardet al. 60th Gaseous Electronics Conference, Oct 2007, Arlington, United States Communication dans un congrès hal-00442668v1
SiOxFy passivation layer characterization in the silicon cryoetching Xavier Mellhaoui,Remi Dussart,Thomas Tillocher,Philippe Lefaucheux,Lawrence J. Overzetet al. Eighth International Conference on Advanced Surface Engineering (8th ICASE), Apr 2006, Japan Communication dans un congrès hal-00442663v1
Mechanisms and optimization in the cryogenic etching plasma process Thomas Tillocher,Remi Dussart Workshop on Silicon dry processing, Sep 2006, Aix-La-Chapelle, Germany Communication dans un congrès hal-00442676v1

Poster de conférence (17)

Cryo-ALE of Si based on SF6 physisorption Jack Nos,Thomas Tillocher,Philippe Lefaucheux,Jacques Faguet,Kaoru Maekawaet al. PLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France Poster de conférence hal-03539330v1
Cryo-ALE of Si based on SF6 Physisorption Jack Nos,Gaelle Antoun,Thomas Tillocher,Philippe Lefaucheux,Rémi Dussart Journées Jeunes Chercheurs, Mar 2021, Orleans, France, France Poster de conférence hal-04138885v1
Cryo-ALE of Silicon based on SF6 physisorption Jack Nos,Gaelle Antoun,Thomas Tillocher,Philippe Lefaucheux,Jacques Faguetet al. PLATHINIUM 2021, Sep 2021, Visioconférence, France Poster de conférence hal-04138918v1
Bulk Titanium Micromachining using Deep Reactive Ion Etching Rim Ettouri,Thomas Tillocher,Philippe Lefaucheux,Bertrand Boutaud,Rémi Dussart 15e Journées du Réseau des Plasmas Froids, Sep 2020, Saint-Dié-des-Vosges, France Poster de conférence hal-03388672v1
The role of SiF4 physisorption in silicon cryoetching Gaëlle Antoun,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart,Christophe Cardinaudet al. Plasma Thin Film International Union Meeting, Sep 2019, Antibes, France Poster de conférence hal-02311339v1
Analysis of mechanisms involved in cryogenic ALE Gaëlle Antoun,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart,Kumiko Yamazakiet al. 19th International Conference on Atomic Layer Deposition - 6th International Atomic Layer Etching Workshop, Jul 2019, Seattle, France Poster de conférence hal-02311314v1
INTRODUCTION AU PROCÉDÉ DE GRAVURE CRYOGÉNIQUE DU SILICIUM Gaëlle Antoun,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart 15e Congrès de la Société Française de Physique Division Plasmas, Jun 2018, Bordeaux, France Poster de conférence hal-02311219v1
Cryogenic ALE of silicon oxide Nicolas Holtzer,Thomas Tillocher,Philippe Lefaucheux,Remi Dussart Plasma Etch and Strip in Microtechnology, Oct 2017, Leuven, Belgium Poster de conférence hal-02306057v1
Cryogenic Atomic Layer Etching of SiO2 Nicolas Holtzer,Thomas Tillocher,Philippe Lefaucheux,Rémi Dussart 17th International Conference on Atomic Layer Deposition, Jul 2017, Denver, United States Poster de conférence hal-01577612v1
Silicon micromachining at cryogenic temperature Thomas Tillocher,Philippe Lefaucheux,Mohamed Boufnichel,Remi Dussart Design, Test, Integration and Packaging of MEMS/MOEMS 2017 (DTIP17), May 2017, Bordeaux, France Poster de conférence hal-01561233v1
Titanium microstructuring for implantable components Edouard Laudrel,Thomas Tillocher,Yannick Méric,Philippe Lefaucheux,Marion Woytasiket al. Design, Test, Integration and Packaging of MEMS/MOEMS, May 2017, Bordeaux, France Poster de conférence hal-01561245v1
Advance in low-k cryogenic etching of porous organoscilicate : Investigation of a new gas with higher boiling point Organic (HBPO) and comparison with C4F8 Floriane Leroy,Nataniel Brochu,Romain Chanson,Remi Dussart,Thomas Tillocheret al. Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France Poster de conférence hal-01344722v1
Cryogenic etching of silicon with SF6/O2: a computational and experimental study Stefan Tinck,Erik Neyts,Thomas Tillocher,Remi Dussart,Annemie Bogaerts Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France Poster de conférence hal-01344725v1
Deep silicon etching: STiGer vs. BOSCH Chengkun Tu,Ying Cui,Remi Dussart,Thomas Tillocher,Philippe Lefaucheux Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France Poster de conférence hal-01344704v1
Enhanced reproducibility of SiO2 atomic layer etching by addition of O2 steps Thomas Tillocher,Remi Dussart,Nicolas Holtzer,Philippe Lefaucheux International Symposium of Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan Poster de conférence hal-01561230v1
Chlorine-based plasma deep etching of bulk titanium Edouard Laudrel,Thomas Tillocher,Yannick Méric,Philippe Lefaucheux,Bertrand Boutaudet al. International Symposium on Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan Poster de conférence hal-01561222v1
Near Atmospheric Pressure Etching of Silicon by Microplasma Valentin Felix,Vincent Ah-Leung,Judith Golda,Philippe Lefaucheux,Olivier Aubryet al. International workshop on microplasmas, May 2015, Newark, France Poster de conférence hal-01166020v1

Brevet (1)

REALISATION DE BATTERIES 3D PAR VOIE LIQUIDE Nathalie Poirot,Fouad Ghamouss,Thomas Tillocher,Marie Gabard France, N° de brevet: FR3059158A1. 2018 Brevet hal-05308117v1