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208 résultats
Analysis of the charge sharing effect in the SET sensitivity of bulk 45nm standard cell layouts under heavy ions29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark
Communication dans un congrès
hal-02086379v1
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Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ionsMicroelectronics Reliability, 2018, 88-90, pp.920-924. ⟨10.1016/j.microrel.2018.07.018⟩
Article dans une revue
hal-02089778v1
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In-depth resolution for LBIC technique by two-photon absorptionSemiconductors, 2007, 41 (4), pp.371-375, 10.1134/S106378260704001X. ⟨10.1134/S106378260704001X⟩
Article dans une revue
istex
hal-00204572v1
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Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with Heavy Ion DataEuropean Conference on Radiation and its Effects on Components and Systems (RADECS), Sep 2023, Toulouse, France
Communication dans un congrès
hal-04308603v1
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Single-Event Latchup sensitivity: Temperature effects and the role of the collected chargeMicroelectronics Reliability, 2021, 119, ⟨10.1016/j.microrel.2021.114087⟩
Article dans une revue
hal-03187849v1
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Total Ionizing Dose effects in DDR3 SDRAMs under Co-60 and X-ray irradiationEuropean Conference on Radiation Effects on Components and Systems (RADECS), Sep 2018, Goteborg, Sweden
Communication dans un congrès
hal-02088721v1
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Laser-Induced Current Transients in Silicon-Germanium HBTsIEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2936-2942
Article dans une revue
hal-00397926v1
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Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS TechnologyIEEE Transactions on Nuclear Science, 2013, 60 (4), pp.2635-2639. ⟨10.1109/TNS.2012.2231437⟩
Article dans une revue
hal-00880480v1
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Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localizationMicroelectronics Reliability, 2003, 43 (3), pp.439 - 444. ⟨10.1016/S0026-2714(02)00339-6⟩
Article dans une revue
istex
hal-01887647v1
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Assessing the Reliability of Successive Approximate Computing Algorithms under Fault InjectionJournal of Electronic Testing: : Theory and Applications, 2019, ⟨10.1007/s10836-019-05806-y⟩
Article dans une revue
hal-02145492v1
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Evaluation of SRAMs Reliability for Space Electronics Using Ultra Short Laser Pulses19th Symposium on Microelectronics Technology and Devices (SBMicro 2004), 2004, Brazil. pp.1
Communication dans un congrès
hal-00185409v1
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Single Event Transients (SETs) in RF Circuits15th Single-Event Effects Symposium, 2006, Long Beach, United States
Communication dans un congrès
hal-00398023v1
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Failure analysis of advanced CMOS technology: some trends, state of the art and future challengesEuropean Symposium on Reliability of Electron Devices (ESREF), 2008, Maastricht, Netherlands
Communication dans un congrès
hal-00401385v1
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Evaluation of SRAMs reliability for space electronics using ultrashort laser pulsesJournal of Integrated Circuits and Systems, 2006, 1 (3), pp.11 -16
Article dans une revue
hal-00359396v1
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Jitter Improvement of Time-Resolved Photoelectric Laser Stimulation for Dynamic Imaging of Integrated CircuitsInstrumentation and Measurement Technology Conference 2007, May 2007, Varsovie, Poland. pp.1-5, 10.1109/IMTC.2007.379080, ⟨10.1109/IMTC.2007.379080⟩
Communication dans un congrès
hal-00204580v1
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Compact modeling of Optically-Gated Carbon NanoTube Field Effect TransistorTrends in NanoTechnologies 2009, Sep 2009, Barcelonna, Spain. pp._
Communication dans un congrès
hal-00399897v1
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Net integrity checking by optical localization techniques19th European Symposium Reliability on Electron Devices, Failure Physics and Analysis (ESREF) 2009, Oct 2009, Arcachon, France. pp.1
Communication dans un congrès
hal-00585657v1
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Comparison of classical and two-photon photoelectric laser stimulation capabilities for failure analysis18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2011, Incheon, South Korea. pp.1-4
Communication dans un congrès
hal-00669828v1
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Investigation of millisecond-long analog single-event transients in the LM6144 op ampIEEE Transactions on Nuclear Science, 2004, 51 (6), pp.3529 - 3536. ⟨10.1109/TNS.2004.839196⟩
Article dans une revue
hal-01887662v1
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Highlights of laser testing capabilities regarding the understanding of SEE in SRAM Based FPGAs9th European Conference on Radiation and its Effects on Components and Systems (RADECS'07), Sep 2007, Deauville, France
Communication dans un congrès
hal-00288250v1
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Remote SEE Testing Capabilities with Heavy Ions and Laser Beams at CYCLONE-HIF and ATLAS FacilitiesRadiation Effects Data Workshop, Jul 2008, Tucson, AZ, United States. pp.106-109, ⟨10.1109/REDW.2008.26⟩
Communication dans un congrès
hal-00374744v1
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Dynamic Testing of an SRAM-Based FPGA by Time-Resolved Laser Fault Injection14th IEEE International Symposium On-Line Testing (IOLT'08), Jul 2008, Rhodes, Greece. pp.295-301, ⟨10.1109/IOLTS.2008.39⟩
Communication dans un congrès
hal-00347751v1
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Characterization and modelling of laser-induced single-event burn-out in SiC power diodesESREF 2013, 2013, Arcachon, France
Communication dans un congrès
hal-01935694v1
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Applications de l acoustique picoseconde à l analyse non destructive de circuits intégrésColloque Interdisciplinaire en Instrumentation (C2I), 2004, France. pp.1
Communication dans un congrès
hal-00182903v1
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Study of Single Event Transients in High-Speed Operational Amplifiers9th European Conference on Radiation and its Effects on Components and Systems (RADECS), Sep 2007, Deauville, France. pp.97-103
Communication dans un congrès
hal-00397836v1
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Banc de génération et détection de faisceau THz par photo commutateur ultrarapide sur GaAs BT3ème journées Thz, 2005, Aussois, France
Communication dans un congrès
hal-00398013v1
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Linear Systems Analysis of Single Event Transients in Voltage Controlled Oscillators16th Single-Event Effects Symposium, 2007, Long Beach, United States
Communication dans un congrès
hal-00398028v1
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Compact modeling of optically gated carbon nanotube field effect transistorphysica status solidi (b), 2010, 247 (8), pp.1858 - 1861. ⟨10.1002/pssb.200983818⟩
Article dans une revue
hal-00495144v1
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Best practice and trends in laser testing for Single−Event EffectsRADECS Workshop 2018 and the 2nd International Conference on Radiation Effects of Electronic Devices (ICREED), May 2018, Pekin, China
Communication dans un congrès
hal-02108913v1
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An Approximate Error-Detection Technique for Multi-Core Real-Time Systems2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2019, Montpellier, France. pp.01-04, ⟨10.1109/RADECS47380.2019.9745688⟩
Communication dans un congrès
hal-03890419v1
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