Yannick ROELENS

Publications

Article dans une revue (48)

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates B Orfao,Mahmoud ABOU DAHER,H Bouillaud,Y Roelens,P Prystawkoet al. Journal of Physics D: Applied Physics, 2026, 59 (12), pp.12LT01. ⟨10.1088/1361-6463/ae506d⟩ Article dans une revue hal-05573797v1
0.53 mΩ.cm 2 /592 V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination Hugo Bouillaud,Beatriz Orfao,Etienne Okada,Yannick Roelens,Malek Zegaouiet al. IEEE Electron Device Letters, 2026, pp.1-1. ⟨10.1109/LED.2026.3652934⟩ Article dans une revue hal-05484994v1
Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications Beatriz Orfao,Amir Al Abdallah,Hugo Bouillaud,Guillaume Ducournau,Yannick Roelenset al. Electronics Letters, 2025, 61 (1), pp.e70307. ⟨10.1049/ell2.70307⟩ Article dans une revue hal-05149241v1
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band R. Peña,B. Orfao,I. Íñiguez-De-La-Torre,G. Paz,Mahmoud Abou Daheret al. IEEE Transactions on Electron Devices, 2024, 71 (8), pp.4524-4529. ⟨10.1109/TED.2024.3409202⟩ Article dans une revue hal-04665811v1
Reverse-Bias Current Hysteresis at Low Temperature in GaN Schottky Barrier Diodes B. Orfao,Mahmoud Abou Daher,R. A. Peña,B. G. Vasallo,S. Pérezet al. Journal of Applied Physics, 2024, 135 (1), pp.014501. ⟨10.1063/5.0177853⟩ Article dans une revue hal-04405976v1
High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers G. Di Gioia,E. Frayssinet,M. Samnouni,V. Chinni,P. Mondalet al. Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩ Article dans une revue hal-04115301v1
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices Thomas Bordignon,Blandine Duriez,Nicolas Guitard,Romain Duru,Clément Pribatet al. Solid-State Electronics, 2023, 210, pp.108787. ⟨10.1016/j.sse.2023.108787⟩ Article dans une revue hal-04253696v1
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples B. Orfao,G. Di Gioia,B. Vasallo,S. Pérez,J. Mateoset al. Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩ Article dans une revue hal-03741441v1
GaN Schottky diode on sapphire substrate for THz frequency multiplier applications Giuseppe Di Gioia,Mohammed Samnouni,Vinay Kumar Chinni,Priyanka Mondal,Jeanne Treuttelet al. Superlattices and Microstructures, 2022, 164, pp.107116. ⟨10.1016/j.spmi.2021.107116⟩ Article dans une revue hal-03542163v1
100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications Cyrille Gardès,Sonia Bagumako,L. Desplanque,Nicolas Wichmann,S. Bollaertet al. SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩ Article dans une revue hal-00969148v1
InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate Ndèye Arame Thiam,Yannick Roelens,Christophe Coinon,Vanessa Avramovic,Brice Grandchampet al. IEEE Electron Device Letters, 2014, 35 (10), pp.1010-1012. ⟨10.1109/LED.2014.2347256⟩ Article dans une revue hal-01090844v1
0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz Mohammed Zaknoune,Etienne Okada,Estelle Mairiaux,Yannick Roelens,Damien Ducatteauet al. IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩ Article dans une revue hal-00955679v1
Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions J. Shi,Nicolas Wichmann,Yannick Roelens,S. Bollaert Applied Physics Letters, 2013, 102, pp.243503-1-4. ⟨10.1063/1.4811787⟩ Article dans une revue hal-00871898v1
Terahertz emission induced by optical beating in nanometer-length field-effect transistors Philippe Nouvel,Jérémie Torres,Stéphane Blin,Hugues Marinchio,Christophe Palermoet al. Journal of Applied Physics, 2012, 111, pp.103707. ⟨10.1063/1.4718445⟩ Article dans une revue hal-00699894v1
480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design M. Zaknoune,E. Mairiaux,Yannick Roelens,N. Waldhoff,U. Rouchyet al. IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩ Article dans une revue hal-00786893v1
Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing I. Iniguez-De-La-Torre,J. Mateos,Yannick Roelens,C. Gardes,S. Bollaertet al. Nanotechnology, 2011, 22, pp.445203-1-5. ⟨10.1088/0957-4484/22/44/445203⟩ Article dans une revue istex hal-00639808v1
Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate J. Shi,Nicolas Wichmann,Yannick Roelens,S. Bollaert Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩ Article dans une revue hal-00783377v1
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation G. Moschetti,N. Wadefalk,P.A. Nilsson,Yannick Roelens,A. Noudeviwaet al. Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩ Article dans une revue istex hal-00639807v1
Three-terminal junctions operating as mixers, frequency doublers and detectors : a broad-band frequency numerical and experimental study at room temperature I. Iniguez-De-La-Torre,T. Gonzalez,D. Pardo,C. Gardes,Yannick Roelenset al. Semiconductor Science and Technology, 2010, 25, pp.125013-1-14. ⟨10.1088/0268-1242/25/12/125013⟩ Article dans une revue istex hal-00548604v1
Sb-HEMT : toward 100-mV cryogenics electronics A. Noudewiva,Yannick Roelens,Francois Danneville,A. Olivier,Nicolas Wichmannet al. IEEE Transactions on Electron Devices, 2010, 57, pp.1903-1909. ⟨10.1109/TED.2010.2050109⟩ Article dans une revue hal-00548570v1
Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor B.G. Vasallo,Nicolas Wichmann,S. Bollaert,Yannick Roelens,A. Cappyet al. IEEE Transactions on Electron Devices, 2010, 57, pp.2572-2578. ⟨10.1109/TED.2010.2058633⟩ Article dans une revue hal-00567883v1
RF doubling and rectification in three-terminal junctions : experimental characterization and Monte Carlo analysis I. Iniguez-De-La-Torre,T. Gonzalez,D. Pardo,C. Gardes,Yannick Roelenset al. Journal of Physics: Conference Series, 2009, 193, pp.012021-1-4. ⟨10.1088/1742-6596/193/1/012021⟩ Article dans une revue hal-00471812v1
Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor Nicolas Wichmann,B.G. Vasallo,S. Bollaert,Yannick Roelens,X. Wallartet al. Applied Physics Letters, 2009, 94, pp.103504-1-3. ⟨10.1063/1.3095482⟩ Article dans une revue hal-00469682v1
Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions I. Iniguez de La Torre,T. Gonzalez,D. Pardo,C. Gardes,Yannick Roelenset al. Journal of Applied Physics, 2009, 105 (9), pp.094504. ⟨10.1063/1.3124363⟩ Article dans une revue hal-00471809v1
Room-temperature terahertz spectroscopy of optically excited plasma waves in HEMTs P. Nouvel,H. Marinchio,J. Torres,C. Palermo,D. Gasquetet al. Journal of Physics: Conference Series, 2009, 193, pp.012075. ⟨10.1088/1742-6596/193/1/012075⟩ Article dans une revue hal-01904185v1
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain M. Borg,E. Lefebvre,M. Malmkvist,L. Desplanque,X. Wallartet al. Solid-State Electronics, 2008, 52, pp.775-781. ⟨10.1016/j.sse.2007.12.002⟩ Article dans une revue istex hal-00356942v1
Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation A. El Fatimy,R. Tauk,S. Boubanga,F. Teppe,N. Dyakonovaet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5, pp.244-248. ⟨10.1002/pssc.200776585⟩ Article dans une revue istex hal-00360007v1
Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors A. Shchepetov,C. Gardes,Yannick Roelens,A. Cappy,S. Bollaertet al. Applied Physics Letters, 2008, 92, pp.242105-1-3. ⟨10.1063/1.2945286⟩ Article dans une revue hal-00356666v1
Monte Carlo simulation of surface charge effects in T-branch nanojunctions T. Gonzalez,I. Iniguez de La Torre,D. Pardo,J. Mateos,S. Bollaertet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5, pp.94-97. ⟨10.1002/pssc.200776512⟩ Article dans une revue hal-00356677v1
Ballistic nanodevices for high frequency applications C. Gardes,Yannick Roelens,S. Bollaert,J.S. Galloo,X. Wallartet al. International Journal of Nanotechnology, 2008, 5, 796-808, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018698⟩ Article dans une revue hal-00356665v1
Current driven resonant plasma wave detection of terahertz radiation : toward the Dyakonov-Shur instability S. Boubanga-Tombet,F. Teppe,D. Coquillat,S. Nadar,N. Dyakonovaet al. Applied Physics Letters, 2008, 92, pp.212101-1-3. ⟨10.1063/1.2936077⟩ Article dans une revue hal-00356668v1
Comparison between the noise performance of double- and single-gate InP-based HEMTs B.G. Vasallo,Nicolas Wichmann,S. Bollaert,Yannick Roelens,A. Cappyet al. IEEE Transactions on Electron Devices, 2008, 55, pp.1535-1540. ⟨10.1109/TED.2008.921982⟩ Article dans une revue hal-00356667v1
Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors H. Marinchio,J. Torres,G. Sabatini,P. Nouvel,C. Palermoet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (1), pp.257-260. ⟨10.1002/pssc.200776572⟩ Article dans une revue hal-00327410v1
Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs B.G. Vasallo,Nicolas Wichmann,S. Bollaert,Yannick Roelens,A. Cappyet al. IEEE Transactions on Electron Devices, 2007, 54, pp.2815-2822. ⟨10.1109/TED.2007.907801⟩ Article dans une revue hal-00255757v1
Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length M.E. Levinshtein,S.L. Rumyantsev,R. Tauk,S. Boubanga,N. Dyakonovaet al. Journal of Applied Physics, 2007, 102 (6), pp.064506. ⟨10.1063/1.2781087⟩ Article dans une revue hal-00283040v1
Influence of the surface charge on the operation of ballistic T-branch junctions : a self-consistent model for Monte Carlo simulations I. Iniguez de La Torre,J. Mateos,T. Gonzalez,D. Pardo,J.S. Gallooet al. Semiconductor Science and Technology, 2007, 22, pp.663-670. ⟨10.1088/0268-1242/22/6/014⟩ Article dans une revue hal-00283039v1
Ballistic nano-devices for high frequency applications S. Bollaert,A. Cappy,Yannick Roelens,J.S. Galloo,C. Gardeset al. Thin Solid Films, 2007, 515, pp.4321-4326. ⟨10.1016/j.tsf.2006.07.178⟩ Article dans une revue istex hal-00285625v1
Room-temperature terahertz emission from nanometer field-effect transistors N. Dyakonova,A.E. Fatimy,J. Lusakowski,W. Knap,M.I. Dyakonovet al. Applied Physics Letters, 2006, 88, pp.141906-1-3 Article dans une revue hal-00126524v1
Room-temperature Terahertz Emission from Nanometer Field Effect Transistors N. Dyakonova,A. El Fatimy,J. Lusakowski,W. Knap,Michel Dyakonovet al. Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩ Article dans une revue hal-00264792v1
Characterization of superconductor coplanar resonators deposited on different substrates by thermal coevaporation D. Seron,H. Kokabi,Georges Alquié,Yannick Roelens,Nour Eddine Bourzguiet al. Journal of Superconductivity and Novel Magnetism, 2006, Proceedings of the 8th Symposium on High Temperature Superconductors in High Frequency Fields, 19 (7-8), pp.661-667. ⟨10.1007/s10948-006-0127-1⟩ Article dans une revue istex hal-00243995v1
Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors Abdelouahad El Fatimy,Frederic Teppe,Nina Diakonova,Wojciech Knap,D. Seliutaet al. Applied Physics Letters, 2006, 89, pp.131926. ⟨10.1063/1.2358816⟩ Article dans une revue hal-00540634v1
Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors A. El Fatimy,F. Teppe,N. Dyakonova,W. Knap,D. Seliutaet al. Applied Physics Letters, 2006, 89, pp.131926-1-3 Article dans une revue hal-00154920v1
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer ingaas transistors F. Teppe,M. Orlov,A.E. Fatimy,A. Tiberj,W. Knapet al. Applied Physics Letters, 2006, 89 (22), pp.222109.1-222109.3. ⟨10.1063/1.2392999⟩ Article dans une revue hal-00329604v1
Low and room temperature studies of RF to DC rectifiers based on ballistic transport L. Berdnarz,R. Rashmi,B. Hackens,V. Bayot,S. Huynenet al. Microelectronic Engineering, 2005, 81, pp.194-200 Article dans une revue hal-00125160v1
Voltage tunable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor J. Lusakowski,W. Knap,N. Dyakonova,L. Varani,J. Mateoset al. Journal of Applied Physics, 2005, 97, pp.64307-1-7 Article dans une revue hal-00125162v1
Nonlinear effects in T-branch junctions J. Mateos,B.G. Vasallo,D. Pardo,T. Gonzales,E. Pichonatet al. IEEE Electron Device Letters, 2004, 25, pp.235-237 Article dans une revue hal-00133878v1
Microscopic modeling of nonlinear transport in ballistic nanodevices J. Mateos,B.G. Vasallo,D. Pardo,J.S. Galloo,S. Bollaertet al. IEEE Transactions on Electron Devices, 2003, 50, pp.1897-1905 Article dans une revue hal-00145980v1
Ballistic nanodevices for terahertz data processing : Monte Carlo simulations J. Mateos,B.G. Vasallo,D. Pardo,T. Gonzales,Yannick Roelenset al. Nanotechnology, 2003, 14, pp.117-122 Article dans une revue hal-00145979v1

Communication dans un congrès (91)

Fabrication et caractérisation de diodes Schottky GaN dans un TP innovant au sein du PLFM de Lille Mahmoud ABOU DAHER,M Laddada,I Nhaila,Saliha Ouendi,Yannick Roelenset al. Dix-huitièmes journées Pédagogiques CNFM, JPCNFM 2025, Pôle CNFM de Rennes, Centre Commun de Microélectronique de l'Ouest, Dec 2025, Saint-Malo, France Communication dans un congrès hal-05400823v1
19 mW/μm&lt;sup&gt;2&lt;/sup&gt; and 24.5 % PAE at 94 GHz for 0.30-μm Transferred InP/GaAsSb DHBT on Si-HR Abdelmalek Zemour,Malek Zegaoui,Yannick Roelens,Etienne Okada,Pascal Chevalieret al. 2025 Device Research Conference (DRC), Jun 2025, Durham, NC, United States. pp.1 - 2, ⟨10.1109/drc66027.2025.11105732⟩ Communication dans un congrès hal-05308750v1
13 mW/μm² and 24 % PAE at 94 GHz for 0.44-μm Transferred InP/GaAsSb DHBT on Si Abdelmalek Zemour,Malek Zegaoui,Yannick Roelens,Etienne Okada,Pascal Chevalieret al. 48th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 19th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2025, Cadix, Spain Communication dans un congrès hal-05145160v1
19 mW/μm² and 24.5 % PAE at 94 GHz for 0.30-μm Transferred InP/GaAsSb DHBT on Si-HR Abdelmalek Zemour,Malek Zegaoui,Yannick Roelens,Etienne Okada,Pascal Chevalieret al. DRC 2025 | The 83rd Device Research Conference, Jun 2025, Duke University, Durham, North Carolina, United States Communication dans un congrès hal-05145163v1
Integration of InP Based Double Heterojunction Bipolar Transistor on Silicon Interposer and Associated RF Characterization A. Oliveira,O. Valorge,A. Divay,H. Boutry,T. Mourieret al. 2024 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. pp.768-771, ⟨10.23919/EuMC61614.2024.10732598⟩ Communication dans un congrès hal-04764934v1
GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement Beatriz Orfao,Mohammed Zaknoune,Malek Zegaoui,Javier Mateos,Tomás Gonzálezet al. 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.375-378, ⟨10.23919/EuMIC61603.2024.10732802⟩ Communication dans un congrès hal-04765693v1
Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements Hugo Bouillaud,Yannick Roelens,Etienne Okada,Jeanne Treuttel,Priyanka Mondalet al. 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.387-390, ⟨10.23919/EuMIC61603.2024.10732752⟩ Communication dans un congrès hal-04765465v1
Enhanced RF Switch Performance in RFSOI Technology: Achieving 74 fs R ON ·C OFF and 3.3 V RFV MAX on Thinned SOI Thomas Bordignon,Luca Lucci,Thibaud Fache,Clément Pribat,Magali Grégoireet al. 2024 IEEE European Solid-State Electronics Research Conference (ESSERC), Sep 2024, Bruges, Belgium. pp.448-451, ⟨10.1109/ESSERC62670.2024.10719593⟩ Communication dans un congrès hal-04786482v1
Aggregated 0.3 Tbit/s link using Photonics-transmitter and micromachined flat array antenna over 315-410 GHz Hadjer Nihel Khelil,Alexandre Renau,Pascal Szriftgiser,Yannick Roelens,Rédha Kassiet al. 2024 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. pp.413-416, ⟨10.23919/EuMC61614.2024.10732246⟩ Communication dans un congrès hal-04764889v1
RF Performances and De-Embedding Techniques of Passive Devices in 3D Homogeneous Integration at Sub-THz A. Oliveira,O. Valorge,C. Dubarry,Y. Roelens,M. Zaknouneet al. 2023 53rd European Microwave Conference (EuMC), Sep 2023, Berlin, Germany. pp.616-619, ⟨10.23919/EuMC58039.2023.10290293⟩ Communication dans un congrès hal-04370209v1
Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz Mahmoud ABOU DAHER,Hugo Bouillaud,Pawel Prystawko,Michal Bockowski,Etienne Okadaet al. WOCSDICE-EXMATEC, May 2023, Palerme (Italie), Italy Communication dans un congrès hal-04517550v1
Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and Astrophysics P. Mondal,G. D. Gioia,H. Bouillaud,Yannick Roelens,T. Vaceletet al. Nano, Meso, Micro: Science and Innovation for Radio and Photonic, URSI JS22, Mar 2022, Palaiseau, France. pp.87-96 Communication dans un congrès hal-03835088v1
GaAs Schottky Diodes Development for Millimeter Wave Doubler H. Bouillaud,Priyanka Mondal,Giuseppe Di Gioia,Mohammed Samnouni,Malek Zegaouiet al. Wocsdice 2021 - 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Oct 2021, Bristol, United Kingdom Communication dans un congrès hal-03827748v1
GaN schottky diode on silicon substrate for high power THz multiplier Giuseppe Di Gioia,M Samnouni,H Bouillaud,P Mondal,J Treuttelet al. WOCSDICE 2021, Jun 2021, Bristol, United Kingdom Communication dans un congrès hal-03384345v1
GaN Schottky Diode for High Power THz Generation using Multiplier Principle Giuseppe Di Gioia,V K Chinni,Malek Zegaoui,Y Cordier,A Maestriniet al. Proc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), Jun 2019, Cabourg, France Communication dans un congrès hal-03384353v1
Réalisation et caractérisation de transistors à effet de champ à hétérojonction de la filière InAlAs/InGaAs sur substrat flexible J.S. Shi,Nicolas Wichmann,Yannick Roelens,S. Bollaert 18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA-P9, 4 p Communication dans un congrès hal-00878373v1
120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax C. Gardes,S.M. Bagumako,L. Desplanque,Nicolas Wichmann,Francois Dannevilleet al. 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, 2013, Kobe, Japan. paper MoPI-25, 2 p., ⟨10.1109/ICIPRM.2013.6562604⟩ Communication dans un congrès hal-00877719v1
InAlAs/InGaAa HEMTs on polyimide flexible substrate with high cut-off frequencies J.S. Shi,Nicolas Wichmann,Yannick Roelens,S. Bollaert Journées Nationales Technologies Emergentes en Micro-Nanofabrication, JNTE 2013, 2013, Evian, France Communication dans un congrès hal-00813609v1
Low-IQ : MMIC ultra faible consommation cryogénique et ambiant pour télécommunications spatiales en bande Q S. Bollaert,Francois Danneville,Yannick Roelens,L. Desplanque,Cyrille Gardeset al. Les Rencontres du Numérique, 2013, Paris, France Communication dans un congrès hal-00974542v1
HEMTs 100nm AlSb/InAs pour applications faible bruit, faible consommation S. Bagumako,C. Gardes,L. Desplanque,Nicolas Wichmann,Francois Dannevilleet al. 18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA1-3, 4 p Communication dans un congrès hal-00878375v1
High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate J. Shi,Nicolas Wichmann,Yannick Roelens,S. Bollaert 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.15-16 Communication dans un congrès hal-00828414v1
Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate S. Bollaert,J.S. Shi,Nicolas Wichmann,Yannick Roelens 71st Annual Device Research Conference, DRC 2013, 2013, Notre Dame, IN, United States. paper III-31, 111-112, ⟨10.1109/DRC.2013.6633818⟩ Communication dans un congrès hal-00904681v1
THz detection using InP-HEMT and slot-ring antenna Philippe Artillan,Yannick Roelens,S. Bollaert 7th THz days Groupement de Recherche international (GDRi-THz’13), Mar 2013, Cargèse, France Communication dans un congrès hal-04712892v1
100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies J.S. Shi,Nicolas Wichmann,Yannick Roelens,S. Bollaert 24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩ Communication dans un congrès hal-00801043v1
Lattice matched and pseudomorphic InGaAs MOSHEMT with fT of 200GHz J.J. Mo,Nicolas Wichmann,Yannick Roelens,M. Zaknoune,L. Desplanqueet al. 24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.44-47, ⟨10.1109/ICIPRM.2012.6403314⟩ Communication dans un congrès hal-00801055v1
Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate J. Shi,Nicolas Wichmann,Yannick Roelens,S. Bollaert 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2 Communication dans un congrès hal-00801047v1
Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 300nm J. Mo,A. Olivier,Nicolas Wichmann,Yannick Roelens,L. Desplanqueet al. 17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 122, 2C3, 1-4 Communication dans un congrès hal-00597145v1
120nm AlSb/InAs HEMTs Yannick Roelens,A. Olivier,A. Noudeviwa,L. Desplanque,Francois Dannevilleet al. TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4 Communication dans un congrès hal-00591362v1
50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz J.J. Mo,Nicolas Wichmann,Yannick Roelens,M. Zaknoune,L. Desplanqueet al. 20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 Communication dans un congrès hal-00799699v1
Terahertz Emissions from Optically Excited Plasma Oscillations in HEMTs Jérémie Torres,Frédéric Teppe,Philippe Nouvel,Stéphane Boubanga-Tombet,Amine El Moutaouakilet al. 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra; Stephen M. Goodnick, Jul 2011, Santa Barbara, United States Communication dans un congrès hal-02455732v1
Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrates J. Shi,Nicolas Wichmann,Yannick Roelens,S. Bollaert 20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 Communication dans un congrès hal-00799793v1
[Invited] AlSb/InAs HEMTs : an option for performance/power trade-off ? Yannick Roelens European Microwave Week, EuMIC, Workshop W07 - High-performance narrow-bandgap HEMT technology for advanced microwave front-ends : towards the end of the roadmap ?, 2011, Manchester, United Kingdom Communication dans un congrès hal-00807120v1
THz emission induced by sub-threshold instability optical excited in nanometer-length field-effect transistors P. Nouvel,J. Torres,H. Marinchio,A. Penot,C. Palermoet al. 20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 Communication dans un congrès hal-00799965v1
100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation J.J. Mo,Nicolas Wichmann,Yannick Roelens,M. Zaknoune,L. Desplanqueet al. 23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4 Communication dans un congrès hal-00799971v1
Self aligned 200nm In0.53Ga0.47As A. Olivier,J.J. Mo,Nicolas Wichmann,Yannick Roelens,L. Desplanqueet al. TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Morocco. CDROM, session A1, papier 164, 1-3 Communication dans un congrès hal-00591363v1
Optimisation des performances à faible tension de polarisation de HEMTs de la filière antimoine A. Noudeviwa,A. Olivier,Yannick Roelens,Francois Danneville,Nicolas Wichmannet al. 17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 304, 2C2, 1-4 Communication dans un congrès hal-00597144v1
Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation Albert M.D. Noudeviwa,Yannick Roelens,Francois Danneville,Aurélien Olivier,Nicolas Wichmannet al. 5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289 Communication dans un congrès hal-00549927v1
Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics Yannick Roelens,A. Olivier,L. Desplanque,A. Noudeviwa,Francois Dannevilleet al. 68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩ Communication dans un congrès hal-00549924v1
100mV noise performances of Te-doped Sb-HEMT A. Noudeviwa,A. Olivier,Yannick Roelens,Francois Danneville,Nicolas Wichmannet al. 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩ Communication dans un congrès hal-00549922v1
High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply A. Olivier,A. Noudeviwa,Nicolas Wichmann,Yannick Roelens,L. Desplanqueet al. 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.162-165 Communication dans un congrès hal-00549918v1
Technological bricks and concepts for THz remote sensing R. Czarny,L. Morvan,Guillaume Pillet,J. P. Schnell,P. Legagneuxet al. IEEE Winter Topicals, 2010, Majorca, Spain Communication dans un congrès hal-01904171v1
Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT Laurent Chusseau,J. Torres,P. Nouvel,H. Marinchio,L. Varaniet al. OPTO, 2010, San Francisco, United States. pp.760816, ⟨10.1117/12.846874⟩ Communication dans un congrès hal-02443155v1
Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMTs Laurent Chusseau,J. Torres,P. Nouvel,H. Marinchio,L. Varaniet al. SPIE Photonics West - OPTO : Quantum Sensing and Nanophotonic Devices VII, 2010, San Francisco, CA, United States Communication dans un congrès hal-01904174v1
Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET Aurélien Olivier,Nicolas Wichmann,Jiongjong Mo,Albert M.D. Noudeviwa,Yannick Roelenset al. 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩ Communication dans un congrès hal-00549921v1
Spectroscopie terahertz des ondes de plasma excitées par battement optique dans les transistors HEMTs P. Nouvel,H. Marinchio,J. Torres,C. Palermo,Laurent Chusseauet al. Journées Térahertz, 2009, Lille, France Communication dans un congrès hal-01904182v1
Frequency response of T-shaped three branch junctions as mixers and detectors I. Iniguez de La Torre,T. Gonzalez,D. Pardo,C. Gardes,Yannick Roelenset al. 7th Spanish Conference on Electron Devices, CDE 09, 2009, Spain. pp.168-171, ⟨10.1109/SCED.2009.4800457⟩ Communication dans un congrès hal-00474095v1
RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysis I. Iñiguez-De-La-Torre,T. González,D. Pardo,Chantal Gardes,Yannick Roelenset al. EDISON 16, Aug 2009, France Communication dans un congrès hal-00401237v1
Low bandgap and plasma wave transistor for THz detection S. Bollaert,A. Shchepetov,Yannick Roelens,L. Desplanques,X. Wallartet al. European Microwave Conference, 2009, Rome, Italy Communication dans un congrès hal-01904180v1
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures G. Moschetti,P.A. Nilsson,N. Wadefalk,M. Malmkvist,E. Lefebvreet al. 21st IEEE Conference on Indium Phosphide and Related Materials, IPRM'09, 2009, United States. pp.323-325, ⟨10.1109/ICIPRM.2009.5012506⟩ Communication dans un congrès hal-00474100v1
Narrow band gap III-V based-FET for ultra low power high frequency analog applications Gilles Dambrine,S. Bollaert,Yannick Roelens,A. Noudeviwa,Francois Dannevilleet al. 67th Device Research Conference, 2009, State College, PA, United States. ⟨10.1109/DRC.2009.5354961⟩ Communication dans un congrès hal-00575689v1
AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation A. Olivier,T. Gehin,L. Desplanque,X. Wallart,Yannick Roelenset al. IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702979⟩ Communication dans un congrès hal-00360405v1
Isolation mésa par gravures humide et sèche des HEMTs AlSb/InAs sur substrat InP A. Olivier,T. Gehin,L. Desplanque,X. Wallart,J. Chenget al. 11èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2008, 2008, Bordeaux, France Communication dans un congrès hal-00361522v1
Plasma wave detection of sub-terahertz radiation : towards the Dyakonov-Shur instability S. Boubanga-Tombet,F. Teppe,D. Coquillat,S. Nadar,N. Dyakonovaet al. EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM Communication dans un congrès hal-00360411v1
HEMTs AlSb/InAs pour applications ultra faible consommation S. Bollaert,A. Olivier,Yannick Roelens,N. Wichmannn,A. Shchepetovet al. 12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, 2008, St Pierre d'Oléron, France Communication dans un congrès hal-00361523v1
Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs B.G. Vasallo,Nicolas Wichmann,S. Bollaert,Yannick Roelens,A. Cappyet al. IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702973⟩ Communication dans un congrès hal-00800960v1
Fabrication technology and device performance of ultra-short 30-nm-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs Nicolas Wichmann,A. Shchepetov,I. Duszynski,Yannick Roelens,X. Wallartet al. IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702912⟩ Communication dans un congrès hal-00360404v1
Tremendous shrinking of terahertz plasmon resonance linewidth in multichannel high-electron-mobility transistor A. Shchepetov,Chantal Gardes,Yannick Roelens,S. Bollaert,S. Boubanga-Tombetet al. EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM Communication dans un congrès hal-00360410v1
Surface charge effects in ballistic T-branch nanojunctions I. Iniguez de La Torre,J. Mateos,T. Gonzalez,D. Pardo,S. Bollaertet al. Spanish Conference on Electron Devices, 2007, Spain. pp.48-51, ⟨10.1109/SCED.2007.383993⟩ Communication dans un congrès hal-00284056v1
Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime S. Bollaert,L. Desplanque,X. Wallart,Yannick Roelens,M. Malmkvistet al. 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.20-23, ⟨10.1109/EMICC.2007.4412637⟩ Communication dans un congrès hal-00362727v1
Development of InAs/AlSb HEMT technology for high-frequency operation J. Grahn,E. Lefebvre,M. Borg,M. Malmkvist,L. Desplanqueet al. Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2007, 2007, Venice, Italy Communication dans un congrès hal-00366992v1
HEMT AlSb/InAs pour applications ultra-faible consommation S. Bollaert,Yannick Roelens,L. Desplanques,N. Wichmannn,A. Shchepetovet al. 15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C3-1-4 Communication dans un congrès hal-00370296v1
Noise behavior of InP-based double-gate and standard HEMTs : a comparison B.G. Vasallo,T. Gonzalez,D. Pardo,J. Mateos,Nicolas Wichmannet al. 19th International Conference on Noise and Fluctuations, ICNF 2007, 2007, Japan. pp.167-170, ⟨10.1063/1.2759659⟩ Communication dans un congrès hal-00284062v1
DC and RF performance of 0.2-2.4 µm gate length InAs/AlSb HEMTs M. Borg,E. Lefebvre,M. Malmkvist,L. Desplanque,X. Wallartet al. 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.67-70, ⟨10.1109/ICIPRM.2007.381124⟩ Communication dans un congrès hal-00284022v1
HEMT AlInAs/InGaAs pseudomorphique sur substrat d'InP de longueur de grille de 30nm et de Ft = 450GHz Nicolas Wichmann,A. Shchepetov,I. Duszynski,Yannick Roelens,X. Wallartet al. 15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D20 Communication dans un congrès hal-00284471v1
(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs E. Lefebvre,M. Borg,M. Malmkvist,J. Grahn,L. Desplanqueet al. 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.125-128, ⟨10.1109/ICIPRM.2007.381139⟩ Communication dans un congrès hal-00284023v1
Room-temperature terahertz emission from nanometer field-effect transistors N. Dyakonova,A.E. Fatimy,J. Lusakowski,W. Knap,M.I. Dyakonovet al. Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.145, ⟨10.1109/ICIMW.2006.368353⟩ Communication dans un congrès hal-00241317v1
Plasma wave HEMTs for THz applications A. Shchepetov,Yannick Roelens,S. Bollaert,A. Cappy,N. Dyakonovaet al. Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.136, ⟨10.1109/ICIMW.2006.368344⟩ Communication dans un congrès hal-00241319v1
Microwave characterization of supraconducting YBCO coplanar resonators deposited by thermal coevaporation on different substrates D. Seron,H. Kokabi,Georges Alquié,Yannick Roelens,Nour Eddine Bourzguiet al. 8th Symposium on High-Temperature Superconductors in High-Frequency Fields, May 2004, Parador de Aiguablava, Begur, Spain. pp.661-667, ⟨10.1007/s10948-006-0127-1⟩ Communication dans un congrès istex hal-00133913v1
InP based ballistic nanodevices A. Cappy,J.S. Galloo,S. Bollaert,Yannick Roelens,J. Mateoset al. International Conference on Indium Phosphide and Related Materials, IPRM 2005, 2005, Glasgow, Scotland, United Kingdom Communication dans un congrès hal-00125316v1
Trends and challenge in micro and nanoelectronics device research in Europe A. Cappy,Nicolas Wichmann,J.S. Galloo,S. Bollaert,Yannick Roelenset al. Topical Workshop on Heterostructure Microelectronics, TWHM 2005, 2005, Hyogo, Japan Communication dans un congrès hal-00125339v1
Theoretical and experimental characterization of Y-branch nanojunction rectifier up to 94 GHz L. Bednarz,R. Rashmi,G. Farhi,B. Hackens,V. Bayotet al. 2005, 4 pp Communication dans un congrès hal-00154895v1
New HEMT structures for THz applications A. Cappy,Nicolas Wichmann,S. Bollaert,X. Wallart,Yannick Roelenset al. Device Research Conference, DRC 2005, 2005, Santa Barbara, CA, United States Communication dans un congrès hal-00125315v1
Nanotransistors pour émission THz S. Bollaert,Yannick Roelens,A. Shchepetov,X. Wallart,A. Cappyet al. 3èmes Journées THz, 2005, Aussois, France Communication dans un congrès hal-00125897v1
Terahertz emission and noise spectra in HEMTs J. Mateos,S. Perez,D. Pardo,T. Gonzalez,J. Lusakowskiet al. Terahertz emission and noise spectra in HEMTs, L. Reggiani, 2005, Lecce, Italy. pp.423-430, ⟨10.1063/1.2138647⟩ Communication dans un congrès hal-00154897v1
Technologie, simulation et caractérisation à T=300K de dispositifs balistiques de type GaInAs/AlInAs avec grille de commande J.S. Galloo,C. Gardes,Z. Teukam,Yannick Roelens,S. Bollaertet al. Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France Communication dans un congrès hal-00126725v1
HEMTs for millimeter and sub-millimeter waves applications S. Bollaert,A. Cappy,Gilles Dambrine,I. Duszynski,Yannick Roelenset al. GDR THz, 2005, Montpellier, France Communication dans un congrès hal-00125314v1
Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure J.S. Galloo,Yannick Roelens,S. Bollaert,E. Pichonat,X. Wallartet al. 2004, pp.219-222 Communication dans un congrès hal-00133884v1
Technologie pour dispositifs AlInAs/GaInAs J.S. Galloo,E. Pichonat,S. Bollaert,Yannick Roelens,X. Wallartet al. GDR Nanoélectronique, 2004, Aussois, France Communication dans un congrès hal-00133917v1
Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures Jean-Sebastien Galloo,Emmanuelle Pichonat,Yannick Roelens,S. Bollaert,X. Wallartet al. 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩ Communication dans un congrès hal-00133896v1
Ballistic GaInAs/AlInAs devices technology and characterization at room temperature J.S. Galloo,Yannick Roelens,S. Bollaert,Emmanuelle Pichonat,X. Wallartet al. 4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.98-100, ⟨10.1109/NANO.2004.1392262⟩ Communication dans un congrès hal-00133881v1
Nanoscaled double Y-Branch junction operating as room temperature RF to DC rectifier Lukasz Bednarz,R. Rashmi,Benoit Hackens,Hervé Boutry,Vincent Bayotet al. 4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.284-286, ⟨10.1109/NANO.2004.1392326⟩ Communication dans un congrès hal-00133899v1
Résonateurs coplanaires supraconducteurs YBaCuO Yannick Roelens,Nour Eddine Bourzgui,Jean-Claude Carru Colloque TELECOM 03 et 3èmes Journées Franco-Maghrébines des Microondes et leurs Applications (JFMMA 2003), Oct 2003, Marrakech, Maroc Communication dans un congrès hal-00146029v1
Composants balistiques pour applications térahertz S. Bollaert,Yannick Roelens,Jean-Sebastien Galloo,Isabelle Huynen,Hervé Boutryet al. GDR Nanoélectronique : 1ères Journées Nationales Composants pour la micro et nano-électronique, 4èmes Journées Nationales Hétérostructures de semiconducteurs IV-IV, 2003, Grenoble, France Communication dans un congrès hal-00146019v1
Fabrication of nano-ballistic devices using high resolution process Emmanuelle Pichonat,Jean-Sebastien Galloo,Yannick Roelens,S. Bollaert,X. Wallartet al. Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain Communication dans un congrès hal-00146012v1
Room temperature nonlinear transport in InGaAs/InAlAs based ballistic nanodevices Javier Mateos,B.G. Vasallo,Daniel Pardo,Tomás González,Hervé Boutryet al. International Conference onIndium Phosphide and Related Materials, May 2003, Barbara, CA, France. pp.484-487 Communication dans un congrès hal-00145996v1
Caractérisations micro-ondes par résonateurs coplanaires des films supraconducteurs en YBaCuO déposés par coévaporation thermique D. Seron,H. Kokabi,Georges Alquié,Yannick Roelens,Nour Eddine Bourzguiet al. Conference Internationale Optique Hertzienne et Diélectrique (OHD 2003), Sep 2003, Calais, France Communication dans un congrès hal-00146018v1
Lignes coplanaires hautes impédances, influence d'une couche diélectrique Yannick Roelens,J.S. Galloo,E. Pichonat,S. Bollaert,G. Sixet al. Optique Hertzienne et Diélectrique, OHD 2003, 2003, Calais, France Communication dans un congrès hal-00146017v1
Technological fabrication of nanometric GaInAs/AlInAs ballistic devices Jean-Sebastien Galloo,Emmanuelle Pichonat,Yannick Roelens,S. Bollaert,X. Wallartet al. Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain Communication dans un congrès hal-00146040v1
Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot Yannick Roelens,Benoit Hackens,Sébastien Faniel,Cédric Gustin,Hervé Boutryet al. International Conference on Superlattices Nano-structures and Nano-devices, ICSNN-02, Jul 2002, Toulouse, France Communication dans un congrès hal-00147857v1
Etude expérimentale de résonateurs coplanaires supraconducteurs YBaCuO Yannick Roelens,M. Achani,Nour Eddine Bourzgui,Jean-Claude Carru 7èmes Journées de Caractérisation Micro-ondes et Matériaux (JCMM 2002), Mar 2002, Toulouse, France Communication dans un congrès hal-00147858v1
Effects of substrate preparation on properties of YBaCuO thin films A. Dégardin,X. Castel,M. Achani,Maryline Guilloux-Viry,E. Caristanet al. 2000, pp.1993-1994 Communication dans un congrès hal-00157906v1

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Alternative and low-cost technique to transfer III-V DHBT transistors onto Si-HR using Cu-Cu bonding for sub-THz power amplification for 6G Jihed Derouiche,Abdelmalek Zemour,Malek Zegaoui,Yannick Roelens,Pascal Chevalieret al. WOCSDICE - EXMATEC 2025, Jun 2025, Cádiz, Spain Poster de conférence hal-05186867v1
Experimental and theoretical investigation of optically excited THz plasma waves in submicron InGaA HEMTs H. Marinchio,G. Sabatini,T. Laurent,J. Pousset,C. Palermoet al. European Optical Society Annual Meeting (EOSAM 2008), 2008, Paris, France. Actes de Journées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM) Poster de conférence hal-02442942v1

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Signal-to-noise ratio in Terahertz wireless communication using field-effect-transistors as detectors L. Tohme,S. Blin,P. Nouvel,A. Pénarier,J. Torreset al. 2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), IEEE, pp.1-3, 2013, ⟨10.1109/ICNF.2013.6578992⟩ Proceedings/Recueil des communications hal-00980298v1

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Dispositifs à matériaux petit gap pour électronique ultra-faible consommation S. Bollaert,A. Olivier,Nicolas Wichmann,Yannick Roelens,L. Desplanqueet al. Leray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.183-186, 2009 Chapitre d'ouvrage hal-00575772v1

Autre publication scientifique (1)

Etude et caractérisation microondes en basses températures de résonateurs coplanaires supraconducteurs et de transistors en vue de réaliser des dispositifs micro-électroniques Yannick Roelens 2000 Autre publication scientifique hal-00158479v1