Yvon Cordier

Publications

Article dans une revue (132)

Effects of Substrate Miscut on Growth Instabilities in Homoepitaxially Grown GaN/AlGaN System Henryk Teisseyre,Stéphane Vézian,Piotr Wojnar,Robert Kucharski,Tomasz Sochackiet al. Crystal Growth & Design, 2026, 26 (6), pp.2396-2405. ⟨10.1021/acs.cgd.5c01733⟩ Article dans une revue hal-05582184v1
Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes Kevin Nadaud,Zihao Lyu,Pedro F. P. P. Rocha,Daniel Alquier,Quentin Paoliet al. APL Electronic Devices, 2026, 2 (2), pp.026107. ⟨10.1063/5.0319825⟩ Article dans une revue hal-05596640v1
Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping Ndembi Ignoumba-Ignoumba,Camille Sonneville,Thomas Kaltsounis,Vishwajeet Maurya,Hala El Rammouzet al. Applied Physics Letters, 2026, 128 (12), ⟨10.1063/5.0325369⟩ Article dans une revue hal-05577908v1
Surface oxidation and oxygen incorporation in ScAlN films grown by molecular beam epitaxy Valentina Gallardo-Mödinger,Frédéric Georgi,Xavier Wallart,Ileana Florea,Philippe Vennéguèset al. Journal of Applied Physics, 2025, 138 (24), pp.245701. ⟨10.1063/5.0303670⟩ Article dans une revue hal-05440883v1
Investigation of MoS&lt;sub&gt;2&lt;/sub&gt; growth on GaN/sapphire substrate using molecular beam epitaxy Mohamed Al Khalfioui,Minh Tuan Dau,Zineb Bouyid,Ileana Florea,Philippe Vennéguèset al. Journal of Crystal Growth, 2025, 652, pp.128047. ⟨10.1016/j.jcrysgro.2024.128047⟩ Article dans une revue hal-05224730v1
Self-limited monolayer graphene growth on SiC with propane-hydrogen CVD Chiara Mastropasqua,Ahmed El Alouani,Matthieu Paillet,Marc Portail,Mathieu Koudiaet al. npj 2D Materials and Applications, 2025, 9 (1), pp.32. ⟨10.1038/s41699-025-00554-4⟩ Article dans une revue hal-05201892v1
Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment Vishwajeet Maurya,Daniel Alquier,Hala El Rammouz,Pedro Fernandes Paes Pinto Rocha,Thomas Kaltsouniset al. Power Electronic Devices and Components, 2025, 11, pp.100092. ⟨10.1016/j.pedc.2025.100092⟩ Article dans une revue hal-05201973v1
ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate Caroline Elias,Sébastien Chenot,Florian Bartoli,Maxime Hugues,Yvon Cordier Physica Status Solidi A (applications and materials science), 2025, ⟨10.1002/pssa.202400963⟩ Article dans une revue hal-04935622v1
Modeling and Extraction of the Specific Contact Resistance of GaN p-i-n Diodes up to 40 GHz Kevin Nadaud,Zihao Lyu,Daniel Alquier,Quentin Paoli,Julien Ladroueet al. IEEE Transactions on Electron Devices, 2025, 72 (4), pp.1657-1662. ⟨10.1109/TED.2025.3539644⟩ Article dans une revue hal-04949503v1
ScAlN/GaN-on-Si (111) HEMTs for RF applications Seif El Whibi,Nagesh Bhat,Yassine Fouzi,Nicolas Defrance,Jean-Claude de Jaegeret al. Applied Physics Express, 2025, 18 (4), pp.046501. ⟨10.35848/1882-0786/adc5db⟩ Article dans une revue hal-05008937v1
Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications Ndembi Ignoumba-Ignoumba,Camille Sonneville,Adrien Bidaud,Pierre Brosselard,Eric Frayssinetet al. Power Electronic Devices and Components, 2025, 11, pp.100100. ⟨10.1016/j.pedc.2025.100100⟩ Article dans une revue hal-05099383v1
New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations Vishwajeet Maurya,Daniel Alquier,Maroun Dagher,Camille Sonneville,Dominique Plansonet al. Materials Science in Semiconductor Processing, 2025, 198, pp.109681. ⟨10.1016/j.mssp.2025.109681⟩ Article dans une revue hal-05099324v1
Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors Micka Bah,Daniel Alquier,Marie Lesecq,Nicolas Defrance,Damien Valenteet al. Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩ Article dans une revue hal-04378667v1
Comparing post-deposition and post-metallization annealing treatments on Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/GaN capacitors for different metal gates Emanuela Schilirò,Giuseppe Greco,Patrick Fiorenza,Salvatore Ethan Panasci,Salvatore Di Francoet al. AIP Advances, 2024, 14 (10), pp.105109. ⟨10.1063/5.0228323⟩ Article dans une revue hal-05201923v1
Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs Valentin Ackermann,Blend Mohamad,Hala El Rammouz,Vishwajeet Maurya,Eric Frayssinetet al. Electronics, 2024, 13 (12), pp.2350. ⟨10.3390/electronics13122350⟩ Article dans une revue hal-04673055v1
High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon Thomas Kaltsounis,Mohammed El Amrani,David Plaza Arguello,Hala El Rammouz,Matthieu Lafossaset al. Journal of Applied Physics, 2024, 136, pp.175705. ⟨10.1063/5.0228976⟩ Article dans une revue hal-05201958v1
Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility Julien Bassaler,Jash Mehta,Idriss Abid,Leszek Konczewicz,Sandrine Juillaguetet al. Advanced Electronic Materials, 2024, 11 (1), pp.2400069. ⟨10.1002/aelm.202400069⟩ Article dans une revue hal-04665123v1
Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN Caroline Elias,Maud Nemoz,Hélène Rotella,Frédéric Georgi,Stéphane Vézianet al. APL Materials, 2023, 11 (3), ⟨10.1063/5.0139588⟩ Article dans une revue hal-04240341v1
Fabrication, and direct current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes Quentin Fornasiero,Nicolas Defrance,Sylvie Lepilliet,Vanessa Avramovic,Yvon Cordieret al. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2023, 41 (1), pp.012202. ⟨10.1116/6.0002125⟩ Article dans une revue hal-03917965v1
High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers G. Di Gioia,E. Frayssinet,M. Samnouni,V. Chinni,P. Mondalet al. Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩ Article dans une revue hal-04115301v1
Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics J. Mehta,Idriss Abid,Reda Elwaradi,Yvon Cordier,F Medjdoub e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 5, pp.100263. ⟨10.1016/j.prime.2023.100263⟩ Article dans une revue hal-04194891v1
High Al-content AlGaN channel high electron mobility transistors on silicon substrate Jash Mehta,Idriss Abid,Julien Bassaler,Julien Pernot,Philippe Ferrandiset al. e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 3, pp.100114. ⟨10.1016/j.prime.2023.100114⟩ Article dans une revue hal-03952273v1
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition Marianna Španková,Štefan Chromik,Edmund Dobročka,Lenka Pribusová Slušná,Marcel Talackoet al. Nanomaterials, 2023, 13 (21), pp.2837. ⟨10.3390/nano13212837⟩ Article dans une revue hal-04791706v1
Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography Samba Ndiaye,Caroline Elias,Aissatou Diagne,Hélène Rotella,Frédéric Georgiet al. Applied Physics Letters, 2023, 123, pp.162102. ⟨10.1063/5.0167855⟩ Article dans une revue hal-04351608v1
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates Giuseppe Greco,Patrick Fiorenza,Emanuela Schilirò,Corrado Bongiorno,Salvatore Di Francoet al. Microelectronic Engineering, 2023, 276, pp.112009. ⟨10.1016/j.mee.2023.112009⟩ Article dans une revue hal-04092737v1
Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate Reda Elwaradi,Jash Mehta,Thi Huong Ngo,Maud Nemoz,Catherine Bougerolet al. Journal of Applied Physics, 2023, 133 (14), pp.145705. ⟨10.1063/5.0147048⟩ Article dans une revue hal-04086494v1
Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films R. Aristegui,P. Lefebvre,C. Brimont,T. Guillet,M. Vladimirovaet al. Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩ Article dans une revue hal-04251300v1
Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq,Yassine Fouzi,Ali Abboud,N. Defrance,Francois Vauretteet al. Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩ Article dans une revue hal-04084512v1
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples B. Orfao,G. Di Gioia,B. Vasallo,S. Pérez,J. Mateoset al. Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩ Article dans une revue hal-03741441v1
Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells R. Aristegui,F. Chiaruttini,B. Jouault,P. Lefebvre,C. Brimontet al. Physical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩ Article dans une revue hal-03759667v1
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Benjamin Damilanoet al. Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩ Article dans une revue hal-03467546v1
Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template Julien Bassaler,Rémi Comyn,Catherine Bougerol,Yvon Cordier,Farid Medjdoubet al. Journal of Applied Physics, 2022, 131 (12), pp.124501. ⟨10.1063/5.0077107⟩ Article dans une revue hal-03619060v1
A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells P. Quach,A. Jollivet,A. Babichev,N. Isac,M. Morassiet al. Applied Physics Letters, 2022, 120 (17), pp.171103. ⟨10.1063/5.0086641⟩ Article dans une revue hal-03823140v1
Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations Harpreet Kaur,Rajesh Sharma,T. Laurent,J. Torres,P. Nouvelet al. Applied physics. A, Materials science & processing, 2022, 128 (2), pp.144. ⟨10.1007/s00339-022-05284-8⟩ Article dans une revue hal-03547770v1
Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications Atse Julien Eric N’dohi,Camille Sonneville,Luong Viet Phung,Thi Huong Ngo,Philippe de Mierryet al. AIP Advances, 2022, 12 (2), pp.025126. ⟨10.1063/5.0082860⟩ Article dans une revue hal-03582833v1
Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs Gaudencio Paz-Martínez,Ignacio Íñiguez-De-La-Torre,Héctor Sánchez-Martín,José Antonio Novoa-López,Virginie Hoelet al. Sensors, 2022, 22 (4), pp.1515. ⟨10.3390/s22041515⟩ Article dans une revue hal-03582713v1
AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications Marie Lesecq,Eric Frayssinet,Marc Portail,Micka Bah,N. Defranceet al. Materials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩ Article dans une revue hal-03741438v1
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Maud Nemozet al. Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩ Article dans une revue hal-03741626v1
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes P. Vigneshwara Raja,Christophe Raynaud,Camille Sonneville,Atse Julien Eric N’dohi,Hervé Morelet al. Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩ Article dans une revue hal-03826217v1
New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor Flavien Cozette,Bilal Hassan,Christophe Rodriguez,Eric Frayssinet,Rémi Comynet al. Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩ Article dans une revue hal-03341284v1
Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology Florent Albany,François Lecourt,Ewa Walasiak,N. Defrance,Arnaud Curutchetet al. Microelectronics Reliability, 2021, 126, pp.114291. ⟨10.1016/j.microrel.2021.114291⟩ Article dans une revue hal-03539673v1
Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution Nedal Al Taradeh,Eric Frayssinet,Christophe Rodriguez,Frédéric Morancho,Camille Sonnevilleet al. Energies, 2021, 14 (14), pp.4241. ⟨10.3390/en14144241⟩ Article dans une revue hal-03452669v1
Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Benjamin Damilanoet al. Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩ Article dans une revue hal-03035072v1
AlGaN channel high electron mobility transistors with regrown ohmic contacts Idriss Abid,Jash Mehta,Yvon Cordier,Joff Derluyn,Stefan Degrooteet al. Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩ Article dans une revue hal-03164517v1
AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology Mahmoud Abou Daher,Marie Lesecq,Pascal Tilmant,N. Defrance,Michel Rousseauet al. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (3), pp.033201. ⟨10.1116/1.5143418⟩ Article dans une revue hal-02929037v1
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition F Giannazzo,R Dagher,E Schilirò,S Panasci,G Grecoet al. Nanotechnology, 2020, 32 (1), pp.015705. ⟨10.1088/1361-6528/abb72b⟩ Article dans une revue hal-03035077v1
French ichthyological records for 2018 Samuel P. Iglesias,P. Bergot,P. Breton,S. Brunelle,M. Camusatet al. Cybium : Revue Internationale d’Ichtyologie, 2020, 44 (4), pp.285-307. ⟨10.26028/cybium/2020-444-001⟩ Article dans une revue hal-03172125v1
Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters Thi Huong Ngo,Rémi Comyn,Eric Frayssinet,Hyonju Chauveau,Sébastien Chenotet al. Journal of Crystal Growth, 2020, 552, pp.125911. ⟨10.1016/j.jcrysgro.2020.125911⟩ Article dans une revue hal-03418915v1
Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies Micka Bah,Damien Valente,Marie Lesecq,N. Defrance,Maxime Garcia Barroset al. Scientific Reports, 2020, 10 (1), pp.14166. ⟨10.1038/s41598-020-71064-0⟩ Article dans une revue hal-02929022v1
Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses Eric Frayssinet,Luan Nguyen,Marie Lesecq,N. Defrance,Maxime Garcia Barroset al. Physica Status Solidi A (applications and materials science), 2020, 217 (7), pp.1900760. ⟨10.1002/pssa.201900760⟩ Article dans une revue hal-02929058v1
Kapitza thermal resistance characterization of epitaxial graphene–SiC(0001) interface Georges Hamaoui,Roy Dagher,Yvon Cordier,Adrien Michon,Sylvain Potironet al. Applied Physics Letters, 2019, 114 (22), pp.221601. ⟨10.1063/1.5092207⟩ Article dans une revue hal-03108345v1
Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Yvon Cordier,Rémi Comyn,Olivier Tottereau,Eric Frayssinet,Marc Portailet al. Journal of Crystal Growth, 2019, 507, pp.220-225. ⟨10.1016/j.jcrysgro.2018.11.029⟩ Article dans une revue istex hal-02399328v1
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates Idriss Abid,Riad Kabouche,Catherine Bougerol,Julien Pernot,Cédric Masanteet al. Micromachines, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩ Article dans une revue hal-02344992v1
2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz Mohamed-Reda Irekti,Marie Lesecq,N. Defrance,Etienne Okada,Eric Frayssinetet al. Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩ Article dans une revue hal-02929065v1
Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures François Chiaruttini,Thierry Guillet,Christelle Brimont,Benoit Jouault,Pierre Lefebvreet al. Nano Letters, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩ Article dans une revue hal-02272702v1
Terahertz intersubband absorption of GaN/ AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates A Jollivet,M Tchernycheva,V Trinité,E Frayssinet,P de Mierryet al. Applied Physics Letters, 2019, 115 (26), pp.261103. ⟨10.1063/1.5129362⟩ Article dans une revue hal-03023702v1
High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors Filippo Giannazzo,Giuseppe Greco,Emanuela Schilirò,Raffaella Lo Nigro,Ioannis Deretziset al. ACS Applied Electronic Materials, 2019, 1 (11), pp.2342-2354. ⟨10.1021/acsaelm.9b00530⟩ Article dans une revue hal-02929061v1
Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition Emanuela Schilirò,Filippo Giannazzo,Corrado Bongiorno,Salvatore Di Franco,Giuseppe Grecoet al. Materials Science in Semiconductor Processing, 2019, 97, pp.35-39. ⟨10.1016/j.mssp.2019.03.005⟩ Article dans une revue hal-02399341v1
Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon Yvon Cordier,Rémi Comyn,Éric Frayssinet,Mario Khoury,Marie Lesecqet al. Physica Status Solidi A (applications and materials science), 2018, 215 (9), pp.1700637. ⟨10.1002/pssa.201700637⟩ Article dans une revue hal-03576045v1
Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape B. Damilano,Marie Lesecq,Di Zhou,Éric Frayssinet,Sebastien Chenotet al. IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩ Article dans une revue hal-02304909v1
A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations Roy Dagher,Elisabeth Blanquet,Christian Chatillon,Timotée Journot,Marc Portailet al. CrystEngComm, 2018, 20 (26), pp.3702 - 3710. ⟨10.1039/c8ce00383a⟩ Article dans une revue hal-01871982v1
Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate Tasnia Hossain,Mohammad Junaebur Rashid,Eric Frayssinet,Nicolas Baron,Benjamin Damilanoet al. physica status solidi (b), 2018, 255 (5), pp.1700399. ⟨10.1002/pssb.201700399⟩ Article dans une revue hal-01871066v1
Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions Nolwenn Le Biavan,Maxime Hugues,Miguel Montes Bajo,Julen Tamayo-Arriola,A. Jollivetet al. Applied Physics Letters, 2017, 111 (23), pp.034022. ⟨10.1063/1.5003146⟩ Article dans une revue hal-05311087v1
Recent improvements of flexible GaN-based HEMT technology Sarra Mhedhbi,Marie Lesecq,Philippe Altuntas,N. Defrance,Yvon Cordieret al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), 1600484, 5 p. ⟨10.1002/pssa.201600484⟩ Article dans une revue hal-03270098v1
High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates R. Dagher,S. Matta,Romain Parret,Matthieu Paillet,Benoit Jouaultet al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), pp.1600436. ⟨10.1002/pssa.201600436⟩ Article dans une revue hal-01563258v1
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs Hector Sanchez-Martin,Oscar Garcia-Perez,Susana Pérez,Philippe Altuntas,Virginie Hoelet al. Semiconductor Science and Technology, 2017, 32 (3), 035011, 8 p. ⟨10.1088/1361-6641/aa5473⟩ Article dans une revue hal-03270095v1
A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate Guillaume Gomme,Gaël Gautier,Marc Portail,Eric Frayssinet,Daniel Alquieret al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), pp.1600450. ⟨10.1002/pssa.201600450⟩ Article dans une revue hal-02152388v1
CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut Roy Dagher,Benoit Jouault,Matthieu Paillet,Maxime Bayle,Luan Nguyenet al. Materials Science Forum, 2017, 897, pp.731 - 734. ⟨10.4028/www.scientific.net/MSF.897.731⟩ Article dans une revue hal-01643147v1
Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating H. Spisser,A. Grimault-Jacquin,N. Zerounian,A. Aassime,L. Caoet al. Journal of Infrared, Millimeter and Terahertz Waves, 2016, 37 (3), pp.243 - 257. ⟨10.1007/s10762-015-0224-y⟩ Article dans une revue hal-01918143v1
First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor Sarra Mhedhbi,Marie Lesecq,Philippe Altuntas,N. Defrance,Etienne Okadaet al. IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩ Article dans une revue hal-03270110v1
Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes Gema Tabares Jimenez,Sarra Mhedhbi,Marie Lesecq,Benjamin Damilano,Julien Braultet al. IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩ Article dans une revue hal-03270097v1
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Yvon Cordier,Benjamin Damilano,Phannara Aing,Catherine Chaix,Florence Linezet al. Journal of Crystal Growth, 2016, 433, pp.165-171. ⟨10.1016/j.jcrysgro.2015.10.017⟩ Article dans une revue istex hal-05311091v1
Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS Rémi Comyn,Yvon Cordier,Sébastien Chenot,Abdelatif Jaouad,Hassan Maheret al. Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.917 - 924. ⟨10.1002/pssa.201532732⟩ Article dans une revue istex hal-01918142v1
Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate Philippe Altuntas,François Lecourt,Adrien Cutivet,N. Defrance,Etienne Okadaet al. IEEE Electron Device Letters, 2015, 36 (4), pp.303-305. ⟨10.1109/LED.2015.2404358⟩ Article dans une revue hal-03276913v1
Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition A. Michon,Antoine Tiberj,S. Vezian,E. Roudon,D. Lefebvreet al. Applied Physics Letters, 2014, 104 (7), pp.071912. ⟨10.1063/1.4866285⟩ Article dans une revue hal-01200742v1
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Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process Elias Al Alam,Ignasi Cortés,T. Begou,Antoine Goullet,Frédéric Moranchoet al. Materials Science Forum, 2012, 711, pp.228-232. ⟨10.4028/www.scientific.net/MSF.711.228⟩ Article dans une revue hal-00864740v1
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Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111) Adrien Michon,Elodie Roudon,Marc Portail,Denis Lefebvre,Stephane Vézianet al. Materials Science Forum, 2012, 711 (1), pp.253-257. ⟨10.4028/www.scientific.net/MSF.711.253⟩ Article dans une revue hal-05311109v1
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AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz J.C. Gerbedoen,A. Soltani,S. Joblot,Jean-Claude de Jaeger,Christophe Gaquièreet al. IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩ Article dans une revue hal-00549455v1
Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111) Yvon Cordier,Aude Le Cotonnec,Sébastien Chenot,Nicolas Baron,Nacer Farihet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6 (S2), pp.S1016-S1019. ⟨10.1002/pssc.200880870⟩ Article dans une revue hal-00329478v1
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Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C Laure Bouguen,Sylvie Contreras,Benoit Jouault,Leszek Konczewicz,Jean Camasselet al. Applied Physics Letters, 2008, 92, pp.043504. ⟨10.1063/1.2838301⟩ Article dans une revue hal-00535633v1
Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT A. Soltani,A. Ben Moussa,S. Touati,Virginie Hoel,Jean-Claude de Jaegeret al. Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩ Article dans une revue istex hal-00267124v1
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High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures C Consejo,L Konczewicz,S Contreras,Benoit Jouault,S Lepkowskyet al. physica status solidi (b), 2003, 235 (2), pp.232-237. ⟨10.1002/pssb.200301562⟩ Article dans une revue istex hal-03037546v1
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Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs Yvon Cordier,P. Lorenzini,Jean Michel Chauveau,D. Ferré,Ydir Androussiet al. Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩ Article dans une revue istex hal-00018494v1
MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances Y. Cordier,F. Semond,P. Lorenzini,N. Grandjean,F. Nataliet al. Journal of Crystal Growth, 2003, 251, pp.811-815 Article dans une revue hal-00146661v1
Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate N. Vellas,Christophe Gaquière,A. Minko,Virginie Hoel,Jean-Claude de Jaegeret al. IEEE Microwave and Wireless Components Letters, 2003, 13, pp.255-257 Article dans une revue hal-00146662v1
High-power AlGaN/GaN HEMTs on resistive silicon substrate Virginie Hoel,N. Vellas,Christophe Gaquière,Jean-Claude de Jaeger,Y. Cordieret al. Electronics Letters, 2002, 38, pp.750-752 Article dans une revue hal-00149694v1
fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate S. Bollaert,Y. Cordier,M. Zaknoune,T. Parenty,H. Happyet al. Electronics Letters, 2002, 38, pp.389-391 Article dans une revue hal-00147831v1
HEMTs capability for millimeter wave applications S. Bollaert,Y. Cordier,M. Zaknoune,T. Parenty,H. Happyet al. Annals of Telecommunications - annales des télécommunications, 2001, 56, pp.15-26 Article dans une revue hal-00151764v1
Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement Mustafa Boudrissa,Elisabet Delos,Christophe Gaquière,Michel Rousseau,Yvon Cordieret al. IEEE Transactions on Electron Devices, 2001, 48 (6), pp.1037-1044. ⟨10.1109/16.925223⟩ Article dans une revue hal-00152595v1
0,1-µm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs M. Zaknoune,Y. Cordier,S. Bollaert,D. Ferre,D. Theronet al. Solid-State Electronics, 2000, 44 (9), pp.1685-1688. ⟨10.1016/S0038-1101(00)00060-5⟩ Article dans une revue istex hal-00158982v1
Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage Mustafa Boudrissa,Elisabet Delos,Yvon Cordier,Didier Theron,Jean-Claude de Jaeger IEEE Electron Device Letters, 2000, 21 (11), pp.512-514. ⟨10.1109/55.877193⟩ Article dans une revue hal-00158983v1
The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter S. Bollaert,Y. Cordier,M. Zaknoune,H. Happy,Virginie Hoelet al. Solid-State Electronics, 2000, 44, pp.1021-1027 Article dans une revue hal-00157879v1
Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps Y. Cordier,D. Ferre,J.M. Chauveau,J. Dipersio Applied Surface Science, 2000, 166, pp.442-445 Article dans une revue hal-00158436v1
Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers Y. Cordier,J.M. Chauveau,D. Ferre,J. Dipersio Journal of Vacuum Science and Technology, 2000, 18, pp.2513-2517 Article dans une revue hal-00158227v1

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AlGaN channel high electron mobility transistors on bulk AlN substrate Jash Mehta,Idriss Abid,Reda Elwaradi,Yvon Cordier,F Medjdoub International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany Communication dans un congrès hal-03829060v1
Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template Julien Bassaler,Rémi Comyn,C. Bougerol,Yvon Cordier,F Medjdoubet al. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal Communication dans un congrès hal-03681788v1
Electrical control of excitons in GaN/(Al,Ga)N quantum wells Rémi Aristegui,François Chiaruttini,Benoit Jouault,Christelle Brimont,Thierry Guilletet al. International Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany Communication dans un congrès hal-04874254v1
Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications Marie Lesecq,Éric Frayssinet,Marc Portail,Micka Bah,Nicolas Defranceet al. International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany Communication dans un congrès hal-04037282v1
Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate Reda Elwaradi,C. Bougerol,Jash Mehta,Maud Nemoz,F Medjdoubet al. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal Communication dans un congrès hal-03681811v1
[Invited] AlGaN Channel HEMTs for High Voltage Applications F Medjdoub,Jash Mehta,Idriss Abid,Yvon Cordier,Fabrice Semond MRS Spring Meeting & Exhibit, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States Communication dans un congrès hal-03637419v1
Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky Camille Sonneville,Atse Julien Eric N’dohi,S Saidi,T H Ngo,P. de Mierryet al. Conférence Internationale Matériaux, Oct 2022, Lille, France Communication dans un congrès hal-03844887v1
Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq,Y. Fouzi,A. Abboud,N. Defrance,Francois Vauretteet al. European Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland Communication dans un congrès hal-04039596v1
Electrical behavior of vertical Schottky diodes on GaN homoepitaxy M Dagher,Camille Sonneville,Georges Bremond,Dominique Planson,Yvon Cordieret al. IWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany Communication dans un congrès hal-03854620v1
AlGaN/GaN HEMTs on AlN substrate for power electronics Jash Mehta,Idriss Abid,Thi Huong Ngo,Yvon Cordier,F Medjdoub 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom Communication dans un congrès hal-03279160v1
AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications Marie Lesecq,E. Frayssinet,Marc Portail,M Bah,N. Defranceet al. 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France Communication dans un congrès hal-04038119v1
Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications Atse Julien Eric N’dohi,Camille Sonneville,Thi Huong Ngo,P. de Mierry,Éric Frayssinetet al. EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom Communication dans un congrès hal-03676503v1
GaN-based HEMTs operating as zero-bias microwave detectors at low temperature G. Paz,I. Iniguez de La Torre,H. Sanchez,Virginie Hoel,Y. Cordieret al. 13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Seville, Spain Communication dans un congrès hal-03340956v1
MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES Atse Julien Eric N’dohi,Camille Sonneville,Soufiane Saidi,Thi Huong Ngo,P. de Mierryet al. POWER 2021 (IMAPS), Nov 2021, Tours, France Communication dans un congrès hal-03676940v1
An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT F. Albany,A. Curutchet,N. Labat,F. Lecourt,E. Walasiaket al. 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362 Communication dans un congrès hal-03362260v1
Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy Micka Bah,Damien Valente,Marie Lesecq,N. Defrance,Maxime Garcia Barroset al. Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132 Communication dans un congrès hal-03284079v1
Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes Quentin Fornasiero,N. Defrance,Marie Lesecq,Eric Frayssinet,Yvon Cordieret al. Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52 Communication dans un congrès hal-03275589v1
GaN schottky diode on silicon substrate for high power THz multiplier Giuseppe Di Gioia,M Samnouni,H Bouillaud,P Mondal,J Treuttelet al. WOCSDICE 2021, Jun 2021, Bristol, United Kingdom Communication dans un congrès hal-03384345v1
Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs Chaymaa Haloui,Toulon Gaëtan,Josiane Tasselli,Yvon Cordier,Éric Frayssinetet al. 28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland Communication dans un congrès hal-02922723v1
Développement technologique d'un HEMT normally- off avec une grille à barrière P-GaN Chaymaa Haloui,Gaëtan Toulon,Josiane Tasselli,Yvon Cordier,Éric Frayssinetet al. SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France Communication dans un congrès hal-02918372v2
GaN Schottky Diode for High Power THz Generation using Multiplier Principle Giuseppe Di Gioia,V K Chinni,Malek Zegaoui,Y Cordier,A Maestriniet al. Proc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), Jun 2019, Cabourg, France Communication dans un congrès hal-03384353v1
Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps Thierry Guillet,François Chiaruttini,Christelle Brimont,Benoit Jouault,Pierre Lefebvreet al. 20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia Communication dans un congrès hal-04874180v1
Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate M.R. Irekti,Marie Lesecq,N. Defrance,M. Boucherta,Eric Frayssinetet al. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France Communication dans un congrès hal-04039402v1
Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures Maria Vladimirova,François Chiaruttini,Thierry Guillet,Christelle Brimont,Benoit Jouaultet al. 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States Communication dans un congrès hal-02466858v1
AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer Idriss Abid,Riad Kabouche,Malek Zegaoui,C. Bougerol,Rémi Comynet al. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France Communication dans un congrès hal-02356886v1
MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses Eric Frayssinet,Luan Nguyen,Marie Lesecq,N. Defrance,Maxime Garcia Barroset al. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France Communication dans un congrès hal-04038786v1
Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures Maria Vladimirova,François Chiaruttini,Thierry Guillet,Christelle Brimont,Pierre Lefebvreet al. 5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia Communication dans un congrès hal-02466887v1
[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors E. Frayssinet,L. Nguyen,Marie Lesecq,N. Defrance,R. Comynet al. 13th International Conference on Nitride Semiconductors (ICNS 2019), Jul 2019, Washington, Seattle, United States Communication dans un congrès hal-04039430v1
Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates Idriss Abid,Riad Kabouche,Malek Zegaoui,C. Bougerol,Rémi Comynet al. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle WA, United States Communication dans un congrès hal-03287398v1
Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits N. Defrance,Etienne Okada,Florent Albany,Nathalie Labat,Nathalie Malbertet al. WOCSDICE 2019, Jun 2019, Cabourg, France Communication dans un congrès hal-02502499v1
Phase transition of indirect excitons in GaN quantum wells. Thierry Guillet,François Chiaruttini,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan Communication dans un congrès hal-01910225v1
Analysis of microwave detection with GaN HEMTs under RF probes Hector Sanchez-Martin,Ester Pérez-Martín,Philippe Altuntas,Virginie Hoel,Stéphane Rennessonet al. Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2018, May 2018, Bucharest, Romania Communication dans un congrès hal-03340979v1
[Invited] Nouvelles voies technologiques pour la mesure de la température et l’amélioration de la dissipation thermique des HEMTs GaN M. Lesecq,Flavien Cozette,Mahmoud ABOU DAHER,Mohamed-Reda Irekti,M. Bouchertaet al. RF & Microwave 2018, 7ème Salon Radiofréquences, Hyperfréquences, Wireless, CEM et Fibre Optique, Mar 2018, Paris, France Communication dans un congrès hal-04441664v1
Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells. François Chiaruttini,Thierry Guillet,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France Communication dans un congrès hal-01907806v1
Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée Audrey Chapelle,Éric Frayssinet,Yvon Cordier,Yohann Spiegel,Leïla Benmosfetaet al. Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5 Communication dans un congrès hal-02981903v2
Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells. Thierry Guillet,François Chiaruttini,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico Communication dans un congrès hal-01908823v1
Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs Hector Sanchez-Martin,Oscar Garcia-Perez,Ignacio Íñiguez-De-La-Torre,Susana Perez,Tomás Gonzálezet al. 11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩ Communication dans un congrès hal-03270103v1
On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs Philippe Altuntas,N. Defrance,Marie Lesecq,Alain Agboton,Rezki Ouhachiet al. 9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩ Communication dans un congrès hal-03276914v1
THz emission from 2DEG GaN device A. Penot,J. Torres,P. Nouvel,L. Varani,F. Teppeet al. 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013, Matsue, Japan Communication dans un congrès hal-02454369v1
AlGaN/GaN heterostructures with very-thin buffer on Si (111) for NEMS applications : electrical and mechanical study P. Leclaire,Y. Cordier,Sébastien Chenot,D. Theron,M. Faucher 22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. 2 p Communication dans un congrès hal-00877763v1
AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD Philippe Altuntas,N. Defrance,Marie Lesecq,Adrien Cutivet,Alain Agbotonet al. 22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p Communication dans un congrès hal-00877773v1
Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz Stéphanie Rennesson,François Lecourt,N. Defrance,M. Chmielowska,S. Chenotet al. Joint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France Communication dans un congrès hal-00987957v1
[Invité] Etat de l'art et défis du GaN pour l'électronique Raphaël Aubry,Yvon Cordier,Jean-Claude de Jaeger,Nicolas Grandjean,M. Rocchiet al. 14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, Table ronde, 2013, Evian, France Communication dans un congrès hal-00878877v1
Experiments and theory of terahertz transmission through multi-layer semiconductor structures A. Penot,J. Torres,T. Laurent,R. Sharma,P. Nouvelet al. 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013, Matsue, Japan Communication dans un congrès hal-02454457v1
Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz Stéphanie Rennesson,M. Chmielowska,S. Chenot,Yvon Cordier,François Lecourtet al. 10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States Communication dans un congrès hal-00987956v1
STARGAN : études de structures avancées de la filière nitrure de gallium (GaN) François Lecourt,Yannick Douvry,Marie Lesecq,N. Defrance,Alain Agbotonet al. Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France Communication dans un congrès hal-00941541v1
Room temperature generation of THz radiation in GaN quantum wells structures A. Penot,J. Torres,P. Nouvel,L. Varani,F. Teppeet al. SPIE Photonic West, 2013, San Francisco, United States. pp.34-40, ⟨10.1117/12.2002504⟩ Communication dans un congrès hal-01926284v1
Epitaxial growth of AlN thin films at low temperature by magnetron sputtering technique Julien Camus,Quentin Simon,Keltouma Aït Aïssa,Salma Bensalem,Laurent Le Brizoualet al. European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J - Semiconductor nanostructures towards electronic and optoelectronic device applications IV, 2013, Strasbourg, France Communication dans un congrès hal-00878878v1
AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides Adrien Cutivet,Alain Agboton,Philippe Altuntas,François Lecourt,Marie Lesecqet al. 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38 Communication dans un congrès hal-00828412v1
Graphene based near-field thermophotovoltaic conversion system (Orale) Ali Belarouci,Adrien Michon,Yvon Cordier,Yannick de Wilde,Riccardo Messinaet al. Cmos energy technologies research, Jul 2013, Whistler, Canada Communication dans un congrès hal-00818643v1
GaN MEMS resonators : from demonstration to microsystem-compatible performances Marc Faucher,Achraf Ben Amar,Victor Y. Zhang,Yvon Cordier,Matthieu Werquinet al. 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4 Communication dans un congrès hal-00801104v1
Résonateurs MEMS en nitrure de gallium Marc Faucher,Didier Theron,Yvon Cordier,Fabrice Semond,Achraf Ben Amaret al. Journées Nationales du GDR Micro Nano Systèmes-Micro Nano Fluidique, 2012, Bordeaux, France Communication dans un congrès hal-00797721v1
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001) A. Michon,E. Roudon,M. Portail,Benoit Jouault,S. Contreraset al. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩ Communication dans un congrès hal-03037521v1
Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs F. Lecourt,N. Defrance,S. Rennesson,Virginie Hoel,Y. Cordieret al. 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2 Communication dans un congrès hal-00801154v1
THz transmission modulated by a dc-bias through GaN quantum well structure A. Penot,J. Torres,T. Laurent,R. Sharma,P. Nouvelet al. TERAHERTZ TECHNOLOGY AND APPLICATIONS V, Jan 2012, San Francisco, United States. pp.826111, ⟨10.1117/12.905958⟩ Communication dans un congrès hal-00814152v1
High transconductance on AlGaN/GaN HEMT on (110) silicon substrate J.C. Gerbedoen,A. Soltani,Y. Cordier,Jean-Claude de Jaeger 7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.413-416 Communication dans un congrès hal-00814978v1
[Invited] AlGaN/GaN and InAlN/GaN HEMTs technology for high frequency wireless communication and applications needing conformability Jean-Claude de Jaeger,Virginie Hoel,Marie Lesecq,N. Defrance,F. Lecourtet al. European Microwave Week, EuMIC, Workshop W09 - Wideband GaN devices and applications, 2011, Manchester, United Kingdom Communication dans un congrès hal-00807597v1
Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers Marc Faucher,Yvon Cordier,Fabrice Semond,Virginie Brandli,Bertrand Grimbertet al. 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩ Communication dans un congrès hal-00579046v1
Voltage Control of Terahertz Transmission Through GaN Quantum Wells: Experiments and Theory T. Laurent,R. Sharma,A. Penot,J. Torres,P. Nouvelet al. 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra and Stephen M. Goodnick, 2011, Santa Barbara, United States Communication dans un congrès hal-02455707v1
High RF performance of AlGaN/GaN HEMT on (110)-oriented silicon substrate J.C. Gerbedoen,A. Soltani,Y. Cordier,Jean-Claude de Jaeger 20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 Communication dans un congrès hal-00800113v1
Voltage-controlled sub-THz radiation transmission through GaN heterostructures R. Sharma,T. Laurent,A. Penot,J. Torres,P. Nouvelet al. 20th European Heterostructure Technology meeting (HeTech), 2011, Lille, France Communication dans un congrès hal-02455809v1
[Invité] Micro et nanorésonateurs électromécaniques radio-fréquences. Principes et applications Marc Faucher,Bernard Legrand,Benjamin Walter,Emmanuelle Algre,A. Ben-Amaret al. TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, papier 554, 1-6 Communication dans un congrès hal-00806730v1
AlGaN/GaN HEMTs reported on flexible substrate N. Defrance,Marie Lesecq,F. Lecourt,Virginie Hoel,Jean-Claude de Jaegeret al. 20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 Communication dans un congrès hal-00800114v1
Enhanced terahertz transmission of GaN quantum wells T. Laurent,R. Sharma,J. Torres,P. Nouvel,S. Blinet al. 35th International Conference on Infrared, Millimeter and THz Waves, 2010, Rome, Italy Communication dans un congrès hal-01904170v1
Resonant HEMT transducers and integrated MEMS resonators based on AlGaN/GaN/Si heterostructures Marc Faucher,Bertrand Grimbert,Virginie Brandli,Yvon Cordier,Matthieu Werquinet al. Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010, 2010, Newport Beach, CA, United States Communication dans un congrès hal-00808202v1
Experimental investigation of THz transmission in GaN two-dimensional electron gas T. Laurent,R. Sharma,J. Torres,P. Nouvel,S. Blinet al. 14th International Symposium on Ultrafast Phenomena in Semiconductors, 2010, Vilnius, Lithuania Communication dans un congrès hal-01904173v1
Caractérisation électrique et hyperfréquence d'épitaxie AlGaN/GaN sur substrat résistif Si(111) F. Lecourt,Y. Douvry,N. Defrance,Virginie Hoel,Y. Cordieret al. 13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, 2010, France. pp.CD-ROM, Session Matériaux 2, 1-4 Communication dans un congrès hal-00573207v1
Analysis of AlGaN/GaN epi-material on resistive Si(111) substrate for MMIC applications in millimeter wave range F. Lecourt,Y. Douvry,N. Defrance,Virginie Hoel,Y. Cordieret al. 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.33-36 Communication dans un congrès hal-00549995v1
AlGaN/GaN HEMTs reported on flexible polyimide substrate Marie Lesecq,Virginie Hoel,A. Lecavelier,E. Pichonat,Jean-Claude de Jaegeret al. 5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.9-12 Communication dans un congrès hal-00549997v1
High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors Laure Bouguen,Leszek Konczewicz,Sylvie Contreras,Benoit Jouault,Jean Camasselet al. 9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4 Communication dans un congrès hal-00536293v1
Regrowth of GaN quantum wells on GaN substrates for TeraHertz generation by amplification of transverse electromagnetic waves M. Chmielowska,S. Chenot,Y. Cordier,T. Laurent,P. Nouvelet al. 18th European Heterostructure Technology Workshop – HETECH, 2009, Günzburg / Ulm, Germany Communication dans un congrès hal-02455804v1
Analysis of the C-V characteristic in SiO2/GaN MOS capacitors I. Cortes,E. Al-Alam,Marie-Paule Besland,P. Regreny,Frédéric Moranchoet al. 7th Spanish Conference on Electron Devices, Feb 2009, Santiago de Compostela, Spain. pp.254 Communication dans un congrès hal-00475900v1
Amplification of nanoscale motion by piezoelectric transduction in GaN resonators M. Faucher,B. Grimbert,Y. Cordier,N. Baron,A. Wilket al. 18th European Workshop on Heterostructure Technology, HeTech 2009, 2009, Günzburg-Ulm, Germany Communication dans un congrès hal-00810577v1
Terahertz generation in GaN quantum wells by amplification of transverse electromagnetic waves T. Laurent,G. Sabatini,P. Nouvel,J. Torres,C. Palermoet al. European Workshop on Heterostructure Technology, 2008, Venice, Italy. pp.85--86 Communication dans un congrès hal-01904189v1
High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular beam epitaxy for microwave applications S. Joblot,Y. Cordier,F. Semond,P. Vennegues,Sébastien Chenotet al. Materials Research Society Spring Meeting, MRS Spring 2008, Symposium C : Advances in GaN, GaAs, SiC, and Related Alloys on Silicon Substrates, 2008, San Francisco, CA, United States Communication dans un congrès hal-00362029v1
Performance of unstuck gamma gate AlGaN/GaN HEMTs on (001) silicon substrate at 10 GHz J. Gerbedoen,A. Soltani,N. Defrance,Michel Rousseau,Christophe Gaquièreet al. 3rd European Microwave Integrated Circuits Conference, EuMIC 2008, 2008, Netherlands. pp.330-333, ⟨10.1109/EMICC.2008.4772296⟩ Communication dans un congrès hal-00362379v1
Le Nitrure de Gallium : un Matériau d'Avenir pour la Conception de Composants de Puissance Haute Tension et Haute Température Elias Al Alam,Alain Cazarré,Frédéric Morancho,Karine Isoird,Yvon Cordier MGE 2008 4ème Colloque Matériaux du Génie Electrique, May 2008, TOULOUSE, France. 4 p Communication dans un congrès hal-01002191v1
Passivation de matériaux et composants III-V par plasma ECR d'azote Nacer Farih,Marie-Paule Besland,Antoine Goullet,Mario El Kazzi,Philippe Regrenyet al. JNMO'08 : 12èmes Journées Nano Micro et Optoélectronique, Jun 2008, Saint-Pierre-d'Oléron, France Communication dans un congrès hal-00288425v1
Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111) Yvon Cordier,Aude Le Cotonnec,Sébastien Chenot,Nicolas Baron,Nacer Farihet al. International Workshop on Nitride Semiconductors, Oct 2008, Montreux, Switzerland Communication dans un congrès hal-00540445v1
Pressure characterization of AlGaN/GaN Hall sensors Leszek Konczewicz,Sylvie Contreras,L. Bouguen,Benoit Jouault,Jean Camasselet al. 13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil Communication dans un congrès hal-00401344v1
AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication S. Boulay,S. Touati,A. Sar,Virginie Hoel,Christophe Gaquièreet al. 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.96-99, ⟨10.1109/EMICC.2007.4412656⟩ Communication dans un congrès hal-00284403v1
Réalisation de grille nitrure de longueur inférieure à 100nm pour des applications haute fréquence de HEMTs AlGaN/GaN S. Boulay,Virginie Hoel,S. Touati,E. Delos,Christophe Gaquièreet al. 15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C1-1-4 Communication dans un congrès hal-00370327v1
Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence L. Bouguen,Sylvie Contreras,Benoit Jouault,L. Konczewicz,Y. Cordieret al. Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France Communication dans un congrès hal-00394196v1
Conception et réalisation de transistors de type FP-HEMT AlGaN/GaN J.C. Gerbedoen,A. Soltani,Michel Rousseau,N. Defrance,Y. Cordieret al. 15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D10-1-4 Communication dans un congrès hal-00370331v1
High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications Christophe Consejo,Sylvie Contreras,Leszek Konczewicz,P. Lorenzini,Y. Cordieret al. 7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443 Communication dans un congrès hal-00543735v1
MicroRaman analysis of resistance ohmic contact to n-AlGaN/GaN A. Soltani,S. Touati,Virginie Hoel,Jean-Claude de Jaeger,J. Laureynset al. Proceedings of the 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Diamond 2005, 2005, Toulouse, France Communication dans un congrès hal-00131350v1
Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers Jean-Claude de Jaeger,S.L. Delage,Gilles Dambrine,M.A. Poisson,Virginie Hoelet al. 2005, pp.229-232 Communication dans un congrès hal-00126458v1
Low frequency noise behaviour in GaN HEMT's on silicon substrate Laurent Bary,E. Angeli,Abdelali Rennane,Geoffroy Soubercaze-Pun,Jean-Guy Tartarinet al. 2004, pp.286-295 Communication dans un congrès hal-00141967v1
Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité M. Werquin,D. Ducatteau,N. Vellas,D. Jambon,D. Theronet al. GDR Grand Gap, 2004, Fréjus, France Communication dans un congrès hal-00141965v1
Microwave performances of gallium nitride based HEMT's devices Christophe Gaquière,N. Vellas,M. Werquin,D. Ducatteau,E. Deloset al. European Microwave Week, 2004, Amsterdam, Netherlands Communication dans un congrès hal-00141962v1
RF noise and power performances of AlGaN/GaN on Si(111) substrates A. Minko,Virginie Hoel,Gilles Dambrine,Christophe Gaquière,Jean-Claude de Jaegeret al. 2004, pp.67-70 Communication dans un congrès hal-00142303v1
Amélioration des performances des HEMTs AlGaN/GaN sur substrat Si A. Minko,Virginie Hoel,Christophe Gaquière,D. Theron,Jean-Claude de Jaegeret al. GDR Grand Gap, 2004, Fréjus, France Communication dans un congrès hal-00141966v1
Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement Jean-Claude Jacquet,Raphaël Aubry,H. Gerard,E. Delos,Nathalie Rollandet al. 12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238 Communication dans un congrès hal-00142308v1
Optimisation des performances statiques des HEMTs AlGaN/GaN par traitement plasma S. Touati,Virginie Hoel,A. Minko,A. Soltani,Jean-Claude de Jaegeret al. GDR Grand Gap, 2003, Nice, France Communication dans un congrès hal-00146718v1
Thermal characterisation of AlGaN/GaN HEMTs using micro-Raman scatering spectroscopy and pulsed I-V measurements Raphaël Aubry,Jean-Claude Jacquet,Charu Dua,H. Gerard,B. Dessertenneet al. International Conference on Silicon Carbide and Related Materials; ICSCRM2003, Oct 2003, Lyon, France. pp.1625-1628 Communication dans un congrès hal-00146669v1
HEMT métamorphique pour applications de puissance en bande V : influence de la couche de barrière B. Bonte,M. Ardouin,M. Zaknoune,D. Theron,Y. Cordieret al. 2003, pp.4A2-2 Communication dans un congrès hal-00146696v1
Management thermique des transistors HEMT AlGaN/GaN Raphaël Aubry,N. Caillas,C. Dua,H. Gerard,B. Desserteneet al. GDR Grand Gap, 2003, Nice, France Communication dans un congrès hal-00146694v1
Optimisation des performances du transistor HEMT AlGaN/GaN sur substrat Si A. Minko,Virginie Hoel,D. Theron,Jean-Claude de Jaeger,Y. Cordieret al. GDR Grand Gap, 2003, Nice, France Communication dans un congrès hal-00146717v1
Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs Yvon Cordier,P. Lorenzini,Jean Michel Chauveau,D. Ferré,Ydir Androussiet al. International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩ Communication dans un congrès hal-00146110v1
Optimisation des HEMTs AlGaN/GaN/Si A. Minko,Virginie Hoel,Jean-Claude de Jaeger,Y. Cordier,F. Semondet al. 2003, pp.1D-12 Communication dans un congrès hal-00146697v1
High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures Christophe Consejo,Leszek Konczewicz,Sylvie Contreras,Benoit Jouault,S. Lepkowskyet al. 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), Aug 2002, GUILDFORD (ENGLAND), France. pp.232-237 Communication dans un congrès hal-00544457v1
Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs E. Lefebvre,M. Zaknoune,Y. Cordier,F. Mollot 2003, pp.409-412 Communication dans un congrès hal-00162725v1
Influence de la température sur les caractéristiques pulsées statiques et hyperfréquences des HEMTs AlGaN/GaN sur substrat silicium résistif (111) M. Werquin,Christophe Gaquière,N. Vellas,E. Delos,D. Ducatteauet al. 2003, pp.1D-13 Communication dans un congrès hal-00146691v1
Large signal behaviour of gallium nitride based HEMT's devices Christophe Gaquière,Raphaël Aubry,Yannick Guhel,A. Minko,Nicolas Vellaset al. 25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chermogolovska, Russia Communication dans un congrès hal-00149730v1
La filière GaN pour les applications hyperfréquences Christophe Gaquière,Raphaël Aubry,Yannick Guhel,A. Minko,Nicolas Vellaset al. 9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aygulf, France Communication dans un congrès hal-00149734v1
AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances Y. Cordier,F. Semond,P. Lorenzini,N. Grandjean,F. Nataliet al. 2002, pp.61-64 Communication dans un congrès hal-00149701v1
AlGaN/GaN HEMT for RF power applications Jean-Claude de Jaeger,Z. Bougria,S. Cassette,E. Chartier,Y. Cordieret al. 10th European Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2002, 2002, Milano, Italy Communication dans un congrès hal-00149736v1
Etude des contacts ohmiques et Schottky sur nitrure de gallium pour composants à effets de champ Christophe Gaquière,Raphaël Aubry,Yannick Guhel,A. Minko,Nicolas Vellaset al. GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France Communication dans un congrès hal-00149717v1
MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances Y. Cordier,F. Semond,P. Lorenzini,N. Grandjean,F. Nataliet al. 2002, pp.99-100 Communication dans un congrès hal-00149696v1
Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz M. Ardouin,B. Bonte,M. Zaknoune,D. Theron,Y. Cordieret al. 2002, pp.165-168 Communication dans un congrès hal-00149697v1
Caractérisation de transistors à effet de champ à base de GaN Christophe Gaquière,Raphaël Aubry,Yannick Guhel,A. Minko,Nicolas Vellaset al. 3ème Ecole Thématique CNRS : Matériaux Nitrures d'Eléments III, 2002, La Plagne, France Communication dans un congrès hal-00149714v1
Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 &lt; x &lt; 0.52) buffer layers D. Vignaud,Y. Cordier,P. Miska,D. Ferré 28th International Symposium on Compound Semiconductors, 2002, Japan. pp.537-542 Communication dans un congrès hal-00250216v1
Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology M. Ardouin,B. Bonte,M. Zaknoune,Y. Cordier,S. Bollaertet al. 25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia Communication dans un congrès hal-00149713v1
Luminescence de boites InAs obtenues par épitaxie par jets moléculaires sur des couches tampons métamorphiques InxAl1-xAs (0.33 = x = 0.52) D. Vignaud,Y. Cordier,P. Miska,D. Ferre Journée thématique Boites quantiques pour les télécommunications optiques, 2002, Rennes, France Communication dans un congrès hal-00148672v1
Performance à 60 GHz de HEMTs métamorphiques sur GaAs utilisant une technologie à double recess M. Zaknoune,M. Ardouin,B. Bonte,Y. Cordier,S. Bollaertet al. 9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aigulf, France Communication dans un congrès hal-00149738v1
0.06µm gate length metamorphic InAlAS/InGaAs HEMTs on GaAs with ft and fmax S. Bollaert,Y. Cordier,M. Zaknoune,T. Parenty,H. Happyet al. 2001, pp.192-195 Communication dans un congrès hal-00151759v1
HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range D. Theron,Y. Cordier,X. Wallart,S. Bollaert,M. Zaknouneet al. 2001, pp.53-56 Communication dans un congrès hal-00152625v1
High performance AlGaN/GaN HEMTs on a resistive silicon substrate Virginie Hoel,Y. Guhel,N. Vellas,Christophe Gaquière,Jean-Claude de Jaegeret al. 11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy Communication dans un congrès hal-00152670v1
Propriétés de nanostructures InAs réalisées par épitaxie par jets moléculaires sur des couches tampons AlInAs et GaInAs désadaptées sur substrat GaAs Y. Cordier,P. Miska,D. Vignaud,D. Ferre 8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France Communication dans un congrès hal-00152090v1
Les structures métamorphiques AlInAs/GaInAs sur substrat GaAs : croissance et applications Yvon Cordier,Mohammed Zaknoune,S. Bollaert,Mustafa Boudrissa,E. Lefebvreet al. 20ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2001, 2001, St Aygulf, France Communication dans un congrès hal-00152677v1
Les matériaux métamorphiques : une voie pour l'intégration de composants pour applications millimétriques sur substrat d'arséniure de gallium Y. Cordier,A. Cappy,M. Zaknoune,S. Bollaert Journée Thématique sur l'Electronique Intégrée, 2000, Arcueil, France Communication dans un congrès hal-00158447v1
MBE growth of InAs dots on InAlAs and InGaAs buffers lattice mismatched on GaAs Y. Cordier,P. Miska,D. Ferre Proceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI, 2000, Beijing, China Communication dans un congrès hal-00158218v1
Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate Mustafa Boudrissa,Elisabet Delos,Yvon Cordier,Didier Theron,Jean-Claude de Jaeger The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8 Communication dans un congrès hal-00159007v1
Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate Mustafa Boudrissa,Elisabet Delos,Yvon Cordier,Didier Theron,Jean-Claude de Jaeger 30th European Microwave Conferences, 2000, Paris, France. pp.90-93 Communication dans un congrès hal-00159006v1
Croissance EJM d'îlots InAs sur des tampons AIInAs et GaInAs désadaptés sur GaAs Y. Cordier,P. Miska,D. Ferre 13ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2000, 2000, Saint Aygulf, France Communication dans un congrès hal-00158439v1
InAs dots grown by MBE on InAIAs and InGaAs lattice mismatched buffers on GaAs Y. Cordier,D. Ferre,P. Miska Proceedings of the 42nd Electronic Materials Conference, Jun 2000, Denver, CO, United States Communication dans un congrès hal-00158219v1
Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate N. Cavassilas,F. Aniel,A. Nojeh,R. Adde,M. Zaknouneet al. 2000, 10 pp Communication dans un congrès hal-00159003v1
Charge control and electron transport properties in InyAl1-yAs/InxGa1-xAs metamorphic HEMTs : effect of indium content Y. Cordier,M. Zaknoune,S. Bollaert,A. Cappy 2000, pp.102-105 Communication dans un congrès hal-00158437v1
Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content Y. Cordier,M. Zaknoune,S. Bollaert,A. Cappy 2000, pp.102-105 Communication dans un congrès hal-00159005v1
HEMT structures on GaAs or InP substrates for millimeter wave power amplification Didier Theron,Yvon Cordier,X. Wallart,S. Bollaert,Mohammed Zaknouneet al. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece Communication dans un congrès hal-00159030v1
Les hétérostructures AlInAs/GaInAs/GaAs métamorphiques : étude de la relaxation J.M. Chauveau,I. Androussi,D. Ferre,J. Dipersio,Y. Cordier 7èmes Journées de la Matière Condensée, 2000, Poitiers, France Communication dans un congrès hal-00158438v1
Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMTs : effect of indium content Y. Cordier,M. Zaknoune,S. Bollaert,A. Cappy 2000, pp.102-105 Communication dans un congrès hal-00157883v1

Poster de conférence (4)

Deep-Level Transient Spectroscopy evaluation of epilayers grown on bulk GaN substrates for vertical devices Pedro Fernandes Paes Pinto Rocha,Kevin Nadaud,Giuseppe Greco,Taoufik Slimani Tlemcani,Michal Bockowskiet al. 15th International Conference on Nitride Semiconductors (ICNS-15), Jul 2025, Malmö, Sweden Poster de conférence hal-05234860v1
Carrier density analysis in stressed n-doped GaN on sapphire layers Ndembi Ignoumba-Ignoumba,Camille Sonneville,Éric Frayssinet,Adrien Bidaud,Florian Bartoliet al. GaN Marathon 2024, Jun 2024, Verona, Italy. 2024 Poster de conférence hal-05054677v1
Tuning GaN/AlGaN quantum well emission by deposition of Few-Layer Graphene and Nickel/Gold films Christelle Brimont,Rémi Aristegui,Pierre Lefebvre,Thierry Guillet,Maria Vladimirovaet al. ICNS -14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan. Poster de conférence hal-04793643v1
Conception et réalisation technologique de structures HEMTs AlGaN/GaN normally-off à grille P-GaN Daniel Rouly,Josiane Tasselli,Patrick Austin,Karine Isoird,Frédéric Moranchoet al. JEP 2022: Journées des Electroniques de Puissance, Mar 2022, Grenoble, France Poster de conférence hal-03621863v1

Chapitre d'ouvrage (3)

Molecular Beam Epitaxy of AlGaN/GaN High Electron Mobility Transistor Heterostructures for High Power and High-Frequency Applications Yvon Cordier,Rémi Comyn,Éric Frayssinet Sumeet Walia. Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing, CRC Press, 2018, 9780429503634. ⟨10.1201/9780429503634-9⟩ Chapitre d'ouvrage hal-05543300v1
Metamorphic InAIAs/InGaAs HEMTs : material properties and device performance Y. Cordier,S. Bollaert,M. Zaknoune,J.M. Chauveau,A. Cappy CAI W.Z. III-V semiconductor heterostructures : physics and devices, Research Signpost, Kerala, India, pp.111-138, 2003 Chapitre d'ouvrage hal-00132383v1
HEMT's capability for millimeter-wave applications S. Bollaert,Y. Cordier,M. Zaknoune,T. Parenty,H. Happyet al. NEY M. Millimeter waves in communication systems, Hermès, pp.15-26, 2001 Chapitre d'ouvrage hal-00132930v1

HDR (1)

Elaboration d'hétérostructures (Al,Ga)N/GaN en vue d'applications électroniques : de la croissance cristalline au composant. Yvon Cordier Matière Condensée [cond-mat]. Université Nice Sophia Antipolis, 2007 HDR tel-00588722v1